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2SD1092
  2SD1092
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2SD1092
  2SD1092
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2SD1092
  2SD1092
 
 
List
100DA025D .. 2N100
2N1000 .. 2N119
2N1190 .. 2N1412A
2N1413 .. 2N1655
2N1656 .. 2N1990R
2N1990S .. 2N2221A
2N2221ACSM .. 2N2484ACSM
2N2484ADCSM .. 2N2773
2N2774 .. 2N2970
2N2971 .. 2N3241A
2N3242 .. 2N3506
2N3506L .. 2N3791SM
2N3792 .. 2N4057
2N4058 .. 2N457A
2N457B .. 2N5101
2N5102 .. 2N5356
2N5357 .. 2N5704
2N5705 .. 2N6022
2N6024 .. 2N634A
2N635 .. 2N6655-2
2N6655A .. 2N819
2N82 .. 2S120
2S121 .. 2SA1079
2SA108 .. 2SA1282
2SA1282A .. 2SA1408R
2SA1409 .. 2SA1577W
2SA1578 .. 2SA183
2SA1830 .. 2SA249
2SA25 .. 2SA496Y
2SA497 .. 2SA725
2SA726 .. 2SA927
2SA928 .. 2SB1102
2SB1103 .. 2SB1261
2SB1261-Z .. 2SB1555B
2SB1555C .. 2SB311
2SB312 .. 2SB511F
2SB512 .. 2SB696K
2SB697 .. 2SB858C
2SB858D .. 2SC1044
2SC1045 .. 2SC1253
2SC1254 .. 2SC1469A
2SC146A .. 2SC169
2SC1698 .. 2SC1924
2SC1925 .. 2SC2196
2SC2197 .. 2SC24
2SC240 .. 2SC2630
2SC2631 .. 2SC2821
2SC2821E .. 2SC306
2SC3060 .. 2SC3262
2SC3263 .. 2SC3443
2SC3444 .. 2SC3617
2SC3618 .. 2SC3780C
2SC3780D .. 2SC3981
2SC3982 .. 2SC4163L
2SC4163M .. 2SC4422
2SC4423 .. 2SC4725
2SC4726 .. 2SC5031N
2SC5031O .. 2SC5323
2SC5324 .. 2SC569
2SC5690 .. 2SC647P
2SC648 .. 2SC847
2SC848 .. 2SD1020G
2SD1020O .. 2SD1218
2SD1219 .. 2SD1402O
2SD1403 .. 2SD1618E
2SD1618S .. 2SD1803
2SD1803Q .. 2SD2017
2SD2018 .. 2SD2342B
2SD2342C .. 2SD313E
2SD313F .. 2SD532
2SD533 .. 2SD732
2SD732K .. 2SD931
2SD932 .. 3DD5024P
3DD5032 .. 40412V2
40413 .. 9013F
9013G .. AC180KL
AC180L .. AD462
AD463 .. AM1011-075
AM1011-300 .. BC107CSM
BC107P .. BC206C
BC207 .. BC307C
BC307VI .. BC418VI
BC419 .. BC558A
BC558AP .. BC848CW
BC848CWT1 .. BCP628C
BCP669A .. BCW66KG
BCW66KH .. BCX78-10
BCX78-7 .. BD149
BD149-10 .. BD281
BD282 .. BD515
BD515-1 .. BD814A
BD815 .. BDT60AF
BDT60B .. BDX37
BDX40 .. BF118
BF119 .. BF345
BF355 .. BF642
BF642P .. BFN23R
BFN24 .. BFR81
BFR81TO5 .. BFV10
BFV11 .. BFX79
BFX80 .. BLW46
BLW47 .. BSP52
BSP52T1 .. BSW21
BSW21A .. BT2604
BT2604T .. BTN2222AL3
BTN2222AN3 .. BU526A-7
BU526A-8 .. BUL704
BUL705 .. BUV46
BUV46A .. BUX82-5
BUX82-6 .. C9083
C9084 .. CENU52
CENU55 .. CJD340
CJD3439 .. CMPTA13
CMPTA14 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM5
D44VM6 .. DH3724CN
DH3725CD .. DTA123EE
DTA123EEA .. DTC143TEA
DTC143TKA .. DXTP03200BP5
DXTP19020DP5 .. ECG344
ECG345 .. ES3126
ESM1000 .. FA1L3N
FA1L4L .. FJPF13009
FJPF3305 .. FMMT5088
FMMT5089 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34-15
GFT34-30 .. GT2765
GT2766 .. HA7507
HA7510 .. HMBT2222A
HMBT2369 .. HUN2115
HUN2116 .. JA101P
JA101Q .. KD338
KD3442 .. KRA557F
KRA557U .. KRC416
KRC416E .. KSA1241O
KSA1241Y .. KSC2223Y
KSC2233 .. KSC945L
KSC945O .. KSP25
KSP26 .. KT3128B-1
KT3128B1 .. KT501V
KT502A .. KT808A
KT808A3 .. KT837A
KT837A1-IM .. KT997B
KT999A .. KTC3883
KTC3911 .. L8550HQLT1G
L8550HRLT1G .. MA8001
MA8002 .. MHQ2221
MHQ2222 .. MJD117L
MJD117T4 .. MJE488
MJE49 .. MM4429
MM4430 .. MMBT5127
MMBT5128 .. MMUN2214L
MMUN2215 .. MP4051
MP4052 .. MPQ5857
MPQ5858 .. MPS918R
MPS929 .. MRF449
MRF450 .. NA01EH
NA01EI .. NB011FV
NB011FY .. NB123H
NB123HH .. NB323Y
NB323Z .. NPS3707
NPS3708 .. NSS35200CF8T1G
NSS35200MR6T1G .. OC450
OC450K .. PBSS304NX
PBSS304NZ .. PEMB10
PEMB11 .. PN3906
PN3906R .. PZT5401
PZT5551 .. RN1116MFV
RN1117 .. RN2302
RN2303 .. RS7241
RS7406 .. SCE308
SCE309 .. SFT288
SFT298 .. SPS6012
SPS8050 .. ST2SB772U
ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
TEC9013H .. TIP50J3
TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
2SD1092 All Transistors Datasheet. BJT, Power MOSFET, IGBT, IC Catalog
 

