| |
2SC1257
Transistor Datasheet. Parameters and Characteristics. Type Designator: 2SC1257
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 14
Maximum collector-base voltage |Ucb|, V: 36
Maximum collector-emitter voltage |Uce|, V: 18
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 1.5
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 380
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 15
Noise Figure, dB: - Package of 2SC1257
transistor: TO128
2SC1257
Equivalent Transistors - Cross-Reference Search 2SC1257
PDF document for downloads:
4.1. 2sc1252.pdf  Size:28K _advanced-semi  |
 | 2SC1252
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The 2SC1252 is a High Frequency
PACKAGE STYLE TO-39
Transistor, Designed for Wide Band
Amplifier Applications up to 500 MHz.
FEATURES INCLUDE:
High Gain -17 dB Typ. @ 200 MHz
Low NF - 3.0 dB Typ. @ 200 MHz
Hermetic TO-39 Package
MAXIMUM RATINGS
IC 400 mA
VCB 45 V
VCE 25 V
PDISS 5 W @ TC = 25 C
TJ -65 to +200 C
1 = Emitter 2 = Base
TSTG -65 to +200 C
3 & 4 = Collector (Case)
35 C/W
?JC
?
?
?
CHARACTERISTICS TC = 25 C
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 5.0 mA 25 V
BVCBO IC = 100 A 45 V
ICBO VCE = 30 V 100 nA
IEBO VEB = 2.0 V 500 nA
hFE VCE = 10 V IC = 50 mA 20 200 ---
VCE = 15 V IC = 15 mA f = 200 MHz 1200
ft MHz
VCE = 15 V IC = 70 mA 1400
COB VCB = 15 V f = 1.0 MHz 3.0 pF
GPE VCE = 15 V IC = 50 mA f = 200 MHz 15 17 dB
NF VCE = 15 V IC = 30 mA f = 200 MHz 3.0 4.0 dB
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. |
4.2. 2sc1251.pdf Size:40K _advanced-semi  |
 | 2SC1251
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The 2SC1251 is a Common Emitter
Device Designed for High Linearity
Class A Amplifiers up to 2.0 GHz.
PACKAGE STYLE .204 4L STUD
FEATURES INCLUDE:
Direct Replacement for NE74020
High Gain - 10 dB min. @ 1.0 GHz
Gold Metalization
MAXIMUM RATINGS
IC 300 mA
VCB 45 V
PDISS 5.3W @ TC = 25 OC
TJ -65 OC to +200 OC
TSTG -65 OC to +150 OC
1 = COLLECTOR 2 & 4 = EMITTER
3 = BASE
33 OC/W
?JC
?
?
?
CHARACTERISTICS TC = 25 OC
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 10 mA 25 V
BVCBO IC = 10 mA 45 V
BVEBO IE = 1.0 mA 3.0 V
hFE VCE = 5.0 V IC = 100 mA 20 200 ---
COB VCB = 15 V f = 1.0 MHz 3.0 pF
VCE = 15 V IC = 100 mA POUT = 0.5 W 13 dB
PG
P1dB f = 1000 MHz +27 +29 dBm
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 1/2
Specifications are subject to change without notice.
TVU005B
S - PARAMETE |
5.1. r07ds0431ej_2sc1213a-1.pdf Size:170K _renesas  |
 | Preliminary Datasheet
R07DS0431EJ0300
2SC1213, 2SC1213A
(Previous: REJ03G0684-0200)
Rev.3.00
Silicon NPN Epitaxial
Jun 07, 2011
Application
Low frequency amplifier
Complementary pair with 2SA673 and 2SA673A
Outline
RENESAS Package code: PRSS0003DA-A
(Package name: TO-92 (1))
1. Emitter
2. Collector
3. Base
3
2
1
Absolute Maximum Ratings
(Ta = 25C)
Item Symbol 2SC1213 2SC1213A Unit
Collector to base voltage VCBO 35 50 V
Collector to emitter voltage VCEO 35 50 V
Emitter to base voltage VEBO 4 4 V
Collector current IC 500 500 mA
Collector power dissipation PC 400 400 mW
Junction temperature Tj 150 150 C
Storage temperature Tstg 55 to +150 55 to +150 C
R07DS0431EJ0300 Rev.3.00 Page 1 of 4
Jun 07, 2011
2SC1213, 2SC1213A Preliminary
Electrical Characteristics
(Ta = 25C)
2SC1213 2SC1213A
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base V(BR)CBO 35 50 V IC = 10 ?A, IE = 0
breakdown voltage
Col |
5.2. r07ds0432ej_2sc1213ak-1.pdf Size:102K _renesas  |
 | Preliminary Datasheet
R07DS0432EJ0300
2SC1213A(K)
(Previous: REJ03G0685-0200)
Rev.3.00
Silicon NPN Epitaxial
Jun 07, 2011
Application
Low frequency amplifier
Medium speed switching
Outline
RENESAS Package code: PRSS0003DA-A
(Package name: TO-92 (1))
1. Emitter
2. Collector
3. Base
3
2
1
Absolute Maximum Ratings
(Ta = 25C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 50 V
Collector to emitter voltage VCEO 50 V
Emitter to base voltage VEBO 4 V
Collector current IC 500 mA
Collector power dissipation PC 400 mW
Junction temperature Tj 150 C
Storage temperature Tstg 55 to +150 C
R07DS0432EJ0300 Rev.3.00 Page 1 of 6
Jun 07, 2011
2SC1213A(K) Preliminary
Electrical Characteristics
(Ta = 25C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown voltage V(BR)CBO 50 V IC = 10 ?A, IE = 0
Collector to emitter breakdown voltage V(BR)CEO 50 V IC = 1.0 mA, RBE = ?
