2N2067-W Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N2067-W

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 10

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 20

Maximum collector current |Ic max|, A: 3

Maximum junction temperature (Tj), °C: 90

Transition frequency (ft), MHz: 0.07

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 30

Noise Figure, dB: -

Package of 2N2067-W transistor: MM17

2N2067-W Equivalent Transistors - Cross-Reference Search

2N2067-W PDF document for downloads:

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5.2. 2n2060.pdf Size:53K _microsemi

TECHNICAL DATA UNITIZED DUAL NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/270 Devices Qualified Level JAN 2N2060 JANTX 2N2060L JANTXV MAXIMUM RATINGS Ratings Symbol 2N2060 Unit Collector-Emitter Voltage 60 Vdc VCEO Collector-Base Voltage 100 Vdc VCBO Emitter-Base Voltage 7.0 Vdc VEBO Collector Current 500 mAdc IC One Both Section Sections Total Power Dissipation @ T = +250C (1) 540 600 mW A PT @ T = +250C (2) 1.5 2.12 W C 0 Operating & Storage Junction Temperature Range TJ Tstg -65 to +200 C , 1) Derate linearly 3.08 mW/0C for T > 250C for one section, 3.48 mW/0C for both sections A TO-78* 2) Derate linearly 8.6 mW/0C for T > 250C for one section, 12.1 mW/0C for both sections C *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(3) V 80 Vdc (BR) CER RBE ? 10 ?

See also transistors datasheet: 2N2065 , 2N2065A , 2N2066 , 2N2066A , 2N2067 , 2N2067-B , 2N2067-G , 2N2067-O , BC546 , 2N2068 , 2N2068-G , 2N2068-O , 2N2069 , 2N207 , 2N2070 , 2N2071 , 2N2072 .

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