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2SB827Q
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2SB827Q
  2SB827Q
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List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC536SP
2SC537 .. 2SC5819
2SC582 .. 2SC690M
2SC691 .. 2SC90
2SC900 .. 2SD1065S
2SD1066 .. 2SD1257A
2SD1258 .. 2SD1446
2SD1447 .. 2SD1667
2SD1667Q .. 2SD1854
2SD1855 .. 2SD21
2SD2100 .. 2SD2449
2SD2453 .. 2SD365A
2SD366 .. 2SD594
2SD596 .. 2SD794-O
2SD794-R .. 2STF1550
2STF2220 .. 40261
40262 .. 40837
40850 .. A747A
A747B .. ACY23
ACY23V .. AF170
AF171 .. ASY85
ASY86 .. BC158C
BC158V .. BC250
BC250A .. BC340-6
BC341 .. BC487
BC487-18 .. BC817-16
BC817-16L .. BC860
BC860A .. BCW14
BCW14K .. BCW98B
BCW98C .. BCY72QF
BCY76 .. BD233
BD233-10 .. BD371D-6
BD372 .. BD618
BD619 .. BD952F
BD953 .. BDW24
BDW24A .. BDY12-10
BDY12-16 .. BF241C
BF241D .. BF432
BF432L .. BF870EA
BF870S .. BFQ38S
BFQ39 .. BFS505
BFS51 .. BFV97N
BFV98 .. BFY86A
BFY86B .. BLY17
BLY17A .. BSS82BL
BSS82C .. BSX61
BSX62 .. BTB9435L3
BTC1510E3 .. BU209A
BU210 .. BUF405AFI
BUF405AFP .. BUS21C
BUS21D .. BUW74
BUW75 .. BUY78
BUY79 .. CD9012GHI
CD9012J .. CIL148B
CIL148C .. CL155B
CL155C .. CPS1545B
CPS1550B .. CSA952M
CSA952M9AW .. CSC2611
CSC2655 .. CTP1033
CTP1034 .. D29J10
D29J2 .. D42CU11
D42CU12 .. D64TS5
D64VE3 .. DT34-300
DT34-400 .. DTC014EUB
DTC014YEB .. DTL3425
DTL3426 .. ECG2327
ECG2328 .. ED1601D
ED1601E .. ET1550
ET1551 .. FE4016
FE4017 .. FMC4A
FMC5A .. FPC1317
FPC1318 .. FXT551
FXT551SM .. GE10022
GE10023 .. GET2484
GET2904 .. GSDR10025I
GSDR15020 .. GT405B
GT405G .. HEPS3021
HEPS3024 .. HSE125
HSE127 .. IMT1A
IMT2A .. K2105
K2105A .. KRA122S
KRA152F .. KRC114
KRC114M .. KRC864F
KRC864U .. KSB744A-O
KSB744A-R .. KSC3953
KSC3953C .. KSD986
KSD986-O .. KT209L
KT209M .. KT343B
KT343V .. KT640B-2
KT640V-2 .. KT817A9
KT817B .. KT9144A9
KT9145A9 .. KTC2983D
KTC2983L .. KTX215U
KTX216U .. MD1128
MD1129 .. MJ13332
MJ13333 .. MJE13003-P
MJE13003B .. MJF16206
MJF16210 .. MMBR941BLT3
MMBR941LT1 .. MMBTA43LT1
MMBTA44 .. MP1547
MP1547A .. MP601
MP601A .. MPS3710
MPS3711 .. MPSW3725
MPSW42 .. MT0492
MT0493 .. NA21YX
NA21YY .. NB021FJ
NB021FK .. NB213XY
NB213Y .. NKT224
NKT225 .. NR421FE
NR421FF .. NTE2426
NTE2427 .. P213A
P213B .. PDTA113ZE
PDTA113ZM .. PMD13K40
PMD13K60 .. PT902
PT902-1 .. RCA6341
RCA8203 .. RN1905
RN1905AFS .. RN2911
RN2911AFS .. S2818
S2818A .. SE6023
SE6062 .. SM2176
SM2177 .. SRC1205E
SRC1205EF .. STD1802
STD1802T4-A .. T1250
T1251 .. TBC557
TBC558 .. TIP31C
TIP31CE3 .. TIX3034
TIX3035 .. TN5129
TN5130 .. TR01042
TR01062-1 .. UN1216S
UN1217Q .. UP1753
UP1851 .. ZTX1053A
ZTX1055A .. ZTX531
ZTX531K .. ZXTPS720MC
 
