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2SD1155
  2SD1155
  2SD1155
 
2SD1155
  2SD1155
  2SD1155
 
2SD1155
  2SD1155
 
 
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100DA025D .. 2N100
2N1000 .. 2N119
2N1190 .. 2N1412A
2N1413 .. 2N1655
2N1656 .. 2N1990R
2N1990S .. 2N2221A
2N2221ACSM .. 2N2484ACSM
2N2484ADCSM .. 2N2773
2N2774 .. 2N2970
2N2971 .. 2N3241A
2N3242 .. 2N3506
2N3506L .. 2N3791SM
2N3792 .. 2N4057
2N4058 .. 2N457A
2N457B .. 2N5101
2N5102 .. 2N5356
2N5357 .. 2N5704
2N5705 .. 2N6022
2N6024 .. 2N634A
2N635 .. 2N6655-2
2N6655A .. 2N819
2N82 .. 2S120
2S121 .. 2SA1079
2SA108 .. 2SA1282
2SA1282A .. 2SA1408R
2SA1409 .. 2SA1577W
2SA1578 .. 2SA183
2SA1830 .. 2SA249
2SA25 .. 2SA496Y
2SA497 .. 2SA725
2SA726 .. 2SA927
2SA928 .. 2SB1102
2SB1103 .. 2SB1261
2SB1261-Z .. 2SB1555B
2SB1555C .. 2SB311
2SB312 .. 2SB511F
2SB512 .. 2SB696K
2SB697 .. 2SB858C
2SB858D .. 2SC1044
2SC1045 .. 2SC1253
2SC1254 .. 2SC1469A
2SC146A .. 2SC169
2SC1698 .. 2SC1924
2SC1925 .. 2SC2196
2SC2197 .. 2SC24
2SC240 .. 2SC2630
2SC2631 .. 2SC2821
2SC2821E .. 2SC306
2SC3060 .. 2SC3262
2SC3263 .. 2SC3443
2SC3444 .. 2SC3617
2SC3618 .. 2SC3780C
2SC3780D .. 2SC3981
2SC3982 .. 2SC4163L
2SC4163M .. 2SC4422
2SC4423 .. 2SC4725
2SC4726 .. 2SC5031N
2SC5031O .. 2SC5323
2SC5324 .. 2SC569
2SC5690 .. 2SC647P
2SC648 .. 2SC847
2SC848 .. 2SD1020G
2SD1020O .. 2SD1218
2SD1219 .. 2SD1402O
2SD1403 .. 2SD1618E
2SD1618S .. 2SD1803
2SD1803Q .. 2SD2017
2SD2018 .. 2SD2342B
2SD2342C .. 2SD313E
2SD313F .. 2SD532
2SD533 .. 2SD732
2SD732K .. 2SD931
2SD932 .. 3DD5024P
3DD5032 .. 40412V2
40413 .. 9013F
9013G .. AC180KL
AC180L .. AD462
AD463 .. AM1011-075
AM1011-300 .. BC107CSM
BC107P .. BC206C
BC207 .. BC307C
BC307VI .. BC418VI
BC419 .. BC558A
BC558AP .. BC848CW
BC848CWT1 .. BCP628C
BCP669A .. BCW66KG
BCW66KH .. BCX78-10
BCX78-7 .. BD149
BD149-10 .. BD281
BD282 .. BD515
BD515-1 .. BD814A
BD815 .. BDT60AF
BDT60B .. BDX37
BDX40 .. BF118
BF119 .. BF345
BF355 .. BF642
BF642P .. BFN23R
BFN24 .. BFR81
BFR81TO5 .. BFV10
BFV11 .. BFX79
BFX80 .. BLW46
BLW47 .. BSP52
BSP52T1 .. BSW21
BSW21A .. BT2604
BT2604T .. BTN2222AL3
BTN2222AN3 .. BU526A-7
BU526A-8 .. BUL704
BUL705 .. BUV46
BUV46A .. BUX82-5
BUX82-6 .. C9083
C9084 .. CENU52
CENU55 .. CJD340
CJD3439 .. CMPTA13
CMPTA14 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM5
D44VM6 .. DH3724CN
DH3725CD .. DTA123EE
DTA123EEA .. DTC143TEA
DTC143TKA .. DXTP03200BP5
DXTP19020DP5 .. ECG344
ECG345 .. ES3126
ESM1000 .. FA1L3N
FA1L4L .. FJPF13009
FJPF3305 .. FMMT5088
FMMT5089 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34-15
GFT34-30 .. GT2765
GT2766 .. HA7507
HA7510 .. HMBT2222A
HMBT2369 .. HUN2115
HUN2116 .. JA101P
JA101Q .. KD338
KD3442 .. KRA557F
KRA557U .. KRC416
KRC416E .. KSA1241O
KSA1241Y .. KSC2223Y
KSC2233 .. KSC945L
KSC945O .. KSP25
KSP26 .. KT3128B-1
KT3128B1 .. KT501V
KT502A .. KT808A
KT808A3 .. KT837A
KT837A1-IM .. KT997B
KT999A .. KTC3883
KTC3911 .. L8550HQLT1G
L8550HRLT1G .. MA8001
MA8002 .. MHQ2221
MHQ2222 .. MJD117L
MJD117T4 .. MJE488
MJE49 .. MM4429
MM4430 .. MMBT5127
MMBT5128 .. MMUN2214L
MMUN2215 .. MP4051
MP4052 .. MPQ5857
MPQ5858 .. MPS918R
MPS929 .. MRF449
MRF450 .. NA01EH
NA01EI .. NB011FV
NB011FY .. NB123H
NB123HH .. NB323Y
NB323Z .. NPS3707
NPS3708 .. NSS35200CF8T1G
NSS35200MR6T1G .. OC450
OC450K .. PBSS304NX
PBSS304NZ .. PEMB10
PEMB11 .. PN3906
PN3906R .. PZT5401
PZT5551 .. RN1116MFV
RN1117 .. RN2302
RN2303 .. RS7241
RS7406 .. SCE308
SCE309 .. SFT288
SFT298 .. SPS6012
SPS8050 .. ST2SB772U
ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
TEC9013H .. TIP50J3
TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
2SD1155 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SD1155 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SD1155

