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2SC1080
  2SC1080
  2SC1080
 
2SC1080
  2SC1080
  2SC1080
 
2SC1080
  2SC1080
 
 
List
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
2SC1080 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SC1080 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC1080

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 100

Maximum collector-base voltage |Ucb|, V: 110

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 12

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 1

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of 2SC1080 transistor: TO3

2SC1080 Equivalent Transistors - Cross-Reference Search

2SC1080 PDF doc:

1.1. 2sc1079_2sc1080.pdf Size:122K _inchange_semiconductor

2SC1080
2SC1080
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1079 2SC1080 DESCRIPTION Ў¤ With TO-3 package Ў¤ Complement to type 2SA679/680 Ў¤ High power dissipation APPLICATIONS Ў¤ For audio power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO Collector-base voltage PARAMETER CONDITIONS 2SC1079 2SC1080 VCEO VEBO IC IE PC Tj Tstg INCH Emitter current Collector-emitter voltage ANG 2SC1079 EMIC ES Open emitter Open base Open collector DUC ON VALUE 120 TOR UNIT V 100 120 V 100 5 12 -12 V A A W Ўж Ўж 2SC1080 Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25Ўж 100 150 -65~150

4.1. 2sc108a_2sc109a.pdf Size:42K _toshiba

2SC1080
2SC1080

5.1. 2sc1046.pdf Size:39K _sanyo

2SC1080
2SC1080

5.2. 2sc1070.pdf Size:24K _nec

2SC1080
2SC1080

5.3. 2sc1070b.pdf Size:24K _nec

2SC1080
2SC1080

5.4. 2sc1009a.pdf Size:325K _nec

2SC1080
2SC1080

5.5. 2sc1047.pdf Size:56K _panasonic

2SC1080
2SC1080
Transistor 2SC1047 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 5.0 0.2 4.0 0.2 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V 1 2 3 1:Emitter Collector current IC 20 mA 2:Collector 3:Base Collector power dissipation PC 400 mW 2.54 0.15 JEDEC:TO92 Junction temperature Tj 150 ?C EIAJ:SC43A Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10 A, IE = 0 30 V Emitter to base voltage VEBO IE = 10 A, IC = 0 3 V Forward current transfer ratio hFE* VCB = 6V, IE = 1mA 40 260 Base to emitter voltage VBE VCB = 6V, IE = 1mA 0.72 V Common emitter reverse transfer capacitance C

5.6. 2sc1047_e.pdf Size:60K _panasonic

2SC1080
2SC1080
Transistor 2SC1047 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 5.0 0.2 4.0 0.2 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V 1 2 3 1:Emitter Collector current IC 20 mA 2:Collector 3:Base Collector power dissipation PC 400 mW 2.54 0.15 JEDEC:TO92 Junction temperature Tj 150 ?C EIAJ:SC43A Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10 A, IE = 0 30 V Emitter to base voltage VEBO IE = 10 A, IC = 0 3 V Forward current transfer ratio hFE* VCB = 6V, IE = 1mA 40 260 Base to emitter voltage VBE VCB = 6V, IE = 1mA 0.72 V Common emitter reverse transfer capacitance C

5.7. 2sc1061.pdf Size:110K _mospec

2SC1080
2SC1080
A A A

5.8. 2sc1098.pdf Size:52K _no

2SC1080
2SC1080

5.9. 2sc1060.pdf Size:46K _no

2SC1080
2SC1080

5.10. 2sc1034.pdf Size:453K _sony

2SC1080
2SC1080

5.11. 2sc1008.pdf Size:78K _secos

2SC1080
2SC1080
2SC1008 0.7A , 80 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? General Purpose Switching and Amplification. G H ?Emitter ?Base ?Collector J CLASSIFICATION OF hFE A D Millimeter REF. Min. Max. Product-Rank 2SC1008-R 2SC1008-Q 2SC1008-Y 2SC1008-G B A 4.40 4.70 B 4.30 4.70 C 12.70 - Range 40~80 70~140 120~240 200~400 K D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. E C F H 1.10 - J 2.42 2.66 K 0.36 0.76 Collector ?? ?? Base ?? Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 80 V Collector to Emitter Voltage VCEO 60 V Emitter to Base Voltage VEBO 8 V Collector Current - Continuous IC 0.7 A Collector Power Dissipation PC 800 mW Thermal Resistance From Junction to Ambient R?JA 156 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~15

