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2SC413
  2SC413
  2SC413
 
2SC413
  2SC413
  2SC413
 
2SC413
  2SC413
 
 
List
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
2SC413 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SC413 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC413

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 20

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 1.5

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz: 90

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 25

Noise Figure, dB: -

Package of 2SC413 transistor: TO8

2SC413 Equivalent Transistors - Cross-Reference Search

2SC413 PDF doc:

1.1. 2sc4134.pdf Size:106K _sanyo

2SC413
2SC413
Ordering number:ENN2510A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1592/2SC4134 High-Voltage Switching Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers. unit:mm 2045B Features [2SA1592/2SC4134] Adoption FBET, MBIT processes. 6.5 2.3 5.0 High breakdown voltage and large current capacity. 0.5 4 Fast switching speed. Small and slim package permitting 2SA1592/ 2SC4134-applied sets to be made more compact. 0.85 0.7 1.2 0.6 0.5 1 : Base 1 2 3 2 : Collector 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP unit:mm 2044B [2SA1592/2SC4134] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1.2 1 : Base 0 to 0.2 2 : Collector 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircrafts control systems, or other applica

1.2. 2sc4133.pdf Size:89K _sanyo

2SC413
2SC413

1.3. 2sc4135.pdf Size:156K _sanyo

2SC413
2SC413
Ordering number:EN2511A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1593/2SC4135 High-Voltage Switching Applications Applications Package Dimensions Power supplies, relay derivers, lamp drivers. unit:mm 2045B Features [2SA1593/2SC4135] Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Small and slim package permitting 2SA1593/ 2SC4135-applied sets to be made more compact. 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP unit:mm 2044B [2SA1593/2SC4135] 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA ( ) : 2SA1593 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()120 V Collector-to-Emitter Voltage VCEO ()100 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()2 A Collector Current (Pulse) ICP ()3 A Collector Dissipation PC 1 W Tc=25?C 15 W Junction Temperature Tj

1.4. 2sa1593_2sc4135.pdf Size:112K _sanyo

2SC413
2SC413
Ordering number:ENN2511A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1593/2SC4135 High-Voltage Switching Applications Applications Package Dimensions Power supplies, relay derivers, lamp drivers. unit:mm 2045B Features [2SA1593/2SC4135] Adoption of FBET, MBIT processes. 6.5 2.3 5.0 0.5 High breakdown voltage and large current capacity. 4 Fast switching speed. Small and slim package permitting 2SA1593/ 2SC4135-applied sets to be made more compact. 0.85 0.7 1.2 0.6 0.5 1 : Base 1 2 3 2 : Collector 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP unit:mm 2044B [2SA1593/2SC4135] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1.2 1 : Base 0 to 0.2 2 : Collector 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircrafts control systems, or other app

1.5. 2sc4132.pdf Size:63K _rohm

2SC413
2SC413
2SC4132 / 2SD1857 / 2SD2343 Transistors Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 / 2SD2343 Features External dimensions (Units : mm) 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. 2SC4132 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency. (fT = 80MHz) (2) 4) Complements the 2SB1236. (3) (1) Base(Gate) (2) Collector(Drain) ROHM : MPT3 (3) Emitter(Source) EIAJ : SC-62 Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 120 V 2SD1857 Collector-emitter voltage VCEO 120 V 6.8 Emitter-base voltage VEBO 5 V 2.5 IC 2 A Collector current ICP 3 A *1 0.65Max. 0.5 *2 2SC4132 2 Collector power 0.5 W 2SD1857 1 dissipation (1) (2) (3) PC 1.5 2.54 2.54 2SD2343 1.05 0.45 5 W (Tc = 25C) Taping specifications Junction temperature Tj 150 C (1) Emitter Storage temperature Tstg -55~+150 C (2) Collector 1 Single pulse Pw = 10ms (3) Base * ROHM :

