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2SB557
  2SB557
  2SB557
  2SB557
 
2SB557
  2SB557
  2SB557
  2SB557
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC536SP
2SC537 .. 2SC5819
2SC582 .. 2SC690M
2SC691 .. 2SC90
2SC900 .. 2SD1065S
2SD1066 .. 2SD1257A
2SD1258 .. 2SD1446
2SD1447 .. 2SD1667
2SD1667Q .. 2SD1854
2SD1855 .. 2SD21
2SD2100 .. 2SD2449
2SD2453 .. 2SD365A
2SD366 .. 2SD594
2SD596 .. 2SD794-O
2SD794-R .. 2STF1550
2STF2220 .. 40261
40262 .. 40837
40850 .. A747A
A747B .. ACY23
ACY23V .. AF170
AF171 .. ASY85
ASY86 .. BC158C
BC158V .. BC250
BC250A .. BC340-6
BC341 .. BC487
BC487-18 .. BC817-16
BC817-16L .. BC860
BC860A .. BCW14
BCW14K .. BCW98B
BCW98C .. BCY72QF
BCY76 .. BD233
BD233-10 .. BD371D-6
BD372 .. BD618
BD619 .. BD952F
BD953 .. BDW24
BDW24A .. BDY12-10
BDY12-16 .. BF241C
BF241D .. BF432
BF432L .. BF870EA
BF870S .. BFQ38S
BFQ39 .. BFS505
BFS51 .. BFV97N
BFV98 .. BFY86A
BFY86B .. BLY17
BLY17A .. BSS82BL
BSS82C .. BSX61
BSX62 .. BTB9435L3
BTC1510E3 .. BU209A
BU210 .. BUF405AFI
BUF405AFP .. BUS21C
BUS21D .. BUW74
BUW75 .. BUY78
BUY79 .. CD9012GHI
CD9012J .. CIL148B
CIL148C .. CL155B
CL155C .. CPS1545B
CPS1550B .. CSA952M
CSA952M9AW .. CSC2611
CSC2655 .. CTP1033
CTP1034 .. D29J10
D29J2 .. D42CU11
D42CU12 .. D64TS5
D64VE3 .. DT34-300
DT34-400 .. DTC014EUB
DTC014YEB .. DTL3425
DTL3426 .. ECG2327
ECG2328 .. ED1601D
ED1601E .. ET1550
ET1551 .. FE4016
FE4017 .. FMC4A
FMC5A .. FPC1317
FPC1318 .. FXT551
FXT551SM .. GE10022
GE10023 .. GET2484
GET2904 .. GSDR10025I
GSDR15020 .. GT405B
GT405G .. HEPS3021
HEPS3024 .. HSE125
HSE127 .. IMT1A
IMT2A .. K2105
K2105A .. KRA122S
KRA152F .. KRC114
KRC114M .. KRC864F
KRC864U .. KSB744A-O
KSB744A-R .. KSC3953
KSC3953C .. KSD986
KSD986-O .. KT209L
KT209M .. KT343B
KT343V .. KT640B-2
KT640V-2 .. KT817A9
KT817B .. KT9144A9
KT9145A9 .. KTC2983D
KTC2983L .. KTX215U
KTX216U .. MD1128
MD1129 .. MJ13332
MJ13333 .. MJE13003-P
MJE13003B .. MJF16206
MJF16210 .. MMBR941BLT3
MMBR941LT1 .. MMBTA43LT1
MMBTA44 .. MP1547
MP1547A .. MP601
MP601A .. MPS3710
MPS3711 .. MPSW3725
MPSW42 .. MT0492
MT0493 .. NA21YX
NA21YY .. NB021FJ
NB021FK .. NB213XY
NB213Y .. NKT224
NKT225 .. NR421FE
NR421FF .. NTE2426
NTE2427 .. P213A
P213B .. PDTA113ZE
PDTA113ZM .. PMD13K40
PMD13K60 .. PT902
PT902-1 .. RCA6341
RCA8203 .. RN1905
RN1905AFS .. RN2911
RN2911AFS .. S2818
S2818A .. SE6023
SE6062 .. SM2176
SM2177 .. SRC1205E
SRC1205EF .. STD1802
STD1802T4-A .. T1250
T1251 .. TBC557
TBC558 .. TIP31C
TIP31CE3 .. TIX3034
TIX3035 .. TN5129
TN5130 .. TR01042
TR01062-1 .. UN1216S
UN1217Q .. UP1753
UP1851 .. ZTX1053A
ZTX1055A .. ZTX531
ZTX531K .. ZXTPS720MC
 
