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2SC3858
  2SC3858
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2SC3858
  2SC3858
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2SC3858
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List
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
2SC3858 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SC3858 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC3858

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 200

Maximum collector-base voltage |Ucb|, V: 200

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 17

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 20

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 10

Noise Figure, dB: -

Package of 2SC3858 transistor: XM20

2SC3858 Equivalent Transistors - Cross-Reference Search

2SC3858 PDF doc:

1.1. 2sc3858.pdf Size:24K _sanken-ele

2SC3858
2SC3858
2SC3858 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1494) Application : Audio and General Purpose (Ta=25C) Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions MT-200 Symbol 2SC3858 Unit Symbol Conditions 2SC3858 Unit 0.2 6.0 0.3 36.4 VCBO ICBO VCB=200V 100max A 200 V 0.2 24.4 2.1 0.1 2-o3.2 9 VCEO IEBO VEB=6V 100max A 200 V VEBO V(BR)CEO IC=50mA 200min V 6 V IC hFE VCE=4V, IC=8A 50min? a 17 A b IB VCE(sat) IC=10A, IB=1A 2.5max V 5 A PC fT VCE=12V, IE=1A 20typ MHz 200(Tc=25C) W 2 Tj COB VCB=10V, f=1MHz 300typ pF 3 150 C 0.65+0.2 -0.1 1.05+0.2 -0.1 ? hFE Rank Y(50 to 100), P(70 to 140), G(90 to 180) Tstg 55 to +150 C +0.3 3.0 -0.1 0.1 0.1 5.45 5.45 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 18.4g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (A) (A) ( s) ( s) ( s) a. Type No. b. Lot No. 40 4 10 10 5 1 1 0.5typ 1.8typ 0.

1.2. 2sc3858.pdf Size:165K _inchange_semiconductor

2SC3858
2SC3858
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3858 DESCRIPTION Ў¤ With MT-200 package Ў¤ Complement to type 2SA1494 APPLICATIONS Ў¤ Audio and general purpose PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Ў¤ Absolute maximum ratings (Ta=25°C) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage CONDITIONS Open emitter CHA IN Collector current Base current Collector-emitter voltage Emitter-base voltage E SEM NG Open base Open collector OND IC TOR UC VALUE 200 200 6 17 5 UNIT V V V A A W Ўж Ўж Collector power dissipation Junction temperature Storage temperature TC=25Ўж 200 150 -55~150

4.1. 2sc3852.pdf Size:23K _no

2SC3858
2SC3858
High hFE LOW VCE (sat) 2SC3852/3852A Silicon NPN Epitaxial Planar Transistor Application : Driver for Solenoid and Motor, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F) Symbol 2SC3852 2SC3852A Unit Symbol Conditions 2SC3852 2SC3852A Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 80 100 10max A V ICBO VCEO 60 80 VCB= 80 100 V V VEBO 6 0.2 V IEBO VEB=6V 100max A o3.3 a IC 3 V(BR)CEO IC=25mA 60min 80min A V b IB 1 hFE VCE=4V, IC=0.5A A 500min PC 25(Tc=25C) VCE(sat) IC=2A, IB=50mA W 0.5max V 0.15 1.35 Tj 150 fT VCE=12V, IE=0.2A MHz C 15typ 0.15 1.35 Tstg 55 to +150 COB VCB=10V, f=1MHz pF C 50typ 0.85+0.2 -0.1 0.45+0.2 2.4 -0.1 0.2 2.54 2.54 0.2 2.2 Typical Switching Characteristics (Common Emitter) Weight : Approx 2.0g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (mA) (mA) ( s) ( s) ( s) a. Type No. B C E b. Lot No.