Emitter to base breakdown voltage V |
5.3. 2sc1226.pdf Size:75K _panasonic 5.4. 2sc1215.pdf Size:62K _panasonic  |
 | Transistor
2SC1215
Silicon NPN epitaxial planer type
For high-frequency (VHF band) amplification and oscillation
Unit: mm
5.0 0.2 4.0 0.2
Features
High transition frequency fT.
Absolute Maximum Ratings (Ta=25?C)
Parameter Symbol Ratings Unit
+0.2 +0.2
0.45 0.1 0.45 0.1
Collector to base voltage VCBO 30 V
1.27 1.27
Collector to emitter voltage VCEO 20 V
Emitter to base voltage VEBO 3 V
Collector current IC 50 mA
1 2 3
1:Emitter
Collector power dissipation PC 400 mW
2:Collector
3:Base
2.54 0.15
Junction temperature Tj 150 ?C
JEDEC:TO92
Storage temperature Tstg 55 ~ +150 ?C
EIAJ:SC43A
Electrical Characteristics (Ta=25?C)
Parameter Symbol Conditions min typ max Unit
Collector to base voltage VCBO IC =100 A, IE = 0 30 V
Emitter to base voltage VEBO IE = 10 A, IC = 0 3 V
Forward current transfer ratio hFE VCB = 10V, IE = 2mA 25
Base to emitter voltage VBE VCB = 10V, IE = 2mA 0.72 V
Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1 |
5.5. 2sc1215_e.pdf Size:58K _panasonic  |
 | Transistor
2SC1215
Silicon NPN epitaxial planer type
For high-frequency (VHF band) amplification and oscillation
Unit: mm
5.0 0.2 4.0 0.2
Features
High transition frequency fT.
Absolute Maximum Ratings (Ta=25?C)
Parameter Symbol Ratings Unit
+0.2 +0.2
0.45 0.1 0.45 0.1
Collector to base voltage VCBO 30 V
1.27 1.27
Collector to emitter voltage VCEO 20 V
Emitter to base voltage VEBO 3 V
Collector current IC 50 mA
1 2 3
1:Emitter
Collector power dissipation PC 400 mW
2:Collector
3:Base
2.54 0.15
Junction temperature Tj 150 ?C
JEDEC:TO92
Storage temperature Tstg 55 ~ +150 ?C
EIAJ:SC43A
Electrical Characteristics (Ta=25?C)
Parameter Symbol Conditions min typ max Unit
Collector to base voltage VCBO IC =100 A, IE = 0 30 V
Emitter to base voltage VEBO IE = 10 A, IC = 0 3 V
Forward current transfer ratio hFE VCB = 10V, IE = 2mA 25
Base to emitter voltage VBE VCB = 10V, IE = 2mA 0.72 V
Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1 |
5.6. 2sc1213.pdf Size:23K _hitachi  |
 | 2SC1213, 2SC1213A
Silicon NPN Epitaxial
Application
Low frequency amplifier
Complementary pair with 2SA673 and 2SA673A
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SC1213, 2SC1213A
Absolute Maximum Ratings (Ta = 25C)
Item Symbol 2SC1213 2SC1213A Unit
Collector to base voltage VCBO 35 50 V
Collector to emitter voltage VCEO 35 50 V
Emitter to base voltage VEBO 44V
Collector current IC 500 500 mA
Collector power dissipation PC 400 400 mW
Junction temperature Tj 150 150 C
Storage temperature Tstg 55 to +150 55 to +150 C
Electrical Characteristics (Ta = 25C)
2SC1213 2SC1213A
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base V(BR)CBO 35 50 V IC = 10 A, IE = 0
breakdown voltage
Collector to emitter V(BR)CEO 35 50 V IC = 1 mA, RBE = ?
