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2SB827Q
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2SB827Q
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2SB827Q
  2SB827Q
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
2SB827Q All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SB827Q Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SB827Q

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 60

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 7

Maksimalna temperatura (Tj), ¬įC: 150

Transition frequency (ft), MHz: 5

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 70

Noise Figure, dB: -

Package of 2SB827Q transistor: TO218

2SB827Q Equivalent Transistors - Cross-Reference Search

2SB827Q PDF doc:

4.1. 2sb827.pdf Size:102K _sanyo

2SB827Q
2SB827Q
Ordering number:688H PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB827/2SD1063 50V/7A Switching Applicationsa Applications Package Dimensions ∑ Universal high current switching as solenoid driving, unit:mm high speed inverter and converter. 2022A [2SB827/2SD1063] Features ∑ Low collector-to-emitter saturation voltage : VCE(sat)=(Ė)0.4V max. ∑ Wide ASO. 1 : Base 2 : Collector 3 : Emitter ( ) : 2SB827 SANYO : TO-3PB Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (Ė)60 V Collector-to-Emitter Voltage VCEO (Ė)50 V Emitter-to-Base Voltage VEBO (Ė)6 V Collector Current IC (Ė)7 A Collector Current (Pulse) ICP (Ė)14 A Collector Dissipation PC Tc=25?C 60 W ?C Junction Temperature Tj 150 ?C Storage Temperature Tstg Ė55 to +150 Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=(Ė)40V, IE=0 (Ė)0.1 mA Em

4.2. 2sb827.pdf Size:241K _jmnic

2SB827Q
2SB827Q
JMnic Product Specification Silicon PNP Power Transistors 2SB827 ¬∑ DESCRIPTION ¬∑With TO-3PN package ¬∑Complement to type 2SD1063 ¬∑Wide area of safe operation ¬∑Low collector-emitter saturation voltage : VCE(sat)=(‚Äď)0.4V max. APPLICATIONS ¬∑Universal high current switching as solenoid driving,high speed inverter and converter. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -7 A ICP Collector current (Pulse) -14 A PC Collector power dissipation TC=25? 60 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB827 CHARACTERISTICS Tj=25? un

5.1. 2sb824.pdf Size:113K _sanyo

2SB827Q
2SB827Q

5.2. 2sb828.pdf Size:98K _sanyo

2SB827Q
2SB827Q

5.3. 2sb1188_2sb1182_2sb1240_2sb822_2sb1277_2sb911m.pdf Size:130K _rohm

2SB827Q
2SB827Q
Transistors Medium power Transistor(*32V,*2A) 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures FExternal dimensions (Unit: mm) 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. FStructure Epitaxial planar type PNP silicon transistor (96-131-B24) 215 2SB1188 / 2SB1182 / 2SB1240 / Transistors Transistors 2SB822 / 2SB1277 / 2SB911M FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C) 216 2SB1188 / 2SB1182 / 2SB1240 / Transistors Transistors 2SB822 / 2SB1277 / 2SB911M FPackaging specifications and hFE hFE values are classified as follows : FElectrical characteristic curves 217 2SB1188 / 2SB1182 / 2SB1240 / Transistors Transistors 2SB822 / 2SB1277 / 2SB911M 218

5.4. 2sb737_2sb821.pdf Size:1246K _rohm

2SB827Q
2SB827Q

5.5. 2sb825.pdf Size:204K _jmnic

2SB827Q
2SB827Q
JMnic Product Specification Silicon PNP Power Transistors 2SB825 DESCRIPTION ·With TO-220 package ·Low saturation voltage ·Complement to type 2SD1061 APPLICATIONS ·Universal high current switching as solenoid driving;high speed inverter and converter applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -7 A ICP Collector current (Pulse) -12 A PC Collector power dissipation TC=25? 40 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB825 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltag

5.6. 2sb824.pdf Size:206K _jmnic

2SB827Q
2SB827Q
JMnic Product Specification Silicon PNP Power Transistors 2SB824 DESCRIPTION ·With TO-220 package ·Low collector-emitter saturation voltage ·Complement to type 2SD1060 APPLICATIONS ·Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -5 A ICP Collector current (Pulse) -9 A PC Collector power dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB824 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Co

