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2N1711
  2N1711
  2N1711
 
2N1711
  2N1711
  2N1711
 
2N1711
  2N1711
 
 
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100DA025D .. 2N1011
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2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU508DXI
BU508FI .. BUL6822
BUL6822A .. BUV39
BUV40 .. BUX80/6
BUX80/7 .. C9080
C9081 .. CEN-U45
CEN-U51 .. CJD3055
CJD31C .. CMPT918
CMPT930 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM7
D44VM8 .. DKS21
DKS22 .. DTA123EUA
DTA123J .. DTC143XE
DTC143XEA .. DZT491
DZT5401 .. ECG351
ECG352 .. ESM117
ESM118 .. FB3727
FB3728 .. FJV3113R
FJV3114R .. FMMT4964
FMMT497 .. FT400B
FT401 .. GC112
GC115 .. GES4400
GES4401 .. GI2715
GI2716 .. GT309D
GT309E .. HA7540
HA7541 .. HN1C01F
HN1C01FE .. HUN5236
HUN5237 .. JC559A
JC559C .. KF630D
KF630S .. KRA729U
KRA730E .. KRC662U
KRC663F .. KSA643
KSA643-G .. KSC2682-Y
KSC2688 .. KSD2012
KSD2012-G .. KSR2102
KSR2103 .. KT315E-1
KT315E1 .. KT610A
KT610B .. KT8127A
KT8127A-1 .. KT852G
KT852V .. KTA1703
KTA1704 .. KTC813U
KTC814U .. MA287
MA393 .. MH0812
MH0813 .. MJ8503
MJ8504 .. MJE41
MJE41A .. MM4033
MM4036 .. MMBT4403WT1
MMBT4888 .. MMUN2134LT1
MMUN2134LT2 .. MP3905R
MP3906 .. MPQ5447
MPQ5449 .. MPS834
MPS835 .. MRF427
MRF428 .. MZT127
MZT2955 .. NB011FJ
NB011FK .. NB123F
NB123FH .. NB323H
NB323K .. NPS3721
NPS3725 .. NSS40300
NSS40300DD .. OC466K
OC467 .. PBSS306NX
PBSS306NZ .. PEMB30
PEMB4 .. PN4250A
PN4257 .. PZTA14
PZTA27 .. RN1307
RN1308 .. RN2401
RN2402 .. RT484
RT497M .. SD3866AF
SD3960F .. SGS130
SGS131 .. SRA2202EF
SRA2202M .. STA3360PI
STA723D .. SUT161G
SUT290 .. TA1703B
TA1704 .. TI804
TI805 .. TIPL13004
TIPL13005 .. TN3398
TN3402 .. TP4258
TP4258A .. UMG1N
UMG2N .. UN6214
UN6215Q .. ZT1486A
ZT1487 .. ZTX342L
ZTX342M .. ZXTN25100DZ
ZXTN26020DMF .. ZXTPS720MC
 
2N1711 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2N1711 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N1711

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.8

Maximum collector-base voltage |Ucb|, V: 75

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 0.6

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz: 70

Collector capacitance (Cc), pF: 25

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of 2N1711 transistor: TO5

2N1711 Equivalent Transistors - Cross-Reference Search

2N1711 PDF doc:

1.1. 2n1711.pdf Size:623K _rca

2N1711
2N1711

1.2. 2n1711_cnv_2.pdf Size:51K _philips

2N1711
2N1711
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1711 NPN medium power transistor 1997 May 28 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN medium power transistor 2N1711 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 50 V). 1 emitter 2 base APPLICATIONS 3 collector, connected to case DC and wideband amplifiers. 1 DESCRIPTION handbook, halfpage 3 2 NPN medium power transistor in a TO-39 metal package. 2 1 3 MAM317 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 75 V VCEO collector-emitter voltage open base - 50 V ICM peak collector current - 1A Ptot total power dissipation Tamb ? 25 C - 0.8 W hFE DC current gain IC = 150 mA; VCE = 10 V 100 300 fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 M

