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2SC114
  2SC114
  2SC114
 
2SC114
  2SC114
  2SC114
 
2SC114
  2SC114
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU706DF
BU706F .. BULD38-1
BULD39D-1 .. BUV51
BUV52 .. BUX93
BUX94 .. CB1F4
CBCP68 .. CFC2026Y
CFC3852 .. CJF3055
CJF31C .. CN451
CN452 .. CS930
CS956 .. CSC1213AC
CSC1213AD .. CSD363R
CSD363Y .. D11C5F1
D11C702 .. D40CU7
D40CU8 .. D45H11FP
D45H12 .. DN200
DN200F .. DTA124T
DTA124TEA .. DTC144GSA
DTC144GUA .. E20237
E3-28 .. ECG382
ECG383 .. ESM2030DV
ESM2040D .. FCS9011F
FCS9011G .. FJX3009R
FJX3010R .. FMMT5401R
FMMT5447 .. FT5041
FT5415 .. GC300D
GC301 .. GES5137
GES5138 .. GME0404-1
GME0404-2 .. GT321V
GT322A .. HA9048
HA9049 .. HN4C06J
HN4C08J .. IDB595
IDB596 .. JE9012F
JE9012G .. KN3905S
KN3906 .. KRA751F
KRA751U .. KRC822U
KRC823E .. KSA916-O
KSA916-Y .. KSC2752
KSC2752-N .. KSD471
KSD471A .. KST24
KST2484 .. KT316B
KT316BM .. KT6115G
KT6115V .. KT8141B
KT8141G .. KT875V
KT876A .. KTA2014V
KTA2015 .. KTD1047B
KTD1145 .. MA889
MA890 .. MHQ4013
MHQ4014 .. MJD200
MJD200-1 .. MJE5180
MJE5181 .. MM5002
MM5005 .. MMBT5141
MMBT5142 .. MN19
MN21 .. MP4275
MP4276 .. MPS2221
MPS2221A .. MPSA28
MPSA29 .. MRF525
MRF531 .. NA02EY
NA02F .. NB012FJ
NB012FK .. NB211X
NB211XG .. NJD35N04
NJL0281D .. NPS4249
NPS4250 .. NST848BF3T5G
NST856BF3T5G .. OC701
OC702 .. PBSS4240DPN
PBSS4240T .. PEMH18
PEMH19 .. PN5139
PN5140 .. QSX3
QSX4 .. RN1412
RN1413 .. RN2506
RN2507 .. S0704
S1068 .. SD602
SD802 .. SGSF441
SGSF443 .. SRA2206
SRA2206E .. STC2073F
STC2073L .. SX3707
SX3708 .. TA1847
TA1860 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT1204
UMT13004 .. UN9115S
UN9116Q .. ZT203P
ZT204 .. ZTX3710K
ZTX3711 .. ZXTP2008Z
ZXTP2009Z .. ZXTPS720MC
 
2SC114 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SC114 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC114

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.75

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.2

Maksimalna temperatura (Tj), ¬įC: 150

Transition frequency (ft), MHz: 80

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 25

Noise Figure, dB: -

Package of 2SC114 transistor: TO5

2SC114 Equivalent Transistors - Cross-Reference Search

2SC114 PDF doc:

5.1. 2sc1169.pdf Size:63K _toshiba

2SC114
2SC114
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.2. 2sc1173.pdf Size:93K _toshiba

2SC114
2SC114
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.3. 2sc1162.pdf Size:29K _hitachi

2SC114
2SC114
2SC1162 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SA715 Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25įC) Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 5V Collector current IC 2.5 A Collector peak current IC(peak) 3A Collector power dissipation PC 0.75 W PC*1 10 W Junction temperature Tj 150 į C Storage temperature Tstg Ė55 to +150 į C Note: 1. Value at TC = 25į C. 2SC1162 Electrical Characteristics (Ta = 25įC) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 35 ó ó V IC = 1 mA, IE = 0 voltage Collector to emitter breakdown V(BR)CEO 35 ó ó V IC = 10 mA, RBE = ? voltage Emitter to base breakdown V(BR)EBO 5 ó ó V IE = 1 mA, IC = 0 voltage Collector cutoff current ICBO ó ó 20 Ķ A VCB = 35 V, IE = 0 DC current transfer ratio hFE*1 60 ó 320 VCE = 2 V, I

