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2SD1155 Transistor (IC) Datasheet. Cross Reference Search. 2SD1155 Equivalent

Type Designator: 2SD1155

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 300

Maximum collector-base voltage |Ucb|, V: 400

Maximum collector-emitter voltage |Uce|, V:

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 50

Maksimalna temperatura (Tj), ¬įC: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 400

Noise Figure, dB: -

Package of 2SD1155 transistor: SPECIAL

2SD1155 Transistor Equivalent Substitute - Cross-Reference Search

2SD1155 PDF:

4.1. 2sd1159.pdf Size:77K _sanyo

2SD1155
2SD1155

Ordering number:EN837E NPN Triple Diffused Planar Silicon Transistor 2SD1159 TV Horizontal Deflection Output, High-Current Switching Applications Features Package Dimensions ∑ Capable of efficient drive with small internal loss due unit:mm to excellent tf. 2010C [2SD1159] 10.2 4.5 3.6 5.1 1.3 1.2 1 : Base 0.8 0.4 2 : Collector 1 2 3 3 : Emitter JEDEC : TO-220AB 2.55 2.55

4.2. 2sd1153.pdf Size:83K _sanyo

2SD1155
2SD1155

Ordering number:828D PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors 2SB865/2SD1153 Drivers Applications Applications Package Dimensions ∑ Relay drivers, hammer drivers, lamp drivers, motor unit:mm drivers. 2006A [2SB865/2SD1153] Features ∑ High DC current gain (4000 or more). ∑ Large current capacity and wide ASO. ∑ Low saturation voltage. EIAJ : SC-51 B : Base ( ) : 2

4.3. 2sd1157.pdf Size:97K _fuji

2SD1155
2SD1155

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

4.4. 2sd1158.pdf Size:126K _fuji

2SD1155
2SD1155

4.5. 2sd1159.pdf Size:111K _inchange_semiconductor

2SD1155
2SD1155

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1159 DESCRIPTION ·With TO-220 package APPLICATIONS ·TV horizontal deflection output, ·High-current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-

4.6. 2sd1157.pdf Size:235K _inchange_semiconductor

2SD1155
2SD1155

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1157 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High DC Current Gain- : hFE= 250V(Min.) @IC= 0.5A ·Low Collector Saturation Voltage ·High Reliability APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid sate relay ·General purpose power amplifi

4.7. 2sd1154.pdf Size:104K _inchange_semiconductor

2SD1155
2SD1155

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1154 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for horizontal deflection output for B/W TV set. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emi

4.8. 2sd1158.pdf Size:116K _inchange_semiconductor

2SD1155
2SD1155

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1158 DESCRIPTION ·With TO-220 package ·High speed switching ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Switching regulators ·DC-DC converters ·Solid state relay ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mou

See also transistors datasheet: 2SD1148R , 2SD1149 , 2SD1150 , 2SD1151 , 2SD1152 , 2SD1153 , 2SD1153A , 2SD1154 , 2SC1740 , 2SD1156 , 2SD1157 , 2SD1158 , 2SD1159 , 2SD116 , 2SD1160 , 2SD1160O , 2SD1160Y .

Search Terms:

 2SD1155 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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