2N2060 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N2060

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.6

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 0.5

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 60

Collector capacitance (Cc), pF: 15

Forward current transfer ratio (hFE), min: 50

Noise Figure, dB: -

Package of 2N2060 transistor: TO77-1

2N2060 Equivalent Transistors - Cross-Reference Search

2N2060 PDF document for downloads:

1.1. 2n2060.pdf Size:53K _microsemi

TECHNICAL DATA UNITIZED DUAL NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/270 Devices Qualified Level JAN 2N2060 JANTX 2N2060L JANTXV MAXIMUM RATINGS Ratings Symbol 2N2060 Unit Collector-Emitter Voltage 60 Vdc VCEO Collector-Base Voltage 100 Vdc VCBO Emitter-Base Voltage 7.0 Vdc VEBO Collector Current 500 mAdc IC One Both Section Sections Total Power Dissipation @ T = +250C (1) 540 600 mW A PT @ T = +250C (2) 1.5 2.12 W C 0 Operating & Storage Junction Temperature Range TJ Tstg -65 to +200 C , 1) Derate linearly 3.08 mW/0C for T > 250C for one section, 3.48 mW/0C for both sections A TO-78* 2) Derate linearly 8.6 mW/0C for T > 250C for one section, 12.1 mW/0C for both sections C *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(3) V 80 Vdc (BR) CER RBE ? 10 ?

5.1. 2n105_2n206_2n247_2n269_2n301_2n301a_2n331_2n356_2n357_2n358.pdf Size:319K _rca

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See also transistors datasheet: 2N2043 , 2N2043A , 2N2048 , 2N2048A , 2N2049 , 2N205 , 2N2059 , 2N206 , 9013 , 2N2060A , 2N2060B , 2N2060DCSM , 2N2061 , 2N2061A , 2N2062 , 2N2062A , 2N2063 .

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