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2SB827Q
  2SB827Q
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2SB827Q
  2SB827Q
  2SB827Q
 
2SB827Q
  2SB827Q
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU826A
BU902 .. BUP23CF
BUP30 .. BUV90A
BUV90F .. BUY13
BUY13S .. CC338-40
CC5401 .. CFD1408
CFD1499 .. CK22C
CK25 .. CP100
CP1016 .. CSA1220O
CSA1220R .. CSC1674
CSC1674O .. CSD600K
CSD600KD .. D16P2
D16P3 .. D40DU4
D40DU5 .. D45VM2
D45VM3 .. DP350T05
DP500 .. DTA143T
DTA143TCA .. DTC314TV
DTC343TA .. ECG12
ECG123 .. ECG473
ECG474 .. ESM283
ESM2894 .. FCS9015C
FCS9016 .. FJX945
FJX945 .. FMMT597
FMMT6076 .. FV3502
FV3503 .. GC512K
GC515 .. GES5400R
GES5401 .. GMO656A
GP140 .. GT330G
GT330I .. HBDM60V600W
HBF422 .. HPT1012
HPT1210 .. IDD1407
IDD1408 .. JE9092
JE9092A .. KN4L3Z
KN4L4K .. KRA760E
KRA760F .. KRC831F
KRC831U .. KSB1017-O
KSB1017-R .. KSC2785-G
KSC2785-L .. KSD5041-P
KSD5041-Q .. KST56
KST63 .. KT3189V-9
KT3189V9 .. KT6128E
KT6128G .. KT8145A
KT8145B .. KT888A
KT888B .. KTB1151
KTB1234T .. KTD1937
KTD2058 .. MBT3904DW
MBT3904DW1 .. MJ10014
MJ10015 .. MJD32C
MJD32C-1 .. MJE5656
MJE5657 .. MM8002
MM8003 .. MMBT5551R
MMBT5551W .. MP10A
MP10B .. MP4965
MP500 .. MPS2906
MPS2906A .. MPSD02
MPSD03 .. MRF835
MRF840 .. NA11FH
NA11FI .. NB013EU
NB013EV .. NB212EI
NB212EJ .. NKT106
NKT107 .. NPS5131
NPS5132 .. NTE126A
NTE127 .. OC78D
OC78N .. PBSS4620PA
PBSS4630PA .. PH5416
PHD13003C .. PN706
PN706A .. RCA1001
RCA120 .. RN1507
RN1508 .. RN2705
RN2705JE .. S1381
S1382 .. SDM5011
SDM5012 .. SGSIF341
SGSIF343 .. SRA2211
SRA2211E .. STC4250F
STC4250L .. SYL1986
SYL2245 .. TA2333
TA2359A .. TIP127F
TIP127FP .. TIPP32A
TIPP32B .. TN3904
TN3904R .. TP708
TP750 .. UMX18N
UMX1N .. UN9214
UN9215Q .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
2SB827Q All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SB827Q Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SB827Q

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 60

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 7

Maksimalna temperatura (Tj), ¬įC: 150

Transition frequency (ft), MHz: 5

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 70

Noise Figure, dB: -

Package of 2SB827Q transistor: TO218

2SB827Q Equivalent Transistors - Cross-Reference Search

2SB827Q PDF doc:

4.1. 2sb827.pdf Size:102K _sanyo

2SB827Q
2SB827Q
Ordering number:688H PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB827/2SD1063 50V/7A Switching Applicationsa Applications Package Dimensions ∑ Universal high current switching as solenoid driving, unit:mm high speed inverter and converter. 2022A [2SB827/2SD1063] Features ∑ Low collector-to-emitter saturation voltage : VCE(sat)=(Ė)0.4V max. ∑ Wide ASO. 1 : Base 2 : Collector 3 : Emitter ( ) : 2SB827 SANYO : TO-3PB Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (Ė)60 V Collector-to-Emitter Voltage VCEO (Ė)50 V Emitter-to-Base Voltage VEBO (Ė)6 V Collector Current IC (Ė)7 A Collector Current (Pulse) ICP (Ė)14 A Collector Dissipation PC Tc=25?C 60 W ?C Junction Temperature Tj 150 ?C Storage Temperature Tstg Ė55 to +150 Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=(Ė)40V, IE=0 (Ė)0.1 mA Em

4.2. 2sb827.pdf Size:241K _jmnic

2SB827Q
2SB827Q
JMnic Product Specification Silicon PNP Power Transistors 2SB827 ¬∑ DESCRIPTION ¬∑With TO-3PN package ¬∑Complement to type 2SD1063 ¬∑Wide area of safe operation ¬∑Low collector-emitter saturation voltage : VCE(sat)=(‚Äď)0.4V max. APPLICATIONS ¬∑Universal high current switching as solenoid driving,high speed inverter and converter. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -7 A ICP Collector current (Pulse) -14 A PC Collector power dissipation TC=25? 60 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB827 CHARACTERISTICS Tj=25? un

5.1. 2sb828.pdf Size:98K _sanyo

2SB827Q
2SB827Q

5.2. 2sb824.pdf Size:113K _sanyo

2SB827Q
2SB827Q

5.3. 2sb737_2sb821.pdf Size:1246K _rohm

2SB827Q
2SB827Q

5.4. 2sb1188_2sb1182_2sb1240_2sb822_2sb1277_2sb911m.pdf Size:130K _rohm

2SB827Q
2SB827Q
Transistors Medium power Transistor(*32V,*2A) 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures FExternal dimensions (Unit: mm) 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. FStructure Epitaxial planar type PNP silicon transistor (96-131-B24) 215 2SB1188 / 2SB1182 / 2SB1240 / Transistors Transistors 2SB822 / 2SB1277 / 2SB911M FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C) 216 2SB1188 / 2SB1182 / 2SB1240 / Transistors Transistors 2SB822 / 2SB1277 / 2SB911M FPackaging specifications and hFE hFE values are classified as follows : FElectrical characteristic curves 217 2SB1188 / 2SB1182 / 2SB1240 / Transistors Transistors 2SB822 / 2SB1277 / 2SB911M 218

