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2SC413
  2SC413
  2SC413
 
2SC413
  2SC413
  2SC413
 
2SC413
  2SC413
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
2SC413 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SC413 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC413

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 20

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 1.5

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz: 90

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 25

Noise Figure, dB: -

Package of 2SC413 transistor: TO8

2SC413 Equivalent Transistors - Cross-Reference Search

2SC413 PDF doc:

1.1. 2sc4134.pdf Size:106K _sanyo

2SC413
2SC413
Ordering number:ENN2510A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1592/2SC4134 High-Voltage Switching Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers. unit:mm 2045B Features [2SA1592/2SC4134] Adoption FBET, MBIT processes. 6.5 2.3 5.0 High breakdown voltage and large current capacity. 0.5 4 Fast switching speed. Small and slim package permitting 2SA1592/ 2SC4134-applied sets to be made more compact. 0.85 0.7 1.2 0.6 0.5 1 : Base 1 2 3 2 : Collector 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP unit:mm 2044B [2SA1592/2SC4134] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1.2 1 : Base 0 to 0.2 2 : Collector 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircrafts control systems, or other applica

1.2. 2sa1593_2sc4135.pdf Size:112K _sanyo

2SC413
2SC413
Ordering number:ENN2511A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1593/2SC4135 High-Voltage Switching Applications Applications Package Dimensions Power supplies, relay derivers, lamp drivers. unit:mm 2045B Features [2SA1593/2SC4135] Adoption of FBET, MBIT processes. 6.5 2.3 5.0 0.5 High breakdown voltage and large current capacity. 4 Fast switching speed. Small and slim package permitting 2SA1593/ 2SC4135-applied sets to be made more compact. 0.85 0.7 1.2 0.6 0.5 1 : Base 1 2 3 2 : Collector 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP unit:mm 2044B [2SA1593/2SC4135] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1.2 1 : Base 0 to 0.2 2 : Collector 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircrafts control systems, or other app

1.3. 2sc4135.pdf Size:156K _sanyo

2SC413
2SC413
Ordering number:EN2511A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1593/2SC4135 High-Voltage Switching Applications Applications Package Dimensions Power supplies, relay derivers, lamp drivers. unit:mm 2045B Features [2SA1593/2SC4135] Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Small and slim package permitting 2SA1593/ 2SC4135-applied sets to be made more compact. 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP unit:mm 2044B [2SA1593/2SC4135] 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA ( ) : 2SA1593 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()120 V Collector-to-Emitter Voltage VCEO ()100 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()2 A Collector Current (Pulse) ICP ()3 A Collector Dissipation PC 1 W Tc=25?C 15 W Junction Temperature Tj

1.4. 2sc4133.pdf Size:89K _sanyo

2SC413
2SC413

1.5. 2sc4137.pdf Size:18K _rohm

2SC413
2SC413
2SC4137 Transistors Transistors 2SC4774 / 2SC4713K (96-718-C110) (96-183-C115) 306

1.6. 2sc4132_2sd1857.pdf Size:29K _rohm

2SC413
2SC413
2SC4132 / 2SD1857 Transistors Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 External dimensions (Units : mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. 2SC4132 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency. (fT = 80MHz) (2) 4) Complements the 2SB1236. (3) (1) Base(Gate) (2) Collector(Drain) ROHM : MPT3 (3) Emitter(Source) EIAJ : SC-62 Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V 2SD1857 6.8 Emitter-base voltage VEBO 5 V 2.5 IC 2 A Collector current ICP 3 A *1 0.5 *2 0.65Max. 2SC4132 Collector power PC 2 W dissipation 0.5 2SD1857 1 (1) (2) (3) Junction temperature Tj 150 C 2.54 2.54 Storage temperature Tstg -55~+150 C 1.05 0.45 1 Single pulse Pw = 10ms * Taping specifications (1) Emitter 2 When mounted on a 40 ? 40 ? 0.7mm ceramic board. * (2) Collec