2SB827Q All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SB827Q Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SB827Q

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 60

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 7

Maksimalna temperatura (Tj), ¬įC: 150

Transition frequency (ft), MHz: 5

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 70

Noise Figure, dB: -

Package of 2SB827Q transistor: TO218

2SB827Q Equivalent Transistors - Cross-Reference Search

2SB827Q PDF doc:

4.1. 2sb827.pdf Size:102K _sanyo

2SB827Q
2SB827Q
Ordering number:688H PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB827/2SD1063 50V/7A Switching Applicationsa Applications Package Dimensions ∑ Universal high current switching as solenoid driving, unit:mm high speed inverter and converter. 2022A [2SB827/2SD1063] Features ∑ Low collector-to-emitter saturation voltage : VCE(sat)=(Ė)0.4V max. ∑ Wide ASO. 1 : Base 2 : Collector 3 : Emitter ( ) : 2SB827 SANYO : TO-3PB Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (Ė)60 V Collector-to-Emitter Voltage VCEO (Ė)50 V Emitter-to-Base Voltage VEBO (Ė)6 V Collector Current IC (Ė)7 A Collector Current (Pulse) ICP (Ė)14 A Collector Dissipation PC Tc=25?C 60 W ?C Junction Temperature Tj 150 ?C Storage Temperature Tstg Ė55 to +150 Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=(Ė)40V, IE=0 (Ė)0.1 mA Em

4.2. 2sb827.pdf Size:241K _jmnic

2SB827Q
2SB827Q
JMnic Product Specification Silicon PNP Power Transistors 2SB827 ¬∑ DESCRIPTION ¬∑With TO-3PN package ¬∑Complement to type 2SD1063 ¬∑Wide area of safe operation ¬∑Low collector-emitter saturation voltage : VCE(sat)=(‚Äď)0.4V max. APPLICATIONS ¬∑Universal high current switching as solenoid driving,high speed inverter and converter. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -7 A ICP Collector current (Pulse) -14 A PC Collector power dissipation TC=25? 60 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB827 CHARACTERISTICS Tj=25? un

5.1. 2sb824.pdf Size:113K _sanyo

2SB827Q
2SB827Q

5.2. 2sb828.pdf Size:98K _sanyo

2SB827Q
2SB827Q

5.3. 2sb1188_2sb1182_2sb1240_2sb822_2sb1277_2sb911m.pdf Size:130K _rohm

2SB827Q
2SB827Q
Transistors Medium power Transistor(*32V,*2A) 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures FExternal dimensions (Unit: mm) 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. FStructure Epitaxial planar type PNP silicon transistor (96-131-B24) 215 2SB1188 / 2SB1182 / 2SB1240 / Transistors Transistors 2SB822 / 2SB1277 / 2SB911M FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C) 216 2SB1188 / 2SB1182 / 2SB1240 / Transistors Transistors 2SB822 / 2SB1277 / 2SB911M FPackaging specifications and hFE hFE values are classified as follows : FElectrical characteristic curves 217 2SB1188 / 2SB1182 / 2SB1240 / Transistors Transistors 2SB822 / 2SB1277 / 2SB911M 218

5.4. 2sb737_2sb821.pdf Size:1246K _rohm

2SB827Q
2SB827Q

5.5. 2sb825.pdf Size:204K _jmnic

2SB827Q
2SB827Q
JMnic Product Specification Silicon PNP Power Transistors 2SB825 DESCRIPTION ·With TO-220 package ·Low saturation voltage ·Complement to type 2SD1061 APPLICATIONS ·Universal high current switching as solenoid driving;high speed inverter and converter applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -7 A ICP Collector current (Pulse) -12 A PC Collector power dissipation TC=25? 40 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB825 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltag

5.6. 2sb824.pdf Size:206K _jmnic

2SB827Q
2SB827Q
JMnic Product Specification Silicon PNP Power Transistors 2SB824 DESCRIPTION ·With TO-220 package ·Low collector-emitter saturation voltage ·Complement to type 2SD1060 APPLICATIONS ·Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -5 A ICP Collector current (Pulse) -9 A PC Collector power dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB824 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Co

