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2SC1400
  2SC1400
  2SC1400
 
2SC1400
  2SC1400
  2SC1400
 
2SC1400
  2SC1400
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
2SC1400 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SC1400 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC1400

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.25

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.05

Maksimalna temperatura (Tj), °C: 180

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF: 7

Forward current transfer ratio (hFE), min: 225

Noise Figure, dB: -

Package of 2SC1400 transistor: TO92

2SC1400 Equivalent Transistors - Cross-Reference Search

2SC1400 PDF doc:

4.1. 2sc1402.pdf Size:127K _inchange_semiconductor

2SC1400
2SC1400
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1402 DESCRIPTION ·With TO-3 package ·Wide area of safe operation APPLICATIONS ·For audio frequency power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 140 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 8 A PC Collector power dissipation TC=25? 70 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1402 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;I

4.2. 2sc1403.pdf Size:127K _inchange_semiconductor

2SC1400
2SC1400
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1403 DESCRIPTION ·With TO-3 package ·Wide area of safe operation APPLICATIONS ·For audio frequency power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 8 A PC Collector power dissipation TC=25? 70 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1403 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 100 V V(BR)EBO Emitter-base breakdown voltage IE=1mA

5.1. 2sc1473_e.pdf Size:51K _panasonic

2SC1400
2SC1400
Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification Unit: mm 2SC1473 complementary to 2SA1018 5.0 0.2 4.0 0.2 2SC1473A complementary to 2SA1767 Features High collector to emitter voltage VCEO. High transition frequency fT. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to 2SC1473 250 1.27 1.27 VCBO V base voltage 2SC1473A 300 Collector to 2SC1473 200 VCEO V 1 2 3 1:Emitter emitter voltage 2SC1473A 300 2:Collector 3:Base Emitter to base voltage VEBO 7 V 2.54 0.15 JEDEC:TO92 Peak collector current ICP 100 mA EIAJ:SC43A Collector current IC 70 mA Collector power dissipation PC 750 mW Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff 2SC1473 VCE = 120V, IB = 0 1 ICEO A current 2SC1473A VCE = 120V, IB = 0 1 Collector to emitter 2

5.2. 2sc1473.pdf Size:47K _panasonic

2SC1400
2SC1400
Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification Unit: mm 2SC1473 complementary to 2SA1018 5.0 0.2 4.0 0.2 2SC1473A complementary to 2SA1767 Features High collector to emitter voltage VCEO. High transition frequency fT. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to 2SC1473 250 1.27 1.27 VCBO V base voltage 2SC1473A 300 Collector to 2SC1473 200 VCEO V 1 2 3 1:Emitter emitter voltage 2SC1473A 300 2:Collector 3:Base Emitter to base voltage VEBO 7 V 2.54 0.15 JEDEC:TO92 Peak collector current ICP 100 mA EIAJ:SC43A Collector current IC 70 mA Collector power dissipation PC 750 mW Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff 2SC1473 VCE = 120V, IB = 0 1 ICEO A current 2SC1473A VCE = 120V, IB = 0 1 Collector to emitter 2

5.3. 2sc1472.pdf Size:47K _hitachi

2SC1400
2SC1400
2SC1472(K) Silicon NPN Epitaxial, Darlington Application High gain amplifier Outline TO-92 (1) 3 2 1. Emitter 1 2. Collector 3. Base 3 2 1 2SC1472 (K) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 10 V Collector current IC 300 mA Collector peak current iC(peak) 500 mA Collector power dissipation PC 500 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C 2 2SC1472 (K) Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter breakdown V(BR)CEO 30 V IC = 1 mA, RBE = ? voltage Collector cutoff current ICBO 100 nA VCB = 30 V, IE = 0 Emitter cutoff current IEBO 100 nA VEB = 10 V, IC = 0 DC current transfer ratio hFE1*1 2000 100000 IC = 10 mA, VCE = 5 V hFE2*1 3000 IC = 100 mA, VCE = 5 V (Pulse Test) hFE3*1 3000 IC = 400 mA, VCE = 5 V (Pulse T

