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2SC2287
  2SC2287
  2SC2287
 
2SC2287
  2SC2287
  2SC2287
 
2SC2287
  2SC2287
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU912
BU920 .. BUP39
BUP40 .. BUV98V
BUW11 .. BUY21A
BUY22 .. CCN83
CCS2001 .. CFD2374Q
CFD2375 .. CK28A
CK398 .. CP404
CP405 .. CSA1267Y
CSA1293 .. CSC1684R
CSC1684S .. CSD669A
CSD669AB .. D24A3900A
D26B1 .. D40E4
D40E5 .. D56W2
D6 .. DPLS350E
DPLS350Y .. DTA143XE
DTA143XEA .. DTD113ES
DTD113Z .. ECG13
ECG130 .. ECG482
ECG483 .. ESM3030DV
ESM3045AV .. FCS9018E
FCS9018F .. FJY3009R
FJY3010R .. FMMT6517
FMMT6520 .. FX2369
FX2369A .. GC522
GC522K .. GES5551
GES5551R .. GS-H9033
GS-H9033D .. GT338B
GT338V .. HDA412
HDA420 .. HS5308
HS5810 .. IDD525
IDD526 .. JE9100C
JE9100D .. KRA102
KRA102M .. KRA763U
KRA764E .. KRC836E
KRC836U .. KSB1098-O
KSB1098-R .. KSC2787-R
KSC2787-Y .. KSD5064
KSD5065 .. KST92
KST93 .. KT3198V
KT321A .. KT6134B
KT6134V .. KT814A9
KT814B .. KT897A
KT897B .. KTB1424
KTB1772 .. KTD3055
KTD525 .. MC142
MC150 .. MJ10042
MJ10044 .. MJD350T4
MJD41C .. MJE5851
MJE5852 .. MM869B
MMBA811C5 .. MMBT589
MMBT589L .. MP110B-B
MP110B-G .. MP504A
MP505 .. MPS2925
MPS2926 .. MPSH02
MPSH04 .. MRF905
MRF912 .. NA11HX
NA11HY .. NB013FU
NB013FV .. NB212FY
NB212H .. NKT124
NKT12429 .. NPS5141
NPS5142 .. NTE172A
NTE176 .. OC815
OC816 .. PBSS5160V
PBSS5220T .. PIMD3
PIMH9 .. PN918
PN918R .. RCA1A05
RCA1A06 .. RN1605
RN1606 .. RN2710
RN2710JE .. S15649
S1619 .. SDT9204
SDT9205 .. SGSIF444
SGSIF445 .. SRA2212EF
SRA2212M .. STC5084
STC5085 .. SZD1060
SZD1181 .. TA2470
TA2492 .. TIP140T
TIP141 .. TIS37
TIS38 .. TN4036
TN4037 .. TP929
TP929A .. UN1066
UN1110Q .. UN9218
UN9219 .. ZT403
ZT403P .. ZTX4402L
ZTX4402M .. ZXTP5401FL
ZXTP5401G .. ZXTPS720MC
 
2SC2287 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SC2287 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC2287

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 17

Maximum collector-base voltage |Ucb|, V: 38

Maximum collector-emitter voltage |Uce|, V: 18

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 1.5

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz: 175

Collector capacitance (Cc), pF: 17

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of 2SC2287 transistor: XM5

2SC2287 Equivalent Transistors - Cross-Reference Search

2SC2287 PDF doc:

5.1. 2sc2216_2sc2717.pdf Size:267K _toshiba

2SC2287
2SC2287
2SC2216,2SC2717 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2216,2SC2717 TV Final Picture IF Amplifier Applications Unit: mm High gain: Gpe = 33dB (typ.) (f = 45 MHz) Good linearity of h . FE Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit 2SC2216 50 Collector-base voltage VCBO V 2SC2717 30 2SC2216 45 Collector-emitter VCEO V voltage 2SC2717 25 Emitter-base voltage VEBO 4 V Collector current IC 50 mA Emitter current IE -50 mA Collector power dissipation PC 300 mW Junction temperature Tj 125 C JEDEC TO-92 Storage temperature range Tstg -55~125 C JEITA SC-43 TOSHIBA 2-5F1E Weight: 0.21 g (typ.) Electrical Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit 2SC2216 VCB = 50 V, IE = 0 Collector cut-off current ICBO ? ? 0.1 A 2SC2717 VCB = 30 V, IE = 0 Emitter cut-off current IEBO VEB = 3 V, IC = 0 ? ? 0.1 A 2SC2216 45 ? ? Collector-emitter V (BR) C

