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2SC2287
  2SC2287
  2SC2287
 
2SC2287
  2SC2287
  2SC2287
 
2SC2287
  2SC2287
 
 
List
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
2SC2287 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SC2287 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC2287

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 17

Maximum collector-base voltage |Ucb|, V: 38

Maximum collector-emitter voltage |Uce|, V: 18

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 1.5

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz: 175

Collector capacitance (Cc), pF: 17

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of 2SC2287 transistor: XM5

2SC2287 Equivalent Transistors - Cross-Reference Search

2SC2287 PDF doc:

5.1. 2sc2216_2sc2717.pdf Size:267K _toshiba

2SC2287
2SC2287
2SC2216,2SC2717 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2216,2SC2717 TV Final Picture IF Amplifier Applications Unit: mm High gain: Gpe = 33dB (typ.) (f = 45 MHz) Good linearity of h . FE Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit 2SC2216 50 Collector-base voltage VCBO V 2SC2717 30 2SC2216 45 Collector-emitter VCEO V voltage 2SC2717 25 Emitter-base voltage VEBO 4 V Collector current IC 50 mA Emitter current IE -50 mA Collector power dissipation PC 300 mW Junction temperature Tj 125 C JEDEC TO-92 Storage temperature range Tstg -55~125 C JEITA SC-43 TOSHIBA 2-5F1E Weight: 0.21 g (typ.) Electrical Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit 2SC2216 VCB = 50 V, IE = 0 Collector cut-off current ICBO ? ? 0.1 A 2SC2717 VCB = 30 V, IE = 0 Emitter cut-off current IEBO VEB = 3 V, IC = 0 ? ? 0.1 A 2SC2216 45 ? ? Collector-emitter V (BR) C

5.2. 2sc2235.pdf Size:174K _toshiba

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5.3. 2sc2230.pdf Size:202K _toshiba

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5.4. 2sc2231.pdf Size:122K _toshiba

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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.5. 2sc2270.pdf Size:94K _toshiba

2SC2287
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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.6. 2sc2229.pdf Size:211K _toshiba

2SC2287
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5.7. 2sc2240.pdf Size:347K _toshiba

2SC2287
2SC2287
2SC2240 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2240 Low Noise Audio Amplifier Applications Unit: mm The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse noise. This is recommended for the first stages of Equalizer amplifiers. Low noise: NF = 4dB (typ.) RG = 100 ?, V = 6 V, I = 100 A, CE C f = 1 kHz : NF = 0.5dB (typ.) R = 1 k?, V = 6 V, I = 100 A, G CE C f = 1 kHz Low pulse noise: Low 1/f noise High DC current gain: h = 200~700 FE High breakdown voltage: V = 120 V CEO Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit JEDEC TO-92 Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V JEITA SC-43 Emitter-base voltage VEBO 5 V TOSHIBA 2-5F1B Collector current IC 100 mA Weight: 0.21 g (typ.) Base current IB 20 mA Collector power diss

5.8. 2sc2236.pdf Size:177K _toshiba

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5.9. 2sc2242.pdf Size:112K _toshiba

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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.10. 2sc2290.pdf Size:169K _toshiba

2SC2287
2SC2287
2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) Unit in mm Specified 12.5V, 28MHz Characteristics Output Power : Po = 60W (Min.) PEP Power Gain : Gp = 11.8dB (Min.) Collector Efficiency : ?C = 35% (Min.) Intermodulation Distortion: IMD = -30dB (Max.) MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 45 V Collector-Emitter Voltage VCES 45 V Collector-Emitter Voltage VCEO 18 V Emitter-Base Voltage VEBO 4 V Collector Current IC 20 A Collector Power Dissipation PC 175 W JEDEC Junction Temperature Tj 175 C EIAJ Storage Temperature Range Tstg -65~175 C TOSHIBA 2-13B1A Weight: 5.2g 000707EAA1 TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulne

5.11. 2sc2210.pdf Size:73K _sanyo

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5.12. 2sc2223.pdf Size:222K _nec

