All Transistors. 2SC180H Datasheet

 

2SC180H Transistor. Datasheet pdf. Equivalent

Type Designator: 2SC180H

Material of Transistor: Ge

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.12 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Emitter-Base Voltage |Veb|: 20 V

Maximum Collector Current |Ic max|: 0.4 A

Max. Operating Junction Temperature (Tj): 85 °C

Transition Frequency (ft): 2 MHz

Collector Capacitance (Cc): 40 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO1

2SC180H Transistor Equivalent Substitute - Cross-Reference Search

2SC180H Datasheet PDF:

4.1. 2sc1809.pdf Size:86K _rohm

2SC180H
2SC180H

5.1. 2sc1815lt1.pdf Size:122K _update

2SC180H

2SC1815LT1 NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Complement to 2SA1015 * Collector Current :Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo 60 V Collector-Emitter Voltage Vceo 50 V Emitter-Base Voltage Vebo 5 V PIN: 1 2 3 Collector Current Ic 150 mA STYLE Collector Dissipation Ta=25℃* PD 225 mW NO

5.2. 2sc1846_3da1846.pdf Size:853K _update

2SC180H
2SC180H

2SC1846(3DA1846) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于中功率放大。 Purpose: Medium power amplifier. 特点:V 低,与 2SA885(3CA885)互补可得到 3W 输出。 CE(sat) Features: Low V ,3W output in complementary pair with 2SA885(3CA885). CE(sat) 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 45 V

5.3. 2sc1819m.pdf Size:84K _update

2SC180H
2SC180H

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1819M DESCRIPTION ·With TO-220 package ·High VCEO ·Large PC APPLICATIONS ·For use in line-operated color TV chroma output circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Absolute maximum ratings (Ta

5.4. 2sc1815-bl-gr-o-y.pdf Size:368K _update

2SC180H
2SC180H

2SC1815-O MCC 2SC1815-Y Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SC1815-GR CA 91311 Phone: (818) 701-4933 2SC1815-BL Fax: (818) 701-4939 Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF NPN Silicon Amplifier and General Purpose Applications. • Capable of 0.4Watts of Power Dissipation. Epitaxial

5.5. 2sc1815.pdf Size:272K _toshiba

2SC180H
2SC180H

2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Unit: mm Driver Stage Amplifier Applications High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) Low n

5.6. 2sc1815-t.pdf Size:213K _toshiba

2SC180H
2SC180H

5.7. 2sc1815l.pdf Size:308K _toshiba

2SC180H
2SC180H

2SC1815(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier Applications Unit: mm Low Noise Amplifier Applications High breakdown voltage, high current capability : V = 50 V (min), I = 150 mA (max) CEO C Excellent linearity of h FE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : h (I = 0.1 mA)/h (I = 2 mA) = 0.95

5.8. 2sc1845.pdf Size:188K _nec

2SC180H
2SC180H

5.9. 2sc1844.pdf Size:225K _nec

2SC180H
2SC180H

5.10. 2sc1841.pdf Size:122K _nec

2SC180H
2SC180H

5.11. 2sc1843.pdf Size:223K _nec

2SC180H
2SC180H

5.12. 2sc1842.pdf Size:213K _nec

2SC180H
2SC180H

5.13. 2sc1846.pdf Size:93K _panasonic

2SC180H
2SC180H

Power Transistors 2SC1846 Silicon NPN epitaxial planar type For medium output power amplification Unit: mm 8.0+0.5 0.1 3.20.2 Complementary to 2SA0885 ? 3.160.1 Features Low collector-emitter saturation voltage VCE(sat) Output of 3 W can be obtained by a complementary pair with 2SA0885 TO-126B package which requires no insulation plate for installa- tion to the heat sink

5.14. 2sc1847.pdf Size:94K _panasonic

2SC180H
2SC180H

Power Transistors 2SC1847 Silicon NPN epitaxial planar type For medium output power amplification Unit: mm 8.0+0.5 0.1 3.20.2 Complementary to 2SA0886 ? 3.160.1 Features Output of 4 W can be obtained by a complementary pair with 2SA0886 TO-126B package which requires no insulation plate for installa- tion to the heat sink Absolute Maximum Ratings Ta = 25C Parameter Symb

5.15. 2sc1815.pdf Size:227K _utc

2SC180H
2SC180H

UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR ? FEATURES * Collector-Emitter voltage: BV =50V CEO * Collector current up to 150mA * High h linearity FE * Complimentary to UTC 2SA1015 ? SYMBOL ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2

