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2SC2652
  2SC2652
  2SC2652
  2SC2652
 
2SC2652
  2SC2652
  2SC2652
  2SC2652
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC536SP
2SC537 .. 2SC5819
2SC582 .. 2SC690M
2SC691 .. 2SC90
2SC900 .. 2SD1065S
2SD1066 .. 2SD1257A
2SD1258 .. 2SD1446
2SD1447 .. 2SD1667
2SD1667Q .. 2SD1854
2SD1855 .. 2SD21
2SD2100 .. 2SD2449
2SD2453 .. 2SD365A
2SD366 .. 2SD594
2SD596 .. 2SD794-O
2SD794-R .. 2STF1550
2STF2220 .. 40261
40262 .. 40837
40850 .. A747A
A747B .. ACY23
ACY23V .. AF170
AF171 .. ASY85
ASY86 .. BC158C
BC158V .. BC250
BC250A .. BC340-6
BC341 .. BC487
BC487-18 .. BC817-16
BC817-16L .. BC860
BC860A .. BCW14
BCW14K .. BCW98B
BCW98C .. BCY72QF
BCY76 .. BD233
BD233-10 .. BD371D-6
BD372 .. BD618
BD619 .. BD952F
BD953 .. BDW24
BDW24A .. BDY12-10
BDY12-16 .. BF241C
BF241D .. BF432
BF432L .. BF870EA
BF870S .. BFQ38S
BFQ39 .. BFS505
BFS51 .. BFV97N
BFV98 .. BFY86A
BFY86B .. BLY17
BLY17A .. BSS82BL
BSS82C .. BSX61
BSX62 .. BTB9435L3
BTC1510E3 .. BU209A
BU210 .. BUF405AFI
BUF405AFP .. BUS21C
BUS21D .. BUW74
BUW75 .. BUY78
BUY79 .. CD9012GHI
CD9012J .. CIL148B
CIL148C .. CL155B
CL155C .. CPS1545B
CPS1550B .. CSA952M
CSA952M9AW .. CSC2611
CSC2655 .. CTP1033
CTP1034 .. D29J10
D29J2 .. D42CU11
D42CU12 .. D64TS5
D64VE3 .. DT34-300
DT34-400 .. DTC014EUB
DTC014YEB .. DTL3425
DTL3426 .. ECG2327
ECG2328 .. ED1601D
ED1601E .. ET1550
ET1551 .. FE4016
FE4017 .. FMC4A
FMC5A .. FPC1317
FPC1318 .. FXT551
FXT551SM .. GE10022
GE10023 .. GET2484
GET2904 .. GSDR10025I
GSDR15020 .. GT405B
GT405G .. HEPS3021
HEPS3024 .. HSE125
HSE127 .. IMT1A
IMT2A .. K2105
K2105A .. KRA122S
KRA152F .. KRC114
KRC114M .. KRC864F
KRC864U .. KSB744A-O
KSB744A-R .. KSC3953
KSC3953C .. KSD986
KSD986-O .. KT209L
KT209M .. KT343B
KT343V .. KT640B-2
KT640V-2 .. KT817A9
KT817B .. KT9144A9
KT9145A9 .. KTC2983D
KTC2983L .. KTX215U
KTX216U .. MD1128
MD1129 .. MJ13332
MJ13333 .. MJE13003-P
MJE13003B .. MJF16206
MJF16210 .. MMBR941BLT3
MMBR941LT1 .. MMBTA43LT1
MMBTA44 .. MP1547
MP1547A .. MP601
MP601A .. MPS3710
MPS3711 .. MPSW3725
MPSW42 .. MT0492
MT0493 .. NA21YX
NA21YY .. NB021FJ
NB021FK .. NB213XY
NB213Y .. NKT224
NKT225 .. NR421FE
NR421FF .. NTE2426
NTE2427 .. P213A
P213B .. PDTA113ZE
PDTA113ZM .. PMD13K40
PMD13K60 .. PT902
PT902-1 .. RCA6341
RCA8203 .. RN1905
RN1905AFS .. RN2911
RN2911AFS .. S2818
S2818A .. SE6023
SE6062 .. SM2176
SM2177 .. SRC1205E
SRC1205EF .. STD1802
STD1802T4-A .. T1250
T1251 .. TBC557
TBC558 .. TIP31C
TIP31CE3 .. TIX3034
TIX3035 .. TN5129
TN5130 .. TR01042
TR01062-1 .. UN1216S
UN1217Q .. UP1753
UP1851 .. ZTX1053A
ZTX1055A .. ZTX531
ZTX531K .. ZXTPS720MC
 
2SC2652 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SC2652 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC2652

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 300

Maximum collector-base voltage |Ucb|, V: 85

Maximum collector-emitter voltage |Uce|, V: 55

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 20

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz: 28

Collector capacitance (Cc), pF: 300

Forward current transfer ratio (hFE), min: 10

Noise Figure, dB: -

Package of 2SC2652 transistor: MD34

2SC2652 Equivalent Transistors - Cross-Reference Search

2SC2652 PDF doc:

