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2SC3837
  2SC3837
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2SC3837
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2SC3837
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List
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
2SC3837 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SC3837 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC3837

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.28

Maximum collector-base voltage |Ucb|, V: 30

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.05

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 1500

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of 2SC3837 transistor: TO236

2SC3837 Equivalent Transistors - Cross-Reference Search

2SC3837 PDF doc:

1.1. 2sc3837k.pdf Size:71K _rohm

2SC3837
2SC3837
2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Transistors High-Frequency Amplifier Transistor (18V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K External dimensions (Units : mm) Features 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC5661 1.2 0.2 0.8 0.2 2) Small rbb’?Cc and high gain. (Typ. 6ps) (2) (3) 3) Small NF. (1) (1) Base 0.15Max. ROHM : VMT3 (2) Emitter (3) Collector Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit 2SC4725 Collector-base voltage VCBO 30 V (1) Collector-emitter voltage VCEO 18 V (2) (3) Emitter-base voltage VEBO 3 V Collector current IC 50 mA 0.8 2SC5661, 2SC4725 0.15 Collector power PC W dissipation 1.6 2SC4082, 2SC3837K 0.2 Junction temperature Tj 150 °C (1) Emitter (2) Base Storage temperature Tstg -55~+150 °C ROHM : EMT3 0.1Min. EIAJ : SC-75A (3) Collector 2SC4082 Packaging specifications and hFE Type 2SC5661 2SC4725 2SC4082 2SC3837K 1.25 Package VMT3 EMT3 UMT3 SMT3 2.1 hFE NP NP NP NP

1.2. 2sc5661_2sc4725_2sc4082_2sc3837k.pdf Size:187K _rohm

2SC3837
2SC3837
High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K ?Features ?Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC5661 2) Small rbb’?Cc and high gain. (Typ. 6ps) 3) Small NF. (1) Base ?Packaging specifications and hFE ROHM : VMT3 (2) Emitter Type 2SC5661 2SC4725 2SC4082 2SC3837K (3) Collector Package VMT3 EMT3 UMT3 SMT3 hFE NP NP NP NP 2SC4725 Marking AC? AC? 1C? AC? Code TL T106 T146 T2L Basic ordering unit 8000 3000 3000 3000 (pieces) ? Denotes hFE (1) Emitter (2) Base ROHM : EMT3 EIAJ : SC-75A (3) Collector 2SC4082 ? Absolute maximum ratings (Ta=25?C) Parameter Symbol Limits Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 3 V (1) Emitter Collector current IC 50 mA (2) Base 2SC5661, 2SC4725 0.15 (3) Collector Collector power PC W ROHM : UMT3 dissipation 2SC4082, 2SC3837K 0.2 EIAJ : SC-70 Each lead has same dimensi

4.1. 2sc383_2sc388.pdf Size:259K _toshiba

2SC3837
2SC3837

4.2. 2sc5662_2sc4726_2sc4083_2sc3838k.pdf Size:147K _rohm

2SC3837
2SC3837
High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 /2SC4083 / 2SC3838K ?Features ?Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT= 3.2GHz) 2SC5662 1.2 2) Small rbb’?Cc and high gain. (Typ. 4ps) 0.32 3) Small NF. (3) (1)(2) 0.22 0.13 0.4 0.4 0.5 (1) Base 0.8 (2) Emitter (3) Collector ROHM : VMT3 ?Packaging specifications and hFE Type 2SC4726 2SC4083 2SC3838K 2SC5662 2SC4726 1.6 0.7 Package VMT3 EMT3 UMT3 SMT3 0.3 0.55 hFE NP NP NP NP ( ) 3 Marking AD AD 1D AD ( ) ( ) 2 1 0.2 0.2 Code T2L TL T106 T146 0.15 0.5 0.5 Basic ordering unit (1) Emitter 1.0 8000 3000 3000 3000 ROHM : EMT3 (2) Base (pieces) EIAJ : SC-75A (3) Collector 2.0 0.9 2SC4083 0.3 0.2 0.7 (3) ?Absolute maximum ratings (Ta=25?C) (2) (1) Parameter Symbol Limits Unit (1) Emitter 0.65 0.65 (2) Base 0.15 Collector-base voltage VCBO 20 V 1.3 (3) Collector ROHM : UMT3 Collector-emitter voltage VCEO 11 V EIAJ : SC-70 Each lead has

