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2SC413
  2SC413
  2SC413
  2SC413
 
2SC413
  2SC413
  2SC413
  2SC413
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586G
2SA1586O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229O .. 2SC2434
2SC2435 .. 2SC2668Y
2SC2669 .. 2SC2859O
2SC2859Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC400M
2SC400O .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC507R
2SC507Y .. 2SC536SP
2SC537 .. 2SC5813
2SC5819 .. 2SC690
2SC690M .. 2SC89H
2SC90 .. 2SD1063S
2SD1064 .. 2SD1252
2SD1252A .. 2SD1442
2SD1442A .. 2SD1662
2SD1663 .. 2SD1848
2SD1849 .. 2SD2095
2SD2096 .. 2SD2439O
2SD2439P .. 2SD362R
2SD363 .. 2SD588A
2SD589 .. 2SD786
2SD787 .. 2STA2510
2STC2510 .. 40221
40222 .. 40630
40631 .. A177
A178 .. AC556K
AC558 .. AF129
AF130 .. ASY70
ASY70IV .. BC149B
BC149C .. BC237B-92
BC237BP .. BC337-25
BC337-40 .. BC477QF
BC477VI .. BC807-25
BC807-25L .. BC858CLT1
BC858CR .. BCV63
BCV63B .. BCW94K
BCW94KA .. BCY65EPA
BCY65EPB .. BD226-16
BD226-6 .. BD370B-16
BD370B-25 .. BD590
BD591 .. BD940F
BD941 .. BDV93
BDV94 .. BDX85A
BDX85B .. BF225JF
BF226 .. BF422
BF422A .. BF847
BF848 .. BFQ268
BFQ27 .. BFS33P
BFS34 .. BFV88
BFV88A .. BFY69V
BFY69W .. BLX88
BLX89 .. BSS72
BSS72S .. BSX46-6
BSX47 .. BTB1580L3
BTB1580M3 .. BU1508AX
BU1508DX .. BUD48A
BUD48AI .. BUS12B
BUS13 .. BUW46
BUW48 .. BUY64
BUY65 .. CD5918
CD5919 .. CI3397
CI3402 .. CL066P
CL100 .. CPH5517
CPH5518 .. CSA733
CSA733K .. CSC2274D
CSC2274E .. CT764
CT765 .. D29A4
D29A5 .. D41E2
D41E3 .. D62T6560
D62T7030 .. DT1311
DT1312 .. DTB143EC
DTB143EK .. DTL1654
DTL1655 .. ECG228A
ECG229 .. ED1401C
ED1401D .. ESM738T
ESM749 .. FE1718D
FE1718E .. FMA7A
FMA8A .. FN1F4N
FN1F4Z .. FXT3906SM
FXT449 .. GD362
GD363 .. GES929
GES93 .. GS9018
GS9018D .. GT402B
GT402D .. HEPS0015
HEPS0016 .. HSB649A
HSB649T .. IMBT3904
IMBT3905 .. JE9143A
JE9143B .. KRA111M
KRA111S .. KRC104
KRC104M .. KRC853F
KRC853U .. KSB1366
KSB1366G .. KSC3125
KSC3158 .. KSD569O
KSD569R .. KT203A
KT203AM .. KT336G
KT336V .. KT630G
KT630V .. KT815B9
KT815G .. KT9115A
KT9116A .. KTC1020
KTC1026 .. KTN2369
KTN2369A .. MCH4017
MCH4020 .. MJ11017
MJ11018 .. MJD50TF
MJD5731 .. MJE701T
MJE702 .. MMBC1623L3
MMBC1623L4 .. MMBT8599
MMBT9012 .. MP1530
MP1530A .. MP5142
MP5143 .. MPS3405
MPS3414 .. MPSL01
MPSL01A .. MSB1218ART1
MSB709 .. NA12HY
NA21E .. NB014EY
NB014EZ .. NB212Z
NB212ZG .. NKT142
NKT143 .. NPS5816
NPS5855 .. NTE2332
NTE2334 .. OC82DM
OC83 .. PBSS5350SS
PBSS5350T .. PMBT3905
PMBT3906 .. PT3151A
PT3501 .. RCA1B04
RCA1B05 .. RN1703
RN1703JE .. RN2902FE
RN2902FS .. S1807
S1808 .. SDT9308
SDT9309 .. SK1641
SK2604A .. SRA2219UF
SRC1201 .. STC5649
STC5650 .. SZD5564
SZD5706 .. TA2606
TA2616 .. TIP146T
TIP147 .. TIS51
TIS52 .. TN4140
TN4141 .. TPC6504
TPC6601 .. UN1115Q
UN1115R .. UN921K
UN921L .. ZT60
ZT600 .. ZTX451
ZTX452 .. ZXTP749F
ZXTPS717MC .. ZXTPS720MC
 
