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2SD1092 Transistor (IC) Datasheet. Cross Reference Search. 2SD1092 Equivalent

Type Designator: 2SD1092

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 80

Maximum collector-base voltage |Ucb|, V: 55

Maximum collector-emitter voltage |Uce|, V: 55

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 4

Maksimalna temperatura (Tj), ¬įC: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 500

Noise Figure, dB: -

Package of 2SD1092 transistor: TO247

2SD1092 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1092 PDF:

1.1. 2sd1092.pdf Size:285K _toshiba

2SD1092
2SD1092

4.1. 2sd1090.pdf Size:197K _toshiba

2SD1092
2SD1092

5.1. 2sd1069.pdf Size:133K _toshiba

2SD1092
2SD1092

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.2. 2sd1052a.pdf Size:113K _toshiba

2SD1092
2SD1092

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.3. 2sb817p_2sd1047p.pdf Size:30K _sanyo

2SD1092
2SD1092

Ordering number : ENN6572 2SB817P / 2SD1047P 2SB817P : PNP Epitaxial Planar Silicon Transistor 2SD1047P : NPN Triple Diffused Planar Silicon Transistor 2SB817P / 2SD1047P 140V / 12A, AF80W Output Applications Features Package Dimensions ē Capable of being mounted easily because of one- unit : mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817P / 2S

5.4. 2sd1063.pdf Size:102K _sanyo

2SD1092
2SD1092

Ordering number:688H PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB827/2SD1063 50V/7A Switching Applicationsa Applications Package Dimensions ∑ Universal high current switching as solenoid driving, unit:mm high speed inverter and converter. 2022A [2SB827/2SD1063] Features ∑ Low collector-to-emitter saturation voltage : VCE(sat)=(Ė)0.4V max. ∑ Wide ASO. 1 : Base 2 : Collector

5.5. 2sd1012.pdf Size:57K _sanyo

2SD1092
2SD1092

Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1.3 1.3 1 : Emitter 2 : Collector ( ) : 2SB808 3 : Base 3.0 3.8 SANYO : SPA Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratin

5.6. 2sb815_2sd1048.pdf Size:239K _sanyo

2SD1092
2SD1092

Ordering number : ENN694F 2SB815 / 2SD1048 PNP / NPN Epitaxial Planar Silicon Transistors 2SB815 / 2SD1048 General-Purpose AF Amplifier Applications Features Package Dimensions ē Ultrasmall package allows miniaturization unit : mm in end products. 2018B ē Large current capacity (IC=0.7A) and low-saturation [2SB815 / 2SD1048] voltage. 0.4 0.16 3 0 to 0.1 1 0.95 0.95 2 1.9 1 : Ba

5.7. 2sd1047p.pdf Size:30K _sanyo

2SD1092
2SD1092

Ordering number : ENN6572 2SB817P / 2SD1047P 2SB817P : PNP Epitaxial Planar Silicon Transistor 2SD1047P : NPN Triple Diffused Planar Silicon Transistor 2SB817P / 2SD1047P 140V / 12A, AF80W Output Applications Features Package Dimensions ē Capable of being mounted easily because of one- unit : mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817P / 2S

5.8. 2sd1048.pdf Size:21K _sanyo

2SD1092
2SD1092

Ordering number : ENN694F 2SB815 / 2SD1048 PNP / NPN Epitaxial Planar Silicon Transistors 2SB815 / 2SD1048 General-Purpose AF Amplifier Applications Features Package Dimensions ē Ultrasmall package allows miniaturization unit : mm in end products. 2018B ē Large current capacity (IC=0.7A) and low-saturation [2SB815 / 2SD1048] voltage. 0.4 0.16 3 0 to 0.1 1 0.95 0.95 2 1.9 1 : Ba

5.9. 2sd1062.pdf Size:104K _sanyo

2SD1092
2SD1092

Ordering number:723H PNP/NPN Epitaxial Planar Silicon Transistors 2SB826/2SD1062 50V/12A Switching Applications Applications Package Dimensions ∑ Relay drivers, high-speed inverters, converters, and unit:mm other general high-current switching applications. 2010C [2SB826/2SD1062] Features ∑ Low-saturation collector-to-emitter voltage : VCE(sat)=Ė0.5V (PNP), 0.4V (NPN) max. ∑ Wide A

