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2SB557
  2SB557
  2SB557
 
2SB557
  2SB557
  2SB557
 
2SB557
  2SB557
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU214
BU215 .. BUF410AI
BUF410FI .. BUS22BF
BUS22C .. BUW81A
BUW84 .. BUY83
BUY84 .. CD9013J
CD9014 .. CIL157
CIL157A .. CL166A
CL166B .. CPS2540B
CPS2545B .. CSA968
CSA968A .. CSC2688BPL
CSC2688G .. CTP1108
CTP1109 .. D29J6
D29J7 .. D42CU5
D42CU6 .. D64VP4
D64VP5 .. DT400-300
DT400-400 .. DTC015EM
DTC015EUB .. DTL3501
DTL3502 .. ECG2332
ECG2334 .. ED1602C
ED1602D .. ET206
ET359 .. FE4021
FE4022 .. FMG12
FMG13 .. FPC644
FPC828 .. FXT555SM
FXT557 .. GE55821
GE56551 .. GET3
GET3013 .. GSDS50018
GSDS50020 .. GT43
GT44 .. HEPS5006
HEPS5011 .. HSE163
HSE164 .. IR2002
IR2500 .. K2112A
K2112B .. KRA225
KRA225M .. KRC122
KRC122M .. KRC886T
KRX101E .. KSB811
KSB811-G .. KSC5024
KSC5024-O .. KSE200
KSE210 .. KT216B
KT216V .. KT357A
KT357B .. KT661A
KT662A .. KT818AM
KT818B .. KT928A
KT928B .. KTC3198L
KTC3199 .. KU601
KU602 .. MD2218F
MD2219 .. MJ15023
MJ15024 .. MJE13007F
MJE13007M .. MJH11020
MJH11021 .. MMBT2219A
MMBT2221 .. MMBTA92W
MMBTA93 .. MP1558
MP1558A .. MP8212
MP8213 .. MPS4121
MPS4122 .. MQ2218A
MQ2219 .. MT3S20TU
MT3S21P .. NA22FY
NA22H .. NB022EL
NB022ET .. NB221F
NB221FG .. NKT275
NKT275J .. NR431HG
NR431HR .. NTE256
NTE2560 .. P30
P302 .. PDTA123JM
PDTA123JT .. PMD20K120
PMD20K150 .. PTB20082
PTB20091 .. RCA9202A
RCA9202B .. RN1913FS
RN1961 .. RN2967
RN2967CT .. S8550T
S876T .. SF115C
SF115D .. SMBT3904
SMBT3904PN .. SRC1210UF
SRC1211 .. STN2222A
STN2222AS .. T1497
T1501 .. TD162/1
TD162A .. TIP34F
TIP35 .. TIX888
TIX890 .. TN6707A
TN6714A .. TRF5174
TRF641 .. UN211E
UN211F .. UPT614
UPT615 .. ZTX109BL
ZTX109BM .. ZTX618
ZTX649 .. ZXTPS720MC
 
2SB557 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SB557 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SB557

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 80

Maximum collector-base voltage |Ucb|, V: 120

Maximum collector-emitter voltage |Uce|, V: 120

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 8

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 4

Collector capacitance (Cc), pF: 500

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of 2SB557 transistor: TO3

2SB557 Equivalent Transistors - Cross-Reference Search

2SB557 PDF doc:

1.1. 2sb557.pdf Size:153K _jmnic

2SB557
2SB557
JMnic Product Specification Silicon PNP Power Transistors 2SB557 DESCRIPTION ·With TO-3 package ·Complement to type 2SD427 ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for 50W high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -8 A IE Emitter current 8 A PC Collector power dissipation TC=25? 80 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB557 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown v

1.2. 2sb557.pdf Size:121K _inchange_semiconductor

2SB557
2SB557
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB557 DESCRIPTION ·With TO-3 package ·Complement to type 2SD427 ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for 50W high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -8 A IE Emitter current 8 A PC Collector power dissipation TC=25? 80 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? ????? INCHANGE SEMICONDUCTOR Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB557 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CON

5.1. 2sb554.pdf Size:66K _no

2SB557
2SB557

5.2. 2sb554.pdf Size:144K _jmnic

2SB557
2SB557
JMnic Product Specification Silicon PNP Power Transistors 2SB554 DESCRIPTION ·With TO-3 package ·Complement to type 2SD424 ·High power dissipation APPLICATIONS ·For use in power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -180 V VCEO Collector-emitter voltage Open base -180 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -15 A IB Base current -4 A PC Collector power dissipation TC=25? 150 W Tj Junction temperature 150 ? Tstg Storage temperature -55~200 ? JMnic Product Specification Silicon PNP Power Transistors 2SB554 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -180 V VCEsat Collector-emitter saturation vo

5.3. 2sb555.pdf Size:149K _jmnic

2SB557
2SB557
JMnic Product Specification Silicon PNP Power Transistors 2SB555 2SB556 DESCRIPTION ·With TO-3 package ·Complement to type 2SD425/426 ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SB555 -140 VCBO Collector-base voltage Open emitter V 2SB556 -120 2SB555 -140 VCEO Collector-emitter voltage Open base V 2SB556 -120 VEBO Emitter-base voltage Open collector -5 V IC Collector current -12 A IE Emitter current 12 A PC Collector power dissipation TC=25? 100 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB555 2SB556 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAME

5.4. 2sb552.pdf Size:144K _jmnic

2SB557
2SB557
JMnic Product Specification Silicon PNP Power Transistors 2SB552 DESCRIPTION ·With TO-3 package ·Complement to type 2SD552 APPLICATIONS ·Power amplifier applications ·Power switching applications ·DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -220 V VCEO Collector-emitter voltage Open base -180 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -15 A IB Base current -4 A PC Collector power dissipation TC=25? 150 W Tj Junction temperature 150 ? Tstg Storage temperature -55~200 ? JMnic Product Specification Silicon PNP Power Transistors 2SB552 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -180 V VCEsat Collector-emitt

5.5. 2sb553.pdf Size:207K _jmnic

2SB557
2SB557
JMnic Product Specification Silicon PNP Power Transistors 2SB553 DESCRIPTION · ·With TO-220C package ·Complement to type 2SD553 ·Low collector saturation voltage APPLICATIONS ·High current switching applications ·Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -70 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -7 A Ta=25? 1.5 PC Collector dissipation W TC=25? 40 Tj Junction temperature 150 ? Tstg Storage temperature -50~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB553 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-

5.6. 2sb550.pdf Size:180K _inchange_semiconductor

2SB557
2SB557
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB550 DESCRIPTION ·With TO-66 package ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplification ·For low speed and power switching PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -70 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -5 A PC Collector power dissipation TC=25? 25 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB550 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -100 V V(BR)CEO Collec

5.7. 2sb554.pdf Size:113K _inchange_semiconductor

2SB557
2SB557
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB554 DESCRIPTION ·With TO-3 package ·Complement to type 2SD424 ·High power dissipation APPLICATIONS ·For use in power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -180 V VCEO Collector-emitter voltage Open base -180 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -15 A IB Base current -4 A PC Collector power dissipation TC=25? 150 W Tj Junction temperature 150 ? Tstg Storage temperature -55~200 ? ????? INCHANGE SEMICONDUCTOR Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB554 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown volt

5.8. 2sb558.pdf Size:206K _inchange_semiconductor

2SB557
2SB557
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SB558 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High Power Dissipation- : PC= 60W(Max)@TC=25? ·Complement to Type 2SD428 APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 40W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IE Emitter Current-Continuous 7 A Collector Power Dissipation PC @TC=25? 60 W TJ Junction Temperature 150 ? Storage Temperature -65~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SB558 ELECTRICAL CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MI

5.9. 2sb551.pdf Size:287K _inchange_semiconductor

2SB557
2SB557
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SB551 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.2V(Typ.)@IC= -2A ·High Power Dissipation- : PC= 25W(Max)@TC=55? APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous -3 A Collector Power Dissipation PC @TC= 25? 25 W TJ Junction Temperature 150 ? Storage Temperature -45~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SB551 ELECTRICAL CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; RBE= ? -50 V V(BR)CBO Collector-Base Breakdown Voltage

5.10. 2sb552.pdf Size:128K _inchange_semiconductor

2SB557
2SB557
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB552 DESCRIPTION ·With TO-3 package ·Complement to type 2SD552 APPLICATIONS ·Power amplifier applications ·Power switching applications ·DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -220 V VCEO Collector-emitter voltage Open base -180 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -15 A IB Base current -4 A PC Collector power dissipation TC=25? 150 W Tj Junction temperature 150 ? Tstg Storage temperature -55~200 ? Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB552 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;I

5.11. 2sb553.pdf Size:169K _inchange_semiconductor

2SB557
2SB557
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB553 DESCRIPTION · ·With TO-220C package ·Complement to type 2SD553 ·Low collector saturation voltage APPLICATIONS ·High current switching applications ·Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -70 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -7 A Ta=25? 1.5 PC Collector dissipation W TC=25? 40 Tj Junction temperature 150 ? Tstg Storage temperature -50~150 ? ????? INCHANGE SEMICONDUCTOR Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB553 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN

5.12. 2sb555_2sb556.pdf Size:116K _inchange_semiconductor

2SB557
2SB557
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB555 2SB556 DESCRIPTION ·With TO-3 package ·Complement to type 2SD425/426 ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SB555 -140 VCBO Collector-base voltage Open emitter V 2SB556 -120 2SB555 -140 VCEO Collector-emitter voltage Open base V 2SB556 -120 VEBO Emitter-base voltage Open collector -5 V IC Collector current -12 A IE Emitter current 12 A PC Collector power dissipation TC=25? 100 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? ????? INCHANGE SEMICONDUCTOR Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB555 2SB556 CH

See also transistors datasheet: 2SB551H , 2SB552 , 2SB553 , 2SB553-O , 2SB553-Y , 2SB554 , 2SB555 , 2SB556 , 2SC5200 , 2SB557S , 2SB558 , 2SB559 , 2SB559D , 2SB559E , 2SB559F , 2SB56 , 2SB560 .

Keywords

 2SB557 Datasheet  2SB557 Datenblatt  2SB557 RoHS  2SB557 Distributor
 2SB557 Application Notes  2SB557 Component  2SB557 Circuit  2SB557 Schematic
 2SB557 Equivalent  2SB557 Cross Reference  2SB557 Data Sheet  2SB557 Fiche Technique

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