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2SC3551 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC3551

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 80

Maximum collector-base voltage |Ucb|, V: 900

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 5

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 35

Noise Figure, dB: -

Package of 2SC3551 transistor: TO218

2SC3551 Equivalent Transistors - Cross-Reference Search

2SC3551 PDF document for downloads:

1.1. 2sc3551.pdf Size:232K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3551 DESCRIPTION ·With TO-3PN package ·High voltage ,high speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 5 A IB Base current 3 A PC Collector power dissipation TC=25? 80 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction case 1.5 ?/W Inchange Semiconductor Product Specification Silicon NPN

4.1. 2sc3552.pdf Size:120K _sanyo

Ordering number:EN1597C NPN Triple Diffused Planar Silicon Transistor 2SC3552 800V/12A Switching Regulator Applications Features Package Dimensions · High breakdown voltage and high reliability. unit:mm · Fast switching speed (tf : 0.1µ s typ). 2022A · Wide ASO. [2SC3552] · Adoption of MBIT process. 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1100 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 7 V Collector Current IC 12 A Collector Current (Pulse) ICP PW? 300µ s, Duty Cycle? 10% 30 A Base Current IB 6 A Collector Dissipation PC Tc=25?C 150 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=800V, IE=0 10 µA Emitter Cutoff Current IEBO VEB=5V, IC=0 1

4.2. 2sc3554.pdf Size:195K _nec

4.3. 2sc3553.pdf Size:23K _hitachi

2SC3553 Silicon NPN Epitaxial Application Low frequency amplifier Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SC3553 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 4V Collector current IC 500 mA Collector power dissipation PC 300 mW Junction temperature Tj 150 ° C Storage temperature Tstg –55 to +150 ° C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 35 — — V IC = 10 µ A, IE = 0 voltage Collector to emitter breakdown V(BR)CEO 35 — — V IC = 1 mA, RBE = ? voltage Emitter to base breakdown V(BR)EBO 4 — — V IE = 10 µ A, IC = 0 voltage Collector cutoff current ICBO — — 0.5 µ A VCB = 20 V, IE = 0 DC current transfer ratio hFE1*1 60 — 320 VCE = 3 V, IC = 10 mA hFE2 10 — — VCE = 3 V, IC = 500 mA*2 Collector to emitter saturation VCE(sat) — 0.2 0.6 V IC = 150 mA,

4.4. 2sc3552.pdf Size:80K _wingshing

Silicon Epitaxial Planar Transistor 2SC3552 GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose MT-100 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value V = 0V BE V - 1100 V CESM Collector-emitter voltage (open base) V - 500 V CEO Collector current (DC) I - 12 A C Collector current peak value A I - CM Total power dissipation T 25 mb P - 150 W tot Collector-emitter saturation voltage I = 4.5A; I = 1.0A C B V - 3 V CEsat Diode forward voltage I = 4.5A 1.5 2.0 V F V F Fall time I =4.5A,I =-I =0.8A,V =80V 0.3 1.0- s C B1 B2 CC t f LIMITING VALUES SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value V = 0V - 1100 V BE V CESM Collector-emitter voltage (open base) - 500 V V CEO Emitter-base oltage (open colloctor) 5 V V EBO Collector current (DC) - 12 A I C Base current (DC) -

4.5. 2sc3557.pdf Size:55K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3557 DESCRIPTION · ·With TO-220C package ·Low collector saturation voltage APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 4 A PC Collector power dissipation TC=25? 40 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3557 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=30mA; IB=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5

4.6. 2sc3559.pdf Size:123K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3559 DESCRIPTION · ·With TO-220Fa package ·High breakdown voltage ·High speed switching APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 3 A ICM Collector current-Peak 5 A IB Base current 1 A TC=25? 30 PC Collector power dissipation W Ta=25? 2 Junction temperature 150 ? Tj Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3559 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL P

4.7. 2sc3552.pdf Size:107K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3552 DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 12 A ICM Collector Current-Peak 30 A IBB Base Current- Continuous 6 A Collector Power Dissipation PC @ TC=25? 150 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3552 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ? 800 V V(BR)EBO Emitter-Base Breakdown Vo

4.8. 2sc3550.pdf Size:261K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3550 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 10 V IC Collector Current-Continuous 3 A IBB Base Current-Continuous 1 A Collector Power Dissipation PC @ TC=25? 80 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.5 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3550 ELECTRICAL CHARACTERISTICS

See also transistors datasheet: 2SC3546 , 2SC3547 , 2SC3547A , 2SC3547B , 2SC3548 , 2SC3549 , 2SC355 , 2SC3550 , BC158 , 2SC3552 , 2SC3552-N , 2SC3552-O , 2SC3552-R , 2SC3553 , 2SC3554 , 2SC3555 , 2SC3556 .

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