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2SC1216
  2SC1216
  2SC1216
 
2SC1216
  2SC1216
  2SC1216
 
2SC1216
  2SC1216
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
2SC1216 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SC1216 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC1216

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.3

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 20

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.2

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 250

Collector capacitance (Cc), pF: 50

Forward current transfer ratio (hFE), min: 60

Noise Figure, dB: -

Package of 2SC1216 transistor: TO18

2SC1216 Equivalent Transistors - Cross-Reference Search

2SC1216 PDF doc:

4.1. r07ds0432ej_2sc1213ak-1.pdf Size:102K _renesas

2SC1216
2SC1216
Preliminary Datasheet R07DS0432EJ0300 2SC1213A(K) (Previous: REJ03G0685-0200) Rev.3.00 Silicon NPN Epitaxial Jun 07, 2011 Application Low frequency amplifier Medium speed switching Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 4 V Collector current IC 500 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C R07DS0432EJ0300 Rev.3.00 Page 1 of 6 Jun 07, 2011 2SC1213A(K) Preliminary Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 50 V IC = 10 ?A, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 50 V IC = 1.0 mA, RBE = ? Emitter to base breakdown voltage V

4.2. r07ds0431ej_2sc1213a-1.pdf Size:170K _renesas

2SC1216
2SC1216
Preliminary Datasheet R07DS0431EJ0300 2SC1213, 2SC1213A (Previous: REJ03G0684-0200) Rev.3.00 Silicon NPN Epitaxial Jun 07, 2011 Application Low frequency amplifier Complementary pair with 2SA673 and 2SA673A Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SC1213 2SC1213A Unit Collector to base voltage VCBO 35 50 V Collector to emitter voltage VCEO 35 50 V Emitter to base voltage VEBO 4 4 V Collector current IC 500 500 mA Collector power dissipation PC 400 400 mW Junction temperature Tj 150 150 C Storage temperature Tstg 55 to +150 55 to +150 C R07DS0431EJ0300 Rev.3.00 Page 1 of 4 Jun 07, 2011 2SC1213, 2SC1213A Preliminary Electrical Characteristics (Ta = 25C) 2SC1213 2SC1213A Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO 35 50 V IC = 10 ?A, IE = 0 breakdown voltage Col

4.3. 2sc1215_e.pdf Size:58K _panasonic

2SC1216
2SC1216
Transistor 2SC1215 Silicon NPN epitaxial planer type For high-frequency (VHF band) amplification and oscillation Unit: mm 5.0 0.2 4.0 0.2 Features High transition frequency fT. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V Collector current IC 50 mA 1 2 3 1:Emitter Collector power dissipation PC 400 mW 2:Collector 3:Base 2.54 0.15 Junction temperature Tj 150 ?C JEDEC:TO92 Storage temperature Tstg 55 ~ +150 ?C EIAJ:SC43A Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC =100 A, IE = 0 30 V Emitter to base voltage VEBO IE = 10 A, IC = 0 3 V Forward current transfer ratio hFE VCB = 10V, IE = 2mA 25 Base to emitter voltage VBE VCB = 10V, IE = 2mA 0.72 V Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1

4.4. 2sc1215.pdf Size:62K _panasonic

2SC1216
2SC1216
Transistor 2SC1215 Silicon NPN epitaxial planer type For high-frequency (VHF band) amplification and oscillation Unit: mm 5.0 0.2 4.0 0.2 Features High transition frequency fT. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V Collector current IC 50 mA 1 2 3 1:Emitter Collector power dissipation PC 400 mW 2:Collector 3:Base 2.54 0.15 Junction temperature Tj 150 ?C JEDEC:TO92 Storage temperature Tstg 55 ~ +150 ?C EIAJ:SC43A Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC =100 A, IE = 0 30 V Emitter to base voltage VEBO IE = 10 A, IC = 0 3 V Forward current transfer ratio hFE VCB = 10V, IE = 2mA 25 Base to emitter voltage VBE VCB = 10V, IE = 2mA 0.72 V Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1

4.5. 2sc1212.pdf Size:29K _hitachi

2SC1216
2SC1216
2SC1212, 2SC1212A Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25C) Ratings Item Symbol 2SC1212 2SC1212A Unit Collector to base voltage VCBO 50 80 V Collector to emitter voltage VCEO 50 80 V Emitter to base voltage VEBO 44V Collector current IC 11A Collector power dissipation PC 0.75 0.75 W PC*1 88W Junction temperature Tj 150 150 C Storage temperature Tstg 55 to +150 55 to +150 C Note: 1. Value at TC = 25 C 2SC1212, 2SC1212A Electrical Characteristics (Ta = 25C) 2SC1212 2SC1212A Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO 50 80 V IC = 1 mA, IE = 0 breakdown voltage Collector to emitter V(BR)CEO 50 80 V IC = 10 mA, RBE = ? breakdown voltage Emitter to base V(BR)EBO 4 4 V IE = 1 mA, IC = 0 breakdown voltage Collector cutoff current ICBO 5 5 A VCB = 50 V, IE = 0 DC

