All Transistors. 2SD1077L Datasheet

 

2SD1077L Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD1077L
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2.5 A
   Max. Operating Junction Temperature (Tj): 180 °C
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: TO218

 2SD1077L Transistor Equivalent Substitute - Cross-Reference Search

   

2SD1077L Datasheet (PDF)

 8.1. Size:97K  fuji
2sd1073.pdf

2SD1077L
2SD1077L

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

 8.2. Size:135K  fuji
2sd1072.pdf

2SD1077L
2SD1077L

 8.3. Size:102K  fuji
2sd1071.pdf

2SD1077L
2SD1077L

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

 8.4. Size:69K  inchange semiconductor
2sd1073.pdf

2SD1077L
2SD1077L

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1073 DESCRIPTION With TO-220 package High DC current gain DARLINGTON Low saturation voltage APPLICATIONS Audio power amplifiers Relay and solenoid drivers Motor controls General purpose power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting ba

 8.5. Size:189K  inchange semiconductor
2sd1072.pdf

2SD1077L
2SD1077L

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1072DESCRIPTIONLow Collector Saturation VoltageHigh DC Current GainHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC converterSolid state relayGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T

 8.6. Size:213K  inchange semiconductor
2sd1071.pdf

2SD1077L
2SD1077L

isc Silicon NPN Darlington Power Transistor 2SD1071DESCRIPTIONLow Collector Saturation VoltageHigh DC Current GainHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio power amplifiersRelay & solenoid driversMotor controlsGeneral purpose power amplifiersIncluding zener diodeABSOLUTE MAXIMUM

 8.7. Size:186K  inchange semiconductor
2sd1070.pdf

2SD1077L
2SD1077L

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1070DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BCW66RG | FMMT493A | 2SB892S | 556BCYA | ZXTP05120HFF | BC728-10 | 2SA1492P

 

 
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