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2SC2922
  2SC2922
  2SC2922
 
2SC2922
  2SC2922
  2SC2922
 
2SC2922
  2SC2922
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU912
BU920 .. BUP39
BUP40 .. BUV98V
BUW11 .. BUY21A
BUY22 .. CCN83
CCS2001 .. CFD2374Q
CFD2375 .. CK28A
CK398 .. CP404
CP405 .. CSA1267Y
CSA1293 .. CSC1684R
CSC1684S .. CSD669A
CSD669AB .. D24A3900A
D26B1 .. D40E4
D40E5 .. D56W2
D6 .. DPLS350E
DPLS350Y .. DTA143XE
DTA143XEA .. DTD113ES
DTD113Z .. ECG13
ECG130 .. ECG482
ECG483 .. ESM3030DV
ESM3045AV .. FCS9018E
FCS9018F .. FJY3009R
FJY3010R .. FMMT6517
FMMT6520 .. FX2369
FX2369A .. GC522
GC522K .. GES5551
GES5551R .. GS-H9033
GS-H9033D .. GT338B
GT338V .. HDA412
HDA420 .. HS5308
HS5810 .. IDD525
IDD526 .. JE9100C
JE9100D .. KRA102
KRA102M .. KRA763U
KRA764E .. KRC836E
KRC836U .. KSB1098-O
KSB1098-R .. KSC2787-R
KSC2787-Y .. KSD5064
KSD5065 .. KST92
KST93 .. KT3198V
KT321A .. KT6134B
KT6134V .. KT814A9
KT814B .. KT897A
KT897B .. KTB1424
KTB1772 .. KTD3055
KTD525 .. MC142
MC150 .. MJ10042
MJ10044 .. MJD350T4
MJD41C .. MJE5851
MJE5852 .. MM869B
MMBA811C5 .. MMBT589
MMBT589L .. MP110B-B
MP110B-G .. MP504A
MP505 .. MPS2925
MPS2926 .. MPSH02
MPSH04 .. MRF905
MRF912 .. NA11HX
NA11HY .. NB013FU
NB013FV .. NB212FY
NB212H .. NKT124
NKT12429 .. NPS5141
NPS5142 .. NTE172A
NTE176 .. OC815
OC816 .. PBSS5160V
PBSS5220T .. PIMD3
PIMH9 .. PN918
PN918R .. RCA1A05
RCA1A06 .. RN1605
RN1606 .. RN2710
RN2710JE .. S15649
S1619 .. SDT9204
SDT9205 .. SGSIF444
SGSIF445 .. SRA2212EF
SRA2212M .. STC5084
STC5085 .. SZD1060
SZD1181 .. TA2470
TA2492 .. TIP140T
TIP141 .. TIS37
TIS38 .. TN4036
TN4037 .. TP929
TP929A .. UN1066
UN1110Q .. UN9218
UN9219 .. ZT403
ZT403P .. ZTX4402L
ZTX4402M .. ZXTP5401FL
ZXTP5401G .. ZXTPS720MC
 
2SC2922 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SC2922 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC2922

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 200

Maximum collector-base voltage |Ucb|, V: 180

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 17

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 25

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 33

Noise Figure, dB: -

Package of 2SC2922 transistor: XM20

2SC2922 Equivalent Transistors - Cross-Reference Search

2SC2922 PDF doc:

