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2SD1092
  2SD1092
  2SD1092
 
2SD1092
  2SD1092
  2SD1092
 
2SD1092
  2SD1092
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
2SD1092 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SD1092 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SD1092

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 80

Maximum collector-base voltage |Ucb|, V: 55

Maximum collector-emitter voltage |Uce|, V: 55

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 4

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 500

Noise Figure, dB: -

Package of 2SD1092 transistor: TO247

2SD1092 Equivalent Transistors - Cross-Reference Search

2SD1092 PDF doc:

1.1. 2sd1092.pdf Size:285K _toshiba

2SD1092
2SD1092

4.1. 2sd1090.pdf Size:197K _toshiba

2SD1092
2SD1092

5.1. 2sd1052a.pdf Size:113K _toshiba

2SD1092
2SD1092
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5.2. 2sd1069.pdf Size:133K _toshiba

2SD1092
2SD1092
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5.3. 2sd1062.pdf Size:104K _sanyo

2SD1092
2SD1092
Ordering number:723H PNP/NPN Epitaxial Planar Silicon Transistors 2SB826/2SD1062 50V/12A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit:mm other general high-current switching applications. 2010C [2SB826/2SD1062] Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.5V (PNP), 0.4V (NPN) max. Wide ASO leading to high resistance to breakdown. 1 : Base 2 : Collector 3 : Emitter ( ) : 2SB826 JEDEC : TO-220AB EIAJ : SC46 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()60 V Collector-to-Emitter Voltage VCEO ()50 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()12 A Collector Current (Pulse) ICP ()15 A Collector Dissipation PC Tc=25?C 40 W ?C Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Condi

5.4. 2sd1046.pdf Size:115K _sanyo

2SD1092
2SD1092
Ordering number:677D PNP/NPN Epitaxial Planar Silicon Transistors 2SB816/2SD1046 For LF Power Amplifier, 50W Output Large Power Switching Applications Features Package Dimensions Capable of being mounted easily because of one- unit:mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB816/2SD1046] Wide ASO because of built-in ballast resistance. Goode dependence of fT on current and good HF characteristic. 1 : Base 2 : Collector 3 : Emitter ( ) : 2SB816 SANYO : TO-3PB Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()150 V Collector-to-Emitter Voltage VCEO ()120 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()8 A Collector Current (Pulse) ICP ()12 A Collector Dissipation PC Tc=25?C 80 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 40 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol C

5.5. 2sd1047p.pdf Size:30K _sanyo

2SD1092
2SD1092
Ordering number : ENN6572 2SB817P / 2SD1047P 2SB817P : PNP Epitaxial Planar Silicon Transistor 2SD1047P : NPN Triple Diffused Planar Silicon Transistor 2SB817P / 2SD1047P 140V / 12A, AF80W Output Applications Features Package Dimensions Capable of being mounted easily because of one- unit : mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817P / 2SD1047P] Wide ASO because of built-in ballast resistance. Goode dependence of fT on current and good HF 15.6 3.2 4.8 14.0 2.0 characteristic. 1.6 2.0 0.6 1.0 1 2 3 1 : Base 0.6 2 : Collector 3 : Emitter Specifications 5.45 5.45 SANYO : TO-3PB ( ) : 2SB817P Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (-)160 V Collector-to-Emitter Voltage VCEO (-)140 V Emitter-to-Base Voltage VEBO (-)6 V Collector Current IC (-)12 A Collector Current (Pulse) ICP (-)15 A Collector Dissipation PC Tc=25C 120 W Junction

5.6. 2sd1047.pdf Size:125K _sanyo

2SD1092
2SD1092
Ordering number:680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Features Package Dimensions Capable of being mounted easily because of one- unit:mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817/2SD1047] Wide ASO because of on-chip ballast resistance. Good depenedence of fT on current and excellent high frequency responce. The descriptions in parentheses are for the 2SB817 only : other descriptions than those in parentheses are common to the 2SB817 and 2SD1047. 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()160 V Collector-to-Emitter Voltage VCEO ()140 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()12 A Collector Current (Pulse) ICP ()15 A Tc=25?C Collector Dissipation

5.7. 2sd1048.pdf Size:21K _sanyo

2SD1092
2SD1092
Ordering number : ENN694F 2SB815 / 2SD1048 PNP / NPN Epitaxial Planar Silicon Transistors 2SB815 / 2SD1048 General-Purpose AF Amplifier Applications Features Package Dimensions Ultrasmall package allows miniaturization unit : mm in end products. 2018B Large current capacity (IC=0.7A) and low-saturation [2SB815 / 2SD1048] voltage. 0.4 0.16 3 0 to 0.1 1 0.95 0.95 2 1.9 1 : Base 2.9 2 : Emitter 3 : Collector Specifications SANYO : CP ( ) : 2SB815 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)20 V Collector-to-Emitter Voltage VCEO (--)15 V Emitter-to-Base Voltage VEBO (--)5 V Collector Current IC (--)0.7 A Collector Current (Pulse) ICP (--)1.5 A Collector Dissipation PC 200 mW Junction Temperature Tj 125 C Storage Temperature Tstg --55 to +125 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=(--)15V, I

