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2SC2922
  2SC2922
  2SC2922
 
2SC2922
  2SC2922
  2SC2922
 
2SC2922
  2SC2922
 
 
List
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
2SC2922 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SC2922 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC2922

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 200

Maximum collector-base voltage |Ucb|, V: 180

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 17

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 25

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 33

Noise Figure, dB: -

Package of 2SC2922 transistor: XM20

2SC2922 Equivalent Transistors - Cross-Reference Search

2SC2922 PDF doc:

1.1. 2sc2922.pdf Size:28K _sanken-ele

2SC2922
2SC2922
LAPT 2SC2922 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1216) Application : Audio and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol Ratings Symbol Conditions Ratings Unit Unit 0.2 6.0 0.3 36.4 VCBO 180 ICBO VCB=180V 100max A V 0.2 24.4 2.1 0.1 VCEO 180 IEBO VEB=5V 100max A 2-o3.2 V 9 VEBO 5 V(BR)CEO IC=25mA 180min V V IC 17 hFE VCE=4V, IC=8V 30min? A a IB 5 VCE(sat) IC=8A, IB=0.8A 2.0max V b A fT PC 200(Tc=25C) VCE=12V, IE=2A 50typ MHz W 2 COB Tj 150 VCB=10V, f=1MHz 250typ pF C 3 0.65+0.2 -0.1 Tstg 55 to +150 1.05+0.2 C ? hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180) -0.1 +0.3 3.0 -0.1 0.1 0.1 5.45 5.45 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 18.4g VCC RL IC VB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (A) (A) ( s) ( s) ( s) a. Part No. b. Lot No. 40 4 10 5 1 1 0.2typ 1.3typ 0

1.2. 2sc2922.pdf Size:165K _inchange_semiconductor

2SC2922
2SC2922
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2922 DESCRIPTION Ў¤ With MT-200 package Ў¤ Complement to type 2SA1216 APPLICATIONS Ў¤ Audio and general purpose PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg Collector-base voltage PARAMETER Collector-emitter voltage INC Emitter-base voltage Collector current E SEM ANG H TC=25Ўж Open emitter Open base OND IC CONDITIONS TOR UC VALUE 180 180 5 17 5 200 150 -55~150 UNIT V V V A A W Ўж Ўж Open collector Base current Collector power dissipation Junction temperature Storage temperature

4.1. 2sc2925_e.pdf Size:40K _panasonic

2SC2922
2SC2922
Transistor 2SC2925 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to emitter voltage VCEO 50 V 1.27 1.27 Emitter to base voltage VEBO 15 V Peak collector current ICP 1.5 A 1:Emitter 1 2 3 Collector current IC 0.7 A 2:Collector 3:Base Collector power dissipation PC 750 mW 2.54 0.15 JEDEC:TO92 Junction temperature Tj 150 ?C EIAJ:SC43A Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 20V, IE = 0 1 A Collector cutoff current ICEO VCE = 20V, IB = 0 10 A Collector to base voltage VCBO IC = 10 A, IE = 0 60 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 50 V Emitter to ba

4.2. 2sc2925.pdf Size:77K _panasonic

2SC2922
2SC2922
Transistors 2SC2925 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 5.00.2 4.00.2 Features High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) 0.70.1 Absolute Maximum Ratings Ta = 25C Parameter Symbol Rating Unit 0.45+0.15 0.45+0.15 0.1 0.1 Collector-base voltage (Emitter open) VCBO 60 V 2.5+0.6 2.5+0.6 0.2 0.2 Collector-emitter voltage (Base open) VCEO 50 V 1: Emitter Emitter-base voltage (Collector open) VEBO 15 V 1 2 3 2: Collector Collector current IC 0.7 A 3: Base EIAJ: SC-43A Peak collector current ICP 1.5 A TO-92-B1 Package Collector power dissipation PC 750 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Electrical Characteristics Ta = 25C 3C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 A, IE = 060V Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 050 V Emitter-base