5.4. 2sc1122a.pdf Size:191K _no

2SC114
2SC114

5.5. 2sc1166.pdf Size:49K _no

2SC114
2SC114

5.6. 2sc1162.pdf Size:392K _secos

2SC114
2SC114
2SC1162 2.5A , 35V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of ‚Äú-C‚ÄĚ specifies halogen & lead-free FEATURES TO-126 ? Low frequency power amplifier ?Emitter ?Collector ?Base CLASSIFICATION OF hFE (1) Product-Rank 2SC1162-B 2SC1162-C 2SC1162-D A B E Range 60~120 100~200 160~320 F C N H L M K D J G Collector ? Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 7.40 7.80 H 1.10 1.50 ? B 2.50 2.90 J 0.45 0.60 C 10.60 11.00 K 0.66 0.86 Base D 15.30 15.70 L 2.10 2.30 E 3.70 3.90 M 1.17 1.37 ?? F 3.90 4.10 N 3.00 3.20 G 2.29 TYP. Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25¬įC unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 35 V Collector to Emitter Voltage VCEO 35 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 2.5 A Collector Power Dissipation PC 750 mW Junction, Storage Temperature TJ, TSTG 150, -55~150 ¬įC ELECTR

5.7. 2sc1172.pdf Size:69K _wingshing

2SC114
2SC114
NPN TRIPLE DIFFUSED 2SC1172 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS (No Damper Diode) TO-3 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 5 A Collector Dissipation (Tc=25? PC 50 W ? ? ? Junction Temperature Tj 150 ? ? ? ? ? Storage Temperature Tstg -50~150 ELECTRICAL CHARACTERISTICS (TA=25? ?) ? ? Characteristic Symbol Test Condition Min Typ Max Unit Collector- Emitter Cutoff Current(VBE=0) ICES VCE= 600 V , RBE=0 1.0 mA Collector Cutoff Current ICBO VCB= 800 V , IE=0 10 ĶA Emitter Cutoff Current IEBO VEB= 4V , IC=0 1.0 mA DC Current Gain hFE VCE= 5V , IC=1A 8 Collector- Emitter Saturation Voltage VCE(sat) IC= 4A , IB=1A 5.0 V Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276

5.8. 2sc1172.pdf Size:143K _jmnic

2SC114
2SC114
JMnic Product Specification Silicon NPN Power Transistors 2SC1172 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·High speed switching APPLICATIONS ·For use in color TV horizontal output applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 5 A PT Total power dissipation Tmb=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon NPN Power Transistors 2SC1172 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 600 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0

5.9. 2sc1106.pdf Size:142K _jmnic

2SC114
2SC114
JMnic Product Specification Silicon NPN Power Transistors 2SC1106 DESCRIPTION ·With TO-3 package ·High power dissipation ·High breakdown voltage APPLICATIONS ·For voltage regulator ,inverter and switching mode power supply applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 350 V VCEO Collector-emitter voltage Open base 250 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 2 A PC Collector power dissipation TC=25? 80 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon NPN Power Transistors 2SC1106 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 250 V V(BR)CBO Collector-base brea

5.10. 2sc1162.pdf Size:172K _jmnic

2SC114
2SC114
JMnic Product Specification Silicon NPN Power Transistors 2SC1162 DESCRIPTION · ·With TO-126 package ·Complement to type 2SA715 APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 35 V VCEO Collector-emitter voltage Open base 35 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 2.5 A ICM Collector current-peak 3 A Ta=25? 0.75 PC Collector power dissipation W TC=25? 10 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon NPN Power Transistors 2SC1162 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA IB=0 35 V V(BR)CBO Collector-base breakdown voltage IC=1mA

5.11. 2sc1195.pdf Size:142K _jmnic

2SC114
2SC114
JMnic Product Specification Silicon NPN Power Transistors 2SC1195 DESCRIPTION ·With TO-3 package ·High power dissipation ·Low collector saturation voltage APPLICATIONS ·For line operated audio output amplifier and switching power supply drivers applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 2.5 A PC Collector power dissipation TC=25? 100 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon NPN Power Transistors 2SC1195 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0 200 V V(BR)C

5.12. 2sc1173.pdf Size:154K _jmnic

2SC114
2SC114
JMnic Product Specification Silicon NPN Power Transistors 2SC1173 DESCRIPTION ·With TO-220 package ·Complement to type 2SA473 ·Collector current :IC=3A ·Collector dissipation:PC=10W@TC=25? APPLICATIONS ·Low frequency power amplifier ·Power regulator PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 30 V VCEO Collector-emitter voltage Open base 30 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 3 A PC Collector power dissipation TC=25? 10 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon NPN Power Transistors 2SC1173 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 30 V V(BR)CBO Collector-base breakd

