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2SC3551 Transistor (IC) Datasheet. Cross Reference Search. 2SC3551 Equivalent

Type Designator: 2SC3551

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 80

Maximum collector-base voltage |Ucb|, V: 900

Maximum collector-emitter voltage |Uce|, V:

Maximum emitter-base voltage |Ueb|, V:

Maximum collector current |Ic max|, A: 5

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 35

Noise Figure, dB: -

Package of 2SC3551 transistor: TO218

2SC3551 Transistor Equivalent Substitute - Cross-Reference Search

2SC3551 PDF:

1.1. 2sc3551.pdf Size:232K _inchange_semiconductor

2SC3551
2SC3551

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3551 DESCRIPTION ·With TO-3PN package ·High voltage ,high speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fi

4.1. 2sc3552.pdf Size:120K _sanyo

2SC3551
2SC3551

Ordering number:EN1597C NPN Triple Diffused Planar Silicon Transistor 2SC3552 800V/12A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit:mm Fast switching speed (tf : 0.1 s typ). 2022A Wide ASO. [2SC3552] Adoption of MBIT process. 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Specifications Absolute Maxi

4.2. 2sc3554.pdf Size:195K _nec

2SC3551
2SC3551

4.3. 2sc3553.pdf Size:23K _hitachi

2SC3551
2SC3551

2SC3553 Silicon NPN Epitaxial Application Low frequency amplifier Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SC3553 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 4V Collector current IC 500 mA Collector power dissipation PC 300 mW Junction temperatur

4.4. 2sc3552.pdf Size:80K _wingshing

2SC3551
2SC3551

Silicon Epitaxial Planar Transistor 2SC3552 GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose MT-100 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value V = 0V BE V - 1100 V CESM Collector-emitter voltage (open base) V - 500 V CEO Collector cur

4.5. 2sc3550.pdf Size:261K _inchange_semiconductor

2SC3551
2SC3551

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3550 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL P

4.6. 2sc3559.pdf Size:123K _inchange_semiconductor

2SC3551
2SC3551

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3559 DESCRIPTION · ·With TO-220Fa package ·High breakdown voltage ·High speed switching APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symb

4.7. 2sc3552.pdf Size:107K _inchange_semiconductor

2SC3551
2SC3551

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3552 DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VE

4.8. 2sc3557.pdf Size:55K _inchange_semiconductor

2SC3551
2SC3551

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3557 DESCRIPTION · ·With TO-220C package ·Low collector saturation voltage APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE

4.9. 2sc3554.pdf Size:1100K _kexin

2SC3551
2SC3551

SMD Type Transistors NPN Transistors 2SC3554 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=200mA ● Collector Emitter Voltage VCEO=300V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 300 V Emitter - Base Voltag

See also transistors datasheet: 2SC3546 , 2SC3547 , 2SC3547A , 2SC3547B , 2SC3548 , 2SC3549 , 2SC355 , 2SC3550 , BD679 , 2SC3552 , 2SC3552N , 2SC3552O , 2SC3552R , 2SC3553 , 2SC3554 , 2SC3555 , 2SC3556 .

Search Terms:

 2SC3551 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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