All Transistors Datasheet



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2SC2890
  2SC2890
  2SC2890
 
2SC2890
  2SC2890
  2SC2890
 
2SC2890
  2SC2890
 
 
List
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
2SC2890 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SC2890 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC2890

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 112

Maximum collector-base voltage |Ucb|, V: 55

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 15

Maksimalna temperatura (Tj), °C: 200

Transition frequency (ft), MHz: 175

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 25

Noise Figure, dB: -

Package of 2SC2890 transistor: TO128

2SC2890 Equivalent Transistors - Cross-Reference Search

2SC2890 PDF doc:

4.1. 2sc2899.pdf Size:38K _hitachi

2SC2890
2SC2890
2SC2899 Silicon NPN Triple Diffused Application High speed and high voltage switching Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 10 V Collector current IC 0.5 A Collector peak current IC(peak) 1.0 A Collector power dissipation PC 0.75 W PC*1 10 W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Note: 1. Value at TC = 25 C. 2SC2899 Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter sustain VCEO(sus) 400 V IC = 0.1 A, RBE = ? , L = 100 voltage mH VCEX(sus) 400 V IC = 0.5 A, IB1 = IB2 = 0.1 A, VBE = 5 V, L = 180 H, Clamped Emitter to base breakdown V(BR)EBO 10 V IE = 10 mA, IC = 0 voltage Collector cutoff current ICBO 20 A VCB = 400 V, IC = 0 ICEO 50 A VCE = 350 V, RBE

4.2. 2sc2898.pdf Size:50K _hitachi

2SC2890
2SC2890
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept

4.3. 2sc2893.pdf Size:14K _advanced-semi

2SC2890
2SC2890
2SC2893 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The ASI 2SC2893 is Designed for A use in UHF amplifiers up to 400 MHz. 4 5 C FEATURES: B E E POUT = 10.7 W Typical at 400 MHz B Omnigold Metallization System C D J E I F MAXIMUM RATINGS G IC 1.5 A H #8-32 UNC K MINIMUM MAXIMUM VCB 55 V DIM inches / mm inches / m m 1 .0 1 0 / 2 5 .6 5 1 .0 5 5 / 2 6 .8 0 A VCE 32 V .220 / 5.59 .230 /5.84 B .270 / 6.86 .285 / 7.24 C .003 / 0.08 .007 / 0.18 D VEB 3.0 V .117 / 2.97 .137 / 3.48 E .572 / 14.53 F .130 / 3.30 PDISS 22 W @ TC = 25 C G .245 / 6.22 .255 / 6.48 H .640 / 16.26 I TJ -65 C to +200 C .175 / 4.45 .217 / 5.51 J .275 / 6.99 .285 / 7.24 K TSTG -65 C to +150 C 8.0 C/W ?JC ? ? ? CHARACTERISTICS TC = 25 C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 60 mA 32 V BVCES IC = 8.0 mA VBE = 0 V 55 V IEBO VCE = 2.0 V 500 A ICBO VCB = 30

4.4. 2sc2899.pdf Size:143K _inchange_semiconductor

2SC2890
2SC2890
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2899 DESCRIPTION Ў¤ With TO-126 package Ў¤ High voltage,high speed APPLICATIONS Ў¤ For high speed and high voltage switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IN Collector-base voltage PARAMETER Collector-emitter voltage Emitter-base voltage ANG CH MIC E SE Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE 500 400 10 0.5 1.0 UNIT V V V A A Collector current Collector current-peak Ta=25Ўж 0.75 W 10 150 -55~150 Ўж Ўж PC Collector power dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature

4.5. 2sc2898.pdf Size:164K _inchange_semiconductor

2SC2890
2SC2890
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2898 DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage,high speed Ў¤ High power switching Ў¤ PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage CONDITIONS Open emitter Open base CHA IN Base current Emitter-base voltage Collector current (DC) E SEM NG Open collector OND IC TOR UC VALUE 500 400 7 8 16 4 UNIT V V V A A A W Ўж Ўж Collector current-Peak Collector power dissipation Junction temperature Storage temperature TC=25Ўж 50 150 -55~150

See also transistors datasheet: 2SC2884 , 2SC2885 , 2SC2886 , 2SC2887 , 2SC2888 , 2SC2889 , 2SC288A , 2SC289 , 5609 , 2SC2891 , 2SC2892 , 2SC2893 , 2SC2894 , 2SC2895 , 2SC2896 , 2SC2897 , 2SC2898 .

Keywords

 2SC2890 Datasheet  2SC2890 Datenblatt  2SC2890 RoHS  2SC2890 Distributor
 2SC2890 Application Notes  2SC2890 Component  2SC2890 Circuit  2SC2890 Schematic
 2SC2890 Equivalent  2SC2890 Cross Reference  2SC2890 Data Sheet  2SC2890 Fiche Technique

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