2SD1092 Transistor (IC) Datasheet. Cross Reference Search. 2SD1092 Equivalent

Type Designator: 2SD1092

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 80

Maximum collector-base voltage |Ucb|, V: 55

Maximum collector-emitter voltage |Uce|, V: 55

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 4

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 500

Noise Figure, dB: -

Package of 2SD1092 transistor: TO247

2SD1092 Equivalent Transistors - Cross-Reference Search

 

2SD1092 PDF doc:

1.1. 2sd1092.pdf Size:285K _toshiba

2SD1092
2SD1092

4.1. 2sd1090.pdf Size:197K _toshiba

2SD1092
2SD1092

5.1. 2sd1069.pdf Size:133K _toshiba

2SD1092
2SD1092
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.2. 2sd1052a.pdf Size:113K _toshiba

2SD1092
2SD1092
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.3. 2sb817p_2sd1047p.pdf Size:30K _sanyo

2SD1092
2SD1092
Ordering number : ENN6572 2SB817P / 2SD1047P 2SB817P : PNP Epitaxial Planar Silicon Transistor 2SD1047P : NPN Triple Diffused Planar Silicon Transistor 2SB817P / 2SD1047P 140V / 12A, AF80W Output Applications Features Package Dimensions Capable of being mounted easily because of one- unit : mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817P / 2SD1047P] Wide ASO because of built-in ballast resistance. Goode dependence of fT on current and good HF 15.6 3.2 4.8 14.0 2.0 characteristic. 1.6 2.0 0.6 1.0 1 2 3 1 : Base 0.6 2 : Collector 3 : Emitter Specifications 5.45 5.45 SANYO : TO-3PB ( ) : 2SB817P Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (-)160 V Collector-to-Emitter Voltage VCEO (-)140 V Emitter-to-Base Voltage VEBO (-)6 V Collector Current IC (-)12 A Collector Current (Pulse) ICP (-)15 A Collector Dissipation PC Tc=25C 120 W Junction

5.4. 2sd1063.pdf Size:102K _sanyo

2SD1092
2SD1092
Ordering number:688H PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB827/2SD1063 50V/7A Switching Applicationsa Applications Package Dimensions Universal high current switching as solenoid driving, unit:mm high speed inverter and converter. 2022A [2SB827/2SD1063] Features Low collector-to-emitter saturation voltage : VCE(sat)=()0.4V max. Wide ASO. 1 : Base 2 : Collector 3 : Emitter ( ) : 2SB827 SANYO : TO-3PB Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()60 V Collector-to-Emitter Voltage VCEO ()50 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()7 A Collector Current (Pulse) ICP ()14 A Collector Dissipation PC Tc=25?C 60 W ?C Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=()40V, IE=0 ()0.1 mA Em

5.5. 2sd1012.pdf Size:57K _sanyo

2SD1092
2SD1092
Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1.3 1.3 1 : Emitter 2 : Collector ( ) : 2SB808 3 : Base 3.0 3.8 SANYO : SPA Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()20 V Collector-to-Emitter Voltage VCEO ()15 V Emitter-to-Base Voltage VEBO ()5 V Collector Current IC ()0.7 A Collector Current (Pulse) ICP ()1.5 A Collector Dissipation PC 250 mW Junction Temperature Tj 125 ?C Storage Temperature Tstg 55 to +125 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=()15V, IE=0 ()1.0 A Emitter Cutoff Current IEBO VEB=()4V, IC=0 ()1.0 A hFE1 VCE=()2V, IC=()50mA 160* 960* DC Current Gain hFE2 VCE=()2V, IC=()500mA P

5.6. 2sb815_2sd1048.pdf Size:239K _sanyo

2SD1092
2SD1092
Ordering number : ENN694F 2SB815 / 2SD1048 PNP / NPN Epitaxial Planar Silicon Transistors 2SB815 / 2SD1048 General-Purpose AF Amplifier Applications Features Package Dimensions Ultrasmall package allows miniaturization unit : mm in end products. 2018B Large current capacity (IC=0.7A) and low-saturation [2SB815 / 2SD1048] voltage. 0.4 0.16 3 0 to 0.1 1 0.95 0.95 2 1.9 1 : Base 2.9 2 : Emitter 3 : Collector Specifications SANYO : CP ( ) : 2SB815 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)20 V Collector-to-Emitter Voltage VCEO (--)15 V Emitter-to-Base Voltage VEBO (--)5 V Collector Current IC (--)0.7 A Collector Current (Pulse) ICP (--)1.5 A Collector Dissipation PC 200 mW Junction Temperature Tj 125 C Storage Temperature Tstg --55 to +125 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=(--)15V, I

