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2SC1216
  2SC1216
  2SC1216
 
2SC1216
  2SC1216
  2SC1216
 
2SC1216
  2SC1216
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU214
BU215 .. BUF410AI
BUF410FI .. BUS22BF
BUS22C .. BUW81A
BUW84 .. BUY83
BUY84 .. CD9013J
CD9014 .. CIL157
CIL157A .. CL166A
CL166B .. CPS2540B
CPS2545B .. CSA968
CSA968A .. CSC2688BPL
CSC2688G .. CTP1108
CTP1109 .. D29J6
D29J7 .. D42CU5
D42CU6 .. D64VP4
D64VP5 .. DT400-300
DT400-400 .. DTC015EM
DTC015EUB .. DTL3501
DTL3502 .. ECG2332
ECG2334 .. ED1602C
ED1602D .. ET206
ET359 .. FE4021
FE4022 .. FMG12
FMG13 .. FPC644
FPC828 .. FXT555SM
FXT557 .. GE55821
GE56551 .. GET3
GET3013 .. GSDS50018
GSDS50020 .. GT43
GT44 .. HEPS3035
HEPS3047 .. HSE131
HSE133 .. IMX2
IMX3 .. K2107
K2107A .. KRA161F
KRA163F .. KRC117
KRC117M .. KRC868E
KRC868U .. KSB772-R
KSB772-Y .. KSC5020-R
KSC5020-Y .. KSE13004
KSE13005 .. KT210B
KT210V .. KT347B
KT347V .. KT644G
KT644V .. KT817G9
KT817V .. KT916B
KT918A .. KTC3103A1
KTC3103B1 .. KTX311T
KTX312T .. MD1131F
MD1132 .. MJ14002
MJ14003 .. MJE13003HT
MJE13003HV .. MJF18008
MJF2955 .. MMBT1015
MMBT123S .. MMBTA56L
MMBTA56LT1 .. MP1550A
MP1551 .. MP800
MP801 .. MPS3866
MPS3900 .. MPSW55
MPSW56 .. MT3002
MT3011 .. NA21ZX
NA21ZY .. NB021FZ
NB021H .. NB213YY
NB213Z .. NKT242L
NKT243 .. NR431DF
NR431DG .. NTE2542
NTE2543 .. P217A
P217B .. PDTA114YT
PDTA114YU .. PMD1702K
PMD1703K .. PTB20030
PTB20031 .. RCA8766D
RCA8766E .. RN1908FE
RN1908FS .. RN2962FE
RN2962FS .. S629T
S630T .. SE8520
SE8521 .. SM3174
SM3176 .. SRC1206UF
SRC1207 .. STD826
STD830CP40 .. T1344
T1346 .. TBF869
TBF870 .. TIP32F
TIP33 .. TIX620
TIX621 .. TN5143
TN5172 .. TR21
TR236 .. UN1224
UN1518 .. UPT211
UPT212 .. ZTX107CL
ZTX107CM .. ZTX549
ZTX550 .. ZXTPS720MC
 
2SC1216 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SC1216 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC1216

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.3

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 20

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.2

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 250

Collector capacitance (Cc), pF: 50

Forward current transfer ratio (hFE), min: 60

Noise Figure, dB: -

Package of 2SC1216 transistor: TO18

2SC1216 Equivalent Transistors - Cross-Reference Search

2SC1216 PDF doc:

4.1. r07ds0432ej_2sc1213ak-1.pdf Size:102K _renesas

2SC1216
2SC1216
Preliminary Datasheet R07DS0432EJ0300 2SC1213A(K) (Previous: REJ03G0685-0200) Rev.3.00 Silicon NPN Epitaxial Jun 07, 2011 Application Low frequency amplifier Medium speed switching Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 4 V Collector current IC 500 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C R07DS0432EJ0300 Rev.3.00 Page 1 of 6 Jun 07, 2011 2SC1213A(K) Preliminary Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 50 V IC = 10 ?A, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 50 V IC = 1.0 mA, RBE = ? Emitter to base breakdown voltage V