4.1. 2sc2655.pdf Size:148K _toshiba

2SC2652
2SC2652
2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Industrial Applications Power Amplifier Applications Unit: mm Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW • High-speed switching: tstg = 1.0 ?s (typ.) • Complementary to 2SA1020. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 2 A Base current IB 0.5 A JEDEC TO-92MOD Collector power dissipation PC 900 mW JEITA ? Junction temperature Tj 150 °C TOSHIBA 2-5J1A Storage temperature range Tstg -55 to 150 °C Weight: 0.36 g (typ.) Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significan

4.2. 2sc2654.pdf Size:96K _nec

2SC2652
2SC2652
DATA SHEET SILICON POWER TRANSISTOR 2SC2654 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) • Large current capacitance in small dimension: IC(DC) = 7 A • Low collector saturation voltage: VCE(sat) = 0.3 V MAX. (IC = 3.0 A) • Ideal for use in a lamp driver • Complementary transistor: 2SA1129 ABSOLUTE MAXIMUM RATINGS (Ta = 25° °C) ° ° Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 40 V Emitter to base voltage VEBO 7.0 V Collector current (DC) IC(DC) 7.0 A Electrode Connection Collector current (pulse) IC(pulse)*15 A Base current (DC) IB(DC) 3.5 A Total power dissipation PT (Tc = 25°C) 40 W Total power dissipation PT (Ta = 25°C) 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C * PW ? 300 µs, duty cycle ? 10% ELECTRICAL CHARACTERISTICS (Ta = 25° °C) ° ° Parameter Symbol Conditions MIN. TYP. MAX. Un

4.3. 2sc2655.pdf Size:254K _utc

2SC2652
2SC2652
UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: TSTG=1.0?s (Typ.) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC2655L-x-AE3-R 2SC2655G-x-AE3-R SOT-23 E B C Tape Reel 2SC2655L-x-T9N-B 2SC2655G-x-T9N-B TO-92NL E C B Tape Box 2SC2655L-x-T9N-K 2SC2655G-x-T9N-K TO-92NL E C B Bulk 2SC2655L-x-T9N-R 2SC2655G-x-T9N-R TO-92NL E C B Tape Reel MARKING (FOR SOT-23 PACKAGE) www.unisonic.com.tw 1 of 4 Copyright © 2011Unisonic Technologies Co., Ltd QW-R211-013.F 2SC2655 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS ( TA=25°C ,unless otherwise specified ) PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 2 A Collector Current (Pulse) (Note 1)

4.4. 2sc2656.pdf Size:124K _fuji

2SC2652
2SC2652
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

4.5. 2sc2655.pdf Size:212K _secos

2SC2652
2SC2652
2SC2655 2A , 50V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92MOD FEATURES ? Low saturation voltage:VCE(sat)=0.5V(Max)(IC=1A) A D ? High speed switching time:tstg=1?s(Typ.) B ? Complementary to 2SA1020 K E F CLASSIFICATION OF hFE (1) C Product-Rank 2SC2655-O 2SC2655-Y Range 70-140 120-240 N G H ? Emitter ? Collector ? Base M J L Collector ?? Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 5.50 6.50 H 1.70 2.05 B 8.00 9.00 J 2.70 3.20 ?? C 12.70 14.50 K 0.85 1.15 Base D 4.50 5.30 L 1.60 Max E 0.35 0.65 M 0.00 0.40 F 0.30 0.51 N 4.00 Min ?? G 1.50 TYP. Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 50 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 2 A Collector Power Dissipa

4.6. 2sc2657.pdf Size:229K _inchange_semiconductor

2SC2652
2SC2652
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2657 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min) ·High Switching Speed APPLICATIONS ·Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak 3 A Collector Power Dissipation PC @TC=25? 70 W Tj Junction Temperature 150 ? Tstg Storage Temperature Range -65~150 ? isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2657 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ; L= 25mH 500 V Collector-Emitter Saturation Voltag

4.7. 2sc2659.pdf Size:226K _inchange_semiconductor

2SC2652
2SC2652
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2659 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min) ·High Switching Speed APPLICATIONS ·Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A Collector Power Dissipation PC @TC=25? 120 W Tj Junction Temperature 150 ? Tstg Storage Temperature Range -55~150 ? isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2659 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ; L= 25mH 500 V Collector-Emitter Saturation Voltag

4.8. 2sc2656.pdf Size:230K _inchange_semiconductor

2SC2652
2SC2652
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2656 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid state relay ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VCEO(SUS) Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 7 A IBB Base Current-Continuous 2 A Collector Power Dissipation PC @ TC=25? 80 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.5 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2656

4.9. 2sc2658.pdf Size:229K _inchange_semiconductor

2SC2652
2SC2652
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2658 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min) ·High Switching Speed APPLICATIONS ·Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A Collector Power Dissipation PC @TC=25? 90 W Tj Junction Temperature 150 ? Tstg Storage Temperature Range -65~150 ? isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2658 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ; L= 25mH 500 V Collector-Emitter Saturation Voltage

