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2SC2287 Transistor (IC) Datasheet. Cross Reference Search. 2SC2287 Equivalent

Type Designator: 2SC2287

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 17

Maximum collector-base voltage |Ucb|, V: 38

Maximum collector-emitter voltage |Uce|, V: 18

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 1.5

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz: 175

Collector capacitance (Cc), pF: 17

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of 2SC2287 transistor: XM5

2SC2287 Transistor Equivalent Substitute - Cross-Reference Search

2SC2287 PDF:

5.1. 2sc2230.pdf Size:202K _toshiba

2SC2287
2SC2287

5.2. 2sc2216_2sc2717.pdf Size:267K _toshiba

2SC2287
2SC2287

2SC2216,2SC2717 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2216,2SC2717 TV Final Picture IF Amplifier Applications Unit: mm High gain: Gpe = 33dB (typ.) (f = 45 MHz) Good linearity of h . FE Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit 2SC2216 50 Collector-base voltage VCBO V 2SC2717 30 2SC2216 45 Collector-emitter VCEO V vol

5.3. 2sc2240.pdf Size:347K _toshiba

2SC2287
2SC2287

2SC2240 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2240 Low Noise Audio Amplifier Applications Unit: mm The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse noise. This is recommended for the first stages of Equalizer amplifier

5.4. 2sc2270.pdf Size:94K _toshiba

2SC2287
2SC2287

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.5. 2sc2235.pdf Size:174K _toshiba

2SC2287
2SC2287

5.6. 2sc2290.pdf Size:169K _toshiba

2SC2287
2SC2287

2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) Unit in mm Specified 12.5V, 28MHz Characteristics Output Power : Po = 60W (Min.) PEP Power Gain : Gp = 11.8dB (Min.) Collector Efficiency : ?C = 35% (Min.) Intermodulation Distortion: IMD = -30dB (Max.) MAXIMUM RATINGS (Tc =

5.7. 2sc2231.pdf Size:122K _toshiba

2SC2287
2SC2287

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.8. 2sc2242.pdf Size:112K _toshiba

2SC2287
2SC2287

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.9. 2sc2236.pdf Size:177K _toshiba

2SC2287
2SC2287

5.10. 2sc2229.pdf Size:211K _toshiba

2SC2287
2SC2287

5.11. 2sc2210.pdf Size:73K _sanyo

2SC2287
2SC2287

5.12. 2sc2223.pdf Size:222K _nec

2SC2287
2SC2287

5.13. 2sc2206_e.pdf Size:57K _panasonic

2SC2287
2SC2287

Transistor 2SC2206 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SA1254 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Optimum for RF amplification of FM/AM radios. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45

5.14. 2sc2295_e.pdf Size:51K _panasonic

2SC2287
2SC2287

Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SA1022 +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 Optimum for RF amplification of FM/AM radios. High transition frequency fT. 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3

5.15. 2sc2258.pdf Size:71K _panasonic

2SC2287
2SC2287

Power Transistors 2SC2258 Silicon NPN triple diffusion planar type For high breakdown voltage general amplification Unit: mm 8.0+0.5 0.1 3.20.2 ? 3.160.1 Features High collector-emitter voltage (Base open) VCEO High transition frequency fT TO-126B package which requires no insulation plate for installa- tion to the heat sink Absolute Maximum Ratings Ta = 25C Parameter

5.16. 2sc2295.pdf Size:51K _panasonic

2SC2287
2SC2287

Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SA1022 +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 Optimum for RF amplification of FM/AM radios. High transition frequency fT. 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3

5.17. 2sc2209.pdf Size:91K _panasonic

2SC2287
2SC2287

Power Transistors 2SC2209 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 7.5+0.5 0.1 2.90.2 Complementary to 2SA0963 120 Features Large collector power dissipation PC Output of 5 W can be obtained by a complementary pair with 2SA0963 Absolute Maximum Ratings Ta = 25C Parameter Symbol Rating Unit 0.750.1 Collector-base voltage (Emitter

5.18. 2sc2206.pdf Size:105K _panasonic

2SC2287
2SC2287

Transistors 2SC2206 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm Complementary to 2SA1254 2.50.1 6.90.1 (1.0) (1.5) (1.5) Features R 0.9 Optimum for RF amplification of FM/AM radios R 0.7 High transition frequency fT M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board (0.85)

5.19. 2sc2235.pdf Size:100K _utc

2SC2287
2SC2287

UNISONIC TECHNOLOGIES CO., LTD 2SC2235 NPN SILICON TRANSISTOR AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS 1 TO-92 ? FEATURES * Complimentary to UTC 2SA965 1 TO-92NL ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC2235L-x-T92-B 2SC2235G-x-T92-B TO-92 E C B Tape Box 2SC2235L-x-T92-K 2SC2235G-

