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2SC2652
  2SC2652
  2SC2652
 
2SC2652
  2SC2652
  2SC2652
 
2SC2652
  2SC2652
 
 
List
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
2SC2652 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SC2652 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC2652

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 300

Maximum collector-base voltage |Ucb|, V: 85

Maximum collector-emitter voltage |Uce|, V: 55

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 20

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz: 28

Collector capacitance (Cc), pF: 300

Forward current transfer ratio (hFE), min: 10

Noise Figure, dB: -

Package of 2SC2652 transistor: MD34

2SC2652 Equivalent Transistors - Cross-Reference Search

2SC2652 PDF doc:

4.1. 2sc2655.pdf Size:148K _toshiba

2SC2652
2SC2652
2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Industrial Applications Power Amplifier Applications Unit: mm Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW • High-speed switching: tstg = 1.0 ?s (typ.) • Complementary to 2SA1020. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 2 A Base current IB 0.5 A JEDEC TO-92MOD Collector power dissipation PC 900 mW JEITA ? Junction temperature Tj 150 °C TOSHIBA 2-5J1A Storage temperature range Tstg -55 to 150 °C Weight: 0.36 g (typ.) Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significan

4.2. 2sc2654.pdf Size:96K _nec

2SC2652
2SC2652
DATA SHEET SILICON POWER TRANSISTOR 2SC2654 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) • Large current capacitance in small dimension: IC(DC) = 7 A • Low collector saturation voltage: VCE(sat) = 0.3 V MAX. (IC = 3.0 A) • Ideal for use in a lamp driver • Complementary transistor: 2SA1129 ABSOLUTE MAXIMUM RATINGS (Ta = 25° °C) ° ° Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 40 V Emitter to base voltage VEBO 7.0 V Collector current (DC) IC(DC) 7.0 A Electrode Connection Collector current (pulse) IC(pulse)*15 A Base current (DC) IB(DC) 3.5 A Total power dissipation PT (Tc = 25°C) 40 W Total power dissipation PT (Ta = 25°C) 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C * PW ? 300 µs, duty cycle ? 10% ELECTRICAL CHARACTERISTICS (Ta = 25° °C) ° ° Parameter Symbol Conditions MIN. TYP. MAX. Un

4.3. 2sc2656.pdf Size:124K _fuji

2SC2652
2SC2652
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

4.4. 2sc2655.pdf Size:212K _secos

2SC2652
2SC2652
2SC2655 2A , 50V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92MOD FEATURES ? Low saturation voltage:VCE(sat)=0.5V(Max)(IC=1A) A D ? High speed switching time:tstg=1?s(Typ.) B ? Complementary to 2SA1020 K E F CLASSIFICATION OF hFE (1) C Product-Rank 2SC2655-O 2SC2655-Y Range 70-140 120-240 N G H ? Emitter ? Collector ? Base M J L Collector ?? Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 5.50 6.50 H 1.70 2.05 B 8.00 9.00 J 2.70 3.20 ?? C 12.70 14.50 K 0.85 1.15 Base D 4.50 5.30 L 1.60 Max E 0.35 0.65 M 0.00 0.40 F 0.30 0.51 N 4.00 Min ?? G 1.50 TYP. Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 50 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 2 A Collector Power Dissipa

4.5. 2sc2654.pdf Size:276K _inchange_semiconductor

2SC2652
2SC2652
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2654 DESCRIPTION ·High Collector Current:: IC= 7A ·Low Collector Saturation Voltage :VCE(sat)= 0.3(V)(Max)@IC= 3A ·Complement to Type 2SA1129 APPLICATIONS ·Designed for low-frequency power amplifiers and mid-speed switching applications. ·Ideal for use in a lamp driver. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A IBB Base Current- Continuous 3.5 A Total Power Dissipation 1.5 @ Ta=25? PC W Total Power Dissipation 40 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2654 ELECTRICAL CHARACTERISTICS

4.6. 2sc2650.pdf Size:254K _inchange_semiconductor

2SC2652
2SC2652
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2650 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Switching regulator applicaition. ·High voltage switching application. ·High speed DC-DC converter application. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A IBB Base Current-Continuous 5 A Collector Power Dissipation PC @ TC=25? 100 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2650 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO C

4.7. 2sc2658.pdf Size:229K _inchange_semiconductor

2SC2652
2SC2652
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2658 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min) ·High Switching Speed APPLICATIONS ·Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A Collector Power Dissipation PC @TC=25? 90 W Tj Junction Temperature 150 ? Tstg Storage Temperature Range -65~150 ? isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2658 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ; L= 25mH 500 V Collector-Emitter Saturation Voltage

4.8. 2sc2656.pdf Size:230K _inchange_semiconductor

2SC2652
2SC2652
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2656 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid state relay ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VCEO(SUS) Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 7 A IBB Base Current-Continuous 2 A Collector Power Dissipation PC @ TC=25? 80 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.5 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2656