5.2. 2sc2235.pdf Size:174K _toshiba

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5.3. 2sc2230.pdf Size:202K _toshiba

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5.4. 2sc2231.pdf Size:122K _toshiba

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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.5. 2sc2270.pdf Size:94K _toshiba

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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.6. 2sc2229.pdf Size:211K _toshiba

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5.7. 2sc2240.pdf Size:347K _toshiba

2SC2287
2SC2287
2SC2240 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2240 Low Noise Audio Amplifier Applications Unit: mm The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse noise. This is recommended for the first stages of Equalizer amplifiers. Low noise: NF = 4dB (typ.) RG = 100 ?, V = 6 V, I = 100 A, CE C f = 1 kHz : NF = 0.5dB (typ.) R = 1 k?, V = 6 V, I = 100 A, G CE C f = 1 kHz Low pulse noise: Low 1/f noise High DC current gain: h = 200~700 FE High breakdown voltage: V = 120 V CEO Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit JEDEC TO-92 Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V JEITA SC-43 Emitter-base voltage VEBO 5 V TOSHIBA 2-5F1B Collector current IC 100 mA Weight: 0.21 g (typ.) Base current IB 20 mA Collector power diss

5.8. 2sc2236.pdf Size:177K _toshiba

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5.9. 2sc2242.pdf Size:112K _toshiba

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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.10. 2sc2290.pdf Size:169K _toshiba

2SC2287
2SC2287
2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) Unit in mm Specified 12.5V, 28MHz Characteristics Output Power : Po = 60W (Min.) PEP Power Gain : Gp = 11.8dB (Min.) Collector Efficiency : ?C = 35% (Min.) Intermodulation Distortion: IMD = -30dB (Max.) MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 45 V Collector-Emitter Voltage VCES 45 V Collector-Emitter Voltage VCEO 18 V Emitter-Base Voltage VEBO 4 V Collector Current IC 20 A Collector Power Dissipation PC 175 W JEDEC Junction Temperature Tj 175 C EIAJ Storage Temperature Range Tstg -65~175 C TOSHIBA 2-13B1A Weight: 5.2g 000707EAA1 TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulne

5.11. 2sc2210.pdf Size:73K _sanyo

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5.12. 2sc2223.pdf Size:222K _nec

2SC2287
2SC2287

5.13. 2sc2206.pdf Size:105K _panasonic

2SC2287
2SC2287
Transistors 2SC2206 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm Complementary to 2SA1254 2.50.1 6.90.1 (1.0) (1.5) (1.5) Features R 0.9 Optimum for RF amplification of FM/AM radios R 0.7 High transition frequency fT M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board (0.85) 0.450.05 Absolute Maximum Ratings Ta = 25C 0.550.1 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open) VCEO 20 V 3 2 1 1: Base (2.5) (2.5) Emitter-base voltage (Collector open) VEBO 5 V 2: Collector 3: Emitter Collector current IC 30 mA M-A1 Package Peak collector current ICP 60 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Electrical Characteristics Ta = 25C 3C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitt

5.14. 2sc2206_e.pdf Size:57K _panasonic

2SC2287
2SC2287
Transistor 2SC2206 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SA1254 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Optimum for RF amplification of FM/AM radios. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Absolute Maximum Ratings (Ta=25?C) 3 2 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V 2.5 2.5 Emitter to base voltage CEBO 5 V Collector current IC 30 mA 1:Base 2:Collector EIAJ:SC71 Collector power dissipation PC 400 mW 3:Emitter M Type Mold Package Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10 A, IE = 0 30 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 V E

5.15. 2sc2295.pdf Size:51K _panasonic

2SC2287
2SC2287
Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SA1022 +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 Optimum for RF amplification of FM/AM radios. High transition frequency fT. 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25?C) 0.1 to 0.3 Parameter Symbol Ratings Unit 0.4 0.2 Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage CEBO 5 V 1:Base JEDEC:TO236 2:Emitter EIAJ:SC59 Collector current IC 30 mA 3:Collector Mini Type Package Collector power dissipation PC 200 mW Junction temperature Tj 150 ?C Marking symbol : V Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 10V, IE = 0 0.1 A Forward curr

