2SC2073 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC2073

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 25

Maximum collector-base voltage |Ucb|, V: 150

Maximum collector-emitter voltage |Uce|, V: 150

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 1.5

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 1

Collector capacitance (Cc), pF: 70

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of 2SC2073 transistor: TO220

2SC2073 Equivalent Transistors - Cross-Reference Search

2SC2073 PDF document for downloads:

1.1. 2sc2073a.pdf Size:154K _toshiba

1.2. 2sc2073.pdf Size:228K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2073 DESCRIPTION ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SA940 APPLICATIONS ·Power amplifier applications. ·Vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A IBB Base Current-Continuous 0.5 A Collector Power Dissipation 1.5 @ Ta=25? PC W Collector Power Dissipation 25 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2073 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT Collect

1.3. 2sc2073.pdf Size:218K _lge

2SC2073(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Wide safe Operating Area. Complementary to 2SA940 MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Paramenter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 1.5 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC =100?A, IE=0 150 V Collector-emitter breakdown voltage V(BR)CEO IC =1mA, IB=0 150 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=120V, IE=0 10 ?A Emitter cut-off current IEBO VEB=5V, IC=0 10 ?A DC current gain hFE VCE=10V, IC=0.5A 40 140

See also transistors datasheet: 2SC2065 , 2SC2066 , 2SC2067 , 2SC2068 , 2SC2069 , 2SC207 , 2SC2070 , 2SC2071 , 2N222 , 2SC2075 , 2SC2076 , 2SC2078 , 2SC2078B , 2SC2078C , 2SC2078D , 2SC2078E , 2SC2079 .

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