2N1969
Transistor Datasheet. Parameters and Characteristics. Type Designator: 2N1969
Material of transistor: Ge
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.15
Maximum collector-base voltage |Ucb|, V: 30
Maximum collector-emitter voltage |Uce|, V: 15
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 0.4
Maximum junction temperature (Tj), °C: 85
Transition frequency (ft), MHz: 10
Collector capacitance (Cc), pF: 20
Forward current transfer ratio (hFE), min: 50
Noise Figure, dB: - Package of 2N1969
transistor: TO5
2N1969
Equivalent Transistors - Cross-Reference Search 2N1969
PDF doc:NO PDF! See also transistors datasheet: 2N1963-46
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, 2N1964-46
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Datasheet | 2N1969
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