5.16. 2sc2209.pdf Size:91K _panasonic

2SC2287
2SC2287
Power Transistors 2SC2209 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 7.5+0.5 0.1 2.90.2 Complementary to 2SA0963 120 Features Large collector power dissipation PC Output of 5 W can be obtained by a complementary pair with 2SA0963 Absolute Maximum Ratings Ta = 25C Parameter Symbol Rating Unit 0.750.1 Collector-base voltage (Emitter open) VCBO 50 V 0.50.1 0.50.1 1.260.1 4.60.2 Collector-emitter voltage (Base open) VCEO 40 V 2.30.2 Emitter-base voltage (Collector open) VEBO 5 V 1: Emitter 1 2 3 2: Collector Collector current IC 1.5 A 3: Base Peak collector current ICP 3 A TO-126A-A1 Package Collector power dissipation * PC 10 W Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Note) = 25C *: T C Electrical Characteristics Ta = 25C 3C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 1 mA, IE = 050 V Collector-emitter voltage

5.17. 2sc2295_e.pdf Size:51K _panasonic

2SC2287
2SC2287
Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SA1022 +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 Optimum for RF amplification of FM/AM radios. High transition frequency fT. 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25?C) 0.1 to 0.3 Parameter Symbol Ratings Unit 0.4 0.2 Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage CEBO 5 V 1:Base JEDEC:TO236 2:Emitter EIAJ:SC59 Collector current IC 30 mA 3:Collector Mini Type Package Collector power dissipation PC 200 mW Junction temperature Tj 150 ?C Marking symbol : V Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 10V, IE = 0 0.1 A Forward curr

5.18. 2sc2258.pdf Size:71K _panasonic

2SC2287
2SC2287
Power Transistors 2SC2258 Silicon NPN triple diffusion planar type For high breakdown voltage general amplification Unit: mm 8.0+0.5 0.1 3.20.2 ? 3.160.1 Features High collector-emitter voltage (Base open) VCEO High transition frequency fT TO-126B package which requires no insulation plate for installa- tion to the heat sink Absolute Maximum Ratings Ta = 25C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 250 V 0.750.1 0.50.1 0.50.1 1.760.1 Collector-emitter voltage (Base open) VCEO 250 V 4.60.2 2.30.2 Emitter-base voltage (Collector open) VEBO 7 V 1: Emitter Collector current IC 100 mA 1 2 3 2: Collector 3: Base Peak collector current ICP 150 mA TO-126B-A1 Package Collector power dissipation PC 1.2 *1 W 4 *2 Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Note) Without heat sink *1: *2 :With a 100 ? 100 ? 2 mm Al heat sink Electrical Characteristics Ta = 25C 3C Parameter Sym

5.19. 2sc2235.pdf Size:100K _utc

2SC2287
2SC2287
UNISONIC TECHNOLOGIES CO., LTD 2SC2235 NPN SILICON TRANSISTOR AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS 1 TO-92 ? FEATURES * Complimentary to UTC 2SA965 1 TO-92NL ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC2235L-x-T92-B 2SC2235G-x-T92-B TO-92 E C B Tape Box 2SC2235L-x-T92-K 2SC2235G-x-T92-K TO-92 E C B Bulk 2SC2235L-x-T92-R 2SC2235G-x-T92-R TO-92 E C B Tape Reel 2SC2235L-x-T9N-B 2SC2235G-x-T9N-B TO-92NL E C B Tape Box 2SC2235L-x-T9N-K 2SC2235G-x-T9N-K TO-92NL E C B Bulk 2SC2235L-x-T9N-R 2SC2235G-x-T9N-R TO-92NL E C B Tape Reel Note: Pin Assignment: B: BASE C: COLLECTOR E: EMITTE www.unisonic.com.tw 1 of 4 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R211-012.C 2SC2235 NPN SILICON TRANSISTOR ? ABSOLUTE MAXIMUM RATING ( TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V 120 V CBO Collector-Emitter Voltage

5.20. 2sc2298.pdf Size:348K _hitachi

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5.21. 2sc2267.pdf Size:39K _hitachi

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5.22. 2sc2278.pdf Size:38K _hitachi

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5.23. 2sc2237.pdf Size:131K _mitsubishi

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A A A

5.25. 2sc2277.pdf Size:32K _no

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5.26. 2sc2221.pdf Size:426K _no

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5.27. 2sc2275.pdf Size:88K _no

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5.28. 2sc2238.pdf Size:138K _no

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5.29. 2sc2216.pdf Size:251K _secos

2SC2287
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2SC2216 0.05 A , 50 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? Amplifier dissipation NPN Silicon G H ?Base ?Emitter ?Collector J A D Millimeter REF. Min. Max. B A 4.40 4.70 B 4.30 4.70 K C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 E C F G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 Collector ? ?? Base ?? Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 50 V Collector to Emitter Voltage VCEO 45 V Emitter to Base Voltage VEBO 4 V Collector Current - Continuous IC 50 mA Collector Power Dissipation PC 300 mW Junction, Storage Temperature TJ, TSTG 125, -55~125 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO 50 - -

