2SC1400
Transistor Datasheet. Parameters and Characteristics. Type Designator: 2SC1400
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.25
Maximum collector-base voltage |Ucb|, V: 100
Maximum collector-emitter voltage |Uce|, V: 80
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.05
Maximum junction temperature (Tj), °C: 180
Transition frequency (ft), MHz: 50
Collector capacitance (Cc), pF: 7
Forward current transfer ratio (hFE), min: 225
Noise Figure, dB: - Package of 2SC1400
transistor: TO92
2SC1400
Equivalent Transistors - Cross-Reference Search 2SC1400
PDF document for downloads:
4.1. 2sc1403.pdf  Size:127K _inchange_semiconductor  |
 | Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1403
DESCRIPTION
·With TO-3 package
·Wide area of safe operation
APPLICATIONS
·For audio frequency power amplifier
applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
Fig.1 simplified outline (TO-3) and symbol
3 Collector
Absolute maximum ratings(Ta=?)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 160 V
VCEO Collector-emitter voltage Open base 100 V
VEBO Emitter-base voltage Open collector 5 V
IC Collector current 8 A
PC Collector power dissipation TC=25? 70 W
Tj Junction temperature 150 ?
Tstg Storage temperature -55~150 ?
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1403
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 100 V
V(BR)EBO Emitter-base breakdown voltage IE=1mA |
4.2. 2sc1402.pdf Size:127K _inchange_semiconductor  |
 | Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1402
DESCRIPTION
·With TO-3 package
·Wide area of safe operation
APPLICATIONS
·For audio frequency power amplifier
applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
Fig.1 simplified outline (TO-3) and symbol
3 Collector
Absolute maximum ratings(Ta=?)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 140 V
VCEO Collector-emitter voltage Open base 80 V
VEBO Emitter-base voltage Open collector 5 V
IC Collector current 8 A
PC Collector power dissipation TC=25? 70 W
Tj Junction temperature 150 ?
Tstg Storage temperature -55~150 ?
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1402
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 80 V
V(BR)EBO Emitter-base breakdown voltage IE=1mA ;I |
5.1. 2sc1473_e.pdf Size:51K _panasonic  |
 | Transistor
2SC1473, 2SC1473A
Silicon NPN triple diffusion planer type
For general amplification
Unit: mm
2SC1473 complementary to 2SA1018
5.0± 0.2 4.0± 0.2
2SC1473A complementary to 2SA1767
Features
High collector to emitter voltage VCEO.
High transition frequency fT.
Absolute Maximum Ratings (Ta=25?C)
Parameter Symbol Ratings Unit
+0.2 +0.2
0.45 –0.1 0.45 –0.1
Collector to 2SC1473 250
1.27 1.27
VCBO V
base voltage 2SC1473A 300
Collector to 2SC1473 200
VCEO V 1 2 3 1:Emitter
emitter voltage 2SC1473A 300
2:Collector
3:Base
Emitter to base voltage VEBO 7 V
2.54± 0.15
JEDEC:TO–92
Peak collector current ICP 100 mA
EIAJ:SC–43A
Collector current IC 70 mA
Collector power dissipation PC 750 mW
Junction temperature Tj 150 ?C
Storage temperature Tstg –55 ~ +150 ?C
Electrical Characteristics (Ta=25?C)
Parameter Symbol Conditions min typ max Unit
Collector cutoff 2SC1473 VCE = 120V, IB = 0 1
ICEO µ A
current 2SC1473A VCE = 120V, IB = 0 1
Collector to emitter 2 |
5.2. 2sc1473.pdf Size:47K _panasonic  |
 | Transistor
2SC1473, 2SC1473A
Silicon NPN triple diffusion planer type
For general amplification
Unit: mm
2SC1473 complementary to 2SA1018
5.0± 0.2 4.0± 0.2
2SC1473A complementary to 2SA1767
Features
High collector to emitter voltage VCEO.
High transition frequency fT.
