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2N2217-51 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N2217-51

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.8

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 30

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.8

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz: 250

Collector capacitance (Cc), pF: 8

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of 2N2217-51 transistor: TO51

2N2217-51 Equivalent Transistors - Cross-Reference Search

2N2217-51 PDF document for downloads:

5.1. 2n2219_2n2219a_3.pdf Size:55K _philips

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N2219; 2N2219A NPN switching transistors 1997 Sep 03 Product specification Supersedes data of 1997 May 07 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistors 2N2219; 2N2219A FEATURES PINNING • High current (max. 800 mA) PIN DESCRIPTION • Low voltage (max. 40 V). 1 emitter 2 base APPLICATIONS 3 collector, connected to case • High-speed switching • DC and VHF/UHF amplification, for 2N2219 only. 1 handbook, halfpage 3 2 DESCRIPTION 2 NPN switching transistor in a TO-39 metal package. PNP complement: 2N2905 and 2N2905A. 1 3 MAM317 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 2N2219 - 60 V 2N2219A - 75 V VCEO collector-emitter voltage open base 2N2219 - 30 V 2N2219A - 40 V IC collector current (DC) - 800 mA Ptot total power diss

5.2. 2n2218-2n2219-2n2221-2n2222.pdf Size:71K _st

2N2218-2N2219 2N2221-2N2222 HIGH-SPEED SWITCHES DESCRIPTION The 2N2218, 2N2219, 2N2221 and 2N2222 are sili- con planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature use- ful current gain over a wide range of collector cur- rent, low leakage currents and low saturation volt- ages. 2N2218/2N2219 approved to CECC 50002- TO-39 TO-18 100, 2N2221/2N2222 approved to CECC 50002-101 available on request. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-base Voltage (IE =0) 60 V VCEO Collector-emitter Voltage (IB = 0) 30 V VEBO Emitter-base Voltage (IC =0) 5 V IC Collector Current 0.8 A Pto t Total Power Dissipation at T ? 25 °C amb for 2N2218 and 2N2219 0.8 W for 2N2221 and 2N2222 0.5 W at Tcase ? 25 °C for 2N2218 and 2N2219 3 W for 2N2221 and

5.3. 2n2219a_2n2222a.pdf Size:166K _st

2N2219A 2N2222A ® HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Base Voltage (I = 0) 75 V CBO E V Collector-Emitter Voltage (I = 0) 40 V CEO B VEBO Emitter-Base Voltage (IC = 0) 6 V IC Collector Current 0.6 A ICM Collector Peak Current (tp < 5 ms) 0.8 A Ptot Total Dissipation at Tamb ? 25 oC 0.8 W for 2N2219A 0.5 W for 2N2222A at T ? 25 oC C 3 W for 2N2219A 1.8 W for 2N2222A o Tstg Storage Temperature -65 to 175 C o Tj Max. Operating Junction Temperature 175 C 1/7 February 2003 2N2219

5.4. 2n2222a_2n2219a.pdf Size:168K _st

2N2219A 2N2222A ® HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Base Voltage (I = 0) 75 V CBO E V Collector-Emitter Voltage (I = 0) 40 V CEO B VEBO Emitter-Base Voltage (IC = 0) 6 V IC Collector Current 0.6 A ICM Collector Peak Current (tp < 5 ms) 0.8 A Ptot Total Dissipation at Tamb ? 25 oC 0.8 W for 2N2219A 0.5 W for 2N2222A at T ? 25 oC C 3 W for 2N2219A 1.8 W for 2N2222A o Tstg Storage Temperature -65 to 175 C o Tj Max. Operating Junction Temperature 175 C 1/7 February 2003 2N2219

5.5. 2n2218-a_2n2219-a.pdf Size:56K _central

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

5.6. 2n2219a(to-39).pdf Size:327K _mcc

MCC TM Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth 2N2219A CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 SWITCHING Features Features TRANSISTOR • Collector - Base Voltage 75 V • Collector - Current 800 mA • Medium Current, Bipolar Transistor SMALL SIGNAL • Marking: Type number BIPOLAR • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates NPN SILICON RoHS Compliant. See ordering information) TO-39 ABSOLUTE MAXIMUM RATINGS Collector - Emitter Voltage VCEO 50 Vdc Collector - Base Voltage VCBO 75 Vdc Emitter - Base Voltage VEBO 6 Vdc Collector Current - Continuous IC 800 mAdc Total Device Dissipation @ TA = 25 °C PD 0.8 WATTS ° Derate above 25 °C 4.6 mW/°C ° ° Total Device Dissipation @ TC = 25 °C PD 1.0 WATTS ° Derate above 25 °C 17.0 mW/°C ° ° Operating Junction&Storage Temperature Range TJ, Tstg - 55 to +200 °C ° Thermal Characteristics CHARACTERISTIC SYMBOL MAX UNIT Thermal Resistanc

5.7. 2n2218_2n2219.pdf Size:58K _microsemi

TECHNICAL DATA NPN SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 Devices Qualified Level JAN 2N2218 2N2219 JANTX 2N2218A 2N2219A JANTXV 2N2218AL 2N2219AL JANS MAXIMUM RATINGS 2N2218 2N2218A; L Ratings Symbol Unit 2N2219 2N2219A; L Collector-Emitter Voltage 30 50 Vdc VCEO Collector-Base Voltage 60 75 Vdc VCBO TO- 39* (TO-205AD) Emitter-Base Voltage 5.0 6.0 Vdc VEBO 2N2218, 2N2218A Collector Current 800 mAdc IC 2N2219, 2N2219A Total Power Dissipation @ T = +250C(1) 0.8 W A PT @ T = +250C(2) 3.0 W C 0 Operating & Storage Junction Temp. Range -55 to +200 C Top, Tstg THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit 0 Thermal Resistance, Junction-to-Case 59 C/W R?JC TO-5* 1) Derate linearly 4.6 mW/0C above T > +250C A 2N2218AL, 2) Derate linearly 17.0 mW/0C above T > +250C C 2N2219AL *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise

See also transistors datasheet: 2N2208 , 2N2209 , 2N2210 , 2N2211 , 2N2212 , 2N2214 , 2N2216 , 2N2217 , 2N4401 , 2N2217A , 2N2218 , 2N2218A , 2N2218AQF , 2N2218AS , 2N2218S , 2N2219 , 2N2219A .

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