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2SD1092
  2SD1092
  2SD1092
 
2SD1092
  2SD1092
  2SD1092
 
2SD1092
  2SD1092
 
 
List
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
2SD1092 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SD1092 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SD1092

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 80

Maximum collector-base voltage |Ucb|, V: 55

Maximum collector-emitter voltage |Uce|, V: 55

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 4

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 500

Noise Figure, dB: -

Package of 2SD1092 transistor: TO247

2SD1092 Equivalent Transistors - Cross-Reference Search

2SD1092 PDF doc:

1.1. 2sd1092.pdf Size:285K _toshiba

2SD1092
2SD1092

4.1. 2sd1090.pdf Size:197K _toshiba

2SD1092
2SD1092

5.1. 2sd1069.pdf Size:133K _toshiba

2SD1092
2SD1092
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.2. 2sd1052a.pdf Size:113K _toshiba

2SD1092
2SD1092
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.3. 2sd1012.pdf Size:57K _sanyo

2SD1092
2SD1092
Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1.3 1.3 1 : Emitter 2 : Collector ( ) : 2SB808 3 : Base 3.0 3.8 SANYO : SPA Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()20 V Collector-to-Emitter Voltage VCEO ()15 V Emitter-to-Base Voltage VEBO ()5 V Collector Current IC ()0.7 A Collector Current (Pulse) ICP ()1.5 A Collector Dissipation PC 250 mW Junction Temperature Tj 125 ?C Storage Temperature Tstg 55 to +125 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=()15V, IE=0 ()1.0 A Emitter Cutoff Current IEBO VEB=()4V, IC=0 ()1.0 A hFE1 VCE=()2V, IC=()50mA 160* 960* DC Current Gain hFE2 VCE=()2V, IC=()500mA P

5.4. 2sd1047.pdf Size:125K _sanyo

2SD1092
2SD1092
Ordering number:680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Features Package Dimensions Capable of being mounted easily because of one- unit:mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817/2SD1047] Wide ASO because of on-chip ballast resistance. Good depenedence of fT on current and excellent high frequency responce. The descriptions in parentheses are for the 2SB817 only : other descriptions than those in parentheses are common to the 2SB817 and 2SD1047. 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()160 V Collector-to-Emitter Voltage VCEO ()140 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()12 A Collector Current (Pulse) ICP ()15 A Tc=25?C Collector Dissipation

5.5. 2sb817p_2sd1047p.pdf Size:30K _sanyo

2SD1092
2SD1092
Ordering number : ENN6572 2SB817P / 2SD1047P 2SB817P : PNP Epitaxial Planar Silicon Transistor 2SD1047P : NPN Triple Diffused Planar Silicon Transistor 2SB817P / 2SD1047P 140V / 12A, AF80W Output Applications Features Package Dimensions Capable of being mounted easily because of one- unit : mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817P / 2SD1047P] Wide ASO because of built-in ballast resistance. Goode dependence of fT on current and good HF 15.6 3.2 4.8 14.0 2.0 characteristic. 1.6 2.0 0.6 1.0 1 2 3 1 : Base 0.6 2 : Collector 3 : Emitter Specifications 5.45 5.45 SANYO : TO-3PB ( ) : 2SB817P Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (-)160 V Collector-to-Emitter Voltage VCEO (-)140 V Emitter-to-Base Voltage VEBO (-)6 V Collector Current IC (-)12 A Collector Current (Pulse) ICP (-)15 A Collector Dissipation PC Tc=25C 120 W Junction

5.6. 2sd1065.pdf Size:119K _sanyo

2SD1092
2SD1092
Ordering number:825C PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB829/2SD1065 50V/15A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit:mm other general high-current switching applications. 2022A [2SD829/2SD1065] Features Low-saturation collector-to-emitter voltage : VCE(sat) =0.5V max. Wide ASO leading to high resistance to breakdown. 1 : Base 2 : Collector 3 : Emitter ( ) : 2SB829 SANYO : TO-3PB Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()60 V Collector-to-Emitter Voltage VCEO ()50 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()15 A Collector Current (Pulse) ICP ()20 A Collector Dissipation PC Tc=25?C 90 W ?C Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Colle