Absolute Maximum Ratings (Ta=25?C)
Parameter Symbol Ratings Unit
+0.2 +0.2
0.45 –0.1 0.45 –0.1
Collector to 2SC1473 250
1.27 1.27
VCBO V
base voltage 2SC1473A 300
Collector to 2SC1473 200
VCEO V 1 2 3 1:Emitter
emitter voltage 2SC1473A 300
2:Collector
3:Base
Emitter to base voltage VEBO 7 V
2.54± 0.15
JEDEC:TO–92
Peak collector current ICP 100 mA
EIAJ:SC–43A
Collector current IC 70 mA
Collector power dissipation PC 750 mW
Junction temperature Tj 150 ?C
Storage temperature Tstg –55 ~ +150 ?C
Electrical Characteristics (Ta=25?C)
Parameter Symbol Conditions min typ max Unit
Collector cutoff 2SC1473 VCE = 120V, IB = 0 1
ICEO µ A
current 2SC1473A VCE = 120V, IB = 0 1
Collector to emitter 2 |
5.3. 2sc1472.pdf Size:47K _hitachi  |
 | 2SC1472(K)
Silicon NPN Epitaxial, Darlington
Application
High gain amplifier
Outline
TO-92 (1)
3
2
1. Emitter
1
2. Collector
3. Base
3
2
1
2SC1472 (K)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 40 V
Collector to emitter voltage VCEO 30 V
Emitter to base voltage VEBO 10 V
Collector current IC 300 mA
Collector peak current iC(peak) 500 mA
Collector power dissipation PC 500 mW
Junction temperature Tj 150 ° C
Storage temperature Tstg –55 to +150 ° C
2
2SC1472 (K)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown V(BR)CEO 30 — — V IC = 1 mA, RBE = ?
voltage
Collector cutoff current ICBO — — 100 nA VCB = 30 V, IE = 0
Emitter cutoff current IEBO — — 100 nA VEB = 10 V, IC = 0
DC current transfer ratio hFE1*1 2000 — 100000 IC = 10 mA, VCE = 5 V
hFE2*1 3000 — — IC = 100 mA, VCE = 5 V
(Pulse Test)
hFE3*1 3000 — — IC = 400 mA, VCE = 5 V
(Pulse T |
5.4. 2sc1426.pdf Size:340K _no 5.5. 2sc1475.pdf Size:126K _no 5.6. 2sc1413a.pdf Size:30K _wingshing  |
 | NPN TRIPLE DIFFUSED
2SC1413A PLANAR SILICON TRANSISTOR
COLOR TV HORIZONTAL OUTPUT
APPLICATIONS(No Damper Diode)
TO-3
High Collector-Base Voltage(VCBO=1500V)
High Speed Switching
ABSOLUTE MAXIMUM RATINGS (Ta=25°C
C)
C
C
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 1500 V
Collector-Emitter Voltage VCEO 800 V
Emitter-Base voltage VEBO 6 V
Collector Current (DC) IC 5 A
PC 50 W
Collector Dissipation (Tc=25°C)
Tj 150
Junction Temperature °C
Tstg -50~150
Storage Temperature
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C
C)
C
C
Characterristic Symbol Test Condition Min Typ Max Unit
Collector- Emitter Cutoff Current(VBE=0) ICES VCE= 600V , 1.0 mA
Collector Cutoff Current ICBO RBE=0 10 µA
Emitter Cutoff Current IEBO VCB= 800 V, IE=0 1.0 mA
DC Current Gain hFE VEB= 4V, IC=0 8
Collector- Emitter Saturation Voltage VCE(sat) VCE= 5V, IC=1A 5.0 V
IC=4A, IB=1A
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)279 |
5.7. 2sc1454.pdf Size:66K _wingshing  |
 | 2SC1454 NPN EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
TO-3
ABSOLUTE MAXIMUM RATINGS (T =25?
?)
?
?
A
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 300 V
Collector-Emitter Voltage VCEO 250 V
Emitter-Base voltage VEBO 7 V
Collector Current (DC) IC 40 A
Collector Dissipation (Tc=25? PC 50 W
?
?
?
Junction Temperature Tj 150 ?
?
?
?
Storage Temperature Tstg -50~150 ?
ELECTRICAL CHARACTERISTICS (TA=25?
?)
?
?
Characteristic Symbol Test Condition Min Typ Max Unit
Collector Cutoff Current ICBO VCB= 300V , IE=0 100 µA
Emitter Cutoff Current IEBO VEB= 7V , IC=0 100 µA
DC Current Gain hFE1 VCE= 5V , IC=1A 20
Collector- Emitter Saturation Voltage VCE(sat) IC=3A , IB=0.3A 1.0 V
Current Gain Bandwidth Product fT VCE= 5V , IC=0.5A 8 MHZ
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com
|
5.8. 2sc1431.pdf Size:127K _inchange_semiconductor  |
 | Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1431
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
APPLICATIONS
·For use in high frequency power
amplifier applications.
