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2SC2992 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC2992

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 11

Maximum collector-base voltage |Ucb|, V: 36

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 1.5

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 235

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of 2SC2992 transistor: XM5

2SC2992 Equivalent Transistors - Cross-Reference Search

2SC2992 PDF document for downloads:

4.1. 2sc2995.pdf Size:510K _toshiba

2SC2995 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2995 FM/AM RF, MIX, OSC, IF Unit: mm High Frequency Amplifier Applications • High stability oscillation voltage on FM local oscillator. • Recommend FM/AM RF, MIX, OSC and IF. Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 4 V Collector current IC 50 mA Base current IB 10 mA Collector power dissipation PC 200 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C JEDEC ? JEITA ? TOSHIBA 2-4E1A Weight: 0.13 g (typ.) Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 40 V, IE = 0 ? ? 0.1 µA Emitter cut-off current IEBO VEB = 4 V, IC = 0 ? ? 0.5 µA hFE DC current gain VCE = 6 V, IC = 1 mA 40 ? 240 (Note) Reverse transfer capacitance Cre VCE = 6 V,

4.2. 2sc2996.pdf Size:507K _toshiba

2SC2996 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2996 FM/AM RF, MIX, Local, IF Unit: mm High Frequency Amplifier Applications • High stability oscillation voltage on FM local oscillator • Recommend FM/AM RF, MIX, local and IF Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 4 V Collector current IC 50 mA Emitter current IE -50 mA Collector power dissipation PC 150 wW Junction temperature Tj 125 °C JEDEC TO-236 Storage temperature range Tstg -55~125 °C JEITA ? TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 40 V, IE = 0 ? ? 0.1 µA Emitter cut-off current IEBO VEB = 4 V, IC = 0 ? ? 0.5 µA hFE DC current gain VCE = 6 V, IC = 1 mA 40 ? 240 (Note) Reverse transfer capacitance Cre

4.3. 2sc2999.pdf Size:189K _sanyo

Ordering number:EN931D NPN Epitaxial Planar Silicon Transistor 2SC2999 HF Amplifier Applications Features Package Dimensions · FBET series. unit:mm · Very small-sized package permitting sets to be small- 2033 sized and slim. [2SC2999] · High fT (fT=750MHz typ.) and small Cre (Cre=0.6pF typ). B : Base C : Collector E : Emitter SANYO : SPA Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 25 V Collector-to-Emitter Voltage VCEO 20 V Emitter-to-Base Voltage VEBO 3 V Collector Current IC 30 mA Collector Dissipation PC 150 mW Junction Temperature Tj 125 ?C Storage Temperature Tstg –40 to +125 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0 0.1 µA Emitter Cutoff Current IEBO VEB=3V, IC=0 0.1 µA DC Current Gain hFE VCE=6V, IC=1mA 40* 200* Gain-Bandwidth Product fT VCE=6V, IC=4mA 450 750 MHz R

4.4. 2sc2999.pdf Size:341K _lge

2SC2999 TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 3. BASE 1 2 3 Features High fT(fT=750MHZ typ) and small Cre (Cre=0.6pF typ) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3 V IC Collector Current -Continuous 30 mA PC Collector Power Dissipation 400 mW TJ Junction Temperature 125 ? Tstg Storage Temperature -40-125 ? Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (TA=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100?A, IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=100?A,IC=0 3 V Collector cut-off current ICBO VCB=10V, IE=0 0.1 ?A Emitter cut-off current IEBO VEB=3V,IC=0 0.1 ?A DC current gain hFE VCE=6V, IC=1mA 40 200 Transition frequen

See also transistors datasheet: 2SC2986-Y , 2SC2987 , 2SC2987A , 2SC2988 , 2SC2989 , 2SC298S , 2SC299 , 2SC2991 , RCA1001 , 2SC2995 , 2SC2995-O , 2SC2995-R , 2SC2995-Y , 2SC2996 , 2SC2996-O , 2SC2996-R , 2SC2996-Y .

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