2SC413 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SC413 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC413

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 20

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 1.5

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz: 90

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 25

Noise Figure, dB: -

Package of 2SC413 transistor: TO8

2SC413 Equivalent Transistors - Cross-Reference Search

2SC413 PDF doc:

1.1. 2sc4134.pdf Size:106K _sanyo

2SC413
2SC413
Ordering number:ENN2510A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1592/2SC4134 High-Voltage Switching Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers. unit:mm 2045B Features [2SA1592/2SC4134] Adoption FBET, MBIT processes. 6.5 2.3 5.0 High breakdown voltage and large current capacity. 0.5 4 Fast switching speed. Small and slim package permitting 2SA1592/ 2SC4134-applied sets to be made more compact. 0.85 0.7 1.2 0.6 0.5 1 : Base 1 2 3 2 : Collector 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP unit:mm 2044B [2SA1592/2SC4134] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1.2 1 : Base 0 to 0.2 2 : Collector 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircrafts control systems, or other applica

1.2. 2sa1593_2sc4135.pdf Size:112K _sanyo

2SC413
2SC413
Ordering number:ENN2511A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1593/2SC4135 High-Voltage Switching Applications Applications Package Dimensions Power supplies, relay derivers, lamp drivers. unit:mm 2045B Features [2SA1593/2SC4135] Adoption of FBET, MBIT processes. 6.5 2.3 5.0 0.5 High breakdown voltage and large current capacity. 4 Fast switching speed. Small and slim package permitting 2SA1593/ 2SC4135-applied sets to be made more compact. 0.85 0.7 1.2 0.6 0.5 1 : Base 1 2 3 2 : Collector 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP unit:mm 2044B [2SA1593/2SC4135] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1.2 1 : Base 0 to 0.2 2 : Collector 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircrafts control systems, or other app

1.3. 2sc4135.pdf Size:156K _sanyo

2SC413
2SC413
Ordering number:EN2511A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1593/2SC4135 High-Voltage Switching Applications Applications Package Dimensions Power supplies, relay derivers, lamp drivers. unit:mm 2045B Features [2SA1593/2SC4135] Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Small and slim package permitting 2SA1593/ 2SC4135-applied sets to be made more compact. 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP unit:mm 2044B [2SA1593/2SC4135] 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA ( ) : 2SA1593 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()120 V Collector-to-Emitter Voltage VCEO ()100 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()2 A Collector Current (Pulse) ICP ()3 A Collector Dissipation PC 1 W Tc=25?C 15 W Junction Temperature Tj

1.4. 2sc4133.pdf Size:89K _sanyo

2SC413
2SC413

1.5. 2sc4137.pdf Size:18K _rohm

2SC413
2SC413
2SC4137 Transistors Transistors 2SC4774 / 2SC4713K (96-718-C110) (96-183-C115) 306

1.6. 2sc4132_2sd1857.pdf Size:29K _rohm

2SC413
2SC413
2SC4132 / 2SD1857 Transistors Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 External dimensions (Units : mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. 2SC4132 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency. (fT = 80MHz) (2) 4) Complements the 2SB1236. (3) (1) Base(Gate) (2) Collector(Drain) ROHM : MPT3 (3) Emitter(Source) EIAJ : SC-62 Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V 2SD1857 6.8 Emitter-base voltage VEBO 5 V 2.5 IC 2 A Collector current ICP 3 A *1 0.5 *2 0.65Max. 2SC4132 Collector power PC 2 W dissipation 0.5 2SD1857 1 (1) (2) (3) Junction temperature Tj 150 C 2.54 2.54 Storage temperature Tstg -55~+150 C 1.05 0.45 1 Single pulse Pw = 10ms * Taping specifications (1) Emitter 2 When mounted on a 40 ? 40 ? 0.7mm ceramic board. * (2) Collec