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
Fig.1 simplified outline (TO-66) and symbol
3 Collector
Absolute maximum ratings(Ta=?)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 110 V
VCEO Collector-emitter voltage Open base 110 V
VEBO Emitter-base voltage Open collector 5 V
IC Collector current 2 A
PD Total power dissipation TC=25? 23 W
Tj Junction temperature 150 ?
Tstg Storage temperature -55~150 ?
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1431
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=50mA ;IB=0 110 V
V(BR)EBO Emitter-base breakdown volta |
5.9. 2sc1450.pdf Size:127K _inchange_semiconductor  |
 | Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1450
DESCRIPTION
·With TO-66 package
·Wide area of safe operation
·High collector-emitter breakdown voltage
:VCEO=150V(min)
·Complement to type 2SA766
APPLICATIONS
·For power amplifier and vertical output
applications.
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
Fig.1 simplified outline (TO-66) and symbol
3 Collector
Absolute maximum ratings(Ta=?)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 150 V
VCEO Collector-emitter voltage Open base 150 V
VEBO Emitter-base voltage Open collector 5 V
IC Collector current 0.4 A
PD Total power dissipation TC=80? 20 W
Tj Junction temperature 150 ?
Tstg Storage temperature -65~200 ?
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1450
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO Coll |
5.10. 2sc1469.pdf Size:129K _inchange_semiconductor  |
 | Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1469
DESCRIPTION
·With TO-3 package
·High breakdown voltage
APPLICATIONS
·For high voltage ,fast switching
applications
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
Fig.1 simplified outline (TO-3) and symbol
3 Collector
Absolute maximum ratings(Ta=25?)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 500 V
VCEO Collector-emitter voltage Open base 400 V
VEBO Emitter-base voltage Open collector 7 V
IC Collector current 10 A
IB Base current 4 A
PT Total power dissipation TC?25? 100 W
Tj Junction temperature 200 ?
Tstg Storage temperature -65~200 ?
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
Rth j-c Thermal resistance from junction to case 1.25 ?/W
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1469
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MI |
5.11. 2sc1448.pdf Size:56K _inchange_semiconductor  |
 | Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1448
DESCRIPTION
·With TO-220 package
·High collector-emitter breakdown voltage
: VCEO=150V(min)
APPLICATIONS
·Power amplifier applications
·Vertical output applications
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
3 Emitter
Absolute maximum ratings (Ta=25?)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 150 V
VCEO Collector-emitter voltage Open base 150 V
VEBO Emitter-base voltage Open collector 5 V
IC Collector current 1.5 A
IB Base current 0.5 A
Ta=25? 1.5
PC Collector power dissipation W
TC=25? 25
Tj Junction temperature 150 ?
Tstg Storage temperature -55~150 ?
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1448
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage I |
5.12. 2sc1446.pdf Size:56K _inchange_semiconductor  |
 | Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1446
DESCRIPTION
·With TO-220 package
·High collector-emitter voltage
: VCEO=300V
APPLICATIONS
·For use in line-operated color TV chroma
output circuits and sound output circuits.
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-220) and symbol
3 Emitter
Absolute maximum ratings (Ta=25?)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 300 V
VCEO Collector-emitter voltage Open base 300 V
VEBO Emitter-base voltage Open collector 5 V
IC Collector current 0.15 A
PT Collector power dissipation TC=25? 10 W
Tj Junction temperature 150 ?
Tstg Storage temperature -55~150 ?
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1446
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CBO Collector-base breakd |
5.13. 2sc1449.pdf Size:113K _inchange_semiconductor  |
 | Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1449
DESCRIPTION
·With TO-126 package
·Low collector saturation voltage
APPLICATIONS
·Low frequency power amplification
·High frequency amplification
PINNING
PIN DESCRIPTION
1 Emitter
2 Collector
3 Base
Absolute maximum ratings (Ta=25?)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 40 V
VCEO Collector-emitter voltage Open base 35 V
VEBO Emitter-base voltage Open collector 5 V
IC Collector current 2 A
IB Base current 1 A
Ta=25? 1.0
PC Collector power dissipation W
TC=25? 10
Tj Junction temperature 150 ?
