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2SC2287
  2SC2287
  2SC2287
 
2SC2287
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2SC2287
  2SC2287
 
 
List
100DA025D .. 2N100
2N1000 .. 2N119
2N1190 .. 2N1412A
2N1413 .. 2N1655
2N1656 .. 2N1990R
2N1990S .. 2N2221A
2N2221ACSM .. 2N2484ACSM
2N2484ADCSM .. 2N2773
2N2774 .. 2N2970
2N2971 .. 2N3241A
2N3242 .. 2N3506
2N3506L .. 2N3791SM
2N3792 .. 2N4057
2N4058 .. 2N457A
2N457B .. 2N5101
2N5102 .. 2N5356
2N5357 .. 2N5704
2N5705 .. 2N6022
2N6024 .. 2N634A
2N635 .. 2N6655-2
2N6655A .. 2N819
2N82 .. 2S120
2S121 .. 2SA1079
2SA108 .. 2SA1282
2SA1282A .. 2SA1408R
2SA1409 .. 2SA1577W
2SA1578 .. 2SA183
2SA1830 .. 2SA249
2SA25 .. 2SA496Y
2SA497 .. 2SA725
2SA726 .. 2SA927
2SA928 .. 2SB1102
2SB1103 .. 2SB1261
2SB1261-Z .. 2SB1555B
2SB1555C .. 2SB311
2SB312 .. 2SB511F
2SB512 .. 2SB696K
2SB697 .. 2SB858C
2SB858D .. 2SC1044
2SC1045 .. 2SC1253
2SC1254 .. 2SC1469A
2SC146A .. 2SC169
2SC1698 .. 2SC1924
2SC1925 .. 2SC2196
2SC2197 .. 2SC24
2SC240 .. 2SC2630
2SC2631 .. 2SC2821
2SC2821E .. 2SC306
2SC3060 .. 2SC3262
2SC3263 .. 2SC3443
2SC3444 .. 2SC3617
2SC3618 .. 2SC3780C
2SC3780D .. 2SC3981
2SC3982 .. 2SC4163L
2SC4163M .. 2SC4422
2SC4423 .. 2SC4725
2SC4726 .. 2SC5031N
2SC5031O .. 2SC5323
2SC5324 .. 2SC569
2SC5690 .. 2SC647P
2SC648 .. 2SC847
2SC848 .. 2SD1020G
2SD1020O .. 2SD1218
2SD1219 .. 2SD1402O
2SD1403 .. 2SD1618E
2SD1618S .. 2SD1803
2SD1803Q .. 2SD2017
2SD2018 .. 2SD2342B
2SD2342C .. 2SD313E
2SD313F .. 2SD532
2SD533 .. 2SD732
2SD732K .. 2SD931
2SD932 .. 3DD5024P
3DD5032 .. 40412V2
40413 .. 9013F
9013G .. AC180KL
AC180L .. AD462
AD463 .. AM1011-075
AM1011-300 .. BC107CSM
BC107P .. BC206C
BC207 .. BC307C
BC307VI .. BC418VI
BC419 .. BC558A
BC558AP .. BC848CW
BC848CWT1 .. BCP628C
BCP669A .. BCW66KG
BCW66KH .. BCX78-10
BCX78-7 .. BD149
BD149-10 .. BD281
BD282 .. BD515
BD515-1 .. BD814A
BD815 .. BDT60AF
BDT60B .. BDX37
BDX40 .. BF118
BF119 .. BF345
BF355 .. BF642
BF642P .. BFN23R
BFN24 .. BFR81
BFR81TO5 .. BFV10
BFV11 .. BFX79
BFX80 .. BLW46
BLW47 .. BSP52
BSP52T1 .. BSW21
BSW21A .. BT2604
BT2604T .. BTN2222AL3
BTN2222AN3 .. BU526A-7
BU526A-8 .. BUL704
BUL705 .. BUV46
BUV46A .. BUX82-5
BUX82-6 .. C9083
C9084 .. CENU52
CENU55 .. CJD340
CJD3439 .. CMPTA13
CMPTA14 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM5
D44VM6 .. DH3724CN
DH3725CD .. DTA123EE
DTA123EEA .. DTC143TEA
DTC143TKA .. DXTP03200BP5
DXTP19020DP5 .. ECG344
ECG345 .. ES3126
ESM1000 .. FA1L3N
FA1L4L .. FJPF13009
FJPF3305 .. FMMT5088
FMMT5089 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34-15
GFT34-30 .. GT2765
GT2766 .. HA7507
HA7510 .. HMBT2222A
HMBT2369 .. HUN2115
HUN2116 .. JA101P
JA101Q .. KD338
KD3442 .. KRA557F
KRA557U .. KRC416
KRC416E .. KSA1241O
KSA1241Y .. KSC2223Y
KSC2233 .. KSC945L
KSC945O .. KSP25
KSP26 .. KT3128B-1
KT3128B1 .. KT501V
KT502A .. KT808A
KT808A3 .. KT837A
KT837A1-IM .. KT997B
KT999A .. KTC3883
KTC3911 .. L8550HQLT1G
L8550HRLT1G .. MA8001
MA8002 .. MHQ2221
MHQ2222 .. MJD117L
MJD117T4 .. MJE488
MJE49 .. MM4429
MM4430 .. MMBT5127
MMBT5128 .. MMUN2214L
MMUN2215 .. MP4051
MP4052 .. MPQ5857
MPQ5858 .. MPS918R
MPS929 .. MRF449
MRF450 .. NA01EH
NA01EI .. NB011FV
NB011FY .. NB123H
NB123HH .. NB323Y
NB323Z .. NPS3707
NPS3708 .. NSS35200CF8T1G
NSS35200MR6T1G .. OC450
OC450K .. PBSS304NX
PBSS304NZ .. PEMB10
PEMB11 .. PN3906
PN3906R .. PZT5401
PZT5551 .. RN1116MFV
RN1117 .. RN2302
RN2303 .. RS7241
RS7406 .. SCE308
SCE309 .. SFT288
SFT298 .. SPS6012
SPS8050 .. ST2SB772U
ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
TEC9013H .. TIP50J3
TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
2SC2287 All Transistors Datasheet. BJT, Power MOSFET, IGBT, IC Catalog
 