5.7. 2sd1047p.pdf Size:30K _sanyo

2SD1092
2SD1092
Ordering number : ENN6572 2SB817P / 2SD1047P 2SB817P : PNP Epitaxial Planar Silicon Transistor 2SD1047P : NPN Triple Diffused Planar Silicon Transistor 2SB817P / 2SD1047P 140V / 12A, AF80W Output Applications Features Package Dimensions Capable of being mounted easily because of one- unit : mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817P / 2SD1047P] Wide ASO because of built-in ballast resistance. Goode dependence of fT on current and good HF 15.6 3.2 4.8 14.0 2.0 characteristic. 1.6 2.0 0.6 1.0 1 2 3 1 : Base 0.6 2 : Collector 3 : Emitter Specifications 5.45 5.45 SANYO : TO-3PB ( ) : 2SB817P Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (-)160 V Collector-to-Emitter Voltage VCEO (-)140 V Emitter-to-Base Voltage VEBO (-)6 V Collector Current IC (-)12 A Collector Current (Pulse) ICP (-)15 A Collector Dissipation PC Tc=25C 120 W Junction

5.8. 2sd1048.pdf Size:21K _sanyo

2SD1092
2SD1092
Ordering number : ENN694F 2SB815 / 2SD1048 PNP / NPN Epitaxial Planar Silicon Transistors 2SB815 / 2SD1048 General-Purpose AF Amplifier Applications Features Package Dimensions Ultrasmall package allows miniaturization unit : mm in end products. 2018B Large current capacity (IC=0.7A) and low-saturation [2SB815 / 2SD1048] voltage. 0.4 0.16 3 0 to 0.1 1 0.95 0.95 2 1.9 1 : Base 2.9 2 : Emitter 3 : Collector Specifications SANYO : CP ( ) : 2SB815 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)20 V Collector-to-Emitter Voltage VCEO (--)15 V Emitter-to-Base Voltage VEBO (--)5 V Collector Current IC (--)0.7 A Collector Current (Pulse) ICP (--)1.5 A Collector Dissipation PC 200 mW Junction Temperature Tj 125 C Storage Temperature Tstg --55 to +125 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=(--)15V, I

5.9. 2sd1062.pdf Size:104K _sanyo

2SD1092
2SD1092
Ordering number:723H PNP/NPN Epitaxial Planar Silicon Transistors 2SB826/2SD1062 50V/12A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit:mm other general high-current switching applications. 2010C [2SB826/2SD1062] Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.5V (PNP), 0.4V (NPN) max. Wide ASO leading to high resistance to breakdown. 1 : Base 2 : Collector 3 : Emitter ( ) : 2SB826 JEDEC : TO-220AB EIAJ : SC46 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()60 V Collector-to-Emitter Voltage VCEO ()50 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()12 A Collector Current (Pulse) ICP ()15 A Collector Dissipation PC Tc=25?C 40 W ?C Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Condi

5.10. 2sd1064.pdf Size:104K _sanyo

2SD1092
2SD1092
Ordering number:722G PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB828/2SD1064 50V/12A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit:mm other general high-current switching applications. 2022A [2SB828/2SD1064] Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.5V(PNP), 0.4V(NPN) max. Wide ASO leading to high resistance to breakdown. 1 ; Base 2 : Collector 3 : Emitter ( ) : 2SB828 Specifications SANYO : TO-3PB Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()60 V Collector-to-Emitter Voltage VCEO ()50 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()12 A Collector Current (Pulse) ICP ()17 A Collector Dissipation PC 80 W Tc=25?C Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit mi

5.11. 2sd1065.pdf Size:119K _sanyo

2SD1092
2SD1092
Ordering number:825C PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB829/2SD1065 50V/15A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit:mm other general high-current switching applications. 2022A [2SD829/2SD1065] Features Low-saturation collector-to-emitter voltage : VCE(sat) =0.5V max. Wide ASO leading to high resistance to breakdown. 1 : Base 2 : Collector 3 : Emitter ( ) : 2SB829 SANYO : TO-3PB Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()60 V Collector-to-Emitter Voltage VCEO ()50 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()15 A Collector Current (Pulse) ICP ()20 A Collector Dissipation PC Tc=25?C 90 W ?C Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Colle

5.12. 2sd1061.pdf Size:102K _sanyo

2SD1092
2SD1092
Ordering number:687G PNP/NPN Epitaxial Planar Silicon Transistors 2SB825/2SD1061 50V/7A Switching Applications Applications Package Dimensions Universal high current switching as solenoid driving, unit:mm high speed inverter and converter. 2010C [2SB825/2SD1061] Features Low saturation voltage : VCE(sat)=()0.4V max. Wide ASO JEDEC : TO-220AB 1: Base ( ) : 2SB825 EIAJ : SC-46 2 : Collector 3 : Emitter Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()60 V Collector-to-Emitter Voltage VCEO ()50 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()7 A Collector Current (Pulse) ICP ()12 A Collector Dissipation PC Tc=25?C 40 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=()40V, IE=0 ()0.1 mA Emitter Cutoff Cu

5.13. 2sd1046.pdf Size:115K _sanyo

2SD1092
2SD1092
Ordering number:677D PNP/NPN Epitaxial Planar Silicon Transistors 2SB816/2SD1046 For LF Power Amplifier, 50W Output Large Power Switching Applications Features Package Dimensions Capable of being mounted easily because of one- unit:mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB816/2SD1046] Wide ASO because of built-in ballast resistance. Goode dependence of fT on current and good HF characteristic. 1 : Base 2 : Collector 3 : Emitter ( ) : 2SB816 SANYO : TO-3PB Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()150 V Collector-to-Emitter Voltage VCEO ()120 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()8 A Collector Current (Pulse) ICP ()12 A Collector Dissipation PC Tc=25?C 80 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 40 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol C

