2N1662 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N1662

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 85

Maximum collector-base voltage |Ucb|, V: 120

Maximum collector-emitter voltage |Uce|, V: 100

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 2

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz: 25

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 45

Noise Figure, dB: -

Package of 2N1662 transistor: TO53

2N1662 Equivalent Transistors - Cross-Reference Search

2N1662 PDF document for downloads:

5.1. 2n166.pdf Size:260K _general_electric

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See also transistors datasheet: 2N1658-13 , 2N1658A-13 , 2N1659 , 2N1659-13 , 2N1659A-13 , 2N166 , 2N1660 , 2N1661 , 2N60 , 2N1663 , 2N1664 , 2N1665 , 2N1666 , 2N1667 , 2N1668 , 2N1669 , 2N167 .

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