2SC2287 Transistor (IC) Datasheet. Cross Reference Search. 2SC2287 Equivalent

Type Designator: 2SC2287

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 17

Maximum collector-base voltage |Ucb|, V: 38

Maximum collector-emitter voltage |Uce|, V: 18

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 1.5

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz: 175

Collector capacitance (Cc), pF: 17

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of 2SC2287 transistor: XM5

2SC2287 Equivalent Transistors - Cross-Reference Search

 

2SC2287 PDF doc:

5.1. 2sc2230.pdf Size:202K _toshiba

2SC2287
2SC2287

5.2. 2sc2216_2sc2717.pdf Size:267K _toshiba

2SC2287
2SC2287
2SC2216,2SC2717 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2216,2SC2717 TV Final Picture IF Amplifier Applications Unit: mm High gain: Gpe = 33dB (typ.) (f = 45 MHz) Good linearity of h . FE Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit 2SC2216 50 Collector-base voltage VCBO V 2SC2717 30 2SC2216 45 Collector-emitter VCEO V voltage 2SC2717 25 Emitter-base voltage VEBO 4 V Collector current IC 50 mA Emitter current IE -50 mA Collector power dissipation PC 300 mW Junction temperature Tj 125 C JEDEC TO-92 Storage temperature range Tstg -55~125 C JEITA SC-43 TOSHIBA 2-5F1E Weight: 0.21 g (typ.) Electrical Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit 2SC2216 VCB = 50 V, IE = 0 Collector cut-off current ICBO ? ? 0.1 A 2SC2717 VCB = 30 V, IE = 0 Emitter cut-off current IEBO VEB = 3 V, IC = 0 ? ? 0.1 A 2SC2216 45 ? ? Collector-emitter V (BR) C

5.3. 2sc2240.pdf Size:347K _toshiba

2SC2287
2SC2287
2SC2240 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2240 Low Noise Audio Amplifier Applications Unit: mm The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse noise. This is recommended for the first stages of Equalizer amplifiers. Low noise: NF = 4dB (typ.) RG = 100 ?, V = 6 V, I = 100 A, CE C f = 1 kHz : NF = 0.5dB (typ.) R = 1 k?, V = 6 V, I = 100 A, G CE C f = 1 kHz Low pulse noise: Low 1/f noise High DC current gain: h = 200~700 FE High breakdown voltage: V = 120 V CEO Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit JEDEC TO-92 Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V JEITA SC-43 Emitter-base voltage VEBO 5 V TOSHIBA 2-5F1B Collector current IC 100 mA Weight: 0.21 g (typ.) Base current IB 20 mA Collector power diss

5.4. 2sc2270.pdf Size:94K _toshiba

2SC2287
2SC2287
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.5. 2sc2235.pdf Size:174K _toshiba

2SC2287
2SC2287

5.6. 2sc2290.pdf Size:169K _toshiba

2SC2287
2SC2287
2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) Unit in mm Specified 12.5V, 28MHz Characteristics Output Power : Po = 60W (Min.) PEP Power Gain : Gp = 11.8dB (Min.) Collector Efficiency : ?C = 35% (Min.) Intermodulation Distortion: IMD = -30dB (Max.) MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 45 V Collector-Emitter Voltage VCES 45 V Collector-Emitter Voltage VCEO 18 V Emitter-Base Voltage VEBO 4 V Collector Current IC 20 A Collector Power Dissipation PC 175 W JEDEC Junction Temperature Tj 175 C EIAJ Storage Temperature Range Tstg -65~175 C TOSHIBA 2-13B1A Weight: 5.2g 000707EAA1 TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulne

5.7. 2sc2231.pdf Size:122K _toshiba

2SC2287
2SC2287
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.8. 2sc2242.pdf Size:112K _toshiba

2SC2287
2SC2287
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.9. 2sc2236.pdf Size:177K _toshiba