5.20. 2sc2278.pdf Size:38K _hitachi

2SC2287
2SC2287

5.21. 2sc2298.pdf Size:348K _hitachi

2SC2287
2SC2287

5.22. 2sc2267.pdf Size:39K _hitachi

2SC2287
2SC2287

5.23. 2sc2237.pdf Size:131K _mitsubishi

2SC2287
2SC2287

5.24. 2sc2233.pdf Size:120K _mospec

2SC2287
2SC2287

A A A

5.25. 2sc2277.pdf Size:32K _no

2SC2287
2SC2287

5.26. 2sc2238.pdf Size:138K _no

2SC2287
2SC2287

5.27. 2sc2221.pdf Size:426K _no

2SC2287
2SC2287

5.28. 2sc2275.pdf Size:88K _no

2SC2287
2SC2287

5.29. 2sc2216.pdf Size:251K _secos

2SC2287
2SC2287

2SC2216 0.05 A , 50 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? Amplifier dissipation NPN Silicon G H ?Base ?Emitter ?Collector J A D Millimeter REF. Min. Max. B A 4.40 4.70 B 4.30 4.70 K C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 E C F G 1.27 TY

5.30. 2sc2274.pdf Size:78K _secos

2SC2287
2SC2287

2SC2274 0.5 A , 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 ? High Breakdown Voltage G H ? High Current ? Low Saturation Voltage ?Emitter J ?Collector ?Base A D B CLASSIFICATION OF hFE(1) Millimeter REF. Min. Max. K Product-Rank 2SC2274-D 2SC2274-E 2SC2

5.31. 2sc2235tm.pdf Size:306K _secos

2SC2287
2SC2287

2SC2235TM 0.8A , 120V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92MOD FEATURES ? Complementary to 2SA965 A D B CLASSIFICATION OF hFE Product-Rank 2SC2235TM-O 2SC2235TM-Y K E F Range 80-160 120-240 C N G H ?Emitter ? Collector ? Base M J L Collector ?? Millimeter Mil

5.32. 2sc2258a.pdf Size:146K _jmnic

2SC2287
2SC2287

JMnic Product Specification Silicon NPN Power Transistors 2SC2258A DESCRIPTION · ·With TO-126 package ·High transition frequency fT ·High collector-emitter voltage VCEO APPLICATIONS ·High voltage general amplifier ·TV video output amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PA

5.33. 2sc2238a.pdf Size:158K _jmnic

2SC2287
2SC2287

JMnic Product Specification Silicon NPN Power Transistors 2SC2238 2SC2238A 2SC2238B DESCRIPTION ·With TO-220 package ·Complement to type 2SA968 ·High breakdown votage APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYM

5.34. 2sc2258.pdf Size:166K _jmnic

2SC2287
2SC2287

JMnic Product Specification Silicon NPN Power Transistors 2SC2258 DESCRIPTION · ·With TO-126 package ·High transition frequency fT ·High collector-emitter voltage VCEO APPLICATIONS ·For high breakdown voltage general amplification ·For video output amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum rat

5.35. 2sc2246.pdf Size:121K _jmnic

2SC2287
2SC2287

Product Specification www.jmnic.com Silicon Power Transistors 2SC2246 DESCRIPTION ·High voltage ,high speed ·With TO-3 package APPLICATIONS ·Power switching ·Power amplification ·power driver PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS MAX U

5.36. 2sc2275.pdf Size:156K _jmnic

2SC2287
2SC2287

JMnic Product Specification Silicon NPN Power Transistors 2SC2275 2SC2275A DESCRIPTION ·With TO-220 package ·Complement to type 2SA985/985A ·High breakdown voltage APPLICATIONS ·For low frequency and high frequency power amplifer applicatons PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL P

5.37. 2sc2262.pdf Size:217K _inchange_semiconductor

2SC2287
2SC2287

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2262 DESCRIPTION ·High Power Dissipation- : PC= 80W(Max.)@TC=25? ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) ·Complement to Type 2SA982 APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-B

5.38. 2sc2239.pdf Size:318K _inchange_semiconductor

2SC2287
2SC2287

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2239 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO=160V(Min) ·Good Linearity of hFE APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-