1.1. 2sc2922.pdf Size:28K _sanken-ele

2SC2922
2SC2922
LAPT 2SC2922 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1216) Application : Audio and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol Ratings Symbol Conditions Ratings Unit Unit 0.2 6.0 0.3 36.4 VCBO 180 ICBO VCB=180V 100max A V 0.2 24.4 2.1 0.1 VCEO 180 IEBO VEB=5V 100max A 2-o3.2 V 9 VEBO 5 V(BR)CEO IC=25mA 180min V V IC 17 hFE VCE=4V, IC=8V 30min? A a IB 5 VCE(sat) IC=8A, IB=0.8A 2.0max V b A fT PC 200(Tc=25C) VCE=12V, IE=2A 50typ MHz W 2 COB Tj 150 VCB=10V, f=1MHz 250typ pF C 3 0.65+0.2 -0.1 Tstg 55 to +150 1.05+0.2 C ? hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180) -0.1 +0.3 3.0 -0.1 0.1 0.1 5.45 5.45 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 18.4g VCC RL IC VB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (A) (A) ( s) ( s) ( s) a. Part No. b. Lot No. 40 4 10 5 1 1 0.2typ 1.3typ 0

1.2. 2sc2922.pdf Size:165K _inchange_semiconductor

2SC2922
2SC2922
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2922 DESCRIPTION Ў¤ With MT-200 package Ў¤ Complement to type 2SA1216 APPLICATIONS Ў¤ Audio and general purpose PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg Collector-base voltage PARAMETER Collector-emitter voltage INC Emitter-base voltage Collector current E SEM ANG H TC=25Ўж Open emitter Open base OND IC CONDITIONS TOR UC VALUE 180 180 5 17 5 200 150 -55~150 UNIT V V V A A W Ўж Ўж Open collector Base current Collector power dissipation Junction temperature Storage temperature

4.1. 2sc2925_e.pdf Size:40K _panasonic

2SC2922
2SC2922
Transistor 2SC2925 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to emitter voltage VCEO 50 V 1.27 1.27 Emitter to base voltage VEBO 15 V Peak collector current ICP 1.5 A 1:Emitter 1 2 3 Collector current IC 0.7 A 2:Collector 3:Base Collector power dissipation PC 750 mW 2.54 0.15 JEDEC:TO92 Junction temperature Tj 150 ?C EIAJ:SC43A Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 20V, IE = 0 1 A Collector cutoff current ICEO VCE = 20V, IB = 0 10 A Collector to base voltage VCBO IC = 10 A, IE = 0 60 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 50 V Emitter to ba

4.2. 2sc2925.pdf Size:77K _panasonic

2SC2922
2SC2922
Transistors 2SC2925 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 5.00.2 4.00.2 Features High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) 0.70.1 Absolute Maximum Ratings Ta = 25C Parameter Symbol Rating Unit 0.45+0.15 0.45+0.15 0.1 0.1 Collector-base voltage (Emitter open) VCBO 60 V 2.5+0.6 2.5+0.6 0.2 0.2 Collector-emitter voltage (Base open) VCEO 50 V 1: Emitter Emitter-base voltage (Collector open) VEBO 15 V 1 2 3 2: Collector Collector current IC 0.7 A 3: Base EIAJ: SC-43A Peak collector current ICP 1.5 A TO-92-B1 Package Collector power dissipation PC 750 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Electrical Characteristics Ta = 25C 3C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 A, IE = 060V Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 050 V Emitter-base

4.3. 2sc2928.pdf Size:42K _hitachi

2SC2922
2SC2922

4.4. 2sc2929.pdf Size:105K _no

2SC2922
2SC2922

4.5. 2sc2921.pdf Size:27K _sanken-ele

2SC2922
2SC2922
LAPT 2SC2921 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1215) Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-200 Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 6.0 0.3 36.4 VCBO 160 V ICBO VCB=160V 100max A 0.2 24.4 2.1 VCEO 160 V VEB=5V 100max A 2-o3.2 IEBO 0.1 9 VEBO 5 V IC=25mA 160min V V(BR)CEO IC hFE VCE=4V, IC=5A 50min? 15 A a IB VCE(sat) IC=5A, IB=0.5A 2.0max V b 4 A PC fT VCE=12V, IE=2A 60typ MHz 150(Tc=25C) W 2 Tj COB VCB=10V, f=1MHz 200typ pF 150 C 3 0.65+0.2 -0.1 Tstg 55 to +150 C ? hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05+0.2 -0.1 +0.3 3.0 -0.1 0.1 0.1 5.45 5.45 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 18.4g VCC RL IC VB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (mA) (mA) ( s) ( s) ( s) a. Part No. b. Lot No. 60 12 5 5 500 500 0.2typ 1.5typ 0.35typ ICVC