5.14. 2sd1060.pdf Size:55K _sanyo

2SD1092
2SD1092
Ordering number : EN686J 2SB824 / 2SD1060 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB824 / 2SD1060 50V / 5A Switching Applications Applications Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching. Features Low collector-to-emitter saturation voltage : VCE(sat)= (--)0.4V max / IC= (--)3A, IB= (--)0.3A. Specifications ( ) : 2SB824 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)60 V Collector-to-Emitter Voltage VCEO (--)50 V Emitter-to-Base Voltage VEBO (--)6 V Collector Current IC (--)5 A Collector Current (Pulse) ICP (--)9 A 1.75 W Collector Dissipation PC Tc=25C30 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=(--)40V, IE=0A (--)0.1 mA Emitter Cutoff

5.15. 2sd1047.pdf Size:125K _sanyo

2SD1092
2SD1092
Ordering number:680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Features Package Dimensions Capable of being mounted easily because of one- unit:mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817/2SD1047] Wide ASO because of on-chip ballast resistance. Good depenedence of fT on current and excellent high frequency responce. The descriptions in parentheses are for the 2SB817 only : other descriptions than those in parentheses are common to the 2SB817 and 2SD1047. 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()160 V Collector-to-Emitter Voltage VCEO ()140 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()12 A Collector Current (Pulse) ICP ()15 A Tc=25?C Collector Dissipation

5.16. 2sd1005.pdf Size:211K _nec

2SD1092
2SD1092

5.17. 2sd1033.pdf Size:201K _nec

2SD1092
2SD1092

5.18. 2sd1000.pdf Size:218K _nec

2SD1092
2SD1092

5.19. 2sd1001.pdf Size:208K _nec

2SD1092
2SD1092

5.20. 2sd1006_2sd1007.pdf Size:223K _nec

2SD1092
2SD1092

5.21. 2sd1020.pdf Size:132K _nec

2SD1092
2SD1092

5.22. 2sd1055.pdf Size:124K _rohm

2SD1092
2SD1092
Transistors Medium Power Transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M FFeatures FExternal dimensions (Units: mm) 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M FStructure Epitaxial planar type NPN silicon transistor (96-217-B24) 256 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / Transistors Transistors 2SD1919 / 2SD1227M FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C) 257 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / Transistors Transistors 2SD1919 / 2SD1227M FPackaging specifications and hFE hFE values are classified as follows : FElectrical characteristic curves 258 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / Transistors Transistors 2SD1919 / 2SD1227M 259

5.23. 2sd1030.pdf Size:37K _panasonic

2SD1092
2SD1092
Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 High emitter to base voltage VEBO. 3 Low noise voltage NV. Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing and the magazine packing. 0.1 to 0.3 0.4 0.2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V 1:Base JEDEC:TO236 Collector to emitter voltage VCEO 40 V 2:Emitter EIAJ:SC59 3:Collector Mini Type Package Emitter to base voltage VEBO 15 V Peak collector current ICP 100 mA Marking symbol : 1Z Collector current IC 50 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions m

5.24. 2sd1051_e.pdf Size:44K _panasonic

2SD1092
2SD1092
Transistor 2SD1051 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm Complementary to 2SB819 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features High collector to emitter voltage VCEO. Large collector power dissipation PC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Absolute Maximum Ratings (Ta=25?C) 3 2 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V 2.5 2.5 Collector to emitter voltage VCEO 40 V Emitter to base voltage VEBO 5 V Peak collector current ICP 3 A 1:Base 2:Collector EIAJ:SC71 Collector current IC 1.5 A 3:Emitter M Type Mold Package Collector power dissipation PC* 1 W Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion Electrical Characteristics (Ta=25?C) P

5.25. 2sd1010.pdf Size:38K _panasonic

2SD1092
2SD1092
Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 0.45 0.1 0.45 0.1 Parameter Symbol Ratings Unit 1.27 1.27 Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V 1 2 3 1:Emitter Emitter to base voltage VEBO 15 V 2:Collector Peak collector current ICP 100 mA 3:Base 2.54 0.15 JEDEC:TO92 Collector current IC 50 mA EIAJ:SC43A Collector power dissipation PC 300 mW Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 20V, IE = 0 100 nA Collector cutoff current ICEO VCE = 20V, IB = 0 1 A Collector to base voltage VCBO IC = 10 A, IE = 0 50 V Collector to emit

5.26. 2sd1051.pdf Size:40K _panasonic

2SD1092
2SD1092
Transistor 2SD1051 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm Complementary to 2SB819 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features High collector to emitter voltage VCEO. Large collector power dissipation PC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Absolute Maximum Ratings (Ta=25?C) 3 2 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V 2.5 2.5 Collector to emitter voltage VCEO 40 V Emitter to base voltage VEBO 5 V Peak collector current ICP 3 A 1:Base 2:Collector EIAJ:SC71 Collector current IC 1.5 A 3:Emitter M Type Mold Package Collector power dissipation PC* 1 W Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion Electrical Characteristics (Ta=25?C) P