1.3. 2n1711.pdf Size:46K _st

2N1711
2N1711
2N1711 EPITAXIAL PLANAR NPN DESCRIPTION The 2N1711 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intented for use in high performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 75 V V 50 V CER Collector-Emitter Voltage (R ? 10?) BE VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 500 mA Ptot Total Dissipation at Tamb ? 25 oC 0.8 W 3 W at TC ? 25 oC 1.7 W at T ? 100 oC C o T Storage Temperature -65 to 175 C stg o T Max. Operating Junction Temperature 175 C j 1/4 September 2002 2N1711 THERMAL DATA o Rthj-case Thermal Resistance Junction-Case Max 50 C/W o R Thermal Resistance Junction-Ambient Max 187.5 C/W thj-amb ELECTRICAL CHARACTERISTICS (T = 25 oC unless otherwise specified) case

1.4. 2n1711_.pdf Size:47K _st

2N1711
2N1711
2N1711 EPITAXIAL PLANAR NPN DESCRIPTION The 2N1711 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intented for use in high performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 75 V V 50 V CER Collector-Emitter Voltage (R ? 10?) BE VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 500 mA Ptot Total Dissipation at Tamb ? 25 oC 0.8 W 3 W at TC ? 25 oC 1.7 W at T ? 100 oC C o T Storage Temperature -65 to 175 C stg o T Max. Operating Junction Temperature 175 C j 1/4 September 2002 2N1711 THERMAL DATA o Rthj-case Thermal Resistance Junction-Case Max 50 C/W o R Thermal Resistance Junction-Ambient Max 187.5 C/W thj-amb ELECTRICAL CHARACTERISTICS (T = 25 oC unless otherwise specified) case

1.5. 2n1613_2n1711_2n1893.pdf Size:64K _central

2N1711
2N1711
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.6. 2n956_2n718a_2n1711.pdf Size:127K _bocasemi

2N1711
2N1711
http://www.bocasemi.com Boca Semiconductor Corp. BSC http://www.bocasemi.com

1.7. 2n1711.pdf Size:74K _cdil

2N1711
2N1711
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N1711 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage, RBE < 10 VCER 50 V Collector Base Voltage VCBO 75 V Emitter Base Voltage VEBO 7.0 V Power Dissipation at Ta=25?C PD 800 mW Derate Above 25?C 4.57 mW/ ?C Power Dissipation at Tc=25?C PD 3.0 W Derate Above 25?C 17.15 mW/ ?C Operating and Storage Junction Tj, Tstg - 65 to +200 ?C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector Emitter Voltage VCER IC=1mA, RBE <10 ? 50 V Collector Base Voltage VCBO IC=100µA, IE=0 75 V Emitter Base Voltage VEBO IE=100µA, IC=0 7.0 V Collector Cut Off Current ICBO VCB=60V, IE=0 10 nA VCB=60V, IE=0, Ta=150?C 10 µA Emitter Cut Off Current IEBO VEB=5V, IC=0 5.0 nA DC Current Gain h

1.8. 2n1613_2n1711.pdf Size:92K _microelectronics

2N1711
2N1711

See also transistors datasheet: 2N1704 , 2N1705 , 2N1706 , 2N1707 , 2N1708 , 2N1708A , 2N1709 , 2N1710 , AC128 , 2N1711-46 , 2N1711A , 2N1711B , 2N1711L , 2N1711S , 2N1713 , 2N1714 , 2N1715 .

Keywords

 2N1711 Datasheet  2N1711 Datenblatt  2N1711 RoHS  2N1711 Distributor
 2N1711 Application Notes  2N1711 Component  2N1711 Circuit  2N1711 Schematic
 2N1711 Equivalent  2N1711 Cross Reference  2N1711 Data Sheet  2N1711 Fiche Technique

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