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2SC3356 Transistor (IC) Datasheet. Cross Reference Search. 2SC3356 Equivalent

Type Designator: 2SC3356

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 20

Maximum collector-emitter voltage |Uce|, V:

Maximum emitter-base voltage |Ueb|, V:

Maximum collector current |Ic max|, A: 0.1

Maksimalna temperatura (Tj), °C: 125

Transition frequency (ft), MHz: 7000

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of 2SC3356 transistor: TO236

2SC3356 Transistor Equivalent Substitute - Cross-Reference Search

2SC3356 PDF:

1.1. ne856_2sc5011_2sc5006_2sc4226_2sc3355_2sc3603_2sc3356_2sc3357_2sc3603_2sc4093.pdf Size:257K _nec

2SC3356
2SC3356

NEC's NPN SILICON HIGH NE856 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz LOW NOISE FIGURE: 1.1 dB at 1 GHz HIGH COLLECTOR CURRENT: 100 mA HIGH RELIABILITY METALLIZATION 35 (MICRO-X) 00 (CHIP) LOW COST DESCRIPTION NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications. Low noise

1.2. 2sc3356.pdf Size:91K _nec

2SC3356
2SC3356

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS The 2SC3356 is an NPN silicon epitaxial transistor designed for low (Units: mm) noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 2.80.2 1.5 0.65+0.1 -0.15 FEATURES Low Noise and High Gain 2

1.3. 2sc3356.pdf Size:242K _utc

2SC3356
2SC3356

UNISONIC TECHNOLOGIES CO., LTD 2SC3356 NPN SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER DESCRIPTION The UTC 2SC3356 is designed for such applications as: DC/DC converters, supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage applications (e.g. lamps and LEDs) and inductive load driver (e.g. relays, buzzers and motors)

1.4. 2sc3356.pdf Size:232K _inchange_semiconductor

2SC3356
2SC3356

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3356 DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ·High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz APPLICATIONS ·Designed for low noise amplifier at VHF, UHF and CATV band. ABSOLUTE MAXIMUM RATINGS(Ta=25

1.5. 2sc3356.pdf Size:97K _htsemi

2SC3356
2SC3356

2SC3356 TRANSISTOR (NPN) FEATURES SOT-23-3L Power dissipation 1. BASE 2. EMITTER PCM: 0.2 W (Tamb=25?) 3. COLLECTOR Collector current ICM: 0.1 A 2. 80? A0. 05 1. 60? A0. 05 Collector-base voltage V(BR)CBO: 20 V Operating and storage junction temperature range TJ, Tstg: -55? to +150? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Paramet

1.6. 2sc3356.pdf Size:277K _gsme

2SC3356
2SC3356

? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM3356 MAXIMUM RATINGS ¦MAXIMUM RATINGS ????? MAXIMUM RATINGS Characteristic Symbol Rating Unit ???? ?? ??? ?? Collector-Emitter Voltage VCEO 12 Vdc ???????? Collector-Base Voltage VCBO 20 Vdc ??????? Emitter-Base Voltage VEBO 3.0 Vd

1.7. 2sc3356_sot-23-3l.pdf Size:218K _lge

2SC3356
2SC3356

2SC3356 SOT-23-3L Transistor(NPN) SOT-23-3L 1. BASE 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features 2.80 1.60 Low noise amplifier at VHF, UHF and CATV band. Low Noise and High Gain High Power Gain 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage 20 V VCEO Co

1.8. 2sc3356.pdf Size:218K _lge

2SC3356
2SC3356

2SC3356 SOT-23-3L Transistor(NPN) SOT-23-3L 1. BASE 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features 2.80 1.60 Low noise amplifier at VHF, UHF and CATV band. Low Noise and High Gain High Power Gain 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage 20 V VCEO Co

1.9. 2sc3356.pdf Size:402K _wietron

2SC3356
2SC3356

2SC3356 High-Frequency Amplifier Transistor 3 NPN Silicon 1 P b Lead(Pb)-Free 2 FEATURES 1. BASE * Low noise amplifier at VHF, UHF and CATV band. 2. EMITTER 3. COLLECTOR * Low Noise and High Gain * High Power Gain SOT-23 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-

1.10. 2sc3356w.pdf Size:656K _blue-rocket-elect

2SC3356
2SC3356

2SC3356W(BR3DG3356W) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-323 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-323 Plastic Package. 特征 / Features 低噪声和高功率增益。 Low noise and high power gain. 用途 / Applications 用于甚高频、超高频和有线电视频段的低噪声放大。 low noise amplifier at VHF, UHF and C

1.11. l2sc3356lt1g.pdf Size:140K _lrc

2SC3356
2SC3356

DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356LT1G DESCRIPTION The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for S-L2SC3356LT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab

1.12. l2sc3356wt1g.pdf Size:167K _lrc

2SC3356
2SC3356

DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356WT1G The L2SC3356WT1is an NPN silicon epitaxial transistor designed for S-L2SC3356WT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

1.13. 2sc3356.pdf Size:1256K _kexin

2SC3356
2SC3356

SMD Type Transistors SMD Type NPN Transistors 2SC3356 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz 1 2 High power gain. +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz 1.Base 2.Emitter 3.collector Absolute Maximum Rating

See also transistors datasheet: 2SC3349 , 2SC335 , 2SC3350 , 2SC3351 , 2SC3352 , 2SC3353 , 2SC3354 , 2SC3355 , 2N60C , 2SC3357 , 2SC3358 , 2SC3359 , 2SC336 , 2SC3360 , 2SC3361 , 2SC3361S4 , 2SC3361S5 .

Search Terms:

 2SC3356 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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