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2SC4589
  2SC4589
  2SC4589
 
2SC4589
  2SC4589
  2SC4589
 
2SC4589
  2SC4589
 
 
List
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
2SC4589 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SC4589 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC4589

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 50

Maximum collector-base voltage |Ucb|, V: 1500

Maximum collector-emitter voltage |Uce|, V: 900

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 10

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 8

Noise Figure, dB: -

Package of 2SC4589 transistor: TO3PFM

2SC4589 Equivalent Transistors - Cross-Reference Search

2SC4589 PDF doc:

1.1. 2sc4589.pdf Size:376K _hitachi

2SC4589
2SC4589

1.2. 2sc4589.pdf Size:91K _inchange_semiconductor

2SC4589
2SC4589
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4589 DESCRIPTION · ·With TO-3PML package ·High breakdown voltage ·High speed switching APPLICATIONS ·For color TV display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 10 A Collector surge current 20 A IC(surge) IB Base current 0.6 A PC Collector power dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4589 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR )CEO

4.1. 2sc458_2sc2308.pdf Size:27K _hitachi

2SC4589
2SC4589
2SC458, 2SC2308 Silicon NPN Epitaxial Application Low frequency amplifier Complementary pair with 2SA1029 and 2SA1030 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458, 2SC2308 Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SC458 2SC2308 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V Emitter to base voltage VEBO 55V Collector current IC 100 100 mA Emitter current IE 100 100 mA Collector power dissipation PC 200 200 mW Junction temperature Tj 150 150 C Storage temperature Tstg 55 to +150 55 to +150 C 2 2SC458, 2SC2308 Electrical Characteristics (Ta = 25C) 2SC458 2SC2308 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO 30 55 V IC = 10 A, IE = 0 breakdown voltage Collector to emitter V(BR)CEO 30 50 V IC = 1 mA, RBE = ? breakdown voltage Emitter to base V(BR)EBO 5 5 V IE = 10 A, IC = 0 breakdown voltage Collector cutoff curr

4.2. 2sc2310_2sc458.pdf Size:41K _hitachi

2SC4589
2SC4589
2SC458 (LG), 2SC2310 Silicon NPN Epitaxial Application Low frequency low noise amplifier Complementary pair with 2SA1031 and 2SA1032 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458 (LG), 2SC2310 Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SC458 (LG) 2SC2310 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V Emitter to base voltage VEBO 55V Collector current IC 100 100 mA Emitter current IE 100 100 mA Collector power dissipation PC 200 200 mW Junction temperature Tj 150 150 C Storage temperature Tstg 55 to +150 55 to +150 C 2 2SC458 (LG), 2SC2310 Electrical Characteristics (Ta = 25C) 2SC458 (LG) 2SC2310 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO 30 55 V IC = 10 A, IE = 0 breakdown voltage Collector to emitter V(BR)CEO 30 50 V IC = 1 mA, RBE = ? breakdown voltage Emitter to base V(BR)EBO 5 5 V IE = 10 A, IC = 0 break

4.3. 2sc4583.pdf Size:438K _shindengen

2SC4589
2SC4589
SHINDENGEN Switching Power Transistor HFX Series OUTLINE DIMENSIONS 2SC4583 Case : ITO-3P Unit : mm (TP3W80HFX) 3A NPN RATINGS ?Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55~150 ? Junction Temperature Tj 150 ? Collector to Base Voltage VCBO 1200 V Collector to Emitter Voltage VCEO 800 V Emitter to Base Voltage VEBO 7V Collector Current DC IC 3A Collector Current Peak ICP 6 Base Current DC IB 1 A Base Current Peak IBP 2 Total Transistor Dissipation PT Tc = 25? 50 W Dielectric Strength Vdis Terminals to cased, AC 1 minute 2 kV Mounting Torque TOR (Recommended torque : 0.5N?m) 0.8 N?m ?Electrical Characteristics (Tc=25?) Item Symbol Conditions Ratings Unit Collector to Emitter Sustaining Voltage VCEO(sus) IC = 0.1A Min 800 V Collector Cutoff Current ICBO At rated Voltage Max 0.1 mA ICEO Max 0.1 Emitter Cutoff Current IEBO At rated Voltage Max 0.1 mA DC Current Gain hFE VCE = 5V, IC = 1.5A Min 8 hFEL VCE = 5V, IC

