All Transistors Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
2SC3356
  2SC3356
  2SC3356
 
2SC3356
  2SC3356
  2SC3356
 
2SC3356
  2SC3356
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU526A/6
BU526A/7 .. BUL742C
BUL74A .. BUV47
BUV47A .. BUX83/9
BUX84 .. C945
C945LT1 .. CENW45
CF103 .. CJD47
CJD50 .. CMPTA63
CMPTA64 .. CS9018
CS9018D .. CSC1047
CSC1047B .. CSD1638
CSD1733 .. D11C1051
D11C1053 .. D39J6
D39J7 .. D45C4
D45C5 .. DMB2227A
DMJT9435 .. DTA123JUB
DTA123Y .. DTC143ZE
DTC143ZEA .. DZTA42
DZTA92 .. ECG361
ECG362 .. ESM138
ESM139 .. FC106
FC107 .. FJV4108R
FJV4109R .. FMMT5131
FMMT5132 .. FT4024
FT4025 .. GC181A
GC189 .. GES4926
GES4927 .. GI3638A
GI3641 .. GT3110A-2
GT311A .. HA7633
HA7723 .. HN2A26FS
HN2C01FE .. IDA1146
IDA1263 .. JE5401A
JE5401B .. KGS1002
KGS1003 .. KRA733F
KRA733U .. KRC668U
KRC669E .. KSA709-G
KSA709-O .. KSC2690A
KSC2690A-O .. KSD261-O
KSD261-R .. KSR2112
KSR2113 .. KT315N
KT315N-1 .. KT6111V
KT6112A .. KT8130A
KT8130B .. KT855V
KT856A .. KTA1807L
KTA1834D .. KTC9013
KTC9013S .. MA4103
MA4104 .. MH8211
MH8212 .. MJB44H11
MJB45H11 .. MJE4342
MJE4343 .. MM4209
MM4209A .. MMBT4965
MMBT5087L .. MMUN2215
MMUN2215L .. MP4052
MP4053 .. MPQ5858
MPQ5910 .. MPS929
MPS929A .. MRF455
MRF458 .. NA01F
NA01FG .. NB011HJ
NB011HK .. NB211EG
NB211EH .. NESG2021M16
NESG2030M04 .. NPS3903R
NPS3904 .. NSS60200LT1G
NSS60201LT1G .. OC480
OC480K .. PBSS4021PT
PBSS4032ND .. PEMD18
PEMD19 .. PN4403
PN4888 .. Q-00269A
Q-00369C .. RN1317
RN1318 .. RN2411
RN2412 .. RT657M
RT679M .. SD409
SD410 .. SGS911
SGS912 .. SRA2203S
SRA2203SF .. STB13007DT4
STB205L .. SUT465N
SUT466N .. TA1763
TA1763A .. TI814
TI815 .. TIPL757
TIPL757A .. TN3444
TN3467 .. TP4889
TP4890 .. UMH13N
UMH15N .. UN6218
UN6219 .. ZT1702
ZT1708 .. ZTX3701L
ZTX3701M .. ZXTN649F
ZXTNS618MC .. ZXTPS720MC
 
2SC3356 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SC3356 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC3356

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 20

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.1

Maksimalna temperatura (Tj), °C: 125

Transition frequency (ft), MHz: 7000

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of 2SC3356 transistor: TO236

2SC3356 Equivalent Transistors - Cross-Reference Search

2SC3356 PDF doc:

1.1. ne856_2sc5011_2sc5006_2sc4226_2sc3355_2sc3603_2sc3356_2sc3357_2sc3603_2sc4093.pdf Size:257K _nec

2SC3356
2SC3356
NEC's NPN SILICON HIGH NE856 FREQUENCY TRANSISTOR SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 (MICRO-X) 00 (CHIP) • LOW COST DESCRIPTION NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications. Low noise figures, high gain, and high current capability equate to 32 (TO-92) 34 (SOT 89 STYLE) wide dynamic range and excellent linearity. The NE856 series offers excellent performance and reliability at low cost. This is achieved by NEC's titanium/platinum/gold metallization sys- tem and their direct nitride passivated base surface process. The NE856 series is available in chip form and a Micro-x package for high frequency applications. It is also available in several low cost plastic package styles. 19 (3 PIN ULTRA SUPER 18 (SOT 343 STYLE) MINI MOLD) NE85600 NOISE FIGURE AND GAIN vs.

1.2. 2sc3356.pdf Size:91K _nec

2SC3356
2SC3356
DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS The 2SC3356 is an NPN silicon epitaxial transistor designed for low (Units: mm) noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 2.8±0.2 1.5 0.65+0.1 -0.15 FEATURES • Low Noise and High Gain 2 NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz • High Power Gain 3 1 MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VCBO 20 V Marking Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3.0 V Collector Current IC 100 mA Total Power Dissipation PT 200 mW PIN CONNECTIONS Junction Temperature Tj 150 C 1. Emitter Storage Temperature Tstg 65 to +150 C 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS

1.3. 2sc3356.pdf Size:242K _utc

2SC3356
2SC3356
UNISONIC TECHNOLOGIES CO., LTD 2SC3356 NPN SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER DESCRIPTION The UTC 2SC3356 is designed for such applications as: DC/DC converters, supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage applications (e.g. lamps and LEDs) and inductive load driver (e.g. relays, buzzers and motors). FEATURES * Low Noise and High Gain * High Power Gain ORDERING INFORMATION Ordering Number Pin Description Package Packing Lead Free 1 2 3 2SC3356L-x-AE3-R SOT-23 E B C Tape Reel MARKING www.unisonic.com.tw 1 of 4 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R206-024,E 2SC3356 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage BVCBO 20 V Collector to Emitter Voltage BVCEO 12 V Emitter to Base Voltage BVEBO 3 V Collector Current IC 100 mA Power Dissipation PD 200 mW Junction Temperature TJ 150 Â