5.8. 2sb815_2sd1048.pdf Size:239K _sanyo

2SD1092
2SD1092
Ordering number : ENN694F 2SB815 / 2SD1048 PNP / NPN Epitaxial Planar Silicon Transistors 2SB815 / 2SD1048 General-Purpose AF Amplifier Applications Features Package Dimensions Ultrasmall package allows miniaturization unit : mm in end products. 2018B Large current capacity (IC=0.7A) and low-saturation [2SB815 / 2SD1048] voltage. 0.4 0.16 3 0 to 0.1 1 0.95 0.95 2 1.9 1 : Base 2.9 2 : Emitter 3 : Collector Specifications SANYO : CP ( ) : 2SB815 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)20 V Collector-to-Emitter Voltage VCEO (--)15 V Emitter-to-Base Voltage VEBO (--)5 V Collector Current IC (--)0.7 A Collector Current (Pulse) ICP (--)1.5 A Collector Dissipation PC 200 mW Junction Temperature Tj 125 C Storage Temperature Tstg --55 to +125 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=(--)15V, I

5.9. 2sd1012.pdf Size:57K _sanyo

2SD1092
2SD1092
Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1.3 1.3 1 : Emitter 2 : Collector ( ) : 2SB808 3 : Base 3.0 3.8 SANYO : SPA Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()20 V Collector-to-Emitter Voltage VCEO ()15 V Emitter-to-Base Voltage VEBO ()5 V Collector Current IC ()0.7 A Collector Current (Pulse) ICP ()1.5 A Collector Dissipation PC 250 mW Junction Temperature Tj 125 ?C Storage Temperature Tstg 55 to +125 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=()15V, IE=0 ()1.0 A Emitter Cutoff Current IEBO VEB=()4V, IC=0 ()1.0 A hFE1 VCE=()2V, IC=()50mA 160* 960* DC Current Gain hFE2 VCE=()2V, IC=()500mA P

5.10. 2sd1060.pdf Size:55K _sanyo

2SD1092
2SD1092
Ordering number : EN686J 2SB824 / 2SD1060 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB824 / 2SD1060 50V / 5A Switching Applications Applications Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching. Features Low collector-to-emitter saturation voltage : VCE(sat)= (--)0.4V max / IC= (--)3A, IB= (--)0.3A. Specifications ( ) : 2SB824 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)60 V Collector-to-Emitter Voltage VCEO (--)50 V Emitter-to-Base Voltage VEBO (--)6 V Collector Current IC (--)5 A Collector Current (Pulse) ICP (--)9 A 1.75 W Collector Dissipation PC Tc=25C30 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=(--)40V, IE=0A (--)0.1 mA Emitter Cutoff

5.11. 2sd1061.pdf Size:102K _sanyo

2SD1092
2SD1092
Ordering number:687G PNP/NPN Epitaxial Planar Silicon Transistors 2SB825/2SD1061 50V/7A Switching Applications Applications Package Dimensions Universal high current switching as solenoid driving, unit:mm high speed inverter and converter. 2010C [2SB825/2SD1061] Features Low saturation voltage : VCE(sat)=()0.4V max. Wide ASO JEDEC : TO-220AB 1: Base ( ) : 2SB825 EIAJ : SC-46 2 : Collector 3 : Emitter Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()60 V Collector-to-Emitter Voltage VCEO ()50 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()7 A Collector Current (Pulse) ICP ()12 A Collector Dissipation PC Tc=25?C 40 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=()40V, IE=0 ()0.1 mA Emitter Cutoff Cu

5.12. 2sd1063.pdf Size:102K _sanyo

2SD1092
2SD1092
Ordering number:688H PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB827/2SD1063 50V/7A Switching Applicationsa Applications Package Dimensions Universal high current switching as solenoid driving, unit:mm high speed inverter and converter. 2022A [2SB827/2SD1063] Features Low collector-to-emitter saturation voltage : VCE(sat)=()0.4V max. Wide ASO. 1 : Base 2 : Collector 3 : Emitter ( ) : 2SB827 SANYO : TO-3PB Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()60 V Collector-to-Emitter Voltage VCEO ()50 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()7 A Collector Current (Pulse) ICP ()14 A Collector Dissipation PC Tc=25?C 60 W ?C Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=()40V, IE=0 ()0.1 mA Em