4.3. 2sc3839k.pdf Size:184K _rohm

2SC3837
2SC3837
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

4.4. 2sc3838.pdf Size:64K _rohm

2SC3837
2SC3837
2SC5662 / 2SC4726 / 2SC4083 / Transistors 2SC3838K / 2SC4043S High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 / 2SC4083 / 2SC3838K / 2SC4043S External dimensions (Units : mm) Features 1) High transition frequency. (Typ. fT= 1.5GHz) 2SC5662 1.2 0.2 0.8 0.2 2) Small rbb’?Cc and high gain. (Typ. 4ps) (2) 3) Small NF. (3) (1) (1) Base 0.15Max. (2) Emitter (3) Collector ROHM : VMT3 Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit 2SC4726 Collector-base voltage VCBO 20 V (1) Collector-emitter voltage VCEO 11 V Emitter-base voltage VEBO 3 V (2) (3) Collector current IC 50 mA 0.8 2SC5662, 2SC4726 0.15 Collector power 2SC4083, 2SC3838K PC 0.2 W dissipation 1.6 2SC4043S 0.3 Junction temperature Tj 150 °C ROHM : EMT3 (1) Emitter EIAJ : SC-75A Storage temperature Tstg -55~+150 °C (2) Base 0.1Min. (3) Collector 2SC4083 Packaging specifications and hFE Type 2SC5662 2SC4726 2SC4083 2SC3838K 2SC4043S 1.25 Packag

4.5. 2sc3836.pdf Size:28K _hitachi

2SC3837
2SC3837
2SC3836 Silicon NPN Epitaxial Application Low frequency amplifier, switching Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SC3836 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 15 V Collector current IC 300 mA Collector power dissipation PC 300 mW Junction temperature Tj 150 ° C Storage temperature Tstg –55 to +150 ° C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 60 — — V IC = 10 µ A, IE = 0 voltage Collector to emitter breakdown V(BR)CEO 50 — — V IC = 1 mA, RBE = ? voltage Emitter to base breakdown V(BE)EBO 15 — — V IE = 10 µ A, IC = 0 voltage Collector cutoff current ICBO — — 1 µ A VCB = 50 V, IE = 0 Base to emitter voltage VBE — — 0.75 V VCE = 6 V, IC = 1 mA DC current transfer ratio hFE1 800 — 2000 VCE = 6 V, IC = 100 mA (pulse test) hFE2 500 — — VCE

4.6. 2sc3831.pdf Size:25K _sanken-ele

2SC3837
2SC3837
2SC3831 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P) Symbol 2SC3831 Unit Symbol Conditions 2SC3831 Unit ±0.2 4.8 ±0.4 15.6 ±0.1 9.6 2.0 VCBO 600 V VCB=600V 1max mA ICBO VCEO 500 V VEB=10V 100max µ A IEBO VEBO 10 V IC=25mA 500min V V(BR)CEO a ±0.1 o3.2 IC hFE VCE=4V, IC=5A 10to30 10(Pulse20) A b IB VCE(sat) IC=5A, IB=1A 0.5max V 4 A PC VBE(sat) IC=5A, IB=1A 1. 3max V 2 100(Tc=25°C) W Tj fT VCE=12V, IE=–1A 8typ MHz 3 150 °C Tstg –55 to +150 °C COB VCB=10V, f=1MHz 105typ pF 1.05+0.2 0.65+0.2 -0.1 -0.1 ±0.1 ±0.1 5.45 5.45 1.4 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 6.0g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (A) (A) (µ s) (µ s) (µ s) a. Type No. b. Lot No. 200 40 5 10 –5 0.5 –1.0 1max 4.