5.7. 2sb829.pdf Size:263K _jmnic

2SB827Q
2SB827Q
JMnic Product Specification Silicon PNP Power Transistors 2SB829 DESCRIPTION ¬∑With TO-3PN package ¬∑Complement to type 2SD1065 ¬∑Wide area of safe operation ¬∑Low collector saturation voltage : VCE(sat) =‚Äď0.5V max. APPLICATIONS ¬∑Relay drivers, ¬∑High-speed inverters,converters ¬∑General high-current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -15 A ICP Collector current (Pulse) -20 A PC Collector power dissipation TC=25? 90 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB829 CHARACTERISTICS Tj=25? unless

5.8. 2sb826.pdf Size:229K _jmnic

2SB827Q
2SB827Q
JMnic Product Specification Silicon PNP Power Transistors 2SB826 DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Complement to type 2SD1062 ·Wide area of safe operation APPLICATIONS ·Relay drivers, ·High-speed inverters, converters ·General high-current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -12 A ICP Collector current (Pulse) -15 A PC Collector power dissipation TC=25? 40 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB826 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(B

5.9. 2sb828.pdf Size:213K _jmnic

2SB827Q
2SB827Q
JMnic Product Specification Silicon PNP Power Transistors 2SB828 DESCRIPTION ·With TO-3PN package ·Complement to type 2SD1064 ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·Relay drivers,high-speed inverters, converters,and other general high- current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -12 A ICM Collector current-peak -17 A PC Collector power dissipation TC=25? 80 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB828 CHARACTERISTICS Tj=25? unless otherwise specified SYM

5.10. 2sb825.pdf Size:165K _inchange_semiconductor

2SB827Q
2SB827Q
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB825 DESCRIPTION ·With TO-220 package ·Low saturation voltage ·Complement to type 2SD1061 APPLICATIONS ·Universal high current switching as solenoid driving;high speed inverter and converter applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -7 A ICP Collector current (Pulse) -12 A PC Collector power dissipation TC=25? 40 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? ????? INCHANGE SEMICONDUCTOR Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB825 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIO

5.11. 2sb824.pdf Size:159K _inchange_semiconductor

2SB827Q
2SB827Q
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB824 DESCRIPTION ·With TO-220 package ·Low collector-emitter saturation voltage ·Complement to type 2SD1060 APPLICATIONS ·Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -5 A ICP Collector current (Pulse) -9 A PC Collector power dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? ????? INCHANGE SEMICONDUCTOR Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB824 CHARACTERISTICS Tj=25? unless otherwise speci

5.12. 2sb829.pdf Size:236K _inchange_semiconductor

2SB827Q
2SB827Q
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB829 DESCRIPTION ·High Collector Current:: IC= -15A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -8A ·Wide Area of Safe Operation ·Complement to Type 2SD1065 APPLICATIONS ·Designed for relay drivers,high-speed inverters,converters, and other gereral high-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -15 A ICM Collector Current-Peak -20 A Total Power Dissipation PC @ TC=25? 90 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB829 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMET

5.13. 2sb828.pdf Size:271K _inchange_semiconductor

2SB827Q
2SB827Q
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB828 DESCRIPTION ·High Collector Current:: IC= -12A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -6A ·Wide Area of Safe Operation ·Complement to Type 2SD1064 APPLICATIONS ·Designed for relay drivers,high-speed inverters,converters, and other gereral high-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak -17 A Total Power Dissipation PC @ TC=25? 80 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB828 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMET

See also transistors datasheet: 2SB825Q , 2SB825R , 2SB825S , 2SB826 , 2SB826Q , 2SB826R , 2SB826S , 2SB827 , BD679 , 2SB827R , 2SB827S , 2SB828 , 2SB828Q , 2SB828R , 2SB828S , 2SB829 , 2SB829Q .

Keywords

 2SB827Q Datasheet  2SB827Q Datenblatt  2SB827Q RoHS  2SB827Q Distributor
 2SB827Q Application Notes  2SB827Q Component  2SB827Q Circuit  2SB827Q Schematic
 2SB827Q Equivalent  2SB827Q Cross Reference  2SB827Q Data Sheet  2SB827Q Fiche Technique

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