5.39. 2sc2266.pdf Size:129K _inchange_semiconductor

2SC2287
2SC2287

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2266 DESCRIPTION ·With TO-3 package ·High dielectric strength ·Short switching time APPLICATIONS ·For switching regulator application PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector MAXIMUN RATINGS SYMBOL PARAMETER CONDITIONS VALUE

5.40. 2sc2244.pdf Size:200K _inchange_semiconductor

2SC2287
2SC2287

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2244 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emit

5.41. 2sc2270.pdf Size:122K _inchange_semiconductor

2SC2287
2SC2287

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2270 DESCRIPTION · ·With TO-126 package ·Low collector saturation voltage ·High collector power dissipation APPLICATIONS ·Strobo flash applications ·Medimum power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum rati

5.42. 2sc2260.pdf Size:217K _inchange_semiconductor

2SC2287
2SC2287

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2260 DESCRIPTION ·High Power Dissipation- : PC= 80W(Max.)@TC=25? ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·Complement to Type 2SA980 APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-B

5.43. 2sc2293.pdf Size:203K _inchange_semiconductor

2SC2287
2SC2287

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2293 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emit

5.44. 2sc2261.pdf Size:217K _inchange_semiconductor

2SC2287
2SC2287

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2261 DESCRIPTION ·High Power Dissipation- : PC= 80W(Max.)@TC=25? ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min.) ·Complement to Type 2SA981 APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-B

5.45. 2sc2258a.pdf Size:116K _inchange_semiconductor

2SC2287
2SC2287

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2258A DESCRIPTION Ў¤ With TO-126 package Ў¤ High transition frequency fT Ў¤ High collector-emitter voltage VCEO APPLICATIONS Ў¤ High voltage general amplifier Ў¤ TV video output amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute maximum rat

5.46. 2sc2292.pdf Size:202K _inchange_semiconductor

2SC2287
2SC2287

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2292 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emit

5.47. 2sc2238.pdf Size:237K _inchange_semiconductor

2SC2287
2SC2287

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2238 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO=160V(Min) ·Good Linearity of hFE ·Complement to Type 2SA968 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base V

5.48. 2sc2248.pdf Size:261K _inchange_semiconductor

2SC2287
2SC2287

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2248 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emit

5.49. 2sc2238_2sc2238a_2sc2238b.pdf Size:125K _inchange_semiconductor

2SC2287
2SC2287

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2238 2SC2238A 2SC2238B DESCRIPTION Ў¤ With TO-220 package Ў¤ Complement to type 2SA968 Ў¤ High breakdown votage APPLICATIONS Ў¤ Power amplifier applications Ў¤ Driver stage amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum rat

5.50. 2sc2233.pdf Size:229K _inchange_semiconductor

2SC2287
2SC2287

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2233 DESCRIPTION ·Collector-Emitter Breakdown Voltage- :VCEO= 60V(Min) ·DC Current Gain- : hFE= 30(Min)@ (VCE= 5V, IC= 1A) ·High Collector Current ·High Collector Power Dissipation APPLICATIONS ·TV Horizontal Deflection Output Application ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAME

5.51. 2sc2258.pdf Size:135K _inchange_semiconductor

2SC2287
2SC2287

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2258 DESCRIPTION Ў¤ With TO-126 package Ў¤ High transition frequency fT Ў¤ High collector-emitter voltage VCEO APPLICATIONS Ў¤ For high breakdown voltage general amplification Ў¤ For video output amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤

5.52. 2sc2275_2sc2275a.pdf Size:125K _inchange_semiconductor

2SC2287
2SC2287

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2275 2SC2275A DESCRIPTION Ў¤ With TO-220 package Ў¤ Complement to type 2SA985/985A Ў¤ High breakdown voltage APPLICATIONS Ў¤ For low frequency and high frequency power amplifer applicatons PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=2

5.53. 2sc2242.pdf Size:257K _inchange_semiconductor

2SC2287
2SC2287

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2242 DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 300V(Min) ·High Current-Gain—Bandwidth Product- : fT= 20MHz(Min)@IC= 20mA APPLICATIONS ·Power amplifier applications ·Color TV sound output applications ·Recommended for sound output stage in line operated TV ABSOLUTE MAXIMUM RATI

5.54. 2sc2247.pdf Size:261K _inchange_semiconductor

2SC2287
2SC2287

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2247 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emit

5.55. 2sc2245.pdf Size:232K _inchange_semiconductor

2SC2287
2SC2287

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2245 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emit

5.56. 2sc2246.pdf Size:117K _inchange_semiconductor

2SC2287
2SC2287

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2246 DESCRIPTION Ў¤ With TO-3 package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Power switching Ў¤ Power amplification Ў¤ power driver PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO V