5.30. 2sc2274.pdf Size:78K _secos

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2SC2274 0.5 A , 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 ? High Breakdown Voltage G H ? High Current ? Low Saturation Voltage ?Emitter J ?Collector ?Base A D B CLASSIFICATION OF hFE(1) Millimeter REF. Min. Max. K Product-Rank 2SC2274-D 2SC2274-E 2SC2274-F A 4.40 4.70 B 4.30 4.70 Range 60~120 100~200 160~320 C 12.70 - D 3.30 3.81 E C F E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 Collector ?? ? Base ?? Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 0.5 A Collector Power Dissipation PC 600 mW Thermal Resistance From Junction To Ambient R?JA 208 °C / W Junction, Storage Temperature TJ, TSTG 1

5.31. 2sc2235tm.pdf Size:306K _secos

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2SC2287
2SC2235TM 0.8A , 120V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92MOD FEATURES ? Complementary to 2SA965 A D B CLASSIFICATION OF hFE Product-Rank 2SC2235TM-O 2SC2235TM-Y K E F Range 80-160 120-240 C N G H ?Emitter ? Collector ? Base M J L Collector ?? Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 5.50 6.50 H 1.70 2.05 ?? B 8.00 9.00 J 2.70 3.20 C 12.70 14.50 K 0.85 1.15 Base D 4.50 5.30 L 1.60 Max E 0.35 0.65 M 0.00 0.40 F 0.30 0.51 N 4.00 Min ?? G 1.50 TYP. Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 120 V Collector to Emitter Voltage VCEO 120 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 0.8 A Collector Power Dissipation PC 0.9 W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (

5.32. 2sc2238a.pdf Size:158K _jmnic

2SC2287
2SC2287
JMnic Product Specification Silicon NPN Power Transistors 2SC2238 2SC2238A 2SC2238B DESCRIPTION ·With TO-220 package ·Complement to type 2SA968 ·High breakdown votage APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SC2238 160 VCBO 2SC2238A Open emitter 180 V Collector-base voltage 2SC2238B 200 2SC2238 160 VCEO 2SC2238A Open base 180 V Collector-emitter voltage 2SC2238B 200 VEBO Emitter-base voltage Open collector 5 V IC Collector current 1.5 A IE Emitter current -1.5 A PT Total power dissipation TC=25? 25 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon NPN Power Transistors 2SC2238 2SC2238A 2SC2238B CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN

5.33. 2sc2275.pdf Size:156K _jmnic

2SC2287
2SC2287
JMnic Product Specification Silicon NPN Power Transistors 2SC2275 2SC2275A DESCRIPTION ·With TO-220 package ·Complement to type 2SA985/985A ·High breakdown voltage APPLICATIONS ·For low frequency and high frequency power amplifer applicatons PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SC2275 120 VCBO Collector-base voltage Open emitter V 2SC2275A 150 2SC2275 120 VCEO Collector-emitter voltage Open base V 2SC2275A 150 VEBO Emitter-base voltage Open collector 5 V IC Collector current 1.5 A ICM Collector current-peak 3.0 A IB Base current 0.3 A PC Collector power dissipation TC=25? 25 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon NPN Power Transistors 2SC2275 2SC2275A CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MA

5.34. 2sc2258a.pdf Size:146K _jmnic

2SC2287
2SC2287
JMnic Product Specification Silicon NPN Power Transistors 2SC2258A DESCRIPTION · ·With TO-126 package ·High transition frequency fT ·High collector-emitter voltage VCEO APPLICATIONS ·High voltage general amplifier ·TV video output amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector- emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 0.1 A ICM Collector current-peak 0.15 A 1.2*1 PC Collector power dissipation TC=25? W 4*2 Tj Junction temperature 150 ? Tstg Storage temperature -55~+150 ? Note :*1: Without heat sink *2: With a 100 ? 100 ? 2 mm A1 heat sink JMnic Product Specification Silicon NPN Power Transistors 2SC2258A CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

5.35. 2sc2246.pdf Size:121K _jmnic

2SC2287
2SC2287
Product Specification www.jmnic.com Silicon Power Transistors 2SC2246 DESCRIPTION ·High voltage ,high speed ·With TO-3 package APPLICATIONS ·Power switching ·Power amplification ·power driver PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 450 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 15 A ICM Collector current-Peak 30 A IB Base current 6 A PT Total power dissipation Tmb=25? 100 W Tj Junction temperature 200 ? Tstg Storage temperature -65~200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-mb Thermal resistance from junction to mounting base 1.0 ?/W JMnic Product Specification www.jmnic.com Silicon Power Transistors 2SC2246 CHARACTERISTICS Tj=25? unless otherwise specified