5.27. 2sd1009.pdf Size:34K _panasonic

2SD1092
2SD1092

5.28. 2sd1030_e.pdf Size:37K _panasonic

2SD1092
2SD1092
Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 High emitter to base voltage VEBO. 3 Low noise voltage NV. Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing and the magazine packing. 0.1 to 0.3 0.4 0.2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V 1:Base JEDEC:TO236 Collector to emitter voltage VCEO 40 V 2:Emitter EIAJ:SC59 3:Collector Mini Type Package Emitter to base voltage VEBO 15 V Peak collector current ICP 100 mA Marking symbol : 1Z Collector current IC 50 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions m

5.29. 2sd1011.pdf Size:42K _panasonic

2SD1092
2SD1092
Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 100 V 1.27 1.27 Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 15 V 1 2 3 1:Emitter Peak collector current ICP 50 mA 2:Collector Collector current IC 20 mA 3:Base 2.54 0.15 JEDEC:TO92 Collector power dissipation PC 300 mW EIAJ:SC43A Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 60V, IE = 0 100 nA Collector cutoff current ICEO VCE = 60V, IB = 0 1 A Collector to base voltage VCBO IC = 10 A, IE = 0 100 V Collector to emitter voltage VCEO IC =

5.30. 2sd1011_e.pdf Size:42K _panasonic

2SD1092
2SD1092
Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 100 V 1.27 1.27 Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 15 V 1 2 3 1:Emitter Peak collector current ICP 50 mA 2:Collector Collector current IC 20 mA 3:Base 2.54 0.15 JEDEC:TO92 Collector power dissipation PC 300 mW EIAJ:SC43A Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 60V, IE = 0 100 nA Collector cutoff current ICEO VCE = 60V, IB = 0 1 A Collector to base voltage VCBO IC = 10 A, IE = 0 100 V Collector to emitter voltage VCEO IC =

5.31. 2sd1010_e.pdf Size:42K _panasonic

2SD1092
2SD1092
Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 0.45 0.1 0.45 0.1 Parameter Symbol Ratings Unit 1.27 1.27 Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V 1 2 3 1:Emitter Emitter to base voltage VEBO 15 V 2:Collector Peak collector current ICP 100 mA 3:Base 2.54 0.15 JEDEC:TO92 Collector current IC 50 mA EIAJ:SC43A Collector power dissipation PC 300 mW Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 20V, IE = 0 100 nA Collector cutoff current ICEO VCE = 20V, IB = 0 1 A Collector to base voltage VCBO IC = 10 A, IE = 0 50 V Collector to emit

5.32. 2sd1060.pdf Size:265K _utc

2SD1092
2SD1092
UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR ? FEATURES * Low collector-to-emitter saturation voltage: VCE(SAT)=0.4V max/IC=3A, IB=0.3A ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD1060L-x-AB3-R 2SD1060G-x-AB3-R SOT-89 B C E Tape Reel 2SD1060L-x-T60-K 2SD1060G-x-T60-K TO-126 B C E Bulk 2SD1060L-x-T92-B 2SD1060G-x-T92-B TO-92 E C B Tape Box 2SD1060L-x-T92-K 2SD1060G-x-T92-K TO-92 E C B Bulk 2SD1060L-x-T92-R 2SD1060G-x-T92-R TO-92 E C B Tape Reel 2SD1060L-x-TA3-T 2SD1060G-x-TA3-T TO-220 B C E Tube 2SD1060L-x-TF3-T 2SD1060G-x-TF3-T TO-220F B C E Tube 2SD1060L-x-TM3-T 2SD1060G-x-TM3-T TO-251 B C E Tube 2SD1060L-x-TN3-T 2SD1060G-x-TN3-T TO-252 B C E Tube 2SD1060L-x-TN3-R 2SD1060G-x-TN3-R TO-252 B C E Tape Reel www.unisonic.com.tw 1 of 5 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R208-023.E 2SD1060 NPN SILICON TRANSISTOR ? ABSOLUTE MAXIMUM R

5.33. 2sd1072.pdf Size:135K _fuji

2SD1092
2SD1092

5.34. 2sd1073.pdf Size:97K _fuji

2SD1092
2SD1092
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

5.35. 2sd1071.pdf Size:102K _fuji

2SD1092
2SD1092
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

5.36. 2sd1049.pdf Size:102K _fuji

2SD1092
2SD1092
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

5.37. 2sd1088.pdf Size:111K _mospec

2SD1092
2SD1092
A A A

5.38. 2sd1083.pdf Size:56K _no

2SD1092
2SD1092

5.39. 2sd1015.pdf Size:39K _sony

2SD1092
2SD1092

5.40. 2sd1068.pdf Size:158K _sony

2SD1092
2SD1092

5.41. 2sd1005.pdf Size:72K _secos

2SD1092
2SD1092
2SD1005 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES Small Flat Package 4 High Breakdown Voltage Excellent DC Current Gain Linearity 1 2 3 B C A E E C CLASSIFICATION OF hFE(1) Product-Rank 2SD1005-W 2SD1005-V 2SD1005-U B D Range 90~180 135~270 200~400 F G Marking BW BV BU H K J L Collector 2 PACKAGE INFORMATION Millimeter Millimeter REF. REF. Min. Max. Min. Max. 1 A 4.40 4.60 G 0.40 0.58 Package MPQ Leader Size B 3.94 4.25 H 1.50 TYP Base C 1.40 1.60 J 3.00 TYP SOT-89 1K 7 inch D 2.25 2.60 K 0.32 0.52 3 E 1.50 1.85 L 0.35 0.44 Emitter F 0.89 1.20 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage V 80 V CEO Emitter-Base Voltage VEBO 5 V Collector Current-Continuous I 1 A C C

