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2SB827Q
  2SB827Q
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2SB827Q
  2SB827Q
  2SB827Q
 
2SB827Q
  2SB827Q
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU526A/6
BU526A/7 .. BUL742C
BUL74A .. BUV47
BUV47A .. BUX83/9
BUX84 .. C945
C945LT1 .. CENW45
CF103 .. CJD47
CJD50 .. CMPTA63
CMPTA64 .. CS9018
CS9018D .. CSC1047
CSC1047B .. CSD1638
CSD1733 .. D11C1051
D11C1053 .. D39J6
D39J7 .. D45C4
D45C5 .. DMB2227A
DMJT9435 .. DTA123JUB
DTA123Y .. DTC143ZE
DTC143ZEA .. DZTA42
DZTA92 .. ECG361
ECG362 .. ESM138
ESM139 .. FC106
FC107 .. FJV4108R
FJV4109R .. FMMT5131
FMMT5132 .. FT4024
FT4025 .. GC181A
GC189 .. GES4926
GES4927 .. GI3638A
GI3641 .. GT3110A-2
GT311A .. HA7633
HA7723 .. HN2A26FS
HN2C01FE .. IDA1146
IDA1263 .. JE5401A
JE5401B .. KGS1002
KGS1003 .. KRA733F
KRA733U .. KRC668U
KRC669E .. KSA709-G
KSA709-O .. KSC2690A
KSC2690A-O .. KSD261-O
KSD261-R .. KSR2112
KSR2113 .. KT315N
KT315N-1 .. KT6111V
KT6112A .. KT8130A
KT8130B .. KT855V
KT856A .. KTA1807L
KTA1834D .. KTC9013
KTC9013S .. MA4103
MA4104 .. MH8211
MH8212 .. MJB44H11
MJB45H11 .. MJE4342
MJE4343 .. MM4209
MM4209A .. MMBT4965
MMBT5087L .. MMUN2215
MMUN2215L .. MP4052
MP4053 .. MPQ5858
MPQ5910 .. MPS929
MPS929A .. MRF455
MRF458 .. NA01F
NA01FG .. NB011HJ
NB011HK .. NB211EG
NB211EH .. NESG2021M16
NESG2030M04 .. NPS3903R
NPS3904 .. NSS60200LT1G
NSS60201LT1G .. OC480
OC480K .. PBSS4021PT
PBSS4032ND .. PEMD18
PEMD19 .. PN4403
PN4888 .. Q-00269A
Q-00369C .. RN1317
RN1318 .. RN2411
RN2412 .. RT657M
RT679M .. SD409
SD410 .. SGS911
SGS912 .. SRA2203S
SRA2203SF .. STB13007DT4
STB205L .. SUT465N
SUT466N .. TA1763
TA1763A .. TI814
TI815 .. TIPL757
TIPL757A .. TN3444
TN3467 .. TP4889
TP4890 .. UMH13N
UMH15N .. UN6218
UN6219 .. ZT1702
ZT1708 .. ZTX3701L
ZTX3701M .. ZXTN649F
ZXTNS618MC .. ZXTPS720MC
 
2SB827Q All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SB827Q Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SB827Q

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 60

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 7

Maksimalna temperatura (Tj), ¬įC: 150

Transition frequency (ft), MHz: 5

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 70

Noise Figure, dB: -

Package of 2SB827Q transistor: TO218

2SB827Q Equivalent Transistors - Cross-Reference Search

2SB827Q PDF doc:

4.1. 2sb827.pdf Size:102K _sanyo

2SB827Q
2SB827Q
Ordering number:688H PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB827/2SD1063 50V/7A Switching Applicationsa Applications Package Dimensions ∑ Universal high current switching as solenoid driving, unit:mm high speed inverter and converter. 2022A [2SB827/2SD1063] Features ∑ Low collector-to-emitter saturation voltage : VCE(sat)=(Ė)0.4V max. ∑ Wide ASO. 1 : Base 2 : Collector 3 : Emitter ( ) : 2SB827 SANYO : TO-3PB Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (Ė)60 V Collector-to-Emitter Voltage VCEO (Ė)50 V Emitter-to-Base Voltage VEBO (Ė)6 V Collector Current IC (Ė)7 A Collector Current (Pulse) ICP (Ė)14 A Collector Dissipation PC Tc=25?C 60 W ?C Junction Temperature Tj 150 ?C Storage Temperature Tstg Ė55 to +150 Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=(Ė)40V, IE=0 (Ė)0.1 mA Em

4.2. 2sb827.pdf Size:241K _jmnic

2SB827Q
2SB827Q
JMnic Product Specification Silicon PNP Power Transistors 2SB827 ¬∑ DESCRIPTION ¬∑With TO-3PN package ¬∑Complement to type 2SD1063 ¬∑Wide area of safe operation ¬∑Low collector-emitter saturation voltage : VCE(sat)=(‚Äď)0.4V max. APPLICATIONS ¬∑Universal high current switching as solenoid driving,high speed inverter and converter. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -7 A ICP Collector current (Pulse) -14 A PC Collector power dissipation TC=25? 60 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB827 CHARACTERISTICS Tj=25? un