1.7. 2sc4132.pdf Size:63K _rohm

2SC413
2SC413
2SC4132 / 2SD1857 / 2SD2343 Transistors Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 / 2SD2343 Features External dimensions (Units : mm) 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. 2SC4132 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency. (fT = 80MHz) (2) 4) Complements the 2SB1236. (3) (1) Base(Gate) (2) Collector(Drain) ROHM : MPT3 (3) Emitter(Source) EIAJ : SC-62 Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 120 V 2SD1857 Collector-emitter voltage VCEO 120 V 6.8 Emitter-base voltage VEBO 5 V 2.5 IC 2 A Collector current ICP 3 A *1 0.65Max. 0.5 *2 2SC4132 2 Collector power 0.5 W 2SD1857 1 dissipation (1) (2) (3) PC 1.5 2.54 2.54 2SD2343 1.05 0.45 5 W (Tc = 25C) Taping specifications Junction temperature Tj 150 C (1) Emitter Storage temperature Tstg -55~+150 C (2) Collector 1 Single pulse Pw = 10ms (3) Base * ROHM :

1.8. 2sc4139.pdf Size:190K _jmnic

2SC413
2SC413
JMnic Product Specification Silicon NPN Power Transistors 2SC4139 DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 15 A ICP Collector current-pulse 30 A IB Base current 5 A PC Collector power dissipation TC=25? 120 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon NPN Power Transistors 2SC4139 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage

1.9. 2sc4130.pdf Size:25K _sanken-ele

2SC413
2SC413
2SC4130 Silicon NPN Epitaxial Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F) Symbol 2SC4130 Symbol Conditions 2SC4130 Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 500 ICBO VCB=500V 100max V A VCEO 400 IEBO VEB=10V 100max V A VEBO 10 V(BR)CEO IC=25mA 400min V V 0.2 o3.3 a IC 7(Pulse14) hFE VCE=4V, IC=3A 10to30 A b IB 2 VCE(sat) IC=3A, IB=0.6A 0.5max A V PC 30(Tc=25C) VBE(sat) IC=3A, IB=0.6A 1.3max W V 0.15 Tj fT VCE=12V, IE=0.5A 15typ 1.35 150 MHz C 0.15 1.35 Tstg 55 to +150 VCB=10V, f=1MHz 50typ COB pF C 0.85+0.2 -0.1 0.45+0.2 2.4 -0.1 0.2 2.54 2.54 Typical Switching Characteristics (Common Emitter) 0.2 2.2 VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g (V) (?) (A) (V) (V) (A) (A) ( s) ( s) ( s) a. Type No. B C E 200 67 3 10 5 0

1.10. 2sc4138.pdf Size:24K _sanken-ele

2SC413
2SC413
2SC4138 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol 2SC4138 Unit Symbol Conditions 2SC4138 Unit 0.2 4.8 0.4 15.6 ICBO 0.1 VCBO 500 V VCB=500V 100max A 2.0 9.6 IEBO VCEO 400 V VEB=10V 100max A V(BR)CEO VEBO 10 V IC=25mA 400min V a 0.1 o3.2 IC hFE VCE=4V, IC=6A 10to30 10(Pulse20) A b IB VCE(sat) IC=6A, IB=1.2A 0.5max V 4 A PC VBE(sat) IC=6A, IB=1.2A 1.3max V 80(Tc=25C) W 2 Tj fT VCE=12V, IE=0.7A 10typ MHz 150 C 3 COB VCB=10V, f=1MHz 85typ pF Tstg 55 to +150 C 1.05+0.2 0.65+0.2 -0.1 -0.1 0.1 0.1 5.45 5.45 1.4 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 2.0g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (A) (A) ( s) ( s) ( s) a. Type No. b. Lot No. 200 33.3 6 10 5 0.6