Tstg Storage temperature -55~150 ?
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1449
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CBO Collector-base breakdown voltage IC=100?A;IE=0 40 V
V(BR)CEO Collector-emitter breakdown voltage |
5.14. 2sc1413a.pdf Size:127K _inchange_semiconductor  |
 | Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1413A
DESCRIPTION ·
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·For TV horizontal deflection output
applications
PINNING(see fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
Fig.1 simplified outline (TO-3) and symbol
3 Collector
Absolute maximum ratings(Ta=?)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 1500 V
VCEO Collector-emitter voltage Open base 500 V
VEBO Emitter-base voltage Open collector 5 V
IC Collector current 5 A
PT Total power dissipation TC=25? 50 W
Tj Junction temperature 150 ?
Tstg Storage temperature -55~150 ?
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1413A
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 500 V
V(BR)EBO Emitter-base breakdown votage IE=1. |
5.15. 2sc1413.pdf Size:127K _inchange_semiconductor  |
 | Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1413
DESCRIPTION ·
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·For TV horizontal deflection output
applications
PINNING(see fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
Fig.1 simplified outline (TO-3) and symbol
3 Collector
Absolute maximum ratings(Ta=?)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 1200 V
VCEO Collector-emitter voltage Open base 500 V
VEBO Emitter-base voltage Open collector 5 V
IC Collector current 5 A
PT Total power dissipation TC=25? 50 W
Tj Junction temperature 150 ?
Tstg Storage temperature -55~150 ?
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1413
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 500 V
V(BR)EBO Emitter-base breakdown votage IE=1.0m |
5.16. 2sc1419.pdf Size:56K _inchange_semiconductor  |
 | Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1419
DESCRIPTION
·With TO-220 package
·Large collector power dissipation
APPLICATIONS
·For medium power amplifier applicattions
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-220) and symbol
3 Emitter
Absolute maximum ratings(Ta=25?)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 50 V
VCEO Collector-emitter voltage Open base 50 V
VEBO Emitter-base voltage Open collector 5 V
IC Collector current 2 A
ICM Collector current-peak 3 A
PC Collector power dissipation TC=25? 20 W
Tj Junction temperature 150 ?
Tstg Storage temperature -55~150 ?
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1419
CHARACTERISTICS
Tj=25? unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=30mA ,IB |
5.17. 2sc1440.pdf Size:127K _inchange_semiconductor  |
 | Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1440
DESCRIPTION
·With TO-3 package
·High power dissipation
APPLICATIONS
·Power amplifier applications
·Power switching applications
·DC-DC converters
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
Fig.1 simplified outline (TO-3) and symbol
3 Collector
Absolute maximum ratings(Ta=?)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 150 V
VCEO Collector-emitter voltage Open base 150 V
VEBO Emitter-base voltage Open collector 5 V
IC Collector current 15 A
IB Base current 4 A
PC Collector power dissipation TC=25? 150 W
Tj Junction temperature 150 ?
Tstg Storage temperature -55~200 ?
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1440
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 150 |
5.18. 2sc1433.pdf Size:127K _inchange_semiconductor  |
 | Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1433
DESCRIPTION ·
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·For high voltage switching power
amplifier applications
PINNING(see fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
Fig.1 simplified outline (TO-3) and symbol
3 Collector
Absolute maximum ratings(Ta=?)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 600 V
VCEO Collector-emitter voltage Open base 400 V
VEBO Emitter-base voltage Open collector 5 V
IC Collector current 5 A
PT Total power dissipation TC=25? 50 W
Tj Junction temperature 150 ?
Tstg Storage temperature -55~150 ?
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1433
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 400 V
V(BR)EBO Emitter-base breakdown votage |
5.19. 2sc1418.pdf Size:56K _inchange_semiconductor  |
 | Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1418
DESCRIPTION
·With TO-220 package
·Large collector power dissipation
APPLICATIONS
·For medium power amplifier applicattions
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-220) and symbol
3 Emitter
Absolute maximum ratings(Ta=25?)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 50 V
VCEO Collector-emitter voltage Open base 50 V
VEBO Emitter-base voltage Open collector 5 V
IC Collector current 2 A
ICM Collector current-peak 3 A
PC Collector power dissipation TC=25? 20 W
Tj Junction temperature 150 ?
Tstg Storage temperature -55~150 ?
