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2SC114
  2SC114
  2SC114
 
2SC114
  2SC114
  2SC114
 
2SC114
  2SC114
 
 
List
100DA025D .. 2N100
2N1000 .. 2N119
2N1190 .. 2N1412A
2N1413 .. 2N1655
2N1656 .. 2N1990R
2N1990S .. 2N2221A
2N2221ACSM .. 2N2484ACSM
2N2484ADCSM .. 2N2773
2N2774 .. 2N2970
2N2971 .. 2N3241A
2N3242 .. 2N3506
2N3506L .. 2N3791SM
2N3792 .. 2N4057
2N4058 .. 2N457A
2N457B .. 2N5101
2N5102 .. 2N5356
2N5357 .. 2N5704
2N5705 .. 2N6022
2N6024 .. 2N634A
2N635 .. 2N6655-2
2N6655A .. 2N819
2N82 .. 2S120
2S121 .. 2SA1079
2SA108 .. 2SA1282
2SA1282A .. 2SA1408R
2SA1409 .. 2SA1577W
2SA1578 .. 2SA183
2SA1830 .. 2SA249
2SA25 .. 2SA496Y
2SA497 .. 2SA725
2SA726 .. 2SA927
2SA928 .. 2SB1102
2SB1103 .. 2SB1261
2SB1261-Z .. 2SB1555B
2SB1555C .. 2SB311
2SB312 .. 2SB511F
2SB512 .. 2SB696K
2SB697 .. 2SB858C
2SB858D .. 2SC1044
2SC1045 .. 2SC1253
2SC1254 .. 2SC1469A
2SC146A .. 2SC169
2SC1698 .. 2SC1924
2SC1925 .. 2SC2196
2SC2197 .. 2SC24
2SC240 .. 2SC2630
2SC2631 .. 2SC2821
2SC2821E .. 2SC306
2SC3060 .. 2SC3262
2SC3263 .. 2SC3443
2SC3444 .. 2SC3617
2SC3618 .. 2SC3780C
2SC3780D .. 2SC3981
2SC3982 .. 2SC4163L
2SC4163M .. 2SC4422
2SC4423 .. 2SC4725
2SC4726 .. 2SC5031N
2SC5031O .. 2SC5323
2SC5324 .. 2SC569
2SC5690 .. 2SC647P
2SC648 .. 2SC847
2SC848 .. 2SD1020G
2SD1020O .. 2SD1218
2SD1219 .. 2SD1402O
2SD1403 .. 2SD1618E
2SD1618S .. 2SD1803
2SD1803Q .. 2SD2017
2SD2018 .. 2SD2342B
2SD2342C .. 2SD313E
2SD313F .. 2SD532
2SD533 .. 2SD732
2SD732K .. 2SD931
2SD932 .. 3DD5024P
3DD5032 .. 40412V2
40413 .. 9013F
9013G .. AC180KL
AC180L .. AD462
AD463 .. AM1011-075
AM1011-300 .. BC107CSM
BC107P .. BC206C
BC207 .. BC307C
BC307VI .. BC418VI
BC419 .. BC558A
BC558AP .. BC848CW
BC848CWT1 .. BCP628C
BCP669A .. BCW66KG
BCW66KH .. BCX78-10
BCX78-7 .. BD149
BD149-10 .. BD281
BD282 .. BD515
BD515-1 .. BD814A
BD815 .. BDT60AF
BDT60B .. BDX37
BDX40 .. BF118
BF119 .. BF345
BF355 .. BF642
BF642P .. BFN23R
BFN24 .. BFR81
BFR81TO5 .. BFV10
BFV11 .. BFX79
BFX80 .. BLW46
BLW47 .. BSP52
BSP52T1 .. BSW21
BSW21A .. BT2604
BT2604T .. BTN2222AL3
BTN2222AN3 .. BU526A-7
BU526A-8 .. BUL704
BUL705 .. BUV46
BUV46A .. BUX82-5
BUX82-6 .. C9083
C9084 .. CENU52
CENU55 .. CJD340
CJD3439 .. CMPTA13
CMPTA14 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM5
D44VM6 .. DH3724CN
DH3725CD .. DTA123EE
DTA123EEA .. DTC143TEA
DTC143TKA .. DXTP03200BP5
DXTP19020DP5 .. ECG344
ECG345 .. ES3126
ESM1000 .. FA1L3N
FA1L4L .. FJPF13009
FJPF3305 .. FMMT5088
FMMT5089 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34-15
GFT34-30 .. GT2765
GT2766 .. HA7507
HA7510 .. HMBT2222A
HMBT2369 .. HUN2115
HUN2116 .. JA101P
JA101Q .. KD338
KD3442 .. KRA557F
KRA557U .. KRC416
KRC416E .. KSA1241O
KSA1241Y .. KSC2223Y
KSC2233 .. KSC945L
KSC945O .. KSP25
KSP26 .. KT3128B-1
KT3128B1 .. KT501V
KT502A .. KT808A
KT808A3 .. KT837A
KT837A1-IM .. KT997B
KT999A .. KTC3883
KTC3911 .. L8550HQLT1G
L8550HRLT1G .. MA8001
MA8002 .. MHQ2221
MHQ2222 .. MJD117L
MJD117T4 .. MJE488
MJE49 .. MM4429
MM4430 .. MMBT5127
MMBT5128 .. MMUN2214L
MMUN2215 .. MP4051
MP4052 .. MPQ5857
MPQ5858 .. MPS918R
MPS929 .. MRF449
MRF450 .. NA01EH
NA01EI .. NB011FV
NB011FY .. NB123H
NB123HH .. NB323Y
NB323Z .. NPS3707
NPS3708 .. NSS35200CF8T1G
NSS35200MR6T1G .. OC450
OC450K .. PBSS304NX
PBSS304NZ .. PEMB10
PEMB11 .. PN3906
PN3906R .. PZT5401
PZT5551 .. RN1116MFV
RN1117 .. RN2302
RN2303 .. RS7241
RS7406 .. SCE308
SCE309 .. SFT288
SFT298 .. SPS6012
SPS8050 .. ST2SB772U
ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
TEC9013H .. TIP50J3
TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
2SC114 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SC114 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC114

