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2SC413
  2SC413
  2SC413
 
2SC413
  2SC413
  2SC413
 
2SC413
  2SC413
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BU211
BU212 .. BUF410I
BUF420 .. BUS22CF
BUS23 .. BUW85
BUW86 .. BUY85
BUY86 .. CD9014A
CD9014B .. CIL157B
CIL158 .. CL166C
CL166D .. CPS2550B
CPS4010B .. CSA968AO
CSA968AY .. CSC2688O
CSC2688R .. CTP1111
CTP1320 .. D29J8
D29J9 .. D42CU7
D42CU8 .. D66DS5
D66DS6 .. DT4112
DT4120 .. DTC023JUB
DTC023YEB .. DTL3508
DTL3510 .. ECG2342
ECG2343 .. ED1701N
ED1702 .. ET375
ET378 .. FF2484
FF2906 .. FMG8A
FMG9A .. FPN330
FPN330A .. FXT603
FXT603SM .. GEP2955
GEP3055 .. GET3903
GET3904 .. GSRU15030
GSRU15030A .. GT5149
GT5151 .. HEPS7000
HEPS7001 .. HSE2012
HSE210 .. IR4059
IR4502 .. K2119B
K2120 .. KRA305
KRA305E .. KRC234S
KRC235M .. KRX204E
KRX204U .. KSC1008-Y
KSC1009 .. KSC5028
KSC5028-N .. KSE45H-11
KSE45H-2 .. KT301J
KT301V .. KT361D2
KT361D3 .. KT683D
KT683E .. KT819GM
KT819V .. KT939B
KT939B1 .. KTC3228
KTC3229 .. LBC546
LBC546A .. MD34
MD3409 .. MJ16020
MJ16022 .. MJE15034
MJE15035 .. MJH6287
MJL1302A .. MMBT2222Q
MMBT2222R .. MMCM2484
MMCM2857 .. MP16IA11
MP1711 .. MP8533
MP8534 .. MPS4275
MPS4354 .. MQ2904A
MQ2905 .. MT6003
MT9001 .. NA22YI
NA22YJ .. NB022HJ
NB022HK .. NB221XX
NB221XY .. NKT3710
NKT3711 .. NR461HE
NR461HF .. NTE291
NTE292 .. P416
P416A .. PDTA124TU
PDTA124XE .. PMST5550
PMST5551 .. PTB20152
PTB20156 .. RCP111D
RCP113A .. RN1965CT
RN1965FE .. RN2971FS
RN2972CT .. S9018
S9018T .. SF150
SF194 .. SMBTA64
SMBTA92 .. SRC1219E
SRC1219EF .. STN715
STN724 .. T1686
T1687 .. TD265C
TD366 .. TIP36C
TIP36CA .. TK20C
TK21 .. TN834
TN835 .. TS7990
TS7992 .. UN2212
UN2213 .. US6X3
US6X4 .. ZTX212A
ZTX212AK .. ZTX705
ZTX712 .. ZXTPS720MC
 
2SC413 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SC413 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC413

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 20

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 1.5

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz: 90

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 25

Noise Figure, dB: -

Package of 2SC413 transistor: TO8

2SC413 Equivalent Transistors - Cross-Reference Search

2SC413 PDF doc:

1.1. 2sc4134.pdf Size:106K _sanyo

2SC413
2SC413
Ordering number:ENN2510A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1592/2SC4134 High-Voltage Switching Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers. unit:mm 2045B Features [2SA1592/2SC4134] Adoption FBET, MBIT processes. 6.5 2.3 5.0 High breakdown voltage and large current capacity. 0.5 4 Fast switching speed. Small and slim package permitting 2SA1592/ 2SC4134-applied sets to be made more compact. 0.85 0.7 1.2 0.6 0.5 1 : Base 1 2 3 2 : Collector 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP unit:mm 2044B [2SA1592/2SC4134] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1.2 1 : Base 0 to 0.2 2 : Collector 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircrafts control systems, or other applica

1.2. 2sc4133.pdf Size:89K _sanyo

2SC413
2SC413

1.3. 2sc4135.pdf Size:156K _sanyo

2SC413
2SC413
Ordering number:EN2511A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1593/2SC4135 High-Voltage Switching Applications Applications Package Dimensions Power supplies, relay derivers, lamp drivers. unit:mm 2045B Features [2SA1593/2SC4135] Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Small and slim package permitting 2SA1593/ 2SC4135-applied sets to be made more compact. 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP unit:mm 2044B [2SA1593/2SC4135] 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA ( ) : 2SA1593 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()120 V Collector-to-Emitter Voltage VCEO ()100 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()2 A Collector Current (Pulse) ICP ()3 A Collector Dissipation PC 1 W Tc=25?C 15 W Junction Temperature Tj

