All Transistors Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
2SC4442
  2SC4442
  2SC4442
 
2SC4442
  2SC4442
  2SC4442
 
2SC4442
  2SC4442
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
2SC4442 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SC4442 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC4442

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 45

Maximum collector-base voltage |Ucb|, V: 500

Maximum collector-emitter voltage |Uce|, V: 400

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 4

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 60

Noise Figure, dB: -

Package of 2SC4442 transistor: TO220

2SC4442 Equivalent Transistors - Cross-Reference Search

2SC4442 PDF doc:

1.1. 2sc4442.pdf Size:262K _inchange_semiconductor

2SC4442
2SC4442
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4442 DESCRIPTION · ·Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) ·Wide Area of Safe Operation ·High Speed Switching APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCES Collector-Emitter Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A IBB Base Current-Continuous 1.6 A Collector Power Dissipation 2 @Ta=25? PC W Collector Power Dissipation 45 @TC=25? Tj Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4442 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL

4.1. 2sc4448.pdf Size:211K _toshiba

2SC4442
2SC4442

4.2. 2sc4443.pdf Size:152K _sanyo

2SC4442
2SC4442
Ordering number:EN3200 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1685/2SC4443 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit:mm High gain-bandwidth product. 2059 Low saturation voltage. [2SA1685/2SC4443] B : Base C : Collector E : Emitter ( ) : 2SA1685 SANYO : MCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()40 V Collector-to-Emitter Voltage VCEO ()20 V Emitter-to-Base Voltage VEBO ()5 V Collector Current IC ()150 mA Collector Current (Pulse) ICP ()300 mA Base Current IB ()30 mA Collector Dissipation PC 150 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=()30V, IE=0 ()0.1 A Emitter Cutoff Current IEBO VEB=()4V, IC=0 ()0.1 A DC Current Gain hFE VCE=()1V,

4.3. 2sc4449.pdf Size:77K _sanyo

2SC4442
2SC4442
Ordering number:EN3241 NPN Triple Diffused Planar Silicon Transistor 2SC4449 TV Camera Deflection, High-Voltage Driver Applications Features Package Dimensions High breakdown voltage. unit:mm Small reverse transfer capacitance and excellent high 2003B frequency characteristic. [2SC4449] Excellent DC current gain. 5.0 4.0 4.0 Adoption of FBET process. 0.45 0.5 0.44 0.45 1 : Emitter 2 : Collector 3 : Base 1 2 3 SANYO : NP JEDEC : TO-92 1.3 1.3 EIAJ : SC-43 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 300 V Collector-to-Emitter Voltage VCEO 300 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 50 mA Collector Current (Pulse) ICP 100 mA Collector Dissipation PC 600 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Curr

4.4. 2sc4440.pdf Size:97K _sanyo

2SC4442
2SC4442
Ordering number:EN3793 NPN Triple Diffused Planar Silicon Transistor 2SC4440 Ultrahigh-Definition Monochrome Display Horizontal Deflection Output Applications Features Package Dimensions High reliability (Adoption of HVP process). unit:mm Fast switching speed. 2041A High brocking voltage. [2SC4440] Wide ASO. 4.5 10.0 2.8 Adoption of MBIT process. 3.2 Micaless package facilitating easy mounting. 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Base 2.55 2.55 2 : Collector 3 : Emitter 2.55 2.55 SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 600 V Collector-to-Emitter Voltage VCEO 400 V Emitter-to-Base Voltage VEBO 7 V Collector Current IC 7 A Collector Current (Pulse) ICP PW? 300 s, duty cycle? 10% 14 A Collector Dissipation PC 2.0 W Tc=25?C 30 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 2

4.5. 2sc4446.pdf Size:143K _sanyo

2SC4442
2SC4442
Ordering number:EN3013 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1687/2SC4446 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Very small-sized package permitting the 2SA1687/ unit:mm 2SC4446-applied sets to be made small and slim. 2059 High VEBO. [2SA1687/2SC4446] B : Base C : Collector E : Emitter ( ) : 2SA1687 SANYO : MCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()60 V Collector-to-Emitter Voltage VCEO ()50 V Emitter-to-Base Voltage VEBO ()15 V Collector Current IC ()150 mA Collector Current (Pulse) ICP ()300 mA Base Current IB ()30 mA Collector Dissipation PC 150 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=()40V, IE=0 ()0.1 A Emitter Cutoff Current IEBO VEB=(

4.6. 2sc4441.pdf Size:101K _sanyo

2SC4442
2SC4442
Ordering number:EN3794 NPN Triple Diffused Planar Silicon Transistor 2SC4441 Ultrahigh-Definition Monocuro Display Horizontal Deflection Output Applications Features Package Dimensions High reliability (Adoption of HVP process). unit:mm Fast switching speed. 2041A High breakdown voltage. [2SC4441] Wide ASO. 4.5 10.0 2.8 Adoption of MBIT process. 3.2 Micaless package facilitating mounting. 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Base 2.55 2.55 2 : Collector 3 : Emitter 2.55 2.55 SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 600 V Collector-to-Emitter Voltage VCEO 400 V Emitter-to-Base Voltage VEBO 7 V Collector Current IC 10 A Collector Current (Pulse) ICP PW? 300 s, Duty Cycle? 10% 20 A Collector Dissipation PC 2.0 W Tc=25?C 35 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C

