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2SC1969 Transistor. Datasheet pdf. Equivalent

Type Designator: 2SC1969

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 75 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO220

2SC1969 Transistor Equivalent Substitute - Cross-Reference Search

2SC1969 Datasheet PDF:

1.1. 2sc1969.pdf Size:145K _mitsubishi

2SC1969
2SC1969

1.2. 2sc1969.pdf Size:202K _inchange_semiconductor

2SC1969
2SC1969

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1969 DESCRIPTION ·High Power Gain- : Gpe?12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for 10~14 watts output power class AB amplifiers applications in HF band. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collecto

4.1. 2sc1966.pdf Size:125K _mitsubishi

2SC1969
2SC1969

4.2. 2sc1968a.pdf Size:132K _mitsubishi

2SC1969
2SC1969

4.3. 2sc1967.pdf Size:205K _mitsubishi

2SC1969
2SC1969

Datasheet: 2SC1963 , 2SC1964 , 2SC1965 , 2SC1965A , 2SC1966 , 2SC1967 , 2SC1968 , 2SC1968A , MJE13003 , 2SC197 , 2SC1970 , 2SC1971 , 2SC1972 , 2SC1973 , 2SC1974 , 2SC1975 , 2SC1976 .

 


2SC1969
  2SC1969
  2SC1969
  2SC1969
 
2SC1969
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