5.4. 2sc1475.pdf Size:126K _no

2SC1400
2SC1400

5.5. 2sc1426.pdf Size:340K _no

2SC1400
2SC1400

5.6. 2sc1454.pdf Size:66K _wingshing

2SC1400
2SC1400
2SC1454 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-3 ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 250 V Emitter-Base voltage VEBO 7 V Collector Current (DC) IC 40 A Collector Dissipation (Tc=25? PC 50 W ? ? ? Junction Temperature Tj 150 ? ? ? ? Storage Temperature Tstg -50~150 ? ELECTRICAL CHARACTERISTICS (TA=25? ?) ? ? Characteristic Symbol Test Condition Min Typ Max Unit Collector Cutoff Current ICBO VCB= 300V , IE=0 100 A Emitter Cutoff Current IEBO VEB= 7V , IC=0 100 A DC Current Gain hFE1 VCE= 5V , IC=1A 20 Collector- Emitter Saturation Voltage VCE(sat) IC=3A , IB=0.3A 1.0 V Current Gain Bandwidth Product fT VCE= 5V , IC=0.5A 8 MHZ Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153 Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com

5.7. 2sc1413a.pdf Size:30K _wingshing

2SC1400
2SC1400
NPN TRIPLE DIFFUSED 2SC1413A PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(No Damper Diode) TO-3 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (Ta=25C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 5 A PC 50 W Collector Dissipation (Tc=25C) Tj 150 Junction Temperature C Tstg -50~150 Storage Temperature C ELECTRICAL CHARACTERISTICS (Ta=25C C) C C Characterristic Symbol Test Condition Min Typ Max Unit Collector- Emitter Cutoff Current(VBE=0) ICES VCE= 600V , 1.0 mA Collector Cutoff Current ICBO RBE=0 10 A Emitter Cutoff Current IEBO VCB= 800 V, IE=0 1.0 mA DC Current Gain hFE VEB= 4V, IC=0 8 Collector- Emitter Saturation Voltage VCE(sat) VCE= 5V, IC=1A 5.0 V IC=4A, IB=1A Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)279

5.8. 2sc1418.pdf Size:56K _inchange_semiconductor

2SC1400
2SC1400
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1418 DESCRIPTION ·With TO-220 package ·Large collector power dissipation APPLICATIONS ·For medium power amplifier applicattions PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 50 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 2 A ICM Collector current-peak 3 A PC Collector power dissipation TC=25? 20 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1418 CHARACTERISTICS Tj=25? unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30mA ,IB

5.9. 2sc1431.pdf Size:127K _inchange_semiconductor

2SC1400
2SC1400
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1431 DESCRIPTION ·With TO-66 package ·Excellent safe operating area APPLICATIONS ·For use in high frequency power amplifier applications. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 110 V VCEO Collector-emitter voltage Open base 110 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 2 A PD Total power dissipation TC=25? 23 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1431 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=50mA ;IB=0 110 V V(BR)EBO Emitter-base breakdown volta

5.10. 2sc1450.pdf Size:127K _inchange_semiconductor

2SC1400
2SC1400
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1450 DESCRIPTION ·With TO-66 package ·Wide area of safe operation ·High collector-emitter breakdown voltage :VCEO=150V(min) ·Complement to type 2SA766 APPLICATIONS ·For power amplifier and vertical output applications. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 0.4 A PD Total power dissipation TC=80? 20 W Tj Junction temperature 150 ? Tstg Storage temperature -65~200 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1450 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Coll

5.11. 2sc1454.pdf Size:127K _inchange_semiconductor

2SC1400
2SC1400
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1454 DESCRIPTION ·With TO-3 package ·High breakdown voltage:VCEO=250V(min) APPLICATIONS ·For use in low frequency power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 250 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 4 A PC Collector power dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1454 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 250 V VCEsat Collector-emitter satura

5.12. 2sc1444.pdf Size:127K _inchange_semiconductor

2SC1400
2SC1400
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1444 DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For switching and wide-band amplifier applications. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 6 A IB Base current 1 A PD Total power dissipation TC=25? 40 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1444 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=30m

5.13. 2sc1445.pdf Size:127K _inchange_semiconductor

2SC1400
2SC1400
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1445 DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For switching and wide-band amplifier applications. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 6 A IB Base current 1 A PD Total power dissipation TC=25? 40 W Tj Junction temperature 150 ? Tstg Storage temperature -65~200 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1445 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=10

5.14. 2sc1449.pdf Size:113K _inchange_semiconductor

2SC1400
2SC1400
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1449 DESCRIPTION ·With TO-126 package ·Low collector saturation voltage APPLICATIONS ·Low frequency power amplification ·High frequency amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 40 V VCEO Collector-emitter voltage Open base 35 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 2 A IB Base current 1 A Ta=25? 1.0 PC Collector power dissipation W TC=25? 10 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1449 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=100?A;IE=0 40 V V(BR)CEO Collector-emitter breakdown voltage

