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2SC3837
  2SC3837
  2SC3837
 
2SC3837
  2SC3837
  2SC3837
 
2SC3837
  2SC3837
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU214
BU215 .. BUF410AI
BUF410FI .. BUS22BF
BUS22C .. BUW81A
BUW84 .. BUY83
BUY84 .. CD9013J
CD9014 .. CIL157
CIL157A .. CL166A
CL166B .. CPS2540B
CPS2545B .. CSA968
CSA968A .. CSC2688BPL
CSC2688G .. CTP1108
CTP1109 .. D29J6
D29J7 .. D42CU5
D42CU6 .. D64VP4
D64VP5 .. DT400-300
DT400-400 .. DTC015EM
DTC015EUB .. DTL3501
DTL3502 .. ECG2332
ECG2334 .. ED1602C
ED1602D .. ET206
ET359 .. FE4021
FE4022 .. FMG12
FMG13 .. FPC644
FPC828 .. FXT555SM
FXT557 .. GE55821
GE56551 .. GET3
GET3013 .. GSDS50018
GSDS50020 .. GT43
GT44 .. HEPS3035
HEPS3047 .. HSE131
HSE133 .. IMX2
IMX3 .. K2107
K2107A .. KRA161F
KRA163F .. KRC117
KRC117M .. KRC868E
KRC868U .. KSB772-R
KSB772-Y .. KSC5020-R
KSC5020-Y .. KSE13004
KSE13005 .. KT210B
KT210V .. KT347B
KT347V .. KT644G
KT644V .. KT817G9
KT817V .. KT916B
KT918A .. KTC3103A1
KTC3103B1 .. KTX311T
KTX312T .. MD1131F
MD1132 .. MJ14002
MJ14003 .. MJE13003HT
MJE13003HV .. MJF18008
MJF2955 .. MMBT1015
MMBT123S .. MMBTA56L
MMBTA56LT1 .. MP1550A
MP1551 .. MP800
MP801 .. MPS3866
MPS3900 .. MPSW55
MPSW56 .. MT3002
MT3011 .. NA21ZX
NA21ZY .. NB021FZ
NB021H .. NB213YY
NB213Z .. NKT242L
NKT243 .. NR431DF
NR431DG .. NTE2542
NTE2543 .. P217A
P217B .. PDTA114YT
PDTA114YU .. PMD1702K
PMD1703K .. PTB20030
PTB20031 .. RCA8767
RCA9113 .. RN1909
RN1909AFS .. RN2963
RN2963CT .. S637T
S662T .. SE8541
SE8542 .. SM3180
SM3181 .. SRC1207E
SRC1207EF .. STD882D
STD888 .. T1381
T1382 .. TBF872
TC200 .. TIP33BF
TIP33C .. TIX803
TIX804 .. TN5415A
TN5447 .. TR8031
TR8040 .. UN2112
UN2113 .. UPT313
UPT314 .. ZTX108AK
ZTX108AL .. ZTX556
ZTX557 .. ZXTPS720MC
 
2SC3837 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SC3837 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC3837

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.28

Maximum collector-base voltage |Ucb|, V: 30

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.05

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 1500

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of 2SC3837 transistor: TO236

2SC3837 Equivalent Transistors - Cross-Reference Search

2SC3837 PDF doc:

1.1. 2sc3837k.pdf Size:71K _rohm

2SC3837
2SC3837
2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Transistors High-Frequency Amplifier Transistor (18V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K External dimensions (Units : mm) Features 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC5661 1.2 0.2 0.8 0.2 2) Small rbb’?Cc and high gain. (Typ. 6ps) (2) (3) 3) Small NF. (1) (1) Base 0.15Max. ROHM : VMT3 (2) Emitter (3) Collector Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit 2SC4725 Collector-base voltage VCBO 30 V (1) Collector-emitter voltage VCEO 18 V (2) (3) Emitter-base voltage VEBO 3 V Collector current IC 50 mA 0.8 2SC5661, 2SC4725 0.15 Collector power PC W dissipation 1.6 2SC4082, 2SC3837K 0.2 Junction temperature Tj 150 °C (1) Emitter (2) Base Storage temperature Tstg -55~+150 °C ROHM : EMT3 0.1Min. EIAJ : SC-75A (3) Collector 2SC4082 Packaging specifications and hFE Type 2SC5661 2SC4725 2SC4082 2SC3837K 1.25 Package VMT3 EMT3 UMT3 SMT3 2.1 hFE NP NP NP NP