5.36. 2sc2258.pdf Size:166K _jmnic

2SC2287
2SC2287
JMnic Product Specification Silicon NPN Power Transistors 2SC2258 DESCRIPTION · ·With TO-126 package ·High transition frequency fT ·High collector-emitter voltage VCEO APPLICATIONS ·For high breakdown voltage general amplification ·For video output amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 250 V VCEO Collector- emitter voltage Open base 250 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 0.1 A ICM Collector current-peak 0.15 A 1.2*1 PC Collector power dissipation TC=25? W 4*2 Tj Junction temperature 150 ? Tstg Storage temperature -55~+150 ? Note :*1: Without heat sink *2: With a 100 ? 100 ? 2 mm A1 heat sink JMnic Product Specification Silicon NPN Power Transistors 2SC2258 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAME

5.37. 2sc2292.pdf Size:202K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2292 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IBB Base Current-Continuous 4 A IBM Base Current-Peak 8 A Collector Power Dissipation PC @TC=25? 80 W Tj Junction Temperature 150 ? Tstg Storage Temperature Range -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.56 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2292 ELECTRICAL CHARACTERISTICS TC=25? unless o

5.38. 2sc2243.pdf Size:232K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2243 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IBB Base Current-Continuous 2 A Collector Power Dissipation PC @TC=25? 100 W Tj Junction Temperature 200 ? Tstg Storage Temperature Range -65~200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.0 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2243 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL

5.39. 2sc2247.pdf Size:261K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2247 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 2 A Collector Power Dissipation PC 40 W @TC=25? Tj Junction Temperature 175 ? Tstg Storage Temperature Range -65~175 ? isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2247 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 100mA; L= 25mH 400 V

5.40. 2sc2262.pdf Size:217K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2262 DESCRIPTION ·High Power Dissipation- : PC= 80W(Max.)@TC=25? ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) ·Complement to Type 2SA982 APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A IBB Base Current-Continuous 3 A Collector Power Dissipation PC @TC=25? 80 W Tj Junction Temperature 150 ? Storage Temperature -65~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2262 ELECTRICAL CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 140 V

5.41. 2sc2238_2sc2238a_2sc2238b.pdf Size:125K _inchange_semiconductor

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2SC2287
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2238 2SC2238A 2SC2238B DESCRIPTION Ў¤ With TO-220 package Ў¤ Complement to type 2SA968 Ў¤ High breakdown votage APPLICATIONS Ў¤ Power amplifier applications Ў¤ Driver stage amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL PARAMETER VCBO CHA IN Emitter-base voltage Collector current Emitter current Collector-base voltage GE S N 2SC2238A 2SC2238B 2SC2238 2SC2238A 2SC2238B 2SC2238 EMIC Open emitter Open base CONDITIONS OND TOR UC VALUE 160 180 200 160 180 200 UNIT V VCEO Collector-emitter voltage V VEBO IC IE PT Tj Tstg Open collector 5 1.5 -1.5 V A A W Ўж Ўж Total power dissipation Junction temperature Storage temperature TC=25Ўж 25 150 -55~150

5.42. 2sc2270.pdf Size:122K _inchange_semiconductor

2SC2287
2SC2287
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2270 DESCRIPTION · ·With TO-126 package ·Low collector saturation voltage ·High collector power dissipation APPLICATIONS ·Strobo flash applications ·Medimum power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 50 V VCEO Collector-emitter voltage Open base 20 V VEBO Emitter-base voltage Open collector 8 V IC Collector current (DC) 5 A ICM Collector current-peak 8 A IE Emitter current (DC) -5 A IEM Emitter current-peak -8 A Ta=25? 1.0 PC Total power dissipation W TC=25? 10 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2270 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PAR

5.43. 2sc2266.pdf Size:129K _inchange_semiconductor

2SC2287
2SC2287
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2266 DESCRIPTION ·With TO-3 package ·High dielectric strength ·Short switching time APPLICATIONS ·For switching regulator application PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector MAXIMUN RATINGS SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A IB Base current 3 A PT Total power dissipation Tmb?25? 100 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance from junction to case 1.25 ?/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2266 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MI

5.44. 2sc2209.pdf Size:233K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2209 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·High Collector Power Dissipation ·Complement to Type 2SA963 APPLICATIONS ·Designed for low frequency power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak 3 A Collector Power Dissipation PC @ TC=25? 10 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2209 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 50 V V(BR)CEO Co