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 300

Maximum collector-base voltage |Ucb|, V: 400

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 50

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 400

Noise Figure, dB: -

Package of 2SD1155 transistor: SPECIAL

2SD1155 Equivalent Transistors - Cross-Reference Search

2SD1155 PDF doc:

4.1. 2sd1159.pdf Size:77K _sanyo

2SD1155
2SD1155
Ordering number:EN837E NPN Triple Diffused Planar Silicon Transistor 2SD1159 TV Horizontal Deflection Output, High-Current Switching Applications Features Package Dimensions · Capable of efficient drive with small internal loss due unit:mm to excellent tf. 2010C [2SD1159] 10.2 4.5 3.6 5.1 1.3 1.2 1 : Base 0.8 0.4 2 : Collector 1 2 3 3 : Emitter JEDEC : TO-220AB 2.55 2.55 EIAJ : SC-46 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 200 V Collector-to-Emitter Voltage VCEO 60 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 4.5 A Collector Current (Pulse) ICP 10 A Collector Dissipation PC Tc=25?C 40 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=40V, IE=0 0.1 mA Emitter Cutoff Current IEBO VEB=5V, IC=0 0.1 mA hFE

4.2. 2sd1153.pdf Size:83K _sanyo

2SD1155
2SD1155
Ordering number:828D PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors 2SB865/2SD1153 Drivers Applications Applications Package Dimensions · Relay drivers, hammer drivers, lamp drivers, motor unit:mm drivers. 2006A [2SB865/2SD1153] Features · High DC current gain (4000 or more). · Large current capacity and wide ASO. · Low saturation voltage. EIAJ : SC-51 B : Base ( ) : 2SB865 SANYO : MP C : Collector E : Emitter Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)80 V Collector-to-Emitter Voltage VCEO (–)50 V Emitter-to-Base Voltage VEBO (–)10 V Collector Current IC (–)1.5 A Collector Current (Pulse) ICP (–)3 A Collector Dissipation PC 900 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=(–)40V, IE=0 (–)0.1 µA Emitte

4.3. 2sd1157.pdf Size:97K _fuji

2SD1155
2SD1155
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

4.4. 2sd1158.pdf Size:126K _fuji

2SD1155
2SD1155

4.5. 2sd1159.pdf Size:111K _inchange_semiconductor

2SD1155
2SD1155
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1159 DESCRIPTION ·With TO-220 package APPLICATIONS ·TV horizontal deflection output, ·High-current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 4.5 A ICM Collector current-peak 10 A PC Collector power dissipation TC=25? 40 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1159 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=? 60 V V(BR)CBO Collector-base breakdown vol

4.6. 2sd1157.pdf Size:235K _inchange_semiconductor

2SD1155
2SD1155
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1157 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High DC Current Gain- : hFE= 250V(Min.) @IC= 0.5A ·Low Collector Saturation Voltage ·High Reliability APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid sate relay ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 4 A IBB Base Current-Continuous 1 A Collector Power Dissipation PC @ TC=25? 25 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 5.0 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power T

4.7. 2sd1154.pdf Size:104K _inchange_semiconductor

2SD1155
2SD1155
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1154 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for horizontal deflection output for B/W TV set. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A Collector Power Dissipation PC @TC=25? 50 W Tj Junction Temperature 150 ? Tstg Storage Temperature Range -65~150 ? isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1154 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 200 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA ; IC

4.8. 2sd1158.pdf Size:116K _inchange_semiconductor

2SD1155
2SD1155
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1158 DESCRIPTION ·With TO-220 package ·High speed switching ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Switching regulators ·DC-DC converters ·Solid state relay ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 8 A IB Base current 2 A PC Collector power dissipation TC=25? 40 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 1.25 ?/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1158

See also transistors datasheet: 2SD1148R , 2SD1149 , 2SD1150 , 2SD1151 , 2SD1152 , 2SD1153 , 2SD1153A , 2SD1154 , 2SC1740 , 2SD1156 , 2SD1157 , 2SD1158 , 2SD1159 , 2SD116 , 2SD1160 , 2SD1160O , 2SD1160Y .

Keywords

 2SD1155 Datasheet  2SD1155 Datenblatt  2SD1155 RoHS  2SD1155 Distributor
 2SD1155 Application Notes  2SD1155 Component  2SD1155 Circuit  2SD1155 Schematic
 2SD1155 Equivalent  2SD1155 Cross Reference  2SD1155 Data Sheet  2SD1155 Fiche Technique

 

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