2SC2287
2SC2287

5.13. 2sc2206.pdf Size:105K _panasonic

2SC2287
2SC2287
Transistors 2SC2206 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm Complementary to 2SA1254 2.50.1 6.90.1 (1.0) (1.5) (1.5) Features R 0.9 Optimum for RF amplification of FM/AM radios R 0.7 High transition frequency fT M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board (0.85) 0.450.05 Absolute Maximum Ratings Ta = 25C 0.550.1 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open) VCEO 20 V 3 2 1 1: Base (2.5) (2.5) Emitter-base voltage (Collector open) VEBO 5 V 2: Collector 3: Emitter Collector current IC 30 mA M-A1 Package Peak collector current ICP 60 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Electrical Characteristics Ta = 25C 3C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitt

5.14. 2sc2206_e.pdf Size:57K _panasonic

2SC2287
2SC2287
Transistor 2SC2206 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SA1254 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Optimum for RF amplification of FM/AM radios. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Absolute Maximum Ratings (Ta=25?C) 3 2 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V 2.5 2.5 Emitter to base voltage CEBO 5 V Collector current IC 30 mA 1:Base 2:Collector EIAJ:SC71 Collector power dissipation PC 400 mW 3:Emitter M Type Mold Package Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10 A, IE = 0 30 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 V E

5.15. 2sc2295.pdf Size:51K _panasonic

2SC2287
2SC2287
Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SA1022 +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 Optimum for RF amplification of FM/AM radios. High transition frequency fT. 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25?C) 0.1 to 0.3 Parameter Symbol Ratings Unit 0.4 0.2 Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage CEBO 5 V 1:Base JEDEC:TO236 2:Emitter EIAJ:SC59 Collector current IC 30 mA 3:Collector Mini Type Package Collector power dissipation PC 200 mW Junction temperature Tj 150 ?C Marking symbol : V Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 10V, IE = 0 0.1 A Forward curr

5.16. 2sc2209.pdf Size:91K _panasonic

2SC2287
2SC2287
Power Transistors 2SC2209 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 7.5+0.5 0.1 2.90.2 Complementary to 2SA0963 120 Features Large collector power dissipation PC Output of 5 W can be obtained by a complementary pair with 2SA0963 Absolute Maximum Ratings Ta = 25C Parameter Symbol Rating Unit 0.750.1 Collector-base voltage (Emitter open) VCBO 50 V 0.50.1 0.50.1 1.260.1 4.60.2 Collector-emitter voltage (Base open) VCEO 40 V 2.30.2 Emitter-base voltage (Collector open) VEBO 5 V 1: Emitter 1 2 3 2: Collector Collector current IC 1.5 A 3: Base Peak collector current ICP 3 A TO-126A-A1 Package Collector power dissipation * PC 10 W Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Note) = 25C *: T C Electrical Characteristics Ta = 25C 3C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 1 mA, IE = 050 V Collector-emitter voltage

5.17. 2sc2295_e.pdf Size:51K _panasonic

2SC2287
2SC2287
Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SA1022 +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 Optimum for RF amplification of FM/AM radios. High transition frequency fT. 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25?C) 0.1 to 0.3 Parameter Symbol Ratings Unit 0.4 0.2 Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage CEBO 5 V 1:Base JEDEC:TO236 2:Emitter EIAJ:SC59 Collector current IC 30 mA 3:Collector Mini Type Package Collector power dissipation PC 200 mW Junction temperature Tj 150 ?C Marking symbol : V Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 10V, IE = 0 0.1 A Forward curr

5.18. 2sc2258.pdf Size:71K _panasonic

2SC2287
2SC2287
Power Transistors 2SC2258 Silicon NPN triple diffusion planar type For high breakdown voltage general amplification Unit: mm 8.0+0.5 0.1 3.20.2 ? 3.160.1 Features High collector-emitter voltage (Base open) VCEO High transition frequency fT TO-126B package which requires no insulation plate for installa- tion to the heat sink Absolute Maximum Ratings Ta = 25C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 250 V 0.750.1 0.50.1 0.50.1 1.760.1 Collector-emitter voltage (Base open) VCEO 250 V 4.60.2 2.30.2 Emitter-base voltage (Collector open) VEBO 7 V 1: Emitter Collector current IC 100 mA 1 2 3 2: Collector 3: Base Peak collector current ICP 150 mA TO-126B-A1 Package Collector power dissipation PC 1.2 *1 W 4 *2 Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Note) Without heat sink *1: *2 :With a 100 ? 100 ? 2 mm Al heat sink Electrical Characteristics Ta = 25C 3C Parameter Sym