5.42. 2sd1023.pdf Size:81K _jmnic

2SD1092
2SD1092
Product Specification www.jmnic.com Silicon Power Transistors 2SD1023 DESCRIPTION ·DARLINGTON ·High DC current gain ·With TO-220 package PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 7 V IC Collector current-Continuous 5 A ICM Collector current-Peak 8 A IB Base current 0.5 A IBM Base current-Peak 1 A PT Total power dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification www.jmnic.com Silicon Power Transistors 2SD1023 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=3A; IB=5mA 1.5 V VBEsat Emit

5.43. 2sd1062.pdf Size:55K _jmnic

2SD1092
2SD1092
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1062 DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Complement to type 2SB826 ·Wide area of safe operation APPLICATIONS ·Relay drivers, ·High-speed inverters, ·Converters ·General high-current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 12 A ICM Collector current-peak 15 A PC Collector power dissipation TC=25? 40 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1062 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN

5.44. 2sd1049.pdf Size:115K _jmnic

2SD1092
2SD1092
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1049 · DESCRIPTION ·With TO-3PN package ·High current, ·High speed switching ·High reliability APPLICATIONS ·Switching regulators ·Motor controls ·High frequency inverters ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 25 A IB Base current 5 A PC Collector power dissipation TC=25? 80 W Tj Junction temperature 150 ? Tstg Storage temperature -40~150 ? JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1049 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDIT

5.45. 2sd1025.pdf Size:80K _jmnic

2SD1092
2SD1092
Product Specification www.jmnic.com Silicon Power Transistors 2SD1025 DESCRIPTION ·DARLINGTON ·With TO-220 package PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 8 A ICM Collector current-Peak 12 A IB Base current 0.5 A IBM Base current-Peak 1.0 A PT Total power dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Thermal resistance junction to case 2.5 ?/W R?JC JMnic Product Specification www.jmnic.com Silicon Power Transistors 2SD1025 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V

5.46. 2sd1060.pdf Size:128K _jmnic

2SD1092
2SD1092
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1060 DESCRIPTION ·With TO-220 package ·Low collector-emitter saturation voltage ·Complement to type 2SB824 APPLICATIONS ·Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 5 A ICP Collector current (Pulse) 9 A PC Collector power dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1060 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX

5.47. 2sd1026.pdf Size:31K _jmnic

2SD1092
2SD1092
Product Specification www.jmnic.com 2SD1026 Silicon NPN Transistors Features B C E ?With TO-247 package ?Darlington transistor Absolute Maximum Ratings Tc=25? SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 100 V VCEO Collector to emitter voltage 100 V VEBO Emitter to base voltage 7 V IB Base current 1 A IC Collector current 15 A PC Collector power dissipation 100 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? TO-247 Electrical Characteristics Tc=25? SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT ICBO Collector cut-off current VCB=100V; IE=0 0.1 mA ICEO Collector breakdown voltage VCE=100V; IB=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 5 mA VCBO Collector-base breakdown voltage VCEO Collector-emitter breakdown voltage IC=30mA; IB=0 100 V VEBO Emitter-base breakdown voltage VCE(sat-1) Collector-emitter saturation voltages IC=10A; IB=20mA 1.5 V VCE(sat-2) Collector-emitter saturation voltages hFE-1 Forw

5.48. 2sd1024.pdf Size:301K _shindengen

2SD1092
2SD1092
SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1024 Case : TO-220 (T8L10) 8A NPN RATINGS Unit : mm

5.49. 2sd1044.pdf Size:257K _inchange_semiconductor

2SD1092
2SD1092
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1044 DESCRIPTION ·High DC Current Gain : hFE= 700(Min.)@ IC= 1A, VCE= 4V ·High Collector-Emitter Breakdown Voltage- : V(BR) CEO= 80V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCER Collector-Emitter Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A IBB Base Current- Continuous 3 A Collector Power Dissipation PC @TC=25? 60 W Tj Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1044 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS

5.50. 2sd1037.pdf Size:128K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1037 DESCRIPTION Ў¤ With MT-200 package Ў¤ Excellent safe operating area Ў¤ High current capability APPLICATIONS Ў¤ For electrical supply ,DC-DC converters and low frequency power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION Ў¤ Absolute maximum ratings (Ta=25°C) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 150 Collector-base voltage Open emitter Collector-emitter voltage Open base 120 6 30 TC=25Ўж 180 150 -55~150 Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Open collector Emitter Fig.1 simplified outline (MT-200) and symbol UNIT V V V A W Ўж Ўж

5.51. 2sd1063.pdf Size:198K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors · 2SD1063 DESCRIPTION Ў¤ With TO-3PN package Ў¤ Wide area of safe operation Ў¤ Low collector saturation voltage Ў¤ Complement to type 2SB827 APPLICATIONS Ў¤ Universal high current switching as solenoid driving,high speed inverter and converter. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 60 Collector-base voltage Open emitter Collector-emitter voltage Open base 50 6 Emitter-base voltage Open collector Collector current (DC) Collector current -peak Collector power dissipation Junction temperature Storage temperature TC=25Ўж 7 14 60 150 -55~150 UNIT V V V A A W Ўж Ўж

