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2SC413 Transistor (IC) Datasheet. Cross Reference Search. 2SC413 Equivalent

Type Designator: 2SC413

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 20

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 1.5

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz: 90

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 25

Noise Figure, dB: -

Package of 2SC413 transistor: TO8

2SC413 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC413 PDF:

1.1. 2sa1593_2sc4135.pdf Size:112K _sanyo

2SC413
2SC413

Ordering number:ENN2511A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1593/2SC4135 High-Voltage Switching Applications Applications Package Dimensions Power supplies, relay derivers, lamp drivers. unit:mm 2045B Features [2SA1593/2SC4135] Adoption of FBET, MBIT processes. 6.5 2.3 5.0 0.5 High breakdown voltage and large current capacity. 4 Fast switching speed. Smal

1.2. 2sc4133.pdf Size:89K _sanyo

2SC413
2SC413

1.3. 2sc4134.pdf Size:106K _sanyo

2SC413
2SC413

Ordering number:ENN2510A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1592/2SC4134 High-Voltage Switching Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers. unit:mm 2045B Features [2SA1592/2SC4134] Adoption FBET, MBIT processes. 6.5 2.3 5.0 High breakdown voltage and large current capacity. 0.5 4 Fast switching speed. Small an

1.4. 2sc4135.pdf Size:156K _sanyo

2SC413
2SC413

Ordering number:EN2511A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1593/2SC4135 High-Voltage Switching Applications Applications Package Dimensions Power supplies, relay derivers, lamp drivers. unit:mm 2045B Features [2SA1593/2SC4135] Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Small and slim package perm

1.5. 2sc4132_2sd1857.pdf Size:29K _rohm

2SC413
2SC413

2SC4132 / 2SD1857 Transistors Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 External dimensions (Units : mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. 2SC4132 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency. (fT = 80MHz) (2) 4) Complements the 2SB1236. (3) (1) Base(Gate) (2) Collector(Drain) ROHM

1.6. 2sc4132.pdf Size:63K _rohm

2SC413
2SC413

2SC4132 / 2SD1857 / 2SD2343 Transistors Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 / 2SD2343 Features External dimensions (Units : mm) 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. 2SC4132 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency. (fT = 80MHz) (2) 4) Complements the 2SB1236. (3) (1) Base(Gate) (2) Collector(D

1.7. 2sc4137.pdf Size:18K _rohm

2SC413
2SC413

2SC4137 Transistors Transistors 2SC4774 / 2SC4713K (96-718-C110) (96-183-C115) 306

1.8. 2sc4139.pdf Size:190K _jmnic

2SC413
2SC413

JMnic Product Specification Silicon NPN Power Transistors 2SC4139 DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=?)

1.9. 2sc4139.pdf Size:25K _sanken-ele

2SC413
2SC413

2SC4139 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol 2SC4139 Symbol Conditions 2SC4139 Unit Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 VCBO 500 ICBO VCB=500V 100max A V VC

1.10. 2sc4138.pdf Size:24K _sanken-ele

2SC413
2SC413

2SC4138 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol 2SC4138 Unit Symbol Conditions 2SC4138 Unit 0.2 4.8 0.4 15.6 ICBO 0.1 VCBO 500 V VCB=500V 100max A 2.0 9.6 IEB

1.11. 2sc4131.pdf Size:25K _sanken-ele

2SC413
2SC413

LOW VCE (sat) 2SC4131 Silicon NPN Epitaxial Planar Transistor Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF) Symbol 2SC4131 Unit Symbol Conditions 2SC4131 Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 100 VCB=100V 10max A V ICBO VCEO 50 IEBO VEB=15V 10ma

1.12. 2sc4130.pdf Size:25K _sanken-ele

2SC413
2SC413

2SC4130 Silicon NPN Epitaxial Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F) Symbol 2SC4130 Symbol Conditions 2SC4130 Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 500 ICBO VCB=500V 100max V A VCEO 400 IEB

1.13. 2sc4139.pdf Size:151K _inchange_semiconductor

2SC413
2SC413

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4139 DESCRIPTION Ў¤ With TO-3PN package Ў¤ High voltage Ў¤ High speed switching APPLICATIONS Ў¤ For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum rat

1.14. 2sc4138.pdf Size:258K _inchange_semiconductor

2SC413
2SC413

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4138 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Vo

1.15. 2sc4131.pdf Size:266K _inchange_semiconductor

2SC413
2SC413

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4131 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC= 5A APPLICATIONS ·Designed for DC-DC converter, emergency lighting inverter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PA

1.16. 2sc4130.pdf Size:114K _inchange_semiconductor

2SC413
2SC413

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4130 DESCRIPTION ·With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PA

See also transistors datasheet: 2SC4122 , 2SC4123 , 2SC4124 , 2SC4125 , 2SC4126 , 2SC4127 , 2SC4128 , 2SC4129 , D882 , 2SC4130 , 2SC4131 , 2SC4132 , 2SC4132N , 2SC4132P , 2SC4132Q , 2SC4132R , 2SC4133 .

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