4.2. 2sc3850.pdf Size:79K _no

2SC3858
2SC3858

4.3. 2sc3853.pdf Size:278K _no

2SC3858
2SC3858

4.4. 2sc3855.pdf Size:25K _wingshing

2SC3858
2SC3858
2SC3855 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1491 ABSOLUTE MAXIMUM RATING (Ta=25C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 140 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 10 A Collector Dissipation PC 100 W Junction Temperature Tj 150 C Storage Temperature Tstg -55~150 C ELECTRICAL CHARACTERISTICS (Ta=25C C) C C Characterristic Symbol Test Condition Min Typ Max Unit Collector Base Breakdown Voltage BVCBO IC=5 mA IE=0 200 V Collector Emitter Breakdown Voltage BVCEO IC=10 mA 140 V Emitter Base Breakdown Voltage BVEBO RBE=? 6 V Collector Cutoff Current ICBO IE=5mA IC=0 0.1 mA Emitter Cutoff Current IEBO VCB=100V IE=0 0.1 mA *DC Current Gain hFE1 VEB=4V IC=0 55 160 DC Current Gain hFE2 VCE=5V IC=1A 50 Collector- Emitter Saturation Voltage VCE(sat) V

4.5. 2sc3854.pdf Size:25K _wingshing

2SC3858
2SC3858
2SC3854 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1490 ABSOLUTE MAXIMUM RATING (Ta=25C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 120 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 8 A Collector Dissipation PC 80 W Junction Temperature Tj 150 C Storage Temperature Tstg -55~150 C ELECTRICAL CHARACTERISTICS (Ta=25C C) C C Characterristic Symbol Test Condition Min Typ Max Unit Collector Base Breakdown Voltage BVCBO IC=5 mA IE=0 160 V Collector Emitter Breakdown Voltage BVCEO IC=10 mA 120 V Emitter Base Breakdown Voltage BVEBO RBE=? 6 V Collector Cutoff Current ICBO IE=5mA IC=0 0.1 mA Emitter Cutoff Current IEBO VCB=60V IE=0 0.1 mA *DC Current Gain hFE1 VEB=4V IC=0 55 160 DC Current Gain hFE2 VCE=5V IC=1A 50 Collector- Emitter Saturation Voltage VCE(sat) VCE=

4.6. 2sc3852.pdf Size:23K _sanken-ele

2SC3858
2SC3858
High hFE LOW VCE (sat) 2SC3852/3852A Silicon NPN Epitaxial Planar Transistor Application : Driver for Solenoid and Motor, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F) Symbol 2SC3852 2SC3852A Unit Symbol Conditions 2SC3852 2SC3852A Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 80 100 10max A V ICBO VCEO 60 80 VCB= 80 100 V V VEBO 6 0.2 V IEBO VEB=6V 100max A o3.3 a IC 3 V(BR)CEO IC=25mA 60min 80min A V b IB 1 hFE VCE=4V, IC=0.5A A 500min PC 25(Tc=25C) VCE(sat) IC=2A, IB=50mA W 0.5max V 0.15 1.35 Tj 150 fT VCE=12V, IE=0.2A MHz C 15typ 0.15 1.35 Tstg 55 to +150 COB VCB=10V, f=1MHz pF C 50typ 0.85+0.2 -0.1 0.45+0.2 2.4 -0.1 0.2 2.54 2.54 0.2 2.2 Typical Switching Characteristics (Common Emitter) Weight : Approx 2.0g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (mA) (mA) ( s) ( s) ( s) a. Type No. B C E b. Lot No.

4.7. 2sc3856.pdf Size:24K _sanken-ele

2SC3858
2SC3858
2SC3856 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492) Application : Audio and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol Symbol 2SC3856 Unit Conditions 2SC3856 Unit 0.2 4.8 0.4 15.6 ICBO 0.1 VCBO 200 V VCB=200V 100max A 9.6 2.0 IEBO VCEO 180 V VEB=6V 100max A V(BR)CEO VEBO 6 V IC=50mA 180min V a 0.1 o3.2 IC hFE 50min? 15 A VCE=4V, IC=3A b IB VCE(sat) 2.0max V 4 A IC=5A, IB=0.5A PC fT 20typ MHz 130(Tc=25C) W VCE=12V, IE=0.5A 2 Tj COB 300typ pF VCB=10V, f=1MHz 150 C 3 Tstg 55 to +150 C ? hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05+0.2 0.65+0.2 -0.1 -0.1 0.1 0.1 5.45 5.45 1.4 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 6.0g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (A) (A) ( s) ( s) ( s) a. Type No. b. Lot No. 40 4 10 10 5 1 1 0.5typ 1.8typ 0.6typ ICVCE