4.6. 2sc2927.pdf Size:56K _inchange_semiconductor

2SC2922
2SC2922
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2927 DESCRIPTION ·With TO-220 package ·High collector-emitter voltage : VCEO=300V ·High frequency:fT=40MHz(Min) APPLICATIONS ·For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 0.2 A PT Collector power dissipation TC=25? 10 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2927 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

4.7. 2sc2928.pdf Size:130K _inchange_semiconductor

2SC2922
2SC2922
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2928 DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·For high voltage,high speed and high power switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(TC=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 5 A ICM Collector current-peak 7 A IB Base current 2.5 A PC Collector power dissipation TC=25? 80 W Junction temperature 150 ? Tj Storage temperature -45~150 ? Tstg Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2928 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown

4.8. 2sc2929.pdf Size:269K _inchange_semiconductor

2SC2922
2SC2922
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2929 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VCEO(SUS) Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 3 A IBB Base Current-Continuous 1 A Collector Power Dissipation PC @ TC=25? 40 W TJ Junction Temperature 150 ? Storage Temperature Range -45~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 3.0 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transi

4.9. 2sc2920.pdf Size:128K _inchange_semiconductor

2SC2922
2SC2922
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2920 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(TC=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 450 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 15 A PC Collector power dissipation TC=25? 150 W Junction temperature 150 ? Tj Storage temperature -55~150 ? Tstg Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2920 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=? 400 V

4.10. 2sc2923.pdf Size:109K _inchange_semiconductor

2SC2922
2SC2922
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2923 DESCRIPTION Ў¤ With TO-202 package Ў¤ High VCEO Ў¤ Low COB APPLICATIONS Ў¤ For color TV chroma output applications PINNING(See Fig.2) PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-202) and symbol DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM Collector-base voltage PARAMETER CHA IN Collector current Collector-emitter voltage Emitter-base voltage ES NG Open emitter Open base MIC E CONDITIONS OND TOR UC VALUE 300 300 7 0.1 0.2 UNIT V V V A A Open collector Collector current-peak Ta=25Ўж 1.4 W 15 150 -55~150 Ўж Ўж PC Collector power dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature

4.11. 2sc2921.pdf Size:163K _inchange_semiconductor

2SC2922
2SC2922
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2921 DESCRIPTION Ў¤ With MT-200 package Ў¤ Complement to type 2SA1215 APPLICATIONS Ў¤ Audio and general purpose PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg Collector-base voltage PARAMETER Collector-emitter voltage INC Emitter-base voltage Collector current E SEM ANG H TC=25Ўж Open emitter Open base OND IC CONDITIONS TOR UC VALUE 160 160 5 15 4 150 150 -55~150 UNIT V V V A A W Ўж Ўж Open collector Base current Collector power dissipation Junction temperature Storage temperature

See also transistors datasheet: 2SC2913 , 2SC2914 , 2SC2915 , 2SC2917 , 2SC2918 , 2SC292 , 2SC2920 , 2SC2921 , AC127 , 2SC2923 , 2SC2924 , 2SC2925 , 2SC2926 , 2SC2927 , 2SC2928 , 2SC2929 , 2SC292S .

Keywords

 2SC2922 Datasheet  2SC2922 Datenblatt  2SC2922 RoHS  2SC2922 Distributor
 2SC2922 Application Notes  2SC2922 Component  2SC2922 Circuit  2SC2922 Schematic
 2SC2922 Equivalent  2SC2922 Cross Reference  2SC2922 Data Sheet  2SC2922 Fiche Technique

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