All Transistors Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
2SC3942
  2SC3942
  2SC3942
 
2SC3942
  2SC3942
  2SC3942
 
2SC3942
  2SC3942
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU505F
BU506 .. BUL54A
BUL54AFI .. BUV26
BUV26A .. BUX67B
BUX67C .. C63
C64 .. CDT1313
CDT1315 .. CIL932
CIL997 .. CMPT3646
CMPT3904 .. CS9011I
CS9012 .. CSB834Y
CSB856 .. CSD1168
CSD1168P .. CZT2222A
CZT2907 .. D38S6
D38S7 .. D44U5
D44U6 .. DCP68-25
DCP69 .. DTA115EE
DTA115EEA .. DTC143E
DTC143ECA .. DXT3906
DXT458P5 .. ECG333
ECG334 .. ES3111
ES3112 .. F4
F5 .. FJPF13009
FJPF3305 .. FMMT4401
FMMT4402 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34/15
GFT34/30 .. GT2765
GT2766 .. HA7520
HA7521 .. HMJE3055T
HMPSA06 .. HUN5130
HUN5131 .. JC548
JC548A .. KF2001
KF2002 .. KRA723T
KRA723U .. KRC655E
KRC655U .. KSA539-O
KSA539-R .. KSC2383-Y
KSC2500 .. KSD1616A
KSD1616A-G .. KSR1110
KSR1111 .. KT3146G-9
KT3146V-9 .. KT605AM
KT605B .. KT8117A
KT8117B .. KT841V
KT842A .. KTA1543T
KTA1544T .. KTC5706L
KTC5707D .. MA117
MA1702 .. MF1164
MF3304 .. MJ6302
MJ6308 .. MJE341K
MJE3439 .. MM3906
MM4000 .. MMBT4274
MMBT4275 .. MMUN2116
MMUN2116L .. MP3691
MP3692 .. MPQ5130
MPQ5131 .. MPS6727
MPS6728 .. MRF316
MRF317 .. MUN5316DW
MUN5316DW1 .. NA61U
NA61W .. NB122E
NB122EH .. NB321E
NB321F .. NPS3641
NPS3642 .. NSS1C201LT1G
NSS1C201MZ4T1G .. OC4405
OC443 .. PBSS302PX
PBSS302PZ .. PE3100
PE4010 .. PN3904
PN3904R .. PZT4401
PZT4403 .. RN1116FT
RN1116MFV .. RN2306
RN2307 .. RS7515
RS7526 .. SD2857
SD2857F .. SFT352
SFT353 .. SQ3960
SQ3960F .. ST83003
ST8509 .. SUR546J
SUR547J .. T3003
T3004 .. TI607A
TI610 .. TIP664
TIP665 .. TN3019A
TN3020 .. TP3905R
TP3906 .. UMC2N
UMC3 .. UN6117S
UN6118 .. ZT112
ZT113 .. ZTX326M
ZTX327 .. ZXTN23015CFH
ZXTN25012EFH .. ZXTPS720MC
 
2SC3942 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SC3942 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC3942

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 40

Maximum collector-base voltage |Ucb|, V: 300

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.1

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz: 140

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 120

Noise Figure, dB: -

Package of 2SC3942 transistor: TO218

2SC3942 Equivalent Transistors - Cross-Reference Search

2SC3942 PDF doc:

1.1. 2sc3942.pdf Size:42K _panasonic

2SC3942
2SC3942
Power Transistors 2SC3942 Silicon NPN triple diffusion planar type For color TV chroma output Unit: mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High collector to emitter VCEO ? 3.1 0.1 Small collector output capacitance Cob Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 +0.2 Absolute Maximum Ratings (TC=25?C) 0.5 0.1 0.8 0.1 Parameter Symbol Ratings Unit 2.54 0.25 Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V 5.08 0.5 1 2 3 Emitter to base voltage VEBO 7 V 1:Base Peak collector current ICP 200 mA 2:Collector 3:Emitter Collector current IC 100 mA TO220 Full Pack Package(a) Collector power TC=25 C 10 PC W dissipation Ta=25 C 2.0 Junction temperature Tj 150 ?C Storage temperature Tstg 55 to +150 ?C Electrical Characteristics (TC=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICEO VCE = 200V, IB = 0 10 A Collector to base voltage VC

1.2. 2sc3942.pdf Size:254K _inchange_semiconductor

2SC3942
2SC3942
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3942 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Low Saturation Voltage APPLICATIONS ·Designed for color TV chroma output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 0.1 A ICM Collector Current-Peak 0.2 A Collector Power Dissipation 10 @ TC=25? PC W Collector Power Dissipation 2 @ Ta=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3942 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Bre

