All Transistors Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
2N2222
  2N2222
  2N2222
 
2N2222
  2N2222
  2N2222
 
2N2222
  2N2222
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU807F
BU807FI .. BUP22A
BUP22B .. BUV70
BUV70F .. BUX98P
BUX98PI .. CC328-25
CC328-40 .. CFD1264P
CFD1264Q .. CK14
CK14A .. CN8050
CN8050C .. CSA1048O
CSA1048Y .. CSC1398A
CSC1398P .. CSD545
CSD545D .. D150
D1666 .. D40D8
D40D9 .. D45VH2
D45VH3 .. DP0150ADJ
DP0150ALP4 .. DTA143E
DTA143ECA .. DTC144WE
DTC144WEA .. ECG100
ECG101 .. ECG395
ECG396 .. ESM2633
ESM2666 .. FCS9013G
FCS9013H .. FJX4006R
FJX4007R .. FMMT5855
FMMT5856 .. FTR129
FTR158 .. GC505
GC506 .. GES5308A
GES5368 .. GME9001
GME9002 .. GT328A
GT328B .. HA9531A
HA9532 .. HPA251R-2
HPA251R-3 .. IDC3281
IDC3298 .. JE9016F
JE9016G .. KN4A4P
KN4A4Z .. KRA756U
KRA757E .. KRC828E
KRC828F .. KSA954-O
KSA954-Y .. KSC2757-O
KSC2757-R .. KSD5011
KSD5012 .. KST4403
KST5086 .. KT3179A-9
KT3180A-9 .. KT6127D
KT6127E .. KT8143N
KT8143P .. KT880G
KT880V .. KTA711T
KTA711U .. KTD1510
KTD1530 .. MA9003
MA901 .. MJ10005
MJ10005P .. MJD3055T4
MJD31 .. MJE520
MJE520K .. MM558-02
MM559-01 .. MMBT5550
MMBT5550L .. MO870
MP10 .. MP4401
MP4403 .. MPS2713
MPS2714 .. MPSA70
MPSA75 .. MRF644
MRF646 .. NA02HY
NA11E .. NB012HU
NB012HV .. NB211Z
NB211ZG .. NKT0028
NKT102 .. NPS4889
NPS4890 .. NTE101
NTE102 .. OC74
OC74N .. PBSS4350Z
PBSS4420D .. PET3706
PET6001 .. PN5550R
PN5551 .. R8224
R8259 .. RN1441
RN1442 .. RN2610
RN2611 .. S130-191
S1309 .. SDM4014
SDM4015 .. SGSF564
SGSF565 .. SRA2207U
SRA2207UF .. STC403F
STC403L .. SXTA92
SXTA93 .. TA2053A
TA2090A .. TIP117
TIP117F .. TIPP111
TIPP112 .. TN3725
TN3742 .. TP5551R
TP5816 .. UMT3585
UMT3904 .. UN911F
UN911K .. ZT2369A
ZT24 .. ZTX3903
ZTX3904 .. ZXTP23140BFH
ZXTP25012EFH .. ZXTPS720MC
 
2N2222 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2N2222 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N2222

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.5

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 30

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.8

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz: 250

Collector capacitance (Cc), pF: 8

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of 2N2222 transistor: TO18

2N2222 Equivalent Transistors - Cross-Reference Search

2N2222 PDF doc:

1.1. mtp2n2222a.pdf Size:238K _motorola

2N2222
2N2222
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by P2N2222A/D Amplifier Transistors NPN Silicon P2N2222A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector–Emitter Voltage VCEO 40 Vdc 3 Collector–Base Voltage VCBO 75 Vdc CASE 29–04, STYLE 17 Emitter–Base Voltage VEBO 6.0 Vdc TO–92 (TO–226AA) Collector Current — Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)CEO 40 — Vdc (IC = 10 mAdc, IB = 0) Col

1.2. p2n2222a.pdf Size:238K _motorola

2N2222
2N2222
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by P2N2222A/D Amplifier Transistors NPN Silicon P2N2222A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector–Emitter Voltage VCEO 40 Vdc 3 Collector–Base Voltage VCBO 75 Vdc CASE 29–04, STYLE 17 Emitter–Base Voltage VEBO 6.0 Vdc TO–92 (TO–226AA) Collector Current — Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)CEO 40 — Vdc (IC = 10 mAdc, IB = 0) Col

