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2SC1215S
Transistor Datasheet. Parameters and Characteristics. Type Designator: 2SC1215S
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.2
Maximum collector-base voltage |Ucb|, V: 30
Maximum collector-emitter voltage |Uce|, V: 20
Maximum emitter-base voltage |Ueb|, V: 3
Maximum collector current |Ic max|, A: 0.05
Maximum junction temperature (Tj), Β°C: 150
Transition frequency (ft), MHz: 600
Collector capacitance (Cc), pF: 2
Forward current transfer ratio (hFE), min: 25
Noise Figure, dB: - Package of 2SC1215S
transistor: TO92
2SC1215S
Equivalent Transistors - Cross-Reference Search 2SC1215S
PDF document for downloads:
3.1. 2sc1215.pdf  Size:62K _panasonic  |
 | Transistor
2SC1215
Silicon NPN epitaxial planer type
For high-frequency (VHF band) amplification and oscillation
Unit: mm
5.0± 0.2 4.0± 0.2
Features
High transition frequency fT.
Absolute Maximum Ratings (Ta=25?C)
Parameter Symbol Ratings Unit
+0.2 +0.2
0.45 0.1 0.45 0.1
Collector to base voltage VCBO 30 V
1.27 1.27
Collector to emitter voltage VCEO 20 V
Emitter to base voltage VEBO 3 V
Collector current IC 50 mA
1 2 3
1:Emitter
Collector power dissipation PC 400 mW
2:Collector
3:Base
2.54± 0.15
Junction temperature Tj 150 ?C
JEDEC:TO92
Storage temperature Tstg 55 ~ +150 ?C
EIAJ:SC43A
Electrical Characteristics (Ta=25?C)
Parameter Symbol Conditions min typ max Unit
Collector to base voltage VCBO IC =100΅ A, IE = 0 30 V
Emitter to base voltage VEBO IE = 10΅ A, IC = 0 3 V
Forward current transfer ratio hFE VCB = 10V, IE = 2mA 25
Base to emitter voltage VBE VCB = 10V, IE = 2mA 0.72 V
Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1 |
3.2. 2sc1215_e.pdf Size:58K _panasonic  |
 | Transistor
2SC1215
Silicon NPN epitaxial planer type
For high-frequency (VHF band) amplification and oscillation
Unit: mm
5.0± 0.2 4.0± 0.2
Features
High transition frequency fT.
Absolute Maximum Ratings (Ta=25?C)
Parameter Symbol Ratings Unit
+0.2 +0.2
0.45 0.1 0.45 0.1
Collector to base voltage VCBO 30 V
1.27 1.27
Collector to emitter voltage VCEO 20 V
Emitter to base voltage VEBO 3 V
Collector current IC 50 mA
1 2 3
1:Emitter
Collector power dissipation PC 400 mW
2:Collector
3:Base
2.54± 0.15
Junction temperature Tj 150 ?C
JEDEC:TO92
Storage temperature Tstg 55 ~ +150 ?C
EIAJ:SC43A
Electrical Characteristics (Ta=25?C)
Parameter Symbol Conditions min typ max Unit
Collector to base voltage VCBO IC =100΅ A, IE = 0 30 V
Emitter to base voltage VEBO IE = 10΅ A, IC = 0 3 V
Forward current transfer ratio hFE VCB = 10V, IE = 2mA 25
Base to emitter voltage VBE VCB = 10V, IE = 2mA 0.72 V
Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1 |
4.1. r07ds0431ej_2sc1213a-1.pdf Size:170K _renesas  |
 | Preliminary Datasheet
R07DS0431EJ0300
2SC1213, 2SC1213A
(Previous: REJ03G0684-0200)
Rev.3.00
Silicon NPN Epitaxial
Jun 07, 2011
Application
Low frequency amplifier
Complementary pair with 2SA673 and 2SA673A
Outline
RENESAS Package code: PRSS0003DA-A
(Package name: TO-92 (1))
1. Emitter
2. Collector
3. Base
3
2
1
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol 2SC1213 2SC1213A Unit
Collector to base voltage VCBO 35 50 V
Collector to emitter voltage VCEO 35 50 V
Emitter to base voltage VEBO 4 4 V
Collector current IC 500 500 mA
Collector power dissipation PC 400 400 mW
Junction temperature Tj 150 150 °C
Storage temperature Tstg 55 to +150 55 to +150 °C
R07DS0431EJ0300 Rev.3.00 Page 1 of 4
Jun 07, 2011
2SC1213, 2SC1213A Preliminary
Electrical Characteristics
(Ta = 25°C)
2SC1213 2SC1213A