5.13. 2sd1064.pdf Size:104K _sanyo

2SD1092
2SD1092
Ordering number:722G PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB828/2SD1064 50V/12A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit:mm other general high-current switching applications. 2022A [2SB828/2SD1064] Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.5V(PNP), 0.4V(NPN) max. Wide ASO leading to high resistance to breakdown. 1 ; Base 2 : Collector 3 : Emitter ( ) : 2SB828 Specifications SANYO : TO-3PB Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()60 V Collector-to-Emitter Voltage VCEO ()50 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()12 A Collector Current (Pulse) ICP ()17 A Collector Dissipation PC 80 W Tc=25?C Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit mi

5.14. 2sd1065.pdf Size:119K _sanyo

2SD1092
2SD1092
Ordering number:825C PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB829/2SD1065 50V/15A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit:mm other general high-current switching applications. 2022A [2SD829/2SD1065] Features Low-saturation collector-to-emitter voltage : VCE(sat) =0.5V max. Wide ASO leading to high resistance to breakdown. 1 : Base 2 : Collector 3 : Emitter ( ) : 2SB829 SANYO : TO-3PB Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()60 V Collector-to-Emitter Voltage VCEO ()50 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()15 A Collector Current (Pulse) ICP ()20 A Collector Dissipation PC Tc=25?C 90 W ?C Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Colle

5.15. 2sb817p_2sd1047p.pdf Size:30K _sanyo

2SD1092
2SD1092
Ordering number : ENN6572 2SB817P / 2SD1047P 2SB817P : PNP Epitaxial Planar Silicon Transistor 2SD1047P : NPN Triple Diffused Planar Silicon Transistor 2SB817P / 2SD1047P 140V / 12A, AF80W Output Applications Features Package Dimensions Capable of being mounted easily because of one- unit : mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817P / 2SD1047P] Wide ASO because of built-in ballast resistance. Goode dependence of fT on current and good HF 15.6 3.2 4.8 14.0 2.0 characteristic. 1.6 2.0 0.6 1.0 1 2 3 1 : Base 0.6 2 : Collector 3 : Emitter Specifications 5.45 5.45 SANYO : TO-3PB ( ) : 2SB817P Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (-)160 V Collector-to-Emitter Voltage VCEO (-)140 V Emitter-to-Base Voltage VEBO (-)6 V Collector Current IC (-)12 A Collector Current (Pulse) ICP (-)15 A Collector Dissipation PC Tc=25C 120 W Junction

5.16. 2sd1005.pdf Size:211K _nec

2SD1092
2SD1092

5.17. 2sd1000.pdf Size:218K _nec

2SD1092
2SD1092

5.18. 2sd1001.pdf Size:208K _nec

2SD1092
2SD1092

5.19. 2sd1006_2sd1007.pdf Size:223K _nec

2SD1092
2SD1092

5.20. 2sd1033.pdf Size:201K _nec

2SD1092
2SD1092

5.21. 2sd1020.pdf Size:132K _nec

2SD1092
2SD1092

5.22. 2sd1055.pdf Size:124K _rohm

2SD1092
2SD1092
Transistors Medium Power Transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M FFeatures FExternal dimensions (Units: mm) 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M FStructure Epitaxial planar type NPN silicon transistor (96-217-B24) 256 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / Transistors Transistors 2SD1919 / 2SD1227M FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C) 257 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / Transistors Transistors 2SD1919 / 2SD1227M FPackaging specifications and hFE hFE values are classified as follows : FElectrical characteristic curves 258 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / Transistors Transistors 2SD1919 / 2SD1227M 259

5.23. 2sd1030_e.pdf Size:37K _panasonic

2SD1092
2SD1092
Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 High emitter to base voltage VEBO. 3 Low noise voltage NV. Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing and the magazine packing. 0.1 to 0.3 0.4 0.2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V 1:Base JEDEC:TO236 Collector to emitter voltage VCEO 40 V 2:Emitter EIAJ:SC59 3:Collector Mini Type Package Emitter to base voltage VEBO 15 V Peak collector current ICP 100 mA Marking symbol : 1Z Collector current IC 50 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions m

5.24. 2sd1011_e.pdf Size:42K _panasonic

2SD1092
2SD1092
Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 100 V 1.27 1.27 Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 15 V 1 2 3 1:Emitter Peak collector current ICP 50 mA 2:Collector Collector current IC 20 mA 3:Base 2.54 0.15 JEDEC:TO92 Collector power dissipation PC 300 mW EIAJ:SC43A Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 60V, IE = 0 100 nA Collector cutoff current ICEO VCE = 60V, IB = 0 1 A Collector to base voltage VCBO IC = 10 A, IE = 0 100 V Collector to emitter voltage VCEO IC =

