2SC497 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC497
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO39
2SC497 Transistor Equivalent Substitute - Cross-Reference Search
2SC497 Datasheet (PDF)
2sa1875 2sc4976.pdf
Ordering number : ENN5507B2SA1875 / 2SC4976PNP / NPN Epitaxial Planar Silicon Transistors2SA1875 / 2SC4976High-Definition CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High fT : fT=400MHz(typ). unit : mm High breakdown voltage : VCEO200V(min). 2045B Large current capacitance.[2SA1875 / 2SC4976] Small reverse transfer capacitance and excelle
2sc4976.pdf
SMD Type TransistorsNPN Transistors2SC4976TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features High fT : fT=400MHz(typ). High breakdown voltage Large current capacitance. 0.127+0.10.80-0.1max Complementary to 2SA1875+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Rati
2sc4977.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4977 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) Fast Switching Speed Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max.)@ IC= 4.0A APPLICATIONS Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are parti
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