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2SC2287

5.10. 2sc2229.pdf Size:211K _toshiba

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2SC2287

5.11. 2sc2210.pdf Size:73K _sanyo

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2SC2287

5.12. 2sc2223.pdf Size:222K _nec

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2SC2287

5.13. 2sc2206_e.pdf Size:57K _panasonic

2SC2287
2SC2287
Transistor 2SC2206 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SA1254 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Optimum for RF amplification of FM/AM radios. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Absolute Maximum Ratings (Ta=25?C) 3 2 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V 2.5 2.5 Emitter to base voltage CEBO 5 V Collector current IC 30 mA 1:Base 2:Collector EIAJ:SC71 Collector power dissipation PC 400 mW 3:Emitter M Type Mold Package Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10 A, IE = 0 30 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 V E

5.14. 2sc2295_e.pdf Size:51K _panasonic

2SC2287
2SC2287
Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SA1022 +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 Optimum for RF amplification of FM/AM radios. High transition frequency fT. 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25?C) 0.1 to 0.3 Parameter Symbol Ratings Unit 0.4 0.2 Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage CEBO 5 V 1:Base JEDEC:TO236 2:Emitter EIAJ:SC59 Collector current IC 30 mA 3:Collector Mini Type Package Collector power dissipation PC 200 mW Junction temperature Tj 150 ?C Marking symbol : V Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 10V, IE = 0 0.1 A Forward curr

5.15. 2sc2258.pdf Size:71K _panasonic

2SC2287
2SC2287
Power Transistors 2SC2258 Silicon NPN triple diffusion planar type For high breakdown voltage general amplification Unit: mm 8.0+0.5 0.1 3.20.2 ? 3.160.1 Features High collector-emitter voltage (Base open) VCEO High transition frequency fT TO-126B package which requires no insulation plate for installa- tion to the heat sink Absolute Maximum Ratings Ta = 25C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 250 V 0.750.1 0.50.1 0.50.1 1.760.1 Collector-emitter voltage (Base open) VCEO 250 V 4.60.2 2.30.2 Emitter-base voltage (Collector open) VEBO 7 V 1: Emitter Collector current IC 100 mA 1 2 3 2: Collector 3: Base Peak collector current ICP 150 mA TO-126B-A1 Package Collector power dissipation PC 1.2 *1 W 4 *2 Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Note) Without heat sink *1: *2 :With a 100 ? 100 ? 2 mm Al heat sink Electrical Characteristics Ta = 25C 3C Parameter Sym

5.16. 2sc2295.pdf Size:51K _panasonic

2SC2287
2SC2287
Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SA1022 +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 Optimum for RF amplification of FM/AM radios. High transition frequency fT. 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25?C) 0.1 to 0.3 Parameter Symbol Ratings Unit 0.4 0.2 Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage CEBO 5 V 1:Base JEDEC:TO236 2:Emitter EIAJ:SC59 Collector current IC 30 mA 3:Collector Mini Type Package Collector power dissipation PC 200 mW Junction temperature Tj 150 ?C Marking symbol : V Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 10V, IE = 0 0.1 A Forward curr

5.17. 2sc2209.pdf Size:91K _panasonic

2SC2287
2SC2287
Power Transistors 2SC2209 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 7.5+0.5 0.1 2.90.2 Complementary to 2SA0963 120 Features Large collector power dissipation PC Output of 5 W can be obtained by a complementary pair with 2SA0963 Absolute Maximum Ratings Ta = 25C Parameter Symbol Rating Unit 0.750.1 Collector-base voltage (Emitter open) VCBO 50 V 0.50.1 0.50.1 1.260.1 4.60.2 Collector-emitter voltage (Base open) VCEO 40 V 2.30.2 Emitter-base voltage (Collector open) VEBO 5 V 1: Emitter 1 2 3 2: Collector Collector current IC 1.5 A 3: Base Peak collector current ICP 3 A TO-126A-A1 Package Collector power dissipation * PC 10 W Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Note) = 25C *: T C Electrical Characteristics Ta = 25C 3C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 1 mA, IE = 050 V Collector-emitter voltage

5.18. 2sc2206.pdf Size:105K _panasonic

2SC2287
2SC2287
Transistors 2SC2206 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm Complementary to 2SA1254 2.50.1 6.90.1 (1.0) (1.5) (1.5) Features R 0.9 Optimum for RF amplification of FM/AM radios R 0.7 High transition frequency fT M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board (0.85) 0.450.05 Absolute Maximum Ratings Ta = 25C 0.550.1 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open) VCEO 20 V 3 2 1 1: Base (2.5) (2.5) Emitter-base voltage (Collector open) VEBO 5 V 2: Collector 3: Emitter Collector current IC 30 mA M-A1 Package Peak collector current ICP 60 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Electrical Characteristics Ta = 25C 3C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitt

5.19. 2sc2235.pdf Size:100K _utc

2SC2287
2SC2287
UNISONIC TECHNOLOGIES CO., LTD 2SC2235 NPN SILICON TRANSISTOR AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS 1 TO-92 ? FEATURES * Complimentary to UTC 2SA965 1 TO-92NL ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC2235L-x-T92-B 2SC2235G-x-T92-B TO-92 E C B Tape Box 2SC2235L-x-T92-K 2SC2235G-x-T92-K TO-92 E C B Bulk 2SC2235L-x-T92-R 2SC2235G-x-T92-R TO-92 E C B Tape Reel 2SC2235L-x-T9N-B 2SC2235G-x-T9N-B TO-92NL E C B Tape Box 2SC2235L-x-T9N-K 2SC2235G-x-T9N-K TO-92NL E C B Bulk 2SC2235L-x-T9N-R 2SC2235G-x-T9N-R TO-92NL E C B Tape Reel Note: Pin Assignment: B: BASE C: COLLECTOR E: EMITTE www.unisonic.com.tw 1 of 4 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R211-012.C 2SC2235 NPN SILICON TRANSISTOR ? ABSOLUTE MAXIMUM RATING ( TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V 120 V CBO Collector-Emitter Voltage

5.20. 2sc2278.pdf Size:38K _hitachi

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5.21. 2sc2298.pdf Size:348K _hitachi

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5.22. 2sc2267.pdf Size:39K _hitachi

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5.23. 2sc2237.pdf Size:131K _mitsubishi

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5.24. 2sc2233.pdf Size:120K _mospec

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A A A

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5.27. 2sc2221.pdf Size:426K _no

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5.28. 2sc2275.pdf Size:88K _no

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5.29. 2sc2216.pdf Size:251K _secos

2SC2287
2SC2287
2SC2216 0.05 A , 50 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? Amplifier dissipation NPN Silicon G H ?Base ?Emitter ?Collector J A D Millimeter REF. Min. Max. B A 4.40 4.70 B 4.30 4.70 K C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 E C F G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 Collector ? ?? Base ?? Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 50 V Collector to Emitter Voltage VCEO 45 V Emitter to Base Voltage VEBO 4 V Collector Current - Continuous IC 50 mA Collector Power Dissipation PC 300 mW Junction, Storage Temperature TJ, TSTG 125, -55~125 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO 50 - -

5.30. 2sc2274.pdf Size:78K _secos

2SC2287
2SC2287
2SC2274 0.5 A , 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 ? High Breakdown Voltage G H ? High Current ? Low Saturation Voltage ?Emitter J ?Collector ?Base A D B CLASSIFICATION OF hFE(1) Millimeter REF. Min. Max. K Product-Rank 2SC2274-D 2SC2274-E 2SC2274-F A 4.40 4.70 B 4.30 4.70 Range 60~120 100~200 160~320 C 12.70 - D 3.30 3.81 E C F E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 Collector ?? ? Base ?? Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 0.5 A Collector Power Dissipation PC 600 mW Thermal Resistance From Junction To Ambient R?JA 208 °C / W Junction, Storage Temperature TJ, TSTG 1

5.31. 2sc2235tm.pdf Size:306K _secos

2SC2287
2SC2287
2SC2235TM 0.8A , 120V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92MOD FEATURES ? Complementary to 2SA965 A D B CLASSIFICATION OF hFE Product-Rank 2SC2235TM-O 2SC2235TM-Y K E F Range 80-160 120-240 C N G H ?Emitter ? Collector ? Base M J L Collector ?? Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 5.50 6.50 H 1.70 2.05 ?? B 8.00 9.00 J 2.70 3.20 C 12.70 14.50 K 0.85 1.15 Base D 4.50 5.30 L 1.60 Max E 0.35 0.65 M 0.00 0.40 F 0.30 0.51 N 4.00 Min ?? G 1.50 TYP. Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 120 V Collector to Emitter Voltage VCEO 120 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 0.8 A Collector Power Dissipation PC 0.9 W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (

5.32. 2sc2258a.pdf Size:146K _jmnic

2SC2287
2SC2287
JMnic Product Specification Silicon NPN Power Transistors 2SC2258A DESCRIPTION · ·With TO-126 package ·High transition frequency fT ·High collector-emitter voltage VCEO APPLICATIONS ·High voltage general amplifier ·TV video output amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector- emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 0.1 A ICM Collector current-peak 0.15 A 1.2*1 PC Collector power dissipation TC=25? W 4*2 Tj Junction temperature 150 ? Tstg Storage temperature -55~+150 ? Note :*1: Without heat sink *2: With a 100 ? 100 ? 2 mm A1 heat sink JMnic Product Specification Silicon NPN Power Transistors 2SC2258A CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

5.33. 2sc2238a.pdf Size:158K _jmnic

2SC2287
2SC2287
JMnic Product Specification Silicon NPN Power Transistors 2SC2238 2SC2238A 2SC2238B DESCRIPTION ·With TO-220 package ·Complement to type 2SA968 ·High breakdown votage APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SC2238 160 VCBO 2SC2238A Open emitter 180 V Collector-base voltage 2SC2238B 200 2SC2238 160 VCEO 2SC2238A Open base 180 V Collector-emitter voltage 2SC2238B 200 VEBO Emitter-base voltage Open collector 5 V IC Collector current 1.5 A IE Emitter current -1.5 A PT Total power dissipation TC=25? 25 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon NPN Power Transistors 2SC2238 2SC2238A 2SC2238B CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN

5.34. 2sc2258.pdf Size:166K _jmnic

2SC2287
2SC2287
JMnic Product Specification Silicon NPN Power Transistors 2SC2258 DESCRIPTION · ·With TO-126 package ·High transition frequency fT ·High collector-emitter voltage VCEO APPLICATIONS ·For high breakdown voltage general amplification ·For video output amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 250 V VCEO Collector- emitter voltage Open base 250 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 0.1 A ICM Collector current-peak 0.15 A 1.2*1 PC Collector power dissipation TC=25? W 4*2 Tj Junction temperature 150 ? Tstg Storage temperature -55~+150 ? Note :*1: Without heat sink *2: With a 100 ? 100 ? 2 mm A1 heat sink JMnic Product Specification Silicon NPN Power Transistors 2SC2258 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAME

5.35. 2sc2246.pdf Size:121K _jmnic

2SC2287
2SC2287
Product Specification www.jmnic.com Silicon Power Transistors 2SC2246 DESCRIPTION ·High voltage ,high speed ·With TO-3 package APPLICATIONS ·Power switching ·Power amplification ·power driver PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 450 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 15 A ICM Collector current-Peak 30 A IB Base current 6 A PT Total power dissipation Tmb=25? 100 W Tj Junction temperature 200 ? Tstg Storage temperature -65~200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-mb Thermal resistance from junction to mounting base 1.0 ?/W JMnic Product Specification www.jmnic.com Silicon Power Transistors 2SC2246 CHARACTERISTICS Tj=25? unless otherwise specified

5.36. 2sc2275.pdf Size:156K _jmnic

2SC2287
2SC2287
JMnic Product Specification Silicon NPN Power Transistors 2SC2275 2SC2275A DESCRIPTION ·With TO-220 package ·Complement to type 2SA985/985A ·High breakdown voltage APPLICATIONS ·For low frequency and high frequency power amplifer applicatons PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SC2275 120 VCBO Collector-base voltage Open emitter V 2SC2275A 150 2SC2275 120 VCEO Collector-emitter voltage Open base V 2SC2275A 150 VEBO Emitter-base voltage Open collector 5 V IC Collector current 1.5 A ICM Collector current-peak 3.0 A IB Base current 0.3 A PC Collector power dissipation TC=25? 25 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon NPN Power Transistors 2SC2275 2SC2275A CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MA

5.37. 2sc2262.pdf Size:217K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2262 DESCRIPTION ·High Power Dissipation- : PC= 80W(Max.)@TC=25? ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) ·Complement to Type 2SA982 APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A IBB Base Current-Continuous 3 A Collector Power Dissipation PC @TC=25? 80 W Tj Junction Temperature 150 ? Storage Temperature -65~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2262 ELECTRICAL CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 140 V

5.38. 2sc2239.pdf Size:318K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2239 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO=160V(Min) ·Good Linearity of hFE APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A IE Emitter Current- Continuous -1.5 A Total Power Dissipation PC @ TC=25? 25 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2239 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA ; IBB= 0 160 V V(BR)EBO Emitter-Base

5.39. 2sc2266.pdf Size:129K _inchange_semiconductor

2SC2287
2SC2287
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2266 DESCRIPTION ·With TO-3 package ·High dielectric strength ·Short switching time APPLICATIONS ·For switching regulator application PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector MAXIMUN RATINGS SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A IB Base current 3 A PT Total power dissipation Tmb?25? 100 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance from junction to case 1.25 ?/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2266 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MI

5.40. 2sc2244.pdf Size:200K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2244 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IBB Base Current-Continuous 3 A Collector Power Dissipation PC @TC=25? 100 W Tj Junction Temperature 200 ? Tstg Storage Temperature Range -65~200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.0 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2244 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL

5.41. 2sc2270.pdf Size:122K _inchange_semiconductor

2SC2287
2SC2287
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2270 DESCRIPTION · ·With TO-126 package ·Low collector saturation voltage ·High collector power dissipation APPLICATIONS ·Strobo flash applications ·Medimum power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 50 V VCEO Collector-emitter voltage Open base 20 V VEBO Emitter-base voltage Open collector 8 V IC Collector current (DC) 5 A ICM Collector current-peak 8 A IE Emitter current (DC) -5 A IEM Emitter current-peak -8 A Ta=25? 1.0 PC Total power dissipation W TC=25? 10 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2270 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PAR

5.42. 2sc2260.pdf Size:217K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2260 DESCRIPTION ·High Power Dissipation- : PC= 80W(Max.)@TC=25? ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·Complement to Type 2SA980 APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A IBB Base Current-Continuous 3 A Collector Power Dissipation PC @TC=25? 80 W Tj Junction Temperature 150 ? Storage Temperature -65~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2260 ELECTRICAL CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 100 V

5.43. 2sc2293.pdf Size:203K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2293 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IBB Base Current-Continuous 4 A IBM Base Current-Peak 8 A Collector Power Dissipation PC @TC=25? 100 W Tj Junction Temperature 150 ? Tstg Storage Temperature Range -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.25 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2293 ELECTRICAL CHARACTERISTICS TC=25? unless