5.7. 2sd1047p.pdf Size:30K _sanyo

2SD1092
2SD1092
Ordering number : ENN6572 2SB817P / 2SD1047P 2SB817P : PNP Epitaxial Planar Silicon Transistor 2SD1047P : NPN Triple Diffused Planar Silicon Transistor 2SB817P / 2SD1047P 140V / 12A, AF80W Output Applications Features Package Dimensions Capable of being mounted easily because of one- unit : mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817P / 2SD1047P] Wide ASO because of built-in ballast resistance. Goode dependence of fT on current and good HF 15.6 3.2 4.8 14.0 2.0 characteristic. 1.6 2.0 0.6 1.0 1 2 3 1 : Base 0.6 2 : Collector 3 : Emitter Specifications 5.45 5.45 SANYO : TO-3PB ( ) : 2SB817P Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (-)160 V Collector-to-Emitter Voltage VCEO (-)140 V Emitter-to-Base Voltage VEBO (-)6 V Collector Current IC (-)12 A Collector Current (Pulse) ICP (-)15 A Collector Dissipation PC Tc=25C 120 W Junction

5.8. 2sd1064.pdf Size:104K _sanyo

2SD1092
2SD1092
Ordering number:722G PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB828/2SD1064 50V/12A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit:mm other general high-current switching applications. 2022A [2SB828/2SD1064] Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.5V(PNP), 0.4V(NPN) max. Wide ASO leading to high resistance to breakdown. 1 ; Base 2 : Collector 3 : Emitter ( ) : 2SB828 Specifications SANYO : TO-3PB Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()60 V Collector-to-Emitter Voltage VCEO ()50 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()12 A Collector Current (Pulse) ICP ()17 A Collector Dissipation PC 80 W Tc=25?C Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit mi

5.9. 2sd1062.pdf Size:104K _sanyo

2SD1092
2SD1092
Ordering number:723H PNP/NPN Epitaxial Planar Silicon Transistors 2SB826/2SD1062 50V/12A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit:mm other general high-current switching applications. 2010C [2SB826/2SD1062] Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.5V (PNP), 0.4V (NPN) max. Wide ASO leading to high resistance to breakdown. 1 : Base 2 : Collector 3 : Emitter ( ) : 2SB826 JEDEC : TO-220AB EIAJ : SC46 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()60 V Collector-to-Emitter Voltage VCEO ()50 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()12 A Collector Current (Pulse) ICP ()15 A Collector Dissipation PC Tc=25?C 40 W ?C Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Condi

5.10. 2sd1063.pdf Size:102K _sanyo

2SD1092
2SD1092
Ordering number:688H PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB827/2SD1063 50V/7A Switching Applicationsa Applications Package Dimensions Universal high current switching as solenoid driving, unit:mm high speed inverter and converter. 2022A [2SB827/2SD1063] Features Low collector-to-emitter saturation voltage : VCE(sat)=()0.4V max. Wide ASO. 1 : Base 2 : Collector 3 : Emitter ( ) : 2SB827 SANYO : TO-3PB Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()60 V Collector-to-Emitter Voltage VCEO ()50 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()7 A Collector Current (Pulse) ICP ()14 A Collector Dissipation PC Tc=25?C 60 W ?C Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=()40V, IE=0 ()0.1 mA Em

5.11. 2sd1046.pdf Size:115K _sanyo

2SD1092
2SD1092
Ordering number:677D PNP/NPN Epitaxial Planar Silicon Transistors 2SB816/2SD1046 For LF Power Amplifier, 50W Output Large Power Switching Applications Features Package Dimensions Capable of being mounted easily because of one- unit:mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB816/2SD1046] Wide ASO because of built-in ballast resistance. Goode dependence of fT on current and good HF characteristic. 1 : Base 2 : Collector 3 : Emitter ( ) : 2SB816 SANYO : TO-3PB Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()150 V Collector-to-Emitter Voltage VCEO ()120 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()8 A Collector Current (Pulse) ICP ()12 A Collector Dissipation PC Tc=25?C 80 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 40 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol C