5.13. 2sc1170.pdf Size:146K _jmnic

2SC114
2SC114
JMnic Product Specification Silicon NPN Power Transistors 2SC1170 DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1200 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 3.5 A IB Base current 1.0 A PC Collector power dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction case 2.5 ?/W JMnic Product Specification Silicon NPN Power Transistors 2SC1170 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS

5.14. 2sc1116.pdf Size:142K _jmnic

2SC114
2SC114
JMnic Product Specification Silicon NPN Power Transistors 2SC1116 DESCRIPTION ·With TO-3 package ·Wide area of safe operation APPLICATIONS ·For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 180 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 10 A PC Collector power dissipation TC=25? 100 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon NPN Power Transistors 2SC1116 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 120 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 180 V V(BR)EBO Emitter-base

5.15. 2sc1187.pdf Size:73K _usha

2SC114
2SC114
Transistors 2SC1187

5.16. 2sc1172.pdf Size:115K _inchange_semiconductor

2SC114
2SC114
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1172 DESCRIPTION Ў¤ With TO-3 package Ў¤ High breakdown voltage Ў¤ High speed switching APPLICATIONS Ў¤ For use in color TV horizontal output applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage IN Collector-emitter voltage Emitter-base voltage ANG CH EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE 1500 600 6 5 UNIT V V V A W Ўж Ўж Collector current Total power dissipation Junction temperature Storage temperature Tmb=25Ўж 50 150 -55~150

5.17. 2sc1161.pdf Size:127K _inchange_semiconductor

2SC114
2SC114
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1161 DESCRIPTION ·With TO-66 package ·Low collector saturation voltage APPLICATIONS ·For low frequency high voltage power amplifier TV vertical deflection output applications. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 1 A PD Total power dissipation TC=25? 15 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1161 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 120 V

5.18. 2sc1157.pdf Size:113K _inchange_semiconductor

2SC114
2SC114
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1157 DESCRIPTION ·With TO-202 package ·High transition frequency ·Complement to type 2SA647 APPLICATIONS ·For power amplifier switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 110 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 0.8 A PC Collector power dissipation TC=25? 7 W Tj Junction temperature -40~150 ? Tstg Storage temperature -40~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1157 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=300mA IB=30m A 1.2 V VBEsat B

5.19. 2sc1106.pdf Size:113K _inchange_semiconductor

2SC114
2SC114
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1106 DESCRIPTION Ў¤ With TO-3 package Ў¤ High power dissipation Ў¤ High breakdown voltage APPLICATIONS Ў¤ For voltage regulator ,inverter and switching mode power supply applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER SEM GE HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Open emitter OND IC CONDITIONS TOR UC VALUE 350 250 6 2 UNIT V V V A W Ўж Ўж Open base Open collector Collector power dissipation Junction temperature Storage temperature TC=25Ўж 80 150 -55~150

5.20. 2sc1162.pdf Size:141K _inchange_semiconductor

2SC114
2SC114
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1162 DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2SA715 APPLICATIONS Ў¤ For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute Maximun Ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM Collector-base voltage PARAMETER CONDITIONS ANG INCH Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature Collector-emitter voltage SEM E Open base Ta=25Ўж Open emitter OND IC TOR UC VALUE 35 35 5 2.5 3 0.75 UNIT V V V A A Open collector PC W TC=25Ўж 10 150 -55~150 Ўж Ўж Tj Tstg

5.21. 2sc1185.pdf Size:127K _inchange_semiconductor

2SC114
2SC114
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1185 DESCRIPTION ·With TO-3 package ·Wide area of safe operation ·High breakdown voltage :VCEO=250V(min) APPLICATIONS ·For voltage regulator,inverter,switching mode power supply applications. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 250 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 0.7 A PD Total power dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1185 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage

5.22. 2sc1163.pdf Size:113K _inchange_semiconductor

2SC114
2SC114
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1163 DESCRIPTION · ·With TO-126 package ·High power dissipation APPLICATIONS ·Useful for high-voltage general purpose applications ·Suitable for transformerless ,line-operated equipment PINNING (see Fig.2) PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 4 V IC Collector current 0.1 A PD Total power dissipation TC=25? 20.8 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-C Thermal resistance junction to case 6.25 ?/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1163 CHARACTERISTICS Tj=25? unless otherwise specifi

