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2SC2782 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC2782

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 220

Maximum collector-base voltage |Ucb|, V: 36

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 20

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz: 175

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 70

Noise Figure, dB: -

Package of 2SC2782 transistor: XM5

2SC2782 Equivalent Transistors - Cross-Reference Search

2SC2782 PDF document for downloads:

1.1. 2sc2782.pdf Size:137K _toshiba

2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm Output Power : Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 36 V Collector-Emitter Voltage VCEO 16 V Emitter-Base Voltage VEBO 4 V Collector Current IC 20 A Collector Power Dissipation PC 220 W Junction Temperature Tj 175 °C Storage Temperature Range Tstg -65~175 °C JEDEC — EIAJ — TOSHIBA 2-13C1A Weight: 5.5g 000707EAA1 • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations

4.1. 2sc2783.pdf Size:117K _toshiba

4.2. 2sc2784.pdf Size:185K _nec

4.3. 2sc2787.pdf Size:228K _nec

4.4. 2sc2785.pdf Size:281K _nec

4.5. 2sc2786.pdf Size:286K _nec

4.6. 2sc2780.pdf Size:209K _nec

4.7. 2sc2788.pdf Size:145K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2788 DESCRIPTION ·With TO-3PN package ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 8 A ICM Collector current-peak 16 A IB Base current 3 A Ta=25? 2.5 PC Collector power dissipation W TC=25? 80 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2788 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDIT

4.8. 2sc2785.pdf Size:494K _lge

2SC2785 TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 3. BASE 1 2 3 Features High voltage VCEO:50V Excellent hFE Linearity:0.92 TYP hFE1 (0.1mA)/ hFE2 (1mA) Complementary to 2SA1175 PNP transistor MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Value Units Parameter VCBO 60 V Collector-Base Voltage VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A Dimensions in inches and (millimeters) PC Collector Power Dissipation 0.25 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100?A, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 ?A Emitter cut-off current IEB

See also transistors datasheet: 2SC2775 , 2SC2776 , 2SC2776-A , 2SC2776-B , 2SC2776-C , 2SC2778 , 2SC2780 , 2SC2781 , 2N3055 , 2SC2783 , 2SC2784 , 2SC2785 , 2SC2785-G , 2SC2785-L , 2SC2785-O , 2SC2785-Y , 2SC2786 .

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