5.44. 2sc2261.pdf Size:217K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2261 DESCRIPTION ·High Power Dissipation- : PC= 80W(Max.)@TC=25? ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min.) ·Complement to Type 2SA981 APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A IBB Base Current-Continuous 3 A Collector Power Dissipation PC @TC=25? 80 W Tj Junction Temperature 150 ? Storage Temperature -65~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2261 ELECTRICAL CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 120 V

5.45. 2sc2258a.pdf Size:116K _inchange_semiconductor

2SC2287
2SC2287
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2258A DESCRIPTION Ў¤ With TO-126 package Ў¤ High transition frequency fT Ў¤ High collector-emitter voltage VCEO APPLICATIONS Ў¤ High voltage general amplifier Ў¤ TV video output amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector- emitter voltage Emitter-base voltage Collector current INCH GE S AN EMIC Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE 300 300 7 0.1 0.15 1.2*1 UNIT V V V A A Collector current-peak PC Collector power dissipation TC=25Ўж 4* 2 W Tj Tstg Junction temperature Storage temperature -55Ў« 150 +150 Ўж Ўж Note :*1: Without heat sink *2: With a 100 ЎБ 100 ЎБ 2 mm A1 heat sink

5.46. 2sc2292.pdf Size:202K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2292 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IBB Base Current-Continuous 4 A IBM Base Current-Peak 8 A Collector Power Dissipation PC @TC=25? 80 W Tj Junction Temperature 150 ? Tstg Storage Temperature Range -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.56 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2292 ELECTRICAL CHARACTERISTICS TC=25? unless o

5.47. 2sc2238.pdf Size:237K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2238 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO=160V(Min) ·Good Linearity of hFE ·Complement to Type 2SA968 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A IE Emitter Current- Continuous -1.5 A Total Power Dissipation PC @ TC=25? 25 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2238 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA ; IBB= 0

5.48. 2sc2248.pdf Size:261K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2248 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current-Continuous 3 A Collector Power Dissipation PC 40 W @TC=25? Tj Junction Temperature 175 ? Tstg Storage Temperature Range -65~175 ? isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2248 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 100mA; L= 25mH 400 V

5.49. 2sc2238_2sc2238a_2sc2238b.pdf Size:125K _inchange_semiconductor

2SC2287
2SC2287
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2238 2SC2238A 2SC2238B DESCRIPTION Ў¤ With TO-220 package Ў¤ Complement to type 2SA968 Ў¤ High breakdown votage APPLICATIONS Ў¤ Power amplifier applications Ў¤ Driver stage amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL PARAMETER VCBO CHA IN Emitter-base voltage Collector current Emitter current Collector-base voltage GE S N 2SC2238A 2SC2238B 2SC2238 2SC2238A 2SC2238B 2SC2238 EMIC Open emitter Open base CONDITIONS OND TOR UC VALUE 160 180 200 160 180 200 UNIT V VCEO Collector-emitter voltage V VEBO IC IE PT Tj Tstg Open collector 5 1.5 -1.5 V A A W Ўж Ўж Total power dissipation Junction temperature Storage temperature TC=25Ўж 25 150 -55~150

5.50. 2sc2233.pdf Size:229K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2233 DESCRIPTION ·Collector-Emitter Breakdown Voltage- :VCEO= 60V(Min) ·DC Current Gain- : hFE= 30(Min)@ (VCE= 5V, IC= 1A) ·High Collector Current ·High Collector Power Dissipation APPLICATIONS ·TV Horizontal Deflection Output Application ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 10 A IBB Base Current-Continuous 1 A Collector Power Dissipation 1.5 @ Ta=25? PC W Collector Power Dissipation 40 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2233 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise spe

5.51. 2sc2258.pdf Size:135K _inchange_semiconductor

2SC2287
2SC2287
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2258 DESCRIPTION Ў¤ With TO-126 package Ў¤ High transition frequency fT Ў¤ High collector-emitter voltage VCEO APPLICATIONS Ў¤ For high breakdown voltage general amplification Ў¤ For video output amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector- emitter voltage Emitter-base voltage Collector current Collector current-peak HAN INC SEM GE Open emitter OND IC CONDITIONS TOR UC VALUE 250 250 7 0.1 0.15 1.2*1 UNIT V V V A A Open base Open collector PC Collector power dissipation TC=25Ўж 4* 2 W Tj Tstg Junction temperature Storage temperature -55Ў« 150 +150 Ўж Ўж Note :*1: Without heat sink *2: With a 100 ЎБ 100 ЎБ 2 mm A1 heat sink

5.52. 2sc2275_2sc2275a.pdf Size:125K _inchange_semiconductor

2SC2287
2SC2287
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2275 2SC2275A DESCRIPTION Ў¤ With TO-220 package Ў¤ Complement to type 2SA985/985A Ў¤ High breakdown voltage APPLICATIONS Ў¤ For low frequency and high frequency power amplifer applicatons PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL PARAMETER VCBO VCEO INC Collector-base voltage E SEM ANG H 2SC2275 2SC2275A 2SC2275 2SC2275A OND IC CONDITIONS TOR UC VALUE 120 150 120 UNIT Open emitter V Collector-emitter voltage Open base 150 Open collector 5 1.5 3.0 0.3 TC=25Ўж 25 150 -55~150 Ўж Ўж V VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature V A A A W