1.7. 2sc4132.pdf Size:63K _rohm

2SC413
2SC413
2SC4132 / 2SD1857 / 2SD2343 Transistors Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 / 2SD2343 Features External dimensions (Units : mm) 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. 2SC4132 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency. (fT = 80MHz) (2) 4) Complements the 2SB1236. (3) (1) Base(Gate) (2) Collector(Drain) ROHM : MPT3 (3) Emitter(Source) EIAJ : SC-62 Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 120 V 2SD1857 Collector-emitter voltage VCEO 120 V 6.8 Emitter-base voltage VEBO 5 V 2.5 IC 2 A Collector current ICP 3 A *1 0.65Max. 0.5 *2 2SC4132 2 Collector power 0.5 W 2SD1857 1 dissipation (1) (2) (3) PC 1.5 2.54 2.54 2SD2343 1.05 0.45 5 W (Tc = 25C) Taping specifications Junction temperature Tj 150 C (1) Emitter Storage temperature Tstg -55~+150 C (2) Collector 1 Single pulse Pw = 10ms (3) Base * ROHM :

1.8. 2sc4139.pdf Size:190K _jmnic

2SC413
2SC413
JMnic Product Specification Silicon NPN Power Transistors 2SC4139 DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 15 A ICP Collector current-pulse 30 A IB Base current 5 A PC Collector power dissipation TC=25? 120 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon NPN Power Transistors 2SC4139 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage

1.9. 2sc4130.pdf Size:25K _sanken-ele

2SC413
2SC413
2SC4130 Silicon NPN Epitaxial Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F) Symbol 2SC4130 Symbol Conditions 2SC4130 Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 500 ICBO VCB=500V 100max V A VCEO 400 IEBO VEB=10V 100max V A VEBO 10 V(BR)CEO IC=25mA 400min V V 0.2 o3.3 a IC 7(Pulse14) hFE VCE=4V, IC=3A 10to30 A b IB 2 VCE(sat) IC=3A, IB=0.6A 0.5max A V PC 30(Tc=25C) VBE(sat) IC=3A, IB=0.6A 1.3max W V 0.15 Tj fT VCE=12V, IE=0.5A 15typ 1.35 150 MHz C 0.15 1.35 Tstg 55 to +150 VCB=10V, f=1MHz 50typ COB pF C 0.85+0.2 -0.1 0.45+0.2 2.4 -0.1 0.2 2.54 2.54 Typical Switching Characteristics (Common Emitter) 0.2 2.2 VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g (V) (?) (A) (V) (V) (A) (A) ( s) ( s) ( s) a. Type No. B C E 200 67 3 10 5 0

1.10. 2sc4138.pdf Size:24K _sanken-ele

2SC413
2SC413
2SC4138 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol 2SC4138 Unit Symbol Conditions 2SC4138 Unit 0.2 4.8 0.4 15.6 ICBO 0.1 VCBO 500 V VCB=500V 100max A 2.0 9.6 IEBO VCEO 400 V VEB=10V 100max A V(BR)CEO VEBO 10 V IC=25mA 400min V a 0.1 o3.2 IC hFE VCE=4V, IC=6A 10to30 10(Pulse20) A b IB VCE(sat) IC=6A, IB=1.2A 0.5max V 4 A PC VBE(sat) IC=6A, IB=1.2A 1.3max V 80(Tc=25C) W 2 Tj fT VCE=12V, IE=0.7A 10typ MHz 150 C 3 COB VCB=10V, f=1MHz 85typ pF Tstg 55 to +150 C 1.05+0.2 0.65+0.2 -0.1 -0.1 0.1 0.1 5.45 5.45 1.4 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 2.0g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (A) (A) ( s) ( s) ( s) a. Type No. b. Lot No. 200 33.3 6 10 5 0.6