4.1. 2sc3943.pdf Size:43K _panasonic

2SC3942
2SC3942
Power Transistors 2SC3943 Silicon NPN epitaxial planar type For video amplifier Unit: mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Small transition frequency fT ? 3.1 0.1 Small collector output capacitance Cob Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 +0.2 Absolute Maximum Ratings (TC=25?C) 0.5 0.1 0.8 0.1 Parameter Symbol Ratings Unit 2.54 0.25 Collector to base voltage VCBO 110 V VCER 100 V 5.08 0.5 Collector to emitter voltage 1 2 3 VCEO 50 V 1:Base Emitter to base voltage VEBO 3.5 V 2:Collector 3:Emitter Peak collector current ICP 300 mA TO220 Full Pack Package(a) Collector current IC 150 mA Collector power TC=25 C 8 PC W dissipation Ta=25 C 2.0 Junction temperature Tj 150 ?C Storage temperature Tstg 55 to +150 ?C Electrical Characteristics (TC=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICEO VCE = 35V, IB = 0 10 A Collector to base voltage VCBO

4.2. 2sc3944.pdf Size:42K _panasonic

2SC3942
2SC3942
Power Transistors 2SC3944, 2SC3944A Silicon NPN epitaxial planar type For low-frequency driver and high power amplification Complementary to 2SA1535 and 2SA1535A Unit: mm Features 10.0 0.2 4.2 0.2 Satisfactory foward current transfer ratio hFE vs. collector cur- 5.5 0.2 2.7 0.2 rent IC characteristics High transition frequency fT Makes up a complementary pair with 2SA1535 and 2SA1535A, ? 3.1 0.1 which is optimum for the driver-stage of a 60 to 100W output amplifier Full-pack package which can be installed to the heat sink with 1.3 0.2 one screw 1.4 0.1 +0.2 Absolute Maximum Ratings (TC=25?C) 0.5 0.1 0.8 0.1 Parameter Symbol Ratings Unit 2.54 0.25 Collector to 2SC3944 150 VCBO V base voltage 2SC3944A 180 5.08 0.5 1 2 3 Collector to 2SC3944 150 VCEO V 1:Base emitter voltage 2SC3944A 180 2:Collector 3:Emitter Emitter to base voltage VEBO 5 V TO220 Full Pack Package(a) Peak collector current ICP 1.5 A Collector current IC 1 A Collector po

4.3. 2sc3940.pdf Size:47K _panasonic

2SC3942
2SC3942
Transistor 2SC3940, 2SC3940A Silicon NPN epitaxial planer type For low-frequency output amplification and driver amplification Unit: mm Complementary to 2SA1534 and 2SA1534A 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to 2SC3940 30 VCBO V base voltage 2SC3940A 60 +0.15 +0.15 0.45 0.1 0.45 0.1 Collector to 2SC3940 25 1.27 1.27 VCEO V emitter voltage 2SC3940A 50 Emitter to base voltage VEBO 5 V 1:Emitter 1 2 3 Peak collector current ICP 1.5 A 2:Collector 2.54 0.15 Collector current IC 1 A 3:Base TO92NL Package Collector power dissipation PC 1 W Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 20V, IE = 0 0.1 A Collector to base 2SC3940 30 VCBO IC =

4.4. 2sc3941_e.pdf Size:50K _panasonic

2SC3942
2SC3942
Transistor 2SC3941 Silicon NPN triple diffusion planer type For high breakdown voltage general amplification Unit: mm For small TV video output 5.0 0.2 4.0 0.2 Complementary to 2SB1221 Features High collector to emitter voltage VCEO. High transition frequency fT. Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25?C) +0.15 +0.15 Parameter Symbol Ratings Unit 0.45 0.1 0.45 0.1 1.27 1.27 Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO 7 V 1:Emitter 1 2 3 2:Collector Peak collector current ICP 100 mA 2.54 0.15 3:Base Collector current IC 70 mA TO92NL Package Collector power dissipation PC 1 W Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 100V, IE = 0 2 A Collector to emitter voltage VCEO IC = 100 A, IB = 0 300 V Emitter

4.5. 2sc3946.pdf Size:42K _panasonic

2SC3942
2SC3942
Power Transistors 2SC3946 Silicon NPN triple diffusion planar type For color TV horizontal deflection driver Unit: mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High collector to emitter VCEO ? 3.1 0.1 Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 +0.2 Absolute Maximum Ratings (TC=25?C) 0.5 0.1 0.8 0.1 Parameter Symbol Ratings Unit 2.54 0.25 Collector to base voltage VCBO 350 V Collector to emitter voltage VCEO 300 V 5.08 0.5 1 2 3 Emitter to base voltage VEBO 7.5 V 1:Base Peak collector current ICP 400 mA 2:Collector 3:Emitter Collector current IC 200 mA TO220 Full Pack Package(a) Collector power TC=25 C 15 PC W dissipation Ta=25 C 2.0 Junction temperature Tj 150 ?C Storage temperature Tstg 55 to +150 ?C Electrical Characteristics (TC=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 200V, IE = 0 2 A Emitter cutoff

