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2N1711 Transistor (IC) Datasheet. Cross Reference Search. 2N1711 Equivalent

Type Designator: 2N1711

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.8

Maximum collector-base voltage |Ucb|, V: 75

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 0.6

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz: 70

Collector capacitance (Cc), pF: 25

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of 2N1711 transistor: TO5

2N1711 Transistor Equivalent Substitute - Cross-Reference Search

2N1711 PDF doc:

1.1. 2n1711.pdf Size:623K _rca

2N1711
2N1711

1.2. 2n1711_cnv_2.pdf Size:51K _philips

2N1711
2N1711

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1711 NPN medium power transistor 1997 May 28 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN medium power transistor 2N1711 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 50 V). 1 emitter 2

1.3. 2n1711.pdf Size:46K _st

2N1711
2N1711

2N1711 EPITAXIAL PLANAR NPN DESCRIPTION The 2N1711 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intented for use in high performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value

1.4. 2n1711_.pdf Size:47K _st

2N1711
2N1711

2N1711 EPITAXIAL PLANAR NPN DESCRIPTION The 2N1711 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intented for use in high performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value

1.5. 2n1613_2n1711_2n1893.pdf Size:64K _central

2N1711
2N1711

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.6. 2n956_2n718a_2n1711.pdf Size:127K _bocasemi

2N1711
2N1711

http://www.bocasemi.com Boca Semiconductor Corp. BSC http://www.bocasemi.com

1.7. 2n1711.pdf Size:74K _cdil

2N1711
2N1711

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N1711 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage, RBE < 10 VCER 50 V Collector Base Voltage VCBO 75 V Emitter Base Voltage VEBO 7.0 V Power Dissipation at Ta=25?C PD 800 mW Dera

1.8. 2n1613_2n1711.pdf Size:92K _microelectronics

2N1711
2N1711

See also transistors datasheet: 2N1704 , 2N1705 , 2N1706 , 2N1707 , 2N1708 , 2N1708A , 2N1709 , 2N1710 , AC128 , 2N1711-46 , 2N1711A , 2N1711B , 2N1711L , 2N1711S , 2N1713 , 2N1714 , 2N1715 .

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