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2SC3355 Transistor (IC) Datasheet. Cross Reference Search. 2SC3355 Equivalent

Type Designator: 2SC3355

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.6

Maximum collector-base voltage |Ucb|, V: 20

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.1

Maksimalna temperatura (Tj), °C: 125

Transition frequency (ft), MHz: 6500

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 35

Noise Figure, dB: -

Package of 2SC3355 transistor: TO92

2SC3355 Transistor Equivalent Substitute - Cross-Reference Search

2SC3355 PDF:

1.1. 2sc3355.pdf Size:84K _nec

2SC3355
2SC3355

DATA SHEET NPN SILICON RF TRANSISTOR 2SC3355 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic. FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @ VCE = 10 V,

1.2. ne856_2sc5011_2sc5006_2sc4226_2sc3355_2sc3603_2sc3356_2sc3357_2sc3603_2sc4093.pdf Size:257K _nec

2SC3355
2SC3355

NEC's NPN SILICON HIGH NE856 FREQUENCY TRANSISTOR SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 (MICRO-X) 00 (CHIP) • LOW COST DESCRIPTION NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications. Low noise

1.3. 2sc3355.pdf Size:71K _utc

2SC3355
2SC3355

UNISONIC TECHNOLOGIES CO., LTD 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER ? FEATURES 1 * Low Noise and High Gain * High Power Gain TO-92 ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC3355L-T92-B 2SC3355G-T92-B TO-92 B E C Tape Box 2SC3355L-T92-K 2SC3355G-T92-K TO-92 B E C Bulk Note: P

1.4. 2sc3355.pdf Size:310K _inchange_semiconductor

2SC3355
2SC3355

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3355 DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz ·High Power Gain MAG = 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz APPLICATIONS ·Designed for low noi

See also transistors datasheet: 2SC3348 , 2SC3349 , 2SC335 , 2SC3350 , 2SC3351 , 2SC3352 , 2SC3353 , 2SC3354 , 2SC1815 , 2SC3356 , 2SC3357 , 2SC3358 , 2SC3359 , 2SC336 , 2SC3360 , 2SC3361 , 2SC3361S4 .

Search Terms:

 2SC3355 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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