5.19. 2sc2298.pdf Size:348K _hitachi

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5.20. 2sc2267.pdf Size:39K _hitachi

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5.21. 2sc2278.pdf Size:38K _hitachi

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5.22. 2sc2237.pdf Size:131K _mitsubishi

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5.23. 2sc2233.pdf Size:120K _mospec

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A A A

5.24. 2sc2277.pdf Size:32K _no

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5.25. 2sc2221.pdf Size:426K _no

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5.26. 2sc2275.pdf Size:88K _no

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5.27. 2sc2238.pdf Size:138K _no

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5.28. 2sc2216.pdf Size:251K _secos

2SC2287
2SC2287
2SC2216 0.05 A , 50 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? Amplifier dissipation NPN Silicon G H ?Base ?Emitter ?Collector J A D Millimeter REF. Min. Max. B A 4.40 4.70 B 4.30 4.70 K C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 E C F G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 Collector ? ?? Base ?? Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 50 V Collector to Emitter Voltage VCEO 45 V Emitter to Base Voltage VEBO 4 V Collector Current - Continuous IC 50 mA Collector Power Dissipation PC 300 mW Junction, Storage Temperature TJ, TSTG 125, -55~125 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO 50 - -

5.29. 2sc2274.pdf Size:78K _secos

2SC2287
2SC2287
2SC2274 0.5 A , 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 ? High Breakdown Voltage G H ? High Current ? Low Saturation Voltage ?Emitter J ?Collector ?Base A D B CLASSIFICATION OF hFE(1) Millimeter REF. Min. Max. K Product-Rank 2SC2274-D 2SC2274-E 2SC2274-F A 4.40 4.70 B 4.30 4.70 Range 60~120 100~200 160~320 C 12.70 - D 3.30 3.81 E C F E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 Collector ?? ? Base ?? Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 0.5 A Collector Power Dissipation PC 600 mW Thermal Resistance From Junction To Ambient R?JA 208 °C / W Junction, Storage Temperature TJ, TSTG 1

5.30. 2sc2235tm.pdf Size:306K _secos

2SC2287
2SC2287
2SC2235TM 0.8A , 120V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92MOD FEATURES ? Complementary to 2SA965 A D B CLASSIFICATION OF hFE Product-Rank 2SC2235TM-O 2SC2235TM-Y K E F Range 80-160 120-240 C N G H ?Emitter ? Collector ? Base M J L Collector ?? Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 5.50 6.50 H 1.70 2.05 ?? B 8.00 9.00 J 2.70 3.20 C 12.70 14.50 K 0.85 1.15 Base D 4.50 5.30 L 1.60 Max E 0.35 0.65 M 0.00 0.40 F 0.30 0.51 N 4.00 Min ?? G 1.50 TYP. Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 120 V Collector to Emitter Voltage VCEO 120 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 0.8 A Collector Power Dissipation PC 0.9 W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (

5.31. 2sc2292.pdf Size:202K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2292 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IBB Base Current-Continuous 4 A IBM Base Current-Peak 8 A Collector Power Dissipation PC @TC=25? 80 W Tj Junction Temperature 150 ? Tstg Storage Temperature Range -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.56 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2292 ELECTRICAL CHARACTERISTICS TC=25? unless o

5.32. 2sc2243.pdf Size:232K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2243 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IBB Base Current-Continuous 2 A Collector Power Dissipation PC @TC=25? 100 W Tj Junction Temperature 200 ? Tstg Storage Temperature Range -65~200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.0 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2243 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL

5.33. 2sc2247.pdf Size:261K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2247 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 2 A Collector Power Dissipation PC 40 W @TC=25? Tj Junction Temperature 175 ? Tstg Storage Temperature Range -65~175 ? isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2247 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 100mA; L= 25mH 400 V