5.1. 2sb828.pdf Size:98K _sanyo

2SB827Q
2SB827Q

5.2. 2sb824.pdf Size:113K _sanyo

2SB827Q
2SB827Q

5.3. 2sb737_2sb821.pdf Size:1246K _rohm

2SB827Q
2SB827Q

5.4. 2sb1188_2sb1182_2sb1240_2sb822_2sb1277_2sb911m.pdf Size:130K _rohm

2SB827Q
2SB827Q
Transistors Medium power Transistor(*32V,*2A) 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures FExternal dimensions (Unit: mm) 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. FStructure Epitaxial planar type PNP silicon transistor (96-131-B24) 215 2SB1188 / 2SB1182 / 2SB1240 / Transistors Transistors 2SB822 / 2SB1277 / 2SB911M FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C) 216 2SB1188 / 2SB1182 / 2SB1240 / Transistors Transistors 2SB822 / 2SB1277 / 2SB911M FPackaging specifications and hFE hFE values are classified as follows : FElectrical characteristic curves 217 2SB1188 / 2SB1182 / 2SB1240 / Transistors Transistors 2SB822 / 2SB1277 / 2SB911M 218

5.5. 2sb828.pdf Size:213K _jmnic

2SB827Q
2SB827Q
JMnic Product Specification Silicon PNP Power Transistors 2SB828 DESCRIPTION ·With TO-3PN package ·Complement to type 2SD1064 ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·Relay drivers,high-speed inverters, converters,and other general high- current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -12 A ICM Collector current-peak -17 A PC Collector power dissipation TC=25? 80 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB828 CHARACTERISTICS Tj=25? unless otherwise specified SYM

5.6. 2sb824.pdf Size:206K _jmnic

2SB827Q
2SB827Q
JMnic Product Specification Silicon PNP Power Transistors 2SB824 DESCRIPTION ·With TO-220 package ·Low collector-emitter saturation voltage ·Complement to type 2SD1060 APPLICATIONS ·Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -5 A ICP Collector current (Pulse) -9 A PC Collector power dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB824 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Co

5.7. 2sb829.pdf Size:263K _jmnic

2SB827Q
2SB827Q
JMnic Product Specification Silicon PNP Power Transistors 2SB829 DESCRIPTION ¬∑With TO-3PN package ¬∑Complement to type 2SD1065 ¬∑Wide area of safe operation ¬∑Low collector saturation voltage : VCE(sat) =‚Äď0.5V max. APPLICATIONS ¬∑Relay drivers, ¬∑High-speed inverters,converters ¬∑General high-current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -15 A ICP Collector current (Pulse) -20 A PC Collector power dissipation TC=25? 90 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB829 CHARACTERISTICS Tj=25? unless

5.8. 2sb825.pdf Size:204K _jmnic

2SB827Q
2SB827Q
JMnic Product Specification Silicon PNP Power Transistors 2SB825 DESCRIPTION ·With TO-220 package ·Low saturation voltage ·Complement to type 2SD1061 APPLICATIONS ·Universal high current switching as solenoid driving;high speed inverter and converter applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -7 A ICP Collector current (Pulse) -12 A PC Collector power dissipation TC=25? 40 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB825 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltag

5.9. 2sb826.pdf Size:229K _jmnic

2SB827Q
2SB827Q
JMnic Product Specification Silicon PNP Power Transistors 2SB826 DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Complement to type 2SD1062 ·Wide area of safe operation APPLICATIONS ·Relay drivers, ·High-speed inverters, converters ·General high-current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -12 A ICP Collector current (Pulse) -15 A PC Collector power dissipation TC=25? 40 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SB826 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(B

5.10. 2sb828.pdf Size:271K _inchange_semiconductor

2SB827Q
2SB827Q
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB828 DESCRIPTION ·High Collector Current:: IC= -12A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -6A ·Wide Area of Safe Operation ·Complement to Type 2SD1064 APPLICATIONS ·Designed for relay drivers,high-speed inverters,converters, and other gereral high-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak -17 A Total Power Dissipation PC @ TC=25? 80 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB828 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMET

5.11. 2sb824.pdf Size:159K _inchange_semiconductor

2SB827Q
2SB827Q
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB824 DESCRIPTION ·With TO-220 package ·Low collector-emitter saturation voltage ·Complement to type 2SD1060 APPLICATIONS ·Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -5 A ICP Collector current (Pulse) -9 A PC Collector power dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? ????? INCHANGE SEMICONDUCTOR Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB824 CHARACTERISTICS Tj=25? unless otherwise speci

5.12. 2sb829.pdf Size:236K _inchange_semiconductor

2SB827Q
2SB827Q
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB829 DESCRIPTION ·High Collector Current:: IC= -15A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -8A ·Wide Area of Safe Operation ·Complement to Type 2SD1065 APPLICATIONS ·Designed for relay drivers,high-speed inverters,converters, and other gereral high-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -15 A ICM Collector Current-Peak -20 A Total Power Dissipation PC @ TC=25? 90 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB829 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMET

5.13. 2sb825.pdf Size:165K _inchange_semiconductor

2SB827Q
2SB827Q
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB825 DESCRIPTION ·With TO-220 package ·Low saturation voltage ·Complement to type 2SD1061 APPLICATIONS ·Universal high current switching as solenoid driving;high speed inverter and converter applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -7 A ICP Collector current (Pulse) -12 A PC Collector power dissipation TC=25? 40 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? ????? INCHANGE SEMICONDUCTOR Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB825 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIO

See also transistors datasheet: 2SB825Q , 2SB825R , 2SB825S , 2SB826 , 2SB826Q , 2SB826R , 2SB826S , 2SB827 , BD679 , 2SB827R , 2SB827S , 2SB828 , 2SB828Q , 2SB828R , 2SB828S , 2SB829 , 2SB829Q .

Keywords

 2SB827Q Datasheet  2SB827Q Datenblatt  2SB827Q RoHS  2SB827Q Distributor
 2SB827Q Application Notes  2SB827Q Component  2SB827Q Circuit  2SB827Q Schematic
 2SB827Q Equivalent  2SB827Q Cross Reference  2SB827Q Data Sheet  2SB827Q Fiche Technique

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