1.3. 2n2222_2n2222a_cnv_2.pdf Size:53K _philips

2N2222
2N2222
DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2222; 2N2222A NPN switching transistors 1997 May 29 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistors 2N2222; 2N2222A FEATURES PINNING • High current (max. 800 mA) PIN DESCRIPTION • Low voltage (max. 40 V). 1 emitter 2 base APPLICATIONS 3 collector, connected to case • Linear amplification and switching. DESCRIPTION 3 handbook, halfpage 1 2 NPN switching transistor in a TO-18 metal package. 2 PNP complement: 2N2907A. 3 MAM264 1 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 2N2222 - 60 V 2N2222A - 75 V VCEO collector-emitter voltage open base 2N2222 - 30 V 2N2222A - 40 V IC collector current (DC) - 800 mA Ptot total power dissipation Tamb ? 25 °C - 500 mW hFE DC current gain IC = 10 m

1.4. 2n2218-2n2219-2n2221-2n2222.pdf Size:71K _st

2N2222
2N2222
2N2218-2N2219 2N2221-2N2222 HIGH-SPEED SWITCHES DESCRIPTION The 2N2218, 2N2219, 2N2221 and 2N2222 are sili- con planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature use- ful current gain over a wide range of collector cur- rent, low leakage currents and low saturation volt- ages. 2N2218/2N2219 approved to CECC 50002- TO-39 TO-18 100, 2N2221/2N2222 approved to CECC 50002-101 available on request. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-base Voltage (IE =0) 60 V VCEO Collector-emitter Voltage (IB = 0) 30 V VEBO Emitter-base Voltage (IC =0) 5 V IC Collector Current 0.8 A Pto t Total Power Dissipation at T ? 25 °C amb for 2N2218 and 2N2219 0.8 W for 2N2221 and 2N2222 0.5 W at Tcase ? 25 °C for 2N2218 and 2N2219 3 W for 2N2221 and

1.5. 2n2219a_2n2222a.pdf Size:166K _st

2N2222
2N2222
2N2219A 2N2222A ® HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Base Voltage (I = 0) 75 V CBO E V Collector-Emitter Voltage (I = 0) 40 V CEO B VEBO Emitter-Base Voltage (IC = 0) 6 V IC Collector Current 0.6 A ICM Collector Peak Current (tp < 5 ms) 0.8 A Ptot Total Dissipation at Tamb ? 25 oC 0.8 W for 2N2219A 0.5 W for 2N2222A at T ? 25 oC C 3 W for 2N2219A 1.8 W for 2N2222A o Tstg Storage Temperature -65 to 175 C o Tj Max. Operating Junction Temperature 175 C 1/7 February 2003 2N2219

1.6. 2n2222a_2n2219a.pdf Size:168K _st

2N2222
2N2222
2N2219A 2N2222A ® HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Base Voltage (I = 0) 75 V CBO E V Collector-Emitter Voltage (I = 0) 40 V CEO B VEBO Emitter-Base Voltage (IC = 0) 6 V IC Collector Current 0.6 A ICM Collector Peak Current (tp < 5 ms) 0.8 A Ptot Total Dissipation at Tamb ? 25 oC 0.8 W for 2N2219A 0.5 W for 2N2222A at T ? 25 oC C 3 W for 2N2219A 1.8 W for 2N2222A o Tstg Storage Temperature -65 to 175 C o Tj Max. Operating Junction Temperature 175 C 1/7 February 2003 2N2219

1.7. 2n2221a_2n2222a.pdf Size:116K _central

2N2222
2N2222
DATA SHEET 2N2221A 2N2222A NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A, 2N2222A types are Silicon NPN Planar Epitaxial Transistors designed for small signal general purpose and switching applications. MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current IC 800 mA Power Dissipation PD 400 mW Power Dissipation (TC=25°C) PD 1.2 W Operating and Storage Junction Temperature TJ,Tstg -65 to +200 °C Thermal Resistance ?JA 438 °C/W Thermal Resistance ?JC 146 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N2221A 2N2222A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICBO VCB=60V 10 10 nA ICBO VCB=60V, TA=150°C 10 10 µA IEBO VEB=3.0V 10 10 nA ICEV VCE=60V, VEB=3.0V 10 10 nA BVCBO IC=10µA 75 75 V BVCEO IC=10mA 40 40 V BVEBO IE=10µA 6.0 6.0 V VCE(SAT) IC=150mA, IB=15mA 0.3 0.