5.12. 2sb815_2sd1048.pdf Size:239K _sanyo

2SD1092
2SD1092
Ordering number : ENN694F 2SB815 / 2SD1048 PNP / NPN Epitaxial Planar Silicon Transistors 2SB815 / 2SD1048 General-Purpose AF Amplifier Applications Features Package Dimensions Ultrasmall package allows miniaturization unit : mm in end products. 2018B Large current capacity (IC=0.7A) and low-saturation [2SB815 / 2SD1048] voltage. 0.4 0.16 3 0 to 0.1 1 0.95 0.95 2 1.9 1 : Base 2.9 2 : Emitter 3 : Collector Specifications SANYO : CP ( ) : 2SB815 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)20 V Collector-to-Emitter Voltage VCEO (--)15 V Emitter-to-Base Voltage VEBO (--)5 V Collector Current IC (--)0.7 A Collector Current (Pulse) ICP (--)1.5 A Collector Dissipation PC 200 mW Junction Temperature Tj 125 C Storage Temperature Tstg --55 to +125 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=(--)15V, I

5.13. 2sd1061.pdf Size:102K _sanyo

2SD1092
2SD1092
Ordering number:687G PNP/NPN Epitaxial Planar Silicon Transistors 2SB825/2SD1061 50V/7A Switching Applications Applications Package Dimensions Universal high current switching as solenoid driving, unit:mm high speed inverter and converter. 2010C [2SB825/2SD1061] Features Low saturation voltage : VCE(sat)=()0.4V max. Wide ASO JEDEC : TO-220AB 1: Base ( ) : 2SB825 EIAJ : SC-46 2 : Collector 3 : Emitter Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()60 V Collector-to-Emitter Voltage VCEO ()50 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()7 A Collector Current (Pulse) ICP ()12 A Collector Dissipation PC Tc=25?C 40 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=()40V, IE=0 ()0.1 mA Emitter Cutoff Cu

5.14. 2sd1048.pdf Size:21K _sanyo

2SD1092
2SD1092
Ordering number : ENN694F 2SB815 / 2SD1048 PNP / NPN Epitaxial Planar Silicon Transistors 2SB815 / 2SD1048 General-Purpose AF Amplifier Applications Features Package Dimensions Ultrasmall package allows miniaturization unit : mm in end products. 2018B Large current capacity (IC=0.7A) and low-saturation [2SB815 / 2SD1048] voltage. 0.4 0.16 3 0 to 0.1 1 0.95 0.95 2 1.9 1 : Base 2.9 2 : Emitter 3 : Collector Specifications SANYO : CP ( ) : 2SB815 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)20 V Collector-to-Emitter Voltage VCEO (--)15 V Emitter-to-Base Voltage VEBO (--)5 V Collector Current IC (--)0.7 A Collector Current (Pulse) ICP (--)1.5 A Collector Dissipation PC 200 mW Junction Temperature Tj 125 C Storage Temperature Tstg --55 to +125 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=(--)15V, I

5.15. 2sd1060.pdf Size:55K _sanyo

2SD1092
2SD1092
Ordering number : EN686J 2SB824 / 2SD1060 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB824 / 2SD1060 50V / 5A Switching Applications Applications Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching. Features Low collector-to-emitter saturation voltage : VCE(sat)= (--)0.4V max / IC= (--)3A, IB= (--)0.3A. Specifications ( ) : 2SB824 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)60 V Collector-to-Emitter Voltage VCEO (--)50 V Emitter-to-Base Voltage VEBO (--)6 V Collector Current IC (--)5 A Collector Current (Pulse) ICP (--)9 A 1.75 W Collector Dissipation PC Tc=25C30 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=(--)40V, IE=0A (--)0.1 mA Emitter Cutoff