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.75

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.2

Maksimalna temperatura (Tj), ¬įC: 150

Transition frequency (ft), MHz: 80

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 25

Noise Figure, dB: -

Package of 2SC114 transistor: TO5

2SC114 Equivalent Transistors - Cross-Reference Search

2SC114 PDF doc:

5.1. 2sc1169.pdf Size:63K _toshiba

2SC114
2SC114
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.2. 2sc1173.pdf Size:93K _toshiba

2SC114
2SC114
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.3. 2sc1162.pdf Size:29K _hitachi

2SC114
2SC114
2SC1162 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SA715 Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25įC) Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 5V Collector current IC 2.5 A Collector peak current IC(peak) 3A Collector power dissipation PC 0.75 W PC*1 10 W Junction temperature Tj 150 į C Storage temperature Tstg Ė55 to +150 į C Note: 1. Value at TC = 25į C. 2SC1162 Electrical Characteristics (Ta = 25įC) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 35 ó ó V IC = 1 mA, IE = 0 voltage Collector to emitter breakdown V(BR)CEO 35 ó ó V IC = 10 mA, RBE = ? voltage Emitter to base breakdown V(BR)EBO 5 ó ó V IE = 1 mA, IC = 0 voltage Collector cutoff current ICBO ó ó 20 Ķ A VCB = 35 V, IE = 0 DC current transfer ratio hFE*1 60 ó 320 VCE = 2 V, I

5.4. 2sc1122a.pdf Size:191K _no

2SC114
2SC114

5.5. 2sc1166.pdf Size:49K _no

2SC114
2SC114

5.6. 2sc1162.pdf Size:392K _secos

2SC114
2SC114
2SC1162 2.5A , 35V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of ‚Äú-C‚ÄĚ specifies halogen & lead-free FEATURES TO-126 ? Low frequency power amplifier ?Emitter ?Collector ?Base CLASSIFICATION OF hFE (1) Product-Rank 2SC1162-B 2SC1162-C 2SC1162-D A B E Range 60~120 100~200 160~320 F C N H L M K D J G Collector ? Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 7.40 7.80 H 1.10 1.50 ? B 2.50 2.90 J 0.45 0.60 C 10.60 11.00 K 0.66 0.86 Base D 15.30 15.70 L 2.10 2.30 E 3.70 3.90 M 1.17 1.37 ?? F 3.90 4.10 N 3.00 3.20 G 2.29 TYP. Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25¬įC unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 35 V Collector to Emitter Voltage VCEO 35 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 2.5 A Collector Power Dissipation PC 750 mW Junction, Storage Temperature TJ, TSTG 150, -55~150 ¬įC ELECTR

