2SC3995 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC3995

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 180

Maximum collector-base voltage |Ucb|, V: 1500

Maximum collector-emitter voltage |Uce|, V: 800

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 12

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 10

Noise Figure, dB: -

Package of 2SC3995 transistor: TO264

2SC3995 Equivalent Transistors - Cross-Reference Search

2SC3995 PDF document for downloads:

1.1. 2sc3995.pdf Size:90K _sanyo

Ordering number:EN2508B NPN Triple Diffused Planar Silicon Transistor 2SC3995 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions · High speed (tf=100ns typ). unit:mm · High reliability (adoption of HVP process). 2048B · High breakdown voltage (VCBO=1500V). [2SC3995] · Adoption of MBIT process. 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 12 A Collector Current (Pulse) ICP 30 A Collector Dissipation PC Tc=25?C 180 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=800V, IE=0 10 µA ICES VCE=1500V, RBE=0 1.0 mA Collector-to-Em

4.1. 2sc3998.pdf Size:85K _sanyo

Ordering number:EN2732 NPN Triple Diffused Planar Silicon Transistor 2SC3998 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions · High speed (tf=100ns typ). unit:mm · High breakdown voltage (VCBO=1500V). 2048B · High reliability (adoption of HVP process). [2SC3998] · Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6 1.2 1 : Base 1 2 3 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3PBL Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 25 A Collector Current (Pulse) ICP 50 A Collector Dissipation PC Tc=25?C 250 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICES VCE=1500V 1.0

4.2. 2sc3992.pdf Size:103K _sanyo

Ordering number:EN2235D NPN Triple Diffused Planar Silicon Transistor 2SC3992 800V/12A Switching Regulator Applications Features Package Dimensions · High breakdown voltage, high reliability. unit:mm · Fast switching speed. 2048B · Wide ASO. [2SC3992] · Adoption of MBIT process. 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1100 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 7 V Collector Current IC 12 A Collector Current (Pulse) ICP PW? 300µ s, duty cycle? 10% 30 A Base Current IB 6 A Collector Dissipation PC Tc=25?C 200 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=800V, IE=0 10 µA Emitter Cutoff Current IEBO VEB=5V, IC=0 10 µA hFE1 VCE=5V, I

4.3. 2sc3990.pdf Size:104K _sanyo

Ordering number:EN2234C NPN Triple Diffused Planar Silicon Transistor 2SC3990 500V/35A Switching Regulator Applications Features Package Dimensions · High breakdown voltage, high reliability. unit:mm · Fast switching speed. 2048B · Wide ASO. [2SC3990] · Adoption of MBIT process. 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 800 V Collector-to-Emitter Voltage VCEO 500 V Emitter-to-Base Voltage VEBO 7 V Collector Current IC 35 A Collector Current (Pulse) ICP PW? 300µ s, duty cycle? 10% 50 A Base Current IB 12 A Collector Dissipation PC Tc=25?C 250 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=500V, IE=0 10 µA Emitter Cutoff Current IEBO VEB=5V, IC=0 10 µA hFE1 VCE=5V, I

4.4. 2sc3994.pdf Size:99K _sanyo

Ordering number:EN2828 NPN Triple Diffused Planar Silicon Transistor 2SC3994 800V/25A Switching Regulator Applications Features Package Dimensions · High breakdown voltage, high reliability. unit:mm · Fast switching speed (tf=0.1µ s typ). 2048B · Wide ASO. [2SC3994] · Adoption of MBIT process. 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1100 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 7 V Collector Current IC 25 A Collector Current (Pulse) ICP PW? 300µ s, duty cycle? 10% 60 A Base Current IB 12 A Collector Dissipation PC 300 W Tc=25?C Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=800V, IE=0 10 µA Emitter Cutoff Current IEBO VEB=5V, IC=0 10 µA

4.5. 2sc3997.pdf Size:81K _sanyo

4.6. 2sc3993.pdf Size:106K _sanyo

Ordering number:EN2236D NPN Triple Diffused Planar Silicon Transistor 2SC3993 800V/16A Switching Regulator Applications Features Package Dimensions · High breakdown voltage, high reliability. unit:mm · Fast switching speed. 2048B · Wide ASO. [2SC3993] · Adoption of MBIT process. 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1100 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 7 V Collector Current IC 16 A Collector Current (Pulse) ICP PW? 300µ s, Duty cycle? 10% 40 A Base Current IB 8 A Collector Dissipation PC Tc=25?C 250 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=800V, IE=0 10 µA Emitter Cutoff Current IEBO VEB=5V, IC=0 10 µA hFE1 VCE=5V, I

4.7. 2sc3991.pdf Size:112K _sanyo

Ordering number:EN2836 NPN Triple Diffused Planar Silicon Transistor 2SC3991 500V/50A Switching Regulator Applications Features Package Dimensions · High breakdown voltage, high reliability. unit:mm · Fast switching speed (tf=0.1µ s typ). 2048B · Wide ASO. [2SC3991] · Adoption of MBIT process. 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 800 V Collector-to-Emitter Voltage VCEO 500 V Emitter-to-Base Voltage VEBO 7 V Collector Current IC 50 A Collector Current (Pulse) ICP PW? 300µ s, duty cycle? 10% 70 A Base Current IB 14 A Collector Dissipation PC 3.5 W Tc=25?C 300 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=500V, IE=0 10 µA Emitter Cutoff Current IEBO VEB=5V, IC=0 1

4.8. 2sc3996.pdf Size:91K _sanyo

Ordering number:EN2509C NPN Triple Diffused Planar Silicon Transistor 2SC3996 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions · High speed (tf=100ns typ). unit:mm · High reliability (adoption of HVP process). 2048B · High breakdown voltage (VCBO=1500V). [2SC3996] · Adoption of MBIT process. 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 15 A Collector Current (Pulse) ICP 35 A Collector Dissipation PC Tc=25?C 180 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=800V, IE=0 10 µA ICES VCE=1500V, RBE=0 1.0 mA Collector-to-Em

See also transistors datasheet: 2SC3992K , 2SC3992L , 2SC3992M , 2SC3993 , 2SC3993K , 2SC3993L , 2SC3993M , 2SC3994 , 2N3906 , 2SC3996 , 2SC3997 , 2SC3998 , 2SC3999 , 2SC39A , 2SC40 , 2SC400 , 2SC4000 .

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