1.2. 2sc5661_2sc4725_2sc4082_2sc3837k.pdf Size:187K _rohm

2SC3837
2SC3837
High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K ?Features ?Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC5661 2) Small rbb’?Cc and high gain. (Typ. 6ps) 3) Small NF. (1) Base ?Packaging specifications and hFE ROHM : VMT3 (2) Emitter Type 2SC5661 2SC4725 2SC4082 2SC3837K (3) Collector Package VMT3 EMT3 UMT3 SMT3 hFE NP NP NP NP 2SC4725 Marking AC? AC? 1C? AC? Code TL T106 T146 T2L Basic ordering unit 8000 3000 3000 3000 (pieces) ? Denotes hFE (1) Emitter (2) Base ROHM : EMT3 EIAJ : SC-75A (3) Collector 2SC4082 ? Absolute maximum ratings (Ta=25?C) Parameter Symbol Limits Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 3 V (1) Emitter Collector current IC 50 mA (2) Base 2SC5661, 2SC4725 0.15 (3) Collector Collector power PC W ROHM : UMT3 dissipation 2SC4082, 2SC3837K 0.2 EIAJ : SC-70 Each lead has same dimensi

4.1. 2sc383_2sc388.pdf Size:259K _toshiba

2SC3837
2SC3837

4.2. 2sc3838.pdf Size:64K _rohm

2SC3837
2SC3837
2SC5662 / 2SC4726 / 2SC4083 / Transistors 2SC3838K / 2SC4043S High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 / 2SC4083 / 2SC3838K / 2SC4043S External dimensions (Units : mm) Features 1) High transition frequency. (Typ. fT= 1.5GHz) 2SC5662 1.2 0.2 0.8 0.2 2) Small rbb’?Cc and high gain. (Typ. 4ps) (2) 3) Small NF. (3) (1) (1) Base 0.15Max. (2) Emitter (3) Collector ROHM : VMT3 Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit 2SC4726 Collector-base voltage VCBO 20 V (1) Collector-emitter voltage VCEO 11 V Emitter-base voltage VEBO 3 V (2) (3) Collector current IC 50 mA 0.8 2SC5662, 2SC4726 0.15 Collector power 2SC4083, 2SC3838K PC 0.2 W dissipation 1.6 2SC4043S 0.3 Junction temperature Tj 150 °C ROHM : EMT3 (1) Emitter EIAJ : SC-75A Storage temperature Tstg -55~+150 °C (2) Base 0.1Min. (3) Collector 2SC4083 Packaging specifications and hFE Type 2SC5662 2SC4726 2SC4083 2SC3838K 2SC4043S 1.25 Packag

4.3. 2sc5662_2sc4726_2sc4083_2sc3838k.pdf Size:147K _rohm

2SC3837
2SC3837
High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 /2SC4083 / 2SC3838K ?Features ?Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT= 3.2GHz) 2SC5662 1.2 2) Small rbb’?Cc and high gain. (Typ. 4ps) 0.32 3) Small NF. (3) (1)(2) 0.22 0.13 0.4 0.4 0.5 (1) Base 0.8 (2) Emitter (3) Collector ROHM : VMT3 ?Packaging specifications and hFE Type 2SC4726 2SC4083 2SC3838K 2SC5662 2SC4726 1.6 0.7 Package VMT3 EMT3 UMT3 SMT3 0.3 0.55 hFE NP NP NP NP ( ) 3 Marking AD AD 1D AD ( ) ( ) 2 1 0.2 0.2 Code T2L TL T106 T146 0.15 0.5 0.5 Basic ordering unit (1) Emitter 1.0 8000 3000 3000 3000 ROHM : EMT3 (2) Base (pieces) EIAJ : SC-75A (3) Collector 2.0 0.9 2SC4083 0.3 0.2 0.7 (3) ?Absolute maximum ratings (Ta=25?C) (2) (1) Parameter Symbol Limits Unit (1) Emitter 0.65 0.65 (2) Base 0.15 Collector-base voltage VCBO 20 V 1.3 (3) Collector ROHM : UMT3 Collector-emitter voltage VCEO 11 V EIAJ : SC-70 Each lead has

