All Transistors. 2SC2652 Datasheet

 

2SC2652 Transistor. Datasheet pdf. Equivalent

Type Designator: 2SC2652

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 300 W

Maximum Collector-Base Voltage |Vcb|: 85 V

Maximum Collector-Emitter Voltage |Vce|: 55 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 28 MHz

Collector Capacitance (Cc): 300 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: MD34

2SC2652 Transistor Equivalent Substitute - Cross-Reference Search

2SC2652 Datasheet PDF:

4.1. 2sc2655.pdf Size:148K _toshiba

2SC2652
2SC2652

2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Industrial Applications Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation: PC = 900 mW High-speed switching: tstg = 1.0 ?s (typ.) Complementary to 2SA1020. Absolute Maximum Ratings (Ta

4.2. 2sc2654.pdf Size:96K _nec

2SC2652
2SC2652

DATA SHEET SILICON POWER TRANSISTOR 2SC2654 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) Large current capacitance in small dimension: IC(DC) = 7 A Low collector saturation voltage: VCE(sat) = 0.3 V MAX. (IC = 3.0 A) Ideal for use in a lamp driver Complementary transistor: 2SA1129 ABSOLUTE MAXIMUM

4.3. 2sc2655.pdf Size:254K _utc

2SC2652
2SC2652

UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: TSTG=1.0?s (Typ.) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC2655L-x-AE3-R 2SC2655G-x-AE3-R SOT-23 E B C Tape

4.4. 2sc2656.pdf Size:124K _fuji

2SC2652
2SC2652

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

4.5. 2sc2654_3da2654.pdf Size:254K _no

2SC2652
2SC2652

2SC2654(3DA2654) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于低频功率放大和中速开关。 Purpose: For low-frequency power amplifiers and mid-speed switching. 特点:大电流,低饱和,与 2SA1129(3CA1129)互补。 Features: Large current capacity with small package, low collector saturation voltage, pair with 2SA1129(3CA1129). 极限参数/Absolute

4.6. 2sc2655.pdf Size:212K _secos

2SC2652
2SC2652

2SC2655 2A , 50V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92MOD FEATURES ? Low saturation voltage:VCE(sat)=0.5V(Max)(IC=1A) A D ? High speed switching time:tstg=1?s(Typ.) B ? Complementary to 2SA1020 K E F CLASSIFICATION OF hFE (1) C Product-Rank 2SC2655-O 2SC2655-Y Ran

4.7. 2sc2657.pdf Size:229K _inchange_semiconductor

2SC2652
2SC2652

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2657 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min) ·High Switching Speed APPLICATIONS ·Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Volt

4.8. 2sc2656.pdf Size:230K _inchange_semiconductor

2SC2652
2SC2652

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2656 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid state relay ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALU

4.9. 2sc2658.pdf Size:229K _inchange_semiconductor

2SC2652
2SC2652

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2658 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min) ·High Switching Speed APPLICATIONS ·Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Volt

4.10. 2sc2659.pdf Size:226K _inchange_semiconductor

2SC2652
2SC2652

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2659 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min) ·High Switching Speed APPLICATIONS ·Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Volt

4.11. 2sc2654.pdf Size:276K _inchange_semiconductor

2SC2652
2SC2652

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2654 DESCRIPTION ·High Collector Current:: IC= 7A ·Low Collector Saturation Voltage :VCE(sat)= 0.3(V)(Max)@IC= 3A ·Complement to Type 2SA1129 APPLICATIONS ·Designed for low-frequency power amplifiers and mid-speed switching applications. ·Ideal for use in a lamp driver. ABSOLUTE MAXIMUM

4.12. 2sc2650.pdf Size:254K _inchange_semiconductor

2SC2652
2SC2652

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2650 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Switching regulator applicaition. ·High voltage switching application. ·High speed DC-DC converter application. ABSOLUTE MAXIMUM RATINGS(Ta=25?

4.13. 2sc2655_to-92mod.pdf Size:276K _lge

2SC2652
2SC2652

2SC2655 TO-92MOD Transistor (NPN) 1.EMITTER TO-92MOD 1 2 2.COLLECTOR 3 3.BASE Features 5.800 Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) 6.200 High speed switching time: tstg=1?s(Typ.) Complementary to 2SA1020 8.400 8.800 MAXIMUM RATINGS (TA=25? unless otherwise noted) 0.900 1.100 Symbol Parameter Symbol Units 0.400 0.600 VCBO Collector-Base Voltage 50 V

4.14. 2sc2655_to-92l.pdf Size:251K _lge

2SC2652
2SC2652

2SC2655 TO-92L Transistor (NPN) TO-92L 1.EMITTER 2.COLLECTOR 3.BASE 4.700 2 3 5.100 1 Features Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) 7.800 High speed switching time: tstg=1?s(Typ.) 8.200 Complementary to 2SA1020 0.600 0.800 MAXIMUM RATINGS (TA=25? unless otherwise noted) 0.350 Symbol Parameter Symbol Units 0.550 13.800 VCBO Collector-Base Voltage

4.15. 2sc2655.pdf Size:277K _wietron

2SC2652
2SC2652

2SC2655 NPN General Purpose Transistors P b Lead(Pb)-Free 1 2 3 1.EMITTER 3.BASE 2.COLLECTOR TO-92MOD ELECTRICAL CHARACTERISTICS(Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO V Ic=100?A,IE=0 50 Collector-emitter breakdown voltage V(BR)CEO V Ic=10mA,IB=0 50 Emitter-base breakdown voltage V(BR)EBO

Datasheet: 2SC2645 , 2SC2646 , 2SC2647 , 2SC2648 , 2SC2649 , 2SC265 , 2SC2650 , 2SC2651 , SS8550 , 2SC2653 , 2SC2654 , 2SC2655 , 2SC2655O , 2SC2655Y , 2SC2656 , 2SC2657 , 2SC2657A .

 


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