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2SC897 Transistor. Datasheet pdf. Equivalent

Type Designator: 2SC897

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

2SC897 Transistor Equivalent Substitute - Cross-Reference Search

2SC897 Datasheet PDF:

5.1. 2sc898.pdf Size:194K _inchange_semiconductor

2SC897
2SC897

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC898 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 6A APPLICATIONS ·Designed for amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V

Datasheet: 2SC890 , 2SC891 , 2SC892 , 2SC893 , 2SC894 , 2SC895 , 2SC895-1 , 2SC896 , SS8050 , 2SC897A , 2SC898 , 2SC898A , 2SC899 , 2SC89H , 2SC90 , 2SC900 , 2SC900E .

 


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