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2SC3551
  2SC3551
  2SC3551
 
2SC3551
  2SC3551
  2SC3551
 
2SC3551
  2SC3551
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU912
BU920 .. BUP39
BUP40 .. BUV98V
BUW11 .. BUY21A
BUY22 .. CCN83
CCS2001 .. CFD2374Q
CFD2375 .. CK28A
CK398 .. CP404
CP405 .. CSA1267Y
CSA1293 .. CSC1684R
CSC1684S .. CSD669A
CSD669AB .. D24A3900A
D26B1 .. D40E4
D40E5 .. D56W2
D6 .. DPLS350E
DPLS350Y .. DTA143XE
DTA143XEA .. DTD113ES
DTD113Z .. ECG13
ECG130 .. ECG482
ECG483 .. ESM3030DV
ESM3045AV .. FCS9018E
FCS9018F .. FJY3009R
FJY3010R .. FMMT6517
FMMT6520 .. FX2369
FX2369A .. GC522
GC522K .. GES5551
GES5551R .. GS-H9033
GS-H9033D .. GT338B
GT338V .. HDA412
HDA420 .. HS5308
HS5810 .. IDD525
IDD526 .. JE9100C
JE9100D .. KRA102
KRA102M .. KRA763U
KRA764E .. KRC836E
KRC836U .. KSB1098-O
KSB1098-R .. KSC2787-R
KSC2787-Y .. KSD5064
KSD5065 .. KST92
KST93 .. KT3198V
KT321A .. KT6134B
KT6134V .. KT814A9
KT814B .. KT897A
KT897B .. KTB1424
KTB1772 .. KTD3055
KTD525 .. MC142
MC150 .. MJ10042
MJ10044 .. MJD350T4
MJD41C .. MJE5851
MJE5852 .. MM869B
MMBA811C5 .. MMBT589
MMBT589L .. MP110B-B
MP110B-G .. MP504A
MP505 .. MPS2925
MPS2926 .. MPSH02
MPSH04 .. MRF905
MRF912 .. NA11HX
NA11HY .. NB013FU
NB013FV .. NB212FY
NB212H .. NKT124
NKT12429 .. NPS5141
NPS5142 .. NTE172A
NTE176 .. OC815
OC816 .. PBSS5160V
PBSS5220T .. PIMD3
PIMH9 .. PN918
PN918R .. RCA1A05
RCA1A06 .. RN1605
RN1606 .. RN2710
RN2710JE .. S15649
S1619 .. SDT9204
SDT9205 .. SGSIF444
SGSIF445 .. SRA2212EF
SRA2212M .. STC5084
STC5085 .. SZD1060
SZD1181 .. TA2470
TA2492 .. TIP140T
TIP141 .. TIS37
TIS38 .. TN4036
TN4037 .. TP929
TP929A .. UN1066
UN1110Q .. UN9218
UN9219 .. ZT403
ZT403P .. ZTX4402L
ZTX4402M .. ZXTP5401FL
ZXTP5401G .. ZXTPS720MC
 
2SC3551 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SC3551 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC3551

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 80

Maximum collector-base voltage |Ucb|, V: 900

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 5

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 35

Noise Figure, dB: -

Package of 2SC3551 transistor: TO218

2SC3551 Equivalent Transistors - Cross-Reference Search

2SC3551 PDF doc:

1.1. 2sc3551.pdf Size:232K _inchange_semiconductor

2SC3551
2SC3551
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3551 DESCRIPTION ·With TO-3PN package ·High voltage ,high speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 5 A IB Base current 3 A PC Collector power dissipation TC=25? 80 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction case 1.5 ?/W Inchange Semiconductor Product Specification Silicon NPN

4.1. 2sc3552.pdf Size:120K _sanyo

2SC3551
2SC3551
Ordering number:EN1597C NPN Triple Diffused Planar Silicon Transistor 2SC3552 800V/12A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit:mm Fast switching speed (tf : 0.1 s typ). 2022A Wide ASO. [2SC3552] Adoption of MBIT process. 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1100 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 7 V Collector Current IC 12 A Collector Current (Pulse) ICP PW? 300 s, Duty Cycle? 10% 30 A Base Current IB 6 A Collector Dissipation PC Tc=25?C 150 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=800V, IE=0 10 A Emitter Cutoff Current IEBO VEB=5V, IC=0 1

