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2SC4589
  2SC4589
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2SC4589
  2SC4589
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2SC4589
  2SC4589
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU214
BU215 .. BUF410AI
BUF410FI .. BUS22BF
BUS22C .. BUW81A
BUW84 .. BUY83
BUY84 .. CD9013J
CD9014 .. CIL157
CIL157A .. CL166A
CL166B .. CPS2540B
CPS2545B .. CSA968
CSA968A .. CSC2688BPL
CSC2688G .. CTP1108
CTP1109 .. D29J6
D29J7 .. D42CU5
D42CU6 .. D64VP4
D64VP5 .. DT400-300
DT400-400 .. DTC015EM
DTC015EUB .. DTL3501
DTL3502 .. ECG2332
ECG2334 .. ED1602C
ED1602D .. ET206
ET359 .. FE4021
FE4022 .. FMG12
FMG13 .. FPC644
FPC828 .. FXT555SM
FXT557 .. GE55821
GE56551 .. GET3
GET3013 .. GSDS50018
GSDS50020 .. GT43
GT44 .. HEPS3035
HEPS3047 .. HSE131
HSE133 .. IMX2
IMX3 .. K2107
K2107A .. KRA161F
KRA163F .. KRC117
KRC117M .. KRC868E
KRC868U .. KSB772-R
KSB772-Y .. KSC5020-R
KSC5020-Y .. KSE13004
KSE13005 .. KT210B
KT210V .. KT347B
KT347V .. KT644G
KT644V .. KT817G9
KT817V .. KT916B
KT918A .. KTC3103A1
KTC3103B1 .. KTX311T
KTX312T .. MD1131F
MD1132 .. MJ14002
MJ14003 .. MJE13003HT
MJE13003HV .. MJF18008
MJF2955 .. MMBT1015
MMBT123S .. MMBTA56L
MMBTA56LT1 .. MP1550A
MP1551 .. MP800
MP801 .. MPS3866
MPS3900 .. MPSW55
MPSW56 .. MT3002
MT3011 .. NA21ZX
NA21ZY .. NB021FZ
NB021H .. NB213YY
NB213Z .. NKT242L
NKT243 .. NR431DF
NR431DG .. NTE2542
NTE2543 .. P217A
P217B .. PDTA114YT
PDTA114YU .. PMD1702K
PMD1703K .. PTB20030
PTB20031 .. RCA8766D
RCA8766E .. RN1908FE
RN1908FS .. RN2962FE
RN2962FS .. S629T
S630T .. SE8520
SE8521 .. SM3174
SM3176 .. SRC1206UF
SRC1207 .. STD826
STD830CP40 .. T1344
T1346 .. TBF869
TBF870 .. TIP32F
TIP33 .. TIX620
TIX621 .. TN5143
TN5172 .. TR21
TR236 .. UN1224
UN1518 .. UPT211
UPT212 .. ZTX107CL
ZTX107CM .. ZTX549
ZTX550 .. ZXTPS720MC
 
2SC4589 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SC4589 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SC4589

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 50

Maximum collector-base voltage |Ucb|, V: 1500

Maximum collector-emitter voltage |Uce|, V: 900

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 10

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 8

Noise Figure, dB: -

Package of 2SC4589 transistor: TO3PFM

2SC4589 Equivalent Transistors - Cross-Reference Search

2SC4589 PDF doc:

1.1. 2sc4589.pdf Size:376K _hitachi

2SC4589
2SC4589

1.2. 2sc4589.pdf Size:91K _inchange_semiconductor

2SC4589
2SC4589
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4589 DESCRIPTION · ·With TO-3PML package ·High breakdown voltage ·High speed switching APPLICATIONS ·For color TV display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 10 A Collector surge current 20 A IC(surge) IB Base current 0.6 A PC Collector power dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4589 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR )CEO

