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2SC2510
  2SC2510
  2SC2510
  2SC2510
 
2SC2510
  2SC2510
  2SC2510
  2SC2510
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586G
2SA1586O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229O .. 2SC2434
2SC2435 .. 2SC2668Y
2SC2669 .. 2SC2859O
2SC2859Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC400M
2SC400O .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC507R
2SC507Y .. 2SC536SP
2SC537 .. 2SC5813
2SC5819 .. 2SC690
2SC690M .. 2SC89H
2SC90 .. 2SD1063S
2SD1064 .. 2SD1252
2SD1252A .. 2SD1442
2SD1442A .. 2SD1662
2SD1663 .. 2SD1848
2SD1849 .. 2SD2095
2SD2096 .. 2SD2439O
2SD2439P .. 2SD362R
2SD363 .. 2SD588A
2SD589 .. 2SD786
2SD787 .. 2STA2510
2STC2510 .. 40221
40222 .. 40630
40631 .. A177
A178 .. AC556K
AC558 .. AF129
AF130 .. ASY70
ASY70IV .. BC149B
BC149C .. BC237B-92
BC237BP .. BC337-25
BC337-40 .. BC477QF
BC477VI .. BC807-25
BC807-25L .. BC858CLT1
BC858CR .. BCV63
BCV63B .. BCW94K
BCW94KA .. BCY65EPA
BCY65EPB .. BD226-16
BD226-6 .. BD370B-16
BD370B-25 .. BD590
BD591 .. BD940F
BD941 .. BDV93
BDV94 .. BDX85A
BDX85B .. BF225JF
BF226 .. BF422
BF422A .. BF847
BF848 .. BFQ268
BFQ27 .. BFS33P
BFS34 .. BFV88
BFV88A .. BFY69V
BFY69W .. BLX88
BLX89 .. BSS72
BSS72S .. BSX46-6
BSX47 .. BTB1580L3
BTB1580M3 .. BU1508AX
BU1508DX .. BUD48A
BUD48AI .. BUS12B
BUS13 .. BUW46
BUW48 .. BUY64
BUY65 .. CD5918
CD5919 .. CI3397
CI3402 .. CL066P
CL100 .. CPH5517
CPH5518 .. CSA733
CSA733K .. CSC2274D
CSC2274E .. CT764
CT765 .. D29A4
D29A5 .. D41E2
D41E3 .. D62T6560
D62T7030 .. DT1311
DT1312 .. DTB143EC
DTB143EK .. DTL1654
DTL1655 .. ECG228A
ECG229 .. ED1401C
ED1401D .. ESM738T
ESM749 .. FE1718D
FE1718E .. FMA7A
FMA8A .. FN1F4N
FN1F4Z .. FXT3906SM
FXT449 .. GD362
GD363 .. GES929
GES93 .. GS9018
GS9018D .. GT402B
GT402D .. HEPS0015
HEPS0016 .. HSB649A
HSB649T .. IMBT3904
IMBT3905 .. JE9143A
JE9143B .. KRA111M
KRA111S .. KRC104
KRC104M .. KRC853F
KRC853U .. KSB1366
KSB1366G .. KSC3125
KSC3158 .. KSD569O
KSD569R .. KT203A
KT203AM .. KT336G
KT336V .. KT630G
KT630V .. KT815B9
KT815G .. KT9115A
KT9116A .. KTC1020
KTC1026 .. KTN2369
KTN2369A .. MCH4017
MCH4020 .. MJ11017
MJ11018 .. MJD50TF
MJD5731 .. MJE701T
MJE702 .. MMBC1623L3
MMBC1623L4 .. MMBT8599
MMBT9012 .. MP1530
MP1530A .. MP5142
MP5143 .. MPS3405
MPS3414 .. MPSL01
MPSL01A .. MSB1218ART1
MSB709 .. NA12HY
NA21E .. NB014EY
NB014EZ .. NB212Z
NB212ZG .. NKT142
NKT143 .. NPS5816
NPS5855 .. NTE2332
NTE2334 .. OC82DM
OC83 .. PBSS5350SS
PBSS5350T .. PMBT3905
PMBT3906 .. PT3151A
PT3501 .. RCA1B04
RCA1B05 .. RN1703
RN1703JE .. RN2902FE
RN2902FS .. S1807
S1808 .. SDT9308
SDT9309 .. SK1641
SK2604A .. SRA2219UF
SRC1201 .. STC5649
STC5650 .. SZD5564
SZD5706 .. TA2606
TA2616 .. TIP146T
TIP147 .. TIS51
TIS52 .. TN4140
TN4141 .. TPC6504
TPC6601 .. UN1115Q
UN1115R .. UN921K
UN921L .. ZT60
ZT600 .. ZTX451
ZTX452 .. ZXTP749F
ZXTPS717MC .. ZXTPS720MC
 
2SC2510 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SC2510 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC2510

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 250

Maximum collector-base voltage |Ucb|, V: 55

Maximum collector-emitter voltage |Uce|, V: 35

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 20

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF: 450

Forward current transfer ratio (hFE), min: 10

Noise Figure, dB: -

Package of 2SC2510 transistor: MD34

2SC2510 Equivalent Transistors - Cross-Reference Search

2SC2510 PDF doc:

1.1. 2sc2510.pdf Size:165K _toshiba

2SC2510
2SC2510
2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) Unit in mm Specified 28V, 28MHz Characteristics Output Power : Po = 150W (Min.) PEP Power Gain : Gp = 12.2dB (Min.) Collector Efficiency : ?C = 35% (Min.) Intermodulation Distortion: IMD = -30dB (Max.) MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCES 60 V Collector-Emitter Voltage VCEO 35 V Emitter-Base Voltage VEBO 4 V Collector Current IC 20 A JEDEC Collector Power Dissipation PC 250 W EIAJ Junction Temperature Tj 175 C TOSHIBA 2-13B1A Storage Temperature Range Tstg -65~175 C Weight: 5.2g 000707EAA1 TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulner

4.1. 2sc2517.pdf Size:132K _nec

2SC2510
2SC2510
DATA SHEET SILICON POWER TRANSISTOR 2SC2517 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC2517 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm) speed switching. This transistor is ideal for use in drivers such as switching regulators, DC/DC converters, high-frequency power amplifiers. FEATURES ow collector saturation voltage: VCE(sat) 0.6 V (at IC = 3.0 A) ? Fast switching speed: tf 0.5 s (at IC = 3.0 A) ? Wide base reverse-bias SOA: VCEX(SUS) 150 V (at IC = 3.0 A) ? ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Electrode Connection 1. Base (B) Parameter Symbol Ratings Unit 2. Collector (C) 3. Emitter (E) Collector to base voltage VCBO 150 V 4. Fin (collector) Collector to emitter voltage VCEO 100 V EIA : SC-46 Emitter to base voltage VEBO 12 V EDEC: TO-220AB IEC: - Collector current (DC) IC(DC) 5.0 A Collector current (pulse) IC(pulse)*10 A Base current (DC) IB(DC) 2.5 A Total

4.2. 2sc2518.pdf Size:170K _nec

2SC2510
2SC2510

4.3. 2sc2512.pdf Size:33K _hitachi

2SC2510
2SC2510
2SC2512 Silicon NPN Triple Diffused Application VHF Amplifier VHF TV Tuner, Mixer Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 2SC2512 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 300 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 30 V IC = 10 A, IE = 0 voltage Collector to emitter breakdown V(BR)CEO 20 V IC = 1 mA, RBE = ? voltage Emitter to base breakdown V(BR)EBO 3 V IE = 10 A, IC = 0 voltage Collector cutoff current ICBO 0.5 A VCB = 10 V, IE = 0 Collector to emitter saturation VCE(sat) 1 V IC = 20 mA, IB = 4 mA voltage DC current transfer ratio hFE 30 VCE = 10 V, IC = 10 mA Re

4.4. 2sc2517.pdf Size:99K _savantic

2SC2510
2SC2510
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2517 DESCRIPTION With TO-220C package Low collector saturation voltage Wide area of safe operation APPLICATIONS Switching regulators DC-DC converters High frequency power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V Collector-base voltage Open emitter 150 V CBO V Collector-emitter voltage Open base 100 V CEO V Emitter-base voltage Open collector 12 V EBO I Collector current 5 A C ICM Collector current-peak 10 A I Base current 2.5 A B T =25? 1.5 a P Total power dissipation W T T =25? 30 C T Junction temperature 150 ? j T Storage temperature -55~150 ? stg SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2517 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MI

4.5. 2sc2516.pdf Size:126K _inchange_semiconductor

2SC2510
2SC2510
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2516 DESCRIPTION Ў¤ With TO-220C package Ў¤ Low collector saturation voltage Ў¤ Wide area of safe operation APPLICATIONS Ў¤ Switching regulators Ў¤ DC-DC converters Ў¤ High frequency power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER INC Collector-base voltage Collector-emitter voltage ANG H E SEM Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE 150 60 12 5 10 2.5 UNIT V V V A A A Emitter-base voltage Collector current Collector current-peak Base current Ta=25Ўж PT Total power dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature 1.5 W 30 150 -55~150 Ўж Ўж

4.6. 2sc2517.pdf Size:126K _inchange_semiconductor

2SC2510
2SC2510
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2517 DESCRIPTION Ў¤ With TO-220C package Ў¤ Low collector saturation voltage Ў¤ Wide area of safe operation APPLICATIONS Ў¤ Switching regulators Ў¤ DC-DC converters Ў¤ High frequency power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER INC Collector-base voltage Collector-emitter voltage ANG H E SEM Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE 150 100 12 5 10 2.5 UNIT V V V A A A Emitter-base voltage Collector current Collector current-peak Base current Ta=25Ўж PT Total power dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature 1.5 W 30 150 -55~150 Ўж Ўж

4.7. 2sc2518.pdf Size:280K _inchange_semiconductor

2SC2510
2SC2510
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2518 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·Low Collector Saturation Voltage ·High Speed Switching APPLICATIONS ·Designed for switching regulator, DC-DC converter and ultrasonic applicance applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IBB Base Current-Continuous 2.5 A Total Power Dissipation PC @ TC=25? 40 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2518 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

See also transistors datasheet: 2SC2503 , 2SC2504 , 2SC2505 , 2SC2506 , 2SC2507 , 2SC2508 , 2SC2509 , 2SC251 , BC337 , 2SC2511 , 2SC2512 , 2SC2516 , 2SC2516A , 2SC2517 , 2SC2517O , 2SC2517R , 2SC2517Y .

Keywords

 2SC2510 Datasheet  2SC2510 Datenblatt  2SC2510 RoHS  2SC2510 Distributor
 2SC2510 Application Notes  2SC2510 Component  2SC2510 Circuit  2SC2510 Schematic
 2SC2510 Equivalent  2SC2510 Cross Reference  2SC2510 Data Sheet  2SC2510 Fiche Technique

 

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