4.4. 2sc4581.pdf Size:443K _shindengen

2SC4589
2SC4589
SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4581 Case : ITO-3P Unit : mm (TP10W45FX) 10A NPN RATINGS ?Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55~150 ? Junction Temperature Tj 150 ? Collector to Base Voltage VCBO 600 V Collector to Emitter Voltage VCEO 450 V VCEX VEB = 5V 600 Emitter to Base Voltage VEBO 7V Collector Current DC IC 10A Collector Current Peak ICP 20 Base Current DC IB 4 A Base Current Peak IBP 8 Total Transistor Dissipation PT Tc = 25? 65 W Dielectric Strength Vdis Terminals to case, AC 1 minute 2 kV Mounting Torque TOR 0.8 N?m ?Electrical Characteristics (Tc=25?) Item Symbol Conditions Ratings Unit Collector to Emitter Sustaining Voltage VCEO(sus) IC = 0.2A Min 450 V Collector Cutoff Current ICBO At rated Voltage Max 0.1 mA ICEO Max 0.1 Emitter Cutoff Current IEBO At rated Voltage Max 0.1 mA DC Current Gain hFE VCE = 5V, IC = 5A Min 10 hFEL VCE = 5V, IC = 1mA Min 5

4.5. 2sc4582.pdf Size:446K _shindengen

2SC4589
2SC4589
SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4582 Case : ITO-3P Unit : mm (TP15W45FX) 15A NPN RATINGS ?Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55~150 ? Junction Temperature Tj 150 ? Collector to Base Voltage VCBO 600 V Collector to Emitter Voltage VCEO 450 V VCEX VEB = 5V 600 Emitter to Base Voltage VEBO 7V Collector Current DC IC 15A Collector Current Peak ICP 30 Base Current DC IB 6 A Base Current Peak IBP 12 Total Transistor Dissipation PT Tc = 25? 75 W Dielectric Strength Vdis Terminals to case, AC 1 minute 2 kV Mounting Torque TOR 0.8 N?m ?Electrical Characteristics (Tc=25?) Item Symbol Conditions Ratings Unit Collector to Emitter Sustaining Voltage VCEO(sus) IC = 0.2A Min 450 V Collector Cutoff Current ICBO At rated Voltage Max 0.1 mA ICEO Max 0.1 Emitter Cutoff Current IEBO At rated Voltage Max 0.1 mA DC Current Gain hFE VCE = 5V, IC = 7.5A Min 10 hFEL VCE = 5V, IC = 1mA Min

4.6. 2sc4580.pdf Size:432K _shindengen

2SC4589
2SC4589
SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4580 Case : ITO-3P Unit : mm (TP8W45FX) 8A NPN RATINGS ?Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55~150 ? Junction Temperature Tj 150 ? Collector to Base Voltage VCBO 600 V Collector to Emitter Voltage VCEO 450 V VCEX VEB = 5V 600 Emitter to Base Voltage VEBO 7V Collector Current DC IC 8A Collector Current Peak ICP 16 Base Current DC IB 4 A Base Current Peak IBP 8 Total Transistor Dissipation PT Tc = 25? 50 W Dielectric Strength Vdis Terminals to case, AC 1 minute 2 kV Mounting Torque TOR 0.8 N?m ?Electrical Characteristics (Tc=25?) Item Symbol Conditions Ratings Unit Collector to Emitter Sustaining Voltage VCEO(sus) IC = 0.2A Min 450 V Collector Cutoff Current ICBO At rated Voltage Max 0.1 mA ICEO Max 0.1 Emitter Cutoff Current IEBO At rated Voltage Max 0.1 mA DC Current Gain hFE VCE = 5V, IC = 4A Min 10 hFEL VCE = 5V, IC = 1mA Min 5 Co

4.7. 2sc4584.pdf Size:441K _shindengen

2SC4589
2SC4589
SHINDENGEN Switching Power Transistor HFX Series OUTLINE DIMENSIONS 2SC4584 Case : ITO-3P Unit : mm (TP6W80HFX) 6A NPN RATINGS ?Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55~150 ? Junction Temperature Tj 150 ? Collector to Base Voltage VCBO 1200 V Collector to Emitter Voltage VCEO 800 V Emitter to Base Voltage VEBO 7V Collector Current DC IC 6A Collector Current Peak ICP 12 Base Current DC IB 3 A Base Current Peak IBP 6 Total Transistor Dissipation PT Tc = 25? 65 W Dielectric Strength Vdis Terminals to case, AC 1 minute 2 kV Mounting Torque TOR (Recommended torque : 0.5N?m) 0.8 N?m ?Electrical Characteristics (Tc=25?) Item Symbol Conditions Ratings Unit Collector to Emitter Sustaining Voltage VCEO(sus) IC = 0.2A Min 800 V Collector Cutoff Current ICBO At rated Voltage Max 0.1 mA ICEO Max 0.1 Emitter Cutoff Current IEBO At rated Voltage Max 0.1 mA DC Current Gain hFE VCE = 5V, IC = 3A Min 8 hFEL VCE = 5V, IC =