4.2. r07ds0431ej_2sc1213a-1.pdf Size:170K _renesas

2SC1216
2SC1216
Preliminary Datasheet R07DS0431EJ0300 2SC1213, 2SC1213A (Previous: REJ03G0684-0200) Rev.3.00 Silicon NPN Epitaxial Jun 07, 2011 Application Low frequency amplifier Complementary pair with 2SA673 and 2SA673A Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SC1213 2SC1213A Unit Collector to base voltage VCBO 35 50 V Collector to emitter voltage VCEO 35 50 V Emitter to base voltage VEBO 4 4 V Collector current IC 500 500 mA Collector power dissipation PC 400 400 mW Junction temperature Tj 150 150 C Storage temperature Tstg 55 to +150 55 to +150 C R07DS0431EJ0300 Rev.3.00 Page 1 of 4 Jun 07, 2011 2SC1213, 2SC1213A Preliminary Electrical Characteristics (Ta = 25C) 2SC1213 2SC1213A Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO 35 50 V IC = 10 ?A, IE = 0 breakdown voltage Col

4.3. 2sc1215_e.pdf Size:58K _panasonic

2SC1216
2SC1216
Transistor 2SC1215 Silicon NPN epitaxial planer type For high-frequency (VHF band) amplification and oscillation Unit: mm 5.0 0.2 4.0 0.2 Features High transition frequency fT. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V Collector current IC 50 mA 1 2 3 1:Emitter Collector power dissipation PC 400 mW 2:Collector 3:Base 2.54 0.15 Junction temperature Tj 150 ?C JEDEC:TO92 Storage temperature Tstg 55 ~ +150 ?C EIAJ:SC43A Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC =100 A, IE = 0 30 V Emitter to base voltage VEBO IE = 10 A, IC = 0 3 V Forward current transfer ratio hFE VCB = 10V, IE = 2mA 25 Base to emitter voltage VBE VCB = 10V, IE = 2mA 0.72 V Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1

4.4. 2sc1215.pdf Size:62K _panasonic

2SC1216
2SC1216
Transistor 2SC1215 Silicon NPN epitaxial planer type For high-frequency (VHF band) amplification and oscillation Unit: mm 5.0 0.2 4.0 0.2 Features High transition frequency fT. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V Collector current IC 50 mA 1 2 3 1:Emitter Collector power dissipation PC 400 mW 2:Collector 3:Base 2.54 0.15 Junction temperature Tj 150 ?C JEDEC:TO92 Storage temperature Tstg 55 ~ +150 ?C EIAJ:SC43A Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC =100 A, IE = 0 30 V Emitter to base voltage VEBO IE = 10 A, IC = 0 3 V Forward current transfer ratio hFE VCB = 10V, IE = 2mA 25 Base to emitter voltage VBE VCB = 10V, IE = 2mA 0.72 V Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1

4.5. 2sc1212.pdf Size:29K _hitachi

2SC1216
2SC1216
2SC1212, 2SC1212A Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25C) Ratings Item Symbol 2SC1212 2SC1212A Unit Collector to base voltage VCBO 50 80 V Collector to emitter voltage VCEO 50 80 V Emitter to base voltage VEBO 44V Collector current IC 11A Collector power dissipation PC 0.75 0.75 W PC*1 88W Junction temperature Tj 150 150 C Storage temperature Tstg 55 to +150 55 to +150 C Note: 1. Value at TC = 25 C 2SC1212, 2SC1212A Electrical Characteristics (Ta = 25C) 2SC1212 2SC1212A Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO 50 80 V IC = 1 mA, IE = 0 breakdown voltage Collector to emitter V(BR)CEO 50 80 V IC = 10 mA, RBE = ? breakdown voltage Emitter to base V(BR)EBO 4 4 V IE = 1 mA, IC = 0 breakdown voltage Collector cutoff current ICBO 5 5 A VCB = 50 V, IE = 0 DC

4.6. 2sc1213.pdf Size:23K _hitachi

2SC1216
2SC1216
2SC1213, 2SC1213A Silicon NPN Epitaxial Application Low frequency amplifier Complementary pair with 2SA673 and 2SA673A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1213, 2SC1213A Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SC1213 2SC1213A Unit Collector to base voltage VCBO 35 50 V Collector to emitter voltage VCEO 35 50 V Emitter to base voltage VEBO 44V Collector current IC 500 500 mA Collector power dissipation PC 400 400 mW Junction temperature Tj 150 150 C Storage temperature Tstg 55 to +150 55 to +150 C Electrical Characteristics (Ta = 25C) 2SC1213 2SC1213A Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO 35 50 V IC = 10 A, IE = 0 breakdown voltage Collector to emitter V(BR)CEO 35 50 V IC = 1 mA, RBE = ? breakdown voltage Emitter to base V(BR)EBO 4 4 V IE = 10 A, IC = 0 breakdown voltage Collector cutoff current ICBO 0.5 0.5 A VCB = 20 V, IE = 0

