2N1958 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N1958

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.6

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.5

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF: 18

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of 2N1958 transistor: TO5

2N1958 Equivalent Transistors - Cross-Reference Search

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See also transistors datasheet: 2N1950 , 2N1951 , 2N1952 , 2N1953 , 2N1954 , 2N1955 , 2N1956 , 2N1957 , BC148 , 2N1958-18 , 2N1958A , 2N1959 , 2N1959A , 2N196 , 2N1960 , 2N1960-46 , 2N1961 .

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