All Transistors Datasheet

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1106 DESCRIPTION Ў¤ With TO-3 package Ў¤ High power dissipation Ў¤ High breakdown voltage APPLICATIONS Ў¤ For voltage regulator ,inverter and switching mode power supply applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER SEM GE HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Open emitter OND IC CONDITIONS TOR UC VALUE 350 250 6 2 UNIT V V V A W Ўж Ўж Open base Open collector Collector power dissipation Junction temperature Storage temperature TC=25Ўж 80 150 -55~150

5.1. 2sc1169.pdf Size:63K _toshiba

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.2. 2sc1173.pdf Size:93K _toshiba

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.3. 2sc1162.pdf Size:29K _hitachi

2SC1162 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SA715 Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25�C) Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 5V Collector current IC 2.5 A Collector peak current IC(peak) 3A Collector power dissipation PC 0.75 W PC*1 10 W Junction temperature Tj 150 � C Storage temperature Tstg �55 to +150 � C Note: 1. Value at TC = 25� C. 2SC1162 Electrical Characteristics (Ta = 25�C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 35 � � V IC = 1 mA, IE = 0 voltage Collector to emitter breakdown V(BR)CEO 35 � � V IC = 10 mA, RBE = ? voltage Emitter to base breakdown V(BR)EBO 5 � � V IE = 1 mA, IC = 0 voltage Collector cutoff current ICBO � � 20 � A VCB = 35 V, IE = 0 DC current transfer ratio hFE*1 60 � 320 VCE = 2 V, I

5.4. 2sc1166.pdf Size:49K _no

5.5. 2sc1122a.pdf Size:191K _no

5.6. 2sc1162.pdf Size:392K _secos

2SC1162 2.5A , 35V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-126 ? Low frequency power amplifier ?Emitter ?Collector ?Base CLASSIFICATION OF hFE (1) Product-Rank 2SC1162-B 2SC1162-C 2SC1162-D A B E Range 60~120 100~200 160~320 F C N H L M K D J G Collector ? Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 7.40 7.80 H 1.10 1.50 ? B 2.50 2.90 J 0.45 0.60 C 10.60 11.00 K 0.66 0.86 Base D 15.30 15.70 L 2.10 2.30 E 3.70 3.90 M 1.17 1.37 ?? F 3.90 4.10 N 3.00 3.20 G 2.29 TYP. Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 35 V Collector to Emitter Voltage VCEO 35 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 2.5 A Collector Power Dissipation PC 750 mW Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTR

5.7. 2sc1172.pdf Size:69K _wingshing

NPN TRIPLE DIFFUSED 2SC1172 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS (No Damper Diode) TO-3 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 5 A Collector Dissipation (Tc=25? PC 50 W ? ? ? Junction Temperature Tj 150 ? ? ? ? ? Storage Temperature Tstg -50~150 ELECTRICAL CHARACTERISTICS (TA=25? ?) ? ? Characteristic Symbol Test Condition Min Typ Max Unit Collector- Emitter Cutoff Current(VBE=0) ICES VCE= 600 V , RBE=0 1.0 mA Collector Cutoff Current ICBO VCB= 800 V , IE=0 10 �A Emitter Cutoff Current IEBO VEB= 4V , IC=0 1.0 mA DC Current Gain hFE VCE= 5V , IC=1A 8 Collector- Emitter Saturation Voltage VCE(sat) IC= 4A , IB=1A 5.0 V Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276

5.8. 2sc1187.pdf Size:73K _usha

Transistors 2SC1187

5.9. 2sc1163.pdf Size:113K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1163 DESCRIPTION · ·With TO-126 package ·High power dissipation APPLICATIONS ·Useful for high-voltage general purpose applications ·Suitable for transformerless ,line-operated equipment PINNING (see Fig.2) PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 4 V IC Collector current 0.1 A PD Total power dissipation TC=25? 20.8 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-C Thermal resistance junction to case 6.25 ?/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1163 CHARACTERISTICS Tj=25? unless otherwise specifi

5.10. 2sc1170a.pdf Size:129K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1170A DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1400 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 3.5 A IB Base current 1.0 A PC Collector power dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction case 2.5 ?/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1170A CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CO

5.11. 2sc1161.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1161 DESCRIPTION ·With TO-66 package ·Low collector saturation voltage APPLICATIONS ·For low frequency high voltage power amplifier TV vertical deflection output applications. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 1 A PD Total power dissipation TC=25? 15 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1161 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 120 V

5.12. 2sc1172.pdf Size:115K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1172 DESCRIPTION Ў¤ With TO-3 package Ў¤ High breakdown voltage Ў¤ High speed switching APPLICATIONS Ў¤ For use in color TV horizontal output applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage IN Collector-emitter voltage Emitter-base voltage ANG CH EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE 1500 600 6 5 UNIT V V V A W Ўж Ўж Collector current Total power dissipation Junction temperature Storage temperature Tmb=25Ўж 50 150 -55~150