4.7. 2sc1214.pdf Size:22K _hitachi

2SC1216
2SC1216
2SC1214 Silicon NPN Epitaxial ADE-208-1050 (Z) 1st. Edition Mar. 2001 Application Low frequency amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1214 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 4V Collector current IC 500 mA Collector power dissipation PC 600 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 50 V IC = 10 A, IE = 0 voltage Collector to emitter breakdown V(BR)CEO 50 V IC = 1 mA, RBE = ? voltage Emitter to base breakdown V(BR)EBO 4 V IE = 10 A, IC = 0 voltage Collector cutoff current ICBO 0.5 A VCB = 20 V, IE = 0 DC current transfer ratio hFE* 60 320 VCE = 3 V, IC = 10 mA hFE 10 VCE = 3 V, IC = 500 mA (pulse test) Collector

4.8. 2sc1213-2sc1213a.pdf Size:277K _secos

2SC1216
2SC1216
2SC1213, 2SC1213A NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-92 Low frequency amplifier G H Complementary pair with 2SA673 and 2SA673A 1Emitter 1 1 1 2Collector 2 2 2 3Base 3 3 3 CLASSIFICATION OF hFE(1) J A D Product-Rank 2SC1213-B 2SC1213-C 2SC1213-D Millimeter REF. Min. Max. B A 4.40 4.70 Product-Rank 2SC1213A-B 2SC1213A-C 2SC1213A-D B 4.30 4.70 C 12.70 - K Range 60~120 100~200 160~320 D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. E C F H 1.10 - J 2.42 2.66 K 0.36 0.76 Collector 3 2 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit 2SC1213 35 Collector to Base Voltage VCBO V 2SC1213A 50 2SC1213 35 Collector to Emitter Voltage VCEO V 2SC1213A 50 Emitter to Base Voltage VEBO 4 V Continuous Collector Current IC 500 mA C

4.9. 2sc1212.pdf Size:179K _jmnic

2SC1216
2SC1216
JMnic Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A DESCRIPTION · ·With TO-126 package ·Complement to type 2SA743/743A APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SC1212 50 VCBO Collector-base voltage Open emitter V 2SC1212A 80 2SC1212 50 VCEO Collector- emitter voltage Open base V 2SC1212A 80 VEBO Emitter-base voltage Open collector 4 V IC Collector current 1 A Ta=25? 0.75 PD Total power dissipation W TC=25? 8 Tj Junction temperature 150 ? Tstg Storage temperature -55~+150 ? JMnic Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SC1212 50 Collector-emitter V(BR)CEO IC=10mA ;RBE=? V breakdown voltage 2SC1212A

4.10. 2sc1212_2sc1212a.pdf Size:146K _inchange_semiconductor

2SC1216
2SC1216
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2SA743/743A APPLICATIONS Ў¤ For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector- emitter voltage VEBO IC Emitter-base voltage Collector current HAN INC SEM GE 2SC1212A 2SC1212 2SC1212A 2SC1212 Open emitter OND IC CONDITIONS TOR UC VALUE 50 80 50 80 UNIT V Open base V Open collector 4 1 V A Ta=25Ўж PD Total power dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature 0.75 W 8 150 -55Ў« +150 Ўж Ўж

4.11. 2sc1212a.pdf Size:102K _inchange_semiconductor

2SC1216
2SC1216
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1212A DESCRIPTION ·High Collector Current -IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 1 A Collector Power Dissipation 8 @ TC=25? PC W Collector Power Dissipation 0.75 @ Ta=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1212A ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 80 V V(BR

See also transistors datasheet: 2SC1213 , 2SC1213A , 2SC1214 , 2SC1214B , 2SC1215 , 2SC1215S , 2SC1215T , 2SC1215Z , 2N2222A , 2SC1217 , 2SC1218 , 2SC1219 , 2SC122 , 2SC1220 , 2SC1220F , 2SC1222 , 2SC1222E .

Keywords

 2SC1216 Datasheet  2SC1216 Datenblatt  2SC1216 RoHS  2SC1216 Distributor
 2SC1216 Application Notes  2SC1216 Component  2SC1216 Circuit  2SC1216 Schematic
 2SC1216 Equivalent  2SC1216 Cross Reference  2SC1216 Data Sheet  2SC1216 Fiche Technique

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