1.4. 2sc3356.pdf Size:232K _inchange_semiconductor

2SC3356
2SC3356
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3356 DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ·High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz APPLICATIONS ·Designed for low noise amplifier at VHF, UHF and CATV band. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous 0.1 A Collector Power Dissipation PC @TC=25? 0.2 W TJ Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3356 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 10V; IE= 0 1.0 ?A IEBO

1.5. 2sc3356.pdf Size:97K _htsemi

2SC3356
2SC3356
2SC3356 TRANSISTOR (NPN) FEATURES SOT-23-3L Power dissipation 1. BASE 2. EMITTER PCM: 0.2 W (Tamb=25?) 3. COLLECTOR Collector current ICM: 0.1 A 2. 80? A0. 05 1. 60? A0. 05 Collector-base voltage V(BR)CBO: 20 V Operating and storage junction temperature range TJ, Tstg: -55? to +150? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V 20 V (BR)CBO Ic=10µA, I =0 E Collector-emitter breakdown voltage V Ic= 1mA, I =0 12 V (BR)CEO B Emitter-base breakdown voltage V 3 V (BR)EBO I = 10µA, I =0 E C Collector cut-off current I V = 10 V, I =0 1 CBO CB E µA Emitter cut-off current I V = 1V , I =0 1 EBO EB C µA DC current gain hFE VCE= 10V, IC= 20mA 50 300 V =10V, I = 20mA 6 GHz Transition frequency f CE C T Noise figure NF V =10V, I = 7mA, f = 1GHz 2 dB CE C CLASSIFICATION OF hFE Marking R23 R24 R25 Rank Q R S Range 50-100

1.6. 2sc3356.pdf Size:277K _gsme

2SC3356
2SC3356
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM3356 MAXIMUM RATINGS ¦MAXIMUM RATINGS ????? MAXIMUM RATINGS Characteristic Symbol Rating Unit ???? ?? ??? ?? Collector-Emitter Voltage VCEO 12 Vdc ???????? Collector-Base Voltage VCBO 20 Vdc ??????? Emitter-Base Voltage VEBO 3.0 Vdc ??????? Collector Current-Continuous Ic 100 mAdc ?????-?? THERMAL CHARACTERISTICS ¦THERMAL CHARACTERISTICS ??? THERMAL CHARACTERISTICS Characteristic Symbol Max Unit ?? ???? ?? ??? PD Total Device Dissipation ????? 225 mW FR-5 Board(1) TA=25?????? 25? 1.8 mW/? Derate above25? ?? 25??? PD Total Device Dissipation ????? 300 mW Alumina Substrate ?????,(2)TA=25? Derate above25??? 25??? 2.4 mW/? Thermal Resistance Junction to Ambient R ?JA 417 ?/W ?? Junction and Storage Temperature TJ,Tstg -55to+150? ??????? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING GM335

1.7. 2sc3356_sot-23-3l.pdf Size:218K _lge

2SC3356
2SC3356
2SC3356 SOT-23-3L Transistor(NPN) SOT-23-3L 1. BASE 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features 2.80 1.60 Low noise amplifier at VHF, UHF and CATV band. Low Noise and High Gain High Power Gain 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.25 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 20 V IC=10?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 12 V Collector cut-off current ICBO VCB=10V, IE=0 1 ?A Emitter cut-off current IEBO VEB=1V, IC=0 1 ?A DC current gain hFE* VCE=10V, IC= 20m

1.8. 2sc3356.pdf Size:218K _lge

2SC3356
2SC3356
2SC3356 SOT-23-3L Transistor(NPN) SOT-23-3L 1. BASE 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features 2.80 1.60 Low noise amplifier at VHF, UHF and CATV band. Low Noise and High Gain High Power Gain 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.25 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 20 V IC=10?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 12 V Collector cut-off current ICBO VCB=10V, IE=0 1 ?A Emitter cut-off current IEBO VEB=1V, IC=0 1 ?A DC current gain hFE* VCE=10V, IC= 20m

1.9. 2sc3356.pdf Size:402K _wietron

2SC3356
2SC3356
2SC3356 High-Frequency Amplifier Transistor 3 NPN Silicon 1 P b Lead(Pb)-Free 2 FEATURES 1. BASE * Low noise amplifier at VHF, UHF and CATV band. 2. EMITTER 3. COLLECTOR * Low Noise and High Gain * High Power Gain SOT-23 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.25 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 20 V IC=10?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 12 V Collector-emitter breakdown voltage VCE(sat) IC= 50mA, IB=5mA 200 mV Collector cut-off current ICBO VCB=10V, IE=0 1 ?A Emitter cut-off current IEBO VEB=1V, IC=0 1 ?A DC current gain hFE

See also transistors datasheet: 2SC3349 , 2SC335 , 2SC3350 , 2SC3351 , 2SC3352 , 2SC3353 , 2SC3354 , 2SC3355 , 2N60C , 2SC3357 , 2SC3358 , 2SC3359 , 2SC336 , 2SC3360 , 2SC3361 , 2SC3361-S4 , 2SC3361-S5 .

Keywords

 2SC3356 Datasheet  2SC3356 Datenblatt  2SC3356 RoHS  2SC3356 Distributor
 2SC3356 Application Notes  2SC3356 Component  2SC3356 Circuit  2SC3356 Schematic
 2SC3356 Equivalent  2SC3356 Cross Reference  2SC3356 Data Sheet  2SC3356 Fiche Technique

(C) 2005 All Right reserved Bipolar | | MOSFET | | IGBT | | Manufacturer Sites | | SMD Code | | Packages | | Contact alltransistors[@]gmail.com