2SB557 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SB557 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SB557

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 80

Maximum collector-base voltage |Ucb|, V: 120

Maximum collector-emitter voltage |Uce|, V: 120

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 8

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 4

Collector capacitance (Cc), pF: 500

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of 2SB557 transistor: TO3

2SB557 Equivalent Transistors - Cross-Reference Search

2SB557 PDF doc:

1.1. 2sb557.pdf Size:153K _jmnic

2SB557
2SB557
JMnic Product Specification Silicon PNP Power Transistors 2SB557 DESCRIPTION ·With TO-3 package ·Complement to type 2SD427 ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for 50W high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -8 A IE Emitter current 8 A PC Collector power dissipation TC=25? 80 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB557 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown v

1.2. 2sb557.pdf Size:121K _inchange_semiconductor

2SB557
2SB557
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB557 DESCRIPTION ·With TO-3 package ·Complement to type 2SD427 ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for 50W high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -8 A IE Emitter current 8 A PC Collector power dissipation TC=25? 80 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? ????? INCHANGE SEMICONDUCTOR Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB557 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CON

5.1. 2sb554.pdf Size:66K _no

2SB557
2SB557

5.2. 2sb554.pdf Size:144K _jmnic

2SB557
2SB557
JMnic Product Specification Silicon PNP Power Transistors 2SB554 DESCRIPTION ·With TO-3 package ·Complement to type 2SD424 ·High power dissipation APPLICATIONS ·For use in power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -180 V VCEO Collector-emitter voltage Open base -180 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -15 A IB Base current -4 A PC Collector power dissipation TC=25? 150 W Tj Junction temperature 150 ? Tstg Storage temperature -55~200 ? JMnic Product Specification Silicon PNP Power Transistors 2SB554 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -180 V VCEsat Collector-emitter saturation vo

5.3. 2sb555.pdf Size:149K _jmnic

2SB557
2SB557
JMnic Product Specification Silicon PNP Power Transistors 2SB555 2SB556 DESCRIPTION ·With TO-3 package ·Complement to type 2SD425/426 ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SB555 -140 VCBO Collector-base voltage Open emitter V 2SB556 -120 2SB555 -140 VCEO Collector-emitter voltage Open base V 2SB556 -120 VEBO Emitter-base voltage Open collector -5 V IC Collector current -12 A IE Emitter current 12 A PC Collector power dissipation TC=25? 100 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB555 2SB556 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAME

5.4. 2sb552.pdf Size:144K _jmnic

2SB557
2SB557
JMnic Product Specification Silicon PNP Power Transistors 2SB552 DESCRIPTION ·With TO-3 package ·Complement to type 2SD552 APPLICATIONS ·Power amplifier applications ·Power switching applications ·DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -220 V VCEO Collector-emitter voltage Open base -180 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -15 A IB Base current -4 A PC Collector power dissipation TC=25? 150 W Tj Junction temperature 150 ? Tstg Storage temperature -55~200 ? JMnic Product Specification Silicon PNP Power Transistors 2SB552 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -180 V VCEsat Collector-emitt

5.5. 2sb553.pdf Size:207K _jmnic

2SB557
2SB557
JMnic Product Specification Silicon PNP Power Transistors 2SB553 DESCRIPTION · ·With TO-220C package ·Complement to type 2SD553 ·Low collector saturation voltage APPLICATIONS ·High current switching applications ·Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -70 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -7 A Ta=25? 1.5 PC Collector dissipation W TC=25? 40 Tj Junction temperature 150 ? Tstg Storage temperature -50~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB553 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-