4.7. 2sc4445.pdf Size:241K _jmnic

2SC4442
2SC4442
JMnic Product Specification Silicon NPN Power Transistors 2SC4445 DESCRIPTION ·With TO-3PML package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Aabsolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A ICM Collector current-peak 6 A IB Base current 1.5 A PC Collector power dissipation TC=25? 60 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon NPN Power Transistors 2SC4445 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 800 V VCEsat

4.8. 2sc4448.pdf Size:107K _jmnic

2SC4442
2SC4442
Product Specification www.jmnic.com Silicon Power Transistors 2SC4448 DESCRIPTION ·With TO-220F package ·High voltage ,high frequency APPLICATIONS ·Chroma output applications for HDTV ·Video output applications for high resolution display PINNING PIN DESCRIPTION 1 Base 2 Collector 3 emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 250 V VCEO Collector-emitter voltage Open base 250 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 150 mA ICM Collector current-peak 300 mA IB Base current 50 mA PC Collector dissipation Ta=25? 2 W PC Collector dissipation TC=25? 10 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification www.jmnic.com Silicon Power Transistors 2SC4448 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX

4.9. 2sc4445.pdf Size:25K _sanken-ele

2SC4442
2SC4442
2SC4445 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose (Ta=25C) External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics Symbol Symbol 2SC4445 Unit Conditions 2SC4445 Unit 0.2 0.2 5.5 15.6 0.2 3.45 ICBO VCBO 900 V VCB=800V 100max A IEBO VEB=7V 100max VCEO 800 V A V(BR)CEO IC=10mA 800min VEBO 7 V V 0.2 o3.3 hFE VCE=4V, IC=0.7A 10to30 IC 3(Pulse6) A a b VCE(sat) IC=0.7A, IB=0.14A 0.5max V IB 1.5 A PC VBE(sat) IC=0.7A, IB=0.14A 1.2max V 60(Tc=25C) W 1.75 fT 0.8 Tj VCE=12V, IE=0.3A 15typ MHz 150 C 2.15 COB VCB=10V, f=1MHz 50typ pF Tstg 55 to +150 C 1.05+0.2 -0.1 0.1 0.1 0.65+0.2 3.35 5.45 5.45 -0.1 Typical Switching Characteristics (Common Emitter) 1.5 4.4 1.5 VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g (V) (?) (A) (V) (V) (A) (A) ( s) ( s) ( s) a. Type No. B C E 250 35

4.10. 2sc4445.pdf Size:148K _inchange_semiconductor

2SC4442
2SC4442
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4445 DESCRIPTION Ў¤ With TO-3PML package Ў¤ High voltage. Ў¤ High speed switching APPLICATIONS Ў¤ For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Aabsolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER CHA IN Collector current Base current Collector-base voltage Collector-emitter voltage E SEM NG Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE 900 800 7 3 6 1.5 UNIT V V V A A A W Ўж Ўж Emitter-base voltage Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25Ўж 60 150 -55~150

4.11. 2sc4448.pdf Size:159K _inchange_semiconductor

2SC4442
2SC4442
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4448 DESCRIPTION Ў¤ With TO-220F package Ў¤ High voltage ,high frequency APPLICATIONS Ў¤ Chroma output applications for HDTV Ў¤ Video output applications for highresolution display PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220F) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB Collector-base voltage PARAMETER INC Collector-emitter voltage Emitter-base voltage ANG H E SEM Open base Open emitter OND IC CONDITIONS TOR UC VALUE 250 250 5 150 300 50 UNIT V V V mA mA mA Open collector Collector current Collector current-peak Base current Ta=25Ўж 2 W 10 150 -55~150 Ўж Ўж PC Collector dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature

See also transistors datasheet: 2SC4435 , 2SC4436 , 2SC4437 , 2SC4438 , 2SC4439 , 2SC444 , 2SC4440 , 2SC4441 , 2N3904 , 2SC4443 , 2SC4444 , 2SC4446 , 2SC4448 , 2SC4449 , 2SC445 , 2SC4450 , 2SC4451 .

Keywords

 2SC4442 Datasheet  2SC4442 Datenblatt  2SC4442 RoHS  2SC4442 Distributor
 2SC4442 Application Notes  2SC4442 Component  2SC4442 Circuit  2SC4442 Schematic
 2SC4442 Equivalent  2SC4442 Cross Reference  2SC4442 Data Sheet  2SC4442 Fiche Technique

(C) 2005 All Right reserved Bipolar | | MOSFET | | IGBT | | Manufacturer Sites | | SMD Code | | Packages | | Contact alltransistors[@]gmail.com