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2SC2652
  2SC2652
  2SC2652
 
2SC2652
  2SC2652
  2SC2652
 
2SC2652
  2SC2652
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU526A/6
BU526A/7 .. BUL742C
BUL74A .. BUV47
BUV47A .. BUX83/9
BUX84 .. C945
C945LT1 .. CENW45
CF103 .. CJD47
CJD50 .. CMPTA63
CMPTA64 .. CS9018
CS9018D .. CSC1047
CSC1047B .. CSD1638
CSD1733 .. D11C1051
D11C1053 .. D39J6
D39J7 .. D45C4
D45C5 .. DMB2227A
DMJT9435 .. DTA123JUB
DTA123Y .. DTC143ZE
DTC143ZEA .. DZTA42
DZTA92 .. ECG361
ECG362 .. ESM138
ESM139 .. FC106
FC107 .. FJV4108R
FJV4109R .. FMMT5131
FMMT5132 .. FT4024
FT4025 .. GC181A
GC189 .. GES4926
GES4927 .. GI3638A
GI3641 .. GT3110A-2
GT311A .. HA7633
HA7723 .. HN2A26FS
HN2C01FE .. IDA1146
IDA1263 .. JE5401A
JE5401B .. KGS1002
KGS1003 .. KRA733F
KRA733U .. KRC668U
KRC669E .. KSA709-G
KSA709-O .. KSC2690A
KSC2690A-O .. KSD261-O
KSD261-R .. KSR2112
KSR2113 .. KT315N
KT315N-1 .. KT6111V
KT6112A .. KT8130A
KT8130B .. KT855V
KT856A .. KTA1807L
KTA1834D .. KTC9013
KTC9013S .. MA4103
MA4104 .. MH8211
MH8212 .. MJB44H11
MJB45H11 .. MJE4342
MJE4343 .. MM4209
MM4209A .. MMBT4965
MMBT5087L .. MMUN2215
MMUN2215L .. MP4052
MP4053 .. MPQ5858
MPQ5910 .. MPS929
MPS929A .. MRF455
MRF458 .. NA01F
NA01FG .. NB011HJ
NB011HK .. NB211EG
NB211EH .. NESG2021M16
NESG2030M04 .. NPS3903R
NPS3904 .. NSS60200LT1G
NSS60201LT1G .. OC480
OC480K .. PBSS4021PT
PBSS4032ND .. PEMD18
PEMD19 .. PN4403
PN4888 .. Q-00269A
Q-00369C .. RN1317
RN1318 .. RN2411
RN2412 .. RT657M
RT679M .. SD409
SD410 .. SGS911
SGS912 .. SRA2203S
SRA2203SF .. STB13007DT4
STB205L .. SUT465N
SUT466N .. TA1763
TA1763A .. TI814
TI815 .. TIPL757
TIPL757A .. TN3444
TN3467 .. TP4889
TP4890 .. UMH13N
UMH15N .. UN6218
UN6219 .. ZT1702
ZT1708 .. ZTX3701L
ZTX3701M .. ZXTN649F
ZXTNS618MC .. ZXTPS720MC
 
2SC2652 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SC2652 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC2652

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 300

Maximum collector-base voltage |Ucb|, V: 85

Maximum collector-emitter voltage |Uce|, V: 55

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 20

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz: 28

Collector capacitance (Cc), pF: 300

Forward current transfer ratio (hFE), min: 10

Noise Figure, dB: -

Package of 2SC2652 transistor: MD34

2SC2652 Equivalent Transistors - Cross-Reference Search

2SC2652 PDF doc:

4.1. 2sc2655.pdf Size:148K _toshiba

2SC2652
2SC2652
2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Industrial Applications Power Amplifier Applications Unit: mm Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW • High-speed switching: tstg = 1.0 ?s (typ.) • Complementary to 2SA1020. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 2 A Base current IB 0.5 A JEDEC TO-92MOD Collector power dissipation PC 900 mW JEITA ? Junction temperature Tj 150 °C TOSHIBA 2-5J1A Storage temperature range Tstg -55 to 150 °C Weight: 0.36 g (typ.) Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significan

