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2SC1216 Transistor. Datasheet pdf. Equivalent

Type Designator: 2SC1216

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO18

2SC1216 Transistor Equivalent Substitute - Cross-Reference Search

2SC1216 Datasheet PDF:

4.1. r07ds0432ej_2sc1213ak-1.pdf Size:102K _renesas

2SC1216
2SC1216

Preliminary Datasheet R07DS0432EJ0300 2SC1213A(K) (Previous: REJ03G0685-0200) Rev.3.00 Silicon NPN Epitaxial Jun 07, 2011 Application Low frequency amplifier Medium speed switching Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to b

4.2. r07ds0431ej_2sc1213a-1.pdf Size:170K _renesas

2SC1216
2SC1216

Preliminary Datasheet R07DS0431EJ0300 2SC1213, 2SC1213A (Previous: REJ03G0684-0200) Rev.3.00 Silicon NPN Epitaxial Jun 07, 2011 Application Low frequency amplifier Complementary pair with 2SA673 and 2SA673A Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25C) Item Symbol 2S

4.3. 2sc1215_e.pdf Size:58K _panasonic

2SC1216
2SC1216

Transistor 2SC1215 Silicon NPN epitaxial planer type For high-frequency (VHF band) amplification and oscillation Unit: mm 5.0 0.2 4.0 0.2 Features High transition frequency fT. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Emitter to base voltage VE

4.4. 2sc1215.pdf Size:62K _panasonic

2SC1216
2SC1216

Transistor 2SC1215 Silicon NPN epitaxial planer type For high-frequency (VHF band) amplification and oscillation Unit: mm 5.0 0.2 4.0 0.2 Features High transition frequency fT. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Emitter to base voltage VE

4.5. 2sc1212.pdf Size:29K _hitachi

2SC1216
2SC1216

2SC1212, 2SC1212A Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25C) Ratings Item Symbol 2SC1212 2SC1212A Unit Collector to base voltage VCBO 50 80 V Collector to emitter voltage VCEO 50 80 V Emitter to base voltage VEBO 44V Collector current IC 11A Collector power dissipat

4.6. 2sc1214.pdf Size:22K _hitachi

2SC1216
2SC1216

2SC1214 Silicon NPN Epitaxial ADE-208-1050 (Z) 1st. Edition Mar. 2001 Application Low frequency amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1214 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 4V Collector current IC 500 mA Collector

4.7. 2sc1213.pdf Size:23K _hitachi

2SC1216
2SC1216

2SC1213, 2SC1213A Silicon NPN Epitaxial Application Low frequency amplifier Complementary pair with 2SA673 and 2SA673A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1213, 2SC1213A Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SC1213 2SC1213A Unit Collector to base voltage VCBO 35 50 V Collector to emitter voltage VCEO 35 50 V Emitter to base voltage VEBO 44V

4.8. 2sc1213-2sc1213a.pdf Size:277K _secos

2SC1216
2SC1216

2SC1213, 2SC1213A NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-92 Low frequency amplifier G H Complementary pair with 2SA673 and 2SA673A 1Emitter 1 1 1 2Collector 2 2 2 3Base 3 3 3 CLASSIFICATION OF hFE(1) J A D Product-Rank 2SC1213-B 2SC1213-C 2SC1213-D Mil

4.9. 2sc1212.pdf Size:179K _jmnic

2SC1216
2SC1216

JMnic Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A DESCRIPTION · ·With TO-126 package ·Complement to type 2SA743/743A APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SC1212 50

4.10. 2sc1212a.pdf Size:102K _inchange_semiconductor

2SC1216
2SC1216

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1212A DESCRIPTION ·High Collector Current -IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Volta

4.11. 2sc1212_2sc1212a.pdf Size:146K _inchange_semiconductor

2SC1216
2SC1216

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2SA743/743A APPLICATIONS Ў¤ For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL PARAMETER

Datasheet: 2SC1213 , 2SC1213A , 2SC1214 , 2SC1214B , 2SC1215 , 2SC1215S , 2SC1215T , 2SC1215Z , 2N2222A , 2SC1217 , 2SC1218 , 2SC1219 , 2SC122 , 2SC1220 , 2SC1220F , 2SC1222 , 2SC1222E .

 


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