4.4. 2sc3839k.pdf Size:184K _rohm

2SC3837
2SC3837
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

4.5. 2sc3838.pdf Size:128K _utc

2SC3837
2SC3837
UNISONIC TECHNOLOGIES CO., LTD 2SC3838 NPN SILICON TRANSISTOR HIGH-FREQUENCY AMPLIFIER TRANSISTOR 3 FEATURES 1 2 *High transition frequency. *Small rbb’·Cc and high gain. SOT-23 *Small NF. 3 1 2 SOT-323 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC3838L-x-AE3-R 2SC3838G-x-AE3-R SOT-23 E B C Tape Reel 2SC3838L-x-AL3-R 2SC3838G-x-AL3-R SOT-323 E B C Tape Reel MARKING www.unisonic.com.tw 1 of 2 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R220-018,Ca 2SC3838 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta = 25?) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 11 V Emitter-Base Voltage VEBO 3 V Collector current IC 50 mA Collector power dissipation PD 0.2 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note Absolute maximum ratings are those values beyond which the device could be p

4.6. 2sc3835.pdf Size:120K _utc

2SC3837
2SC3837
UTC 2SC3835 NPN EPITAXIAL SILICON TRANSISTOR SWITCH NPN TRANSISTOR APLLICATION *Humidifier,DC-DC converter,and general purpose. 1 TO-3PN 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO 8 V Base Current IB 3 A Collector Current 7 A Ic Collector Current (PULSE) 14 A Collector Power Dissipation( Tc=25°C ) Pc 70 W Junction Temperature Tj 150 °C Storage Temperature TSTG -55 ~ +150 °C ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Emitter Breakdown Voltage BVCEO Ic= 50mA 120 V ?A Collector Cut-Off Current ICBO VCB=200V, IE=0 100 ?A Emitter Cut-Off Current IEBO VEB= 8V, Ic =0 100 DC Current Transfer Ratio hFE VCE= 4V,Ic= 3A 70 220 Collector-Emitter Saturation Voltage VCE(sat) Ic=3A ,IB=0.3A 0.5 V Base-Emitter Saturation Voltag

4.7. 2sc3834.pdf Size:208K _utc

2SC3837
2SC3837
UNISONIC TECHNOLOGIES CO., LTD 2SC3834 NPN SILICON TRANSISTOR SWITCH NPN TRANSISTOR DESCRIPTION The UTC 2SC3834 is an epitaxial planar type NPN silicon transistor.. FEATURES * Humidifier, DC-DC converter, and general purpose ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2SC3834L-TA3-T 2SC3834G-TA3-T TO-220 B C E Tube www.unisonic.com.tw 1 of 4 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R203-026.D 2SC3834 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V 200 V CBO Collector-emitter voltage V 120 V CEO Emitter-Base Voltage V 8 V EBO Collector Current (Pulse) I A C 7 A Base Current IB 3 50 W Collector Dissipation (TC=25°C) PC Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

4.8. 2sc3836.pdf Size:28K _hitachi

2SC3837
2SC3837
2SC3836 Silicon NPN Epitaxial Application Low frequency amplifier, switching Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SC3836 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 15 V Collector current IC 300 mA Collector power dissipation PC 300 mW Junction temperature Tj 150 ° C Storage temperature Tstg –55 to +150 ° C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 60 — — V IC = 10 µ A, IE = 0 voltage Collector to emitter breakdown V(BR)CEO 50 — — V IC = 1 mA, RBE = ? voltage Emitter to base breakdown V(BE)EBO 15 — — V IE = 10 µ A, IC = 0 voltage Collector cutoff current ICBO — — 1 µ A VCB = 50 V, IE = 0 Base to emitter voltage VBE — — 0.75 V VCE = 6 V, IC = 1 mA DC current transfer ratio hFE1 800 — 2000 VCE = 6 V, IC = 100 mA (pulse test) hFE2 500 — — VCE

4.9. 2sc3835.pdf Size:117K _jmnic

2SC3837
2SC3837
Product Specification www.jmnic.com Silicon NPN Power Transistor 2SC3835 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Good Linearity of hFE APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse 14 A IB Base Current-Continuous 3 A Collector Power Dissipation PC 70 W @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg 1 Product Specification www.jmnic.com Silicon NPN Power Transistor 2SC3835 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50m