5.12. 2sc1050.pdf Size:188K _wingshing

2SC1080
2SC1080
Silicon Epitaxial Planar Transistor 2SC1050 GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose TO-3 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 300 V Collector-emitter voltage (open base) VCEO - 250 V Collector current (DC) IC - 1 A Collector current peak value A ICM - Total power dissipation Tmb 25 Ptot - 40 W Collector-emitter saturation voltage IC = 0.5A; IB = 0.1A VCEsat - 1.2 V Diode forward voltage IF = 0.5A 1.5 2.0 V VF Fall time - s tf LIMITING VALUES SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value VBE = 0V - 300 V VCESM Collector-emitter voltage (open base) - 250 V VCEO Emitter-base oltage (open colloctor) 5 V VEBO Collector current (DC) - 1 A IC Base current (DC) - 0.2 A IB Total power dissipation Tmb 25 - 40 W Ptot Storage temperature -55 150 T

5.13. 2sc1008.pdf Size:352K _hua-yuan

2SC1080
2SC1080
??????????? DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD. TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189 TO-92 Plastic-Encapsulate Transistors 2SC1008 TRANSISTOR(NPN ) TO92 FEATURES 1.EMITTER Power dissipation PCM : 0.8 W(Tamb=25?) 2. BASE Collector current 3. COLLECTOR ICM : 0.7 A Collector-base voltage 1 2 3 V(BR)CBO : 80 V Operating and storage junction temperature range TJ,Tstg: -55? to +150? ELECTRICAL CHARACTERISTICS(Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Ic= 100?A , I =0 Collector-base breakdown voltage V(BR) E 80 V CBO Collector-emitter breakdown voltage V(BR) I = 10mA , I =0 60 V CEO C B I = 10?A, I =0 Emitter-base breakdown voltage V(BR) E C 8 V EBO ?A Collector cut-off current I V =60 V , I =0 0.1 CBO CB E ?A Emitter cut-off current I V = 5 V , I =0 0.1 EBO EB C DC current gain h V = 2 V, I =50mA 40 400 FE CE C Collector-emitter saturation voltag

5.14. 2sc1030.pdf Size:44K _jmnic

2SC1080
2SC1080
Power Transistors www.jmnic.com 2SC1030 Silicon NPN Transistors 1B 2E 3C Features With TO-3 package Low frequency power amplifications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 6 V IC Collector current-Continuous 6 A PD Total Power Dissipation@TC=25 50 W Tj Junction temperature 200 Tstg Storage temperature -55~200 TO-3 Electrical Characteristics Tc=25 SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCEO Collector-Emitter Sustaining Voltage IC=0.2A; IB=0 80 V VCER Collector-Emitter Sustaining Voltage ICEO Collector Cutoff Current VCE=30V; IB=0 2.0 mA IEBO Emitter Cutoff Current VEB=6V; IC=0 1.0 mA ICBO Collector Cutoff Current VCB=30V; IE=0 1.0 mA VEBO Base-emitter breakdown voltage VCE(sat-1) Collector-emitter saturation voltages IC=5.0A; IB=1.0A 1.5 V VCE(sat-2) Collector-emitter saturation voltages VCE(sat-3) Collecto

5.15. 2sc1027.pdf Size:113K _inchange_semiconductor

2SC1080
2SC1080
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1027 DESCRIPTION Ў¤ With TO-3 package Ў¤ High power dissipation Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ Switching regulators Ў¤ DC-DC convertor Ў¤ General purpose power amplifiers PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Fig.1 simplified outline (TO-3) and symbol HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current SEM GE OND IC CONDITIONS TOR UC VALUE 250 80 5 6 UNIT V V V A W Ўж Ўж Open emitter Open base Open collector Collector power dissipation Junction temperature Storage temperature TC=25Ўж 50 150 -55~150

5.16. 2sc1050.pdf Size:114K _inchange_semiconductor

2SC1080
2SC1080
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1050 DESCRIPTION Ў¤ With TO-3 package Ў¤ High breakdown voltage APPLICATIONS Ў¤ For use in audio and general purpose applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER CONDITIONS Open emitter Collector-base voltage Collector-emitter voltage HAN INC Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature SEM GE Open base Tmb=25Ўж OND IC TOR UC VALUE 300 300 6 1 40 150 -55~150 Ўж Ўж UNIT V V V A W Open collector