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base V(BR)CBO 35 50 V IC = 10 ?A, IE = 0
breakdown voltage
Col |
4.2. r07ds0432ej_2sc1213ak-1.pdf Size:102K _renesas  |
 | Preliminary Datasheet
R07DS0432EJ0300
2SC1213A(K)
(Previous: REJ03G0685-0200)
Rev.3.00
Silicon NPN Epitaxial
Jun 07, 2011
Application
Low frequency amplifier
Medium speed switching
Outline
RENESAS Package code: PRSS0003DA-A
(Package name: TO-92 (1))
1. Emitter
2. Collector
3. Base
3
2
1
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 50 V
Collector to emitter voltage VCEO 50 V
Emitter to base voltage VEBO 4 V
Collector current IC 500 mA
Collector power dissipation PC 400 mW
Junction temperature Tj 150 °C
Storage temperature Tstg 55 to +150 °C
R07DS0432EJ0300 Rev.3.00 Page 1 of 6
Jun 07, 2011
2SC1213A(K) Preliminary
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown voltage V(BR)CBO 50 V IC = 10 ?A, IE = 0
Collector to emitter breakdown voltage V(BR)CEO 50 V IC = 1.0 mA, RBE = ?
Emitter to base breakdown voltage V |
4.3. 2sc1213.pdf Size:23K _hitachi  |
 | 2SC1213, 2SC1213A
Silicon NPN Epitaxial
Application
Low frequency amplifier
Complementary pair with 2SA673 and 2SA673A
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SC1213, 2SC1213A
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SC1213 2SC1213A Unit
Collector to base voltage VCBO 35 50 V
Collector to emitter voltage VCEO 35 50 V
Emitter to base voltage VEBO 44V
Collector current IC 500 500 mA
Collector power dissipation PC 400 400 mW
Junction temperature Tj 150 150 ° C
Storage temperature Tstg 55 to +150 55 to +150 ° C
Electrical Characteristics (Ta = 25°C)
2SC1213 2SC1213A
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base V(BR)CBO 35 50 V IC = 10 ΅ A, IE = 0
breakdown voltage
Collector to emitter V(BR)CEO 35 50 V IC = 1 mA, RBE = ?
breakdown voltage
Emitter to base V(BR)EBO 4 4 V IE = 10 ΅ A, IC = 0
breakdown voltage
Collector cutoff current ICBO 0.5 0.5 ΅ A VCB = 20 V, IE = 0 |
4.4. 2sc1212.pdf Size:29K _hitachi  |
 | 2SC1212, 2SC1212A
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
TO-126 MOD
1. Emitter
2. Collector
3. Base
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item Symbol 2SC1212 2SC1212A Unit
Collector to base voltage VCBO 50 80 V
Collector to emitter voltage VCEO 50 80 V
Emitter to base voltage VEBO 44V
Collector current IC 11A
Collector power dissipation PC 0.75 0.75 W
PC*1 88W
Junction temperature Tj 150 150 ° C
Storage temperature Tstg 55 to +150 55 to +150 ° C
Note: 1. Value at TC = 25° C
2SC1212, 2SC1212A
Electrical Characteristics (Ta = 25°C)
2SC1212 2SC1212A
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base V(BR)CBO 50 80 V IC = 1 mA, IE = 0
breakdown voltage
Collector to emitter V(BR)CEO 50 80 V IC = 10 mA, RBE = ?
breakdown voltage
Emitter to base V(BR)EBO 4 4 V IE = 1 mA, IC = 0
breakdown voltage
Collector cutoff current ICBO 5 5 ΅ A VCB = 50 V, IE = 0
DC |
4.5. 2sc1214.pdf Size:22K _hitachi  |
 | 2SC1214
Silicon NPN Epitaxial
ADE-208-1050 (Z)
1st. Edition
Mar. 2001
Application
Low frequency amplifier
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SC1214
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 50 V
Collector to emitter voltage VCEO 50 V
Emitter to base voltage VEBO 4V
Collector current IC 500 mA
Collector power dissipation PC 600 mW
Junction temperature Tj 150 ° C
Storage temperature Tstg 55 to +150 ° C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown V(BR)CBO 50 V IC = 10 ΅ A, IE = 0
voltage
Collector to emitter breakdown V(BR)CEO 50 V IC = 1 mA, RBE = ?