5.53. 2sc2242.pdf Size:257K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2242 DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 300V(Min) ·High Current-Gain—Bandwidth Product- : fT= 20MHz(Min)@IC= 20mA APPLICATIONS ·Power amplifier applications ·Color TV sound output applications ·Recommended for sound output stage in line operated TV ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 150 mA IBB Base Current-Continuous 50 mA Collector Power Dissipation 1.5 @ Ta=25? PC W Collector Power Dissipation 25 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2242 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise spec

5.54. 2sc2247.pdf Size:261K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2247 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 2 A Collector Power Dissipation PC 40 W @TC=25? Tj Junction Temperature 175 ? Tstg Storage Temperature Range -65~175 ? isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2247 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 100mA; L= 25mH 400 V

5.55. 2sc2245.pdf Size:232K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2245 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IBB Base Current-Continuous 4 A Collector Power Dissipation PC @TC=25? 100 W Tj Junction Temperature 200 ? Tstg Storage Temperature Range -65~200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.0 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2245 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL

5.56. 2sc2246.pdf Size:117K _inchange_semiconductor

2SC2287
2SC2287
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2246 DESCRIPTION Ў¤ With TO-3 package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Power switching Ў¤ Power amplification Ў¤ power driver PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg Collector-base voltage PARAMETER CONDITIONS Collector-emitter voltage INCH Base current Emitter-base voltage Collector current ANG SEM E Open base Tmb=25Ўж Open emitter OND IC TOR UC VALUE 450 400 5 15 30 6 100 200 -65~200 UNIT V V V A A A W Ўж Ўж Open collector Collector current-peak Total power dissipation Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 1.0 UNIT Ўж /W

5.57. 2sc2209.pdf Size:233K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2209 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·High Collector Power Dissipation ·Complement to Type 2SA963 APPLICATIONS ·Designed for low frequency power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak 3 A Collector Power Dissipation PC @ TC=25? 10 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2209 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 50 V V(BR)CEO Co

5.58. 2sc2243.pdf Size:232K _inchange_semiconductor

2SC2287
2SC2287
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2243 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IBB Base Current-Continuous 2 A Collector Power Dissipation PC @TC=25? 100 W Tj Junction Temperature 200 ? Tstg Storage Temperature Range -65~200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.0 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2243 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL

5.59. 2sc2216.pdf Size:234K _lge

2SC2287
2SC2287
2SC2216(NPN) TO-92 Bipolar Transistors 1. BASE TO-92 2. EMITTER 3. COLLECTOR Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 4 V Dimensions in inches and (millimeters) IC Collector Current -Continuous 50 mA PC Collector Dissipation 300 mW TJ Junction Temperature 125 ? Tstg Storage Temperature -55-125 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC= 10 mA , IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE= 100?A, IC=0 4 V Collector cut-off current ICBO VCB=50 V IE=0 0.1 ?A Emitter cut-off current IEBO VEB= 3 V, IC=0 0.1 ?A DC current gain hFE VCE=12.5V, IC=12.5 mA 40 140 Collector-emitte

5.60. 2sc2235_to-92l.pdf Size:226K _lge

2SC2287
2SC2287
2SC2235 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTER 3. BASE 4.700 5.100 2 3 1 Features 7.800 Complementary to 2SA965 B B 8.200 MAXIMUM RATINGS (TA=25? unless otherwise noted) 0.600 0.800 Symbol Parameter Value Units B 0.350 VCBOB Collector-Base Voltage 120 V B 0.550 13.800 VCEOB Collector-Emitter Voltage 120 V B 14.200 VEBOB Emitter-Base Voltage 5 V B ICB Collector Current -Continuous 0.8 A B 1.270 TYP PCB Collector Power Dissipation 0.9 W B 2.440 TJB Junction Temperature 150 ? 2.640 B B 0.000 Tstg Storage Temperature -55to+150 ? 1.600 0.300 Dimensions in inches and (millimeters) 0.350 0.450 ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) 3.700 4.100 1.280 Parameter Symbol MIN1.580 TYP MAX UNIT Test conditions 4.000 B B Collector-base breakdown voltage VB B IB =1mA,IB =0 120 V (BR)CBO C E B B Collector-emitter breakdown voltage VB B IB =10mA,IB =0 120 V (BR)CEO C B B B Emitter-Base

5.61. 2sc2236_to-92l.pdf Size:355K _lge

2SC2287
2SC2287
2SC2236 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 2 3 5.100 1 Features 7.800 8.200 Complementary to 2SA966 and 3 Watts output Applications. 0.600 0.800 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units 0.350 0.550 VCBO Collector-Base Voltage 30 V 13.800 14.200 VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A 1.270 TYP 2.440 PC Collector Power Dissipation 0.9 W 2.640 TJ Junction Temperature 150 ? 0.000 1.600 0.300 Dimensions in inches and (millimeters) Tstg Storage Temperature -55-150 ? 0.350 0.450 3.700 4.100 ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) 280 1. 1.580 4.000 Parameter Symbol Test conditions MIN TYP MAX UNIT V Collector-base breakdown voltage V(BR)CBO IC= 1mA , IE=0 30 Collector-emitter breakdown voltage V(BR)CEO IC= 10mA , IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=