1.6. 2sc4132_2sd1857.pdf Size:29K _rohm

2SC413
2SC413
2SC4132 / 2SD1857 Transistors Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 External dimensions (Units : mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. 2SC4132 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency. (fT = 80MHz) (2) 4) Complements the 2SB1236. (3) (1) Base(Gate) (2) Collector(Drain) ROHM : MPT3 (3) Emitter(Source) EIAJ : SC-62 Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V 2SD1857 6.8 Emitter-base voltage VEBO 5 V 2.5 IC 2 A Collector current ICP 3 A *1 0.5 *2 0.65Max. 2SC4132 Collector power PC 2 W dissipation 0.5 2SD1857 1 (1) (2) (3) Junction temperature Tj 150 C 2.54 2.54 Storage temperature Tstg -55~+150 C 1.05 0.45 1 Single pulse Pw = 10ms * Taping specifications (1) Emitter 2 When mounted on a 40 ? 40 ? 0.7mm ceramic board. * (2) Collec

1.7. 2sc4137.pdf Size:18K _rohm

2SC413
2SC413
2SC4137 Transistors Transistors 2SC4774 / 2SC4713K (96-718-C110) (96-183-C115) 306

1.8. 2sc4130.pdf Size:25K _sanken-ele

2SC413
2SC413
2SC4130 Silicon NPN Epitaxial Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F) Symbol 2SC4130 Symbol Conditions 2SC4130 Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 500 ICBO VCB=500V 100max V A VCEO 400 IEBO VEB=10V 100max V A VEBO 10 V(BR)CEO IC=25mA 400min V V 0.2 o3.3 a IC 7(Pulse14) hFE VCE=4V, IC=3A 10to30 A b IB 2 VCE(sat) IC=3A, IB=0.6A 0.5max A V PC 30(Tc=25C) VBE(sat) IC=3A, IB=0.6A 1.3max W V 0.15 Tj fT VCE=12V, IE=0.5A 15typ 1.35 150 MHz C 0.15 1.35 Tstg 55 to +150 VCB=10V, f=1MHz 50typ COB pF C 0.85+0.2 -0.1 0.45+0.2 2.4 -0.1 0.2 2.54 2.54 Typical Switching Characteristics (Common Emitter) 0.2 2.2 VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g (V) (?) (A) (V) (V) (A) (A) ( s) ( s) ( s) a. Type No. B C E 200 67 3 10 5 0

1.9. 2sc4139.pdf Size:25K _sanken-ele

2SC413
2SC413
2SC4139 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol 2SC4139 Symbol Conditions 2SC4139 Unit Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 VCBO 500 ICBO VCB=500V 100max A V VCEO 400 IEBO VEB=10V 100max A V VEBO 10 V(BR)CEO IC=25mA 400min V V a 0.1 o3.2 IC 15(Pulse30) hFE VCE=4V, IC=8A 10to30 A b VCE(sat) IC=8A, IB=1.6A IB 5 0.5max V A VBE(sat) IC=8A, IB=1.6A PC 120(Tc=25C) 1.3max V 2 W Tj fT VCE=12V, IE=1.5A 10typ MHz 3 150 C -0.1 -0.1 COB VCB=10V, f=1MHz 1.05+0.2 0.65+0.2 Tstg 55 to +150 85typ pF C 0.1 0.1 5.45 5.45 1.4 Typical Switching Characteristics (Common Emitter) B C E VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g (V) (?) (A) (V) (V) (A) (A) ( s) ( s) ( s) a. Type No. b. Lot No. 200 25 8 10 5 0.8

1.10. 2sc4138.pdf Size:24K _sanken-ele

2SC413
2SC413
2SC4138 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol 2SC4138 Unit Symbol Conditions 2SC4138 Unit 0.2 4.8 0.4 15.6 ICBO 0.1 VCBO 500 V VCB=500V 100max A 2.0 9.6 IEBO VCEO 400 V VEB=10V 100max A V(BR)CEO VEBO 10 V IC=25mA 400min V a 0.1 o3.2 IC hFE VCE=4V, IC=6A 10to30 10(Pulse20) A b IB VCE(sat) IC=6A, IB=1.2A 0.5max V 4 A PC VBE(sat) IC=6A, IB=1.2A 1.3max V 80(Tc=25C) W 2 Tj fT VCE=12V, IE=0.7A 10typ MHz 150 C 3 COB VCB=10V, f=1MHz 85typ pF Tstg 55 to +150 C 1.05+0.2 0.65+0.2 -0.1 -0.1 0.1 0.1 5.45 5.45 1.4 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 2.0g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (A) (A) ( s) ( s) ( s) a. Type No. b. Lot No. 200 33.3 6 10 5 0.6