4.7. 2sc3832.pdf Size:24K _sanken-ele

2SC3837
2SC3837
2SC3832 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose External Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) Symbol Conditions 2SC3832 Unit Symbol 2SC3832 Unit ±0.2 4.8 ±0.2 10.2 ±0.1 ICBO VCBO 500 V VCB=500V 100max µ A 2.0 IEBO VEB=10V 100max µ A VCEO 400 V V(BR)CEO IC=25mA 400min V VEBO 10 V ±0.2 o3.75 a hFE VCE=4V, IC=3A 10to30 IC 7(Pulse14) A b VCE(sat) IC=3A, IB=0.6A 0.5max V IB 2 A VBE(sat) IC=3A, IB=0.6A 1.3max V PC 50(Tc=25°C) W 1.35 Tj fT VCE=12V, IE=–0.5A 10typ MHz 150 °C COB VCB=10V, f=1MHz 50typ pF 0.65+0.2 Tstg –55 to +150 °C -0.1 2.5 2.5 1.4 Typical Switching Characteristics (Common Emitter) B C E VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.6g (V) (?) (A) (V) (V) (A) (A) (µ s) (µ s) (µ s) a. Type No. 200 66.7 3 10 –5 0.3 –0.6 1max 3max 0.5max b. Lot No. IC–VCE Chara

4.8. 2sc3834.pdf Size:23K _sanken-ele

2SC3837
2SC3837
2SC3834 Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) Application : Humidifier, DC-DC Converter, and General Purpose Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) External Dimensions MT-25(TO220) Symbol Symbol 2SC3834 Unit Conditions 2SC3834 Unit ±0.2 4.8 ±0.2 10.2 ±0.1 2.0 ICBO VCBO 200 V VCB=200V 100max µ A IEBO 100max µ A VEB=8V VCEO 120 V V(BR)CEO 120min V IC=50mA VEBO 8 V ±0.2 o3.75 a hFE 70to220 VCE=4V, IC=3A IC 7(Pulse14) A b VCE(sat) 0.5max V IC=3A, IB=0.3A IB 3 A VBE(sat) PC IC=3A, IB=0.3A 1.2max V 1.35 50(Tc=25°C) W fT Tj VCE=12V, IE=–0.5A 30typ MHz 150 °C COB 110typ pF 0.65+0.2 VCB=10V, f=1MHz -0.1 Tstg –55 to +150 °C 2.5 2.5 1.4 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 2.6g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (A) (A) (µ s) (µ s) (µ s) a. Type No. b. Lot No. 50 16.7 3 10 –5 0.3 –0.6 0.5max 3.0max 0.5max IC–VCE Characteris

4.9. 2sc3835.pdf Size:28K _sanken-ele

2SC3837
2SC3837
2SC3835 Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) Application : Humidifier, DC-DC Converter, and General Purpose Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P) Symbol Ratings Unit Unit Symbol Conditions Ratings ±0.2 4.8 ±0.4 15.6 VCBO 200 VCB=200V 100max µ A ±0.1 V ICBO 9.6 2.0 VCEO 120 IEBO VEB=8V 100max µ A V VEBO 8 V(BR)CEO IC=50mA 120min V V a ±0.1 o3.2 IC 7(Pulse14) hFE VCE=4V, IC=3A 70to220 A b IB 3 VCE(sat) IC=3A, IB=0.3A 0.5max V A PC 70(Tc=25°C) VBE(sat) IC=3A, IB=0.3A 1.2max V W 2 Tj fT VCE=12V, IE=–0.5A 30typ MHz 150 °C 3 Tstg –55 to +150 COB VCB=10V, f=1MHz 110typ pF °C 1.05+0.2 0.65+0.2 -0.1 -0.1 ±0.1 ±0.1 5.45 5.45 1.4 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 6.0g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (A) (A) (µ s) (µ s) (µ s) a. Part No. b. Lot No. 50 16.7 3 10 –5 0.3 –0.6 0.5max 3.0max 0