5.16. 2sc1881.pdf Size:35K _hitachi

2SC180H
2SC180H

2SC1881(K) Silicon NPN Triple Diffused Application High gain amplifier power switching Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 1 3. Emitter 6.8 k? 400 ? 2 3 (Typ) (Typ) 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7V Collector current IC 3A Co

5.17. 2sc1890.pdf Size:24K _hitachi

2SC180H
2SC180H

2SC1890, 2SC1890A Silicon NPN Epitaxial Application Low frequency high voltage amplifier Complementary pair with 2SA893/A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1890, 2SC1890A Absolute Maximum Ratings (Ta = 25C) Ratings Item Symbol 2SC1890 2SC1890A Unit Collector to base voltage VCBO 90 120 V Collector to emitter voltage VCEO 90 120 V Emitter to base vo

5.18. 2sc1875.pdf Size:111K _mospec

2SC180H
2SC180H

A A A

5.19. 2sc1819.pdf Size:37K _no

2SC180H

5.20. 2sc1849.pdf Size:40K _no

2SC180H

5.21. 2sc1848.pdf Size:43K _no

2SC180H

5.22. 2sc1816.pdf Size:217K _sony

2SC180H
2SC180H

5.23. 2sc1817.pdf Size:137K _sony

2SC180H
2SC180H

5.24. 2sc1810.pdf Size:293K _sony

2SC180H
2SC180H

5.25. 2sc1827.pdf Size:69K _wingshing

2SC180H

2SC1827 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SA769 ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 4 A Collector Dissipation (Tc=25? PC 30 W ? ? ? Junction Temperature Tj 15

5.26. 2sc1894.pdf Size:143K _jmnic

2SC180H
2SC180H

JMnic Product Specification Silicon NPN Power Transistors 2SC1894 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Low collector saturation voltage APPLICATIONS ·For color TV horizontal output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=?) SYMBOL PARAMETER C

5.27. 2sc1827.pdf Size:146K _jmnic

2SC180H
2SC180H

JMnic Product Specification Silicon NPN Power Transistors 2SC1827 DESCRIPTION ·With TO-220 package ·Complement to type 2SA769 ·Collector current :IC=4A ·Collector dissipation :PC=30W@TC=25? APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220)

5.28. 2sc1846.pdf Size:180K _jmnic

2SC180H
2SC180H

JMnic Product Specification Silicon NPN Power Transistors 2SC1846 DESCRIPTION · ·With TO-126 package ·Complement to type 2SA885 ·Low collector saturation APPLICATIONS ·For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO C

5.29. 2sc1875.pdf Size:147K _jmnic

2SC180H
2SC180H

JMnic Product Specification Silicon NPN Power Transistors 2SC1875 DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNI

5.30. 2sc1893.pdf Size:143K _jmnic

2SC180H
2SC180H

JMnic Product Specification Silicon NPN Power Transistors 2SC1893 DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·For line-operated horizontal deflection output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UN

5.31. 2sc1847.pdf Size:178K _jmnic

2SC180H
2SC180H

JMnic Product Specification Silicon NPN Power Transistors 2SC1847 DESCRIPTION · ·With TO-126 package ·Complement to type 2SA886 ·Low collector saturation APPLICATIONS ·For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO C

5.32. 2sc1815-m.pdf Size:168K _microelectronics

2SC180H
2SC180H

5.33. 2sc184.pdf Size:81K _usha

2SC180H
2SC180H

Transistors 2SC184

5.34. 2sc1871a.pdf Size:127K _inchange_semiconductor

2SC180H
2SC180H

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1871A DESCRIPTION ·With TO-3 package ·High switching speed APPLICATIONS ·For power switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector MAXIMUN RATINGS SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volt

5.35. 2sc1895.pdf Size:127K _inchange_semiconductor

2SC180H
2SC180H

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1895 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Low collector saturation voltage APPLICATIONS ·For color TV horizontal output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=?) S

5.36. 2sc1894.pdf Size:113K _inchange_semiconductor

2SC180H
2SC180H

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1894 DESCRIPTION Ў¤ With TO-3 package Ў¤ High breakdown voltage Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ For color TV horizontal output applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ў

5.37. 2sc1863.pdf Size:128K _inchange_semiconductor

2SC180H
2SC180H

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1863 DESCRIPTION ·With TO-66 package ·Continuous collector current-IC=7A ·Power dissipation –PC=40W @TC=25? APPLICATIONS ·Designed for general-purpose amplifier and switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Col