4.2. 2sc2654.pdf Size:96K _nec

2SC2652
2SC2652
DATA SHEET SILICON POWER TRANSISTOR 2SC2654 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) • Large current capacitance in small dimension: IC(DC) = 7 A • Low collector saturation voltage: VCE(sat) = 0.3 V MAX. (IC = 3.0 A) • Ideal for use in a lamp driver • Complementary transistor: 2SA1129 ABSOLUTE MAXIMUM RATINGS (Ta = 25° °C) ° ° Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 40 V Emitter to base voltage VEBO 7.0 V Collector current (DC) IC(DC) 7.0 A Electrode Connection Collector current (pulse) IC(pulse)*15 A Base current (DC) IB(DC) 3.5 A Total power dissipation PT (Tc = 25°C) 40 W Total power dissipation PT (Ta = 25°C) 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C * PW ? 300 µs, duty cycle ? 10% ELECTRICAL CHARACTERISTICS (Ta = 25° °C) ° ° Parameter Symbol Conditions MIN. TYP. MAX. Un

4.3. 2sc2655.pdf Size:254K _utc

2SC2652
2SC2652
UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: TSTG=1.0?s (Typ.) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC2655L-x-AE3-R 2SC2655G-x-AE3-R SOT-23 E B C Tape Reel 2SC2655L-x-T9N-B 2SC2655G-x-T9N-B TO-92NL E C B Tape Box 2SC2655L-x-T9N-K 2SC2655G-x-T9N-K TO-92NL E C B Bulk 2SC2655L-x-T9N-R 2SC2655G-x-T9N-R TO-92NL E C B Tape Reel MARKING (FOR SOT-23 PACKAGE) www.unisonic.com.tw 1 of 4 Copyright © 2011Unisonic Technologies Co., Ltd QW-R211-013.F 2SC2655 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS ( TA=25°C ,unless otherwise specified ) PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 2 A Collector Current (Pulse) (Note 1)

4.4. 2sc2656.pdf Size:124K _fuji

2SC2652
2SC2652
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

4.5. 2sc2655.pdf Size:212K _secos

2SC2652
2SC2652
2SC2655 2A , 50V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92MOD FEATURES ? Low saturation voltage:VCE(sat)=0.5V(Max)(IC=1A) A D ? High speed switching time:tstg=1?s(Typ.) B ? Complementary to 2SA1020 K E F CLASSIFICATION OF hFE (1) C Product-Rank 2SC2655-O 2SC2655-Y Range 70-140 120-240 N G H ? Emitter ? Collector ? Base M J L Collector ?? Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 5.50 6.50 H 1.70 2.05 B 8.00 9.00 J 2.70 3.20 ?? C 12.70 14.50 K 0.85 1.15 Base D 4.50 5.30 L 1.60 Max E 0.35 0.65 M 0.00 0.40 F 0.30 0.51 N 4.00 Min ?? G 1.50 TYP. Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 50 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 2 A Collector Power Dissipa

4.6. 2sc2654.pdf Size:276K _inchange_semiconductor

2SC2652
2SC2652
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2654 DESCRIPTION ·High Collector Current:: IC= 7A ·Low Collector Saturation Voltage :VCE(sat)= 0.3(V)(Max)@IC= 3A ·Complement to Type 2SA1129 APPLICATIONS ·Designed for low-frequency power amplifiers and mid-speed switching applications. ·Ideal for use in a lamp driver. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A IBB Base Current- Continuous 3.5 A Total Power Dissipation 1.5 @ Ta=25? PC W Total Power Dissipation 40 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2654 ELECTRICAL CHARACTERISTICS

4.7. 2sc2650.pdf Size:254K _inchange_semiconductor

2SC2652
2SC2652
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2650 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Switching regulator applicaition. ·High voltage switching application. ·High speed DC-DC converter application. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A IBB Base Current-Continuous 5 A Collector Power Dissipation PC @ TC=25? 100 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2650 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO C

4.8. 2sc2658.pdf Size:229K _inchange_semiconductor

2SC2652
2SC2652
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2658 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min) ·High Switching Speed APPLICATIONS ·Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A Collector Power Dissipation PC @TC=25? 90 W Tj Junction Temperature 150 ? Tstg Storage Temperature Range -65~150 ? isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2658 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ; L= 25mH 500 V Collector-Emitter Saturation Voltage

4.9. 2sc2656.pdf Size:230K _inchange_semiconductor

2SC2652
2SC2652
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2656 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid state relay ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VCEO(SUS) Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 7 A IBB Base Current-Continuous 2 A Collector Power Dissipation PC @ TC=25? 80 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.5 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2656

4.10. 2sc2659.pdf Size:226K _inchange_semiconductor

2SC2652
2SC2652
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2659 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min) ·High Switching Speed APPLICATIONS ·Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A Collector Power Dissipation PC @TC=25? 120 W Tj Junction Temperature 150 ? Tstg Storage Temperature Range -55~150 ? isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2659 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ; L= 25mH 500 V Collector-Emitter Saturation Voltag