5.25. 2sd1010.pdf Size:38K _panasonic

2SD1092
2SD1092
Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 0.45 0.1 0.45 0.1 Parameter Symbol Ratings Unit 1.27 1.27 Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V 1 2 3 1:Emitter Emitter to base voltage VEBO 15 V 2:Collector Peak collector current ICP 100 mA 3:Base 2.54 0.15 JEDEC:TO92 Collector current IC 50 mA EIAJ:SC43A Collector power dissipation PC 300 mW Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 20V, IE = 0 100 nA Collector cutoff current ICEO VCE = 20V, IB = 0 1 A Collector to base voltage VCBO IC = 10 A, IE = 0 50 V Collector to emit

5.26. 2sd1009.pdf Size:34K _panasonic

2SD1092
2SD1092

5.27. 2sd1010_e.pdf Size:42K _panasonic

2SD1092
2SD1092
Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 0.45 0.1 0.45 0.1 Parameter Symbol Ratings Unit 1.27 1.27 Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V 1 2 3 1:Emitter Emitter to base voltage VEBO 15 V 2:Collector Peak collector current ICP 100 mA 3:Base 2.54 0.15 JEDEC:TO92 Collector current IC 50 mA EIAJ:SC43A Collector power dissipation PC 300 mW Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 20V, IE = 0 100 nA Collector cutoff current ICEO VCE = 20V, IB = 0 1 A Collector to base voltage VCBO IC = 10 A, IE = 0 50 V Collector to emit

5.28. 2sd1051.pdf Size:40K _panasonic

2SD1092
2SD1092
Transistor 2SD1051 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm Complementary to 2SB819 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features High collector to emitter voltage VCEO. Large collector power dissipation PC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Absolute Maximum Ratings (Ta=25?C) 3 2 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V 2.5 2.5 Collector to emitter voltage VCEO 40 V Emitter to base voltage VEBO 5 V Peak collector current ICP 3 A 1:Base 2:Collector EIAJ:SC71 Collector current IC 1.5 A 3:Emitter M Type Mold Package Collector power dissipation PC* 1 W Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion Electrical Characteristics (Ta=25?C) P

5.29. 2sd1030.pdf Size:37K _panasonic

2SD1092
2SD1092
Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 High emitter to base voltage VEBO. 3 Low noise voltage NV. Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing and the magazine packing. 0.1 to 0.3 0.4 0.2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V 1:Base JEDEC:TO236 Collector to emitter voltage VCEO 40 V 2:Emitter EIAJ:SC59 3:Collector Mini Type Package Emitter to base voltage VEBO 15 V Peak collector current ICP 100 mA Marking symbol : 1Z Collector current IC 50 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions m

5.30. 2sd1011.pdf Size:42K _panasonic

2SD1092
2SD1092
Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 100 V 1.27 1.27 Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 15 V 1 2 3 1:Emitter Peak collector current ICP 50 mA 2:Collector Collector current IC 20 mA 3:Base 2.54 0.15 JEDEC:TO92 Collector power dissipation PC 300 mW EIAJ:SC43A Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 60V, IE = 0 100 nA Collector cutoff current ICEO VCE = 60V, IB = 0 1 A Collector to base voltage VCBO IC = 10 A, IE = 0 100 V Collector to emitter voltage VCEO IC =

5.31. 2sd1051_e.pdf Size:44K _panasonic

2SD1092
2SD1092
Transistor 2SD1051 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm Complementary to 2SB819 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features High collector to emitter voltage VCEO. Large collector power dissipation PC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Absolute Maximum Ratings (Ta=25?C) 3 2 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V 2.5 2.5 Collector to emitter voltage VCEO 40 V Emitter to base voltage VEBO 5 V Peak collector current ICP 3 A 1:Base 2:Collector EIAJ:SC71 Collector current IC 1.5 A 3:Emitter M Type Mold Package Collector power dissipation PC* 1 W Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion Electrical Characteristics (Ta=25?C) P