5.17. 2sc1096.pdf Size:117K _inchange_semiconductor

2SC1080
2SC1080
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-202 package Ў¤ Low breakdown voltage Ў¤ High current Ў¤ High fT APPLICATIONS Ў¤ For audio frequency power amplifier and low speed switching applications Ў¤ Suitable for output stages of 3 to 5 watts car radio sets and car stereo PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SC1096 Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Open base Fig.1 simplified outline (TO-202) and symbol ANG INCH Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current SEM E CONDITIONS OND IC TOR UC VALUE 40 30 5 3 6 0.6 UNIT V V V A A A Open emitter Open collector Ta=25Ўж PC Collector power dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature 1.2 W 10 150 -55~150 Ўж Ўж

5.18. 2sc1098_2sc1098a.pdf Size:118K _inchange_semiconductor

2SC1080
2SC1080
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1098 2SC1098A DESCRIPTION Ў¤ With TO-202 package Ў¤ High Voltage Ў¤ High transition frequency APPLICATIONS Ў¤ Audio frequency power amplifier Ў¤ Low speed switching Ў¤ Suitable for output stages of 5~17W small stereo sets PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO PARAMETER Fig.1 simplified outline (TO-202) and symbol VCEO HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current SEM GE 2SC1098 2SC1098A Open emitter OND IC CONDITIONS TOR UC VALUE 70 45 V 60 UNIT V Open base VEBO IC ICM IB Open collector 5 3 5 0.6 V A A A Ta=25Ўж PT Total power dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature 1.2 W 10 150 -55~150 Ўж Ўж

5.19. 2sc1051.pdf Size:120K _inchange_semiconductor

2SC1080
2SC1080
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1051 DESCRIPTION Ў¤ With TO-3 package Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For low frequency power amplifier and large power switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER ANG CH Collector-base voltage IN Collector-emitter voltage EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE 150 100 5 7 UNIT V V V A W Ўж Ўж Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25Ўж 60 150 -55~150

5.20. 2sc1061.pdf Size:145K _inchange_semiconductor

2SC1080
2SC1080
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1061 DESCRIPTION ·Low Collector Saturation Voltage- :VCE(sat)= 1.0(V)(Max)@ IC= 2A ·DC Current Gain- : hFE= 35-320 @ IC= 0.5A ·Complement to Type 2SA671 APPLICATIONS ·Designed for use in low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 8 A IBB Base Collector Current-Continuous 0.5 A Total Power Dissipation PC @ TC=25? 25 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 5.0 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1061 ELECTRICAL CHARACT

5.21. 2sc1008.pdf Size:346K _wietron

2SC1080
2SC1080
WEITRON 2SC1008 NPN Plastic-Encapsulate Transistor P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE TO-92 MAXIMUM RATINGS (T unless otherwise noted) A=25°C Parameter Symbol Value Units Collector-Base Voltage V VCBO 80 A Collector Current ICM 0.7 Power Dissipation PCM 0.8 W -55 to +150 Junction Temperature TJ °C -55 to +150 Tstg Storage Temperature °C ELECTRICAL CHARACTERISTICS (Tamb=25°C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX Units IC= 100µA, IE=0 Collector-base breakdown voltage V(BR)CBO 80 V 60 V V(BR)CEO IC= 10mA, IB=0 Collector-emitter breakdown voltage (BR)EBO 8 V Emitter-base breakdown voltage V IE= 10µA, IC=0 ICBO µA VCB= 60V, IE=0 0.1 Collector cut-off current IEBO VEB= 5V, IC=0 Emitter cut-off current 0.1 µA hFE DC current gain VCE= 2V, IC= 50mA 40 400 VCE(sat) IC=500mA, IB= 50mA V Collector-emitter saturation voltage 0.4 Base-emitter saturation voltage VBE(sat) 1.1 V IC=500mA, IB= 50mA Tra

See also transistors datasheet: 2SC1075Z , 2SC1076 , 2SC1076Z , 2SC1077 , 2SC1077A , 2SC1078 , 2SC1079 , 2SC108 , BC548 , 2SC1081 , 2SC1082 , 2SC1083 , 2SC1083F , 2SC1084 , 2SC1085 , 2SC1086 , 2SC1087 .

Keywords

 2SC1080 Datasheet  2SC1080 Datenblatt  2SC1080 RoHS  2SC1080 Distributor
 2SC1080 Application Notes  2SC1080 Component  2SC1080 Circuit  2SC1080 Schematic
 2SC1080 Equivalent  2SC1080 Cross Reference  2SC1080 Data Sheet  2SC1080 Fiche Technique

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