4.10. 2sc3834.pdf Size:118K _jmnic

2SC3837
2SC3837
Product Specification www.jmnic.com Silicon NPN Power Transistor 2SC3834 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Good Linearity of hFE APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse 14 A IB Base Current-Continuous 3 A Collector Power Dissipation PC 50 W @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg 1 Product Specification www.jmnic.com Silicon NPN Power Transistor 2SC3834 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50m

4.11. 2sc3832.pdf Size:24K _sanken-ele

2SC3837
2SC3837
2SC3832 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose External Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) Symbol Conditions 2SC3832 Unit Symbol 2SC3832 Unit ±0.2 4.8 ±0.2 10.2 ±0.1 ICBO VCBO 500 V VCB=500V 100max µ A 2.0 IEBO VEB=10V 100max µ A VCEO 400 V V(BR)CEO IC=25mA 400min V VEBO 10 V ±0.2 o3.75 a hFE VCE=4V, IC=3A 10to30 IC 7(Pulse14) A b VCE(sat) IC=3A, IB=0.6A 0.5max V IB 2 A VBE(sat) IC=3A, IB=0.6A 1.3max V PC 50(Tc=25°C) W 1.35 Tj fT VCE=12V, IE=–0.5A 10typ MHz 150 °C COB VCB=10V, f=1MHz 50typ pF 0.65+0.2 Tstg –55 to +150 °C -0.1 2.5 2.5 1.4 Typical Switching Characteristics (Common Emitter) B C E VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.6g (V) (?) (A) (V) (V) (A) (A) (µ s) (µ s) (µ s) a. Type No. 200 66.7 3 10 –5 0.3 –0.6 1max 3max 0.5max b. Lot No. IC–VCE Chara

4.12. 2sc3831.pdf Size:25K _sanken-ele

2SC3837
2SC3837
2SC3831 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P) Symbol 2SC3831 Unit Symbol Conditions 2SC3831 Unit ±0.2 4.8 ±0.4 15.6 ±0.1 9.6 2.0 VCBO 600 V VCB=600V 1max mA ICBO VCEO 500 V VEB=10V 100max µ A IEBO VEBO 10 V IC=25mA 500min V V(BR)CEO a ±0.1 o3.2 IC hFE VCE=4V, IC=5A 10to30 10(Pulse20) A b IB VCE(sat) IC=5A, IB=1A 0.5max V 4 A PC VBE(sat) IC=5A, IB=1A 1. 3max V 2 100(Tc=25°C) W Tj fT VCE=12V, IE=–1A 8typ MHz 3 150 °C Tstg –55 to +150 °C COB VCB=10V, f=1MHz 105typ pF 1.05+0.2 0.65+0.2 -0.1 -0.1 ±0.1 ±0.1 5.45 5.45 1.4 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 6.0g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (A) (A) (µ s) (µ s) (µ s) a. Type No. b. Lot No. 200 40 5 10 –5 0.5 –1.0 1max 4.

4.13. 2sc3835.pdf Size:28K _sanken-ele

2SC3837
2SC3837
2SC3835 Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) Application : Humidifier, DC-DC Converter, and General Purpose Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P) Symbol Ratings Unit Unit Symbol Conditions Ratings ±0.2 4.8 ±0.4 15.6 VCBO 200 VCB=200V 100max µ A ±0.1 V ICBO 9.6 2.0 VCEO 120 IEBO VEB=8V 100max µ A V VEBO 8 V(BR)CEO IC=50mA 120min V V a ±0.1 o3.2 IC 7(Pulse14) hFE VCE=4V, IC=3A 70to220 A b IB 3 VCE(sat) IC=3A, IB=0.3A 0.5max V A PC 70(Tc=25°C) VBE(sat) IC=3A, IB=0.3A 1.2max V W 2 Tj fT VCE=12V, IE=–0.5A 30typ MHz 150 °C 3 Tstg –55 to +150 COB VCB=10V, f=1MHz 110typ pF °C 1.05+0.2 0.65+0.2 -0.1 -0.1 ±0.1 ±0.1 5.45 5.45 1.4 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 6.0g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (A) (A) (µ s) (µ s) (µ s) a. Part No. b. Lot No. 50 16.7 3 10 –5 0.3 –0.6 0.5max 3.0max 0