4.8. 2sc4585.pdf Size:437K _shindengen

2SC4589
2SC4589
SHINDENGEN Switching Power Transistor HFX Series OUTLINE DIMENSIONS 2SC4585 Case : ITO-3P Unit : mm (TP10W80HFX) 10A NPN RATINGS ?Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55~150 ? Junction Temperature Tj 150 ? Collector to Base Voltage VCBO 1200 V Collector to Emitter Voltage VCEO 800 V Emitter to Base Voltage VEBO 7V Collector Current DC IC 10A Collector Current Peak ICP 20 Base Current DC IB 4 A Base Current Peak IBP 8 Total Transistor Dissipation PT Tc = 25? 85 W Dielectric Strength Vdis Terminals to case, AC 1 minute 2 kV Mounting Torque TOR (Recommended torque : 0.5N?m) 0.8 N?m ?Electrical Characteristics (Tc=25?) Item Symbol Conditions Ratings Unit Collector to Emitter Sustaining Voltage VCEO(sus) IC = 0.2A Min 800 V Collector Cutoff Current ICBO At rated Voltage Max 0.1 mA ICEO Max 0.1 Emitter Cutoff Current IEBO At rated Voltage Max 0.1 mA DC Current Gain hFE VCE = 5V, IC = 5A Min 8 hFEL VCE = 5V, IC

4.9. 2sc4583.pdf Size:270K _inchange_semiconductor

2SC4589
2SC4589
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4583 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·Fast Switching speed APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 6 A IBB Base Current-Continuous 1 A IBM Base Current-Peak 2 A Total Power Dissipation PT @ TC=25? 50 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 2.5 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4583 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified

4.10. 2sc4581.pdf Size:91K _inchange_semiconductor

2SC4589
2SC4589
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4581 DESCRIPTION ·With TO-3PML package ·High voltage,high speed ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A ICM Collector current-peak 20 A IB Base current 4 A IBM Base current-peak 8 A PC Collector power dissipation TC=25? 65 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 1.92 ?/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4581 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER

4.11. 2sc4582.pdf Size:91K _inchange_semiconductor

2SC4589
2SC4589
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4582 DESCRIPTION ·With TO-3PML package ·High voltage,high speed ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 15 A ICM Collector current-peak 30 A IB Base current 6 A IBM Base current-peak 12 A PC Collector power dissipation TC=25? 75 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 1.67 ?/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4582 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PA

4.12. 2sc4580.pdf Size:236K _inchange_semiconductor

2SC4589
2SC4589
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4580 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) ·Fast Switching speed APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 450 V VCEX Collector-Emitter Voltage VEB= 5V 600 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IBB Base Current-Continuous 4 A IBM Base Current-Peak 8 A Total Power Dissipation PT @ TC=25? 50 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 2.5 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4580 ELECTRICAL CHARACT

4.13. 2sc4584.pdf Size:91K _inchange_semiconductor

2SC4589
2SC4589
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4584 DESCRIPTION ·With TO-3PML package ·High voltage,high speed ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1200 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 6 A ICM Collector current-peak 12 A IB Base current 3 A IBM Base current-peak 6 A PC Collector power dissipation TC=25? 65 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 1.92 ?/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4584 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PAR

See also transistors datasheet: 2SC4579 , 2SC458 , 2SC4580 , 2SC4581 , 2SC4582 , 2SC4583 , 2SC4584 , 2SC4585 , 9014 , 2SC458K , 2SC458L , 2SC458LG , 2SC459 , 2SC4596 , 2SC4597 , 2SC4598 , 2SC4599 .

Keywords

 2SC4589 Datasheet  2SC4589 Datenblatt  2SC4589 RoHS  2SC4589 Distributor
 2SC4589 Application Notes  2SC4589 Component  2SC4589 Circuit  2SC4589 Schematic
 2SC4589 Equivalent  2SC4589 Cross Reference  2SC4589 Data Sheet  2SC4589 Fiche Technique

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