5.23. 2sc1195.pdf Size:113K _inchange_semiconductor

2SC114
2SC114
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1195 DESCRIPTION Ў¤ With TO-3 package Ў¤ High power dissipation Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ For line operated audio output amplifier and switching power supply drivers applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER SEM GE HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Open emitter OND IC CONDITIONS TOR UC VALUE 200 200 5 2.5 UNIT V V V A W Ўж Ўж Open base Open collector Collector power dissipation Junction temperature Storage temperature TC=25Ўж 100 150 -55~150

5.24. 2sc1173.pdf Size:123K _inchange_semiconductor

2SC114
2SC114
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1173 DESCRIPTION Ў¤ With TO-220 package Ў¤ Complement to type 2SA473 Ў¤ Collector current :IC=3A Ў¤ Collector dissipation:PC=10W@TC=25Ўж APPLICATIONS Ў¤ Low frequency power amplifier Ў¤ Power regulator PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Junction temperature Storage temperature SEM GE Open base CONDITIONS Open emitter OND IC TOR UC VALUE 30 30 5 3 UNIT V V V A W Ўж Ўж Open collector Collector power dissipation TC=25Ўж 10 150 -55~150

5.25. 2sc1170.pdf Size:115K _inchange_semiconductor

2SC114
2SC114
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1170 DESCRIPTION Ў¤ With TO-3 package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg Collector-base voltage PARAMETER CONDITIONS ANG INCH Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Collector-emitter voltage EMIC ES Open base Open collector TC=25Ўж Open emitter DUC ON VALUE 1200 500 6 3.5 1.0 50 150 TOR UNIT V V V A A W Ўж Ўж -55~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 2.5 UNIT Ўж /W

5.26. 2sc1170a.pdf Size:129K _inchange_semiconductor

2SC114
2SC114
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1170A DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1400 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 3.5 A IB Base current 1.0 A PC Collector power dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction case 2.5 ?/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1170A CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CO

5.27. 2sc1116.pdf Size:113K _inchange_semiconductor

2SC114
2SC114
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1116 DESCRIPTION Ў¤ With TO-3 package Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For audio and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER SEM GE HAN INC Collector-emitter voltage Emitter-base voltage Collector current Collector-base voltage Open emitter OND IC CONDITIONS TOR UC VALUE 180 120 6 10 UNIT V V V A W Ўж Ўж Open base Open collector Collector power dissipation Junction temperature Storage temperature TC=25Ўж 100 150 -55~150

5.28. 2sc1162.pdf Size:180K _lge

2SC114
2SC114
2SC1162(NPN) TO-126 Transistor TO-126 1. EMITTER 2. COLLECOTR 3. BASE 3 2 1 Features 2.500 7.400 Low frequency power amplifier 2.900 1.100 7.800 1.500 3.900 3.000 4.100 MAXIMUM RATINGS (TA=25? unless otherwise noted) 3.200 10.600 Symbol Parameter Value Units 0.000 11.000 0.300 VCBO Collector-Emitter Voltage 35 V VCEO Collector-Emitter Voltage 35 V 2.100 2.300 VEBO Emitter-Base Voltage 5 V 1.170 1.370 Dimensions in inches and (millimeters) IC Collector Current -Continuous 2.5 A 15.300 15.700 Pc Collector Power Dissipation 0.75 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? 0.660 0.860 ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) 0.450 0.600 2.290 TYP Parameter Symbol Test conditions MIN TYP MAX UNIT 4.480 4.680 Collector-base breakdown voltage V(BR)CBO IC =1mA,IE=0 35 V Collector-emitter breakdown voltage V(BR)CEO IC =10mA,IB=0 35 V Emitter-base breakdown voltage V(BR)EBO IE=1mA

See also transistors datasheet: 2SC1130 , 2SC1131 , 2SC1132 , 2SC1133 , 2SC1134 , 2SC1136 , 2SC1138 , 2SC1139 , 2N3866 , 2SC1140 , 2SC1141 , 2SC1142 , 2SC1143 , 2SC1144 , 2SC1145 , 2SC115 , 2SC1150 .

Keywords

 2SC114 Datasheet  2SC114 Datenblatt  2SC114 RoHS  2SC114 Distributor
 2SC114 Application Notes  2SC114 Component  2SC114 Circuit  2SC114 Schematic
 2SC114 Equivalent  2SC114 Cross Reference  2SC114 Data Sheet  2SC114 Fiche Technique

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