1.11. 2sc4131.pdf Size:25K _sanken-ele

2SC413
2SC413
LOW VCE (sat) 2SC4131 Silicon NPN Epitaxial Planar Transistor Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF) Symbol 2SC4131 Unit Symbol Conditions 2SC4131 Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 100 VCB=100V 10max A V ICBO VCEO 50 IEBO VEB=15V 10max A V VEBO 15 V(BR)CEO IC=25mA 50min V V 0.2 o3.3 IC 15(Pulse25) hFE VCE=1V, IC=5A 60to360 A a b IB 4 VCE(sat) IC=5A, IB=80mA 0.5max V A PC 60(Tc=25C) VBE(sat) IC=5A, IB=80mA 1.2max V W 1.75 0.8 Tj fT VCE=12V, IE=1A 18typ MHz 150 C 2.15 Tstg 55 to +150 COB VCB=10V, f=1MHz 210typ pF C 1.05+0.2 -0.1 0.1 0.1 0.65+0.2 3.35 5.45 5.45 -0.1 Typical Switching Characteristics (Common Emitter) 1.5 4.4 1.5 VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g (V) (?) (A) (V) (V) (A) (A) ( s) ( s) ( s) a. Type No. B C E 20 4 5 10 5 0.08 0.08 0.5typ 2.0

1.12. 2sc4139.pdf Size:25K _sanken-ele

2SC413
2SC413
2SC4139 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol 2SC4139 Symbol Conditions 2SC4139 Unit Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 VCBO 500 ICBO VCB=500V 100max A V VCEO 400 IEBO VEB=10V 100max A V VEBO 10 V(BR)CEO IC=25mA 400min V V a 0.1 o3.2 IC 15(Pulse30) hFE VCE=4V, IC=8A 10to30 A b VCE(sat) IC=8A, IB=1.6A IB 5 0.5max V A VBE(sat) IC=8A, IB=1.6A PC 120(Tc=25C) 1.3max V 2 W Tj fT VCE=12V, IE=1.5A 10typ MHz 3 150 C -0.1 -0.1 COB VCB=10V, f=1MHz 1.05+0.2 0.65+0.2 Tstg 55 to +150 85typ pF C 0.1 0.1 5.45 5.45 1.4 Typical Switching Characteristics (Common Emitter) B C E VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g (V) (?) (A) (V) (V) (A) (A) ( s) ( s) ( s) a. Type No. b. Lot No. 200 25 8 10 5 0.8

1.13. 2sc4130.pdf Size:114K _inchange_semiconductor

2SC413
2SC413
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4130 DESCRIPTION ·With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 7 A ICM Collector current-peak 14 A PC Collector dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4130 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0 400 V

1.14. 2sc4138.pdf Size:258K _inchange_semiconductor

2SC413
2SC413
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4138 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 10 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IBB Base Current-Continuous 4 A Collector Power Dissipation PC @ TC=25? 80 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4138 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Brea

1.15. 2sc4131.pdf Size:266K _inchange_semiconductor

2SC413
2SC413
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4131 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC= 5A APPLICATIONS ·Designed for DC-DC converter, emergency lighting inverter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 15 V IC Collector Current-Continuous 15 A ICP Collector Current-Peak 25 A IBB Base Current-Continuous 4 A Collector Power Dissipation PC @ TC=25? 60 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4131 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

1.16. 2sc4139.pdf Size:151K _inchange_semiconductor

2SC413
2SC413
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4139 DESCRIPTION Ў¤ With TO-3PN package Ў¤ High voltage Ў¤ High speed switching APPLICATIONS Ў¤ For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg PARAMETER CHA IN Collector current Base current Collector-base voltage Collector-emitter voltage E SEM NG Open base Open emitter OND IC CONDITIONS TOR UC VALUE 500 400 10 15 30 5 UNIT V V V A A A W Ўж Ўж Emitter-base voltage Open collector Collector current-pulse Collector power dissipation Junction temperature Storage temperature TC=25Ўж 120 150 -55~150

See also transistors datasheet: 2SC4122 , 2SC4123 , 2SC4124 , 2SC4125 , 2SC4126 , 2SC4127 , 2SC4128 , 2SC4129 , D882 , 2SC4130 , 2SC4131 , 2SC4132 , 2SC4132N , 2SC4132P , 2SC4132Q , 2SC4132R , 2SC4133 .

Keywords

 2SC413 Datasheet  2SC413 Datenblatt  2SC413 RoHS  2SC413 Distributor
 2SC413 Application Notes  2SC413 Component  2SC413 Circuit  2SC413 Schematic
 2SC413 Equivalent  2SC413 Cross Reference  2SC413 Data Sheet  2SC413 Fiche Technique

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