4.6. 2sc3940_e.pdf Size:51K _panasonic

2SC3942
2SC3942
Transistor 2SC3940, 2SC3940A Silicon NPN epitaxial planer type For low-frequency output amplification and driver amplification Unit: mm Complementary to 2SA1534 and 2SA1534A 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to 2SC3940 30 VCBO V base voltage 2SC3940A 60 +0.15 +0.15 0.45 0.1 0.45 0.1 Collector to 2SC3940 25 1.27 1.27 VCEO V emitter voltage 2SC3940A 50 Emitter to base voltage VEBO 5 V 1:Emitter 1 2 3 Peak collector current ICP 1.5 A 2:Collector 2.54 0.15 Collector current IC 1 A 3:Base TO92NL Package Collector power dissipation PC 1 W Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 20V, IE = 0 0.1 A Collector to base 2SC3940 30 VCBO IC =

4.7. 2sc3947.pdf Size:357K _fuji

2SC3942
2SC3942
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

4.8. 2sc3947.pdf Size:149K _jmnic

2SC3942
2SC3942
JMnic Product Specification Silicon NPN Power Transistors 2SC3947 DESCRIPTION ·With TO-3PML package ·High voltage ,high speed APPLICATIONS ·For TV horizontal output and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 850 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 5 A ICM Collector current-peak 8 A IB Base current 2 A PC Collector dissipation TC=25? 70 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon NPN Power Transistors 2SC3947 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=? 500 V V(BR)CBO Collector-base breakd

4.9. 2sc3949.pdf Size:147K _jmnic

2SC3942
2SC3942
JMnic Product Specification Silicon NPN Power Transistors 2SC3949 DESCRIPTION ·With TO-3PML package ·High voltage ,high speed APPLICATIONS ·For TV horizontal output and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 850 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 15 A PC Collector dissipation TC=25? 80 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon NPN Power Transistors 2SC3949 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=? 500 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 850 V V(BR)EBO Emitter-bas

4.10. 2sc3944_2sc3944a.pdf Size:80K _inchange_semiconductor

2SC3942
2SC3942
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3944 2SC3944A DESCRIPTION · ·With TO-220Fa package ·Complement to type 2SA1535/1535A ·High transition frequency APPLICATIONS ·For low-frequency driver and high power amplification ·Optimum for the driver-stage of a 60W to 100W output amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SC3944 150 VCBO Collector-base voltage Open emitter V 2SC3944A 180 2SC3944 150 VCEO Collector-emitter voltage Open base V 2SC3944A 180 VEBO Emitter-base voltage Open collector 5 V IC Collector current 1.0 A ICM Collector current-peak 1.5 A Ta=25? 2.0 PC Collector power dissipation W TC=25? 15 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2S

4.11. 2sc3947.pdf Size:117K _inchange_semiconductor

2SC3942
2SC3942
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3947 DESCRIPTION Ў¤ With TO-3PML package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ For TV horizontal output and power switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage CHA IN Collector current Base current Collector dissipation Collector-emitter voltage ES NG Open emitter Open base MIC E CONDITIONS OND TOR UC MAX 850 500 7 5 8 2 UNIT V V V A A A W Ўж Ўж Emitter-base voltage Open collector Collector current-peak TC=25Ўж 70 150 -55~150 Junction temperature Storage temperature

4.12. 2sc3949.pdf Size:117K _inchange_semiconductor

2SC3942
2SC3942
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3949 DESCRIPTION Ў¤ With TO-3PML package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ For TV horizontal output and power switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage CHA IN Collector current Collector dissipation Collector-emitter voltage ES NG TC=25Ўж Open emitter Open base MIC E CONDITIONS OND TOR UC MAX 850 500 7 15 80 150 -55~150 UNIT V V V A W Ўж Ўж Emitter-base voltage Open collector Junction temperature Storage temperature

See also transistors datasheet: 2SC3936 , 2SC3937 , 2SC3938 , 2SC3939 , 2SC394 , 2SC3940 , 2SC3940A , 2SC3941 , 9014 , 2SC3943 , 2SC3944 , 2SC3944A , 2SC3945 , 2SC3946 , 2SC3947 , 2SC3948 , 2SC3949 .

Keywords

 2SC3942 Datasheet  2SC3942 Datenblatt  2SC3942 RoHS  2SC3942 Distributor
 2SC3942 Application Notes  2SC3942 Component  2SC3942 Circuit  2SC3942 Schematic
 2SC3942 Equivalent  2SC3942 Cross Reference  2SC3942 Data Sheet  2SC3942 Fiche Technique

(C) 2005 All Right reserved Bipolar | | MOSFET | | IGBT | | Manufacturer Sites | | SMD Code | | Packages | | Contact alltransistors[@]gmail.com