5.7. 2sc1172.pdf Size:69K _wingshing

2SC114
2SC114
NPN TRIPLE DIFFUSED 2SC1172 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS (No Damper Diode) TO-3 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 5 A Collector Dissipation (Tc=25? PC 50 W ? ? ? Junction Temperature Tj 150 ? ? ? ? ? Storage Temperature Tstg -50~150 ELECTRICAL CHARACTERISTICS (TA=25? ?) ? ? Characteristic Symbol Test Condition Min Typ Max Unit Collector- Emitter Cutoff Current(VBE=0) ICES VCE= 600 V , RBE=0 1.0 mA Collector Cutoff Current ICBO VCB= 800 V , IE=0 10 ĶA Emitter Cutoff Current IEBO VEB= 4V , IC=0 1.0 mA DC Current Gain hFE VCE= 5V , IC=1A 8 Collector- Emitter Saturation Voltage VCE(sat) IC= 4A , IB=1A 5.0 V Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276

5.8. 2sc1172.pdf Size:143K _jmnic

2SC114
2SC114
JMnic Product Specification Silicon NPN Power Transistors 2SC1172 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·High speed switching APPLICATIONS ·For use in color TV horizontal output applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 5 A PT Total power dissipation Tmb=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon NPN Power Transistors 2SC1172 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 600 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0

5.9. 2sc1106.pdf Size:142K _jmnic

2SC114
2SC114
JMnic Product Specification Silicon NPN Power Transistors 2SC1106 DESCRIPTION ·With TO-3 package ·High power dissipation ·High breakdown voltage APPLICATIONS ·For voltage regulator ,inverter and switching mode power supply applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 350 V VCEO Collector-emitter voltage Open base 250 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 2 A PC Collector power dissipation TC=25? 80 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon NPN Power Transistors 2SC1106 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 250 V V(BR)CBO Collector-base brea

5.10. 2sc1170.pdf Size:146K _jmnic

2SC114
2SC114
JMnic Product Specification Silicon NPN Power Transistors 2SC1170 DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1200 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 3.5 A IB Base current 1.0 A PC Collector power dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction case 2.5 ?/W JMnic Product Specification Silicon NPN Power Transistors 2SC1170 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS

5.11. 2sc1116.pdf Size:142K _jmnic

2SC114
2SC114
JMnic Product Specification Silicon NPN Power Transistors 2SC1116 DESCRIPTION ·With TO-3 package ·Wide area of safe operation APPLICATIONS ·For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 180 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 10 A PC Collector power dissipation TC=25? 100 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon NPN Power Transistors 2SC1116 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 120 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 180 V V(BR)EBO Emitter-base

5.12. 2sc1162.pdf Size:172K _jmnic

2SC114
2SC114
JMnic Product Specification Silicon NPN Power Transistors 2SC1162 DESCRIPTION · ·With TO-126 package ·Complement to type 2SA715 APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 35 V VCEO Collector-emitter voltage Open base 35 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 2.5 A ICM Collector current-peak 3 A Ta=25? 0.75 PC Collector power dissipation W TC=25? 10 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon NPN Power Transistors 2SC1162 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA IB=0 35 V V(BR)CBO Collector-base breakdown voltage IC=1mA

5.13. 2sc1195.pdf Size:142K _jmnic

2SC114
2SC114
JMnic Product Specification Silicon NPN Power Transistors 2SC1195 DESCRIPTION ·With TO-3 package ·High power dissipation ·Low collector saturation voltage APPLICATIONS ·For line operated audio output amplifier and switching power supply drivers applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 2.5 A PC Collector power dissipation TC=25? 100 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon NPN Power Transistors 2SC1195 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0 200 V V(BR)C

