2SC2762 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC2762

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.8

Maximum collector-base voltage |Ucb|, V: 35

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 0.4

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 500

Collector capacitance (Cc), pF: 2.5

Forward current transfer ratio (hFE), min: 60

Noise Figure, dB: -

Package of 2SC2762 transistor: TO39

2SC2762 Equivalent Transistors - Cross-Reference Search

2SC2762 PDF document for downloads:

4.1. 2sc2768.pdf Size:105K _fuji

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

4.2. 2sc2768.pdf Size:186K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2768 DESCRIPTION Ў¤ With TO-220C package Ў¤ High speed switching Ў¤ High reliability APPLICATIONS Ў¤ Switching regulators Ў¤ Ultrasonic generators Ў¤ High frequency inverters Ў¤ General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER INC Collector-base voltage Collector-emitter voltage ANG H E SEM Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE 250 200 7 6 1.5 UNIT V V V A A W Ўж Ўж Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25Ўж 40 150 -55~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 3.0 UNIT Ўж /W

4.3. 2sc2769.pdf Size:264K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2769 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid state relay ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 200 V VCEO(SUS) Collector-Emitter Voltage 200 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 10 A IBB Base Current-Continuous 5 A Collector Power Dissipation PC @ TC=25? 100 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.25 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC27

4.4. 2sc2767.pdf Size:184K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2767 DESCRIPTION Ў¤ With TO-220C package Ў¤ High speed switching Ў¤ High reliability APPLICATIONS Ў¤ Switching regulators Ў¤ Ultrasonic generators Ў¤ High frequency inverters Ў¤ General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER INC Collector-base voltage Collector-emitter voltage ANG H E SEM Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE 250 200 7 5 1.5 UNIT V V V A A W Ўж Ўж Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25Ўж 40 150 -55~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 3.0 UNIT Ўж /W

4.5. 2sc2761.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2761 DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 450 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 30 A IB Base current 6 A PC Collector power dissipation TC=25? 200 W Junction temperature 200 ? Tj Storage temperature -65~200 ? Tstg Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2761 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 400 V

See also transistors datasheet: 2SC2759-O , 2SC2759-R , 2SC2759U21 , 2SC2759U22 , 2SC2759U23 , 2SC2759-Y , 2SC2760 , 2SC2761 , TIP31C , 2SC2763 , 2SC2766 , 2SC2766A , 2SC2767 , 2SC2768 , 2SC2768A , 2SC2769 , 2SC2770 .

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