4.10. 2sc3830.pdf Size:24K _sanken-ele

2SC3837
2SC3837
2SC3830 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) External Dimensions MT-25(TO220) Symbol 2SC3830 Unit Symbol Conditions 2SC3830 Unit ±0.2 4.8 ±0.2 10.2 ±0.1 VCBO 600 V ICBO VCB=600V 1max 2.0 mA VCEO 500 V µ A IEBO VEB=10V 100max VEBO 10 V V V(BR)CEO IC=25mA 500min ±0.2 o3.75 a IC 6(Pulse12) A hFE VCE=4V, IC=2A 10to30 b IB VCE(sat) IC=2A, IB=0.4A 0.5max V 2 A PC VBE(sat) IC=2A, IB=0.4A 1.3max V 50(Tc=25°C) W 1.35 Tj fT VCE=12V, IE=–0.5A 8typ MHz 150 °C Tstg –55 to +150 °C 0.65+0.2 COB VCB=10V, f=1MHz 45typ pF -0.1 2.5 2.5 1.4 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 2.6g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (A) (A) (µ s) (µ s) (µ s) a. Type No. b. Lot No. 200 100 2 10 –5 0.2 –0.4 1max 4.5max 0.5max IC–VCE Ch

4.11. 2sc3833.pdf Size:25K _sanken-ele

2SC3837
2SC3837
2SC3833 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P) Symbol 2SC3833 Unit Symbol Conditions 2SC3833 Unit ±0.2 4.8 ±0.4 15.6 ±0.1 9.6 2.0 VCBO 500 V VCB=500V 100max µ A ICBO VCEO 400 V IEBO VEB=10V 100max µ A VEBO 10 V V(BR)CEO IC=25mA 400min V a ±0.1 o3.2 IC hFE VCE=4V, IC=7A 10to30 12(Pulse24) A b IB VCE(sat) IC=7A, IB=1.4A 0.5max V 4 A PC VBE(sat) IC=7A, IB=1.4A 1.3max V 2 100(Tc=25°C) W Tj fT VCE=12V, IE=–1A 10typ MHz 3 150 °C 1.05+0.2 0.65+0.2 Tstg –55 to +150 °C COB VCB=10V, f=1MHz 105typ pF -0.1 -0.1 ±0.1 ±0.1 5.45 5.45 1.4 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 6.0g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (A) (A) (µ s) (µ s) (µ s) a. Type No. b. Lot No. 200 28.5 7 10 –5 0.7 –1.

4.12. 2sc3831.pdf Size:123K _inchange_semiconductor

2SC3837
2SC3837
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3831 DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 10 A ICP Collector current-pulse 20 A IB Base current 4 A PC Collector power dissipation TC=25? 100 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3831 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO

4.13. 2sc3832.pdf Size:86K _inchange_semiconductor

2SC3837
2SC3837
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3832 DESCRIPTION · ·With TO-220C package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 7 A ICM Collector current-peak 14 A IB Base current 2 A PC Collector dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3832 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0

4.14. 2sc3835g.pdf Size:312K _inchange_semiconductor

2SC3837
2SC3837
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3835G DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Good Linearity of hFE APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse 14 A IBB Base Current-Continuous 3 A Collector Power Dissipation PC @ TC=25? 70 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3835G ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CO

4.15. 2sc3834.pdf Size:328K _inchange_semiconductor

2SC3837
2SC3837
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3834 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Good Linearity of hFE APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse 14 A IBB Base Current-Continuous 3 A Collector Power Dissipation PC @ TC=25? 50 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3834 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER COND

4.16. 2sc3835.pdf Size:326K _inchange_semiconductor

2SC3837
2SC3837
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3835 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Good Linearity of hFE APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse 14 A IBB Base Current-Continuous 3 A Collector Power Dissipation PC @ TC=25? 70 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3835 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER COND