4.1. 2sc2310_2sc458.pdf Size:41K _hitachi

2SC4589
2SC4589
2SC458 (LG), 2SC2310 Silicon NPN Epitaxial Application Low frequency low noise amplifier Complementary pair with 2SA1031 and 2SA1032 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458 (LG), 2SC2310 Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SC458 (LG) 2SC2310 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V Emitter to base voltage VEBO 55V Collector current IC 100 100 mA Emitter current IE 100 100 mA Collector power dissipation PC 200 200 mW Junction temperature Tj 150 150 C Storage temperature Tstg 55 to +150 55 to +150 C 2 2SC458 (LG), 2SC2310 Electrical Characteristics (Ta = 25C) 2SC458 (LG) 2SC2310 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO 30 55 V IC = 10 A, IE = 0 breakdown voltage Collector to emitter V(BR)CEO 30 50 V IC = 1 mA, RBE = ? breakdown voltage Emitter to base V(BR)EBO 5 5 V IE = 10 A, IC = 0 break

4.2. 2sc458_2sc2308.pdf Size:27K _hitachi

2SC4589
2SC4589
2SC458, 2SC2308 Silicon NPN Epitaxial Application Low frequency amplifier Complementary pair with 2SA1029 and 2SA1030 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458, 2SC2308 Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SC458 2SC2308 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V Emitter to base voltage VEBO 55V Collector current IC 100 100 mA Emitter current IE 100 100 mA Collector power dissipation PC 200 200 mW Junction temperature Tj 150 150 C Storage temperature Tstg 55 to +150 55 to +150 C 2 2SC458, 2SC2308 Electrical Characteristics (Ta = 25C) 2SC458 2SC2308 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO 30 55 V IC = 10 A, IE = 0 breakdown voltage Collector to emitter V(BR)CEO 30 50 V IC = 1 mA, RBE = ? breakdown voltage Emitter to base V(BR)EBO 5 5 V IE = 10 A, IC = 0 breakdown voltage Collector cutoff curr

4.3. 2sc4580.pdf Size:432K _shindengen

2SC4589
2SC4589
SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4580 Case : ITO-3P Unit : mm (TP8W45FX) 8A NPN RATINGS ?Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55~150 ? Junction Temperature Tj 150 ? Collector to Base Voltage VCBO 600 V Collector to Emitter Voltage VCEO 450 V VCEX VEB = 5V 600 Emitter to Base Voltage VEBO 7V Collector Current DC IC 8A Collector Current Peak ICP 16 Base Current DC IB 4 A Base Current Peak IBP 8 Total Transistor Dissipation PT Tc = 25? 50 W Dielectric Strength Vdis Terminals to case, AC 1 minute 2 kV Mounting Torque TOR 0.8 N?m ?Electrical Characteristics (Tc=25?) Item Symbol Conditions Ratings Unit Collector to Emitter Sustaining Voltage VCEO(sus) IC = 0.2A Min 450 V Collector Cutoff Current ICBO At rated Voltage Max 0.1 mA ICEO Max 0.1 Emitter Cutoff Current IEBO At rated Voltage Max 0.1 mA DC Current Gain hFE VCE = 5V, IC = 4A Min 10 hFEL VCE = 5V, IC = 1mA Min 5 Co

4.4. 2sc4582.pdf Size:446K _shindengen

2SC4589
2SC4589
SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4582 Case : ITO-3P Unit : mm (TP15W45FX) 15A NPN RATINGS ?Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55~150 ? Junction Temperature Tj 150 ? Collector to Base Voltage VCBO 600 V Collector to Emitter Voltage VCEO 450 V VCEX VEB = 5V 600 Emitter to Base Voltage VEBO 7V Collector Current DC IC 15A Collector Current Peak ICP 30 Base Current DC IB 6 A Base Current Peak IBP 12 Total Transistor Dissipation PT Tc = 25? 75 W Dielectric Strength Vdis Terminals to case, AC 1 minute 2 kV Mounting Torque TOR 0.8 N?m ?Electrical Characteristics (Tc=25?) Item Symbol Conditions Ratings Unit Collector to Emitter Sustaining Voltage VCEO(sus) IC = 0.2A Min 450 V Collector Cutoff Current ICBO At rated Voltage Max 0.1 mA ICEO Max 0.1 Emitter Cutoff Current IEBO At rated Voltage Max 0.1 mA DC Current Gain hFE VCE = 5V, IC = 7.5A Min 10 hFEL VCE = 5V, IC = 1mA Min