5.34. 2sc2262.pdf Size:217K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2262 DESCRIPTION ·High Power Dissipation- : PC= 80W(Max.)@TC=25? ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) ·Complement to Type 2SA982 APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A IBB Base Current-Continuous 3 A Collector Power Dissipation PC @TC=25? 80 W Tj Junction Temperature 150 ? Storage Temperature -65~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2262 ELECTRICAL CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 140 V

5.35. 2sc2238_2sc2238a_2sc2238b.pdf Size:125K _inchange_semiconductor

2SC2287
2SC2287
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2238 2SC2238A 2SC2238B DESCRIPTION Ў¤ With TO-220 package Ў¤ Complement to type 2SA968 Ў¤ High breakdown votage APPLICATIONS Ў¤ Power amplifier applications Ў¤ Driver stage amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL PARAMETER VCBO CHA IN Emitter-base voltage Collector current Emitter current Collector-base voltage GE S N 2SC2238A 2SC2238B 2SC2238 2SC2238A 2SC2238B 2SC2238 EMIC Open emitter Open base CONDITIONS OND TOR UC VALUE 160 180 200 160 180 200 UNIT V VCEO Collector-emitter voltage V VEBO IC IE PT Tj Tstg Open collector 5 1.5 -1.5 V A A W Ўж Ўж Total power dissipation Junction temperature Storage temperature TC=25Ўж 25 150 -55~150

5.36. 2sc2270.pdf Size:122K _inchange_semiconductor

2SC2287
2SC2287
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2270 DESCRIPTION · ·With TO-126 package ·Low collector saturation voltage ·High collector power dissipation APPLICATIONS ·Strobo flash applications ·Medimum power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 50 V VCEO Collector-emitter voltage Open base 20 V VEBO Emitter-base voltage Open collector 8 V IC Collector current (DC) 5 A ICM Collector current-peak 8 A IE Emitter current (DC) -5 A IEM Emitter current-peak -8 A Ta=25? 1.0 PC Total power dissipation W TC=25? 10 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2270 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PAR

5.37. 2sc2266.pdf Size:129K _inchange_semiconductor

2SC2287
2SC2287
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2266 DESCRIPTION ·With TO-3 package ·High dielectric strength ·Short switching time APPLICATIONS ·For switching regulator application PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector MAXIMUN RATINGS SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A IB Base current 3 A PT Total power dissipation Tmb?25? 100 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance from junction to case 1.25 ?/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2266 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MI

5.38. 2sc2209.pdf Size:233K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2209 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·High Collector Power Dissipation ·Complement to Type 2SA963 APPLICATIONS ·Designed for low frequency power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak 3 A Collector Power Dissipation PC @ TC=25? 10 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2209 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 50 V V(BR)CEO Co

5.39. 2sc2293.pdf Size:203K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2293 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IBB Base Current-Continuous 4 A IBM Base Current-Peak 8 A Collector Power Dissipation PC @TC=25? 100 W Tj Junction Temperature 150 ? Tstg Storage Temperature Range -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.25 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2293 ELECTRICAL CHARACTERISTICS TC=25? unless

5.40. 2sc2248.pdf Size:261K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2248 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current-Continuous 3 A Collector Power Dissipation PC 40 W @TC=25? Tj Junction Temperature 175 ? Tstg Storage Temperature Range -65~175 ? isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2248 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 100mA; L= 25mH 400 V

5.41. 2sc2245.pdf Size:232K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2245 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IBB Base Current-Continuous 4 A Collector Power Dissipation PC @TC=25? 100 W Tj Junction Temperature 200 ? Tstg Storage Temperature Range -65~200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.0 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2245 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL

5.42. 2sc2261.pdf Size:217K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2261 DESCRIPTION ·High Power Dissipation- : PC= 80W(Max.)@TC=25? ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min.) ·Complement to Type 2SA981 APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A IBB Base Current-Continuous 3 A Collector Power Dissipation PC @TC=25? 80 W Tj Junction Temperature 150 ? Storage Temperature -65~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2261 ELECTRICAL CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 120 V