5.6. 2sb550.pdf Size:180K _inchange_semiconductor

2SB557
2SB557
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB550 DESCRIPTION ·With TO-66 package ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplification ·For low speed and power switching PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -70 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -5 A PC Collector power dissipation TC=25? 25 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB550 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -100 V V(BR)CEO Collec

5.7. 2sb554.pdf Size:113K _inchange_semiconductor

2SB557
2SB557
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB554 DESCRIPTION ·With TO-3 package ·Complement to type 2SD424 ·High power dissipation APPLICATIONS ·For use in power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -180 V VCEO Collector-emitter voltage Open base -180 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -15 A IB Base current -4 A PC Collector power dissipation TC=25? 150 W Tj Junction temperature 150 ? Tstg Storage temperature -55~200 ? ????? INCHANGE SEMICONDUCTOR Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB554 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown volt

5.8. 2sb558.pdf Size:206K _inchange_semiconductor

2SB557
2SB557
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SB558 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High Power Dissipation- : PC= 60W(Max)@TC=25? ·Complement to Type 2SD428 APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 40W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IE Emitter Current-Continuous 7 A Collector Power Dissipation PC @TC=25? 60 W TJ Junction Temperature 150 ? Storage Temperature -65~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SB558 ELECTRICAL CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MI

5.9. 2sb551.pdf Size:287K _inchange_semiconductor

2SB557
2SB557
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SB551 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.2V(Typ.)@IC= -2A ·High Power Dissipation- : PC= 25W(Max)@TC=55? APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous -3 A Collector Power Dissipation PC @TC= 25? 25 W TJ Junction Temperature 150 ? Storage Temperature -45~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SB551 ELECTRICAL CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; RBE= ? -50 V V(BR)CBO Collector-Base Breakdown Voltage

5.10. 2sb552.pdf Size:128K _inchange_semiconductor

2SB557
2SB557
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB552 DESCRIPTION ·With TO-3 package ·Complement to type 2SD552 APPLICATIONS ·Power amplifier applications ·Power switching applications ·DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -220 V VCEO Collector-emitter voltage Open base -180 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -15 A IB Base current -4 A PC Collector power dissipation TC=25? 150 W Tj Junction temperature 150 ? Tstg Storage temperature -55~200 ? Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB552 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;I

5.11. 2sb553.pdf Size:169K _inchange_semiconductor

2SB557
2SB557
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB553 DESCRIPTION · ·With TO-220C package ·Complement to type 2SD553 ·Low collector saturation voltage APPLICATIONS ·High current switching applications ·Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -70 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -7 A Ta=25? 1.5 PC Collector dissipation W TC=25? 40 Tj Junction temperature 150 ? Tstg Storage temperature -50~150 ? ????? INCHANGE SEMICONDUCTOR Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB553 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN

5.12. 2sb555_2sb556.pdf Size:116K _inchange_semiconductor

2SB557
2SB557
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB555 2SB556 DESCRIPTION ·With TO-3 package ·Complement to type 2SD425/426 ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SB555 -140 VCBO Collector-base voltage Open emitter V 2SB556 -120 2SB555 -140 VCEO Collector-emitter voltage Open base V 2SB556 -120 VEBO Emitter-base voltage Open collector -5 V IC Collector current -12 A IE Emitter current 12 A PC Collector power dissipation TC=25? 100 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? ????? INCHANGE SEMICONDUCTOR Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB555 2SB556 CH

See also transistors datasheet: 2SB551H , 2SB552 , 2SB553 , 2SB553-O , 2SB553-Y , 2SB554 , 2SB555 , 2SB556 , 2SC5200 , 2SB557S , 2SB558 , 2SB559 , 2SB559D , 2SB559E , 2SB559F , 2SB56 , 2SB560 .

Keywords

 2SB557 Datasheet  2SB557 Datenblatt  2SB557 RoHS  2SB557 Distributor
 2SB557 Application Notes  2SB557 Component  2SB557 Circuit  2SB557 Schematic
 2SB557 Equivalent  2SB557 Cross Reference  2SB557 Data Sheet  2SB557 Fiche Technique

 

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