4.5. 2sc4581.pdf Size:443K _shindengen

2SC4589
2SC4589
SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4581 Case : ITO-3P Unit : mm (TP10W45FX) 10A NPN RATINGS ?Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55~150 ? Junction Temperature Tj 150 ? Collector to Base Voltage VCBO 600 V Collector to Emitter Voltage VCEO 450 V VCEX VEB = 5V 600 Emitter to Base Voltage VEBO 7V Collector Current DC IC 10A Collector Current Peak ICP 20 Base Current DC IB 4 A Base Current Peak IBP 8 Total Transistor Dissipation PT Tc = 25? 65 W Dielectric Strength Vdis Terminals to case, AC 1 minute 2 kV Mounting Torque TOR 0.8 N?m ?Electrical Characteristics (Tc=25?) Item Symbol Conditions Ratings Unit Collector to Emitter Sustaining Voltage VCEO(sus) IC = 0.2A Min 450 V Collector Cutoff Current ICBO At rated Voltage Max 0.1 mA ICEO Max 0.1 Emitter Cutoff Current IEBO At rated Voltage Max 0.1 mA DC Current Gain hFE VCE = 5V, IC = 5A Min 10 hFEL VCE = 5V, IC = 1mA Min 5

4.6. 2sc4585.pdf Size:437K _shindengen

2SC4589
2SC4589
SHINDENGEN Switching Power Transistor HFX Series OUTLINE DIMENSIONS 2SC4585 Case : ITO-3P Unit : mm (TP10W80HFX) 10A NPN RATINGS ?Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55~150 ? Junction Temperature Tj 150 ? Collector to Base Voltage VCBO 1200 V Collector to Emitter Voltage VCEO 800 V Emitter to Base Voltage VEBO 7V Collector Current DC IC 10A Collector Current Peak ICP 20 Base Current DC IB 4 A Base Current Peak IBP 8 Total Transistor Dissipation PT Tc = 25? 85 W Dielectric Strength Vdis Terminals to case, AC 1 minute 2 kV Mounting Torque TOR (Recommended torque : 0.5N?m) 0.8 N?m ?Electrical Characteristics (Tc=25?) Item Symbol Conditions Ratings Unit Collector to Emitter Sustaining Voltage VCEO(sus) IC = 0.2A Min 800 V Collector Cutoff Current ICBO At rated Voltage Max 0.1 mA ICEO Max 0.1 Emitter Cutoff Current IEBO At rated Voltage Max 0.1 mA DC Current Gain hFE VCE = 5V, IC = 5A Min 8 hFEL VCE = 5V, IC

4.7. 2sc4584.pdf Size:441K _shindengen

2SC4589
2SC4589
SHINDENGEN Switching Power Transistor HFX Series OUTLINE DIMENSIONS 2SC4584 Case : ITO-3P Unit : mm (TP6W80HFX) 6A NPN RATINGS ?Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55~150 ? Junction Temperature Tj 150 ? Collector to Base Voltage VCBO 1200 V Collector to Emitter Voltage VCEO 800 V Emitter to Base Voltage VEBO 7V Collector Current DC IC 6A Collector Current Peak ICP 12 Base Current DC IB 3 A Base Current Peak IBP 6 Total Transistor Dissipation PT Tc = 25? 65 W Dielectric Strength Vdis Terminals to case, AC 1 minute 2 kV Mounting Torque TOR (Recommended torque : 0.5N?m) 0.8 N?m ?Electrical Characteristics (Tc=25?) Item Symbol Conditions Ratings Unit Collector to Emitter Sustaining Voltage VCEO(sus) IC = 0.2A Min 800 V Collector Cutoff Current ICBO At rated Voltage Max 0.1 mA ICEO Max 0.1 Emitter Cutoff Current IEBO At rated Voltage Max 0.1 mA DC Current Gain hFE VCE = 5V, IC = 3A Min 8 hFEL VCE = 5V, IC =