5.32. 2sd1060.pdf Size:265K _utc

2SD1092
2SD1092
UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR ? FEATURES * Low collector-to-emitter saturation voltage: VCE(SAT)=0.4V max/IC=3A, IB=0.3A ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD1060L-x-AB3-R 2SD1060G-x-AB3-R SOT-89 B C E Tape Reel 2SD1060L-x-T60-K 2SD1060G-x-T60-K TO-126 B C E Bulk 2SD1060L-x-T92-B 2SD1060G-x-T92-B TO-92 E C B Tape Box 2SD1060L-x-T92-K 2SD1060G-x-T92-K TO-92 E C B Bulk 2SD1060L-x-T92-R 2SD1060G-x-T92-R TO-92 E C B Tape Reel 2SD1060L-x-TA3-T 2SD1060G-x-TA3-T TO-220 B C E Tube 2SD1060L-x-TF3-T 2SD1060G-x-TF3-T TO-220F B C E Tube 2SD1060L-x-TM3-T 2SD1060G-x-TM3-T TO-251 B C E Tube 2SD1060L-x-TN3-T 2SD1060G-x-TN3-T TO-252 B C E Tube 2SD1060L-x-TN3-R 2SD1060G-x-TN3-R TO-252 B C E Tape Reel www.unisonic.com.tw 1 of 5 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R208-023.E 2SD1060 NPN SILICON TRANSISTOR ? ABSOLUTE MAXIMUM R

5.33. 2sd1072.pdf Size:135K _fuji

2SD1092
2SD1092

5.34. 2sd1071.pdf Size:102K _fuji

2SD1092
2SD1092
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

5.35. 2sd1049.pdf Size:102K _fuji

2SD1092
2SD1092
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

5.36. 2sd1073.pdf Size:97K _fuji

2SD1092
2SD1092
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

5.37. 2sd1088.pdf Size:111K _mospec

2SD1092
2SD1092
A A A

5.38. 2sd1083.pdf Size:56K _no

2SD1092
2SD1092

5.39. 2sd1015.pdf Size:39K _sony

2SD1092
2SD1092

5.40. 2sd1068.pdf Size:158K _sony

2SD1092
2SD1092

5.41. 2sd1005.pdf Size:72K _secos

2SD1092
2SD1092
2SD1005 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES Small Flat Package 4 High Breakdown Voltage Excellent DC Current Gain Linearity 1 2 3 B C A E E C CLASSIFICATION OF hFE(1) Product-Rank 2SD1005-W 2SD1005-V 2SD1005-U B D Range 90~180 135~270 200~400 F G Marking BW BV BU H K J L Collector 2 PACKAGE INFORMATION Millimeter Millimeter REF. REF. Min. Max. Min. Max. 1 A 4.40 4.60 G 0.40 0.58 Package MPQ Leader Size B 3.94 4.25 H 1.50 TYP Base C 1.40 1.60 J 3.00 TYP SOT-89 1K 7 inch D 2.25 2.60 K 0.32 0.52 3 E 1.50 1.85 L 0.35 0.44 Emitter F 0.89 1.20 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage V 80 V CEO Emitter-Base Voltage VEBO 5 V Collector Current-Continuous I 1 A C C

5.42. 2sd1062.pdf Size:55K _jmnic

2SD1092
2SD1092
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1062 DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Complement to type 2SB826 ·Wide area of safe operation APPLICATIONS ·Relay drivers, ·High-speed inverters, ·Converters ·General high-current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 12 A ICM Collector current-peak 15 A PC Collector power dissipation TC=25? 40 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1062 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN

5.43. 2sd1023.pdf Size:81K _jmnic

2SD1092
2SD1092
Product Specification www.jmnic.com Silicon Power Transistors 2SD1023 DESCRIPTION ·DARLINGTON ·High DC current gain ·With TO-220 package PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 7 V IC Collector current-Continuous 5 A ICM Collector current-Peak 8 A IB Base current 0.5 A IBM Base current-Peak 1 A PT Total power dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification www.jmnic.com Silicon Power Transistors 2SD1023 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=3A; IB=5mA 1.5 V VBEsat Emit

5.44. 2sd1025.pdf Size:80K _jmnic

2SD1092
2SD1092
Product Specification www.jmnic.com Silicon Power Transistors 2SD1025 DESCRIPTION ·DARLINGTON ·With TO-220 package PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 8 A ICM Collector current-Peak 12 A IB Base current 0.5 A IBM Base current-Peak 1.0 A PT Total power dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Thermal resistance junction to case 2.5 ?/W R?JC JMnic Product Specification www.jmnic.com Silicon Power Transistors 2SD1025 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V

5.45. 2sd1049.pdf Size:115K _jmnic

2SD1092
2SD1092
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1049 · DESCRIPTION ·With TO-3PN package ·High current, ·High speed switching ·High reliability APPLICATIONS ·Switching regulators ·Motor controls ·High frequency inverters ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 25 A IB Base current 5 A PC Collector power dissipation TC=25? 80 W Tj Junction temperature 150 ? Tstg Storage temperature -40~150 ? JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1049 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDIT

5.46. 2sd1026.pdf Size:31K _jmnic

2SD1092
2SD1092
Product Specification www.jmnic.com 2SD1026 Silicon NPN Transistors Features B C E ?With TO-247 package ?Darlington transistor Absolute Maximum Ratings Tc=25? SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 100 V VCEO Collector to emitter voltage 100 V VEBO Emitter to base voltage 7 V IB Base current 1 A IC Collector current 15 A PC Collector power dissipation 100 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? TO-247 Electrical Characteristics Tc=25? SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT ICBO Collector cut-off current VCB=100V; IE=0 0.1 mA ICEO Collector breakdown voltage VCE=100V; IB=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 5 mA VCBO Collector-base breakdown voltage VCEO Collector-emitter breakdown voltage IC=30mA; IB=0 100 V VEBO Emitter-base breakdown voltage VCE(sat-1) Collector-emitter saturation voltages IC=10A; IB=20mA 1.5 V VCE(sat-2) Collector-emitter saturation voltages hFE-1 Forw

5.47. 2sd1060.pdf Size:128K _jmnic

2SD1092
2SD1092
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1060 DESCRIPTION ·With TO-220 package ·Low collector-emitter saturation voltage ·Complement to type 2SB824 APPLICATIONS ·Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 5 A ICP Collector current (Pulse) 9 A PC Collector power dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1060 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX

5.48. 2sd1024.pdf Size:301K _shindengen

2SD1092
2SD1092
SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1024 Case : TO-220 (T8L10) 8A NPN RATINGS Unit : mm

5.49. 2sd1062.pdf Size:167K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220 package Ў¤ Low collector saturation voltage Ў¤ Complement to type 2SB826 Ў¤ Wide area of safe operation APPLICATIONS Ў¤ Relay drivers, Ў¤ High-speed inverters, Ў¤ Converters Ў¤ General high-current switching applications PINNING PIN 1 2 3 Base DESCRIPTION 2SD1062 Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH Emitter CONDITIONS VALUE 60 Collector-base voltage Open emitter Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25Ўж Open base Open collector 50 6 12 15 40 150 -55~150 Collector;connected to mounting base UNIT V V V A A W Ўж Ўж

5.50. 2sd1023.pdf Size:119K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1023 DESCRIPTION Ў¤ With TO-220 package Ў¤ High DC current gain Ў¤ DARLINGTON PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage CONDITIONS Open emitter NDU ICO E SEM ANG INCH Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current-Continuous Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25Ўж TOR 200 200 7 5 8 0.5 1 30 150 -55~150 VALUE UNIT V V V A A A A W Ўж Ўж THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.17 UNIT Ўж /W

5.51. 2sd1025.pdf Size:119K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1025 DESCRIPTION Ў¤ With TO-220 package Ў¤ High DC current gain Ў¤ DARLINGTON PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg TOR NDU ICO E SEM ANG INCH PARAMETER CONDITIONS VALUE 200 Collector-base voltage Open emitter Collector-emitter voltage Open base 200 7 Emitter-base voltage Open collector Collector current 8 Collector current-Peak 12 Base current 0.5 Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25Ўж 1.0 50 150 -55~150 UNIT V V V A A A A W Ўж Ўж THERMAL CHARACTERISTICS SYMBOL R¦Ё j-C PARAMETER Thermal resistance junction to case VALUE 2.5 UNIT Ўж /W

5.52. 2sd1037.pdf Size:128K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1037 DESCRIPTION Ў¤ With MT-200 package Ў¤ Excellent safe operating area Ў¤ High current capability APPLICATIONS Ў¤ For electrical supply ,DC-DC converters and low frequency power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION Ў¤ Absolute maximum ratings (Ta=25°C) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 150 Collector-base voltage Open emitter Collector-emitter voltage Open base 120 6 30 TC=25Ўж 180 150 -55~150 Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Open collector Emitter Fig.1 simplified outline (MT-200) and symbol UNIT V V V A W Ўж Ўж

5.53. 2sd1046.pdf Size:202K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors · DESCRIPTION Ў¤ With TO-3PN package Ў¤ Complement to type 2SB816 Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For LF power amplifier, 50W output large power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SD1046 Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 150 Collector-base voltage Open emitter Collector-emitter voltage Open base 120 6 Emitter-base voltage Open collector Collector current Collector current -peak Collector power dissipation Junction temperature Storage temperature TC=25Ўж 8 12 80 150 -40~150 UNIT V V V A A W Ўж Ўж

5.54. 2sd1047.pdf Size:174K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1047 DESCRIPTION Ў¤ Complement to type 2SB817 Ў¤ With TO-3PN package APPLICATIONS Ў¤ Power amplification Ў¤ Low frequency and audio band PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 160 Collector-base voltage Open emitter Collector-emitter voltage Open base 140 6 Emitter-base voltage Open collector Collector current (DC) 12 Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25Ўж 15 100 150 -40~150 UNIT V V V A A W Ўж Ўж