5.45. 2sc2293.pdf Size:203K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2293 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IBB Base Current-Continuous 4 A IBM Base Current-Peak 8 A Collector Power Dissipation PC @TC=25? 100 W Tj Junction Temperature 150 ? Tstg Storage Temperature Range -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.25 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2293 ELECTRICAL CHARACTERISTICS TC=25? unless

5.46. 2sc2248.pdf Size:261K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2248 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current-Continuous 3 A Collector Power Dissipation PC 40 W @TC=25? Tj Junction Temperature 175 ? Tstg Storage Temperature Range -65~175 ? isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2248 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 100mA; L= 25mH 400 V

5.47. 2sc2245.pdf Size:232K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2245 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IBB Base Current-Continuous 4 A Collector Power Dissipation PC @TC=25? 100 W Tj Junction Temperature 200 ? Tstg Storage Temperature Range -65~200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.0 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2245 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL

5.48. 2sc2261.pdf Size:217K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2261 DESCRIPTION ·High Power Dissipation- : PC= 80W(Max.)@TC=25? ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min.) ·Complement to Type 2SA981 APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A IBB Base Current-Continuous 3 A Collector Power Dissipation PC @TC=25? 80 W Tj Junction Temperature 150 ? Storage Temperature -65~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2261 ELECTRICAL CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 120 V

5.49. 2sc2233.pdf Size:229K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2233 DESCRIPTION ·Collector-Emitter Breakdown Voltage- :VCEO= 60V(Min) ·DC Current Gain- : hFE= 30(Min)@ (VCE= 5V, IC= 1A) ·High Collector Current ·High Collector Power Dissipation APPLICATIONS ·TV Horizontal Deflection Output Application ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 10 A IBB Base Current-Continuous 1 A Collector Power Dissipation 1.5 @ Ta=25? PC W Collector Power Dissipation 40 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2233 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise spe

5.50. 2sc2260.pdf Size:217K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2260 DESCRIPTION ·High Power Dissipation- : PC= 80W(Max.)@TC=25? ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·Complement to Type 2SA980 APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A IBB Base Current-Continuous 3 A Collector Power Dissipation PC @TC=25? 80 W Tj Junction Temperature 150 ? Storage Temperature -65~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2260 ELECTRICAL CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 100 V

5.51. 2sc2258a.pdf Size:116K _inchange_semiconductor

2SC2287
2SC2287
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2258A DESCRIPTION Ў¤ With TO-126 package Ў¤ High transition frequency fT Ў¤ High collector-emitter voltage VCEO APPLICATIONS Ў¤ High voltage general amplifier Ў¤ TV video output amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector- emitter voltage Emitter-base voltage Collector current INCH GE S AN EMIC Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE 300 300 7 0.1 0.15 1.2*1 UNIT V V V A A Collector current-peak PC Collector power dissipation TC=25Ўж 4* 2 W Tj Tstg Junction temperature Storage temperature -55Ў« 150 +150 Ўж Ўж Note :*1: Without heat sink *2: With a 100 ЎБ 100 ЎБ 2 mm A1 heat sink

5.52. 2sc2238.pdf Size:237K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2238 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO=160V(Min) ·Good Linearity of hFE ·Complement to Type 2SA968 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A IE Emitter Current- Continuous -1.5 A Total Power Dissipation PC @ TC=25? 25 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2238 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA ; IBB= 0

5.53. 2sc2239.pdf Size:318K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2239 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO=160V(Min) ·Good Linearity of hFE APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A IE Emitter Current- Continuous -1.5 A Total Power Dissipation PC @ TC=25? 25 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2239 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA ; IBB= 0 160 V V(BR)EBO Emitter-Base

5.54. 2sc2244.pdf Size:200K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2244 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IBB Base Current-Continuous 3 A Collector Power Dissipation PC @TC=25? 100 W Tj Junction Temperature 200 ? Tstg Storage Temperature Range -65~200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.0 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2244 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL

5.55. 2sc2275_2sc2275a.pdf Size:125K _inchange_semiconductor

2SC2287
2SC2287
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2275 2SC2275A DESCRIPTION Ў¤ With TO-220 package Ў¤ Complement to type 2SA985/985A Ў¤ High breakdown voltage APPLICATIONS Ў¤ For low frequency and high frequency power amplifer applicatons PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL PARAMETER VCBO VCEO INC Collector-base voltage E SEM ANG H 2SC2275 2SC2275A 2SC2275 2SC2275A OND IC CONDITIONS TOR UC VALUE 120 150 120 UNIT Open emitter V Collector-emitter voltage Open base 150 Open collector 5 1.5 3.0 0.3 TC=25Ўж 25 150 -55~150 Ўж Ўж V VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature V A A A W