4.3. 2sc2928.pdf Size:42K _hitachi

2SC2922
2SC2922

4.4. 2sc2929.pdf Size:105K _no

2SC2922
2SC2922

4.5. 2sc2921.pdf Size:27K _sanken-ele

2SC2922
2SC2922
LAPT 2SC2921 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1215) Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-200 Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 6.0 0.3 36.4 VCBO 160 V ICBO VCB=160V 100max A 0.2 24.4 2.1 VCEO 160 V VEB=5V 100max A 2-o3.2 IEBO 0.1 9 VEBO 5 V IC=25mA 160min V V(BR)CEO IC hFE VCE=4V, IC=5A 50min? 15 A a IB VCE(sat) IC=5A, IB=0.5A 2.0max V b 4 A PC fT VCE=12V, IE=2A 60typ MHz 150(Tc=25C) W 2 Tj COB VCB=10V, f=1MHz 200typ pF 150 C 3 0.65+0.2 -0.1 Tstg 55 to +150 C ? hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05+0.2 -0.1 +0.3 3.0 -0.1 0.1 0.1 5.45 5.45 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 18.4g VCC RL IC VB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (mA) (mA) ( s) ( s) ( s) a. Part No. b. Lot No. 60 12 5 5 500 500 0.2typ 1.5typ 0.35typ ICVC

4.6. 2sc2927.pdf Size:56K _inchange_semiconductor

2SC2922
2SC2922
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2927 DESCRIPTION ·With TO-220 package ·High collector-emitter voltage : VCEO=300V ·High frequency:fT=40MHz(Min) APPLICATIONS ·For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 0.2 A PT Collector power dissipation TC=25? 10 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2927 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

4.7. 2sc2928.pdf Size:130K _inchange_semiconductor

2SC2922
2SC2922
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2928 DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·For high voltage,high speed and high power switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(TC=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 5 A ICM Collector current-peak 7 A IB Base current 2.5 A PC Collector power dissipation TC=25? 80 W Junction temperature 150 ? Tj Storage temperature -45~150 ? Tstg Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2928 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown

4.8. 2sc2929.pdf Size:269K _inchange_semiconductor

2SC2922
2SC2922
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2929 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VCEO(SUS) Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 3 A IBB Base Current-Continuous 1 A Collector Power Dissipation PC @ TC=25? 40 W TJ Junction Temperature 150 ? Storage Temperature Range -45~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 3.0 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transi

4.9. 2sc2920.pdf Size:128K _inchange_semiconductor

2SC2922
2SC2922
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2920 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(TC=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 450 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 15 A PC Collector power dissipation TC=25? 150 W Junction temperature 150 ? Tj Storage temperature -55~150 ? Tstg Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2920 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=? 400 V

4.10. 2sc2923.pdf Size:109K _inchange_semiconductor

2SC2922
2SC2922
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2923 DESCRIPTION Ў¤ With TO-202 package Ў¤ High VCEO Ў¤ Low COB APPLICATIONS Ў¤ For color TV chroma output applications PINNING(See Fig.2) PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-202) and symbol DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM Collector-base voltage PARAMETER CHA IN Collector current Collector-emitter voltage Emitter-base voltage ES NG Open emitter Open base MIC E CONDITIONS OND TOR UC VALUE 300 300 7 0.1 0.2 UNIT V V V A A Open collector Collector current-peak Ta=25Ўж 1.4 W 15 150 -55~150 Ўж Ўж PC Collector power dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature

4.11. 2sc2921.pdf Size:163K _inchange_semiconductor

2SC2922
2SC2922
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2921 DESCRIPTION Ў¤ With MT-200 package Ў¤ Complement to type 2SA1215 APPLICATIONS Ў¤ Audio and general purpose PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg Collector-base voltage PARAMETER Collector-emitter voltage INC Emitter-base voltage Collector current E SEM ANG H TC=25Ўж Open emitter Open base OND IC CONDITIONS TOR UC VALUE 160 160 5 15 4 150 150 -55~150 UNIT V V V A A W Ўж Ўж Open collector Base current Collector power dissipation Junction temperature Storage temperature

See also transistors datasheet: 2SC2913 , 2SC2914 , 2SC2915 , 2SC2917 , 2SC2918 , 2SC292 , 2SC2920 , 2SC2921 , AC127 , 2SC2923 , 2SC2924 , 2SC2925 , 2SC2926 , 2SC2927 , 2SC2928 , 2SC2929 , 2SC292S .

Keywords

 2SC2922 Datasheet  2SC2922 Datenblatt  2SC2922 RoHS  2SC2922 Distributor
 2SC2922 Application Notes  2SC2922 Component  2SC2922 Circuit  2SC2922 Schematic
 2SC2922 Equivalent  2SC2922 Cross Reference  2SC2922 Data Sheet  2SC2922 Fiche Technique

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