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2SC4589
  2SC4589
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  2SC4589
 
2SC4589
  2SC4589
  2SC4589
  2SC4589
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586G
2SA1586O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229O .. 2SC2434
2SC2435 .. 2SC2668Y
2SC2669 .. 2SC2859O
2SC2859Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC400M
2SC400O .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC507R
2SC507Y .. 2SC536SP
2SC537 .. 2SC5813
2SC5819 .. 2SC690
2SC690M .. 2SC89H
2SC90 .. 2SD1063S
2SD1064 .. 2SD1252
2SD1252A .. 2SD1442
2SD1442A .. 2SD1662
2SD1663 .. 2SD1848
2SD1849 .. 2SD2095
2SD2096 .. 2SD2439O
2SD2439P .. 2SD362R
2SD363 .. 2SD588A
2SD589 .. 2SD786
2SD787 .. 2STA2510
2STC2510 .. 40221
40222 .. 40630
40631 .. A177
A178 .. AC556K
AC558 .. AF129
AF130 .. ASY70
ASY70IV .. BC149B
BC149C .. BC237B-92
BC237BP .. BC337-25
BC337-40 .. BC477QF
BC477VI .. BC807-25
BC807-25L .. BC858CLT1
BC858CR .. BCV63
BCV63B .. BCW94K
BCW94KA .. BCY65EPA
BCY65EPB .. BD226-16
BD226-6 .. BD370B-16
BD370B-25 .. BD590
BD591 .. BD940F
BD941 .. BDV93
BDV94 .. BDX85A
BDX85B .. BF225JF
BF226 .. BF422
BF422A .. BF847
BF848 .. BFQ268
BFQ27 .. BFS33P
BFS34 .. BFV88
BFV88A .. BFY69V
BFY69W .. BLX88
BLX89 .. BSS72
BSS72S .. BSX46-6
BSX47 .. BTB1580L3
BTB1580M3 .. BU1508AX
BU1508DX .. BUD48A
BUD48AI .. BUS12B
BUS13 .. BUW46
BUW48 .. BUY64
BUY65 .. CD5918
CD5919 .. CI3397
CI3402 .. CL066P
CL100 .. CPH5517
CPH5518 .. CSA733
CSA733K .. CSC2274D
CSC2274E .. CT764
CT765 .. D29A4
D29A5 .. D41E2
D41E3 .. D62T6560
D62T7030 .. DT1311
DT1312 .. DTB143EC
DTB143EK .. DTL1654
DTL1655 .. ECG228A
ECG229 .. ED1401C
ED1401D .. ESM738T
ESM749 .. FE1718D
FE1718E .. FMA7A
FMA8A .. FN1F4N
FN1F4Z .. FXT3906SM
FXT449 .. GD362
GD363 .. GES929
GES93 .. GS9018
GS9018D .. GT402B
GT402D .. HEPS0015
HEPS0016 .. HSB649A
HSB649T .. IMBT3904
IMBT3905 .. JE9143A
JE9143B .. KRA111M
KRA111S .. KRC104
KRC104M .. KRC853F
KRC853U .. KSB1366
KSB1366G .. KSC3125
KSC3158 .. KSD569O
KSD569R .. KT203A
KT203AM .. KT336G
KT336V .. KT630G
KT630V .. KT815B9
KT815G .. KT9115A
KT9116A .. KTB989
KTC1001 .. KTN2222AE
KTN2222AS .. MCH4009
MCH4013 .. MJ11012
MJ11013 .. MJD47T4
MJD47TF .. MJE6044
MJE6045 .. MMBC1321Q4
MMBC1321Q5 .. MMBT6520L
MMBT6521L .. MP14B
MP14I .. MP5137
MP5138 .. MPS3397
MPS3398 .. MPSH54
MPSH55 .. MRF9511LT1
MRF957T1 .. NA12HG
NA12HH .. NB014EK
NB014EL .. NB212YH
NB212YI .. NKT13429
NKT135 .. NPS5449
NPS5550 .. NTE22
NTE226 .. OC822
OC823 .. PBSS5320T
PBSS5320X .. PMBT2369
PMBT2907 .. PRF949
PRF957 .. RCA1A16
RCA1A17 .. RN16J1
RN1701 .. RN2901AFS
RN2901FE .. S1770
S1784 .. SDT9303
SDT9304 .. SJ5436
SJ5437 .. SRA2219EF
SRA2219M .. STC5554
STC5555 .. SZD31CNPN
SZD31CPNP .. TA2511
TA2512 .. TIP145
TIP145F .. TIS45
TIS47 .. TN4122
TN4123 .. TP930A
TP930R .. UN1110S
UN1111 .. UN921BJ
UN921CJ .. ZT404P
ZT41 .. ZTX4403K
ZTX4403L .. ZXTP558L
ZXTP717MA .. ZXTPS720MC
 