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1418
CHARACTERISTICS
Tj=25? unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=30mA ,IB |
5.20. 2sc1447.pdf Size:56K _inchange_semiconductor  |
 | Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1447
DESCRIPTION
·With TO-220 package
·High breakdown voltage
·High transition frequency
APPLICATIONS
·For color TV chroma output applications
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-220) and symbol
3 Emitter
Absolute maximum ratings (Ta=25?)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 300 V
VCEO Collector-emitter voltage Open base 300 V
VEBO Emitter-base voltage Open collector 7 V
IC Collector current 0.15 A
PC Collector power dissipation TC=25? 20 W
Tj Junction temperature 150 ?
Tstg Storage temperature -55~150 ?
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1447
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CBO Collector-base breakdown voltage IC=10?A ;IE=0 300 V
V(BR)C |
5.21. 2sc1456.pdf Size:127K _inchange_semiconductor  |
 | Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1456
DESCRIPTION
·With TO-66 package
·High collector-emitter voltage
: VCEO=300V
APPLICATIONS
·For use in line-operated color TV chroma
output circuits and sound output circuits.
PINNING
PIN DESCRIPTION
1 Base
2 Emitter
Fig.1 simplified outline (TO-66) and symbol
3 Collector
Absolute maximum ratings (Ta=25?)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 300 V
VCEO Collector-emitter voltage Open base 300 V
VEBO Emitter-base voltage Open collector 5 V
IC Collector current 0.15 A
PT Collector power dissipation TC=25? 10 W
Tj Junction temperature 150 ?
Tstg Storage temperature -55~150 ?
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1456
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CBO Collector-base breakdown voltage IC=10?A ;IE=0 300 V
V |
5.22. 2sc1445.pdf Size:127K _inchange_semiconductor  |
 | Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1445
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For switching and wide-band
amplifier applications.
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
Fig.1 simplified outline (TO-66) and symbol
3 Collector
Absolute maximum ratings(Ta=?)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 100 V
VCEO Collector-emitter voltage Open base 80 V
VEBO Emitter-base voltage Open collector 6 V
IC Collector current 6 A
IB Base current 1 A
PD Total power dissipation TC=25? 40 W
Tj Junction temperature 150 ?
Tstg Storage temperature -65~200 ?
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1445
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=10 |
5.23. 2sc1454.pdf Size:127K _inchange_semiconductor  |
 | Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1454
DESCRIPTION
·With TO-3 package
·High breakdown voltage:VCEO=250V(min)
APPLICATIONS
·For use in low frequency power
amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
Fig.1 simplified outline (TO-3) and symbol
3 Collector
Absolute maximum ratings(Ta=?)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 300 V
VCEO Collector-emitter voltage Open base 250 V
VEBO Emitter-base voltage Open collector 7 V
IC Collector current 4 A
PC Collector power dissipation TC=25? 50 W
Tj Junction temperature 150 ?
Tstg Storage temperature -55~150 ?
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1454
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 250 V
VCEsat Collector-emitter satura |
5.24. 2sc1444.pdf Size:127K _inchange_semiconductor  |
 | Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1444
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For switching and wide-band
amplifier applications.
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
Fig.1 simplified outline (TO-66) and symbol
3 Collector
Absolute maximum ratings(Ta=?)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 80 V
VCEO Collector-emitter voltage Open base 60 V
VEBO Emitter-base voltage Open collector 6 V
IC Collector current 6 A
IB Base current 1 A
PD Total power dissipation TC=25? 40 W
Tj Junction temperature 150 ?
Tstg Storage temperature -55~150 ?
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1444
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=30m |
See also transistors datasheet: 2SC1398
, 2SC1398A
, 2SC1399
, 2SC1399E
, 2SC1399F
, 2SC1399U
, 2SC14
, 2SC140
, 2SA1015
, 2SC1400E
, 2SC1400F
, 2SC1400U
, 2SC1401
, 2SC1403
, 2SC1403A
, 2SC1404
, 2SC1405
. Keywords| 2SC1400
Datasheet | 2SC1400
Datenblatt | 2SC1400
RoHS | 2SC1400
Distributor | | 2SC1400
Application Notes | 2SC1400
Component | 2SC1400
Circuit | 2SC1400
Schematic | | 2SC1400
Equivalent | 2SC1400
Cross Reference | 2SC1400
Data Sheet | 2SC1400
Fiche Technique |
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