2SC577 Datasheet, Equivalent, Cross Reference Search

Ordering number : ENN69922SC5778NPN Triple Diffused Planar Silicon Transistor2SC5778Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1600V).2174A High reliability(Adoption of HVP process). Adoption of MBIT process.[2SC5778] On-chip damper diode.5.6

Ordering number : ENN69912SC5777NPN Triple Diffused Planar Silicon Transistor2SC5777Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage (VCBO=1600V).2174A High reliability (Adoption of HVP process).[2SC5777] Adoption of MBIT process.5.63.4 On-chip damper d

Ordering number : ENN69882SA2063 / 2SC5775PNP Epitaxial Planar Silicon TransistorNPN Triple Diffused Planar Silicon Transistor2SA2063 / 2SC5775160V / 12A, AF90W Output ApplicationsFeatures Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process.[2SA2063 / 2SC5775]15.63.24.814.02

Ordering number : ENN69872SA2062 / 2SC5774PNP Epitaxial Planar Silicon TransistorNPN Triple Diffused Planar Silicon Transistor2SA2062 / 2SC5774140V / 10A, AF 70W Output ApplicationsFeatures Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process.[2SA2062 / 2SC5774]15.63.24.814.0

Ordering number : ENN69902SC5776NPN Triple Diffused Planar Silicon Transistor2SC5776Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage (VCBO=1600V).2174A High reliability (Adoption of HVP process).[2SC5776] Adoption of MBIT process.5.63.416.0 On-chip da

Power Transistors2SC5779Silicon NPN epitaxial planar typeUnit: mm4.60.2Power supply for Audio & Visual equipments 9.90.32.90.2such as TVs and VCRs 3.20.1Industrial equipments such as DC-DC converters Features High-speed switching (tstg: storage time/tf: fall time is short)1.40.2 Low collector-emitter saturation voltage VCE(sat) 2.60.11.60.2

2SC5773Silicon NPN EpitaxialUHF / VHF wide band amplifierADE-208-1391(Z)Preliminary 1st. EditionMar. 2001Features High gain bandwidth productfT = 10.8 GHz typ. High power gain and low noise figure ;PG = 11.9 dB typ., NF = 1.1 dB typ. at f = 900 MHzOutlineMPAK311. Emitter22. Base3. CollectorNote: Marking is JR-.This data sheet contains tentativ

2SC5772Silicon NPN EpitaxialUHF / VHF wide band amplifierADE-208-1390 (Z)Preliminary 1st. EditionMar. 2001Features High gain bandwidth productfT = 9 GHz typ. High power gain and low noise figure ;PG = 13 dB typ., NF = 1.1 dB typ. at f = 900 MHzOutlineMPAK311. Emitter22. Base3. CollectorNote: Marking is FR-.This data sheet contains tentative sp

SMD Type TransistorsNPN Transistors2SC5773SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=80mA1 2 Collector Emitter Voltage VCEO=6V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collect

SMD Type TransistorsNPN Transistors2SC5772SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=75mA1 2 Collector Emitter Voltage VCEO=9V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC5772DESCRIPTIONHigh Gain Bandwidth Productf = 9 GHz TYP.THigh power gain and low noise figure ;PG = 13 dB TYP., NF = 1.1 dB typ. @ f = 900 MHz100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in UHF ~ VHF wide band amplifier.