| |
2N18
Transistor Datasheet. Parameters and Characteristics. Type Designator: 2N18
Material of transistor: Ge
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.1
Maximum collector-base voltage |Ucb|, V: 25
Maximum collector-emitter voltage |Uce|, V: 25
Maximum emitter-base voltage |Ueb|, V: 10
Maximum collector current |Ic max|, A: 0.2
Maximum junction temperature (Tj), °C: 100
Transition frequency (ft), MHz: 2
Collector capacitance (Cc), pF: 40
Forward current transfer ratio (hFE), min: 18
Noise Figure, dB: - Package of 2N18
transistor: TO30
2N18
Equivalent Transistors - Cross-Reference Search 2N18
PDF document for downloads:
1.1. 2n1854.pdf Size:219K _rca |
| ÿþ |
1.2. 2n1853.pdf Size:259K _rca |
| ÿþ |
1.3. 2n1893.pdf Size:663K _rca |
| ÿþ |
1.4. 2n186a_2n187a_2n188a.pdf Size:352K _general_electric |
| ÿþ |
1.5. 2n189_2n190_2n191_2n192.pdf Size:343K _general_electric |
| ÿþ |
1.6. 2n186_2n187_2n188.pdf Size:357K _general_electric |
| ÿþ |
1.7. 2n186-a_2n187-a_2n188-a_2n189_2n190_2n191_2n192.pdf Size:384K _general_electric |
| ÿþ |
1.8. 2n1893_cnv_2.pdf Size:51K _philips |
| DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D111
2N1893
NPN medium power transistor
1997 Apr 17
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
Philips Semiconductors Product specification
NPN medium power transistor 2N1893
FEATURES PINNING
• Low current (max. 500 mA)
PIN DESCRIPTION
• Low voltage (max. 80 V).
1 emitter
2 base
APPLICATIONS
3 collector, connected to case
• High performance amplifiers
• Oscillator and switching applications.
1
handbook, halfpage
3
2
DESCRIPTION
2
NPN medium power transistor in a TO-39 metal package.
1
3
MAM317
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 120 V
VCEO collector-emitter voltage open base - 80 V
ICM peak collector current - 1A
Ptot total power dissipation Tcase ? 25 °C - 3W
hFE DC current gain IC = 150 mA; VCE = 10 V 40 120
1997 Apr 17 2
P |
1.9. 2n1893.pdf Size:311K _st |
| 2N1893
®
SMALL SIGNAL NPN TRANSISTOR
GENERAL PURPOSE HIGH VOLTAGE
DEVICE
DESCRIPTION
The 2N1893 is a Silicon Planar Epitaxial NPN
transistor in Jedec TO-39 metal case, designed
for use in high-performance amplifier, oscillator
and switching circuits. It provides greater voltage
swings in oscillator and amplifier circuits and
more protection in inductive switching circuits due
to its 120 V collector-to-base voltage rating.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE = 0) 120 V
VCER Collector-Emitter Voltage (RBE ? 10?) 100 V
VCEO Collector-Emitter Voltage (IB = 0) 80 V
VEBO Emitter-Base Voltage (IC = 0) 7 V
IC Collector Current 0.5 A
P 0.8 W
tot Total Dissipation at Tamb ? 25 oC
3 W
at T ? 25 oC
C
1.7 W
at TC ? 100 oC
o
Tstg Storage Temperature -65 to 175 C
o
Tj Max. Operating Junction Temperature 175 C
1/5
January 2003
2N1893
THERMAL DATA
o
Rthj-case Thermal Resistance Ju |
1.10. 2n1613_2n1711_2n1893.pdf Size:64K _central |
| 145 Adams Avenue, Hauppauge, NY 11788 USA
Tel: (631) 435-1110 • Fax: (631) 435-1824
|
1.11. 2n1893_2n720a.pdf Size:55K _microsemi |
| TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/182
Devices Qualified Level
JAN
2N1893
2N720A JANTX
2N1893S
JANTXV
MAXIMUM RATINGS
Ratings Symbol All Devices Units
Collector-Emitter Voltage 80 Vdc
VCEO
Collector-Base Voltage 120 Vdc
VCBO
7.0 Vdc
Emitter-Base Voltage VEBO
100 Vdc TO-18 (TO-206AA)*
Collector-Emitter Voltage (R = 10 ?) VCER
BE
2N720A
Collector Current I 500 mAdc
C
2N720A 2N1893, S
Total Power Dissipation @ T = +250C (1) 0.5 0.8
A
PT W
@ T = +250C (2) 1.8 3.0
C
0
Operating & Storage Junction Temperature Range
TJ, Tsrg -65 to +200 C
THERMAL CHARACTERISTICS
Characteristics Symbol 2N720A 2N1893, S Unit
TO-5*
0
Thermal Resistance, Junction-to-Case 97 58 C/W
R?JC
2N1893, 2N1893S
1) Derate linearly 2.86 mW/0C for 2N720A, 4.57 mW/0C for 2N1893, S T > 250C
A
2) Derate linearly 10.3 mW/0C for 2N720A, 17.2 mW/0C for 2N1893, S T > 250C
C
*See appendix A for package
outline
|
1.12. 2n1870a-74a.pdf Size:215K _microsemi See also transistors datasheet: 2N1784
, 2N1785
, 2N1786
, 2N1787
, 2N1788
, 2N1789
, 2N179
, 2N1790
, AD149
, 2N180
, 2N1808
, 2N1809
, 2N181
, 2N1810
, 2N1811
, 2N1812
, 2N1813
. Keywords| 2N18
Datasheet | 2N18
Datenblatt | 2N18
RoHS | 2N18
Distributor | | 2N18
Application Notes | 2N18
Component | 2N18
Circuit | 2N18
Schematic | | 2N18
Equivalent | 2N18
Cross Reference | 2N18
Data Sheet | 2N18
Fiche Technique |
|