4.11. 2sc2657.pdf Size:229K _inchange_semiconductor

2SC2652
2SC2652
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2657 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min) ·High Switching Speed APPLICATIONS ·Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak 3 A Collector Power Dissipation PC @TC=25? 70 W Tj Junction Temperature 150 ? Tstg Storage Temperature Range -65~150 ? isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2657 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ; L= 25mH 500 V Collector-Emitter Saturation Voltag

4.12. 2sc2655_to-92mod.pdf Size:276K _lge

2SC2652
2SC2652
2SC2655 TO-92MOD Transistor (NPN) 1.EMITTER TO-92MOD 1 2 2.COLLECTOR 3 3.BASE Features 5.800 Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) 6.200 High speed switching time: tstg=1?s(Typ.) Complementary to 2SA1020 8.400 8.800 MAXIMUM RATINGS (TA=25? unless otherwise noted) 0.900 1.100 Symbol Parameter Symbol Units 0.400 0.600 VCBO Collector-Base Voltage 50 V 13.800 VCEO Collector-Emitter Voltage 50 V 14.200 VEBO Emitter-Base Voltage 5 V IC Collector Current –Continuous 2 A 1.500 TYP 2.900 Dimensions in inches and (millimeters) 3.100 PC Collector Power Dissipation 0.9 W 0.000 1.600 TJ Junction Temperature 150 ? 0.380 0.400 4.700 Tstg Storage Temperature -55-150 ? 0.500 5.100 1.730 ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) 2.030 4.000 Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100?A,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO

4.13. 2sc2655_to-92l.pdf Size:251K _lge

2SC2652
2SC2652
2SC2655 TO-92L Transistor (NPN) TO-92L 1.EMITTER 2.COLLECTOR 3.BASE 4.700 2 3 5.100 1 Features Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) 7.800 High speed switching time: tstg=1?s(Typ.) 8.200 Complementary to 2SA1020 0.600 0.800 MAXIMUM RATINGS (TA=25? unless otherwise noted) 0.350 Symbol Parameter Symbol Units 0.550 13.800 VCBO Collector-Base Voltage 50 V 14.200 VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V 1.270 TYP IC Collector Current –Continuous 2 A 2.440 2.640 PC Collector Power Dissipation 0.9 W 0.000 1.600 TJ Junction Temperature 150 ? 0.300 0.350 Dimensions in inches and (millimeters) Tstg Storage Temperature -55-150 ? 0.450 3.700 4.100 1.280 ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) 1.580 4.000 Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100?A,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO I

4.14. 2sc2655.pdf Size:277K _wietron

2SC2652
2SC2652
2SC2655 NPN General Purpose Transistors P b Lead(Pb)-Free 1 2 3 1.EMITTER 3.BASE 2.COLLECTOR TO-92MOD ELECTRICAL CHARACTERISTICS(Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO V Ic=100?A,IE=0 50 Collector-emitter breakdown voltage V(BR)CEO V Ic=10mA,IB=0 50 Emitter-base breakdown voltage V(BR)EBO V IE=100?A,IC=0 5 Collector cut-off current ICBO ?A VCB=50V,IE=0 1 Emitter cut-off current IEBO ?A VEB=5V,IC=0 1 hFE(1) VCE=2V,IC=500mA 70 240 DC current gain hFE(2) VCE=2V,IC=1.5A 40 Collector-emitter saturation voltage VCE(sat) V IC=1A,IB=0.05A 0.5 Base-emitter saturation voltage VBE(sat) V IC=1A,IB=0.05A 1.2 MHz Transition frequency f VCE=2V,IC=0.5A 100 T Collector output capacitance Cob pF VCB=10V,IE=0,f=1MHz 30 Tune on Time ton 0.1 Vcc=30V,Ic=1A, Switch time Storage Time tstg ?s 1.0 I =-I =0.05A B1 B2 Fall Time tf 0.1 CLASSIFICATION OF

See also transistors datasheet: 2SC2645 , 2SC2646 , 2SC2647 , 2SC2648 , 2SC2649 , 2SC265 , 2SC2650 , 2SC2651 , SS8550 , 2SC2653 , 2SC2654 , 2SC2655 , 2SC2655-O , 2SC2655-Y , 2SC2656 , 2SC2657 , 2SC2657A .

Keywords

 2SC2652 Datasheet  2SC2652 Datenblatt  2SC2652 RoHS  2SC2652 Distributor
 2SC2652 Application Notes  2SC2652 Component  2SC2652 Circuit  2SC2652 Schematic
 2SC2652 Equivalent  2SC2652 Cross Reference  2SC2652 Data Sheet  2SC2652 Fiche Technique

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