5.56. 2sc2246.pdf Size:117K _inchange_semiconductor

2SC2287
2SC2287
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2246 DESCRIPTION Ў¤ With TO-3 package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Power switching Ў¤ Power amplification Ў¤ power driver PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg Collector-base voltage PARAMETER CONDITIONS Collector-emitter voltage INCH Base current Emitter-base voltage Collector current ANG SEM E Open base Tmb=25Ўж Open emitter OND IC TOR UC VALUE 450 400 5 15 30 6 100 200 -65~200 UNIT V V V A A A W Ўж Ўж Open collector Collector current-peak Total power dissipation Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 1.0 UNIT Ўж /W

5.57. 2sc2242.pdf Size:257K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2242 DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 300V(Min) ·High Current-Gain—Bandwidth Product- : fT= 20MHz(Min)@IC= 20mA APPLICATIONS ·Power amplifier applications ·Color TV sound output applications ·Recommended for sound output stage in line operated TV ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 150 mA IBB Base Current-Continuous 50 mA Collector Power Dissipation 1.5 @ Ta=25? PC W Collector Power Dissipation 25 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2242 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise spec

5.58. 2sc2258.pdf Size:135K _inchange_semiconductor

2SC2287
2SC2287
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2258 DESCRIPTION Ў¤ With TO-126 package Ў¤ High transition frequency fT Ў¤ High collector-emitter voltage VCEO APPLICATIONS Ў¤ For high breakdown voltage general amplification Ў¤ For video output amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector- emitter voltage Emitter-base voltage Collector current Collector current-peak HAN INC SEM GE Open emitter OND IC CONDITIONS TOR UC VALUE 250 250 7 0.1 0.15 1.2*1 UNIT V V V A A Open base Open collector PC Collector power dissipation TC=25Ўж 4* 2 W Tj Tstg Junction temperature Storage temperature -55Ў« 150 +150 Ўж Ўж Note :*1: Without heat sink *2: With a 100 ЎБ 100 ЎБ 2 mm A1 heat sink

5.59. 2sc2235_to-92l.pdf Size:226K _lge

2SC2287
2SC2287
2SC2235 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTER 3. BASE 4.700 5.100 2 3 1 Features 7.800 Complementary to 2SA965 B B 8.200 MAXIMUM RATINGS (TA=25? unless otherwise noted) 0.600 0.800 Symbol Parameter Value Units B 0.350 VCBOB Collector-Base Voltage 120 V B 0.550 13.800 VCEOB Collector-Emitter Voltage 120 V B 14.200 VEBOB Emitter-Base Voltage 5 V B ICB Collector Current -Continuous 0.8 A B 1.270 TYP PCB Collector Power Dissipation 0.9 W B 2.440 TJB Junction Temperature 150 ? 2.640 B B 0.000 Tstg Storage Temperature -55to+150 ? 1.600 0.300 Dimensions in inches and (millimeters) 0.350 0.450 ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) 3.700 4.100 1.280 Parameter Symbol MIN1.580 TYP MAX UNIT Test conditions 4.000 B B Collector-base breakdown voltage VB B IB =1mA,IB =0 120 V (BR)CBO C E B B Collector-emitter breakdown voltage VB B IB =10mA,IB =0 120 V (BR)CEO C B B B Emitter-Base

5.60. 2sc2216.pdf Size:234K _lge

2SC2287
2SC2287
2SC2216(NPN) TO-92 Bipolar Transistors 1. BASE TO-92 2. EMITTER 3. COLLECTOR Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 4 V Dimensions in inches and (millimeters) IC Collector Current -Continuous 50 mA PC Collector Dissipation 300 mW TJ Junction Temperature 125 ? Tstg Storage Temperature -55-125 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC= 10 mA , IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE= 100?A, IC=0 4 V Collector cut-off current ICBO VCB=50 V IE=0 0.1 ?A Emitter cut-off current IEBO VEB= 3 V, IC=0 0.1 ?A DC current gain hFE VCE=12.5V, IC=12.5 mA 40 140 Collector-emitte