1.11. 2sc4131.pdf Size:25K _sanken-ele

2SC413
2SC413
LOW VCE (sat) 2SC4131 Silicon NPN Epitaxial Planar Transistor Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF) Symbol 2SC4131 Unit Symbol Conditions 2SC4131 Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 100 VCB=100V 10max A V ICBO VCEO 50 IEBO VEB=15V 10max A V VEBO 15 V(BR)CEO IC=25mA 50min V V 0.2 o3.3 IC 15(Pulse25) hFE VCE=1V, IC=5A 60to360 A a b IB 4 VCE(sat) IC=5A, IB=80mA 0.5max V A PC 60(Tc=25C) VBE(sat) IC=5A, IB=80mA 1.2max V W 1.75 0.8 Tj fT VCE=12V, IE=1A 18typ MHz 150 C 2.15 Tstg 55 to +150 COB VCB=10V, f=1MHz 210typ pF C 1.05+0.2 -0.1 0.1 0.1 0.65+0.2 3.35 5.45 5.45 -0.1 Typical Switching Characteristics (Common Emitter) 1.5 4.4 1.5 VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g (V) (?) (A) (V) (V) (A) (A) ( s) ( s) ( s) a. Type No. B C E 20 4 5 10 5 0.08 0.08 0.5typ 2.0

1.12. 2sc4139.pdf Size:25K _sanken-ele

2SC413
2SC413
2SC4139 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol 2SC4139 Symbol Conditions 2SC4139 Unit Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 VCBO 500 ICBO VCB=500V 100max A V VCEO 400 IEBO VEB=10V 100max A V VEBO 10 V(BR)CEO IC=25mA 400min V V a 0.1 o3.2 IC 15(Pulse30) hFE VCE=4V, IC=8A 10to30 A b VCE(sat) IC=8A, IB=1.6A IB 5 0.5max V A VBE(sat) IC=8A, IB=1.6A PC 120(Tc=25C) 1.3max V 2 W Tj fT VCE=12V, IE=1.5A 10typ MHz 3 150 C -0.1 -0.1 COB VCB=10V, f=1MHz 1.05+0.2 0.65+0.2 Tstg 55 to +150 85typ pF C 0.1 0.1 5.45 5.45 1.4 Typical Switching Characteristics (Common Emitter) B C E VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g (V) (?) (A) (V) (V) (A) (A) ( s) ( s) ( s) a. Type No. b. Lot No. 200 25 8 10 5 0.8

1.13. 2sc4130.pdf Size:114K _inchange_semiconductor

2SC413
2SC413
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4130 DESCRIPTION ·With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 7 A ICM Collector current-peak 14 A PC Collector dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4130 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0 400 V

1.14. 2sc4138.pdf Size:258K _inchange_semiconductor

2SC413
2SC413
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4138 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 10 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IBB Base Current-Continuous 4 A Collector Power Dissipation PC @ TC=25? 80 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4138 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Brea

1.15. 2sc4131.pdf Size:266K _inchange_semiconductor

2SC413
2SC413
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4131 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC= 5A APPLICATIONS ·Designed for DC-DC converter, emergency lighting inverter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 15 V IC Collector Current-Continuous 15 A ICP Collector Current-Peak 25 A IBB Base Current-Continuous 4 A Collector Power Dissipation PC @ TC=25? 60 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4131 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

1.16. 2sc4139.pdf Size:151K _inchange_semiconductor

2SC413
2SC413
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4139 DESCRIPTION Ў¤ With TO-3PN package Ў¤ High voltage Ў¤ High speed switching APPLICATIONS Ў¤ For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg PARAMETER CHA IN Collector current Base current Collector-base voltage Collector-emitter voltage E SEM NG Open base Open emitter OND IC CONDITIONS TOR UC VALUE 500 400 10 15 30 5 UNIT V V V A A A W Ўж Ўж Emitter-base voltage Open collector Collector current-pulse Collector power dissipation Junction temperature Storage temperature TC=25Ўж 120 150 -55~150

See also transistors datasheet: 2SC4122 , 2SC4123 , 2SC4124 , 2SC4125 , 2SC4126 , 2SC4127 , 2SC4128 , 2SC4129 , D882 , 2SC4130 , 2SC4131 , 2SC4132 , 2SC4132N , 2SC4132P , 2SC4132Q , 2SC4132R , 2SC4133 .

Keywords

 2SC413 Datasheet  2SC413 Datenblatt  2SC413 RoHS  2SC413 Distributor
 2SC413 Application Notes  2SC413 Component  2SC413 Circuit  2SC413 Schematic
 2SC413 Equivalent  2SC413 Cross Reference  2SC413 Data Sheet  2SC413 Fiche Technique

 

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