5.10. 2sd1064.pdf Size:104K _sanyo

2SD1092
2SD1092

Ordering number:722G PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB828/2SD1064 50V/12A Switching Applications Applications Package Dimensions ∑ Relay drivers, high-speed inverters, converters, and unit:mm other general high-current switching applications. 2022A [2SB828/2SD1064] Features ∑ Low-saturation collector-to-emitter voltage : VCE(sat)=Ė0.5V(PNP), 0.4V(NPN) max. ∑ Wide A

5.11. 2sd1065.pdf Size:119K _sanyo

2SD1092
2SD1092

Ordering number:825C PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB829/2SD1065 50V/15A Switching Applications Applications Package Dimensions ∑ Relay drivers, high-speed inverters, converters, and unit:mm other general high-current switching applications. 2022A [2SD829/2SD1065] Features ∑ Low-saturation collector-to-emitter voltage : VCE(sat) =Ė0.5V max. ∑ Wide ASO leading to h

5.12. 2sd1061.pdf Size:102K _sanyo

2SD1092
2SD1092

Ordering number:687G PNP/NPN Epitaxial Planar Silicon Transistors 2SB825/2SD1061 50V/7A Switching Applications Applications Package Dimensions ∑ Universal high current switching as solenoid driving, unit:mm high speed inverter and converter. 2010C [2SB825/2SD1061] Features ∑ Low saturation voltage : VCE(sat)=(Ė)0.4V max. ∑ Wide ASO JEDEC : TO-220AB 1: Base ( ) : 2SB825 EIAJ : SC-

5.13. 2sd1046.pdf Size:115K _sanyo

2SD1092
2SD1092

Ordering number:677D PNP/NPN Epitaxial Planar Silicon Transistors 2SB816/2SD1046 For LF Power Amplifier, 50W Output Large Power Switching Applications Features Package Dimensions ∑ Capable of being mounted easily because of one- unit:mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB816/2SD1046] ∑ Wide ASO because of built-in ballast resistance. ∑

5.14. 2sd1060.pdf Size:55K _sanyo

2SD1092
2SD1092

Ordering number : EN686J 2SB824 / 2SD1060 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB824 / 2SD1060 50V / 5A Switching Applications Applications ē Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching. Features ē Low collector-to-emitter saturation voltage : VCE(sat)= (--)0.4V max / IC= (--)3A, IB= (-

5.15. 2sd1047.pdf Size:125K _sanyo

2SD1092
2SD1092

Ordering number:680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Features Package Dimensions ∑ Capable of being mounted easily because of one- unit:mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817/2SD1047] ∑ Wide ASO because of on-chip ballast resista

5.16. 2sd1005.pdf Size:211K _nec

2SD1092
2SD1092

5.17. 2sd1033.pdf Size:201K _nec

2SD1092
2SD1092

5.18. 2sd1000.pdf Size:218K _nec

2SD1092
2SD1092

5.19. 2sd1001.pdf Size:208K _nec

2SD1092
2SD1092

5.20. 2sd1006_2sd1007.pdf Size:223K _nec

2SD1092
2SD1092

5.21. 2sd1020.pdf Size:132K _nec

2SD1092
2SD1092

5.22. 2sd1055.pdf Size:124K _rohm

2SD1092
2SD1092

Transistors Medium Power Transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M FFeatures FExternal dimensions (Units: mm) 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M FStructure Epitaxial planar type NPN silicon transistor (96-217-B24) 256 2SD1766 / 2SD

5.23. 2sd1030.pdf Size:37K _panasonic

2SD1092
2SD1092

Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 Ė0.3 +0.25 0.65Ī 0.15 1.5 Ė0.05 0.65Ī 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 High emitter to base voltage VEBO. 3 Low noise voltage NV. Mini type package, allowing downsizing of the equipment and 2 automatic

5.24. 2sd1051_e.pdf Size:44K _panasonic

2SD1092
2SD1092

Transistor 2SD1051 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm Complementary to 2SB819 6.9Ī 0.1 2.5Ī 0.1 1.5 1.5 R0.9 1.0 R0.9 Features High collector to emitter voltage VCEO. Large collector power dissipation PC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55Ī 0.

5.25. 2sd1010.pdf Size:38K _panasonic

2SD1092
2SD1092

Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0Ī 0.2 4.0Ī 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 0.45 Ė0.1 0.45 Ė0.1 Parameter Symbol Ratings Unit 1.27 1.27 Collect

5.26. 2sd1051.pdf Size:40K _panasonic

2SD1092
2SD1092

Transistor 2SD1051 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm Complementary to 2SB819 6.9Ī 0.1 2.5Ī 0.1 1.5 1.5 R0.9 1.0 R0.9 Features High collector to emitter voltage VCEO. Large collector power dissipation PC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55Ī 0.