5.62. 2sc2230-2sc2230a.pdf Size:242K _lge

2SC2287
2SC2287
2SC2230/2SC2230A TO-92MOD Transistor (NPN) 1. EMITTER TO-92MOD 1 2. COLLECTOR 2 3 3. BASE Features 5.800 6.200 High voltage: VCEO=180V(2SC2230A) 8.400 High DC Current Gain 8.800 0.900 1.100 0.400 0.600 13.800 14.200 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units 1.500 TYP 2.900 Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 200 V 3.100 0.000 1.600 VCEO Collector-Emitter Voltage 2SC2230 160 0.380 V 0.400 4.700 2SC2230A 180 0.500 5.100 VEBO Emitter-Base Voltage 5 V 1.730 IC Collector Current -Continuous 0.1 A 2.030 4.000 PC Collector Power Dissipation 0.8 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55 to +150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100ВµA , IE=0 200 V IC= 10 mA, IB=0 2SC2230 160 Collector-emitter breakdown voltage

5.63. 2sc2236_to-92mod.pdf Size:339K _lge

2SC2287
2SC2287
2SC2236 TO-92MOD Transistor (NPN) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE Features 5.800 6.200 Complementary to 2SA966 and 3 Watts output Applications. 8.400 8.800 MAXIMUM RATINGS (TA=25? unless otherwise noted) 0.900 1.100 0.400 Symbol Parameter Value Units 0.600 VCBO Collector-Base Voltage 30 V 13.800 14.200 VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V 1.500 TYP IC Collector Current -Continuous 1.5 A 2.900 Dimensions in inches and (millimeters) 3.100 PC Collector Power Dissipation 0.9 W 0.000 1.600 0.380 TJ Junction Temperature 150 ? 0.400 4.700 0.500 5.100 Tstg Storage Temperature -55-150 ? 1.730 2.030 4.000 ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT V Collector-base breakdown voltage V(BR)CBO IC= 1mA , IE=0 30 Collector-emitter breakdown voltage V(BR)CEO IC= 10mA , IB=0 30 V Emitter-base breakdown voltage V(BR)EBO

5.64. 2sc2235_to-92mod.pdf Size:223K _lge

2SC2287
2SC2287
2SC2235 TO-92MOD Transistor (NPN) TO-92MOD 1 1. EMITTER 2 2. COLLECTER 3 3. BASE Features Complementary to 2SA965 5.800 6.200 MAXIMUM RATINGS (TB B=25? unless otherwise noted) A 8.400 8.800 Symbol Parameter Value Units 0.900 1.100 VB B Collector-Base Voltage 120 V CBO 0.400 0.600 VB B Collector-Emitter Voltage 120 V CEO VB B Emitter-Base Voltage 5 V 13.800 EBO 14.200 IB B Collector Current -Continuous 0.8 A C PB B Collector Power Dissipation 0.9 W C 1.500 TYP TB B Junction Temperature 150 ? J 2.900 Dimensions in inches and (millimeters) 3.100 TB B Storage Temperature -55to+150 ? stg 0.000 1.600 0.380 0.400 4.700 0.500 5.100 ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) 1.730 MIN Parameter Symbol 2.030 TYP MAX UNIT Test conditions 4.000 B B Collector-base breakdown voltage VB B IB =1mA,IB =0 120 V (BR)CBO C E B B Collector-emitter breakdown voltage VB B IB =10mA,IB =0 120 V (BR)CEO C B B

5.65. 2sc2216m.pdf Size:1228K _blue-rocket-elect

2SC2287
2SC2287
2SC2216M(BR3DG2216M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 高增益,h 线性好。 FE High gain, good hFE linearity. 用途 / Applications 用于电视机末级图像中放。 TV final picture IF amplifier applications. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 3 2 1 PIN1:Emitter PIN 2:Base PIN 3:Collector 放大及印章代码 / hFE Classifications & Marking hFE Range 40~140 Marking H16 http://www.fsbrec.com 1 / 6 2SC2216M(BR3DG2216M) Rev.C Feb.-2015 DATA SHEET 极限参数 / Absolute Maximum Ratings(Ta=25℃) 参数 符号 数值 单位 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 50 V Collector to Emitter Voltage VCEO 45 V Emitter to Base Voltage VEBO 4.0 V Collector Current IC 50 mA Emitter Current IE -50 mA Collector Power Dissipation PC 200 mW Junction T

See also transistors datasheet: 2SC2280 , 2SC2281 , 2SC2282 , 2SC2283 , 2SC2284 , 2SC2284A , 2SC2285 , 2SC2286 , 2N2222A , 2SC2287M , 2SC2288 , 2SC2288M , 2SC2289 , 2SC2289M , 2SC229 , 2SC2290 , 2SC2291 .

Keywords

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