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2N2218S
Transistor Datasheet. Parameters and Characteristics. Type Designator: 2N2218S
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.8
Maximum collector-base voltage |Ucb|, V: 60
Maximum collector-emitter voltage |Uce|, V: 30
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 0.8
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz: 250
Collector capacitance (Cc), pF: 8
Forward current transfer ratio (hFE), min: 40
Noise Figure, dB: - Package of 2N2218S
transistor: TO39
2N2218S
Equivalent Transistors - Cross-Reference Search 2N2218S
PDF document for downloads:
4.1. 2n2218-2n2219-2n2221-2n2222.pdf Size:71K _st |
| 2N2218-2N2219
2N2221-2N2222
HIGH-SPEED SWITCHES
DESCRIPTION
The 2N2218, 2N2219, 2N2221 and 2N2222 are sili-
con planar epitaxial NPN transistors in Jedec
TO-39 (for 2N2218 and 2N2219) and in Jedec
TO-18 (for 2N2221 and 2N2222) metal cases. They
are designed for high-speed switching applications
at collector currents up to 500 mA, and feature use-
ful current gain over a wide range of collector cur-
rent, low leakage currents and low saturation volt-
ages.
2N2218/2N2219 approved to CECC 50002-
TO-39
TO-18
100, 2N2221/2N2222 approved to CECC
50002-101 available on request.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-base Voltage (IE =0) 60 V
VCEO Collector-emitter Voltage (IB = 0) 30 V
VEBO Emitter-base Voltage (IC =0) 5 V
IC Collector Current 0.8 A
Pto t Total Power Dissipation at T ? 25 °C
amb
for 2N2218 and 2N2219 0.8 W
for 2N2221 and 2N2222 0.5 W
at Tcase ? 25 °C
for 2N2218 and 2N2219 3 W
for 2N2221 and |
4.2. 2n2218-a_2n2219-a.pdf Size:56K _central |
| 145 Adams Avenue, Hauppauge, NY 11788 USA
Tel: (631) 435-1110 • Fax: (631) 435-1824
|
4.3. 2n2218_2n2219.pdf Size:58K _microsemi |
| TECHNICAL DATA
NPN SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/251
Devices Qualified Level
JAN
2N2218 2N2219
JANTX
2N2218A 2N2219A
JANTXV
2N2218AL 2N2219AL
JANS
MAXIMUM RATINGS
2N2218 2N2218A; L
Ratings Symbol Unit
2N2219 2N2219A; L
Collector-Emitter Voltage 30 50 Vdc
VCEO
Collector-Base Voltage 60 75 Vdc
VCBO
TO- 39* (TO-205AD)
Emitter-Base Voltage 5.0 6.0 Vdc
VEBO
2N2218, 2N2218A
Collector Current 800 mAdc
IC
2N2219, 2N2219A
Total Power Dissipation @ T = +250C(1) 0.8 W
A
PT
@ T = +250C(2) 3.0 W
C
0
Operating & Storage Junction Temp. Range
-55 to +200 C
Top, Tstg
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
0
Thermal Resistance, Junction-to-Case 59 C/W
R?JC
TO-5*
1) Derate linearly 4.6 mW/0C above T > +250C
A 2N2218AL,
2) Derate linearly 17.0 mW/0C above T > +250C
C
2N2219AL
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise |
See also transistors datasheet: 2N2216
, 2N2217
, 2N2217-51
, 2N2217A
, 2N2218
, 2N2218A
, 2N2218AQF
, 2N2218AS
, AC187
, 2N2219
, 2N2219A
, 2N2219AL
, 2N2219AQF
, 2N2219AS
, 2N2219S
, 2N222
, 2N2220
. Keywords| 2N2218S
Datasheet | 2N2218S
Datenblatt | 2N2218S
RoHS | 2N2218S
Distributor | | 2N2218S
Application Notes | 2N2218S
Component | 2N2218S
Circuit | 2N2218S
Schematic | | 2N2218S
Equivalent | 2N2218S
Cross Reference | 2N2218S
Data Sheet | 2N2218S
Fiche Technique |
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