5.27. 2sd1009.pdf Size:34K _panasonic

2SD1092
2SD1092

5.28. 2sd1030_e.pdf Size:37K _panasonic

2SD1092
2SD1092

Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 Ė0.3 +0.25 0.65Ī 0.15 1.5 Ė0.05 0.65Ī 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 High emitter to base voltage VEBO. 3 Low noise voltage NV. Mini type package, allowing downsizing of the equipment and 2 automatic

5.29. 2sd1011.pdf Size:42K _panasonic

2SD1092
2SD1092

Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0Ī 0.2 4.0Ī 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 Ė0.1 0.45 Ė0.1 Collector to base voltage VCBO 100 V 1.27

5.30. 2sd1011_e.pdf Size:42K _panasonic

2SD1092
2SD1092

Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0Ī 0.2 4.0Ī 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 Ė0.1 0.45 Ė0.1 Collector to base voltage VCBO 100 V 1.27

5.31. 2sd1010_e.pdf Size:42K _panasonic

2SD1092
2SD1092

Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0Ī 0.2 4.0Ī 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 0.45 Ė0.1 0.45 Ė0.1 Parameter Symbol Ratings Unit 1.27 1.27 Collect

5.32. 2sd1060.pdf Size:265K _utc

2SD1092
2SD1092

UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR ? FEATURES * Low collector-to-emitter saturation voltage: VCE(SAT)=0.4V max/IC=3A, IB=0.3A ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD1060L-x-AB3-R 2SD1060G-x-AB3-R SOT-89 B C E Tape Reel 2SD1060L-x-T60-K 2SD1060G-x-T60-K TO-

5.33. 2sd1072.pdf Size:135K _fuji

2SD1092
2SD1092

5.34. 2sd1073.pdf Size:97K _fuji

2SD1092
2SD1092

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

5.35. 2sd1071.pdf Size:102K _fuji

2SD1092
2SD1092

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

5.36. 2sd1049.pdf Size:102K _fuji

2SD1092
2SD1092

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

5.37. 2sd1088.pdf Size:111K _mospec

2SD1092
2SD1092

A A A

5.38. 2sd1083.pdf Size:56K _no

2SD1092
2SD1092

5.39. 2sd1015.pdf Size:39K _sony

2SD1092
2SD1092

5.40. 2sd1068.pdf Size:158K _sony

2SD1092
2SD1092

5.41. 2sd1005.pdf Size:72K _secos

2SD1092
2SD1092

2SD1005 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of ‚Äú-C‚ÄĚ specifies halogen & lead-free SOT-89 FEATURES Small Flat Package 4 High Breakdown Voltage Excellent DC Current Gain Linearity 1 2 3 B C A E E C CLASSIFICATION OF hFE(1) Product-Rank 2SD1005-W 2SD1005-V 2SD1005-U B D Range 90~180 135~

5.42. 2sd1023.pdf Size:81K _jmnic

2SD1092
2SD1092

Product Specification www.jmnic.com Silicon Power Transistors 2SD1023 DESCRIPTION ·DARLINGTON ·High DC current gain ·With TO-220 package PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open e

5.43. 2sd1062.pdf Size:55K _jmnic

2SD1092
2SD1092

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1062 DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Complement to type 2SB826 ·Wide area of safe operation APPLICATIONS ·Relay drivers, ·High-speed inverters, ·Converters ·General high-current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to

5.44. 2sd1049.pdf Size:115K _jmnic

2SD1092
2SD1092

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1049 · DESCRIPTION ·With TO-3PN package ·High current, ·High speed switching ·High reliability APPLICATIONS ·Switching regulators ·Motor controls ·High frequency inverters ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitte

5.45. 2sd1025.pdf Size:80K _jmnic

2SD1092
2SD1092

Product Specification www.jmnic.com Silicon Power Transistors 2SD1025 DESCRIPTION ·DARLINGTON ·With TO-220 package PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Colle

5.46. 2sd1060.pdf Size:128K _jmnic

2SD1092
2SD1092

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1060 DESCRIPTION ·With TO-220 package ·Low collector-emitter saturation voltage ·Complement to type 2SB824 APPLICATIONS ·Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 moun