4.8. 2sc3851.pdf Size:24K _sanken-ele

2SC3858
2SC3858
2SC3851/3851A Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1488/A) Application : Audio and PPC High Voltage Power Supply, and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F) Symbol 2SC3851A Unit Symbol Conditions 2SC3851 2SC3851A Unit 2SC3851 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 100 V 100max A 80 ICBO VCEO 80 V VCB= 80 100 V 60 VEBO 6 0.2 V IEBO VEB=6V 100max o3.3 A a IC 4 b A V(BR)CEO IC=25mA 60min 80min V IB 1 40to320 A hFE VCE=4V, IC=1A 0.5max PC 25(Tc=25C) W VCE(sat) IC=2A, IB=0.2A V 0.15 1.35 15typ Tj 150 fT VCE=12V, IE=0.2A C MHz 0.15 1.35 60typ Tstg 55 to +150 COB VCB=10V, f=1MHz C pF 0.85+0.2 -0.1 0.45+0.2 2.4 -0.1 0.2 2.54 2.54 0.2 2.2 Typical Switching Characteristics (Common Emitter) Weight : Approx 2.0g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (mA) (mA) ( s) ( s) ( s) a. Type No. B C E b. Lot No.

4.9. 2sc3857.pdf Size:24K _sanken-ele

2SC3858
2SC3858
2SC3857 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1493) Application : Audio and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol 2SC3857 Symbol Conditions 2SC3857 Unit Unit 0.2 6.0 0.3 36.4 VCBO 200 ICBO VCB=200V 100max A V 0.2 24.4 2.1 0.1 VCEO 200 IEBO VEB=6V 100max A 2-o3.2 9 V V(BR)CEO IC=50mA 200min V VEBO 6 V hFE VCE=4V, IC=5A 50min? IC 15 A a b IB VCE(sat) IC=10A, IB=1A 3.0max V 5 A PC fT VCE=12V, IE=0.5A 20typ MHz 150(Tc=25C) W 2 Tj COB VCB=10V, f=1MHz 250typ pF 150 C 3 0.65+0.2 -0.1 1.05+0.2 -0.1 Tstg 55 to +150 ? hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) C +0.3 3.0 -0.1 0.1 0.1 5.45 5.45 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 18.4g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (A) (A) ( s) ( s) ( s) a. Type No. b. Lot No. 60 12 5 10 5 0.5 0.5 0.3typ

4.10. 2sc3852.pdf Size:73K _inchange_semiconductor

2SC3858
2SC3858
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3852 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= 0.5A APPLICATIONS ·Driver for solenoid and motor, series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A IB Base Current-Continuous 1 A Collector Power Dissipation PC 25 W @TC=25? Junction Temperature 150 ? TJ Storage Temperature -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3852 ELECTRICAL CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 60 V Collector-

4.11. 2sc3856.pdf Size:144K _inchange_semiconductor

2SC3858
2SC3858
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3856 DESCRIPTION Ў¤ With TO-3PN package Ў¤ Complement to type 2SA1492 APPLICATIONS Ў¤ Audio and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg Collector-base voltage PARAMETER CHA IN Collector current Base current Collector-emitter voltage Emitter-base voltage E SEM NG Open base TC=25Ўж Open emitter OND IC CONDITIONS TOR UC VALUE 200 180 6 15 4 130 150 -55~150 UNIT V V V A A W Ўж Ўж Open collector Collector power dissipation Junction temperature Storage temperature

4.12. 2sc3857.pdf Size:165K _inchange_semiconductor

2SC3858
2SC3858
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3857 DESCRIPTION Ў¤ With MT-200 package Ў¤ Complement to type 2SA1493 APPLICATIONS Ў¤ Audio and general purpose PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg Collector-base voltage PARAMETER CHA IN Collector current Base current Collector-emitter voltage Emitter-base voltage E SEM NG Open base Open emitter OND IC CONDITIONS TOR UC VALUE 200 200 6 15 5 UNIT V V V A A W Ўж Ўж Open collector Collector power dissipation Junction temperature Storage temperature TC=25Ўж 150 150 -55~150

