All Transistors Datasheet

 

2N2222 Transistor (IC) Datasheet. Cross Reference Search. 2N2222 Equivalent

Type Designator: 2N2222

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.5

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 30

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.8

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz: 250

Collector capacitance (Cc), pF: 8

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of 2N2222 transistor: TO18

2N2222 Transistor Equivalent Substitute - Cross-Reference Search

 

2N2222 PDF:

1.1. mtp2n2222a.pdf Size:238K _motorola

2N2222
2N2222

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by P2N2222A/D Amplifier Transistors NPN Silicon P2N2222A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector–Emitter Voltage VCEO 40 Vdc 3 Collector–Base Voltage VCBO 75 Vdc CASE 29–04, STYLE 17 Emitter–Base Voltage VEBO 6.0 Vdc TO–92 (TO–226AA) Collector Current — Continuous IC 600 mAdc

1.2. p2n2222a.pdf Size:238K _motorola

2N2222
2N2222

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by P2N2222A/D Amplifier Transistors NPN Silicon P2N2222A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector–Emitter Voltage VCEO 40 Vdc 3 Collector–Base Voltage VCBO 75 Vdc CASE 29–04, STYLE 17 Emitter–Base Voltage VEBO 6.0 Vdc TO–92 (TO–226AA) Collector Current — Continuous IC 600 mAdc

1.3. 2n2222_2n2222a_cnv_2.pdf Size:53K _philips

2N2222
2N2222

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2222; 2N2222A NPN switching transistors 1997 May 29 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistors 2N2222; 2N2222A FEATURES PINNING • High current (max. 800 mA) PIN DESCRIPTION • Low voltage (max. 40 V). 1 emitter 2 ba

1.4. 2n2218-2n2219-2n2221-2n2222.pdf Size:71K _st

2N2222
2N2222

2N2218-2N2219 2N2221-2N2222 HIGH-SPEED SWITCHES DESCRIPTION The 2N2218, 2N2219, 2N2221 and 2N2222 are sili- con planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature use- ful current gain over a wide range of col

1.5. 2n2219a_2n2222a.pdf Size:166K _st

2N2222
2N2222

2N2219A 2N2222A ® HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage cur

1.6. 2n2222a_2n2219a.pdf Size:168K _st

2N2222
2N2222

2N2219A 2N2222A ® HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage cur

1.7. 2n2221a_2n2222a.pdf Size:116K _central

2N2222
2N2222

DATA SHEET 2N2221A 2N2222A NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A, 2N2222A types are Silicon NPN Planar Epitaxial Transistors designed for small signal general purpose and switching applications. MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO

1.8. 2n2222_2n2222a(to-18).pdf Size:232K _mcc

2N2222
2N2222

MCC 2N2222 Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2N2222A Phone: (818) 701-4933 Fax: (818) 701-4939 Features • High current (max.800mA) • Low voltage (max.40V) NPN Switching • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates Transistors RoHS Compliant. See ordering information) Maximum Ratings Symbol Ra

1.9. p2n2222a-d.pdf Size:164K _onsemi

2N2222
2N2222

P2N2222A Amplifier Transistors NPN Silicon Features • These are Pb--Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS (TA =25°C unless otherwise noted) Characteristic Symbol Value Unit 2 BASE Collector--Emitter Voltage VCEO 40 Vdc Collector--Base Voltage VCBO 75 Vdc 3 Emitter--Base Voltage VEBO 6.0 Vdc EMITTER Collector Current -- Continuous IC 600 mAdc Total Device Dis

1.10. 2n2222aub.pdf Size:250K _optek

2N2222
2N2222

Product Bulletin JANTX, JANTXV, 2N2222AUB September 1996 Surface Mount NPN General Purpose Transistor Type JANTX, JANTXV, 2N2222AUB Feature Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 V •Ceramic surface mount package Collector-Emitter Voltage. . . . . . . . .

1.11. 2n2222aua.pdf Size:186K _optek

2N2222
2N2222

1.12. p2n2222_a.pdf Size:240K _cdil

2N2222
2N2222

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS P2N2222 P2N2222A EBC TO-92 Complementary Silicon Transistors For Switching And Linear Applications DC Amplifier & Driver For Industrial Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL 2222 2222A UNIT Collecto

1.13. 2n2222au.pdf Size:326K _first_silicon

2N2222
2N2222

SEMICONDUCTOR 2N2222AU TECHNICAL DATA General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC-323/SC-70 package which 3 is designed for low power surface mount applications. Features 1 2 compliance with RoHS requirements. • We declare that the material of product SC-70 / SOT– 323 ORDERING INFO

1.14. 2n2222ae.pdf Size:462K _first_silicon

2N2222
2N2222

SEMICONDUCTOR 2N2222AE TECHNICAL DATA General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier 3 applications. They are housed in the SC-89 package which is designed for low power surface mount applications. 1 Features 2 compliance with RoHS requirements. • We declare that the material of product SC-89 ORDERING INFORMATION COLLECTOR

1.15. 2n2222as.pdf Size:446K _first_silicon

2N2222
2N2222

SEMICONDUCTOR 2N2222AS TECHNICAL DATA General Purpose Transistor NPN Silicon 3 compliance with RoHS requirements. • We declare that the material of product 2 1 ORDERING INFORMATION † SOT–23 Device Maring Shipping 2N2222AS 1P 3000 / Tape & Reel COLLECTOR 3 1 MAXIMUM RATINGS (TA = 25°C) BASE Rating Symbol Max Unit 2 Collector-Emitter Voltage VCEO 40 Vdc EMITTER Col

See also transistors datasheet: 2N2220 , 2N2220A , 2N2221 , 2N2221A , 2N2221ACSM , 2N2221ADCSM , 2N2221CSM , 2N2221DCSM , 2N5088 , 2N2222A , 2N2222ACSM , 2N2222ACSM4 , 2N2222ADCSM , 2N2222AQCSM , 2N2222AQF , 2N2222AUB , 2N2222CSM .

Search Terms:

 2N2222 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


2N2222
  2N2222
  2N2222
  2N2222
 
2N2222
  2N2222
  2N2222
  2N2222
 

social 

LIST