2SC3837 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC3837

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.28

Maximum collector-base voltage |Ucb|, V: 30

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.05

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 1500

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of 2SC3837 transistor: TO236

2SC3837 Equivalent Transistors - Cross-Reference Search

2SC3837 PDF document for downloads:

1.1. 2sc5661_2sc4725_2sc4082_2sc3837k.pdf Size:187K _rohm

High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K ?Features ?Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC5661 2) Small rbb’?Cc and high gain. (Typ. 6ps) 3) Small NF. (1) Base ?Packaging specifications and hFE ROHM : VMT3 (2) Emitter Type 2SC5661 2SC4725 2SC4082 2SC3837K (3) Collector Package VMT3 EMT3 UMT3 SMT3 hFE NP NP NP NP 2SC4725 Marking AC? AC? 1C? AC? Code TL T106 T146 T2L Basic ordering unit 8000 3000 3000 3000 (pieces) ? Denotes hFE (1) Emitter (2) Base ROHM : EMT3 EIAJ : SC-75A (3) Collector 2SC4082 ? Absolute maximum ratings (Ta=25?C) Parameter Symbol Limits Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 3 V (1) Emitter Collector current IC 50 mA (2) Base 2SC5661, 2SC4725 0.15 (3) Collector Collector power PC W ROHM : UMT3 dissipation 2SC4082, 2SC3837K 0.2 EIAJ : SC-70 Each lead has same dimensi

1.2. 2sc3837k.pdf Size:71K _rohm

2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Transistors High-Frequency Amplifier Transistor (18V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K External dimensions (Units : mm) Features 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC5661 1.2 0.2 0.8 0.2 2) Small rbb’?Cc and high gain. (Typ. 6ps) (2) (3) 3) Small NF. (1) (1) Base 0.15Max. ROHM : VMT3 (2) Emitter (3) Collector Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit 2SC4725 Collector-base voltage VCBO 30 V (1) Collector-emitter voltage VCEO 18 V (2) (3) Emitter-base voltage VEBO 3 V Collector current IC 50 mA 0.8 2SC5661, 2SC4725 0.15 Collector power PC W dissipation 1.6 2SC4082, 2SC3837K 0.2 Junction temperature Tj 150 °C (1) Emitter (2) Base Storage temperature Tstg -55~+150 °C ROHM : EMT3 0.1Min. EIAJ : SC-75A (3) Collector 2SC4082 Packaging specifications and hFE Type 2SC5661 2SC4725 2SC4082 2SC3837K 1.25 Package VMT3 EMT3 UMT3 SMT3 2.1 hFE NP NP NP NP

4.1. 2sc383_2sc388.pdf Size:259K _toshiba

4.2. 2sc3839k.pdf Size:184K _rohm

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4.3. 2sc5662_2sc4726_2sc4083_2sc3838k.pdf Size:147K _rohm

High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 /2SC4083 / 2SC3838K ?Features ?Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT= 3.2GHz) 2SC5662 1.2 2) Small rbb’?Cc and high gain. (Typ. 4ps) 0.32 3) Small NF. (3) (1)(2) 0.22 0.13 0.4 0.4 0.5 (1) Base 0.8 (2) Emitter (3) Collector ROHM : VMT3 ?Packaging specifications and hFE Type 2SC4726 2SC4083 2SC3838K 2SC5662 2SC4726 1.6 0.7 Package VMT3 EMT3 UMT3 SMT3 0.3 0.55 hFE NP NP NP NP ( ) 3 Marking AD AD 1D AD ( ) ( ) 2 1 0.2 0.2 Code T2L TL T106 T146 0.15 0.5 0.5 Basic ordering unit (1) Emitter 1.0 8000 3000 3000 3000 ROHM : EMT3 (2) Base (pieces) EIAJ : SC-75A (3) Collector 2.0 0.9 2SC4083 0.3 0.2 0.7 (3) ?Absolute maximum ratings (Ta=25?C) (2) (1) Parameter Symbol Limits Unit (1) Emitter 0.65 0.65 (2) Base 0.15 Collector-base voltage VCBO 20 V 1.3 (3) Collector ROHM : UMT3 Collector-emitter voltage VCEO 11 V EIAJ : SC-70 Each lead has