5.52. 2sd1073.pdf Size:69K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1073 DESCRIPTION ·With TO-220 package ·High DC current gain ·DARLINGTON ·Low saturation voltage APPLICATIONS ·Audio power amplifiers ·Relay and solenoid drivers ·Motor controls ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 250 V VEBO Emitter-base voltage Open collector 30 V IC Collector current-continuous 4 A IB Base current 0.3 A PC Collector power dissipation TC=25? 60 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? THERMAL CHARACTERISTICS SYMBOL CHARACTERISTICS MAX UNIT R?jc Thermal resistance junction to case 2.0 ?/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2S

5.53. 2sd1023.pdf Size:119K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1023 DESCRIPTION Ў¤ With TO-220 package Ў¤ High DC current gain Ў¤ DARLINGTON PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage CONDITIONS Open emitter NDU ICO E SEM ANG INCH Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current-Continuous Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25Ўж TOR 200 200 7 5 8 0.5 1 30 150 -55~150 VALUE UNIT V V V A A A A W Ўж Ўж THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.17 UNIT Ўж /W

5.54. 2sd1069.pdf Size:131K _inchange_semiconductor

2SD1092
2SD1092
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1069 DESCRIPTION ·High Collector Current Capability ·High Collector Power Dissipation Capability ·Built-in Damper Diode APPLICATIONS ·TV horizontal deflection output applications. ·High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A IBB Base Current-Continuous 2 A Collector Power Dissipation 1.75 Ta=25? PC W Collector Power Dissipation 40 TC=25? Tj Junction Temperature 150 ? Storage Ttemperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1069 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TY

5.55. 2sd1088.pdf Size:141K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1088 DESCRIPTION ·With TO-220 package ·High DC current gain ·DARLINGTON APPLICATIONS ·For switching igniter applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 250 V VEBO Emitter-base voltage Open collector 5 V IC Collector current-continuous 6 A ICM Collector current-peak 10 A IB Base current 1 A PD Total power dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1088 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sus

5.56. 2sd1024.pdf Size:119K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1024 DESCRIPTION Ў¤ With TO-220 package Ў¤ High DC current gain Ў¤ DARLINGTON PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg TOR NDU ICO E SEM ANG INCH Collector-base voltage Open emitter 100 Collector-emitter voltage Open base 100 7 Emitter-base voltage Open collector Collector current-Continuous Collector current-Peak 8 12 Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25Ўж 0.5 1 50 150 -55~150 PARAMETER CONDITIONS VALUE UNIT V V V A A A A W Ўж Ўж THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 2.5 UNIT Ўж /W

5.57. 2sd1022.pdf Size:267K _inchange_semiconductor

2SD1092
2SD1092
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1022 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 3A ·Low Saturation Voltage APPLICATIONS ·Designed for general purpoe amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICP Collector Current-Peak 8 A IBB Base Current-Continuous 0.5 A IBM Base Current-Peak 1 A Collector Power Dissipation PC @ TC=25? 30 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 4.17 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington

5.58. 2sd1032.pdf Size:134K _inchange_semiconductor

2SD1092
2SD1092
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1032 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Large Collector Power Dissipation ·Complement to Type 2SB812 APPLICATIONS ·Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A Collector Power Dissipation PC @ TC=25? 60 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1032 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 60 V Collector-Emitter Saturat

5.59. 2sd1062.pdf Size:167K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220 package Ў¤ Low collector saturation voltage Ў¤ Complement to type 2SB826 Ў¤ Wide area of safe operation APPLICATIONS Ў¤ Relay drivers, Ў¤ High-speed inverters, Ў¤ Converters Ў¤ General high-current switching applications PINNING PIN 1 2 3 Base DESCRIPTION 2SD1062 Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH Emitter CONDITIONS VALUE 60 Collector-base voltage Open emitter Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25Ўж Open base Open collector 50 6 12 15 40 150 -55~150 Collector;connected to mounting base UNIT V V V A A W Ўж Ўж

5.60. 2sd1049.pdf Size:154K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors · 2SD1049 DESCRIPTION Ў¤ With TO-3PN package Ў¤ High current, Ў¤ High speed switching Ў¤ High reliability APPLICATIONS Ў¤ Switching regulators Ў¤ Motor controls Ў¤ High frequency inverters Ў¤ General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25Ўж ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 120 80 7 25 5 TC=25Ўж 80 150 -55~150 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Open collector Fig.1 simplified outline (TO-3PN) and symbol UNIT V V V A A W Ўж Ўж THERMAL CHARACTERISTICS SYMBOL R¦И jc CHARACTERISTICS Thermal resistance junction to case MAX 1.55 UNIT Ўж /W

5.61. 2sd1025.pdf Size:119K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1025 DESCRIPTION Ў¤ With TO-220 package Ў¤ High DC current gain Ў¤ DARLINGTON PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg TOR NDU ICO E SEM ANG INCH PARAMETER CONDITIONS VALUE 200 Collector-base voltage Open emitter Collector-emitter voltage Open base 200 7 Emitter-base voltage Open collector Collector current 8 Collector current-Peak 12 Base current 0.5 Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25Ўж 1.0 50 150 -55~150 UNIT V V V A A A A W Ўж Ўж THERMAL CHARACTERISTICS SYMBOL R¦Ё j-C PARAMETER Thermal resistance junction to case VALUE 2.5 UNIT Ўж /W

5.62. 2sd1064.pdf Size:250K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1064 DESCRIPTION ·With TO-3PN package ·Complement to type 2SB828 ·Wide area of safe operation ·Low collector saturation voltage APPLICATIONS ·Relay drivers, ·High-speed inverters, ·Converters, ·General high-current switching applications . PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 12 A ICM Collector current -peak 17 A PC Collector power dissipation TC=25? 80 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1064 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMET

5.63. 2sd1065.pdf Size:257K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1065 DESCRIPTION ·With TO-3PN package ·Complement to type 2SB829 ·Wide area of safe operation ·Low collector saturation voltage APPLICATIONS ·Relay drivers, ·High-speed inverters, ·Converters, ·General high-current switching applications . PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 15 A ICM Collector current -peak 20 A PC Collector power dissipation TC=25? 90 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1065 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMET

5.64. 2sd1061.pdf Size:164K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220 package Ў¤ Low collector saturation voltage Ў¤ Wide ASO(safe operating area) Ў¤ Complement to type 2SB825 APPLICATIONS Ў¤ Universal high current switching as solenoid driving, Ў¤ High speed inverter and converter. relay drivers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SD1061 Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 60 Collector-base voltage Open emitter Collector-emitter voltage Open base 50 6 7 12 TC=25Ўж 40 150 -55~150 Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature Open collector UNIT V V V A A W Ўж Ўж

5.65. 2sd103.pdf Size:318K _inchange_semiconductor

2SD1092
2SD1092
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD103 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High Power Dissipation- : PC= 25W(Max)@TC=25? Complement to Type 2SB503 APPLICATIONS ·Designed for audio power amplifier, power switching, DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 3 A IE Emitter Current-Continuous -3 A IBB Base Current-Continuous 1 A Collector Power Dissipation PC @TC=25? 25 W TJ Junction Temperature 150 ? Storage Temperature -65~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD103 ELECTRICAL CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS M

5.66. 2sd1027.pdf Size:134K _inchange_semiconductor

2SD1092
2SD1092
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1027 DESCRIPTION ·High DC Current Gain : hFE= 1500(Min.)@ IC= 10A, VCE= 3V ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) APPLICATIONS ·Designed for general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 22 A IBB Base Current- Continuous 1 A IBM Base Current- Peak 2 A Collector Power Dissipation PC @TC=25? 100 W Tj Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 1.25 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD10

5.67. 2sd1046.pdf Size:202K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors · DESCRIPTION Ў¤ With TO-3PN package Ў¤ Complement to type 2SB816 Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For LF power amplifier, 50W output large power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SD1046 Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 150 Collector-base voltage Open emitter Collector-emitter voltage Open base 120 6 Emitter-base voltage Open collector Collector current Collector current -peak Collector power dissipation Junction temperature Storage temperature TC=25Ўж 8 12 80 150 -40~150 UNIT V V V A A W Ўж Ўж

5.68. 2sd1060.pdf Size:158K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1060 DESCRIPTION Ў¤ With TO-220 package Ў¤ Low collector saturation voltage Ў¤ Complement to type 2SB824 APPLICATIONS Ў¤ Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 60 Collector-base voltage Open emitter Collector-emitter voltage Open base 50 6 5 9 TC=25Ўж 30 150 -55~150 Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature Open collector Emitter UNIT V V V A A W Ўж Ўж

5.69. 2sd1047.pdf Size:174K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1047 DESCRIPTION Ў¤ Complement to type 2SB817 Ў¤ With TO-3PN package APPLICATIONS Ў¤ Power amplification Ў¤ Low frequency and audio band PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 160 Collector-base voltage Open emitter Collector-emitter voltage Open base 140 6 Emitter-base voltage Open collector Collector current (DC) 12 Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25Ўж 15 100 150 -40~150 UNIT V V V A A W Ўж Ўж

5.70. 2sd1026.pdf Size:100K _inchange_semiconductor

2SD1092
2SD1092
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1026 DESCRIPTION ·High DC Current Gain : hFE= 1500(Min.)@ IC= 10A, VCE= 3V ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) APPLICATIONS ·Designed for general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 22 A IBB Base Current- Continuous 1 A IBM Base Current- Peak 2 A Collector Power Dissipation PC @TC=25? 100 W Tj Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 1.25 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD10

5.71. 2sd1005.pdf Size:337K _htsemi

2SD1092
2SD1092
2SD1005 TRANSISTOR (NPN) SOT-89-3L FEATURES Small Flat Package 1. BASE High Breakdown Voltage Excellent DC Current Gain Linearity 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1 A PC Collector Power Dissipation 500 mW R?JA Thermal Resistance From Junction To Ambient 250 ?/W Tj Junction Temperature 150 ? Tstg Storage Temperature -55~+150 ? ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=0.1mA,IE=0 100 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 80 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 5 V Collector cut-off current ICBO VCB=100V,IE=0 0.1 µA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 µA hFE(1)* VCE=2V, IC=100mA 90 400 DC

See also transistors datasheet: 2SD1084 , 2SD1085 , 2SD1085K , 2SD1087 , 2SD1088 , 2SD1089 , 2SD1090 , 2SD1091 , TIP3055 , 2SD1093 , 2SD1094 , 2SD1095 , 2SD1096 , 2SD1097 , 2SD1098 , 2SD1099 , 2SD11 .

Keywords

 2SD1092 Datasheet  2SD1092 Design 2SD1092 MOSFET 2SD1092 Power
 2SD1092 RoHS Compliant 2SD1092 Service 2SD1092 Triacs 2SD1092 Semiconductor
 2SD1092 Database 2SD1092 Innovation 2SD1092 IC 2SD1092 Electricity

 

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