5.13. 2sc1195.pdf Size:113K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1195 DESCRIPTION Ў¤ With TO-3 package Ў¤ High power dissipation Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ For line operated audio output amplifier and switching power supply drivers applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER SEM GE HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Open emitter OND IC CONDITIONS TOR UC VALUE 200 200 5 2.5 UNIT V V V A W Ўж Ўж Open base Open collector Collector power dissipation Junction temperature Storage temperature TC=25Ўж 100 150 -55~150

5.14. 2sc1162.pdf Size:141K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1162 DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2SA715 APPLICATIONS Ў¤ For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute Maximun Ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM Collector-base voltage PARAMETER CONDITIONS ANG INCH Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature Collector-emitter voltage SEM E Open base Ta=25Ўж Open emitter OND IC TOR UC VALUE 35 35 5 2.5 3 0.75 UNIT V V V A A Open collector PC W TC=25Ўж 10 150 -55~150 Ўж Ўж Tj Tstg

5.15. 2sc1116.pdf Size:113K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1116 DESCRIPTION Ў¤ With TO-3 package Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For audio and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER SEM GE HAN INC Collector-emitter voltage Emitter-base voltage Collector current Collector-base voltage Open emitter OND IC CONDITIONS TOR UC VALUE 180 120 6 10 UNIT V V V A W Ўж Ўж Open base Open collector Collector power dissipation Junction temperature Storage temperature TC=25Ўж 100 150 -55~150

5.16. 2sc1185.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1185 DESCRIPTION ·With TO-3 package ·Wide area of safe operation ·High breakdown voltage :VCEO=250V(min) APPLICATIONS ·For voltage regulator,inverter,switching mode power supply applications. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 250 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 0.7 A PD Total power dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1185 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage

5.17. 2sc1173.pdf Size:123K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1173 DESCRIPTION Ў¤ With TO-220 package Ў¤ Complement to type 2SA473 Ў¤ Collector current :IC=3A Ў¤ Collector dissipation:PC=10W@TC=25Ўж APPLICATIONS Ў¤ Low frequency power amplifier Ў¤ Power regulator PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Junction temperature Storage temperature SEM GE Open base CONDITIONS Open emitter OND IC TOR UC VALUE 30 30 5 3 UNIT V V V A W Ўж Ўж Open collector Collector power dissipation TC=25Ўж 10 150 -55~150

5.18. 2sc1157.pdf Size:113K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1157 DESCRIPTION ·With TO-202 package ·High transition frequency ·Complement to type 2SA647 APPLICATIONS ·For power amplifier switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 110 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 0.8 A PC Collector power dissipation TC=25? 7 W Tj Junction temperature -40~150 ? Tstg Storage temperature -40~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1157 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=300mA IB=30m A 1.2 V VBEsat B

5.19. 2sc1170.pdf Size:115K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1170 DESCRIPTION Ў¤ With TO-3 package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg Collector-base voltage PARAMETER CONDITIONS ANG INCH Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Collector-emitter voltage EMIC ES Open base Open collector TC=25Ўж Open emitter DUC ON VALUE 1200 500 6 3.5 1.0 50 150 TOR UNIT V V V A A W Ўж Ўж -55~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 2.5 UNIT Ўж /W

5.20. 2sc1162.pdf Size:180K _lge

2SC1162(NPN) TO-126 Transistor TO-126 1. EMITTER 2. COLLECOTR 3. BASE 3 2 1 Features 2.500 7.400 Low frequency power amplifier 2.900 1.100 7.800 1.500 3.900 3.000 4.100 MAXIMUM RATINGS (TA=25? unless otherwise noted) 3.200 10.600 Symbol Parameter Value Units 0.000 11.000 0.300 VCBO Collector-Emitter Voltage 35 V VCEO Collector-Emitter Voltage 35 V 2.100 2.300 VEBO Emitter-Base Voltage 5 V 1.170 1.370 Dimensions in inches and (millimeters) IC Collector Current -Continuous 2.5 A 15.300 15.700 Pc Collector Power Dissipation 0.75 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? 0.660 0.860 ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) 0.450 0.600 2.290 TYP Parameter Symbol Test conditions MIN TYP MAX UNIT 4.480 4.680 Collector-base breakdown voltage V(BR)CBO IC =1mA,IE=0 35 V Collector-emitter breakdown voltage V(BR)CEO IC =10mA,IB=0 35 V Emitter-base breakdown voltage V(BR)EBO IE=1mA

See also transistors datasheet: 2SC110 , 2SC1100 , 2SC1101 , 2SC1102 , 2SC1103 , 2SC1103A , 2SC1104 , 2SC1105 , TIP41C , 2SC1107 , 2SC1108 , 2SC1109 , 2SC111 , 2SC1110 , 2SC1111 , 2SC1112 , 2SC1113 .

Keywords

2SC1106 Datasheet	2SC1106 Datenblatt	2SC1106 RoHS	2SC1106 Distributor
2SC1106 Application Notes	2SC1106 Component	2SC1106 Circuit	2SC1106 Schematic
2SC1106 Equivalent	2SC1106 Cross Reference	2SC1106 Data Sheet	2SC1106 Fiche Technique


	(C) 2005 All Right reserved	Bipolar \| \| MOSFET \| \| IGBT \| \| Manufacturer Sites \| \| SMD Code \| \| Packages \| \| Contact alltransistors[@]gmail.com