4.4. 2sc3838.pdf Size:64K _rohm

2SC5662 / 2SC4726 / 2SC4083 / Transistors 2SC3838K / 2SC4043S High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 / 2SC4083 / 2SC3838K / 2SC4043S External dimensions (Units : mm) Features 1) High transition frequency. (Typ. fT= 1.5GHz) 2SC5662 1.2 0.2 0.8 0.2 2) Small rbb’?Cc and high gain. (Typ. 4ps) (2) 3) Small NF. (3) (1) (1) Base 0.15Max. (2) Emitter (3) Collector ROHM : VMT3 Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit 2SC4726 Collector-base voltage VCBO 20 V (1) Collector-emitter voltage VCEO 11 V Emitter-base voltage VEBO 3 V (2) (3) Collector current IC 50 mA 0.8 2SC5662, 2SC4726 0.15 Collector power 2SC4083, 2SC3838K PC 0.2 W dissipation 1.6 2SC4043S 0.3 Junction temperature Tj 150 °C ROHM : EMT3 (1) Emitter EIAJ : SC-75A Storage temperature Tstg -55~+150 °C (2) Base 0.1Min. (3) Collector 2SC4083 Packaging specifications and hFE Type 2SC5662 2SC4726 2SC4083 2SC3838K 2SC4043S 1.25 Packag

4.5. 2sc3836.pdf Size:28K _hitachi

2SC3836 Silicon NPN Epitaxial Application Low frequency amplifier, switching Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SC3836 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 15 V Collector current IC 300 mA Collector power dissipation PC 300 mW Junction temperature Tj 150 ° C Storage temperature Tstg –55 to +150 ° C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 60 — — V IC = 10 µ A, IE = 0 voltage Collector to emitter breakdown V(BR)CEO 50 — — V IC = 1 mA, RBE = ? voltage Emitter to base breakdown V(BE)EBO 15 — — V IE = 10 µ A, IC = 0 voltage Collector cutoff current ICBO — — 1 µ A VCB = 50 V, IE = 0 Base to emitter voltage VBE — — 0.75 V VCE = 6 V, IC = 1 mA DC current transfer ratio hFE1 800 — 2000 VCE = 6 V, IC = 100 mA (pulse test) hFE2 500 — — VCE

4.6. 2sc3835.pdf Size:28K _sanken-ele

2SC3835 Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) Application : Humidifier, DC-DC Converter, and General Purpose Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P) Symbol Ratings Unit Unit Symbol Conditions Ratings ±0.2 4.8 ±0.4 15.6 VCBO 200 VCB=200V 100max µ A ±0.1 V ICBO 9.6 2.0 VCEO 120 IEBO VEB=8V 100max µ A V VEBO 8 V(BR)CEO IC=50mA 120min V V a ±0.1 o3.2 IC 7(Pulse14) hFE VCE=4V, IC=3A 70to220 A b IB 3 VCE(sat) IC=3A, IB=0.3A 0.5max V A PC 70(Tc=25°C) VBE(sat) IC=3A, IB=0.3A 1.2max V W 2 Tj fT VCE=12V, IE=–0.5A 30typ MHz 150 °C 3 Tstg –55 to +150 COB VCB=10V, f=1MHz 110typ pF °C 1.05+0.2 0.65+0.2 -0.1 -0.1 ±0.1 ±0.1 5.45 5.45 1.4 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 6.0g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (A) (A) (µ s) (µ s) (µ s) a. Part No. b. Lot No. 50 16.7 3 10 –5 0.3 –0.6 0.5max 3.0max 0

4.7. 2sc3832.pdf Size:24K _sanken-ele

2SC3832 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose External Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) Symbol Conditions 2SC3832 Unit Symbol 2SC3832 Unit ±0.2 4.8 ±0.2 10.2 ±0.1 ICBO VCBO 500 V VCB=500V 100max µ A 2.0 IEBO VEB=10V 100max µ A VCEO 400 V V(BR)CEO IC=25mA 400min V VEBO 10 V ±0.2 o3.75 a hFE VCE=4V, IC=3A 10to30 IC 7(Pulse14) A b VCE(sat) IC=3A, IB=0.6A 0.5max V IB 2 A VBE(sat) IC=3A, IB=0.6A 1.3max V PC 50(Tc=25°C) W 1.35 Tj fT VCE=12V, IE=–0.5A 10typ MHz 150 °C COB VCB=10V, f=1MHz 50typ pF 0.65+0.2 Tstg –55 to +150 °C -0.1 2.5 2.5 1.4 Typical Switching Characteristics (Common Emitter) B C E VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.6g (V) (?) (A) (V) (V) (A) (A) (µ s) (µ s) (µ s) a. Type No. 200 66.7 3 10 –5 0.3 –0.6 1max 3max 0.5max b. Lot No. IC–VCE Chara