4.14. 2sc3834.pdf Size:23K _sanken-ele

2SC3837
2SC3837
2SC3834 Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) Application : Humidifier, DC-DC Converter, and General Purpose Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) External Dimensions MT-25(TO220) Symbol Symbol 2SC3834 Unit Conditions 2SC3834 Unit ±0.2 4.8 ±0.2 10.2 ±0.1 2.0 ICBO VCBO 200 V VCB=200V 100max µ A IEBO 100max µ A VEB=8V VCEO 120 V V(BR)CEO 120min V IC=50mA VEBO 8 V ±0.2 o3.75 a hFE 70to220 VCE=4V, IC=3A IC 7(Pulse14) A b VCE(sat) 0.5max V IC=3A, IB=0.3A IB 3 A VBE(sat) PC IC=3A, IB=0.3A 1.2max V 1.35 50(Tc=25°C) W fT Tj VCE=12V, IE=–0.5A 30typ MHz 150 °C COB 110typ pF 0.65+0.2 VCB=10V, f=1MHz -0.1 Tstg –55 to +150 °C 2.5 2.5 1.4 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 2.6g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (A) (A) (µ s) (µ s) (µ s) a. Type No. b. Lot No. 50 16.7 3 10 –5 0.3 –0.6 0.5max 3.0max 0.5max IC–VCE Characteris

4.15. 2sc3830.pdf Size:24K _sanken-ele

2SC3837
2SC3837
2SC3830 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) External Dimensions MT-25(TO220) Symbol 2SC3830 Unit Symbol Conditions 2SC3830 Unit ±0.2 4.8 ±0.2 10.2 ±0.1 VCBO 600 V ICBO VCB=600V 1max 2.0 mA VCEO 500 V µ A IEBO VEB=10V 100max VEBO 10 V V V(BR)CEO IC=25mA 500min ±0.2 o3.75 a IC 6(Pulse12) A hFE VCE=4V, IC=2A 10to30 b IB VCE(sat) IC=2A, IB=0.4A 0.5max V 2 A PC VBE(sat) IC=2A, IB=0.4A 1.3max V 50(Tc=25°C) W 1.35 Tj fT VCE=12V, IE=–0.5A 8typ MHz 150 °C Tstg –55 to +150 °C 0.65+0.2 COB VCB=10V, f=1MHz 45typ pF -0.1 2.5 2.5 1.4 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 2.6g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (A) (A) (µ s) (µ s) (µ s) a. Type No. b. Lot No. 200 100 2 10 –5 0.2 –0.4 1max 4.5max 0.5max IC–VCE Ch

4.16. 2sc3833.pdf Size:25K _sanken-ele

2SC3837
2SC3837
2SC3833 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P) Symbol 2SC3833 Unit Symbol Conditions 2SC3833 Unit ±0.2 4.8 ±0.4 15.6 ±0.1 9.6 2.0 VCBO 500 V VCB=500V 100max µ A ICBO VCEO 400 V IEBO VEB=10V 100max µ A VEBO 10 V V(BR)CEO IC=25mA 400min V a ±0.1 o3.2 IC hFE VCE=4V, IC=7A 10to30 12(Pulse24) A b IB VCE(sat) IC=7A, IB=1.4A 0.5max V 4 A PC VBE(sat) IC=7A, IB=1.4A 1.3max V 2 100(Tc=25°C) W Tj fT VCE=12V, IE=–1A 10typ MHz 3 150 °C 1.05+0.2 0.65+0.2 Tstg –55 to +150 °C COB VCB=10V, f=1MHz 105typ pF -0.1 -0.1 ±0.1 ±0.1 5.45 5.45 1.4 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 6.0g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (A) (A) (µ s) (µ s) (µ s) a. Type No. b. Lot No. 200 28.5 7 10 –5 0.7 –1.

4.17. 2sc3832.pdf Size:86K _inchange_semiconductor

2SC3837
2SC3837
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3832 DESCRIPTION · ·With TO-220C package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 7 A ICM Collector current-peak 14 A IB Base current 2 A PC Collector dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3832 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0

4.18. 2sc3831.pdf Size:123K _inchange_semiconductor

2SC3837
2SC3837
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3831 DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 10 A ICP Collector current-pulse 20 A IB Base current 4 A PC Collector power dissipation TC=25? 100 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3831 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO

4.19. 2sc3835.pdf Size:326K _inchange_semiconductor

2SC3837
2SC3837
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3835 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Good Linearity of hFE APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse 14 A IBB Base Current-Continuous 3 A Collector Power Dissipation PC @ TC=25? 70 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3835 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER COND