voltage
Emitter to base breakdown V(BR)EBO 4 V IE = 10 ΅ A, IC = 0
voltage
Collector cutoff current ICBO 0.5 ΅ A VCB = 20 V, IE = 0
DC current transfer ratio hFE* 60 320 VCE = 3 V, IC = 10 mA
hFE 10 VCE = 3 V, IC = 500 mA
(pulse test)
Collector |
4.6. 2sc1213-2sc1213a.pdf Size:277K _secos  |
 | 2SC1213, 2SC1213A
NPN
General Purpose Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of β-Cβ specifies halogen and lead free
FEATURES TO-92
Low frequency amplifier
G H
Complementary pair with 2SA673 and 2SA673A
1Emitter
1
1
1
2Collector
2
2
2
3Base
3
3
3
CLASSIFICATION OF hFE(1)
J
A D
Product-Rank 2SC1213-B 2SC1213-C 2SC1213-D
Millimeter
REF.
Min. Max.
B
A 4.40 4.70
Product-Rank 2SC1213A-B 2SC1213A-C 2SC1213A-D
B 4.30 4.70
C 12.70 -
K
Range 60~120 100~200 160~320
D 3.30 3.81
E 0.36 0.56
F 0.36 0.51
G 1.27 TYP.
E C F
H 1.10 -
J 2.42 2.66
K 0.36 0.76
Collector
3
2
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25Β°C unless otherwise specified)
Parameter Symbol Rating Unit
2SC1213 35
Collector to Base Voltage VCBO V
2SC1213A 50
2SC1213 35
Collector to Emitter Voltage VCEO V
2SC1213A 50
Emitter to Base Voltage VEBO 4 V
Continuous Collector Current IC 500 mA
C |
4.7. 2sc1212_2sc1212a.pdf Size:146K _inchange_semiconductor  |
 | Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1212 2SC1212A
DESCRIPTION ΠΒ€ With TO-126 package ΠΒ€ Complement to type 2SA743/743A APPLICATIONS ΠΒ€ For low frequency power amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
ΠΒ€
Absolute maximum ratings(Ta=25ΠΠΆ )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector- emitter voltage
VEBO IC
Emitter-base voltage Collector current
HAN INC
SEM GE
2SC1212A 2SC1212 2SC1212A
2SC1212
Open emitter
OND IC
CONDITIONS
TOR UC
VALUE 50 80 50 80
UNIT
V
Open base
V
Open collector
4 1
V A
Ta=25ΠΠΆ PD Total power dissipation TC=25ΠΠΆ Tj Tstg Junction temperature Storage temperature
0.75 W 8 150 -55ΠΒ« +150 ΠΠΆ ΠΠΆ
|
4.8. 2sc1212a.pdf Size:102K _inchange_semiconductor  |
 | INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SC1212A
DESCRIPTION
Β·High Collector Current -IC= 1A
Β·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
Β·Good Linearity of hFE
APPLICATIONS
Β·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25?)
SYMBOL PARAMETER VALUE UNIT
VCBO Collector-Base Voltage 80 V
VCEO Collector-Emitter Voltage 80 V
VEBO Emitter-Base Voltage 4 V
IC Collector Current-Continuous 1 A
Collector Power Dissipation
8
@ TC=25?
PC W
Collector Power Dissipation
0.75
@ Ta=25?
TJ Junction Temperature 150 ?
Storage Temperature Range -55~150 ?
Tstg
isc Website:www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SC1212A
ELECTRICAL CHARACTERISTICS
TC=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 80 V
V(BR |
See also transistors datasheet: 2SC1212AC
, 2SC1212B
, 2SC1212C
, 2SC1213
, 2SC1213A
, 2SC1214
, 2SC1214B
, 2SC1215
, 2N2222
, 2SC1215T
, 2SC1215Z
, 2SC1216
, 2SC1217
, 2SC1218
, 2SC1219
, 2SC122
, 2SC1220
. Keywords| 2SC1215S
Datasheet | 2SC1215S
Datenblatt | 2SC1215S
RoHS | 2SC1215S
Distributor | | 2SC1215S
Application Notes | 2SC1215S
Component | 2SC1215S
Circuit | 2SC1215S
Schematic | | 2SC1215S
Equivalent | 2SC1215S
Cross Reference | 2SC1215S
Data Sheet | 2SC1215S
Fiche Technique |
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