5.47. 2sd1026.pdf Size:31K _jmnic

2SD1092
2SD1092

Product Specification www.jmnic.com 2SD1026 Silicon NPN Transistors Features B C E ?With TO-247 package ?Darlington transistor Absolute Maximum Ratings Tc=25? SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 100 V VCEO Collector to emitter voltage 100 V VEBO Emitter to base voltage 7 V IB Base current 1 A IC Collector current 15 A PC Collector power dissipation

5.48. 2sd1024.pdf Size:301K _shindengen

2SD1092
2SD1092

SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1024 Case : TO-220 (T8L10) 8A NPN RATINGS Unit : mm

5.49. 2sd1044.pdf Size:257K _inchange_semiconductor

2SD1092
2SD1092

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1044 DESCRIPTION ·High DC Current Gain : hFE= 700(Min.)@ IC= 1A, VCE= 4V ·High Collector-Emitter Breakdown Voltage- : V(BR) CEO= 80V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMET

5.50. 2sd1037.pdf Size:128K _inchange_semiconductor

2SD1092
2SD1092

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1037 DESCRIPTION Ў¤ With MT-200 package Ў¤ Excellent safe operating area Ў¤ High current capability APPLICATIONS Ў¤ For electrical supply ,DC-DC converters and low frequency power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION Ў¤ Abso

5.51. 2sd1063.pdf Size:198K _inchange_semiconductor

2SD1092
2SD1092

Inchange Semiconductor Product Specification Silicon NPN Power Transistors · 2SD1063 DESCRIPTION Ў¤ With TO-3PN package Ў¤ Wide area of safe operation Ў¤ Low collector saturation voltage Ў¤ Complement to type 2SB827 APPLICATIONS Ў¤ Universal high current switching as solenoid driving,high speed inverter and converter. PINNING PIN 1 2 3 Base Collector;connected to mounting

5.52. 2sd1073.pdf Size:69K _inchange_semiconductor

2SD1092
2SD1092

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1073 DESCRIPTION ·With TO-220 package ·High DC current gain ·DARLINGTON ·Low saturation voltage APPLICATIONS ·Audio power amplifiers ·Relay and solenoid drivers ·Motor controls ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base

5.53. 2sd1023.pdf Size:119K _inchange_semiconductor

2SD1092
2SD1092

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1023 DESCRIPTION Ў¤ With TO-220 package Ў¤ High DC current gain Ў¤ DARLINGTON PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage CONDITIONS Open emitt

5.54. 2sd1069.pdf Size:131K _inchange_semiconductor

2SD1092
2SD1092

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1069 DESCRIPTION ·High Collector Current Capability ·High Collector Power Dissipation Capability ·Built-in Damper Diode APPLICATIONS ·TV horizontal deflection output applications. ·High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Colle

5.55. 2sd1088.pdf Size:141K _inchange_semiconductor

2SD1092
2SD1092

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1088 DESCRIPTION ·With TO-220 package ·High DC current gain ·DARLINGTON APPLICATIONS ·For switching igniter applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL

5.56. 2sd1024.pdf Size:119K _inchange_semiconductor

2SD1092
2SD1092

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1024 DESCRIPTION Ў¤ With TO-220 package Ў¤ High DC current gain Ў¤ DARLINGTON PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg TOR NDU ICO E SEM ANG INCH Collector-base volta

5.57. 2sd1022.pdf Size:267K _inchange_semiconductor

2SD1092
2SD1092

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1022 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 3A ·Low Saturation Voltage APPLICATIONS ·Designed for general purpoe amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT

5.58. 2sd1032.pdf Size:134K _inchange_semiconductor

2SD1092
2SD1092

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1032 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Large Collector Power Dissipation ·Complement to Type 2SB812 APPLICATIONS ·Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60

5.59. 2sd1062.pdf Size:167K _inchange_semiconductor

2SD1092
2SD1092

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220 package Ў¤ Low collector saturation voltage Ў¤ Complement to type 2SB826 Ў¤ Wide area of safe operation APPLICATIONS Ў¤ Relay drivers, Ў¤ High-speed inverters, Ў¤ Converters Ў¤ General high-current switching applications PINNING PIN 1 2 3 Base DESCRIPTION 2SD1062 Abso