4.10. 2sc2650.pdf Size:254K _inchange_semiconductor

2SC2652
2SC2652
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2650 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Switching regulator applicaition. ·High voltage switching application. ·High speed DC-DC converter application. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A IBB Base Current-Continuous 5 A Collector Power Dissipation PC @ TC=25? 100 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2650 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO C

4.11. 2sc2654.pdf Size:276K _inchange_semiconductor

2SC2652
2SC2652
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2654 DESCRIPTION ·High Collector Current:: IC= 7A ·Low Collector Saturation Voltage :VCE(sat)= 0.3(V)(Max)@IC= 3A ·Complement to Type 2SA1129 APPLICATIONS ·Designed for low-frequency power amplifiers and mid-speed switching applications. ·Ideal for use in a lamp driver. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A IBB Base Current- Continuous 3.5 A Total Power Dissipation 1.5 @ Ta=25? PC W Total Power Dissipation 40 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2654 ELECTRICAL CHARACTERISTICS

4.12. 2sc2655_to-92mod.pdf Size:276K _lge

2SC2652
2SC2652
2SC2655 TO-92MOD Transistor (NPN) 1.EMITTER TO-92MOD 1 2 2.COLLECTOR 3 3.BASE Features 5.800 Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) 6.200 High speed switching time: tstg=1?s(Typ.) Complementary to 2SA1020 8.400 8.800 MAXIMUM RATINGS (TA=25? unless otherwise noted) 0.900 1.100 Symbol Parameter Symbol Units 0.400 0.600 VCBO Collector-Base Voltage 50 V 13.800 VCEO Collector-Emitter Voltage 50 V 14.200 VEBO Emitter-Base Voltage 5 V IC Collector Current –Continuous 2 A 1.500 TYP 2.900 Dimensions in inches and (millimeters) 3.100 PC Collector Power Dissipation 0.9 W 0.000 1.600 TJ Junction Temperature 150 ? 0.380 0.400 4.700 Tstg Storage Temperature -55-150 ? 0.500 5.100 1.730 ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) 2.030 4.000 Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100?A,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO

4.13. 2sc2655_to-92l.pdf Size:251K _lge

2SC2652
2SC2652
2SC2655 TO-92L Transistor (NPN) TO-92L 1.EMITTER 2.COLLECTOR 3.BASE 4.700 2 3 5.100 1 Features Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) 7.800 High speed switching time: tstg=1?s(Typ.) 8.200 Complementary to 2SA1020 0.600 0.800 MAXIMUM RATINGS (TA=25? unless otherwise noted) 0.350 Symbol Parameter Symbol Units 0.550 13.800 VCBO Collector-Base Voltage 50 V 14.200 VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V 1.270 TYP IC Collector Current –Continuous 2 A 2.440 2.640 PC Collector Power Dissipation 0.9 W 0.000 1.600 TJ Junction Temperature 150 ? 0.300 0.350 Dimensions in inches and (millimeters) Tstg Storage Temperature -55-150 ? 0.450 3.700 4.100 1.280 ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) 1.580 4.000 Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100?A,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO I

4.14. 2sc2655.pdf Size:277K _wietron

2SC2652
2SC2652
2SC2655 NPN General Purpose Transistors P b Lead(Pb)-Free 1 2 3 1.EMITTER 3.BASE 2.COLLECTOR TO-92MOD ELECTRICAL CHARACTERISTICS(Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO V Ic=100?A,IE=0 50 Collector-emitter breakdown voltage V(BR)CEO V Ic=10mA,IB=0 50 Emitter-base breakdown voltage V(BR)EBO V IE=100?A,IC=0 5 Collector cut-off current ICBO ?A VCB=50V,IE=0 1 Emitter cut-off current IEBO ?A VEB=5V,IC=0 1 hFE(1) VCE=2V,IC=500mA 70 240 DC current gain hFE(2) VCE=2V,IC=1.5A 40 Collector-emitter saturation voltage VCE(sat) V IC=1A,IB=0.05A 0.5 Base-emitter saturation voltage VBE(sat) V IC=1A,IB=0.05A 1.2 MHz Transition frequency f VCE=2V,IC=0.5A 100 T Collector output capacitance Cob pF VCB=10V,IE=0,f=1MHz 30 Tune on Time ton 0.1 Vcc=30V,Ic=1A, Switch time Storage Time tstg ?s 1.0 I =-I =0.05A B1 B2 Fall Time tf 0.1 CLASSIFICATION OF

See also transistors datasheet: 2SC2645 , 2SC2646 , 2SC2647 , 2SC2648 , 2SC2649 , 2SC265 , 2SC2650 , 2SC2651 , SS8550 , 2SC2653 , 2SC2654 , 2SC2655 , 2SC2655-O , 2SC2655-Y , 2SC2656 , 2SC2657 , 2SC2657A .

Keywords

 2SC2652 Datasheet  2SC2652 Datenblatt  2SC2652 RoHS  2SC2652 Distributor
 2SC2652 Application Notes  2SC2652 Component  2SC2652 Circuit  2SC2652 Schematic
 2SC2652 Equivalent  2SC2652 Cross Reference  2SC2652 Data Sheet  2SC2652 Fiche Technique

 

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