2SC4589 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SC4589 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC4589

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 50

Maximum collector-base voltage |Ucb|, V: 1500

Maximum collector-emitter voltage |Uce|, V: 900

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 10

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 8

Noise Figure, dB: -

Package of 2SC4589 transistor: TO3PFM

2SC4589 Equivalent Transistors - Cross-Reference Search

2SC4589 PDF doc:

1.1. 2sc4589.pdf Size:376K _hitachi

2SC4589
2SC4589

1.2. 2sc4589.pdf Size:91K _inchange_semiconductor

2SC4589
2SC4589
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4589 DESCRIPTION · ·With TO-3PML package ·High breakdown voltage ·High speed switching APPLICATIONS ·For color TV display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 10 A Collector surge current 20 A IC(surge) IB Base current 0.6 A PC Collector power dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4589 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR )CEO

4.1. 2sc2310_2sc458.pdf Size:41K _hitachi

2SC4589
2SC4589
2SC458 (LG), 2SC2310 Silicon NPN Epitaxial Application Low frequency low noise amplifier Complementary pair with 2SA1031 and 2SA1032 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458 (LG), 2SC2310 Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SC458 (LG) 2SC2310 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V Emitter to base voltage VEBO 55V Collector current IC 100 100 mA Emitter current IE 100 100 mA Collector power dissipation PC 200 200 mW Junction temperature Tj 150 150 C Storage temperature Tstg 55 to +150 55 to +150 C 2 2SC458 (LG), 2SC2310 Electrical Characteristics (Ta = 25C) 2SC458 (LG) 2SC2310 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO 30 55 V IC = 10 A, IE = 0 breakdown voltage Collector to emitter V(BR)CEO 30 50 V IC = 1 mA, RBE = ? breakdown voltage Emitter to base V(BR)EBO 5 5 V IE = 10 A, IC = 0 break

4.2. 2sc458_2sc2308.pdf Size:27K _hitachi

2SC4589
2SC4589
2SC458, 2SC2308 Silicon NPN Epitaxial Application Low frequency amplifier Complementary pair with 2SA1029 and 2SA1030 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458, 2SC2308 Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SC458 2SC2308 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V Emitter to base voltage VEBO 55V Collector current IC 100 100 mA Emitter current IE 100 100 mA Collector power dissipation PC 200 200 mW Junction temperature Tj 150 150 C Storage temperature Tstg 55 to +150 55 to +150 C 2 2SC458, 2SC2308 Electrical Characteristics (Ta = 25C) 2SC458 2SC2308 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO 30 55 V IC = 10 A, IE = 0 breakdown voltage Collector to emitter V(BR)CEO 30 50 V IC = 1 mA, RBE = ? breakdown voltage Emitter to base V(BR)EBO 5 5 V IE = 10 A, IC = 0 breakdown voltage Collector cutoff curr

4.3. 2sc4580.pdf Size:432K _shindengen

2SC4589
2SC4589
SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4580 Case : ITO-3P Unit : mm (TP8W45FX) 8A NPN RATINGS ?Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55~150 ? Junction Temperature Tj 150 ? Collector to Base Voltage VCBO 600 V Collector to Emitter Voltage VCEO 450 V VCEX VEB = 5V 600 Emitter to Base Voltage VEBO 7V Collector Current DC IC 8A Collector Current Peak ICP 16 Base Current DC IB 4 A Base Current Peak IBP 8 Total Transistor Dissipation PT Tc = 25? 50 W Dielectric Strength Vdis Terminals to case, AC 1 minute 2 kV Mounting Torque TOR 0.8 N?m ?Electrical Characteristics (Tc=25?) Item Symbol Conditions Ratings Unit Collector to Emitter Sustaining Voltage VCEO(sus) IC = 0.2A Min 450 V Collector Cutoff Current ICBO At rated Voltage Max 0.1 mA ICEO Max 0.1 Emitter Cutoff Current IEBO At rated Voltage Max 0.1 mA DC Current Gain hFE VCE = 5V, IC = 4A Min 10 hFEL VCE = 5V, IC = 1mA Min 5 Co