5.57. 2sc2209.pdf Size:233K _inchange_semiconductor

2SC2287
2SC2287

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2209 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·High Collector Power Dissipation ·Complement to Type 2SA963 APPLICATIONS ·Designed for low frequency power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 5

5.58. 2sc2243.pdf Size:232K _inchange_semiconductor

2SC2287
2SC2287

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2243 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emit

5.59. 2sc2216.pdf Size:234K _lge

2SC2287
2SC2287

2SC2216(NPN) TO-92 Bipolar Transistors 1. BASE TO-92 2. EMITTER 3. COLLECTOR Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 4 V Dimensions in inches and (millimeters) IC Collector Current -Continuous 50

5.60. 2sc2235_to-92l.pdf Size:226K _lge

2SC2287
2SC2287

2SC2235 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTER 3. BASE 4.700 5.100 2 3 1 Features 7.800 Complementary to 2SA965 B B 8.200 MAXIMUM RATINGS (TA=25? unless otherwise noted) 0.600 0.800 Symbol Parameter Value Units B 0.350 VCBOB Collector-Base Voltage 120 V B 0.550 13.800 VCEOB Collector-Emitter Voltage 120 V B 14.200 VEBOB Emitter-Base Voltage 5

5.61. 2sc2236_to-92l.pdf Size:355K _lge

2SC2287
2SC2287

2SC2236 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 2 3 5.100 1 Features 7.800 8.200 Complementary to 2SA966 and 3 Watts output Applications. 0.600 0.800 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units 0.350 0.550 VCBO Collector-Base Voltage 30 V 13.800 14.200 VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Ba

5.62. 2sc2230-2sc2230a.pdf Size:242K _lge

2SC2287
2SC2287

2SC2230/2SC2230A TO-92MOD Transistor (NPN) 1. EMITTER TO-92MOD 1 2. COLLECTOR 2 3 3. BASE Features 5.800 6.200 High voltage: VCEO=180V(2SC2230A) 8.400 High DC Current Gain 8.800 0.900 1.100 0.400 0.600 13.800 14.200 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units 1.500 TYP 2.900 Dimensions in inches and (millimeters) VCBO Colle

5.63. 2sc2236_to-92mod.pdf Size:339K _lge

2SC2287
2SC2287

2SC2236 TO-92MOD Transistor (NPN) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE Features 5.800 6.200 Complementary to 2SA966 and 3 Watts output Applications. 8.400 8.800 MAXIMUM RATINGS (TA=25? unless otherwise noted) 0.900 1.100 0.400 Symbol Parameter Value Units 0.600 VCBO Collector-Base Voltage 30 V 13.800 14.200 VCEO Collector-Emitter Voltage 30 V VEBO

5.64. 2sc2235_to-92mod.pdf Size:223K _lge

2SC2287
2SC2287

2SC2235 TO-92MOD Transistor (NPN) TO-92MOD 1 1. EMITTER 2 2. COLLECTER 3 3. BASE Features Complementary to 2SA965 5.800 6.200 MAXIMUM RATINGS (TB B=25? unless otherwise noted) A 8.400 8.800 Symbol Parameter Value Units 0.900 1.100 VB B Collector-Base Voltage 120 V CBO 0.400 0.600 VB B Collector-Emitter Voltage 120 V CEO VB B Emitter-Base Voltage 5 V 13.800

5.65. 2sc2216m.pdf Size:1228K _blue-rocket-elect

2SC2287
2SC2287

2SC2216M(BR3DG2216M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 高增益,h 线性好。 FE High gain, good hFE linearity. 用途 / Applications 用于电视机末级图像中放。 TV final picture IF amplifier applications. 内部等效电路 / Equival

5.66. 2sc2223.pdf Size:882K _kexin

2SC2287
2SC2287

SMD Type Transistors NPN Transistors 2SC2223 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=20mA 1 2 ● Collector Emitter Voltage VCEO=20V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle

5.67. 2sc2295.pdf Size:1104K _kexin

2SC2287
2SC2287

SMD Type Transistors NPN Transistors 2SC2295 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● High transition frequency fT. ● Complementary to 2SA1022 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Volt

See also transistors datasheet: 2SC2280 , 2SC2281 , 2SC2282 , 2SC2283 , 2SC2284 , 2SC2284A , 2SC2285 , 2SC2286 , 2N2222A , 2SC2287M , 2SC2288 , 2SC2288M , 2SC2289 , 2SC2289M , 2SC229 , 2SC2290 , 2SC2291 .

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 2SC2287 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


2SC2287
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