5.55. 2sd103.pdf Size:318K _inchange_semiconductor

2SD1092
2SD1092
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD103 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High Power Dissipation- : PC= 25W(Max)@TC=25? Complement to Type 2SB503 APPLICATIONS ·Designed for audio power amplifier, power switching, DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 3 A IE Emitter Current-Continuous -3 A IBB Base Current-Continuous 1 A Collector Power Dissipation PC @TC=25? 25 W TJ Junction Temperature 150 ? Storage Temperature -65~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD103 ELECTRICAL CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS M

5.56. 2sd1049.pdf Size:154K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors · 2SD1049 DESCRIPTION Ў¤ With TO-3PN package Ў¤ High current, Ў¤ High speed switching Ў¤ High reliability APPLICATIONS Ў¤ Switching regulators Ў¤ Motor controls Ў¤ High frequency inverters Ў¤ General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25Ўж ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 120 80 7 25 5 TC=25Ўж 80 150 -55~150 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Open collector Fig.1 simplified outline (TO-3PN) and symbol UNIT V V V A A W Ўж Ўж THERMAL CHARACTERISTICS SYMBOL R¦И jc CHARACTERISTICS Thermal resistance junction to case MAX 1.55 UNIT Ўж /W

5.57. 2sd1032.pdf Size:134K _inchange_semiconductor

2SD1092
2SD1092
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1032 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Large Collector Power Dissipation ·Complement to Type 2SB812 APPLICATIONS ·Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A Collector Power Dissipation PC @ TC=25? 60 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1032 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 60 V Collector-Emitter Saturat

5.58. 2sd1044.pdf Size:257K _inchange_semiconductor

2SD1092
2SD1092
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1044 DESCRIPTION ·High DC Current Gain : hFE= 700(Min.)@ IC= 1A, VCE= 4V ·High Collector-Emitter Breakdown Voltage- : V(BR) CEO= 80V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCER Collector-Emitter Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A IBB Base Current- Continuous 3 A Collector Power Dissipation PC @TC=25? 60 W Tj Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1044 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS

5.59. 2sd1022.pdf Size:267K _inchange_semiconductor

2SD1092
2SD1092
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1022 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 3A ·Low Saturation Voltage APPLICATIONS ·Designed for general purpoe amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICP Collector Current-Peak 8 A IBB Base Current-Continuous 0.5 A IBM Base Current-Peak 1 A Collector Power Dissipation PC @ TC=25? 30 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 4.17 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington

5.60. 2sd1024.pdf Size:119K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1024 DESCRIPTION Ў¤ With TO-220 package Ў¤ High DC current gain Ў¤ DARLINGTON PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg TOR NDU ICO E SEM ANG INCH Collector-base voltage Open emitter 100 Collector-emitter voltage Open base 100 7 Emitter-base voltage Open collector Collector current-Continuous Collector current-Peak 8 12 Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25Ўж 0.5 1 50 150 -55~150 PARAMETER CONDITIONS VALUE UNIT V V V A A A A W Ўж Ўж THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 2.5 UNIT Ўж /W

5.61. 2sd1026.pdf Size:100K _inchange_semiconductor

2SD1092
2SD1092
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1026 DESCRIPTION ·High DC Current Gain : hFE= 1500(Min.)@ IC= 10A, VCE= 3V ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) APPLICATIONS ·Designed for general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 22 A IBB Base Current- Continuous 1 A IBM Base Current- Peak 2 A Collector Power Dissipation PC @TC=25? 100 W Tj Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 1.25 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD10

5.62. 2sd1060.pdf Size:158K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1060 DESCRIPTION Ў¤ With TO-220 package Ў¤ Low collector saturation voltage Ў¤ Complement to type 2SB824 APPLICATIONS Ў¤ Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 60 Collector-base voltage Open emitter Collector-emitter voltage Open base 50 6 5 9 TC=25Ўж 30 150 -55~150 Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature Open collector Emitter UNIT V V V A A W Ўж Ўж

5.63. 2sd1061.pdf Size:164K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220 package Ў¤ Low collector saturation voltage Ў¤ Wide ASO(safe operating area) Ў¤ Complement to type 2SB825 APPLICATIONS Ў¤ Universal high current switching as solenoid driving, Ў¤ High speed inverter and converter. relay drivers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SD1061 Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 60 Collector-base voltage Open emitter Collector-emitter voltage Open base 50 6 7 12 TC=25Ўж 40 150 -55~150 Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature Open collector UNIT V V V A A W Ўж Ўж

5.64. 2sd1088.pdf Size:141K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1088 DESCRIPTION ·With TO-220 package ·High DC current gain ·DARLINGTON APPLICATIONS ·For switching igniter applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 250 V VEBO Emitter-base voltage Open collector 5 V IC Collector current-continuous 6 A ICM Collector current-peak 10 A IB Base current 1 A PD Total power dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1088 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sus