5.16. 2sd1006_2sd1007.pdf Size:223K _nec

2SD1092
2SD1092

5.17. 2sd1020.pdf Size:132K _nec

2SD1092
2SD1092

5.18. 2sd1000.pdf Size:218K _nec

2SD1092
2SD1092

5.19. 2sd1001.pdf Size:208K _nec

2SD1092
2SD1092

5.20. 2sd1005.pdf Size:211K _nec

2SD1092
2SD1092

5.21. 2sd1033.pdf Size:201K _nec

2SD1092
2SD1092

5.22. 2sd1055.pdf Size:124K _rohm

2SD1092
2SD1092
Transistors Medium Power Transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M FFeatures FExternal dimensions (Units: mm) 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M FStructure Epitaxial planar type NPN silicon transistor (96-217-B24) 256 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / Transistors Transistors 2SD1919 / 2SD1227M FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C) 257 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / Transistors Transistors 2SD1919 / 2SD1227M FPackaging specifications and hFE hFE values are classified as follows : FElectrical characteristic curves 258 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / Transistors Transistors 2SD1919 / 2SD1227M 259

5.23. 2sd1051_e.pdf Size:44K _panasonic

2SD1092
2SD1092
Transistor 2SD1051 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm Complementary to 2SB819 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features High collector to emitter voltage VCEO. Large collector power dissipation PC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Absolute Maximum Ratings (Ta=25?C) 3 2 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V 2.5 2.5 Collector to emitter voltage VCEO 40 V Emitter to base voltage VEBO 5 V Peak collector current ICP 3 A 1:Base 2:Collector EIAJ:SC71 Collector current IC 1.5 A 3:Emitter M Type Mold Package Collector power dissipation PC* 1 W Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion Electrical Characteristics (Ta=25?C) P

5.24. 2sd1010.pdf Size:38K _panasonic

2SD1092
2SD1092
Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 0.45 0.1 0.45 0.1 Parameter Symbol Ratings Unit 1.27 1.27 Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V 1 2 3 1:Emitter Emitter to base voltage VEBO 15 V 2:Collector Peak collector current ICP 100 mA 3:Base 2.54 0.15 JEDEC:TO92 Collector current IC 50 mA EIAJ:SC43A Collector power dissipation PC 300 mW Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 20V, IE = 0 100 nA Collector cutoff current ICEO VCE = 20V, IB = 0 1 A Collector to base voltage VCBO IC = 10 A, IE = 0 50 V Collector to emit

5.25. 2sd1011_e.pdf Size:42K _panasonic

2SD1092
2SD1092
Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 100 V 1.27 1.27 Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 15 V 1 2 3 1:Emitter Peak collector current ICP 50 mA 2:Collector Collector current IC 20 mA 3:Base 2.54 0.15 JEDEC:TO92 Collector power dissipation PC 300 mW EIAJ:SC43A Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 60V, IE = 0 100 nA Collector cutoff current ICEO VCE = 60V, IB = 0 1 A Collector to base voltage VCBO IC = 10 A, IE = 0 100 V Collector to emitter voltage VCEO IC =

5.26. 2sd1030.pdf Size:37K _panasonic

2SD1092
2SD1092
Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 High emitter to base voltage VEBO. 3 Low noise voltage NV. Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing and the magazine packing. 0.1 to 0.3 0.4 0.2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V 1:Base JEDEC:TO236 Collector to emitter voltage VCEO 40 V 2:Emitter EIAJ:SC59 3:Collector Mini Type Package Emitter to base voltage VEBO 15 V Peak collector current ICP 100 mA Marking symbol : 1Z Collector current IC 50 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions m

5.27. 2sd1011.pdf Size:42K _panasonic

2SD1092
2SD1092
Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 100 V 1.27 1.27 Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 15 V 1 2 3 1:Emitter Peak collector current ICP 50 mA 2:Collector Collector current IC 20 mA 3:Base 2.54 0.15 JEDEC:TO92 Collector power dissipation PC 300 mW EIAJ:SC43A Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 60V, IE = 0 100 nA Collector cutoff current ICEO VCE = 60V, IB = 0 1 A Collector to base voltage VCBO IC = 10 A, IE = 0 100 V Collector to emitter voltage VCEO IC =

5.28. 2sd1030_e.pdf Size:37K _panasonic

2SD1092
2SD1092
Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 High emitter to base voltage VEBO. 3 Low noise voltage NV. Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing and the magazine packing. 0.1 to 0.3 0.4 0.2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V 1:Base JEDEC:TO236 Collector to emitter voltage VCEO 40 V 2:Emitter EIAJ:SC59 3:Collector Mini Type Package Emitter to base voltage VEBO 15 V Peak collector current ICP 100 mA Marking symbol : 1Z Collector current IC 50 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions m

