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2SC2890 Transistor (IC) Datasheet. Cross Reference Search. 2SC2890 Equivalent

Type Designator: 2SC2890

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 112

Maximum collector-base voltage |Ucb|, V: 55

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 15

Maksimalna temperatura (Tj), °C: 200

Transition frequency (ft), MHz: 175

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 25

Noise Figure, dB: -

Package of 2SC2890 transistor: TO128

2SC2890 Transistor Equivalent Substitute - Cross-Reference Search

2SC2890 PDF:

4.1. 2sc2899.pdf Size:38K _hitachi

2SC2890
2SC2890

2SC2899 Silicon NPN Triple Diffused Application High speed and high voltage switching Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 10 V Collector current IC 0.5 A Collector peak current IC(peak) 1.0 A

4.2. 2sc2898.pdf Size:50K _hitachi

2SC2890
2SC2890

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

4.3. 2sc2893.pdf Size:14K _advanced-semi

2SC2890
2SC2890

2SC2893 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The ASI 2SC2893 is Designed for A use in UHF amplifiers up to 400 MHz. 4 5 C FEATURES: B E E POUT = 10.7 W Typical at 400 MHz B Omnigold Metallization System C D J E I F MAXIMUM RATINGS G IC 1.5 A H #8-32 UNC K MINIMUM MAXIMUM VCB 55 V DIM inches / mm inches

4.4. 2sc2899.pdf Size:143K _inchange_semiconductor

2SC2890
2SC2890

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2899 DESCRIPTION Ў¤ With TO-126 package Ў¤ High voltage,high speed APPLICATIONS Ў¤ For high speed and high voltage switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IN Collector-base voltage PA

4.5. 2sc2898.pdf Size:164K _inchange_semiconductor

2SC2890
2SC2890

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2898 DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage,high speed Ў¤ High power switching Ў¤ PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base volt

See also transistors datasheet: 2SC2884 , 2SC2885 , 2SC2886 , 2SC2887 , 2SC2888 , 2SC2889 , 2SC288A , 2SC289 , 5609 , 2SC2891 , 2SC2892 , 2SC2893 , 2SC2894 , 2SC2895 , 2SC2896 , 2SC2897 , 2SC2898 .

Search Terms:

 2SC2890 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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