All Transistors Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
2SC2510
  2SC2510
  2SC2510
 
2SC2510
  2SC2510
  2SC2510
 
2SC2510
  2SC2510
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU214
BU215 .. BUF410AI
BUF410FI .. BUS22BF
BUS22C .. BUW81A
BUW84 .. BUY83
BUY84 .. CD9013J
CD9014 .. CIL157
CIL157A .. CL166A
CL166B .. CPS2540B
CPS2545B .. CSA968
CSA968A .. CSC2688BPL
CSC2688G .. CTP1108
CTP1109 .. D29J6
D29J7 .. D42CU5
D42CU6 .. D64VP4
D64VP5 .. DT400-300
DT400-400 .. DTC015EM
DTC015EUB .. DTL3501
DTL3502 .. ECG2332
ECG2334 .. ED1602C
ED1602D .. ET206
ET359 .. FE4021
FE4022 .. FMG12
FMG13 .. FPC644
FPC828 .. FXT555SM
FXT557 .. GE55821
GE56551 .. GET3
GET3013 .. GSDS50018
GSDS50020 .. GT43
GT44 .. HEPS3035
HEPS3047 .. HSE131
HSE133 .. IMX2
IMX3 .. K2107
K2107A .. KRA161F
KRA163F .. KRC117
KRC117M .. KRC868E
KRC868U .. KSB772-R
KSB772-Y .. KSC5020-R
KSC5020-Y .. KSE13004
KSE13005 .. KT210B
KT210V .. KT347B
KT347V .. KT644G
KT644V .. KT817G9
KT817V .. KT916B
KT918A .. KTC3103A1
KTC3103B1 .. KTX311T
KTX312T .. MD1131F
MD1132 .. MJ14002
MJ14003 .. MJE13003HT
MJE13003HV .. MJF18008
MJF2955 .. MMBT1015
MMBT123S .. MMBTA56L
MMBTA56LT1 .. MP1550A
MP1551 .. MP800
MP801 .. MPS3866
MPS3900 .. MPSW55
MPSW56 .. MT3002
MT3011 .. NA21ZX
NA21ZY .. NB021FZ
NB021H .. NB213YY
NB213Z .. NKT242L
NKT243 .. NR431DF
NR431DG .. NTE2542
NTE2543 .. P217A
P217B .. PDTA114YT
PDTA114YU .. PMD1702K
PMD1703K .. PTB20030
PTB20031 .. RCA8767
RCA9113 .. RN1909
RN1909AFS .. RN2963
RN2963CT .. S637T
S662T .. SE8541
SE8542 .. SM3180
SM3181 .. SRC1207E
SRC1207EF .. STD882D
STD888 .. T1381
T1382 .. TBF872
TC200 .. TIP33BF
TIP33C .. TIX803
TIX804 .. TN5415A
TN5447 .. TR8031
TR8040 .. UN2112
UN2113 .. UPT313
UPT314 .. ZTX108AK
ZTX108AL .. ZTX556
ZTX557 .. ZXTPS720MC
 
2SC2510 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SC2510 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC2510

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 250

Maximum collector-base voltage |Ucb|, V: 55

Maximum collector-emitter voltage |Uce|, V: 35

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 20

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF: 450

Forward current transfer ratio (hFE), min: 10

Noise Figure, dB: -

Package of 2SC2510 transistor: MD34

2SC2510 Equivalent Transistors - Cross-Reference Search

2SC2510 PDF doc:

1.1. 2sc2510.pdf Size:165K _toshiba

2SC2510
2SC2510
2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) Unit in mm Specified 28V, 28MHz Characteristics Output Power : Po = 150W (Min.) PEP Power Gain : Gp = 12.2dB (Min.) Collector Efficiency : ?C = 35% (Min.) Intermodulation Distortion: IMD = -30dB (Max.) MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCES 60 V Collector-Emitter Voltage VCEO 35 V Emitter-Base Voltage VEBO 4 V Collector Current IC 20 A JEDEC Collector Power Dissipation PC 250 W EIAJ Junction Temperature Tj 175 C TOSHIBA 2-13B1A Storage Temperature Range Tstg -65~175 C Weight: 5.2g 000707EAA1 TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulner

4.1. 2sc2517.pdf Size:132K _nec

2SC2510
2SC2510
DATA SHEET SILICON POWER TRANSISTOR 2SC2517 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC2517 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm) speed switching. This transistor is ideal for use in drivers such as switching regulators, DC/DC converters, high-frequency power amplifiers. FEATURES ow collector saturation voltage: VCE(sat) 0.6 V (at IC = 3.0 A) ? Fast switching speed: tf 0.5 s (at IC = 3.0 A) ? Wide base reverse-bias SOA: VCEX(SUS) 150 V (at IC = 3.0 A) ? ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Electrode Connection 1. Base (B) Parameter Symbol Ratings Unit 2. Collector (C) 3. Emitter (E) Collector to base voltage VCBO 150 V 4. Fin (collector) Collector to emitter voltage VCEO 100 V EIA : SC-46 Emitter to base voltage VEBO 12 V EDEC: TO-220AB IEC: - Collector current (DC) IC(DC) 5.0 A Collector current (pulse) IC(pulse)*10 A Base current (DC) IB(DC) 2.5 A Total

4.2. 2sc2518.pdf Size:170K _nec

2SC2510
2SC2510

4.3. 2sc2512.pdf Size:33K _hitachi

2SC2510
2SC2510
2SC2512 Silicon NPN Triple Diffused Application VHF Amplifier VHF TV Tuner, Mixer Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 2SC2512 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 300 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 30 V IC = 10 A, IE = 0 voltage Collector to emitter breakdown V(BR)CEO 20 V IC = 1 mA, RBE = ? voltage Emitter to base breakdown V(BR)EBO 3 V IE = 10 A, IC = 0 voltage Collector cutoff current ICBO 0.5 A VCB = 10 V, IE = 0 Collector to emitter saturation VCE(sat) 1 V IC = 20 mA, IB = 4 mA voltage DC current transfer ratio hFE 30 VCE = 10 V, IC = 10 mA Re

4.4. 2sc2517.pdf Size:99K _savantic

2SC2510
2SC2510
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2517 DESCRIPTION With TO-220C package Low collector saturation voltage Wide area of safe operation APPLICATIONS Switching regulators DC-DC converters High frequency power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V Collector-base voltage Open emitter 150 V CBO V Collector-emitter voltage Open base 100 V CEO V Emitter-base voltage Open collector 12 V EBO I Collector current 5 A C ICM Collector current-peak 10 A I Base current 2.5 A B T =25? 1.5 a P Total power dissipation W T T =25? 30 C T Junction temperature 150 ? j T Storage temperature -55~150 ? stg SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2517 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MI

4.5. 2sc2516.pdf Size:126K _inchange_semiconductor

2SC2510
2SC2510
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2516 DESCRIPTION Ў¤ With TO-220C package Ў¤ Low collector saturation voltage Ў¤ Wide area of safe operation APPLICATIONS Ў¤ Switching regulators Ў¤ DC-DC converters Ў¤ High frequency power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER INC Collector-base voltage Collector-emitter voltage ANG H E SEM Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE 150 60 12 5 10 2.5 UNIT V V V A A A Emitter-base voltage Collector current Collector current-peak Base current Ta=25Ўж PT Total power dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature 1.5 W 30 150 -55~150 Ўж Ўж

4.6. 2sc2517.pdf Size:126K _inchange_semiconductor

2SC2510
2SC2510
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2517 DESCRIPTION Ў¤ With TO-220C package Ў¤ Low collector saturation voltage Ў¤ Wide area of safe operation APPLICATIONS Ў¤ Switching regulators Ў¤ DC-DC converters Ў¤ High frequency power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER INC Collector-base voltage Collector-emitter voltage ANG H E SEM Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE 150 100 12 5 10 2.5 UNIT V V V A A A Emitter-base voltage Collector current Collector current-peak Base current Ta=25Ўж PT Total power dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature 1.5 W 30 150 -55~150 Ўж Ўж

4.7. 2sc2518.pdf Size:280K _inchange_semiconductor

2SC2510
2SC2510
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2518 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·Low Collector Saturation Voltage ·High Speed Switching APPLICATIONS ·Designed for switching regulator, DC-DC converter and ultrasonic applicance applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IBB Base Current-Continuous 2.5 A Total Power Dissipation PC @ TC=25? 40 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2518 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

See also transistors datasheet: 2SC2503 , 2SC2504 , 2SC2505 , 2SC2506 , 2SC2507 , 2SC2508 , 2SC2509 , 2SC251 , BC337 , 2SC2511 , 2SC2512 , 2SC2516 , 2SC2516A , 2SC2517 , 2SC2517-O , 2SC2517-R , 2SC2517-Y .

Keywords

 2SC2510 Datasheet  2SC2510 Datenblatt  2SC2510 RoHS  2SC2510 Distributor
 2SC2510 Application Notes  2SC2510 Component  2SC2510 Circuit  2SC2510 Schematic
 2SC2510 Equivalent  2SC2510 Cross Reference  2SC2510 Data Sheet  2SC2510 Fiche Technique

(C) 2005 All Right reserved Bipolar | | MOSFET | | IGBT | | Manufacturer Sites | | SMD Code | | Packages | | Contact alltransistors[@]gmail.com