5.29. 2sd1009.pdf Size:34K _panasonic

2SD1092
2SD1092

5.30. 2sd1051.pdf Size:40K _panasonic

2SD1092
2SD1092
Transistor 2SD1051 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm Complementary to 2SB819 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features High collector to emitter voltage VCEO. Large collector power dissipation PC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Absolute Maximum Ratings (Ta=25?C) 3 2 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V 2.5 2.5 Collector to emitter voltage VCEO 40 V Emitter to base voltage VEBO 5 V Peak collector current ICP 3 A 1:Base 2:Collector EIAJ:SC71 Collector current IC 1.5 A 3:Emitter M Type Mold Package Collector power dissipation PC* 1 W Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion Electrical Characteristics (Ta=25?C) P

5.31. 2sd1010_e.pdf Size:42K _panasonic

2SD1092
2SD1092
Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 0.45 0.1 0.45 0.1 Parameter Symbol Ratings Unit 1.27 1.27 Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V 1 2 3 1:Emitter Emitter to base voltage VEBO 15 V 2:Collector Peak collector current ICP 100 mA 3:Base 2.54 0.15 JEDEC:TO92 Collector current IC 50 mA EIAJ:SC43A Collector power dissipation PC 300 mW Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 20V, IE = 0 100 nA Collector cutoff current ICEO VCE = 20V, IB = 0 1 A Collector to base voltage VCBO IC = 10 A, IE = 0 50 V Collector to emit

5.32. 2sd1049.pdf Size:102K _fuji

2SD1092
2SD1092
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

5.33. 2sd1071.pdf Size:102K _fuji

2SD1092
2SD1092
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

5.34. 2sd1073.pdf Size:97K _fuji

2SD1092
2SD1092
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

5.35. 2sd1072.pdf Size:135K _fuji

2SD1092
2SD1092

5.36. 2sd1088.pdf Size:111K _mospec

2SD1092
2SD1092
A A A

5.37. 2sd1083.pdf Size:56K _no

2SD1092
2SD1092

5.38. 2sd1068.pdf Size:158K _sony

2SD1092
2SD1092

5.39. 2sd1015.pdf Size:39K _sony

2SD1092
2SD1092

5.40. 2sd1005.pdf Size:72K _secos

2SD1092
2SD1092
2SD1005 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES Small Flat Package 4 High Breakdown Voltage Excellent DC Current Gain Linearity 1 2 3 B C A E E C CLASSIFICATION OF hFE(1) Product-Rank 2SD1005-W 2SD1005-V 2SD1005-U B D Range 90~180 135~270 200~400 F G Marking BW BV BU H K J L Collector 2 PACKAGE INFORMATION Millimeter Millimeter REF. REF. Min. Max. Min. Max. 1 A 4.40 4.60 G 0.40 0.58 Package MPQ Leader Size B 3.94 4.25 H 1.50 TYP Base C 1.40 1.60 J 3.00 TYP SOT-89 1K 7 inch D 2.25 2.60 K 0.32 0.52 3 E 1.50 1.85 L 0.35 0.44 Emitter F 0.89 1.20 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage V 80 V CEO Emitter-Base Voltage VEBO 5 V Collector Current-Continuous I 1 A C C

5.41. 2sd1024.pdf Size:301K _shindengen

2SD1092
2SD1092
SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1024 Case : TO-220 (T8L10) 8A NPN RATINGS Unit : mm

5.42. 2sd1032.pdf Size:134K _inchange_semiconductor

2SD1092
2SD1092
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1032 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Large Collector Power Dissipation ·Complement to Type 2SB812 APPLICATIONS ·Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A Collector Power Dissipation PC @ TC=25? 60 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1032 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 60 V Collector-Emitter Saturat