4.8. 2sc4583.pdf Size:438K _shindengen

2SC4589
2SC4589
SHINDENGEN Switching Power Transistor HFX Series OUTLINE DIMENSIONS 2SC4583 Case : ITO-3P Unit : mm (TP3W80HFX) 3A NPN RATINGS ?Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55~150 ? Junction Temperature Tj 150 ? Collector to Base Voltage VCBO 1200 V Collector to Emitter Voltage VCEO 800 V Emitter to Base Voltage VEBO 7V Collector Current DC IC 3A Collector Current Peak ICP 6 Base Current DC IB 1 A Base Current Peak IBP 2 Total Transistor Dissipation PT Tc = 25? 50 W Dielectric Strength Vdis Terminals to cased, AC 1 minute 2 kV Mounting Torque TOR (Recommended torque : 0.5N?m) 0.8 N?m ?Electrical Characteristics (Tc=25?) Item Symbol Conditions Ratings Unit Collector to Emitter Sustaining Voltage VCEO(sus) IC = 0.1A Min 800 V Collector Cutoff Current ICBO At rated Voltage Max 0.1 mA ICEO Max 0.1 Emitter Cutoff Current IEBO At rated Voltage Max 0.1 mA DC Current Gain hFE VCE = 5V, IC = 1.5A Min 8 hFEL VCE = 5V, IC

4.9. 2sc4580.pdf Size:236K _inchange_semiconductor

2SC4589
2SC4589
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4580 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) ·Fast Switching speed APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 450 V VCEX Collector-Emitter Voltage VEB= 5V 600 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IBB Base Current-Continuous 4 A IBM Base Current-Peak 8 A Total Power Dissipation PT @ TC=25? 50 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 2.5 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4580 ELECTRICAL CHARACT

4.10. 2sc4582.pdf Size:91K _inchange_semiconductor

2SC4589
2SC4589
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4582 DESCRIPTION ·With TO-3PML package ·High voltage,high speed ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 15 A ICM Collector current-peak 30 A IB Base current 6 A IBM Base current-peak 12 A PC Collector power dissipation TC=25? 75 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 1.67 ?/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4582 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PA

4.11. 2sc4581.pdf Size:91K _inchange_semiconductor

2SC4589
2SC4589
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4581 DESCRIPTION ·With TO-3PML package ·High voltage,high speed ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A ICM Collector current-peak 20 A IB Base current 4 A IBM Base current-peak 8 A PC Collector power dissipation TC=25? 65 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 1.92 ?/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4581 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER

4.12. 2sc4584.pdf Size:91K _inchange_semiconductor

2SC4589
2SC4589
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4584 DESCRIPTION ·With TO-3PML package ·High voltage,high speed ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1200 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 6 A ICM Collector current-peak 12 A IB Base current 3 A IBM Base current-peak 6 A PC Collector power dissipation TC=25? 65 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 1.92 ?/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4584 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PAR

4.13. 2sc4583.pdf Size:270K _inchange_semiconductor

2SC4589
2SC4589
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4583 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·Fast Switching speed APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 6 A IBB Base Current-Continuous 1 A IBM Base Current-Peak 2 A Total Power Dissipation PT @ TC=25? 50 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 2.5 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4583 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified

See also transistors datasheet: 2SC4579 , 2SC458 , 2SC4580 , 2SC4581 , 2SC4582 , 2SC4583 , 2SC4584 , 2SC4585 , 9014 , 2SC458K , 2SC458L , 2SC458LG , 2SC459 , 2SC4596 , 2SC4597 , 2SC4598 , 2SC4599 .

Keywords

 2SC4589 Datasheet  2SC4589 Datenblatt  2SC4589 RoHS  2SC4589 Distributor
 2SC4589 Application Notes  2SC4589 Component  2SC4589 Circuit  2SC4589 Schematic
 2SC4589 Equivalent  2SC4589 Cross Reference  2SC4589 Data Sheet  2SC4589 Fiche Technique

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