5.43. 2sc2233.pdf Size:229K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2233 DESCRIPTION ·Collector-Emitter Breakdown Voltage- :VCEO= 60V(Min) ·DC Current Gain- : hFE= 30(Min)@ (VCE= 5V, IC= 1A) ·High Collector Current ·High Collector Power Dissipation APPLICATIONS ·TV Horizontal Deflection Output Application ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 10 A IBB Base Current-Continuous 1 A Collector Power Dissipation 1.5 @ Ta=25? PC W Collector Power Dissipation 40 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2233 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise spe

5.44. 2sc2260.pdf Size:217K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2260 DESCRIPTION ·High Power Dissipation- : PC= 80W(Max.)@TC=25? ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·Complement to Type 2SA980 APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A IBB Base Current-Continuous 3 A Collector Power Dissipation PC @TC=25? 80 W Tj Junction Temperature 150 ? Storage Temperature -65~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2260 ELECTRICAL CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 100 V

5.45. 2sc2258a.pdf Size:116K _inchange_semiconductor

2SC2287
2SC2287
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2258A DESCRIPTION Ў¤ With TO-126 package Ў¤ High transition frequency fT Ў¤ High collector-emitter voltage VCEO APPLICATIONS Ў¤ High voltage general amplifier Ў¤ TV video output amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector- emitter voltage Emitter-base voltage Collector current INCH GE S AN EMIC Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE 300 300 7 0.1 0.15 1.2*1 UNIT V V V A A Collector current-peak PC Collector power dissipation TC=25Ўж 4* 2 W Tj Tstg Junction temperature Storage temperature -55Ў« 150 +150 Ўж Ўж Note :*1: Without heat sink *2: With a 100 ЎБ 100 ЎБ 2 mm A1 heat sink

5.46. 2sc2238.pdf Size:237K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2238 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO=160V(Min) ·Good Linearity of hFE ·Complement to Type 2SA968 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A IE Emitter Current- Continuous -1.5 A Total Power Dissipation PC @ TC=25? 25 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2238 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA ; IBB= 0

5.47. 2sc2239.pdf Size:318K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2239 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO=160V(Min) ·Good Linearity of hFE APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A IE Emitter Current- Continuous -1.5 A Total Power Dissipation PC @ TC=25? 25 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2239 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA ; IBB= 0 160 V V(BR)EBO Emitter-Base

5.48. 2sc2244.pdf Size:200K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2244 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IBB Base Current-Continuous 3 A Collector Power Dissipation PC @TC=25? 100 W Tj Junction Temperature 200 ? Tstg Storage Temperature Range -65~200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.0 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2244 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL

5.49. 2sc2275_2sc2275a.pdf Size:125K _inchange_semiconductor

2SC2287
2SC2287
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2275 2SC2275A DESCRIPTION Ў¤ With TO-220 package Ў¤ Complement to type 2SA985/985A Ў¤ High breakdown voltage APPLICATIONS Ў¤ For low frequency and high frequency power amplifer applicatons PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL PARAMETER VCBO VCEO INC Collector-base voltage E SEM ANG H 2SC2275 2SC2275A 2SC2275 2SC2275A OND IC CONDITIONS TOR UC VALUE 120 150 120 UNIT Open emitter V Collector-emitter voltage Open base 150 Open collector 5 1.5 3.0 0.3 TC=25Ўж 25 150 -55~150 Ўж Ўж V VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature V A A A W

5.50. 2sc2246.pdf Size:117K _inchange_semiconductor

2SC2287
2SC2287
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2246 DESCRIPTION Ў¤ With TO-3 package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Power switching Ў¤ Power amplification Ў¤ power driver PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg Collector-base voltage PARAMETER CONDITIONS Collector-emitter voltage INCH Base current Emitter-base voltage Collector current ANG SEM E Open base Tmb=25Ўж Open emitter OND IC TOR UC VALUE 450 400 5 15 30 6 100 200 -65~200 UNIT V V V A A A W Ўж Ўж Open collector Collector current-peak Total power dissipation Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 1.0 UNIT Ўж /W