5.43. 2sd1044.pdf Size:257K _inchange_semiconductor

2SD1092
2SD1092
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1044 DESCRIPTION ·High DC Current Gain : hFE= 700(Min.)@ IC= 1A, VCE= 4V ·High Collector-Emitter Breakdown Voltage- : V(BR) CEO= 80V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCER Collector-Emitter Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A IBB Base Current- Continuous 3 A Collector Power Dissipation PC @TC=25? 60 W Tj Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1044 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS

5.44. 2sd1037.pdf Size:128K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1037 DESCRIPTION Ў¤ With MT-200 package Ў¤ Excellent safe operating area Ў¤ High current capability APPLICATIONS Ў¤ For electrical supply ,DC-DC converters and low frequency power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION Ў¤ Absolute maximum ratings (Ta=25°C) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 150 Collector-base voltage Open emitter Collector-emitter voltage Open base 120 6 30 TC=25Ўж 180 150 -55~150 Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Open collector Emitter Fig.1 simplified outline (MT-200) and symbol UNIT V V V A W Ўж Ўж

5.45. 2sd1023.pdf Size:119K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1023 DESCRIPTION Ў¤ With TO-220 package Ў¤ High DC current gain Ў¤ DARLINGTON PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage CONDITIONS Open emitter NDU ICO E SEM ANG INCH Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current-Continuous Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25Ўж TOR 200 200 7 5 8 0.5 1 30 150 -55~150 VALUE UNIT V V V A A A A W Ўж Ўж THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.17 UNIT Ўж /W

5.46. 2sd1088.pdf Size:141K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1088 DESCRIPTION ·With TO-220 package ·High DC current gain ·DARLINGTON APPLICATIONS ·For switching igniter applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 250 V VEBO Emitter-base voltage Open collector 5 V IC Collector current-continuous 6 A ICM Collector current-peak 10 A IB Base current 1 A PD Total power dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1088 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sus

5.47. 2sd1024.pdf Size:119K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1024 DESCRIPTION Ў¤ With TO-220 package Ў¤ High DC current gain Ў¤ DARLINGTON PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg TOR NDU ICO E SEM ANG INCH Collector-base voltage Open emitter 100 Collector-emitter voltage Open base 100 7 Emitter-base voltage Open collector Collector current-Continuous Collector current-Peak 8 12 Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25Ўж 0.5 1 50 150 -55~150 PARAMETER CONDITIONS VALUE UNIT V V V A A A A W Ўж Ўж THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 2.5 UNIT Ўж /W

5.48. 2sd1047.pdf Size:174K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1047 DESCRIPTION Ў¤ Complement to type 2SB817 Ў¤ With TO-3PN package APPLICATIONS Ў¤ Power amplification Ў¤ Low frequency and audio band PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 160 Collector-base voltage Open emitter Collector-emitter voltage Open base 140 6 Emitter-base voltage Open collector Collector current (DC) 12 Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25Ўж 15 100 150 -40~150 UNIT V V V A A W Ўж Ўж

5.49. 2sd1065.pdf Size:257K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1065 DESCRIPTION ·With TO-3PN package ·Complement to type 2SB829 ·Wide area of safe operation ·Low collector saturation voltage APPLICATIONS ·Relay drivers, ·High-speed inverters, ·Converters, ·General high-current switching applications . PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 15 A ICM Collector current -peak 20 A PC Collector power dissipation TC=25? 90 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1065 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMET

5.50. 2sd1049.pdf Size:154K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors · 2SD1049 DESCRIPTION Ў¤ With TO-3PN package Ў¤ High current, Ў¤ High speed switching Ў¤ High reliability APPLICATIONS Ў¤ Switching regulators Ў¤ Motor controls Ў¤ High frequency inverters Ў¤ General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25Ўж ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 120 80 7 25 5 TC=25Ўж 80 150 -55~150 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Open collector Fig.1 simplified outline (TO-3PN) and symbol UNIT V V V A A W Ўж Ўж THERMAL CHARACTERISTICS SYMBOL R¦И jc CHARACTERISTICS Thermal resistance junction to case MAX 1.55 UNIT Ўж /W