4.4. 2sc4582.pdf Size:446K _shindengen

2SC4589
2SC4589
SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4582 Case : ITO-3P Unit : mm (TP15W45FX) 15A NPN RATINGS ?Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55~150 ? Junction Temperature Tj 150 ? Collector to Base Voltage VCBO 600 V Collector to Emitter Voltage VCEO 450 V VCEX VEB = 5V 600 Emitter to Base Voltage VEBO 7V Collector Current DC IC 15A Collector Current Peak ICP 30 Base Current DC IB 6 A Base Current Peak IBP 12 Total Transistor Dissipation PT Tc = 25? 75 W Dielectric Strength Vdis Terminals to case, AC 1 minute 2 kV Mounting Torque TOR 0.8 N?m ?Electrical Characteristics (Tc=25?) Item Symbol Conditions Ratings Unit Collector to Emitter Sustaining Voltage VCEO(sus) IC = 0.2A Min 450 V Collector Cutoff Current ICBO At rated Voltage Max 0.1 mA ICEO Max 0.1 Emitter Cutoff Current IEBO At rated Voltage Max 0.1 mA DC Current Gain hFE VCE = 5V, IC = 7.5A Min 10 hFEL VCE = 5V, IC = 1mA Min

4.5. 2sc4581.pdf Size:443K _shindengen

2SC4589
2SC4589
SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4581 Case : ITO-3P Unit : mm (TP10W45FX) 10A NPN RATINGS ?Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55~150 ? Junction Temperature Tj 150 ? Collector to Base Voltage VCBO 600 V Collector to Emitter Voltage VCEO 450 V VCEX VEB = 5V 600 Emitter to Base Voltage VEBO 7V Collector Current DC IC 10A Collector Current Peak ICP 20 Base Current DC IB 4 A Base Current Peak IBP 8 Total Transistor Dissipation PT Tc = 25? 65 W Dielectric Strength Vdis Terminals to case, AC 1 minute 2 kV Mounting Torque TOR 0.8 N?m ?Electrical Characteristics (Tc=25?) Item Symbol Conditions Ratings Unit Collector to Emitter Sustaining Voltage VCEO(sus) IC = 0.2A Min 450 V Collector Cutoff Current ICBO At rated Voltage Max 0.1 mA ICEO Max 0.1 Emitter Cutoff Current IEBO At rated Voltage Max 0.1 mA DC Current Gain hFE VCE = 5V, IC = 5A Min 10 hFEL VCE = 5V, IC = 1mA Min 5

4.6. 2sc4585.pdf Size:437K _shindengen

2SC4589
2SC4589
SHINDENGEN Switching Power Transistor HFX Series OUTLINE DIMENSIONS 2SC4585 Case : ITO-3P Unit : mm (TP10W80HFX) 10A NPN RATINGS ?Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55~150 ? Junction Temperature Tj 150 ? Collector to Base Voltage VCBO 1200 V Collector to Emitter Voltage VCEO 800 V Emitter to Base Voltage VEBO 7V Collector Current DC IC 10A Collector Current Peak ICP 20 Base Current DC IB 4 A Base Current Peak IBP 8 Total Transistor Dissipation PT Tc = 25? 85 W Dielectric Strength Vdis Terminals to case, AC 1 minute 2 kV Mounting Torque TOR (Recommended torque : 0.5N?m) 0.8 N?m ?Electrical Characteristics (Tc=25?) Item Symbol Conditions Ratings Unit Collector to Emitter Sustaining Voltage VCEO(sus) IC = 0.2A Min 800 V Collector Cutoff Current ICBO At rated Voltage Max 0.1 mA ICEO Max 0.1 Emitter Cutoff Current IEBO At rated Voltage Max 0.1 mA DC Current Gain hFE VCE = 5V, IC = 5A Min 8 hFEL VCE = 5V, IC

4.7. 2sc4584.pdf Size:441K _shindengen

2SC4589
2SC4589
SHINDENGEN Switching Power Transistor HFX Series OUTLINE DIMENSIONS 2SC4584 Case : ITO-3P Unit : mm (TP6W80HFX) 6A NPN RATINGS ?Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55~150 ? Junction Temperature Tj 150 ? Collector to Base Voltage VCBO 1200 V Collector to Emitter Voltage VCEO 800 V Emitter to Base Voltage VEBO 7V Collector Current DC IC 6A Collector Current Peak ICP 12 Base Current DC IB 3 A Base Current Peak IBP 6 Total Transistor Dissipation PT Tc = 25? 65 W Dielectric Strength Vdis Terminals to case, AC 1 minute 2 kV Mounting Torque TOR (Recommended torque : 0.5N?m) 0.8 N?m ?Electrical Characteristics (Tc=25?) Item Symbol Conditions Ratings Unit Collector to Emitter Sustaining Voltage VCEO(sus) IC = 0.2A Min 800 V Collector Cutoff Current ICBO At rated Voltage Max 0.1 mA ICEO Max 0.1 Emitter Cutoff Current IEBO At rated Voltage Max 0.1 mA DC Current Gain hFE VCE = 5V, IC = 3A Min 8 hFEL VCE = 5V, IC =