1.8. 2n2222_2n2222a(to-18).pdf Size:232K _mcc

2N2222
2N2222
MCC 2N2222 Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2N2222A Phone: (818) 701-4933 Fax: (818) 701-4939 Features • High current (max.800mA) • Low voltage (max.40V) NPN Switching • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates Transistors RoHS Compliant. See ordering information) Maximum Ratings Symbol Rating Rating Unit VCEO Collector-Emitter Voltage TO-18 2N2222 30 V 2N2222A 40 VCBO Collector-Base Voltage 2N2222 60 V 2N2222A 75 VEBO Emitter-Base Voltage 2N2222 5.0 V 2N2222A 6.0 IC Collector Current (DC) 800 mA ICM Peak Collector Current 800 mA IBM Peak Base Current 200 mA O TJ Operating Junction Temperature -55 to +150 C O TSTG Storage Temperature -55 to +150 C Thermal Characteristics Symbol Rating Max Unit Total power Dissipation Ptot TA 25 500 mW TC 25 1.2 W RJC Thermal Resistance, Junction to Case 146 K/W RJA Thermal Resistance, Junction to Ambient 350 K/W E

1.9. p2n2222a-d.pdf Size:164K _onsemi

2N2222
2N2222
P2N2222A Amplifier Transistors NPN Silicon Features • These are Pb--Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS (TA =25°C unless otherwise noted) Characteristic Symbol Value Unit 2 BASE Collector--Emitter Voltage VCEO 40 Vdc Collector--Base Voltage VCBO 75 Vdc 3 Emitter--Base Voltage VEBO 6.0 Vdc EMITTER Collector Current -- Continuous IC 600 mAdc Total Device Dissipation @ TA =25°C PD 625 mW Derate above 25°C 5.0 mW/°C TO--92 Total Device Dissipation @ TC =25°C PD 1.5 W CASE 29 Derate above 25°C 12 mW/°C STYLE 17 Operating and Storage Junction TJ, Tstg --55 to °C Temperature Range +150 1 1 2 2 3 THERMAL CHARACTERISTICS 3 STRAIGHT LEAD BENT LEAD Characteristic Symbol Max Unit BULK PACK TAPE & REEL AMMO PACK Thermal Resistance, Junction to Ambient R?JA 200 °C/W Thermal Resistance, Junction to Case R?JC 83.3 °C/W MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Funct

1.10. 2n2222aua.pdf Size:186K _optek

2N2222
2N2222

1.11. 2n2222aub.pdf Size:250K _optek

2N2222
2N2222
Product Bulletin JANTX, JANTXV, 2N2222AUB September 1996 Surface Mount NPN General Purpose Transistor Type JANTX, JANTXV, 2N2222AUB Feature Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 V •Ceramic surface mount package Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V •Miniature package to minimize circuit Emitter-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.0 board area Collector Current-Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800 mA •Hermetically sealed Operating Junction Temperature (T ). . . . . . . . . . . . . . . . . . . . . . . . -65o C to +200o C J •Qualification per MIL-S-19500/255 Storage Junction Temperature (T ) . . . . . . . . . . . . . . . . . . . . .

1.12. p2n2222_a.pdf Size:240K _cdil

2N2222
2N2222
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS P2N2222 P2N2222A EBC TO-92 Complementary Silicon Transistors For Switching And Linear Applications DC Amplifier & Driver For Industrial Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL 2222 2222A UNIT Collector -Emitter Voltage VCEO 30 40 V Collector -Base Voltage VCBO 60 75 V Emitter -Base Voltage VEBO 5.0 6.0 V Collector Current Continuous IC 600 mA Power Dissipation @Ta=25 degC PD 625 mW 5 Derate Above 25deg C mW/deg C @ Tc=25 degC PD 1.5 W 12 Derate Above 25deg C mW/deg C Operating And Storage Junction Tj, Tstg -55 to +150 deg C Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 83.3 deg C/W Junction to Ambient Rth(j-a) 200 deg C/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION 2222 2222A UNIT Collector -Emitter

See also transistors datasheet: 2N2220 , 2N2220A , 2N2221 , 2N2221A , 2N2221ACSM , 2N2221ADCSM , 2N2221CSM , 2N2221DCSM , 2N5088 , 2N2222A , 2N2222ACSM , 2N2222ACSM4 , 2N2222ADCSM , 2N2222AQCSM , 2N2222AQF , 2N2222AUB , 2N2222CSM .

Keywords

 2N2222 Datasheet  2N2222 Datenblatt  2N2222 RoHS  2N2222 Distributor
 2N2222 Application Notes  2N2222 Component  2N2222 Circuit  2N2222 Schematic
 2N2222 Equivalent  2N2222 Cross Reference  2N2222 Data Sheet  2N2222 Fiche Technique

(C) 2005 All Right reserved Bipolar | | MOSFET | | IGBT | | Manufacturer Sites | | SMD Code | | Packages | | Contact alltransistors[@]gmail.com