5.51. 2sd1026.pdf Size:100K _inchange_semiconductor

2SD1092
2SD1092
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1026 DESCRIPTION ·High DC Current Gain : hFE= 1500(Min.)@ IC= 10A, VCE= 3V ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) APPLICATIONS ·Designed for general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 22 A IBB Base Current- Continuous 1 A IBM Base Current- Peak 2 A Collector Power Dissipation PC @TC=25? 100 W Tj Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 1.25 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD10

5.52. 2sd1064.pdf Size:250K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1064 DESCRIPTION ·With TO-3PN package ·Complement to type 2SB828 ·Wide area of safe operation ·Low collector saturation voltage APPLICATIONS ·Relay drivers, ·High-speed inverters, ·Converters, ·General high-current switching applications . PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 12 A ICM Collector current -peak 17 A PC Collector power dissipation TC=25? 80 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1064 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMET

5.53. 2sd1062.pdf Size:167K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220 package Ў¤ Low collector saturation voltage Ў¤ Complement to type 2SB826 Ў¤ Wide area of safe operation APPLICATIONS Ў¤ Relay drivers, Ў¤ High-speed inverters, Ў¤ Converters Ў¤ General high-current switching applications PINNING PIN 1 2 3 Base DESCRIPTION 2SD1062 Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH Emitter CONDITIONS VALUE 60 Collector-base voltage Open emitter Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25Ўж Open base Open collector 50 6 12 15 40 150 -55~150 Collector;connected to mounting base UNIT V V V A A W Ўж Ўж

5.54. 2sd1073.pdf Size:69K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1073 DESCRIPTION ·With TO-220 package ·High DC current gain ·DARLINGTON ·Low saturation voltage APPLICATIONS ·Audio power amplifiers ·Relay and solenoid drivers ·Motor controls ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 250 V VEBO Emitter-base voltage Open collector 30 V IC Collector current-continuous 4 A IB Base current 0.3 A PC Collector power dissipation TC=25? 60 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? THERMAL CHARACTERISTICS SYMBOL CHARACTERISTICS MAX UNIT R?jc Thermal resistance junction to case 2.0 ?/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2S

5.55. 2sd1022.pdf Size:267K _inchange_semiconductor

2SD1092
2SD1092
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1022 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 3A ·Low Saturation Voltage APPLICATIONS ·Designed for general purpoe amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICP Collector Current-Peak 8 A IBB Base Current-Continuous 0.5 A IBM Base Current-Peak 1 A Collector Power Dissipation PC @ TC=25? 30 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 4.17 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington

5.56. 2sd1063.pdf Size:198K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors · 2SD1063 DESCRIPTION Ў¤ With TO-3PN package Ў¤ Wide area of safe operation Ў¤ Low collector saturation voltage Ў¤ Complement to type 2SB827 APPLICATIONS Ў¤ Universal high current switching as solenoid driving,high speed inverter and converter. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 60 Collector-base voltage Open emitter Collector-emitter voltage Open base 50 6 Emitter-base voltage Open collector Collector current (DC) Collector current -peak Collector power dissipation Junction temperature Storage temperature TC=25Ўж 7 14 60 150 -55~150 UNIT V V V A A W Ўж Ўж

5.57. 2sd1069.pdf Size:131K _inchange_semiconductor

2SD1092
2SD1092
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1069 DESCRIPTION ·High Collector Current Capability ·High Collector Power Dissipation Capability ·Built-in Damper Diode APPLICATIONS ·TV horizontal deflection output applications. ·High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A IBB Base Current-Continuous 2 A Collector Power Dissipation 1.75 Ta=25? PC W Collector Power Dissipation 40 TC=25? Tj Junction Temperature 150 ? Storage Ttemperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1069 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TY

5.58. 2sd1046.pdf Size:202K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors · DESCRIPTION Ў¤ With TO-3PN package Ў¤ Complement to type 2SB816 Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For LF power amplifier, 50W output large power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SD1046 Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 150 Collector-base voltage Open emitter Collector-emitter voltage Open base 120 6 Emitter-base voltage Open collector Collector current Collector current -peak Collector power dissipation Junction temperature Storage temperature TC=25Ўж 8 12 80 150 -40~150 UNIT V V V A A W Ўж Ўж