5.7. 2sb829.pdf Size:263K _jmnic

2SB827Q
2SB827Q
JMnic Product Specification Silicon PNP Power Transistors 2SB829 DESCRIPTION ¬∑With TO-3PN package ¬∑Complement to type 2SD1065 ¬∑Wide area of safe operation ¬∑Low collector saturation voltage : VCE(sat) =‚Äď0.5V max. APPLICATIONS ¬∑Relay drivers, ¬∑High-speed inverters,converters ¬∑General high-current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -15 A ICP Collector current (Pulse) -20 A PC Collector power dissipation TC=25? 90 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB829 CHARACTERISTICS Tj=25? unless

5.8. 2sb826.pdf Size:229K _jmnic

2SB827Q
2SB827Q
JMnic Product Specification Silicon PNP Power Transistors 2SB826 DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Complement to type 2SD1062 ·Wide area of safe operation APPLICATIONS ·Relay drivers, ·High-speed inverters, converters ·General high-current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -12 A ICP Collector current (Pulse) -15 A PC Collector power dissipation TC=25? 40 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB826 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(B

5.9. 2sb828.pdf Size:213K _jmnic

2SB827Q
2SB827Q
JMnic Product Specification Silicon PNP Power Transistors 2SB828 DESCRIPTION ·With TO-3PN package ·Complement to type 2SD1064 ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·Relay drivers,high-speed inverters, converters,and other general high- current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -12 A ICM Collector current-peak -17 A PC Collector power dissipation TC=25? 80 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB828 CHARACTERISTICS Tj=25? unless otherwise specified SYM

5.10. 2sb825.pdf Size:165K _inchange_semiconductor

2SB827Q
2SB827Q
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB825 DESCRIPTION ·With TO-220 package ·Low saturation voltage ·Complement to type 2SD1061 APPLICATIONS ·Universal high current switching as solenoid driving;high speed inverter and converter applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -7 A ICP Collector current (Pulse) -12 A PC Collector power dissipation TC=25? 40 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? ????? INCHANGE SEMICONDUCTOR Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB825 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIO

5.11. 2sb824.pdf Size:159K _inchange_semiconductor

2SB827Q
2SB827Q
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB824 DESCRIPTION ·With TO-220 package ·Low collector-emitter saturation voltage ·Complement to type 2SD1060 APPLICATIONS ·Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -5 A ICP Collector current (Pulse) -9 A PC Collector power dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? ????? INCHANGE SEMICONDUCTOR Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB824 CHARACTERISTICS Tj=25? unless otherwise speci

5.12. 2sb829.pdf Size:236K _inchange_semiconductor

2SB827Q
2SB827Q
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB829 DESCRIPTION ·High Collector Current:: IC= -15A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -8A ·Wide Area of Safe Operation ·Complement to Type 2SD1065 APPLICATIONS ·Designed for relay drivers,high-speed inverters,converters, and other gereral high-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -15 A ICM Collector Current-Peak -20 A Total Power Dissipation PC @ TC=25? 90 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB829 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMET

5.13. 2sb828.pdf Size:271K _inchange_semiconductor

2SB827Q
2SB827Q
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB828 DESCRIPTION ·High Collector Current:: IC= -12A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -6A ·Wide Area of Safe Operation ·Complement to Type 2SD1064 APPLICATIONS ·Designed for relay drivers,high-speed inverters,converters, and other gereral high-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak -17 A Total Power Dissipation PC @ TC=25? 80 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB828 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMET

See also transistors datasheet: 2SB825Q , 2SB825R , 2SB825S , 2SB826 , 2SB826Q , 2SB826R , 2SB826S , 2SB827 , BD679 , 2SB827R , 2SB827S , 2SB828 , 2SB828Q , 2SB828R , 2SB828S , 2SB829 , 2SB829Q .

Keywords

 2SB827Q Datasheet  2SB827Q Datenblatt  2SB827Q RoHS  2SB827Q Distributor
 2SB827Q Application Notes  2SB827Q Component  2SB827Q Circuit  2SB827Q Schematic
 2SB827Q Equivalent  2SB827Q Cross Reference  2SB827Q Data Sheet  2SB827Q Fiche Technique

 

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