breakdown voltage
Emitter to base V(BR)EBO 4 4 V IE = 10 A, IC = 0
breakdown voltage
Collector cutoff current ICBO 0.5 0.5 A VCB = 20 V, IE = 0 |
5.7. 2sc1212.pdf Size:29K _hitachi  |
 | 2SC1212, 2SC1212A
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
TO-126 MOD
1. Emitter
2. Collector
3. Base
1
2
3
Absolute Maximum Ratings (Ta = 25C)
Ratings
Item Symbol 2SC1212 2SC1212A Unit
Collector to base voltage VCBO 50 80 V
Collector to emitter voltage VCEO 50 80 V
Emitter to base voltage VEBO 44V
Collector current IC 11A
Collector power dissipation PC 0.75 0.75 W
PC*1 88W
Junction temperature Tj 150 150 C
Storage temperature Tstg 55 to +150 55 to +150 C
Note: 1. Value at TC = 25 C
2SC1212, 2SC1212A
Electrical Characteristics (Ta = 25C)
2SC1212 2SC1212A
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base V(BR)CBO 50 80 V IC = 1 mA, IE = 0
breakdown voltage
Collector to emitter V(BR)CEO 50 80 V IC = 10 mA, RBE = ?
breakdown voltage
Emitter to base V(BR)EBO 4 4 V IE = 1 mA, IC = 0
breakdown voltage
Collector cutoff current ICBO 5 5 A VCB = 50 V, IE = 0
DC |
5.8. 2sc1214.pdf Size:22K _hitachi  |
 | 2SC1214
Silicon NPN Epitaxial
ADE-208-1050 (Z)
1st. Edition
Mar. 2001
Application
Low frequency amplifier
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SC1214
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 50 V
Collector to emitter voltage VCEO 50 V
Emitter to base voltage VEBO 4V
Collector current IC 500 mA
Collector power dissipation PC 600 mW
Junction temperature Tj 150 C
Storage temperature Tstg 55 to +150 C
Electrical Characteristics (Ta = 25C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown V(BR)CBO 50 V IC = 10 A, IE = 0
voltage
Collector to emitter breakdown V(BR)CEO 50 V IC = 1 mA, RBE = ?
voltage
Emitter to base breakdown V(BR)EBO 4 V IE = 10 A, IC = 0
voltage
Collector cutoff current ICBO 0.5 A VCB = 20 V, IE = 0
DC current transfer ratio hFE* 60 320 VCE = 3 V, IC = 10 mA
hFE 10 VCE = 3 V, IC = 500 mA
(pulse test)
Collector |
5.9. 2sc1213-2sc1213a.pdf Size:277K _secos  |
 | 2SC1213, 2SC1213A
NPN
General Purpose Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES TO-92
Low frequency amplifier
G H
Complementary pair with 2SA673 and 2SA673A
1Emitter
1
1
1
2Collector
2
2
2
3Base
3
3
3
CLASSIFICATION OF hFE(1)
J
A D
Product-Rank 2SC1213-B 2SC1213-C 2SC1213-D
Millimeter
REF.
Min. Max.
B
A 4.40 4.70
Product-Rank 2SC1213A-B 2SC1213A-C 2SC1213A-D
B 4.30 4.70
C 12.70 -
K
Range 60~120 100~200 160~320
D 3.30 3.81
E 0.36 0.56
F 0.36 0.51
G 1.27 TYP.
E C F
H 1.10 -
J 2.42 2.66
K 0.36 0.76
Collector
3
2
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter Symbol Rating Unit
2SC1213 35
Collector to Base Voltage VCBO V
2SC1213A 50
2SC1213 35
Collector to Emitter Voltage VCEO V
2SC1213A 50
Emitter to Base Voltage VEBO 4 V
Continuous Collector Current IC 500 mA
C |
5.10. 2sc1222.pdf Size:106K _usha  |
 | Transistors
2SC1222
|
5.11. 2sc1227.pdf Size:129K _inchange_semiconductor  |
 | Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1227
DESCRIPTION
·With TO-3 package
·High power dissipation
APPLICATIONS
·Suitable for use in clocked
voltatge converters
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
Fig.1 simplified outline (TO-3) and symbol
3 Collector
MAXIMUN RATINGS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 300 V
VCEO Collector-emitter voltage Open base 200 V
VEBO Emitter-base voltage Open collector 7 V
IC Collector current 10 A
IB Base current 3 A
PT Total power dissipation TC=25? 100 W
Tj Junction temperature 150 ?
Tstg Storage temperature -55~150 ?