4.17. 2sc3830.pdf Size:90K _inchange_semiconductor

2SC3837
2SC3837
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3830 DESCRIPTION · ·With TO-220C package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 6 A ICM Collector current-peak 12 A IB Base current 2 A PC Collector dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3830 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0

4.18. 2sc3833.pdf Size:258K _inchange_semiconductor

2SC3837
2SC3837
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3833 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 10 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 24 A IBB Base Current-Continuous 4 A Collector Power Dissipation PC @ TC=25? 100 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3833 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Bre

4.19. 2sc3838.pdf Size:282K _gsme

2SC3837
2SC3837
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM3838 MAXIMUM RATINGS ¦MAXIMUM RATINGS ????? MAXIMUM RATINGS Characteristic Symbol Rating Unit ???? ?? ??? ?? Collector-Emitter Voltage VCEO 11 Vdc ???????? Collector-Base Voltage VCBO 20 Vdc ??????? Emitter-Base Voltage VEBO 3.0 Vdc ??????? Collector Current-Continuous Ic 50 mAdc ?????-?? THERMAL CHARACTERISTICS ¦THERMAL CHARACTERISTICS ??? THERMAL CHARACTERISTICS Characteristic Symbol Max Unit ?? ???? ?? ??? PD Total Device Dissipation ????? 225 mW FR-5 Board(1) TA=25?????? 25? 1.8 mW/? Derate above25? ?? 25??? PD Total Device Dissipation ????? 300 mW Alumina Substrate ?????,(2)TA=25? Derate above25??? 25??? 2.4 mW/? Thermal Resistance Junction to Ambient R ?JA 417 ?/W ?? Junction and Storage Temperature TJ,Tstg -55to+150? ??????? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING GM3838

4.20. 2sc3838.pdf Size:838K _wietron

2SC3837
2SC3837
2SC3838 COLLECTOR High-Frequency Amplifier Transistor 3 3 NPN Silicon 1 1 P b Lead(Pb)-Free 2 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS (Ta=25?C) Rating Symbol Value Unit V Collector-Emitter Voltage CEO 11 V Collector-Base Voltage VCBO 20 V Emitter-Base Voltage VEBO 3.0 V IC mA Collector Current-Continuous 50 THERMAL CHARACTERISTICS Characteristics Symbol Value Unit Total Device Dissipation FR-5 Board(1) mW PD 150 T =25°C A R Thermal Resistance, Junction Ambient ?JA 625 °C/W Junction and Storage, Temperature TJ, Tstg -55 to +150 °C Device Marking 2SC3838=AD ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit - Collector-Emitter Breakdown Voltage(IC =1mA, I =0) V(BR)CEO 11 B V - Collector-Base Breakdown Voltage(IC =10µA, I =0) V V(BR)CBO 20 E V V(BR)EBO 3.0 Emitter-Base Breakdown Voltage(IE =10µA, IC =0) - - ICBO Collector Cufoff Current(VCB =10V, I =0) 0.5 µA E - IEBO 0.5 µA Emitter Cufoff Current(VEB =2V, I =0) C

See also transistors datasheet: 2SC383 , 2SC3830 , 2SC3831 , 2SC3832 , 2SC3833 , 2SC3834 , 2SC3835 , 2SC3836 , KT829A , 2SC3838 , 2SC3839 , 2SC384 , 2SC3840 , 2SC3841 , 2SC3842 , 2SC3843 , 2SC3844 .

Keywords

 2SC3837 Datasheet  2SC3837 Datenblatt  2SC3837 RoHS  2SC3837 Distributor
 2SC3837 Application Notes  2SC3837 Component  2SC3837 Circuit  2SC3837 Schematic
 2SC3837 Equivalent  2SC3837 Cross Reference  2SC3837 Data Sheet  2SC3837 Fiche Technique

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