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2SC557 Transistor (IC) Datasheet. Cross Reference Search. 2SC557 Equivalent

Type Designator: 2SC557

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 20

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 2

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz: 175

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of 2SC557 transistor: TO60

2SC557 Transistor Equivalent Substitute - Cross-Reference Search

2SC557 PDF:

1.1. 2sc5570.pdf Size:349K _toshiba

2SC557
2SC557

2SC5570 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5570 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collec

1.2. 2sc5578.pdf Size:40K _sanyo

2SC557
2SC557

Ordering number:ENN6297 NPN Triple Diffused Planar Silicon Transistor 2SC5578 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit:mm High breakdown voltage (VCBO=1600V). 2048B High reliability (Adoption of HVP process). [2SC5578] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6 1.2 1 : Base 1 2 3

1.3. 2sc5577.pdf Size:40K _sanyo

2SC557
2SC557

Ordering number:ENN6281 NPN Triple Diffused Planar Silicon Transistor 2SC5577 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High breakdown voltage (VCBO=1500V). 2048B High reliability (Adoption of HVP process). [2SC5577] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6 1.2

1.4. 2sc5574.pdf Size:52K _rohm

2SC557
2SC557

2SC5574 Transistors Power Transistor (80V, 4A) 2SC5574 Features External dimensions (Units : mm) 1) Low saturation voltage. (Typ. VCE(sat) = 0.3V at IC / IB =2 / 0.2A) 10.0 4.5 2) Excellent DC current gain characteristics. 3.2 2.8 ? 3) Pc = 30W (Tc = 25C) 4) Wide SOA (safe operating area). 1.2 1.3 5) Complements the 2SA2017. 0.8 0.75 2.54 2.54 2.6 (1) (2) (3) ( ) (1) (2) (3

1.5. 2sc5576.pdf Size:49K _rohm

2SC557
2SC557

2SC5576 Transisitors Medium Power Transistor (Motor or Relay drive) (6010V, 4A) 2SC5576 Features Circuit diagram 1) Built-in zener diode between collector and base. C 2) Strong protection against reverse power surges due to "L" loads. B 3) Built-in resistor between base and emitter. 4) Built-in damper diode. R1 R2 E B : Base R1 4.5k? C : Collector R2 300? E : Emitter Absol

1.6. 2sc5575.pdf Size:52K _rohm

2SC557
2SC557

2SC5575 Transistors High-voltage Switching Transisitor (Power Supply) (120V, 7A) 2SC5575 Features External dimensions (Units : mm) 1) Low VCE(sat). (Typ. 0.17V at IC / IB = 5 / 0.5A) 2) Fast switching. (tf : Typ. 0.18s at IC = 5A) 3) Wide SOA. (safe operating area) 10.0 4.5 3.2 2.8 ? Absolute maximum ratings (Ta = 25C) 1.2 1.3 Parameter Symbol Limits Unit 0.8 Collector-base

1.7. 2sc5572.pdf Size:71K _panasonic

2SC557
2SC557

See also transistors datasheet: 2SC550 , 2SC551 , 2SC552 , 2SC553 , 2SC554 , 2SC555 , 2SC555D , 2SC556 , 431 , 2SC557D , 2SC558 , 2SC559 , 2SC56 , 2SC560 , 2SC560N , 2SC561 , 2SC562 .

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