All Transistors Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
2N1711
  2N1711
  2N1711
 
2N1711
  2N1711
  2N1711
 
2N1711
  2N1711
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
2N1711 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2N1711 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N1711

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.8

Maximum collector-base voltage |Ucb|, V: 75

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 0.6

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz: 70

Collector capacitance (Cc), pF: 25

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of 2N1711 transistor: TO5

2N1711 Equivalent Transistors - Cross-Reference Search

2N1711 PDF doc:

1.1. 2n1711.pdf Size:623K _rca

2N1711
2N1711

1.2. 2n1711_cnv_2.pdf Size:51K _philips

2N1711
2N1711
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1711 NPN medium power transistor 1997 May 28 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN medium power transistor 2N1711 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 50 V). 1 emitter 2 base APPLICATIONS 3 collector, connected to case DC and wideband amplifiers. 1 DESCRIPTION handbook, halfpage 3 2 NPN medium power transistor in a TO-39 metal package. 2 1 3 MAM317 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 75 V VCEO collector-emitter voltage open base - 50 V ICM peak collector current - 1A Ptot total power dissipation Tamb ? 25 C - 0.8 W hFE DC current gain IC = 150 mA; VCE = 10 V 100 300 fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 M

1.3. 2n1711_.pdf Size:47K _st

2N1711
2N1711
2N1711 EPITAXIAL PLANAR NPN DESCRIPTION The 2N1711 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intented for use in high performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 75 V V 50 V CER Collector-Emitter Voltage (R ? 10?) BE VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 500 mA Ptot Total Dissipation at Tamb ? 25 oC 0.8 W 3 W at TC ? 25 oC 1.7 W at T ? 100 oC C o T Storage Temperature -65 to 175 C stg o T Max. Operating Junction Temperature 175 C j 1/4 September 2002 2N1711 THERMAL DATA o Rthj-case Thermal Resistance Junction-Case Max 50 C/W o R Thermal Resistance Junction-Ambient Max 187.5 C/W thj-amb ELECTRICAL CHARACTERISTICS (T = 25 oC unless otherwise specified) case

1.4. 2n1711.pdf Size:46K _st

2N1711
2N1711
2N1711 EPITAXIAL PLANAR NPN DESCRIPTION The 2N1711 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intented for use in high performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 75 V V 50 V CER Collector-Emitter Voltage (R ? 10?) BE VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 500 mA Ptot Total Dissipation at Tamb ? 25 oC 0.8 W 3 W at TC ? 25 oC 1.7 W at T ? 100 oC C o T Storage Temperature -65 to 175 C stg o T Max. Operating Junction Temperature 175 C j 1/4 September 2002 2N1711 THERMAL DATA o Rthj-case Thermal Resistance Junction-Case Max 50 C/W o R Thermal Resistance Junction-Ambient Max 187.5 C/W thj-amb ELECTRICAL CHARACTERISTICS (T = 25 oC unless otherwise specified) case

1.5. 2n1613_2n1711_2n1893.pdf Size:64K _central

2N1711
2N1711
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.6. 2n956_2n718a_2n1711.pdf Size:127K _bocasemi

2N1711
2N1711
http://www.bocasemi.com Boca Semiconductor Corp. BSC http://www.bocasemi.com

1.7. 2n1711.pdf Size:74K _cdil

2N1711
2N1711
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N1711 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage, RBE < 10 VCER 50 V Collector Base Voltage VCBO 75 V Emitter Base Voltage VEBO 7.0 V Power Dissipation at Ta=25?C PD 800 mW Derate Above 25?C 4.57 mW/ ?C Power Dissipation at Tc=25?C PD 3.0 W Derate Above 25?C 17.15 mW/ ?C Operating and Storage Junction Tj, Tstg - 65 to +200 ?C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector Emitter Voltage VCER IC=1mA, RBE <10 ? 50 V Collector Base Voltage VCBO IC=100µA, IE=0 75 V Emitter Base Voltage VEBO IE=100µA, IC=0 7.0 V Collector Cut Off Current ICBO VCB=60V, IE=0 10 nA VCB=60V, IE=0, Ta=150?C 10 µA Emitter Cut Off Current IEBO VEB=5V, IC=0 5.0 nA DC Current Gain h

1.8. 2n1613_2n1711.pdf Size:92K _microelectronics

2N1711
2N1711

See also transistors datasheet: 2N1704 , 2N1705 , 2N1706 , 2N1707 , 2N1708 , 2N1708A , 2N1709 , 2N1710 , AC128 , 2N1711-46 , 2N1711A , 2N1711B , 2N1711L , 2N1711S , 2N1713 , 2N1714 , 2N1715 .

Keywords

 2N1711 Datasheet  2N1711 Datenblatt  2N1711 RoHS  2N1711 Distributor
 2N1711 Application Notes  2N1711 Component  2N1711 Circuit  2N1711 Schematic
 2N1711 Equivalent  2N1711 Cross Reference  2N1711 Data Sheet  2N1711 Fiche Technique

(C) 2005 All Right reserved Bipolar | | MOSFET | | IGBT | | Manufacturer Sites | | SMD Code | | Packages | | Contact alltransistors[@]gmail.com