1.4. 2sa1593_2sc4135.pdf Size:112K _sanyo

2SC413
2SC413
Ordering number:ENN2511A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1593/2SC4135 High-Voltage Switching Applications Applications Package Dimensions Power supplies, relay derivers, lamp drivers. unit:mm 2045B Features [2SA1593/2SC4135] Adoption of FBET, MBIT processes. 6.5 2.3 5.0 0.5 High breakdown voltage and large current capacity. 4 Fast switching speed. Small and slim package permitting 2SA1593/ 2SC4135-applied sets to be made more compact. 0.85 0.7 1.2 0.6 0.5 1 : Base 1 2 3 2 : Collector 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP unit:mm 2044B [2SA1593/2SC4135] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1.2 1 : Base 0 to 0.2 2 : Collector 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircrafts control systems, or other app

1.5. 2sc4132.pdf Size:63K _rohm

2SC413
2SC413
2SC4132 / 2SD1857 / 2SD2343 Transistors Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 / 2SD2343 Features External dimensions (Units : mm) 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. 2SC4132 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency. (fT = 80MHz) (2) 4) Complements the 2SB1236. (3) (1) Base(Gate) (2) Collector(Drain) ROHM : MPT3 (3) Emitter(Source) EIAJ : SC-62 Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 120 V 2SD1857 Collector-emitter voltage VCEO 120 V 6.8 Emitter-base voltage VEBO 5 V 2.5 IC 2 A Collector current ICP 3 A *1 0.65Max. 0.5 *2 2SC4132 2 Collector power 0.5 W 2SD1857 1 dissipation (1) (2) (3) PC 1.5 2.54 2.54 2SD2343 1.05 0.45 5 W (Tc = 25C) Taping specifications Junction temperature Tj 150 C (1) Emitter Storage temperature Tstg -55~+150 C (2) Collector 1 Single pulse Pw = 10ms (3) Base * ROHM :

1.6. 2sc4132_2sd1857.pdf Size:29K _rohm

2SC413
2SC413
2SC4132 / 2SD1857 Transistors Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 External dimensions (Units : mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. 2SC4132 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency. (fT = 80MHz) (2) 4) Complements the 2SB1236. (3) (1) Base(Gate) (2) Collector(Drain) ROHM : MPT3 (3) Emitter(Source) EIAJ : SC-62 Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V 2SD1857 6.8 Emitter-base voltage VEBO 5 V 2.5 IC 2 A Collector current ICP 3 A *1 0.5 *2 0.65Max. 2SC4132 Collector power PC 2 W dissipation 0.5 2SD1857 1 (1) (2) (3) Junction temperature Tj 150 C 2.54 2.54 Storage temperature Tstg -55~+150 C 1.05 0.45 1 Single pulse Pw = 10ms * Taping specifications (1) Emitter 2 When mounted on a 40 ? 40 ? 0.7mm ceramic board. * (2) Collec

1.7. 2sc4137.pdf Size:18K _rohm

2SC413
2SC413
2SC4137 Transistors Transistors 2SC4774 / 2SC4713K (96-718-C110) (96-183-C115) 306

1.8. 2sc4139.pdf Size:190K _jmnic

2SC413
2SC413
JMnic Product Specification Silicon NPN Power Transistors 2SC4139 DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 15 A ICP Collector current-pulse 30 A IB Base current 5 A PC Collector power dissipation TC=25? 120 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon NPN Power Transistors 2SC4139 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage

1.9. 2sc4130.pdf Size:25K _sanken-ele

2SC413
2SC413
2SC4130 Silicon NPN Epitaxial Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F) Symbol 2SC4130 Symbol Conditions 2SC4130 Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 500 ICBO VCB=500V 100max V A VCEO 400 IEBO VEB=10V 100max V A VEBO 10 V(BR)CEO IC=25mA 400min V V 0.2 o3.3 a IC 7(Pulse14) hFE VCE=4V, IC=3A 10to30 A b IB 2 VCE(sat) IC=3A, IB=0.6A 0.5max A V PC 30(Tc=25C) VBE(sat) IC=3A, IB=0.6A 1.3max W V 0.15 Tj fT VCE=12V, IE=0.5A 15typ 1.35 150 MHz C 0.15 1.35 Tstg 55 to +150 VCB=10V, f=1MHz 50typ COB pF C 0.85+0.2 -0.1 0.45+0.2 2.4 -0.1 0.2 2.54 2.54 Typical Switching Characteristics (Common Emitter) 0.2 2.2 VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g (V) (?) (A) (V) (V) (A) (A) ( s) ( s) ( s) a. Type No. B C E 200 67 3 10 5 0

1.10. 2sc4139.pdf Size:25K _sanken-ele

2SC413
2SC413
2SC4139 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol 2SC4139 Symbol Conditions 2SC4139 Unit Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 VCBO 500 ICBO VCB=500V 100max A V VCEO 400 IEBO VEB=10V 100max A V VEBO 10 V(BR)CEO IC=25mA 400min V V a 0.1 o3.2 IC 15(Pulse30) hFE VCE=4V, IC=8A 10to30 A b VCE(sat) IC=8A, IB=1.6A IB 5 0.5max V A VBE(sat) IC=8A, IB=1.6A PC 120(Tc=25C) 1.3max V 2 W Tj fT VCE=12V, IE=1.5A 10typ MHz 3 150 C -0.1 -0.1 COB VCB=10V, f=1MHz 1.05+0.2 0.65+0.2 Tstg 55 to +150 85typ pF C 0.1 0.1 5.45 5.45 1.4 Typical Switching Characteristics (Common Emitter) B C E VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g (V) (?) (A) (V) (V) (A) (A) ( s) ( s) ( s) a. Type No. b. Lot No. 200 25 8 10 5 0.8

