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2SC1161
  2SC1161
  2SC1161
 
2SC1161
  2SC1161
  2SC1161
 
2SC1161
  2SC1161
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BU109
BU109D .. BU930P
BU930Z .. BUPD1520
BUR10 .. BUW13AF
BUW13AW .. BUY38-5
BUY38-6 .. CD13003D
CD13005 .. CG126A
CG126B .. CK66
CK66A .. CP701
CP702 .. CSA1943F
CSA1943FO .. CSC1845P
CSC1845U .. CSD794Y
CSD811 .. D26P3
D27C1 .. D40P2
D40P3 .. D60T5040
D60T5050 .. DSS4160U
DSS4160V .. DTA144EE
DTA144EEA .. DTD163TV
DTD513ZE .. ECG18
ECG180 .. ECG62
ECG63 .. ESM4045AV
ESM4045DV .. FCX493
FCX495 .. FJY4014R
FJYF2906 .. FMMTA20
FMMTA20R .. FX4207
FX4960 .. GD150
GD151 .. GES5828
GES5828A .. GS121D
GS122 .. GT400/10C
GT400/10D .. HEPG0011
HEPS0005 .. HS6015
HS6016 .. IMB4A
IMB5A .. JE9123B
JE9123C .. KRA108S
KRA109 .. KRC101S
KRC102 .. KRC851E
KRC851F .. KSB1149-Y
KSB1150 .. KSC3074
KSC3074-O .. KSD560-R
KSD560-Y .. KT201BM
KT201D .. KT333E-3
KT333G-3 .. KT626D
KT626G .. KT8158V
KT8159A .. KT909V
KT9101AC .. KTC1003
KTC1006 .. KTN2222AU
KTN2222S .. MCH4014
MCH4015 .. MJ11014
MJ11015 .. MJD50
MJD50-1 .. MJE700
MJE700T .. MMBC1622D7
MMBC1622D8 .. MMBT8099L
MMBT8598 .. MP1529
MP1529A .. MP5140
MP5141 .. MPS3403
MPS3404 .. MPSH83
MPSH85 .. MRF965
MSA1162 .. NA12HJ
NA12HX .. NB014EU
NB014EV .. NB212YX
NB212YY .. NKT154-26
NKT162 .. NPS5910
NPS6076 .. NTE2340
NTE2341 .. OC83N
OC84 .. PBSS5440D
PBSS5480X .. PMBT5551
PMBT6428 .. PT518
PT519 .. RCA1E03
RCA29 .. RN1706JE
RN1707 .. RN2904AFS
RN2904FE .. S1864
S1891 .. SE2001
SE2002 .. SK3040
SK3054 .. SRC1201U
SRC1201UF .. STC945
STD03N .. T0004
T0005 .. TA2800
TA2871 .. TIP161
TIP162 .. TIS63
TIS64 .. TN4257
TN4258 .. TPCP8511
TPCP8601 .. UN111E
UN111F .. UNR1119
UNR111D .. ZT706
ZT706A .. ZTX501K
ZTX501L .. ZXTPS720MC
 
2SC1161 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SC1161 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC1161

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 15

Maximum collector-base voltage |Ucb|, V: 200

Maximum collector-emitter voltage |Uce|, V: 120

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 1

Maksimalna temperatura (Tj), °C: 200

Transition frequency (ft), MHz: 10

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 30

Noise Figure, dB: -

Package of 2SC1161 transistor: TO66

2SC1161 Equivalent Transistors - Cross-Reference Search

2SC1161 PDF doc:

1.1. 2sc1161.pdf Size:127K _inchange_semiconductor

2SC1161
2SC1161
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1161 DESCRIPTION ·With TO-66 package ·Low collector saturation voltage APPLICATIONS ·For low frequency high voltage power amplifier TV vertical deflection output applications. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 1 A PD Total power dissipation TC=25? 15 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1161 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 120 V

4.1. 2sc1169.pdf Size:63K _toshiba

2SC1161
2SC1161
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

4.2. 2sc1162.pdf Size:29K _hitachi

2SC1161
2SC1161
2SC1162 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SA715 Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 5V Collector current IC 2.5 A Collector peak current IC(peak) 3A Collector power dissipation PC 0.75 W PC*1 10 W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Note: 1. Value at TC = 25 C. 2SC1162 Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 35 V IC = 1 mA, IE = 0 voltage Collector to emitter breakdown V(BR)CEO 35 V IC = 10 mA, RBE = ? voltage Emitter to base breakdown V(BR)EBO 5 V IE = 1 mA, IC = 0 voltage Collector cutoff current ICBO 20 A VCB = 35 V, IE = 0 DC current transfer ratio hFE*1 60 320 VCE = 2 V, I

