2SB435 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SB435

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 25

Maximum collector-base voltage |Ucb|, V: 45

Maximum collector-emitter voltage |Uce|, V: 35

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 3

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 1

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of 2SB435 transistor: TO220

2SB435 Equivalent Transistors - Cross-Reference Search

2SB435 PDF document for downloads:

1.1. 2sb435.pdf Size:69K _wingshing

2SB435 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SD235 ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -40 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25? PC 25 W ? ? ? Junction Temperature Tj 150 ? ? ? ? Storage Temperature Tstg -50~150 ? ELECTRICAL CHARACTERISTICS (TA=25? ?) ? ? Characteristic Symbol Test Condition Min Typ Max Unit Collector Cutoff Current ICBO VCB= -50V , IE=0 -10 µA Emitter Cutoff Current IEBO VEB= -5V , IC=0 10 µA DC Current Gain hFE1 VCE= -5V , IC=-0.5A 40 240 Collector- Emitter Saturation Voltage VCE(sat) IC=-3A , IB=-0.3A -1.0 V Current Gain Bandwidth Product fT VCE= -2V , IC=-0.5A 18 MHZ Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153 Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com

5.1. 2sb434.pdf Size:123K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB434 DESCRIPTION ·With TO-220 package ·Complement to type 2SD234 APPLICATIONS ·For low frequency power amplifier and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -3 A 1.5 PC Collector power dissipation W TC=25? 25 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? ????? INCHANGE SEMICONDUCTOR Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB434 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown

See also transistors datasheet: 2SB432 , 2SB433 , 2SB433F , 2SB434 , 2SB434-G , 2SB434-O , 2SB434-R , 2SB434-Y , BC148 , 2SB435-G , 2SB435-O , 2SB435-R , 2SB435-Y , 2SB436 , 2SB437 , 2SB438 , 2SB439 .

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