5.59. 2sd1027.pdf Size:134K _inchange_semiconductor

2SD1092
2SD1092
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1027 DESCRIPTION ·High DC Current Gain : hFE= 1500(Min.)@ IC= 10A, VCE= 3V ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) APPLICATIONS ·Designed for general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 22 A IBB Base Current- Continuous 1 A IBM Base Current- Peak 2 A Collector Power Dissipation PC @TC=25? 100 W Tj Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 1.25 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD10

5.60. 2sd1061.pdf Size:164K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220 package Ў¤ Low collector saturation voltage Ў¤ Wide ASO(safe operating area) Ў¤ Complement to type 2SB825 APPLICATIONS Ў¤ Universal high current switching as solenoid driving, Ў¤ High speed inverter and converter. relay drivers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SD1061 Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 60 Collector-base voltage Open emitter Collector-emitter voltage Open base 50 6 7 12 TC=25Ўж 40 150 -55~150 Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature Open collector UNIT V V V A A W Ўж Ўж

5.61. 2sd103.pdf Size:318K _inchange_semiconductor

2SD1092
2SD1092
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD103 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High Power Dissipation- : PC= 25W(Max)@TC=25? Complement to Type 2SB503 APPLICATIONS ·Designed for audio power amplifier, power switching, DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 3 A IE Emitter Current-Continuous -3 A IBB Base Current-Continuous 1 A Collector Power Dissipation PC @TC=25? 25 W TJ Junction Temperature 150 ? Storage Temperature -65~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD103 ELECTRICAL CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS M

5.62. 2sd1025.pdf Size:119K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1025 DESCRIPTION Ў¤ With TO-220 package Ў¤ High DC current gain Ў¤ DARLINGTON PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg TOR NDU ICO E SEM ANG INCH PARAMETER CONDITIONS VALUE 200 Collector-base voltage Open emitter Collector-emitter voltage Open base 200 7 Emitter-base voltage Open collector Collector current 8 Collector current-Peak 12 Base current 0.5 Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25Ўж 1.0 50 150 -55~150 UNIT V V V A A A A W Ўж Ўж THERMAL CHARACTERISTICS SYMBOL R¦Ё j-C PARAMETER Thermal resistance junction to case VALUE 2.5 UNIT Ўж /W

5.63. 2sd1060.pdf Size:158K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1060 DESCRIPTION Ў¤ With TO-220 package Ў¤ Low collector saturation voltage Ў¤ Complement to type 2SB824 APPLICATIONS Ў¤ Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 60 Collector-base voltage Open emitter Collector-emitter voltage Open base 50 6 5 9 TC=25Ўж 30 150 -55~150 Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature Open collector Emitter UNIT V V V A A W Ўж Ўж

5.64. 2sd1005.pdf Size:337K _htsemi

2SD1092
2SD1092
2SD1005 TRANSISTOR (NPN) SOT-89-3L FEATURES Small Flat Package 1. BASE High Breakdown Voltage Excellent DC Current Gain Linearity 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1 A PC Collector Power Dissipation 500 mW R?JA Thermal Resistance From Junction To Ambient 250 ?/W Tj Junction Temperature 150 ? Tstg Storage Temperature -55~+150 ? ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=0.1mA,IE=0 100 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 80 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 5 V Collector cut-off current ICBO VCB=100V,IE=0 0.1 µA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 µA hFE(1)* VCE=2V, IC=100mA 90 400 DC

See also transistors datasheet: 2SD1084 , 2SD1085 , 2SD1085K , 2SD1087 , 2SD1088 , 2SD1089 , 2SD1090 , 2SD1091 , TIP3055 , 2SD1093 , 2SD1094 , 2SD1095 , 2SD1096 , 2SD1097 , 2SD1098 , 2SD1099 , 2SD11 .

Keywords

 2SD1092 Datasheet  2SD1092 Datenblatt  2SD1092 RoHS  2SD1092 Distributor
 2SD1092 Application Notes  2SD1092 Component  2SD1092 Circuit  2SD1092 Schematic
 2SD1092 Equivalent  2SD1092 Cross Reference  2SD1092 Data Sheet  2SD1092 Fiche Technique

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