4.3. 2sc1166.pdf Size:49K _no

2SC1161
2SC1161

4.4. 2sc1162.pdf Size:392K _secos

2SC1161
2SC1161
2SC1162 2.5A , 35V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-126 ? Low frequency power amplifier ?Emitter ?Collector ?Base CLASSIFICATION OF hFE (1) Product-Rank 2SC1162-B 2SC1162-C 2SC1162-D A B E Range 60~120 100~200 160~320 F C N H L M K D J G Collector ? Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 7.40 7.80 H 1.10 1.50 ? B 2.50 2.90 J 0.45 0.60 C 10.60 11.00 K 0.66 0.86 Base D 15.30 15.70 L 2.10 2.30 E 3.70 3.90 M 1.17 1.37 ?? F 3.90 4.10 N 3.00 3.20 G 2.29 TYP. Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 35 V Collector to Emitter Voltage VCEO 35 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 2.5 A Collector Power Dissipation PC 750 mW Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTR

4.5. 2sc1162.pdf Size:172K _jmnic

2SC1161
2SC1161
JMnic Product Specification Silicon NPN Power Transistors 2SC1162 DESCRIPTION · ·With TO-126 package ·Complement to type 2SA715 APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 35 V VCEO Collector-emitter voltage Open base 35 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 2.5 A ICM Collector current-peak 3 A Ta=25? 0.75 PC Collector power dissipation W TC=25? 10 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon NPN Power Transistors 2SC1162 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA IB=0 35 V V(BR)CBO Collector-base breakdown voltage IC=1mA

4.6. 2sc1162.pdf Size:141K _inchange_semiconductor

2SC1161
2SC1161
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1162 DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2SA715 APPLICATIONS Ў¤ For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute Maximun Ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM Collector-base voltage PARAMETER CONDITIONS ANG INCH Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature Collector-emitter voltage SEM E Open base Ta=25Ўж Open emitter OND IC TOR UC VALUE 35 35 5 2.5 3 0.75 UNIT V V V A A Open collector PC W TC=25Ўж 10 150 -55~150 Ўж Ўж Tj Tstg

4.7. 2sc1163.pdf Size:113K _inchange_semiconductor

2SC1161
2SC1161
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1163 DESCRIPTION · ·With TO-126 package ·High power dissipation APPLICATIONS ·Useful for high-voltage general purpose applications ·Suitable for transformerless ,line-operated equipment PINNING (see Fig.2) PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 4 V IC Collector current 0.1 A PD Total power dissipation TC=25? 20.8 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-C Thermal resistance junction to case 6.25 ?/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1163 CHARACTERISTICS Tj=25? unless otherwise specifi

4.8. 2sc1162.pdf Size:180K _lge

2SC1161
2SC1161
2SC1162(NPN) TO-126 Transistor TO-126 1. EMITTER 2. COLLECOTR 3. BASE 3 2 1 Features 2.500 7.400 Low frequency power amplifier 2.900 1.100 7.800 1.500 3.900 3.000 4.100 MAXIMUM RATINGS (TA=25? unless otherwise noted) 3.200 10.600 Symbol Parameter Value Units 0.000 11.000 0.300 VCBO Collector-Emitter Voltage 35 V VCEO Collector-Emitter Voltage 35 V 2.100 2.300 VEBO Emitter-Base Voltage 5 V 1.170 1.370 Dimensions in inches and (millimeters) IC Collector Current -Continuous 2.5 A 15.300 15.700 Pc Collector Power Dissipation 0.75 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? 0.660 0.860 ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) 0.450 0.600 2.290 TYP Parameter Symbol Test conditions MIN TYP MAX UNIT 4.480 4.680 Collector-base breakdown voltage V(BR)CBO IC =1mA,IE=0 35 V Collector-emitter breakdown voltage V(BR)CEO IC =10mA,IB=0 35 V Emitter-base breakdown voltage V(BR)EBO IE=1mA

See also transistors datasheet: 2SC1154 , 2SC1155 , 2SC1156 , 2SC1157 , 2SC1158 , 2SC1159 , 2SC116 , 2SC1160 , BD139 , 2SC1161A , 2SC1162 , 2SC1162B , 2SC1162C , 2SC1162D , 2SC1162WT , 2SC1163 , 2SC1164 .

Keywords

 2SC1161 Datasheet  2SC1161 Datenblatt  2SC1161 RoHS  2SC1161 Distributor
 2SC1161 Application Notes  2SC1161 Component  2SC1161 Circuit  2SC1161 Schematic
 2SC1161 Equivalent  2SC1161 Cross Reference  2SC1161 Data Sheet  2SC1161 Fiche Technique

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