1.11. 2sc4138.pdf Size:24K _sanken-ele

2SC413
2SC413
2SC4138 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol 2SC4138 Unit Symbol Conditions 2SC4138 Unit 0.2 4.8 0.4 15.6 ICBO 0.1 VCBO 500 V VCB=500V 100max A 2.0 9.6 IEBO VCEO 400 V VEB=10V 100max A V(BR)CEO VEBO 10 V IC=25mA 400min V a 0.1 o3.2 IC hFE VCE=4V, IC=6A 10to30 10(Pulse20) A b IB VCE(sat) IC=6A, IB=1.2A 0.5max V 4 A PC VBE(sat) IC=6A, IB=1.2A 1.3max V 80(Tc=25C) W 2 Tj fT VCE=12V, IE=0.7A 10typ MHz 150 C 3 COB VCB=10V, f=1MHz 85typ pF Tstg 55 to +150 C 1.05+0.2 0.65+0.2 -0.1 -0.1 0.1 0.1 5.45 5.45 1.4 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 2.0g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (A) (A) ( s) ( s) ( s) a. Type No. b. Lot No. 200 33.3 6 10 5 0.6

1.12. 2sc4131.pdf Size:25K _sanken-ele

2SC413
2SC413
LOW VCE (sat) 2SC4131 Silicon NPN Epitaxial Planar Transistor Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF) Symbol 2SC4131 Unit Symbol Conditions 2SC4131 Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 100 VCB=100V 10max A V ICBO VCEO 50 IEBO VEB=15V 10max A V VEBO 15 V(BR)CEO IC=25mA 50min V V 0.2 o3.3 IC 15(Pulse25) hFE VCE=1V, IC=5A 60to360 A a b IB 4 VCE(sat) IC=5A, IB=80mA 0.5max V A PC 60(Tc=25C) VBE(sat) IC=5A, IB=80mA 1.2max V W 1.75 0.8 Tj fT VCE=12V, IE=1A 18typ MHz 150 C 2.15 Tstg 55 to +150 COB VCB=10V, f=1MHz 210typ pF C 1.05+0.2 -0.1 0.1 0.1 0.65+0.2 3.35 5.45 5.45 -0.1 Typical Switching Characteristics (Common Emitter) 1.5 4.4 1.5 VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g (V) (?) (A) (V) (V) (A) (A) ( s) ( s) ( s) a. Type No. B C E 20 4 5 10 5 0.08 0.08 0.5typ 2.0

1.13. 2sc4130.pdf Size:114K _inchange_semiconductor

2SC413
2SC413
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4130 DESCRIPTION ·With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 7 A ICM Collector current-peak 14 A PC Collector dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4130 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0 400 V

1.14. 2sc4139.pdf Size:151K _inchange_semiconductor

2SC413
2SC413
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4139 DESCRIPTION Ў¤ With TO-3PN package Ў¤ High voltage Ў¤ High speed switching APPLICATIONS Ў¤ For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg PARAMETER CHA IN Collector current Base current Collector-base voltage Collector-emitter voltage E SEM NG Open base Open emitter OND IC CONDITIONS TOR UC VALUE 500 400 10 15 30 5 UNIT V V V A A A W Ўж Ўж Emitter-base voltage Open collector Collector current-pulse Collector power dissipation Junction temperature Storage temperature TC=25Ўж 120 150 -55~150

1.15. 2sc4138.pdf Size:258K _inchange_semiconductor

2SC413
2SC413
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4138 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 10 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IBB Base Current-Continuous 4 A Collector Power Dissipation PC @ TC=25? 80 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4138 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Brea

1.16. 2sc4131.pdf Size:266K _inchange_semiconductor

2SC413
2SC413
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4131 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC= 5A APPLICATIONS ·Designed for DC-DC converter, emergency lighting inverter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 15 V IC Collector Current-Continuous 15 A ICP Collector Current-Peak 25 A IBB Base Current-Continuous 4 A Collector Power Dissipation PC @ TC=25? 60 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4131 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

See also transistors datasheet: 2SC4122 , 2SC4123 , 2SC4124 , 2SC4125 , 2SC4126 , 2SC4127 , 2SC4128 , 2SC4129 , D882 , 2SC4130 , 2SC4131 , 2SC4132 , 2SC4132N , 2SC4132P , 2SC4132Q , 2SC4132R , 2SC4133 .

Keywords

 2SC413 Datasheet  2SC413 Datenblatt  2SC413 RoHS  2SC413 Distributor
 2SC413 Application Notes  2SC413 Component  2SC413 Circuit  2SC413 Schematic
 2SC413 Equivalent  2SC413 Cross Reference  2SC413 Data Sheet  2SC413 Fiche Technique

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