5.61. 2sc2235_to-92mod.pdf Size:223K _lge

2SC2287
2SC2287
2SC2235 TO-92MOD Transistor (NPN) TO-92MOD 1 1. EMITTER 2 2. COLLECTER 3 3. BASE Features Complementary to 2SA965 5.800 6.200 MAXIMUM RATINGS (TB B=25? unless otherwise noted) A 8.400 8.800 Symbol Parameter Value Units 0.900 1.100 VB B Collector-Base Voltage 120 V CBO 0.400 0.600 VB B Collector-Emitter Voltage 120 V CEO VB B Emitter-Base Voltage 5 V 13.800 EBO 14.200 IB B Collector Current -Continuous 0.8 A C PB B Collector Power Dissipation 0.9 W C 1.500 TYP TB B Junction Temperature 150 ? J 2.900 Dimensions in inches and (millimeters) 3.100 TB B Storage Temperature -55to+150 ? stg 0.000 1.600 0.380 0.400 4.700 0.500 5.100 ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) 1.730 MIN Parameter Symbol 2.030 TYP MAX UNIT Test conditions 4.000 B B Collector-base breakdown voltage VB B IB =1mA,IB =0 120 V (BR)CBO C E B B Collector-emitter breakdown voltage VB B IB =10mA,IB =0 120 V (BR)CEO C B B

5.62. 2sc2230-2sc2230a.pdf Size:242K _lge

2SC2287
2SC2287
2SC2230/2SC2230A TO-92MOD Transistor (NPN) 1. EMITTER TO-92MOD 1 2. COLLECTOR 2 3 3. BASE Features 5.800 6.200 High voltage: VCEO=180V(2SC2230A) 8.400 High DC Current Gain 8.800 0.900 1.100 0.400 0.600 13.800 14.200 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units 1.500 TYP 2.900 Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 200 V 3.100 0.000 1.600 VCEO Collector-Emitter Voltage 2SC2230 160 0.380 V 0.400 4.700 2SC2230A 180 0.500 5.100 VEBO Emitter-Base Voltage 5 V 1.730 IC Collector Current -Continuous 0.1 A 2.030 4.000 PC Collector Power Dissipation 0.8 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55 to +150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100ВµA , IE=0 200 V IC= 10 mA, IB=0 2SC2230 160 Collector-emitter breakdown voltage

5.63. 2sc2236_to-92mod.pdf Size:339K _lge

2SC2287
2SC2287
2SC2236 TO-92MOD Transistor (NPN) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE Features 5.800 6.200 Complementary to 2SA966 and 3 Watts output Applications. 8.400 8.800 MAXIMUM RATINGS (TA=25? unless otherwise noted) 0.900 1.100 0.400 Symbol Parameter Value Units 0.600 VCBO Collector-Base Voltage 30 V 13.800 14.200 VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V 1.500 TYP IC Collector Current -Continuous 1.5 A 2.900 Dimensions in inches and (millimeters) 3.100 PC Collector Power Dissipation 0.9 W 0.000 1.600 0.380 TJ Junction Temperature 150 ? 0.400 4.700 0.500 5.100 Tstg Storage Temperature -55-150 ? 1.730 2.030 4.000 ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT V Collector-base breakdown voltage V(BR)CBO IC= 1mA , IE=0 30 Collector-emitter breakdown voltage V(BR)CEO IC= 10mA , IB=0 30 V Emitter-base breakdown voltage V(BR)EBO

5.64. 2sc2236_to-92l.pdf Size:355K _lge

2SC2287
2SC2287
2SC2236 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 2 3 5.100 1 Features 7.800 8.200 Complementary to 2SA966 and 3 Watts output Applications. 0.600 0.800 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units 0.350 0.550 VCBO Collector-Base Voltage 30 V 13.800 14.200 VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A 1.270 TYP 2.440 PC Collector Power Dissipation 0.9 W 2.640 TJ Junction Temperature 150 ? 0.000 1.600 0.300 Dimensions in inches and (millimeters) Tstg Storage Temperature -55-150 ? 0.350 0.450 3.700 4.100 ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) 280 1. 1.580 4.000 Parameter Symbol Test conditions MIN TYP MAX UNIT V Collector-base breakdown voltage V(BR)CBO IC= 1mA , IE=0 30 Collector-emitter breakdown voltage V(BR)CEO IC= 10mA , IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=

See also transistors datasheet: 2SC2280 , 2SC2281 , 2SC2282 , 2SC2283 , 2SC2284 , 2SC2284A , 2SC2285 , 2SC2286 , 2N2222A , 2SC2287M , 2SC2288 , 2SC2288M , 2SC2289 , 2SC2289M , 2SC229 , 2SC2290 , 2SC2291 .

Keywords

 2SC2287 Datasheet  2SC2287 Datenblatt  2SC2287 RoHS  2SC2287 Distributor
 2SC2287 Application Notes  2SC2287 Component  2SC2287 Circuit  2SC2287 Schematic
 2SC2287 Equivalent  2SC2287 Cross Reference  2SC2287 Data Sheet  2SC2287 Fiche Technique

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