5.60. 2sd1049.pdf Size:154K _inchange_semiconductor

2SD1092
2SD1092

Inchange Semiconductor Product Specification Silicon NPN Power Transistors · 2SD1049 DESCRIPTION Ў¤ With TO-3PN package Ў¤ High current, Ў¤ High speed switching Ў¤ High reliability APPLICATIONS Ў¤ Switching regulators Ў¤ Motor controls Ў¤ High frequency inverters Ў¤ General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter D

5.61. 2sd1025.pdf Size:119K _inchange_semiconductor

2SD1092
2SD1092

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1025 DESCRIPTION Ў¤ With TO-220 package Ў¤ High DC current gain Ў¤ DARLINGTON PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg TOR NDU ICO E SEM ANG INCH PARAMETER CONDITIONS

5.62. 2sd1064.pdf Size:250K _inchange_semiconductor

2SD1092
2SD1092

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1064 DESCRIPTION ·With TO-3PN package ·Complement to type 2SB828 ·Wide area of safe operation ·Low collector saturation voltage APPLICATIONS ·Relay drivers, ·High-speed inverters, ·Converters, ·General high-current switching applications . PINNING PIN DESCRIPTION 1 Base Collector;co

5.63. 2sd1065.pdf Size:257K _inchange_semiconductor

2SD1092
2SD1092

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1065 DESCRIPTION ·With TO-3PN package ·Complement to type 2SB829 ·Wide area of safe operation ·Low collector saturation voltage APPLICATIONS ·Relay drivers, ·High-speed inverters, ·Converters, ·General high-current switching applications . PINNING PIN DESCRIPTION 1 Base Collector;co

5.64. 2sd1061.pdf Size:164K _inchange_semiconductor

2SD1092
2SD1092

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220 package Ў¤ Low collector saturation voltage Ў¤ Wide ASO(safe operating area) Ў¤ Complement to type 2SB825 APPLICATIONS Ў¤ Universal high current switching as solenoid driving, Ў¤ High speed inverter and converter. relay drivers PINNING PIN 1 2 3 Base Collector;connected to moun

5.65. 2sd103.pdf Size:318K _inchange_semiconductor

2SD1092
2SD1092

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD103 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High Power Dissipation- : PC= 25W(Max)@TC=25? Complement to Type 2SB503 APPLICATIONS ·Designed for audio power amplifier, power switching, DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25

5.66. 2sd1027.pdf Size:134K _inchange_semiconductor

2SD1092
2SD1092

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1027 DESCRIPTION ·High DC Current Gain : hFE= 1500(Min.)@ IC= 10A, VCE= 3V ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) APPLICATIONS ·Designed for general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Co

5.67. 2sd1046.pdf Size:202K _inchange_semiconductor

2SD1092
2SD1092

Inchange Semiconductor Product Specification Silicon NPN Power Transistors · DESCRIPTION Ў¤ With TO-3PN package Ў¤ Complement to type 2SB816 Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For LF power amplifier, 50W output large power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SD1046 Fig.1 simplified outline (TO-3P

5.68. 2sd1060.pdf Size:158K _inchange_semiconductor

2SD1092
2SD1092

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1060 DESCRIPTION Ў¤ With TO-220 package Ў¤ Low collector saturation voltage Ў¤ Complement to type 2SB824 APPLICATIONS Ў¤ Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base DESCRI

5.69. 2sd1047.pdf Size:174K _inchange_semiconductor

2SD1092
2SD1092

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1047 DESCRIPTION Ў¤ Complement to type 2SB817 Ў¤ With TO-3PN package APPLICATIONS Ў¤ Power amplification Ў¤ Low frequency and audio band PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж )

5.70. 2sd1026.pdf Size:100K _inchange_semiconductor

2SD1092
2SD1092

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1026 DESCRIPTION ·High DC Current Gain : hFE= 1500(Min.)@ IC= 10A, VCE= 3V ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) APPLICATIONS ·Designed for general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Co

5.71. 2sd1005.pdf Size:337K _htsemi

2SD1092
2SD1092

2SD1005 TRANSISTOR (NPN) SOT-89-3L FEATURES Small Flat Package 1. BASE High Breakdown Voltage Excellent DC Current Gain Linearity 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1 A PC Collector

See also transistors datasheet: 2SD1084 , 2SD1085 , 2SD1085K , 2SD1087 , 2SD1088 , 2SD1089 , 2SD1090 , 2SD1091 , TIP3055 , 2SD1093 , 2SD1094 , 2SD1095 , 2SD1096 , 2SD1097 , 2SD1098 , 2SD1099 , 2SD11 .

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 2SD1092 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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