5.51. 2sc2242.pdf Size:257K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2242 DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 300V(Min) ·High Current-Gain—Bandwidth Product- : fT= 20MHz(Min)@IC= 20mA APPLICATIONS ·Power amplifier applications ·Color TV sound output applications ·Recommended for sound output stage in line operated TV ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 150 mA IBB Base Current-Continuous 50 mA Collector Power Dissipation 1.5 @ Ta=25? PC W Collector Power Dissipation 25 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2242 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise spec

5.52. 2sc2258.pdf Size:135K _inchange_semiconductor

2SC2287
2SC2287
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2258 DESCRIPTION Ў¤ With TO-126 package Ў¤ High transition frequency fT Ў¤ High collector-emitter voltage VCEO APPLICATIONS Ў¤ For high breakdown voltage general amplification Ў¤ For video output amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector- emitter voltage Emitter-base voltage Collector current Collector current-peak HAN INC SEM GE Open emitter OND IC CONDITIONS TOR UC VALUE 250 250 7 0.1 0.15 1.2*1 UNIT V V V A A Open base Open collector PC Collector power dissipation TC=25Ўж 4* 2 W Tj Tstg Junction temperature Storage temperature -55Ў« 150 +150 Ўж Ўж Note :*1: Without heat sink *2: With a 100 ЎБ 100 ЎБ 2 mm A1 heat sink

5.53. 2sc2235_to-92l.pdf Size:226K _lge

2SC2287
2SC2287
2SC2235 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTER 3. BASE 4.700 5.100 2 3 1 Features 7.800 Complementary to 2SA965 B B 8.200 MAXIMUM RATINGS (TA=25? unless otherwise noted) 0.600 0.800 Symbol Parameter Value Units B 0.350 VCBOB Collector-Base Voltage 120 V B 0.550 13.800 VCEOB Collector-Emitter Voltage 120 V B 14.200 VEBOB Emitter-Base Voltage 5 V B ICB Collector Current -Continuous 0.8 A B 1.270 TYP PCB Collector Power Dissipation 0.9 W B 2.440 TJB Junction Temperature 150 ? 2.640 B B 0.000 Tstg Storage Temperature -55to+150 ? 1.600 0.300 Dimensions in inches and (millimeters) 0.350 0.450 ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) 3.700 4.100 1.280 Parameter Symbol MIN1.580 TYP MAX UNIT Test conditions 4.000 B B Collector-base breakdown voltage VB B IB =1mA,IB =0 120 V (BR)CBO C E B B Collector-emitter breakdown voltage VB B IB =10mA,IB =0 120 V (BR)CEO C B B B Emitter-Base

5.54. 2sc2216.pdf Size:234K _lge

2SC2287
2SC2287
2SC2216(NPN) TO-92 Bipolar Transistors 1. BASE TO-92 2. EMITTER 3. COLLECTOR Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 4 V Dimensions in inches and (millimeters) IC Collector Current -Continuous 50 mA PC Collector Dissipation 300 mW TJ Junction Temperature 125 ? Tstg Storage Temperature -55-125 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC= 10 mA , IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE= 100?A, IC=0 4 V Collector cut-off current ICBO VCB=50 V IE=0 0.1 ?A Emitter cut-off current IEBO VEB= 3 V, IC=0 0.1 ?A DC current gain hFE VCE=12.5V, IC=12.5 mA 40 140 Collector-emitte

5.55. 2sc2235_to-92mod.pdf Size:223K _lge

2SC2287
2SC2287
2SC2235 TO-92MOD Transistor (NPN) TO-92MOD 1 1. EMITTER 2 2. COLLECTER 3 3. BASE Features Complementary to 2SA965 5.800 6.200 MAXIMUM RATINGS (TB B=25? unless otherwise noted) A 8.400 8.800 Symbol Parameter Value Units 0.900 1.100 VB B Collector-Base Voltage 120 V CBO 0.400 0.600 VB B Collector-Emitter Voltage 120 V CEO VB B Emitter-Base Voltage 5 V 13.800 EBO 14.200 IB B Collector Current -Continuous 0.8 A C PB B Collector Power Dissipation 0.9 W C 1.500 TYP TB B Junction Temperature 150 ? J 2.900 Dimensions in inches and (millimeters) 3.100 TB B Storage Temperature -55to+150 ? stg 0.000 1.600 0.380 0.400 4.700 0.500 5.100 ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) 1.730 MIN Parameter Symbol 2.030 TYP MAX UNIT Test conditions 4.000 B B Collector-base breakdown voltage VB B IB =1mA,IB =0 120 V (BR)CBO C E B B Collector-emitter breakdown voltage VB B IB =10mA,IB =0 120 V (BR)CEO C B B