1.11. 2sc4131.pdf Size:25K _sanken-ele

2SC413
2SC413
LOW VCE (sat) 2SC4131 Silicon NPN Epitaxial Planar Transistor Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF) Symbol 2SC4131 Unit Symbol Conditions 2SC4131 Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 100 VCB=100V 10max A V ICBO VCEO 50 IEBO VEB=15V 10max A V VEBO 15 V(BR)CEO IC=25mA 50min V V 0.2 o3.3 IC 15(Pulse25) hFE VCE=1V, IC=5A 60to360 A a b IB 4 VCE(sat) IC=5A, IB=80mA 0.5max V A PC 60(Tc=25C) VBE(sat) IC=5A, IB=80mA 1.2max V W 1.75 0.8 Tj fT VCE=12V, IE=1A 18typ MHz 150 C 2.15 Tstg 55 to +150 COB VCB=10V, f=1MHz 210typ pF C 1.05+0.2 -0.1 0.1 0.1 0.65+0.2 3.35 5.45 5.45 -0.1 Typical Switching Characteristics (Common Emitter) 1.5 4.4 1.5 VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g (V) (?) (A) (V) (V) (A) (A) ( s) ( s) ( s) a. Type No. B C E 20 4 5 10 5 0.08 0.08 0.5typ 2.0

1.12. 2sc4130.pdf Size:114K _inchange_semiconductor

2SC413
2SC413
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4130 DESCRIPTION ·With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 7 A ICM Collector current-peak 14 A PC Collector dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4130 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0 400 V

1.13. 2sc4139.pdf Size:151K _inchange_semiconductor

2SC413
2SC413
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4139 DESCRIPTION Ў¤ With TO-3PN package Ў¤ High voltage Ў¤ High speed switching APPLICATIONS Ў¤ For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg PARAMETER CHA IN Collector current Base current Collector-base voltage Collector-emitter voltage E SEM NG Open base Open emitter OND IC CONDITIONS TOR UC VALUE 500 400 10 15 30 5 UNIT V V V A A A W Ўж Ўж Emitter-base voltage Open collector Collector current-pulse Collector power dissipation Junction temperature Storage temperature TC=25Ўж 120 150 -55~150

1.14. 2sc4138.pdf Size:258K _inchange_semiconductor

2SC413
2SC413
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4138 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 10 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IBB Base Current-Continuous 4 A Collector Power Dissipation PC @ TC=25? 80 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4138 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Brea

1.15. 2sc4131.pdf Size:266K _inchange_semiconductor

2SC413
2SC413
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4131 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC= 5A APPLICATIONS ·Designed for DC-DC converter, emergency lighting inverter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 15 V IC Collector Current-Continuous 15 A ICP Collector Current-Peak 25 A IBB Base Current-Continuous 4 A Collector Power Dissipation PC @ TC=25? 60 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4131 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

See also transistors datasheet: 2SC4122 , 2SC4123 , 2SC4124 , 2SC4125 , 2SC4126 , 2SC4127 , 2SC4128 , 2SC4129 , D882 , 2SC4130 , 2SC4131 , 2SC4132 , 2SC4132N , 2SC4132P , 2SC4132Q , 2SC4132R , 2SC4133 .

Keywords

 2SC413 Datasheet  2SC413 Datenblatt  2SC413 RoHS  2SC413 Distributor
 2SC413 Application Notes  2SC413 Component  2SC413 Circuit  2SC413 Schematic
 2SC413 Equivalent  2SC413 Cross Reference  2SC413 Data Sheet  2SC413 Fiche Technique

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