4.8. 2sc3833.pdf Size:25K _sanken-ele

2SC3833 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P) Symbol 2SC3833 Unit Symbol Conditions 2SC3833 Unit ±0.2 4.8 ±0.4 15.6 ±0.1 9.6 2.0 VCBO 500 V VCB=500V 100max µ A ICBO VCEO 400 V IEBO VEB=10V 100max µ A VEBO 10 V V(BR)CEO IC=25mA 400min V a ±0.1 o3.2 IC hFE VCE=4V, IC=7A 10to30 12(Pulse24) A b IB VCE(sat) IC=7A, IB=1.4A 0.5max V 4 A PC VBE(sat) IC=7A, IB=1.4A 1.3max V 2 100(Tc=25°C) W Tj fT VCE=12V, IE=–1A 10typ MHz 3 150 °C 1.05+0.2 0.65+0.2 Tstg –55 to +150 °C COB VCB=10V, f=1MHz 105typ pF -0.1 -0.1 ±0.1 ±0.1 5.45 5.45 1.4 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 6.0g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (A) (A) (µ s) (µ s) (µ s) a. Type No. b. Lot No. 200 28.5 7 10 –5 0.7 –1.

4.9. 2sc3834.pdf Size:23K _sanken-ele

2SC3834 Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) Application : Humidifier, DC-DC Converter, and General Purpose Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) External Dimensions MT-25(TO220) Symbol Symbol 2SC3834 Unit Conditions 2SC3834 Unit ±0.2 4.8 ±0.2 10.2 ±0.1 2.0 ICBO VCBO 200 V VCB=200V 100max µ A IEBO 100max µ A VEB=8V VCEO 120 V V(BR)CEO 120min V IC=50mA VEBO 8 V ±0.2 o3.75 a hFE 70to220 VCE=4V, IC=3A IC 7(Pulse14) A b VCE(sat) 0.5max V IC=3A, IB=0.3A IB 3 A VBE(sat) PC IC=3A, IB=0.3A 1.2max V 1.35 50(Tc=25°C) W fT Tj VCE=12V, IE=–0.5A 30typ MHz 150 °C COB 110typ pF 0.65+0.2 VCB=10V, f=1MHz -0.1 Tstg –55 to +150 °C 2.5 2.5 1.4 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 2.6g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (A) (A) (µ s) (µ s) (µ s) a. Type No. b. Lot No. 50 16.7 3 10 –5 0.3 –0.6 0.5max 3.0max 0.5max IC–VCE Characteris

4.10. 2sc3830.pdf Size:24K _sanken-ele

2SC3830 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) External Dimensions MT-25(TO220) Symbol 2SC3830 Unit Symbol Conditions 2SC3830 Unit ±0.2 4.8 ±0.2 10.2 ±0.1 VCBO 600 V ICBO VCB=600V 1max 2.0 mA VCEO 500 V µ A IEBO VEB=10V 100max VEBO 10 V V V(BR)CEO IC=25mA 500min ±0.2 o3.75 a IC 6(Pulse12) A hFE VCE=4V, IC=2A 10to30 b IB VCE(sat) IC=2A, IB=0.4A 0.5max V 2 A PC VBE(sat) IC=2A, IB=0.4A 1.3max V 50(Tc=25°C) W 1.35 Tj fT VCE=12V, IE=–0.5A 8typ MHz 150 °C Tstg –55 to +150 °C 0.65+0.2 COB VCB=10V, f=1MHz 45typ pF -0.1 2.5 2.5 1.4 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 2.6g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (A) (A) (µ s) (µ s) (µ s) a. Type No. b. Lot No. 200 100 2 10 –5 0.2 –0.4 1max 4.5max 0.5max IC–VCE Ch

4.11. 2sc3831.pdf Size:25K _sanken-ele

2SC3831 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P) Symbol 2SC3831 Unit Symbol Conditions 2SC3831 Unit ±0.2 4.8 ±0.4 15.6 ±0.1 9.6 2.0 VCBO 600 V VCB=600V 1max mA ICBO VCEO 500 V VEB=10V 100max µ A IEBO VEBO 10 V IC=25mA 500min V V(BR)CEO a ±0.1 o3.2 IC hFE VCE=4V, IC=5A 10to30 10(Pulse20) A b IB VCE(sat) IC=5A, IB=1A 0.5max V 4 A PC VBE(sat) IC=5A, IB=1A 1. 3max V 2 100(Tc=25°C) W Tj fT VCE=12V, IE=–1A 8typ MHz 3 150 °C Tstg –55 to +150 °C COB VCB=10V, f=1MHz 105typ pF 1.05+0.2 0.65+0.2 -0.1 -0.1 ±0.1 ±0.1 5.45 5.45 1.4 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 6.0g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (A) (A) (µ s) (µ s) (µ s) a. Type No. b. Lot No. 200 40 5 10 –5 0.5 –1.0 1max 4.