5.38. 2sc1881.pdf Size:57K _inchange_semiconductor

2SC180H
2SC180H

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1881 DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain APPLICATIONS ·High gain amplifier power switching PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collect

5.39. 2sc1868.pdf Size:127K _inchange_semiconductor

2SC180H
2SC180H

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1868 DESCRIPTION ·With TO-3 package ·Wide area of safe operation ·High voltage ,high speed APPLICATIONS ·For switching regulator application PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAME

5.40. 2sc1870.pdf Size:129K _inchange_semiconductor

2SC180H
2SC180H

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1870 DESCRIPTION ·With TO-3 package ·High switching speed APPLICATIONS ·For power switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector MAXIMUN RATINGS SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta

5.41. 2sc1827.pdf Size:116K _inchange_semiconductor

2SC180H
2SC180H

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1827 DESCRIPTION Ў¤ With TO-220 package Ў¤ Complement to type 2SA769 Ў¤ Collector current :IC=4A Ў¤ Collector dissipation :PC=30W@TC=25Ўж APPLICATIONS Ў¤ For use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolu

5.42. 2sc1846.pdf Size:148K _inchange_semiconductor

2SC180H
2SC180H

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2SA885 Ў¤ Low collector saturation APPLICATIONS Ў¤ For medium output power amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2SC1846 Ў¤ Absolute Maximun Ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC

5.43. 2sc1880.pdf Size:57K _inchange_semiconductor

2SC180H
2SC180H

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1880 DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain APPLICATIONS ·For industrial use PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage O

5.44. 2sc1819m.pdf Size:56K _inchange_semiconductor

2SC180H
2SC180H

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1819M DESCRIPTION ·With TO-220 package ·High VCEO ·Large PC APPLICATIONS ·For use in line-operated color TV chroma output circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Absolute maximum ratings (Ta=2

5.45. 2sc1875.pdf Size:116K _inchange_semiconductor

2SC180H
2SC180H

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1875 DESCRIPTION Ў¤ With TO-3 package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO

5.46. 2sc1893.pdf Size:113K _inchange_semiconductor

2SC180H
2SC180H

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1893 DESCRIPTION Ў¤ With TO-3 package Ў¤ High breakdown voltage APPLICATIONS Ў¤ For line-operated horizontal deflection output applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO

5.47. 2sc1847.pdf Size:146K _inchange_semiconductor

2SC180H
2SC180H

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2SA886 Ў¤ Low collector saturation APPLICATIONS Ў¤ For medium output power amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2SC1847 Ў¤ Absolute Maximun Ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC

5.48. 2sc1826.pdf Size:56K _inchange_semiconductor

2SC180H
2SC180H

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1826 DESCRIPTION ·With TO-220 package ·Collector current :IC=4A ·Collector power dissipation :PC=30W@TC=25? APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and sy

5.49. 2sc1828.pdf Size:128K _inchange_semiconductor

2SC180H
2SC180H

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1828 DESCRIPTION ·With TO-66 package ·Continuous collector current-IC=1A ·Power dissipation –PC=40W @TC=25? APPLICATIONS ·For power amplifier applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta

5.50. 2sc1815m.pdf Size:729K _blue-rocket-elect

2SC180H
2SC180H

2SC1815M(BR3DG1815M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 耐压高,电流大,有极好的 h 特性,低噪声系数。 FE High voltage and high current, excellent hFE linearity ,low noise. 用途 / Applications 用于普通低频放大,激励级放大

5.51. 2sc1815.pdf Size:959K _kexin

2SC180H
2SC180H

SMD Type or SMD Type TransistICs NPN Transistors 2SC1815 SOT-23 Unit: mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Power dissipation 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 5

5.52. 2sc1815.pdf Size:544K _shenzhen-tuofeng-semi

2SC180H
2SC180H

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1815 TRANSISTOR (NPN) FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : 2SC1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base

Datasheet: 2SC1802 , 2SC1803 , 2SC1804 , 2SC1805 , 2SC1806 , 2SC1807 , 2SC1808 , 2SC1809 , 2N3904 , 2SC181 , 2SC1810 , 2SC1811 , 2SC1811-1 , 2SC1811-2 , 2SC1812 , 2SC1813 , 2SC1815 .

 


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