5.56. 2sc2230-2sc2230a.pdf Size:242K _lge

2SC2287
2SC2287
2SC2230/2SC2230A TO-92MOD Transistor (NPN) 1. EMITTER TO-92MOD 1 2. COLLECTOR 2 3 3. BASE Features 5.800 6.200 High voltage: VCEO=180V(2SC2230A) 8.400 High DC Current Gain 8.800 0.900 1.100 0.400 0.600 13.800 14.200 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units 1.500 TYP 2.900 Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 200 V 3.100 0.000 1.600 VCEO Collector-Emitter Voltage 2SC2230 160 0.380 V 0.400 4.700 2SC2230A 180 0.500 5.100 VEBO Emitter-Base Voltage 5 V 1.730 IC Collector Current -Continuous 0.1 A 2.030 4.000 PC Collector Power Dissipation 0.8 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55 to +150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100ВµA , IE=0 200 V IC= 10 mA, IB=0 2SC2230 160 Collector-emitter breakdown voltage

5.57. 2sc2236_to-92mod.pdf Size:339K _lge

2SC2287
2SC2287
2SC2236 TO-92MOD Transistor (NPN) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE Features 5.800 6.200 Complementary to 2SA966 and 3 Watts output Applications. 8.400 8.800 MAXIMUM RATINGS (TA=25? unless otherwise noted) 0.900 1.100 0.400 Symbol Parameter Value Units 0.600 VCBO Collector-Base Voltage 30 V 13.800 14.200 VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V 1.500 TYP IC Collector Current -Continuous 1.5 A 2.900 Dimensions in inches and (millimeters) 3.100 PC Collector Power Dissipation 0.9 W 0.000 1.600 0.380 TJ Junction Temperature 150 ? 0.400 4.700 0.500 5.100 Tstg Storage Temperature -55-150 ? 1.730 2.030 4.000 ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT V Collector-base breakdown voltage V(BR)CBO IC= 1mA , IE=0 30 Collector-emitter breakdown voltage V(BR)CEO IC= 10mA , IB=0 30 V Emitter-base breakdown voltage V(BR)EBO

5.58. 2sc2236_to-92l.pdf Size:355K _lge

2SC2287
2SC2287
2SC2236 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 2 3 5.100 1 Features 7.800 8.200 Complementary to 2SA966 and 3 Watts output Applications. 0.600 0.800 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units 0.350 0.550 VCBO Collector-Base Voltage 30 V 13.800 14.200 VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A 1.270 TYP 2.440 PC Collector Power Dissipation 0.9 W 2.640 TJ Junction Temperature 150 ? 0.000 1.600 0.300 Dimensions in inches and (millimeters) Tstg Storage Temperature -55-150 ? 0.350 0.450 3.700 4.100 ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) 280 1. 1.580 4.000 Parameter Symbol Test conditions MIN TYP MAX UNIT V Collector-base breakdown voltage V(BR)CBO IC= 1mA , IE=0 30 Collector-emitter breakdown voltage V(BR)CEO IC= 10mA , IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=

See also transistors datasheet: 2SC2280 , 2SC2281 , 2SC2282 , 2SC2283 , 2SC2284 , 2SC2284A , 2SC2285 , 2SC2286 , 2N2222A , 2SC2287M , 2SC2288 , 2SC2288M , 2SC2289 , 2SC2289M , 2SC229 , 2SC2290 , 2SC2291 .

Keywords

 2SC2287 Datasheet  2SC2287 Datenblatt  2SC2287 RoHS  2SC2287 Distributor
 2SC2287 Application Notes  2SC2287 Component  2SC2287 Circuit  2SC2287 Schematic
 2SC2287 Equivalent  2SC2287 Cross Reference  2SC2287 Data Sheet  2SC2287 Fiche Technique

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