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
Rth j-c Thermal resistance from junction to case 1.25 ?/W
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1227
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNI |
5.12. 2sc1295.pdf Size:127K _inchange_semiconductor  |
 | Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1295
DESCRIPTION ·
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·For TV horizontal deflection output
applications
PINNING(see fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
Fig.1 simplified outline (TO-3) and symbol
3 Collector
Absolute maximum ratings(Ta=?)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 1000 V
VCEO Collector-emitter voltage Open base 350 V
VEBO Emitter-base voltage Open collector 5 V
IC Collector current 2 A
PT Total power dissipation TC=25? 40 W
Tj Junction temperature 150 ?
Tstg Storage temperature -55~150 ?
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1295
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 350 V
V(BR)EBO Emitter-base breakdown votage IE=1mA |
5.13. 2sc1212_2sc1212a.pdf Size:146K _inchange_semiconductor  |
 | Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1212 2SC1212A
DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2SA743/743A APPLICATIONS Ў¤ For low frequency power amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
Ў¤
Absolute maximum ratings(Ta=25Ўж )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector- emitter voltage
VEBO IC
Emitter-base voltage Collector current
HAN INC
SEM GE
2SC1212A 2SC1212 2SC1212A
2SC1212
Open emitter
OND IC
CONDITIONS
TOR UC
VALUE 50 80 50 80
UNIT
V
Open base
V
Open collector
4 1
V A
Ta=25Ўж PD Total power dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature
0.75 W 8 150 -55Ў« +150 Ўж Ўж
|
5.14. 2sc1212a.pdf Size:102K _inchange_semiconductor  |
 | INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SC1212A
DESCRIPTION
·High Collector Current -IC= 1A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
·Good Linearity of hFE
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25?)
SYMBOL PARAMETER VALUE UNIT
VCBO Collector-Base Voltage 80 V
VCEO Collector-Emitter Voltage 80 V
VEBO Emitter-Base Voltage 4 V
IC Collector Current-Continuous 1 A
Collector Power Dissipation
8
@ TC=25?
PC W
Collector Power Dissipation
0.75
@ Ta=25?
TJ Junction Temperature 150 ?
Storage Temperature Range -55~150 ?
Tstg
isc Website:www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SC1212A
ELECTRICAL CHARACTERISTICS
TC=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 80 V
V(BR |
5.15. 2sc1235.pdf Size:127K _inchange_semiconductor  |
 | Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1235
DESCRIPTION
·With TO-66 package
·High collector-emitter voltage
: VCEO=300V
APPLICATIONS
·For use in line-operated color TV chroma
output circuits and sound output circuits.
PINNING
PIN DESCRIPTION
1 Base
2 Emitter
Fig.1 simplified outline (TO-66) and symbol
3 Collector
Absolute maximum ratings (Ta=25?)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 300 V
VCEO Collector-emitter voltage Open base 300 V
VEBO Emitter-base voltage Open collector 7 V
IC Collector current 0.1 A
PT Collector power dissipation TC=70? 6.5 W
Tj Junction temperature 150 ?
Tstg Storage temperature -55~150 ?
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1235
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CBO Collector-base breakdown voltage IC=50?A ;IE=0 300 V
V |
5.16. 2sc1226_2sc1226a.pdf Size:180K _inchange_semiconductor  |
 | Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1226 2SC1226A
DESCRIPTION
·With TO-202 package
·Complement to type 2SA699/699A
APPLICATIONS
·For medium power amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Collector
Fig.1 simplified outline (TO-202) and symbol
3 Emitter
Absolute maximum ratings (Ta=25?)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2SC1226 40
VCBO Collector-base voltage Open emitter V
2SC1226A 50
2SC1226 32
VCEO Collector-emitter voltage Open base V
2SC1226A 40
VEBO Emitter-base voltage Open collector 5 V
IC Collector current 2 A
ICM Collector current-peak 3 A
IB Base current 0.6 A
PC Collector power dissipation TC=25? 10 W
Tj Junction temperature 150 ?
Tstg Storage temperature -55~150 ?
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1226 2SC1226A
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX U |
See also transistors datasheet: 2SC1250
, 2SC1250R
, 2SC1251
, 2SC1252
, 2SC1253
, 2SC1254
, 2SC1255
, 2SC1256
, 2SA1015
, 2SC1258
, 2SC1259
, 2SC126
, 2SC1260
, 2SC1261
, 2SC1261F
, 2SC1261S
, 2SC1262
. Keywords| 2SC1257
Datasheet | 2SC1257
Datenblatt | 2SC1257
RoHS | 2SC1257
Distributor | | 2SC1257
Application Notes | 2SC1257
Component | 2SC1257
Circuit | 2SC1257
Schematic | | 2SC1257
Equivalent | 2SC1257
Cross Reference | 2SC1257
Data Sheet | 2SC1257
Fiche Technique |
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