4.8. 2sc4583.pdf Size:438K _shindengen

2SC4589
2SC4589
SHINDENGEN Switching Power Transistor HFX Series OUTLINE DIMENSIONS 2SC4583 Case : ITO-3P Unit : mm (TP3W80HFX) 3A NPN RATINGS ?Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55~150 ? Junction Temperature Tj 150 ? Collector to Base Voltage VCBO 1200 V Collector to Emitter Voltage VCEO 800 V Emitter to Base Voltage VEBO 7V Collector Current DC IC 3A Collector Current Peak ICP 6 Base Current DC IB 1 A Base Current Peak IBP 2 Total Transistor Dissipation PT Tc = 25? 50 W Dielectric Strength Vdis Terminals to cased, AC 1 minute 2 kV Mounting Torque TOR (Recommended torque : 0.5N?m) 0.8 N?m ?Electrical Characteristics (Tc=25?) Item Symbol Conditions Ratings Unit Collector to Emitter Sustaining Voltage VCEO(sus) IC = 0.1A Min 800 V Collector Cutoff Current ICBO At rated Voltage Max 0.1 mA ICEO Max 0.1 Emitter Cutoff Current IEBO At rated Voltage Max 0.1 mA DC Current Gain hFE VCE = 5V, IC = 1.5A Min 8 hFEL VCE = 5V, IC

4.9. 2sc4580.pdf Size:236K _inchange_semiconductor

2SC4589
2SC4589
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4580 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) ·Fast Switching speed APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 450 V VCEX Collector-Emitter Voltage VEB= 5V 600 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IBB Base Current-Continuous 4 A IBM Base Current-Peak 8 A Total Power Dissipation PT @ TC=25? 50 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 2.5 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4580 ELECTRICAL CHARACT

4.10. 2sc4582.pdf Size:91K _inchange_semiconductor

2SC4589
2SC4589
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4582 DESCRIPTION ·With TO-3PML package ·High voltage,high speed ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 15 A ICM Collector current-peak 30 A IB Base current 6 A IBM Base current-peak 12 A PC Collector power dissipation TC=25? 75 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 1.67 ?/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4582 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PA

4.11. 2sc4581.pdf Size:91K _inchange_semiconductor

2SC4589
2SC4589
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4581 DESCRIPTION ·With TO-3PML package ·High voltage,high speed ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A ICM Collector current-peak 20 A IB Base current 4 A IBM Base current-peak 8 A PC Collector power dissipation TC=25? 65 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 1.92 ?/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4581 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER

4.12. 2sc4584.pdf Size:91K _inchange_semiconductor

2SC4589
2SC4589
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4584 DESCRIPTION ·With TO-3PML package ·High voltage,high speed ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1200 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 6 A ICM Collector current-peak 12 A IB Base current 3 A IBM Base current-peak 6 A PC Collector power dissipation TC=25? 65 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 1.92 ?/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4584 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PAR

4.13. 2sc4583.pdf Size:270K _inchange_semiconductor

2SC4589
2SC4589
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4583 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·Fast Switching speed APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 6 A IBB Base Current-Continuous 1 A IBM Base Current-Peak 2 A Total Power Dissipation PT @ TC=25? 50 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 2.5 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4583 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified

See also transistors datasheet: 2SC4579 , 2SC458 , 2SC4580 , 2SC4581 , 2SC4582 , 2SC4583 , 2SC4584 , 2SC4585 , 9014 , 2SC458K , 2SC458L , 2SC458LG , 2SC459 , 2SC4596 , 2SC4597 , 2SC4598 , 2SC4599 .

Keywords

 2SC4589 Datasheet  2SC4589 Datenblatt  2SC4589 RoHS  2SC4589 Distributor
 2SC4589 Application Notes  2SC4589 Component  2SC4589 Circuit  2SC4589 Schematic
 2SC4589 Equivalent  2SC4589 Cross Reference  2SC4589 Data Sheet  2SC4589 Fiche Technique

 

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