4.6. 2sc1213.pdf Size:23K _hitachi

2SC1216
2SC1216
2SC1213, 2SC1213A Silicon NPN Epitaxial Application Low frequency amplifier Complementary pair with 2SA673 and 2SA673A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1213, 2SC1213A Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SC1213 2SC1213A Unit Collector to base voltage VCBO 35 50 V Collector to emitter voltage VCEO 35 50 V Emitter to base voltage VEBO 44V Collector current IC 500 500 mA Collector power dissipation PC 400 400 mW Junction temperature Tj 150 150 C Storage temperature Tstg 55 to +150 55 to +150 C Electrical Characteristics (Ta = 25C) 2SC1213 2SC1213A Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO 35 50 V IC = 10 A, IE = 0 breakdown voltage Collector to emitter V(BR)CEO 35 50 V IC = 1 mA, RBE = ? breakdown voltage Emitter to base V(BR)EBO 4 4 V IE = 10 A, IC = 0 breakdown voltage Collector cutoff current ICBO 0.5 0.5 A VCB = 20 V, IE = 0

4.7. 2sc1214.pdf Size:22K _hitachi

2SC1216
2SC1216
2SC1214 Silicon NPN Epitaxial ADE-208-1050 (Z) 1st. Edition Mar. 2001 Application Low frequency amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1214 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 4V Collector current IC 500 mA Collector power dissipation PC 600 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 50 V IC = 10 A, IE = 0 voltage Collector to emitter breakdown V(BR)CEO 50 V IC = 1 mA, RBE = ? voltage Emitter to base breakdown V(BR)EBO 4 V IE = 10 A, IC = 0 voltage Collector cutoff current ICBO 0.5 A VCB = 20 V, IE = 0 DC current transfer ratio hFE* 60 320 VCE = 3 V, IC = 10 mA hFE 10 VCE = 3 V, IC = 500 mA (pulse test) Collector

4.8. 2sc1213-2sc1213a.pdf Size:277K _secos

2SC1216
2SC1216
2SC1213, 2SC1213A NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-92 Low frequency amplifier G H Complementary pair with 2SA673 and 2SA673A 1Emitter 1 1 1 2Collector 2 2 2 3Base 3 3 3 CLASSIFICATION OF hFE(1) J A D Product-Rank 2SC1213-B 2SC1213-C 2SC1213-D Millimeter REF. Min. Max. B A 4.40 4.70 Product-Rank 2SC1213A-B 2SC1213A-C 2SC1213A-D B 4.30 4.70 C 12.70 - K Range 60~120 100~200 160~320 D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. E C F H 1.10 - J 2.42 2.66 K 0.36 0.76 Collector 3 2 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit 2SC1213 35 Collector to Base Voltage VCBO V 2SC1213A 50 2SC1213 35 Collector to Emitter Voltage VCEO V 2SC1213A 50 Emitter to Base Voltage VEBO 4 V Continuous Collector Current IC 500 mA C

4.9. 2sc1212.pdf Size:179K _jmnic

2SC1216
2SC1216
JMnic Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A DESCRIPTION · ·With TO-126 package ·Complement to type 2SA743/743A APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SC1212 50 VCBO Collector-base voltage Open emitter V 2SC1212A 80 2SC1212 50 VCEO Collector- emitter voltage Open base V 2SC1212A 80 VEBO Emitter-base voltage Open collector 4 V IC Collector current 1 A Ta=25? 0.75 PD Total power dissipation W TC=25? 8 Tj Junction temperature 150 ? Tstg Storage temperature -55~+150 ? JMnic Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SC1212 50 Collector-emitter V(BR)CEO IC=10mA ;RBE=? V breakdown voltage 2SC1212A

4.10. 2sc1212_2sc1212a.pdf Size:146K _inchange_semiconductor

2SC1216
2SC1216
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2SA743/743A APPLICATIONS Ў¤ For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector- emitter voltage VEBO IC Emitter-base voltage Collector current HAN INC SEM GE 2SC1212A 2SC1212 2SC1212A 2SC1212 Open emitter OND IC CONDITIONS TOR UC VALUE 50 80 50 80 UNIT V Open base V Open collector 4 1 V A Ta=25Ўж PD Total power dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature 0.75 W 8 150 -55Ў« +150 Ўж Ўж

4.11. 2sc1212a.pdf Size:102K _inchange_semiconductor

2SC1216
2SC1216
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1212A DESCRIPTION ·High Collector Current -IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 1 A Collector Power Dissipation 8 @ TC=25? PC W Collector Power Dissipation 0.75 @ Ta=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1212A ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 80 V V(BR

See also transistors datasheet: 2SC1213 , 2SC1213A , 2SC1214 , 2SC1214B , 2SC1215 , 2SC1215S , 2SC1215T , 2SC1215Z , 2N2222A , 2SC1217 , 2SC1218 , 2SC1219 , 2SC122 , 2SC1220 , 2SC1220F , 2SC1222 , 2SC1222E .

Keywords

 2SC1216 Datasheet  2SC1216 Datenblatt  2SC1216 RoHS  2SC1216 Distributor
 2SC1216 Application Notes  2SC1216 Component  2SC1216 Circuit  2SC1216 Schematic
 2SC1216 Equivalent  2SC1216 Cross Reference  2SC1216 Data Sheet  2SC1216 Fiche Technique

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