5.15. 2sc1413.pdf Size:127K _inchange_semiconductor

2SC1400
2SC1400
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1413 DESCRIPTION · ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For TV horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1200 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 5 A PT Total power dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1413 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 500 V V(BR)EBO Emitter-base breakdown votage IE=1.0m

5.16. 2sc1456.pdf Size:127K _inchange_semiconductor

2SC1400
2SC1400
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1456 DESCRIPTION ·With TO-66 package ·High collector-emitter voltage : VCEO=300V APPLICATIONS ·For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 0.15 A PT Collector power dissipation TC=25? 10 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1456 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=10?A ;IE=0 300 V V

5.17. 2sc1419.pdf Size:56K _inchange_semiconductor

2SC1400
2SC1400
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1419 DESCRIPTION ·With TO-220 package ·Large collector power dissipation APPLICATIONS ·For medium power amplifier applicattions PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 50 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 2 A ICM Collector current-peak 3 A PC Collector power dissipation TC=25? 20 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1419 CHARACTERISTICS Tj=25? unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30mA ,IB

5.18. 2sc1447.pdf Size:56K _inchange_semiconductor

2SC1400
2SC1400
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1447 DESCRIPTION ·With TO-220 package ·High breakdown voltage ·High transition frequency APPLICATIONS ·For color TV chroma output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 0.15 A PC Collector power dissipation TC=25? 20 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1447 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=10?A ;IE=0 300 V V(BR)C

5.19. 2sc1448.pdf Size:56K _inchange_semiconductor

2SC1400
2SC1400
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1448 DESCRIPTION ·With TO-220 package ·High collector-emitter breakdown voltage : VCEO=150V(min) APPLICATIONS ·Power amplifier applications ·Vertical output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 1.5 A IB Base current 0.5 A Ta=25? 1.5 PC Collector power dissipation W TC=25? 25 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1448 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I

5.20. 2sc1433.pdf Size:127K _inchange_semiconductor

2SC1400
2SC1400
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1433 DESCRIPTION · ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For high voltage switching power amplifier applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 5 A PT Total power dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1433 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 400 V V(BR)EBO Emitter-base breakdown votage

5.21. 2sc1446.pdf Size:56K _inchange_semiconductor

2SC1400
2SC1400
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1446 DESCRIPTION ·With TO-220 package ·High collector-emitter voltage : VCEO=300V APPLICATIONS ·For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 0.15 A PT Collector power dissipation TC=25? 10 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1446 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakd

5.22. 2sc1469.pdf Size:129K _inchange_semiconductor

2SC1400
2SC1400
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1469 DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·For high voltage ,fast switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A IB Base current 4 A PT Total power dissipation TC?25? 100 W Tj Junction temperature 200 ? Tstg Storage temperature -65~200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance from junction to case 1.25 ?/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1469 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MI

5.23. 2sc1413a.pdf Size:127K _inchange_semiconductor

2SC1400
2SC1400
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1413A DESCRIPTION · ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For TV horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 5 A PT Total power dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1413A CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 500 V V(BR)EBO Emitter-base breakdown votage IE=1.

5.24. 2sc1440.pdf Size:127K _inchange_semiconductor

2SC1400
2SC1400
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1440 DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATIONS ·Power amplifier applications ·Power switching applications ·DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 15 A IB Base current 4 A PC Collector power dissipation TC=25? 150 W Tj Junction temperature 150 ? Tstg Storage temperature -55~200 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1440 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 150

See also transistors datasheet: 2SC1398 , 2SC1398A , 2SC1399 , 2SC1399E , 2SC1399F , 2SC1399U , 2SC14 , 2SC140 , S9012 , 2SC1400E , 2SC1400F , 2SC1400U , 2SC1401 , 2SC1403 , 2SC1403A , 2SC1404 , 2SC1405 .

Keywords

 2SC1400 Datasheet  2SC1400 Datenblatt  2SC1400 RoHS  2SC1400 Distributor
 2SC1400 Application Notes  2SC1400 Component  2SC1400 Circuit  2SC1400 Schematic
 2SC1400 Equivalent  2SC1400 Cross Reference  2SC1400 Data Sheet  2SC1400 Fiche Technique

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