4.9. 2sc2659.pdf Size:226K _inchange_semiconductor

2SC2652
2SC2652
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2659 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min) ·High Switching Speed APPLICATIONS ·Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A Collector Power Dissipation PC @TC=25? 120 W Tj Junction Temperature 150 ? Tstg Storage Temperature Range -55~150 ? isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2659 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ; L= 25mH 500 V Collector-Emitter Saturation Voltag

4.10. 2sc2657.pdf Size:229K _inchange_semiconductor

2SC2652
2SC2652
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2657 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min) ·High Switching Speed APPLICATIONS ·Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak 3 A Collector Power Dissipation PC @TC=25? 70 W Tj Junction Temperature 150 ? Tstg Storage Temperature Range -65~150 ? isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2657 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ; L= 25mH 500 V Collector-Emitter Saturation Voltag

4.11. 2sc2655_to-92mod.pdf Size:276K _lge

2SC2652
2SC2652
2SC2655 TO-92MOD Transistor (NPN) 1.EMITTER TO-92MOD 1 2 2.COLLECTOR 3 3.BASE Features 5.800 Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) 6.200 High speed switching time: tstg=1?s(Typ.) Complementary to 2SA1020 8.400 8.800 MAXIMUM RATINGS (TA=25? unless otherwise noted) 0.900 1.100 Symbol Parameter Symbol Units 0.400 0.600 VCBO Collector-Base Voltage 50 V 13.800 VCEO Collector-Emitter Voltage 50 V 14.200 VEBO Emitter-Base Voltage 5 V IC Collector Current –Continuous 2 A 1.500 TYP 2.900 Dimensions in inches and (millimeters) 3.100 PC Collector Power Dissipation 0.9 W 0.000 1.600 TJ Junction Temperature 150 ? 0.380 0.400 4.700 Tstg Storage Temperature -55-150 ? 0.500 5.100 1.730 ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) 2.030 4.000 Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100?A,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO

4.12. 2sc2655_to-92l.pdf Size:251K _lge

2SC2652
2SC2652
2SC2655 TO-92L Transistor (NPN) TO-92L 1.EMITTER 2.COLLECTOR 3.BASE 4.700 2 3 5.100 1 Features Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) 7.800 High speed switching time: tstg=1?s(Typ.) 8.200 Complementary to 2SA1020 0.600 0.800 MAXIMUM RATINGS (TA=25? unless otherwise noted) 0.350 Symbol Parameter Symbol Units 0.550 13.800 VCBO Collector-Base Voltage 50 V 14.200 VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V 1.270 TYP IC Collector Current –Continuous 2 A 2.440 2.640 PC Collector Power Dissipation 0.9 W 0.000 1.600 TJ Junction Temperature 150 ? 0.300 0.350 Dimensions in inches and (millimeters) Tstg Storage Temperature -55-150 ? 0.450 3.700 4.100 1.280 ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) 1.580 4.000 Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100?A,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO I

4.13. 2sc2655.pdf Size:277K _wietron

2SC2652
2SC2652
2SC2655 NPN General Purpose Transistors P b Lead(Pb)-Free 1 2 3 1.EMITTER 3.BASE 2.COLLECTOR TO-92MOD ELECTRICAL CHARACTERISTICS(Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO V Ic=100?A,IE=0 50 Collector-emitter breakdown voltage V(BR)CEO V Ic=10mA,IB=0 50 Emitter-base breakdown voltage V(BR)EBO V IE=100?A,IC=0 5 Collector cut-off current ICBO ?A VCB=50V,IE=0 1 Emitter cut-off current IEBO ?A VEB=5V,IC=0 1 hFE(1) VCE=2V,IC=500mA 70 240 DC current gain hFE(2) VCE=2V,IC=1.5A 40 Collector-emitter saturation voltage VCE(sat) V IC=1A,IB=0.05A 0.5 Base-emitter saturation voltage VBE(sat) V IC=1A,IB=0.05A 1.2 MHz Transition frequency f VCE=2V,IC=0.5A 100 T Collector output capacitance Cob pF VCB=10V,IE=0,f=1MHz 30 Tune on Time ton 0.1 Vcc=30V,Ic=1A, Switch time Storage Time tstg ?s 1.0 I =-I =0.05A B1 B2 Fall Time tf 0.1 CLASSIFICATION OF

See also transistors datasheet: 2SC2645 , 2SC2646 , 2SC2647 , 2SC2648 , 2SC2649 , 2SC265 , 2SC2650 , 2SC2651 , SS8550 , 2SC2653 , 2SC2654 , 2SC2655 , 2SC2655-O , 2SC2655-Y , 2SC2656 , 2SC2657 , 2SC2657A .

Keywords

 2SC2652 Datasheet  2SC2652 Datenblatt  2SC2652 RoHS  2SC2652 Distributor
 2SC2652 Application Notes  2SC2652 Component  2SC2652 Circuit  2SC2652 Schematic
 2SC2652 Equivalent  2SC2652 Cross Reference  2SC2652 Data Sheet  2SC2652 Fiche Technique

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