All Transistors. 2SC2009 Datasheet

 

2SC2009 Transistor. Datasheet pdf. Equivalent

Type Designator: 2SC2009

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 100 °C

Transition Frequency (ft): 275 MHz

Collector Capacitance (Cc): 2.8 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO92

2SC2009 Transistor Equivalent Substitute - Cross-Reference Search

2SC2009 Datasheet PDF:

4.1. 2sc2002.pdf Size:154K _nec

2SC2009
2SC2009

4.2. 2sc2000.pdf Size:45K _nec

2SC2009

4.3. 2sc2003.pdf Size:159K _nec

2SC2009
2SC2009

4.4. 2sc2001.pdf Size:154K _nec

2SC2009
2SC2009

4.5. 2sc2001.pdf Size:1147K _no

2SC2009
2SC2009

4.6. 2sc2001.pdf Size:473K _secos

2SC2009
2SC2009

2SC2001 0.7 A , 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? High hFE and low VCE(sat) G H hFE(IC=100mA):200(Typ) VCE(sat)(700mA):0.2V(Typ) ?Emitter J ?Collector ?Base A D CLASSIFICATION OF hFE Millimeter B REF. Product-Rank 2SC2001-M 2SC2001-L 2SC2001

4.7. 2sc2001.pdf Size:226K _lge

2SC2009
2SC2009

2SC2001(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High hFE and low VCE(sat) hFE(IC=100mA) : 200(Typ) VCE(sat)(700mA): 0.2V (Typ) Dimensions in inches and (millimeters) MAXIMUM RATINGS(TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltag

Datasheet: 2SC1999 , 2SC20 , 2SC200 , 2SC2000 , 2SC2001 , 2SC2002 , 2SC2003 , 2SC2008 , BC237 , 2SC201 , 2SC2010 , 2SC2011 , 2SC2012 , 2SC2013 , 2SC2014 , 2SC2017 , 2SC2018 .

 


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