4.20. 2sc3834.pdf Size:328K _inchange_semiconductor

2SC3837
2SC3837
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3834 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Good Linearity of hFE APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse 14 A IBB Base Current-Continuous 3 A Collector Power Dissipation PC @ TC=25? 50 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3834 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER COND

4.21. 2sc3830.pdf Size:90K _inchange_semiconductor

2SC3837
2SC3837
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3830 DESCRIPTION · ·With TO-220C package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 6 A ICM Collector current-peak 12 A IB Base current 2 A PC Collector dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3830 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0

4.22. 2sc3835g.pdf Size:312K _inchange_semiconductor

2SC3837
2SC3837
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3835G DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Good Linearity of hFE APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse 14 A IBB Base Current-Continuous 3 A Collector Power Dissipation PC @ TC=25? 70 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3835G ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CO

4.23. 2sc3833.pdf Size:258K _inchange_semiconductor

2SC3837
2SC3837
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3833 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 10 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 24 A IBB Base Current-Continuous 4 A Collector Power Dissipation PC @ TC=25? 100 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3833 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Bre

4.24. 2sc3838.pdf Size:282K _gsme

2SC3837
2SC3837
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM3838 MAXIMUM RATINGS ¦MAXIMUM RATINGS ????? MAXIMUM RATINGS Characteristic Symbol Rating Unit ???? ?? ??? ?? Collector-Emitter Voltage VCEO 11 Vdc ???????? Collector-Base Voltage VCBO 20 Vdc ??????? Emitter-Base Voltage VEBO 3.0 Vdc ??????? Collector Current-Continuous Ic 50 mAdc ?????-?? THERMAL CHARACTERISTICS ¦THERMAL CHARACTERISTICS ??? THERMAL CHARACTERISTICS Characteristic Symbol Max Unit ?? ???? ?? ??? PD Total Device Dissipation ????? 225 mW FR-5 Board(1) TA=25?????? 25? 1.8 mW/? Derate above25? ?? 25??? PD Total Device Dissipation ????? 300 mW Alumina Substrate ?????,(2)TA=25? Derate above25??? 25??? 2.4 mW/? Thermal Resistance Junction to Ambient R ?JA 417 ?/W ?? Junction and Storage Temperature TJ,Tstg -55to+150? ??????? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING GM3838

4.25. 2sc3838.pdf Size:838K _wietron

2SC3837
2SC3837
2SC3838 COLLECTOR High-Frequency Amplifier Transistor 3 3 NPN Silicon 1 1 P b Lead(Pb)-Free 2 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS (Ta=25?C) Rating Symbol Value Unit V Collector-Emitter Voltage CEO 11 V Collector-Base Voltage VCBO 20 V Emitter-Base Voltage VEBO 3.0 V IC mA Collector Current-Continuous 50 THERMAL CHARACTERISTICS Characteristics Symbol Value Unit Total Device Dissipation FR-5 Board(1) mW PD 150 T =25°C A R Thermal Resistance, Junction Ambient ?JA 625 °C/W Junction and Storage, Temperature TJ, Tstg -55 to +150 °C Device Marking 2SC3838=AD ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit - Collector-Emitter Breakdown Voltage(IC =1mA, I =0) V(BR)CEO 11 B V - Collector-Base Breakdown Voltage(IC =10µA, I =0) V V(BR)CBO 20 E V V(BR)EBO 3.0 Emitter-Base Breakdown Voltage(IE =10µA, IC =0) - - ICBO Collector Cufoff Current(VCB =10V, I =0) 0.5 µA E - IEBO 0.5 µA Emitter Cufoff Current(VEB =2V, I =0) C

See also transistors datasheet: 2SC383 , 2SC3830 , 2SC3831 , 2SC3832 , 2SC3833 , 2SC3834 , 2SC3835 , 2SC3836 , KT829A , 2SC3838 , 2SC3839 , 2SC384 , 2SC3840 , 2SC3841 , 2SC3842 , 2SC3843 , 2SC3844 .

Keywords

 2SC3837 Datasheet  2SC3837 Datenblatt  2SC3837 RoHS  2SC3837 Distributor
 2SC3837 Application Notes  2SC3837 Component  2SC3837 Circuit  2SC3837 Schematic
 2SC3837 Equivalent  2SC3837 Cross Reference  2SC3837 Data Sheet  2SC3837 Fiche Technique

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