4.12. 2sc3835g.pdf Size:312K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3835G DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Good Linearity of hFE APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse 14 A IBB Base Current-Continuous 3 A Collector Power Dissipation PC @ TC=25? 70 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3835G ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CO

4.13. 2sc3835.pdf Size:326K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3835 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Good Linearity of hFE APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse 14 A IBB Base Current-Continuous 3 A Collector Power Dissipation PC @ TC=25? 70 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3835 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER COND

4.14. 2sc3832.pdf Size:86K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3832 DESCRIPTION · ·With TO-220C package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 7 A ICM Collector current-peak 14 A IB Base current 2 A PC Collector dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3832 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0

4.15. 2sc3833.pdf Size:258K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3833 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 10 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 24 A IBB Base Current-Continuous 4 A Collector Power Dissipation PC @ TC=25? 100 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3833 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Bre

4.16. 2sc3834.pdf Size:328K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3834 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Good Linearity of hFE APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse 14 A IBB Base Current-Continuous 3 A Collector Power Dissipation PC @ TC=25? 50 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3834 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER COND

4.17. 2sc3830.pdf Size:90K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3830 DESCRIPTION · ·With TO-220C package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 6 A ICM Collector current-peak 12 A IB Base current 2 A PC Collector dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3830 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0

4.18. 2sc3831.pdf Size:123K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3831 DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 10 A ICP Collector current-pulse 20 A IB Base current 4 A PC Collector power dissipation TC=25? 100 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3831 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO

4.19. 2sc3838.pdf Size:282K _gsme

? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM3838 MAXIMUM RATINGS ¦MAXIMUM RATINGS ????? MAXIMUM RATINGS Characteristic Symbol Rating Unit ???? ?? ??? ?? Collector-Emitter Voltage VCEO 11 Vdc ???????? Collector-Base Voltage VCBO 20 Vdc ??????? Emitter-Base Voltage VEBO 3.0 Vdc ??????? Collector Current-Continuous Ic 50 mAdc ?????-?? THERMAL CHARACTERISTICS ¦THERMAL CHARACTERISTICS ??? THERMAL CHARACTERISTICS Characteristic Symbol Max Unit ?? ???? ?? ??? PD Total Device Dissipation ????? 225 mW FR-5 Board(1) TA=25?????? 25? 1.8 mW/? Derate above25? ?? 25??? PD Total Device Dissipation ????? 300 mW Alumina Substrate ?????,(2)TA=25? Derate above25??? 25??? 2.4 mW/? Thermal Resistance Junction to Ambient R ?JA 417 ?/W ?? Junction and Storage Temperature TJ,Tstg -55to+150? ??????? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING GM3838

4.20. 2sc3838.pdf Size:838K _wietron

2SC3838 COLLECTOR High-Frequency Amplifier Transistor 3 3 NPN Silicon 1 1 P b Lead(Pb)-Free 2 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS (Ta=25?C) Rating Symbol Value Unit V Collector-Emitter Voltage CEO 11 V Collector-Base Voltage VCBO 20 V Emitter-Base Voltage VEBO 3.0 V IC mA Collector Current-Continuous 50 THERMAL CHARACTERISTICS Characteristics Symbol Value Unit Total Device Dissipation FR-5 Board(1) mW PD 150 T =25°C A R Thermal Resistance, Junction Ambient ?JA 625 °C/W Junction and Storage, Temperature TJ, Tstg -55 to +150 °C Device Marking 2SC3838=AD ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit - Collector-Emitter Breakdown Voltage(IC =1mA, I =0) V(BR)CEO 11 B V - Collector-Base Breakdown Voltage(IC =10µA, I =0) V V(BR)CBO 20 E V V(BR)EBO 3.0 Emitter-Base Breakdown Voltage(IE =10µA, IC =0) - - ICBO Collector Cufoff Current(VCB =10V, I =0) 0.5 µA E - IEBO 0.5 µA Emitter Cufoff Current(VEB =2V, I =0) C

See also transistors datasheet: 2SC383 , 2SC3830 , 2SC3831 , 2SC3832 , 2SC3833 , 2SC3834 , 2SC3835 , 2SC3836 , 2N1711 , 2SC3838 , 2SC3839 , 2SC384 , 2SC3840 , 2SC3841 , 2SC3842 , 2SC3843 , 2SC3844 .

Keywords