4.13. 2sc3855.pdf Size:278K _inchange_semiconductor

2SC3858
2SC3858
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3855 DESCRIPTION Ў¤ With TO-3PN package Ў¤ Complement to type 2SA1491 APPLICATIONS Ў¤ Audio and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg Collector-base voltage PARAMETER CONDITIONS Open emitter CHA IN Collector current Base current Collector-emitter voltage Emitter-base voltage E SEM NG Open base OND IC TOR UC VALUE 200 140 6 10 4 UNIT V V V A A W Ўж Ўж Open collector Collector power dissipation Junction temperature Storage temperature TC=25Ўж 100 150 -55~150

4.14. 2sc3854.pdf Size:117K _inchange_semiconductor

2SC3858
2SC3858
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3854 DESCRIPTION Ў¤ With TO-3PN package Ў¤ Complement to type 2SA1490 APPLICATIONS Ў¤ Audio and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg IN Collector-base voltage PARAMETER Collector-emitter voltage Emitter-base voltage ANG CH MIC E SE Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE 160 120 6 8 UNIT V V V A W Ўж Ўж Collector current Collector power dissipation Junction temperature Storage temperature TC=25Ўж 80 150 -55~150

4.15. 2sc3850.pdf Size:119K _inchange_semiconductor

2SC3858
2SC3858
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3850 DESCRIPTION Ў¤ With TO-3PN package Ў¤ Good linearity of hFE Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ For power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB Collector-base voltage PARAMETER CHA IN Collector current Base current Collector-emitter voltage Emitter-base voltage ES NG Open emitter Open base MIC E CONDITIONS OND TOR UC VALUE 500 400 7 20 30 6 UNIT V V V A A A Open collector Collector current-peak Ta=25Ўж PC Collector power dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature 2.5 W 125 150 -55~150 Ўж Ўж

4.16. 2sc3851_2sc3851a.pdf Size:144K _inchange_semiconductor

2SC3858
2SC3858
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3851 2SC3851A DESCRIPTION Ў¤ With TO-220F package Ў¤ Complement to type 2SA1488/1488A APPLICATIONS Ў¤ Audio and PPC high voltage power supply ,and general purpose PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO PARAMETER Collector-base voltage VCEO INC Collector-emitter voltage ES ANG H 2SC3851 2SC3851A 2SC3851 2SC3851A MIC E Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE 80 100 60 80 6 4 1 UNIT V V VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature V A A W Ўж Ўж TC=25Ўж 25 150 -55~150

4.17. 2sc3853.pdf Size:117K _inchange_semiconductor

2SC3858
2SC3858
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3853 DESCRIPTION Ў¤ With TO-3PN package Ў¤ Complement to type 2SA1489 APPLICATIONS Ў¤ Audio and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg IN Collector-base voltage PARAMETER Collector-emitter voltage Emitter-base voltage ANG CH MIC E SE Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE 120 80 6 6 UNIT V V V A W Ўж Ўж Collector current Collector power dissipation Junction temperature Storage temperature TC=25Ўж 60 150 -55~150

See also transistors datasheet: 2SC3851A , 2SC3852 , 2SC3852A , 2SC3853 , 2SC3854 , 2SC3855 , 2SC3856 , 2SC3857 , C945 , 2SC3859 , 2SC385A , 2SC386 , 2SC3860 , 2SC3861 , 2SC3862 , 2SC3863 , 2SC3864 .

Keywords

 2SC3858 Datasheet  2SC3858 Datenblatt  2SC3858 RoHS  2SC3858 Distributor
 2SC3858 Application Notes  2SC3858 Component  2SC3858 Circuit  2SC3858 Schematic
 2SC3858 Equivalent  2SC3858 Cross Reference  2SC3858 Data Sheet  2SC3858 Fiche Technique

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