4.2. 2sc3554.pdf Size:195K _nec

2SC3551
2SC3551

4.3. 2sc3553.pdf Size:23K _hitachi

2SC3551
2SC3551
2SC3553 Silicon NPN Epitaxial Application Low frequency amplifier Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SC3553 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 4V Collector current IC 500 mA Collector power dissipation PC 300 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 35 V IC = 10 A, IE = 0 voltage Collector to emitter breakdown V(BR)CEO 35 V IC = 1 mA, RBE = ? voltage Emitter to base breakdown V(BR)EBO 4 V IE = 10 A, IC = 0 voltage Collector cutoff current ICBO 0.5 A VCB = 20 V, IE = 0 DC current transfer ratio hFE1*1 60 320 VCE = 3 V, IC = 10 mA hFE2 10 VCE = 3 V, IC = 500 mA*2 Collector to emitter saturation VCE(sat) 0.2 0.6 V IC = 150 mA,

4.4. 2sc3552.pdf Size:80K _wingshing

2SC3551
2SC3551
Silicon Epitaxial Planar Transistor 2SC3552 GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose MT-100 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value V = 0V BE V - 1100 V CESM Collector-emitter voltage (open base) V - 500 V CEO Collector current (DC) I - 12 A C Collector current peak value A I - CM Total power dissipation T 25 mb P - 150 W tot Collector-emitter saturation voltage I = 4.5A; I = 1.0A C B V - 3 V CEsat Diode forward voltage I = 4.5A 1.5 2.0 V F V F Fall time I =4.5A,I =-I =0.8A,V =80V 0.3 1.0- s C B1 B2 CC t f LIMITING VALUES SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value V = 0V - 1100 V BE V CESM Collector-emitter voltage (open base) - 500 V V CEO Emitter-base oltage (open colloctor) 5 V V EBO Collector current (DC) - 12 A I C Base current (DC) -

4.5. 2sc3559.pdf Size:123K _inchange_semiconductor

2SC3551
2SC3551
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3559 DESCRIPTION · ·With TO-220Fa package ·High breakdown voltage ·High speed switching APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 3 A ICM Collector current-Peak 5 A IB Base current 1 A TC=25? 30 PC Collector power dissipation W Ta=25? 2 Junction temperature 150 ? Tj Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3559 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL P

4.6. 2sc3552.pdf Size:107K _inchange_semiconductor

2SC3551
2SC3551
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3552 DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 12 A ICM Collector Current-Peak 30 A IBB Base Current- Continuous 6 A Collector Power Dissipation PC @ TC=25? 150 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3552 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ? 800 V V(BR)EBO Emitter-Base Breakdown Vo

4.7. 2sc3550.pdf Size:261K _inchange_semiconductor

2SC3551
2SC3551
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3550 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 10 V IC Collector Current-Continuous 3 A IBB Base Current-Continuous 1 A Collector Power Dissipation PC @ TC=25? 80 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.5 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3550 ELECTRICAL CHARACTERISTICS

4.8. 2sc3557.pdf Size:55K _inchange_semiconductor

2SC3551
2SC3551
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3557 DESCRIPTION · ·With TO-220C package ·Low collector saturation voltage APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 4 A PC Collector power dissipation TC=25? 40 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3557 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=30mA; IB=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5

See also transistors datasheet: 2SC3546 , 2SC3547 , 2SC3547A , 2SC3547B , 2SC3548 , 2SC3549 , 2SC355 , 2SC3550 , BD679 , 2SC3552 , 2SC3552-N , 2SC3552-O , 2SC3552-R , 2SC3553 , 2SC3554 , 2SC3555 , 2SC3556 .

Keywords

 2SC3551 Datasheet  2SC3551 Datenblatt  2SC3551 RoHS  2SC3551 Distributor
 2SC3551 Application Notes  2SC3551 Component  2SC3551 Circuit  2SC3551 Schematic
 2SC3551 Equivalent  2SC3551 Cross Reference  2SC3551 Data Sheet  2SC3551 Fiche Technique

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