5.5. 2sb828.pdf Size:213K _jmnic

2SB827Q
2SB827Q
JMnic Product Specification Silicon PNP Power Transistors 2SB828 DESCRIPTION ·With TO-3PN package ·Complement to type 2SD1064 ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·Relay drivers,high-speed inverters, converters,and other general high- current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -12 A ICM Collector current-peak -17 A PC Collector power dissipation TC=25? 80 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB828 CHARACTERISTICS Tj=25? unless otherwise specified SYM

5.6. 2sb824.pdf Size:206K _jmnic

2SB827Q
2SB827Q
JMnic Product Specification Silicon PNP Power Transistors 2SB824 DESCRIPTION ·With TO-220 package ·Low collector-emitter saturation voltage ·Complement to type 2SD1060 APPLICATIONS ·Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -5 A ICP Collector current (Pulse) -9 A PC Collector power dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB824 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Co

5.7. 2sb829.pdf Size:263K _jmnic

2SB827Q
2SB827Q
JMnic Product Specification Silicon PNP Power Transistors 2SB829 DESCRIPTION ¬∑With TO-3PN package ¬∑Complement to type 2SD1065 ¬∑Wide area of safe operation ¬∑Low collector saturation voltage : VCE(sat) =‚Äď0.5V max. APPLICATIONS ¬∑Relay drivers, ¬∑High-speed inverters,converters ¬∑General high-current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -15 A ICP Collector current (Pulse) -20 A PC Collector power dissipation TC=25? 90 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB829 CHARACTERISTICS Tj=25? unless

5.8. 2sb825.pdf Size:204K _jmnic

2SB827Q
2SB827Q
JMnic Product Specification Silicon PNP Power Transistors 2SB825 DESCRIPTION ·With TO-220 package ·Low saturation voltage ·Complement to type 2SD1061 APPLICATIONS ·Universal high current switching as solenoid driving;high speed inverter and converter applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -7 A ICP Collector current (Pulse) -12 A PC Collector power dissipation TC=25? 40 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB825 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltag

5.9. 2sb826.pdf Size:229K _jmnic

2SB827Q
2SB827Q
JMnic Product Specification Silicon PNP Power Transistors 2SB826 DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Complement to type 2SD1062 ·Wide area of safe operation APPLICATIONS ·Relay drivers, ·High-speed inverters, converters ·General high-current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -12 A ICP Collector current (Pulse) -15 A PC Collector power dissipation TC=25? 40 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB826 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(B

5.10. 2sb828.pdf Size:271K _inchange_semiconductor

2SB827Q
2SB827Q
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB828 DESCRIPTION ·High Collector Current:: IC= -12A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -6A ·Wide Area of Safe Operation ·Complement to Type 2SD1064 APPLICATIONS ·Designed for relay drivers,high-speed inverters,converters, and other gereral high-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak -17 A Total Power Dissipation PC @ TC=25? 80 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB828 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMET

5.11. 2sb824.pdf Size:159K _inchange_semiconductor

2SB827Q
2SB827Q
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB824 DESCRIPTION ·With TO-220 package ·Low collector-emitter saturation voltage ·Complement to type 2SD1060 APPLICATIONS ·Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -5 A ICP Collector current (Pulse) -9 A PC Collector power dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? ????? INCHANGE SEMICONDUCTOR Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB824 CHARACTERISTICS Tj=25? unless otherwise speci

5.12. 2sb829.pdf Size:236K _inchange_semiconductor

2SB827Q
2SB827Q
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB829 DESCRIPTION ·High Collector Current:: IC= -15A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -8A ·Wide Area of Safe Operation ·Complement to Type 2SD1065 APPLICATIONS ·Designed for relay drivers,high-speed inverters,converters, and other gereral high-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -15 A ICM Collector Current-Peak -20 A Total Power Dissipation PC @ TC=25? 90 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB829 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMET

5.13. 2sb825.pdf Size:165K _inchange_semiconductor

2SB827Q
2SB827Q
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB825 DESCRIPTION ·With TO-220 package ·Low saturation voltage ·Complement to type 2SD1061 APPLICATIONS ·Universal high current switching as solenoid driving;high speed inverter and converter applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -7 A ICP Collector current (Pulse) -12 A PC Collector power dissipation TC=25? 40 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? ????? INCHANGE SEMICONDUCTOR Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB825 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIO

See also transistors datasheet: 2SB825Q , 2SB825R , 2SB825S , 2SB826 , 2SB826Q , 2SB826R , 2SB826S , 2SB827 , BD679 , 2SB827R , 2SB827S , 2SB828 , 2SB828Q , 2SB828R , 2SB828S , 2SB829 , 2SB829Q .

Keywords

 2SB827Q Datasheet  2SB827Q Datenblatt  2SB827Q RoHS  2SB827Q Distributor
 2SB827Q Application Notes  2SB827Q Component  2SB827Q Circuit  2SB827Q Schematic
 2SB827Q Equivalent  2SB827Q Cross Reference  2SB827Q Data Sheet  2SB827Q Fiche Technique

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