5.14. 2sc1173.pdf Size:154K _jmnic

2SC114
2SC114
JMnic Product Specification Silicon NPN Power Transistors 2SC1173 DESCRIPTION ·With TO-220 package ·Complement to type 2SA473 ·Collector current :IC=3A ·Collector dissipation:PC=10W@TC=25? APPLICATIONS ·Low frequency power amplifier ·Power regulator PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 30 V VCEO Collector-emitter voltage Open base 30 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 3 A PC Collector power dissipation TC=25? 10 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon NPN Power Transistors 2SC1173 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 30 V V(BR)CBO Collector-base breakd

5.15. 2sc1187.pdf Size:73K _usha

2SC114
2SC114
Transistors 2SC1187

5.16. 2sc1172.pdf Size:115K _inchange_semiconductor

2SC114
2SC114
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1172 DESCRIPTION Ў¤ With TO-3 package Ў¤ High breakdown voltage Ў¤ High speed switching APPLICATIONS Ў¤ For use in color TV horizontal output applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage IN Collector-emitter voltage Emitter-base voltage ANG CH EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE 1500 600 6 5 UNIT V V V A W Ўж Ўж Collector current Total power dissipation Junction temperature Storage temperature Tmb=25Ўж 50 150 -55~150

5.17. 2sc1106.pdf Size:113K _inchange_semiconductor

2SC114
2SC114
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1106 DESCRIPTION Ў¤ With TO-3 package Ў¤ High power dissipation Ў¤ High breakdown voltage APPLICATIONS Ў¤ For voltage regulator ,inverter and switching mode power supply applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER SEM GE HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Open emitter OND IC CONDITIONS TOR UC VALUE 350 250 6 2 UNIT V V V A W Ўж Ўж Open base Open collector Collector power dissipation Junction temperature Storage temperature TC=25Ўж 80 150 -55~150

5.18. 2sc1170.pdf Size:115K _inchange_semiconductor

2SC114
2SC114
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1170 DESCRIPTION Ў¤ With TO-3 package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg Collector-base voltage PARAMETER CONDITIONS ANG INCH Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Collector-emitter voltage EMIC ES Open base Open collector TC=25Ўж Open emitter DUC ON VALUE 1200 500 6 3.5 1.0 50 150 TOR UNIT V V V A A W Ўж Ўж -55~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 2.5 UNIT Ўж /W

5.19. 2sc1116.pdf Size:113K _inchange_semiconductor

2SC114
2SC114
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1116 DESCRIPTION Ў¤ With TO-3 package Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For audio and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER SEM GE HAN INC Collector-emitter voltage Emitter-base voltage Collector current Collector-base voltage Open emitter OND IC CONDITIONS TOR UC VALUE 180 120 6 10 UNIT V V V A W Ўж Ўж Open base Open collector Collector power dissipation Junction temperature Storage temperature TC=25Ўж 100 150 -55~150

5.20. 2sc1163.pdf Size:113K _inchange_semiconductor

2SC114
2SC114
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1163 DESCRIPTION · ·With TO-126 package ·High power dissipation APPLICATIONS ·Useful for high-voltage general purpose applications ·Suitable for transformerless ,line-operated equipment PINNING (see Fig.2) PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 4 V IC Collector current 0.1 A PD Total power dissipation TC=25? 20.8 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-C Thermal resistance junction to case 6.25 ?/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1163 CHARACTERISTICS Tj=25? unless otherwise specifi

5.21. 2sc1162.pdf Size:141K _inchange_semiconductor

2SC114
2SC114
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1162 DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2SA715 APPLICATIONS Ў¤ For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute Maximun Ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM Collector-base voltage PARAMETER CONDITIONS ANG INCH Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature Collector-emitter voltage SEM E Open base Ta=25Ўж Open emitter OND IC TOR UC VALUE 35 35 5 2.5 3 0.75 UNIT V V V A A Open collector PC W TC=25Ўж 10 150 -55~150 Ўж Ўж Tj Tstg

5.22. 2sc1185.pdf Size:127K _inchange_semiconductor

2SC114
2SC114
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1185 DESCRIPTION ·With TO-3 package ·Wide area of safe operation ·High breakdown voltage :VCEO=250V(min) APPLICATIONS ·For voltage regulator,inverter,switching mode power supply applications. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 250 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 0.7 A PD Total power dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1185 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage

5.23. 2sc1170a.pdf Size:129K _inchange_semiconductor

2SC114
2SC114
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1170A DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1400 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 3.5 A IB Base current 1.0 A PC Collector power dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction case 2.5 ?/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1170A CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CO

5.24. 2sc1195.pdf Size:113K _inchange_semiconductor

2SC114
2SC114
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1195 DESCRIPTION Ў¤ With TO-3 package Ў¤ High power dissipation Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ For line operated audio output amplifier and switching power supply drivers applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER SEM GE HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Open emitter OND IC CONDITIONS TOR UC VALUE 200 200 5 2.5 UNIT V V V A W Ўж Ўж Open base Open collector Collector power dissipation Junction temperature Storage temperature TC=25Ўж 100 150 -55~150

5.25. 2sc1157.pdf Size:113K _inchange_semiconductor

2SC114
2SC114
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1157 DESCRIPTION ·With TO-202 package ·High transition frequency ·Complement to type 2SA647 APPLICATIONS ·For power amplifier switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 110 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 0.8 A PC Collector power dissipation TC=25? 7 W Tj Junction temperature -40~150 ? Tstg Storage temperature -40~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1157 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=300mA IB=30m A 1.2 V VBEsat B

5.26. 2sc1161.pdf Size:127K _inchange_semiconductor

2SC114
2SC114
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1161 DESCRIPTION ·With TO-66 package ·Low collector saturation voltage APPLICATIONS ·For low frequency high voltage power amplifier TV vertical deflection output applications. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 1 A PD Total power dissipation TC=25? 15 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1161 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 120 V

5.27. 2sc1173.pdf Size:123K _inchange_semiconductor

2SC114
2SC114
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1173 DESCRIPTION Ў¤ With TO-220 package Ў¤ Complement to type 2SA473 Ў¤ Collector current :IC=3A Ў¤ Collector dissipation:PC=10W@TC=25Ўж APPLICATIONS Ў¤ Low frequency power amplifier Ў¤ Power regulator PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Junction temperature Storage temperature SEM GE Open base CONDITIONS Open emitter OND IC TOR UC VALUE 30 30 5 3 UNIT V V V A W Ўж Ўж Open collector Collector power dissipation TC=25Ўж 10 150 -55~150

5.28. 2sc1162.pdf Size:180K _lge

2SC114
2SC114
2SC1162(NPN) TO-126 Transistor TO-126 1. EMITTER 2. COLLECOTR 3. BASE 3 2 1 Features 2.500 7.400 Low frequency power amplifier 2.900 1.100 7.800 1.500 3.900 3.000 4.100 MAXIMUM RATINGS (TA=25? unless otherwise noted) 3.200 10.600 Symbol Parameter Value Units 0.000 11.000 0.300 VCBO Collector-Emitter Voltage 35 V VCEO Collector-Emitter Voltage 35 V 2.100 2.300 VEBO Emitter-Base Voltage 5 V 1.170 1.370 Dimensions in inches and (millimeters) IC Collector Current -Continuous 2.5 A 15.300 15.700 Pc Collector Power Dissipation 0.75 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? 0.660 0.860 ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) 0.450 0.600 2.290 TYP Parameter Symbol Test conditions MIN TYP MAX UNIT 4.480 4.680 Collector-base breakdown voltage V(BR)CBO IC =1mA,IE=0 35 V Collector-emitter breakdown voltage V(BR)CEO IC =10mA,IB=0 35 V Emitter-base breakdown voltage V(BR)EBO IE=1mA

See also transistors datasheet: 2SC1130 , 2SC1131 , 2SC1132 , 2SC1133 , 2SC1134 , 2SC1136 , 2SC1138 , 2SC1139 , 2N3866 , 2SC1140 , 2SC1141 , 2SC1142 , 2SC1143 , 2SC1144 , 2SC1145 , 2SC115 , 2SC1150 .

Keywords

 2SC114 Datasheet  2SC114 Datenblatt  2SC114 RoHS  2SC114 Distributor
 2SC114 Application Notes  2SC114 Component  2SC114 Circuit  2SC114 Schematic
 2SC114 Equivalent  2SC114 Cross Reference  2SC114 Data Sheet  2SC114 Fiche Technique

 

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