5.65. 2sd1069.pdf Size:131K _inchange_semiconductor

2SD1092
2SD1092
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1069 DESCRIPTION ·High Collector Current Capability ·High Collector Power Dissipation Capability ·Built-in Damper Diode APPLICATIONS ·TV horizontal deflection output applications. ·High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A IBB Base Current-Continuous 2 A Collector Power Dissipation 1.75 Ta=25? PC W Collector Power Dissipation 40 TC=25? Tj Junction Temperature 150 ? Storage Ttemperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1069 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TY

5.66. 2sd1063.pdf Size:198K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors · 2SD1063 DESCRIPTION Ў¤ With TO-3PN package Ў¤ Wide area of safe operation Ў¤ Low collector saturation voltage Ў¤ Complement to type 2SB827 APPLICATIONS Ў¤ Universal high current switching as solenoid driving,high speed inverter and converter. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 60 Collector-base voltage Open emitter Collector-emitter voltage Open base 50 6 Emitter-base voltage Open collector Collector current (DC) Collector current -peak Collector power dissipation Junction temperature Storage temperature TC=25Ўж 7 14 60 150 -55~150 UNIT V V V A A W Ўж Ўж

5.67. 2sd1064.pdf Size:250K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1064 DESCRIPTION ·With TO-3PN package ·Complement to type 2SB828 ·Wide area of safe operation ·Low collector saturation voltage APPLICATIONS ·Relay drivers, ·High-speed inverters, ·Converters, ·General high-current switching applications . PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 12 A ICM Collector current -peak 17 A PC Collector power dissipation TC=25? 80 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1064 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMET

5.68. 2sd1027.pdf Size:134K _inchange_semiconductor

2SD1092
2SD1092
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1027 DESCRIPTION ·High DC Current Gain : hFE= 1500(Min.)@ IC= 10A, VCE= 3V ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) APPLICATIONS ·Designed for general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 22 A IBB Base Current- Continuous 1 A IBM Base Current- Peak 2 A Collector Power Dissipation PC @TC=25? 100 W Tj Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 1.25 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD10

5.69. 2sd1065.pdf Size:257K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1065 DESCRIPTION ·With TO-3PN package ·Complement to type 2SB829 ·Wide area of safe operation ·Low collector saturation voltage APPLICATIONS ·Relay drivers, ·High-speed inverters, ·Converters, ·General high-current switching applications . PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 15 A ICM Collector current -peak 20 A PC Collector power dissipation TC=25? 90 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1065 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMET

5.70. 2sd1073.pdf Size:69K _inchange_semiconductor

2SD1092
2SD1092
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1073 DESCRIPTION ·With TO-220 package ·High DC current gain ·DARLINGTON ·Low saturation voltage APPLICATIONS ·Audio power amplifiers ·Relay and solenoid drivers ·Motor controls ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 250 V VEBO Emitter-base voltage Open collector 30 V IC Collector current-continuous 4 A IB Base current 0.3 A PC Collector power dissipation TC=25? 60 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? THERMAL CHARACTERISTICS SYMBOL CHARACTERISTICS MAX UNIT R?jc Thermal resistance junction to case 2.0 ?/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2S

5.71. 2sd1005.pdf Size:337K _htsemi

2SD1092
2SD1092
2SD1005 TRANSISTOR (NPN) SOT-89-3L FEATURES Small Flat Package 1. BASE High Breakdown Voltage Excellent DC Current Gain Linearity 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1 A PC Collector Power Dissipation 500 mW R?JA Thermal Resistance From Junction To Ambient 250 ?/W Tj Junction Temperature 150 ? Tstg Storage Temperature -55~+150 ? ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=0.1mA,IE=0 100 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 80 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 5 V Collector cut-off current ICBO VCB=100V,IE=0 0.1 µA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 µA hFE(1)* VCE=2V, IC=100mA 90 400 DC

See also transistors datasheet: 2SD1084 , 2SD1085 , 2SD1085K , 2SD1087 , 2SD1088 , 2SD1089 , 2SD1090 , 2SD1091 , TIP3055 , 2SD1093 , 2SD1094 , 2SD1095 , 2SD1096 , 2SD1097 , 2SD1098 , 2SD1099 , 2SD11 .

Keywords

 2SD1092 Datasheet  2SD1092 Datenblatt  2SD1092 RoHS  2SD1092 Distributor
 2SD1092 Application Notes  2SD1092 Component  2SD1092 Circuit  2SD1092 Schematic
 2SD1092 Equivalent  2SD1092 Cross Reference  2SD1092 Data Sheet  2SD1092 Fiche Technique

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